CN107093994A - FBAR and its processing method - Google Patents
FBAR and its processing method Download PDFInfo
- Publication number
- CN107093994A CN107093994A CN201710185948.2A CN201710185948A CN107093994A CN 107093994 A CN107093994 A CN 107093994A CN 201710185948 A CN201710185948 A CN 201710185948A CN 107093994 A CN107093994 A CN 107093994A
- Authority
- CN
- China
- Prior art keywords
- preparation
- electrode
- fbar
- piezoelectric
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000007769 metal material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000002305 electric material Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000012528 membrane Substances 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000004891 communication Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The present invention proposes FBAR that a kind of use bonding pattern is realized and preparation method thereof, by the way that top electrode, piezoelectric, hearth electrode are sequentially depositing as piezoelectric membrane stacked structure, then it is bonded after hearth electrode is etched with the substrate with cavity, finally top electrode metal is performed etching again to form required electrode shape.It is overall again after piezoelectricity sandwich structure layer by layer deposition to etch in the preparation method that the present invention is provided, it effectively prevent defect or the infringement of depositing piezoelectric material layer.Secondly as using the cavity bonding technology etched in advance, the sacrifice layer that can effectively avoid traditional diamond-making technique from causing discharges the stresses of parts problem caused by not thorough and adhesion problems, or back etching.
Description
Technical field
The present invention relates to a kind of FBAR, the thin-film body that more particularly to a kind of use bonding technology is realized
Acoustic resonator and its processing method.
Background technology
With the development of wireless communication applications, requirement more and more higher of the people for data transmission bauds.In mobile communication
Field, the first generation is analogue technique, and the second generation realizes digitized voice communications, and the third generation (3G) is using multimedia communication as spy
Levy, traffic rate is brought up to 1Gbps, time delay and is reduced to 10ms by forth generation (4G), and the 5th generation (5G) was a new generation after 4G
Mobile communication technology, although 5G technical specification is with standard also without completely clearly, but compared with 3G, 4G, and its network transmission is fast
Rate and network capacity will be substantially improved.If what is mainly solved from 1G to 4G is interpersonal communication, 5G will solve people
Interconnected with people and thing outside people, the communication between thing and thing, i.e. all things on earth, realize the hope of " information follow one's inclinations to, all things on earth tentacle and "
Scape.
Corresponding with data transfer rate rising is high usage and the complication of communications protocol of frequency spectrum resource.Due to frequency spectrum
It is limited, in order to meet the demand of data transfer rate, it is necessary to make full use of frequency spectrum；While the demand in order to meet data transfer rate, since 4G
Also use carrier aggregation technology so that an equipment can utilize different carrier spectrum transmission data simultaneously.On the other hand,
In order to support enough data transmission rates in limited bandwidth, communication protocol becomes to become increasingly complex, therefore to radio system
Various performances it is also proposed strict demand.
In RF front-end module, radio-frequency filter plays vital effect.It can be by out-of-band interference and noise
Filter out to meet the demand of radio system and communications protocol for signal to noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement also more and more higher so that the design of wave filter increasingly has challenge.In addition, as mobile phone needs the frequency band number of support
Mesh constantly rises, and needs the wave filter quantity used also constantly rising in every Mobile phone.
Current radio-frequency filter most main flow is achieved in that SAW filter and based on FBAR
The wave filter of technology.SAW filter is used below proper in 1.5GHz due to the limitation of its own.However,
Current home control network communication protocol already using the frequency range more than 2.5GHz, at this moment must be used based on film bulk acoustic resonator
The wave filter of device technology.
The structure and preparation method of FBAR have had a lot.In conventional structure and preparation method,
It is main to use the piezoelectric membranes such as aluminium nitride, zinc oxide, PZT as piezoelectric, and prepare high-quality piezoelectric film material one
It is directly the emphasis and difficult point in the field.The method that tradition prepares piezoelectric membrane is depositions of bottom electrode material first, and then it is carved
The hearth electrode shape needed for formation is lost, on this basis redeposited piezoelectric layer.Due to piezoelectric layer deposition quality (such as crystal orientation,
Surface smoothness etc.) greatly depend on hearth electrode quality, especially etch caused by hearth electrode margin residual, hair
The defects such as thorn will have a strong impact on high-quality piezoelectric layer growth, so as to influence the performance of final FBAR.
The content of the invention
The purpose of the present invention is the defect for prior art, it is proposed that the thin-film body sound that a kind of use bonding pattern is realized
Wave resonator and preparation method thereof.By the way that top electrode, piezoelectric, hearth electrode are sequentially depositing as piezoelectric membrane stacked structure,
Then it is bonded after hearth electrode is etched with the substrate with cavity, finally top electrode metal is performed etching again to form required electricity
Pole shape.Specifically, the solution of the present invention is as follows：
A kind of preparation method of FBAR, it is characterised in that comprise the following steps：
Piezoelectricity sandwich stacked structure is prepared on backing material, the piezoelectricity sandwich stacked structure includes the first electricity
Pole, piezoelectric, second electrode, the first electrode are located at the piezoelectric upper surface；
The graphical first electrode；
The first metallic film is deposited in the piezoelectric material surface, and graphically forms the first metal material layer；
Prepare the substrate with air-gap；
The second metallic film is deposited on the substrate, and graphically forms the second metal material layer；
First metal material layer and second metal material layer are bonded so that preparation has piezoelectricity sandwich
The backing material of stacked structure forms entirety with the substrate with air-gap；
Remove the backing material.
