CN107093994B - Film bulk acoustic resonator and processing method thereof - Google Patents
Film bulk acoustic resonator and processing method thereof Download PDFInfo
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- CN107093994B CN107093994B CN201710185948.2A CN201710185948A CN107093994B CN 107093994 B CN107093994 B CN 107093994B CN 201710185948 A CN201710185948 A CN 201710185948A CN 107093994 B CN107093994 B CN 107093994B
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- 238000003672 processing method Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a film bulk acoustic resonator realized by adopting a bonding mode and a preparation method thereof. In the preparation method provided by the invention, the piezoelectric sandwich structure is integrally etched after being deposited layer by layer, so that the defect or damage of the deposited piezoelectric material layer is effectively avoided. Secondly, due to the adoption of a cavity bonding process which is etched in advance, the problems of incomplete release and adhesion of a sacrificial layer or device stress caused by back etching in the traditional processing method can be effectively avoided.
Description
Technical Field
The invention relates to a film bulk acoustic resonator, in particular to a film bulk acoustic resonator realized by adopting a bonding process and a processing method thereof.
Background
With the development of wireless communication applications, people have higher and higher requirements on data transmission speed. In the field of mobile communication, the first generation is analog technology, the second generation realizes digital voice communication, the third generation (3G) is characterized by multimedia communication, the fourth generation (4G) improves the communication rate to 1Gbps and reduces the time delay to 10ms, the fifth generation (5G) is a new generation mobile communication technology after 4G, although the technical specification and standard of 5G are not completely clear, the network transmission rate and the network capacity are greatly improved compared with 3G and 4G. If it is said that communication between people is mainly solved from 1G to 4G, 5G will solve communication between people and things, and between things and things, namely, interconnection of everything, outside people and people, and realize the vision of "information is free, everything is tentatively and" vision.
Corresponding to the data rate rise is a high utilization of spectrum resources and a complication of the communication protocol. Due to limited frequency spectrum, in order to meet the requirement of data rate, the frequency spectrum must be fully utilized; meanwhile, in order to meet the requirement of data rate, carrier aggregation technology is also used from 4G, so that one device can transmit data by using different carrier spectrums at the same time. On the other hand, in order to support a sufficient data transmission rate within a limited bandwidth, communication protocols are becoming more and more complex, and thus stringent requirements are placed on various performances of the radio frequency system.
In the rf front-end module, the rf filter plays a crucial role. It can filter out-of-band interference and noise to meet the signal-to-noise ratio requirements of radio frequency systems and communication protocols. As communication protocols become more complex, the requirements for the inside and outside of the frequency band become higher, making filter design more challenging. In addition, as the number of frequency bands that a mobile phone needs to support increases, the number of filters that need to be used in each type of mobile phone also increases.
At present, the most popular implementation modes of radio frequency filters are surface acoustic wave filters and filters based on thin film bulk acoustic resonator technology. Surface acoustic wave filters are well suited for use below 1.5GHz due to their limitations. However, current wireless communication protocols have long used frequency bands greater than 2.5GHz, when filters based on film bulk acoustic resonator technology must be used.
The structure and preparation mode of the film bulk acoustic wave resonator are various. In the prior structure and preparation method, piezoelectric films such as aluminum nitride, zinc oxide, PZT and the like are mainly used as piezoelectric materials, and the preparation of high-quality piezoelectric film materials is always the key and difficult point in the field. The traditional method for preparing the piezoelectric film is to deposit a bottom electrode material at first, then etch the bottom electrode material to form a required bottom electrode shape, and then deposit a piezoelectric layer on the basis. Since the deposition quality (such as crystal orientation, surface flatness, etc.) of the piezoelectric layer depends on the quality of the bottom electrode in large part, especially the defects of edge residue, burrs, etc. of the bottom electrode caused by etching will seriously affect the growth of the high-quality piezoelectric layer, thereby affecting the performance of the final film bulk acoustic resonator.
Disclosure of Invention
The invention aims to provide a film bulk acoustic resonator realized by adopting a bonding mode and a preparation method thereof aiming at the defects of the prior art. The top electrode, the piezoelectric material and the bottom electrode are sequentially deposited into a piezoelectric film stack structure, then the bottom electrode is bonded with the substrate with the cavity after being etched, and finally the top electrode metal is etched to form the required electrode shape. Specifically, the scheme of the invention is as follows:
a method for preparing a film bulk acoustic resonator is characterized by comprising the following steps:
preparing a piezoelectric sandwich stack structure on a substrate material, wherein the piezoelectric sandwich stack structure comprises a first electrode, a piezoelectric material and a second electrode, and the first electrode is positioned on the upper surface of the piezoelectric material;
patterning the first electrode;
depositing a first metal film on the surface of the piezoelectric material, and patterning to form a first metal material layer;
preparing a substrate with an air gap;
depositing a second metal film on the substrate, and patterning to form a second metal material layer;
bonding the first metal material layer and the second metal material layer to enable the substrate material with the piezoelectric sandwich stack structure to be integrated with the substrate with the air gap;
and removing the substrate material.
Further, the removing the substrate material comprises a lift-off step.
Further, the method comprises the step of depositing a thin film material layer for stripping on the substrate material.
Further, after bonding, the first electrode is in full contact with the substrate.
Further, the method also comprises the steps of patterning the piezoelectric material layer and leading out the first electrode.
Further, the method also comprises the step of forming interconnections on the surface of the piezoelectric material layer.
Further, the film material layer is a material which is easy to strip from the substrate material, and comprises silicon dioxide, silicon nitride and phosphorosilicate glass.
Further, the stripping step includes wet etching.
The invention also provides a film bulk acoustic resonator prepared by the preparation method.
The invention also provides a filter which comprises the film bulk acoustic resonator.
The technical scheme provided by the invention has the following advantages: firstly, the growth of the piezoelectric film depends on the electrode material and shape below the piezoelectric film, for example, a commonly used aluminum nitride piezoelectric film with a preferred C-axis generally grows better on a molybdenum electrode, a tungsten electrode and a platinum electrode, for example, the performance of the piezoelectric film growing on the edge of the electrode is often poor, so that the performance of the film bulk acoustic resonator and the filter is often greatly related to the electrode material and shape below the piezoelectric film. By adopting the scheme of the invention, the influence of rough electrode edges caused by a bottom electrode etching process on the growth of the piezoelectric material can be avoided, so that the high-quality piezoelectric film can be more effectively obtained; secondly, due to the adoption of a cavity bonding process which is etched in advance, the problems of incomplete release and adhesion of a sacrificial layer or device stress caused by back etching in the traditional processing method can be effectively avoided.
Drawings
FIG. 1 is a cross-sectional structural view of a film bulk acoustic resonator of the present invention;
fig. 2 is a flow chart of a manufacturing process of a film bulk acoustic resonator according to the present invention.
Detailed Description
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Example 1
Fig. 1 is a cross-sectional structural view of a thin film bulk acoustic resonator according to an embodiment of the present invention, where the thin film bulk acoustic resonator includes a substrate 700, where the substrate 700 is, for example, a silicon wafer; the substrate 700 includes an air gap 800 thereon; bonding layer 600(900), such as gold; a piezoelectric sandwich structure is arranged above the air gap 800, wherein 500 is a first electrode of the piezoelectric sandwich structure, and the material is molybdenum and the like; 400 is a piezoelectric layer of piezoelectric sandwich structure, the material is piezoelectric single crystal, such as piezoelectric quartz, lithium tantalate, lithium niobate or lithium tetraborate; 300 is a second electrode of a piezoelectric sandwich structure, and the material is molybdenum and the like; the interconnection metal 120 is used for leading out the first electrode of the piezoelectric sandwich structure to the surface of the piezoelectric sandwich structure 400 to form a welding spot or an interconnection point, and the material is gold or tungsten.
Example 2
Fig. 2 is a flow chart of a manufacturing process of a film bulk acoustic resonator according to an embodiment of the present invention, where the manufacturing process includes:
(a) a silicon wafer 100 polished on one side or both sides with the polishing surface facing upward is prepared, and standard cleaning is performed.
(b) A layer of thin film material 200 is deposited for subsequent stripping, which may be silicon dioxide, silicon nitride, phosphosilicate glass, or other material that is easily stripped from the silicon substrate.
(c) The second electrode 300, the piezoelectric material 400 and the first electrode 500 are sequentially deposited on the thin film material 200. Wherein the first electrode 500 and the second electrode 300 comprise molybdenum electrodes, and the piezoelectric material 400 comprises one or a combination of aluminum nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), and lithium tantalate (LiTaO 3).
(d) The first electrode 500 is patterned to form a pattern as shown in fig. 2 (c).
(e) A chromium-gold thin film with a certain thickness is deposited on the surface of the piezoelectric material 400, and is patterned by photolithography to form a eutectic bonding first metal material layer 600, as shown in fig. 2 (d). In the embodiment, the piezoelectric sandwich stack structure is formed by continuously depositing the electrode and the piezoelectric material, so that the influence of rough electrode edges caused by a bottom electrode etching process on the growth of the piezoelectric material can be avoided, and the high-quality piezoelectric film can be obtained more effectively.
(f) Preparing a single-side or double-side polished silicon wafer 700, patterning and etching the silicon wafer into a cavity structure 800, as shown in fig. 2 (e);
(g) depositing a chromium-gold film with a certain thickness on the surface of the silicon wafer 700, and forming a eutectic bonding second metal material layer 900 after photoetching and patterning, as shown in fig. 2 (f).
(h) The deposited piezoelectric and electrode material wafer 100 and the silicon wafer 700 are eutectic bonded, so that the eutectic bonded first metal material layer 600 and second metal material layer 900 are fused together to form 600 (900). After bonding, the wafer 100 and the wafer 700 are integrated by depositing piezoelectric and electrode materials. It should be noted that the bonded first electrode 500 of the film bulk acoustic resonator should be ensured to be in complete contact with the silicon wafer 700 without a gap therebetween. As shown in fig. 2(g) and 2 (h). The piezoelectric sandwich structure occupies a small area on the entire chip, while the first and second metal layers 600 and 900 occupy a large area.
(i) The wafer 100 in the integrated structure is peeled. The peeling step in this embodiment peels the wafer 100 from the integrated structure formed by bonding by wet etching the thin film material 200. As shown in fig. 2 (i).
(j) The stripped silicon wafer 700-based device is subjected to standard cleaning, and then the second electrode 300 is patterned to form a pattern as shown in fig. 2 (j).
(k) The piezoelectric material thin film 200 is patterned to open the first electrode 500 at a predetermined position, thereby forming a pattern as shown in fig. 2 (k).
(1) Finally, metal such as gold is deposited on the surface of the wafer, and the interconnection metal 120 is formed after photoetching and patterning, so that the first electrode of the film bulk acoustic resonator is led out to the surface of the piezoelectric material film 200 to form a welding point or an interconnection point, and the signal of the film bulk acoustic resonator is conveniently led out or is connected with other devices, as shown in fig. 2 (l).
In this embodiment, the fabrication of the piezoelectric sandwich structure and the fabrication of the substrate with the cavity can be performed simultaneously without strict requirements for sequential steps.
In the preparation method provided by the invention, the piezoelectric sandwich structure is integrally etched after being deposited layer by layer, so that the defects or damages of the deposited material layer are effectively avoided. Secondly, due to the adoption of a cavity bonding process which is etched in advance, the problems of incomplete release and adhesion of a sacrificial layer or device stress caused by back etching in the traditional processing method can be effectively avoided.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A method for preparing a film bulk acoustic resonator is characterized by comprising the following steps:
preparing a piezoelectric sandwich stack structure on a substrate material, wherein the piezoelectric sandwich stack structure comprises a second electrode, a piezoelectric material and a first electrode which are sequentially and continuously deposited on the substrate material, and the first electrode is positioned on the upper surface of the piezoelectric material;
patterning the first electrode;
depositing a first metal film on the surface of the piezoelectric material, and patterning to form a first metal material layer;
preparing a substrate with an air gap;
depositing a second metal film on the substrate, and patterning to form a second metal material layer;
bonding the first metal material layer and the second metal material layer to enable the substrate material with the piezoelectric sandwich stack structure to be integrated with the substrate with the air gap;
removing the substrate material;
patterning the second electrode;
patterning the piezoelectric material.
2. The method for manufacturing a thin film bulk acoustic resonator according to claim 1, characterized in that: the removing the substrate material comprises a lift-off step.
3. The method of manufacturing a thin film bulk acoustic resonator according to claim 1 or 2, characterized in that: comprising the step of depositing a layer of thin film material for lift-off on the substrate material.
4. The method for manufacturing a thin film bulk acoustic resonator according to claim 1, characterized in that: after bonding, the first electrode is in full contact with the substrate.
5. The method for manufacturing a thin film bulk acoustic resonator according to claim 1, characterized in that: the method also comprises the steps of patterning the piezoelectric material layer and leading out the first electrode.
6. The method for manufacturing a thin film bulk acoustic resonator according to claim 1, characterized in that: the method further comprises the step of forming interconnections on the surface of the piezoelectric material layer.
7. The method of manufacturing a thin film bulk acoustic resonator according to claim 3, characterized in that: the film material layer is made of a material which is easy to strip from the substrate material, and the film material layer is made of silicon dioxide, silicon nitride or phosphorosilicate glass.
8. The method for manufacturing a thin film bulk acoustic resonator according to claim 7, wherein: the stripping step includes wet etching.
9. A thin film bulk acoustic resonator produced by the production method according to any one of claims 1 to 8.
10. A filter comprising the thin film bulk acoustic resonator of claim 9.
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| CN109150135B (en) * | 2018-11-13 | 2024-05-31 | 杭州左蓝微电子技术有限公司 | Film bulk acoustic resonator based on bonding and processing method thereof |
| CN109831172B (en) * | 2018-12-20 | 2022-03-01 | 苏州敏芯微电子技术股份有限公司 | Method for preparing bulk acoustic wave resonator |
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| CN111010135A (en) * | 2019-10-26 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter, and electronic device |
| WO2021248503A1 (en) * | 2020-06-12 | 2021-12-16 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer, and information collection element |
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| CN111864053A (en) * | 2020-07-24 | 2020-10-30 | 深圳市汇顶科技股份有限公司 | Ultrasonic sensor manufacturing method, ultrasonic sensor and electronic device |
| CN112803910A (en) * | 2020-12-29 | 2021-05-14 | 杭州电子科技大学 | Preparation method of single crystal film bulk acoustic resonator |
| CN112929003A (en) * | 2021-01-25 | 2021-06-08 | 杭州电子科技大学 | Method for preparing film bulk acoustic resonator by adopting metal bonding process |
| CN114337581A (en) * | 2022-03-17 | 2022-04-12 | 常州承芯半导体有限公司 | Method for forming bulk acoustic wave resonator |
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| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN105811914A (en) * | 2016-02-25 | 2016-07-27 | 锐迪科微电子（上海）有限公司 | Bulk acoustic wave device, integrated structure and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN105811914A (en) * | 2016-02-25 | 2016-07-27 | 锐迪科微电子（上海）有限公司 | Bulk acoustic wave device, integrated structure and manufacturing method |
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