Further, the removal backing material includes strip step.
Further, it is included in the step of film material plies for stripping are deposited on the backing material.
Further, after bonding, the first electrode is completely attached to the substrate.
Further, in addition to the graphical piezoelectric material layer and the step of draw the first electrode.
Further, the step of being additionally included in the piezoelectric layer surface formation interconnection.
Further, the film material plies for easily with the backing material peel off material, including silica, nitridation
Silicon, phosphorosilicate glass.
Further, the strip step includes wet etching.
The present invention also proposes a kind of FBAR, as prepared by the preparation method of the present invention.
The present invention also proposes a kind of wave filter, including FBAR.
Technical scheme proposed by the invention has following advantage：First, the growth of usual piezoelectric membrane is depended on
Electrode material below and shape, such as the aluminum nitride piezoelectric film of conventional C axles preferentially it is general molybdenum electrode, tungsten electrode and
Grow relatively good on platinum electrode, such as the piezoelectric membrane performance grown in electrode edge is often poor, therefore film bulk acoustic
The performance of resonator and wave filter often has much relations with the electrode material and shape below piezoelectric membrane.Using the present invention's
Scheme, due to being avoided that the coarse influence grown to piezoelectric of electrode edge that hearth electrode etching technics is caused, so as to more
Effectively obtain high-quality piezoelectric membrane；Secondly as using the cavity bonding technology etched in advance, can effectively avoid
The sacrifice layer release that traditional diamond-making technique is caused is not asked thoroughly with the stresses of parts caused by adhesion problems, or back etching
Topic.
Brief description of the drawings
Fig. 1 is a kind of FBAR sectional structure chart of the invention；
Fig. 2 is a kind of preparation technology flow chart of FBAR of the present invention.
Embodiment
Below by drawings and examples, technical scheme is described in further detail.
Embodiment 1
Fig. 1 is a kind of sectional structure chart of FBAR of the embodiment of the present invention, the film bulk acoustic resonator
It is, for example, silicon chip that device, which includes substrate 700, substrate 700,；Include air-gap 800 on substrate 700；Bonded layer 600 (900), bonded layer
For example, gold etc.；Include piezoelectricity sandwich structure in the top of air-gap 800, wherein 500 be the first electricity of piezoelectricity sandwich structure
Pole, material is molybdenum etc.；400 be piezoelectricity sandwich structure piezoelectric layer, material is piezoelectric monocrystal, such as piezoelectric quartz, lithium tantalate,
Lithium niobate or lithium tetraborate etc.；300 be the second electrode of piezoelectricity sandwich structure, and material is molybdenum etc.；Metal 120 is interconnected by piezoelectricity
The first electrode of sandwich structure is drawn out to 400 surfaces and forms solder joint or interconnection point, and material is gold or tungsten etc..
Embodiment 2
Fig. 2 is a kind of preparation technology flow chart of FBAR of the embodiment of the present invention, the preparation flow bag
Include：
(a) prepare the silicon chip 100 of single or double polishing, wherein polishing upwardly, carry out standard cleaning.
(b) one layer of thin-film material 200 for being subsequently used for peeling off is deposited, the material can be silica, silicon nitride, phosphorus silicon
The material that sour glass etc. is easily peeled off with silicon substrate.
(c) second electrode 300, piezoelectric 400 and first electrode 500 are sequentially depositing on thin-film material 200.Its
In, first electrode 500 and second electrode 300 include molybdenum electrode, piezoelectric 400 include aluminium nitride (AlN), zinc oxide (ZnO),
One of lithium niobate (LiNbO3), lithium tantalate (LiTaO3) or combination.
(d) first electrode 500 is patterned, forms the figure as shown in Fig. 2 (c).
(e) certain thickness chromium gold thin film is deposited on the surface of piezoelectric 400, eutectic bonding is formed after photolithography patterning
The first metal material layer 600, such as shown in Fig. 2 (d).In the present embodiment by the way of successive sedimentation electrode, piezoelectric shape
Into piezoelectricity sandwich stacked structure, the coarse shadow grown to piezoelectric of electrode edge that hearth electrode etching technics is caused is avoided that
Ring, so as to more effectively obtain high-quality piezoelectric membrane.
(f) prepare the silicon chip 700 of single or double polishing, it is patterned and cavity structure 800 is etched into, such as scheme
Shown in 2 (e)；
(g) certain thickness chromium gold thin film is deposited on the foregoing surface of silicon chip 700, eutectic bonding is formed after photolithography patterning
The second metal material layer 900, such as shown in Fig. 2 (f).
(h) preceding deposition piezoelectricity and electrode material wafer 100 and silicon chip 700 are subjected to eutectic bonding so that foregoing common
The first metal material layer 600 and the second metal material layer 900 of molten bonding combine together, form 600 (900).After being so bonded,
Depositing piezoelectric and electrode material wafer 100 and silicon chip 700 one entirety of formation.It should be noted that the thin-film body after bonding
Acoustic resonator first electrode 500 should ensure that to be completely attached to silicon chip 700, middle very close to each other.Such as Fig. 2 (g), Fig. 2 (h) institutes
Show.On whole chip, the area that piezoelectricity sandwich structure is occupied is smaller, and the first metal layer 600 and second metal layer 900 are accounted for
According to larger area.
(i) wafer 100 being previously formed in integrative-structure is peeled off.Strip step in the present embodiment passes through wet
Method corrodes thin-film material 200, so that wafer 100 be peeled off from the integrative-structure bonded together to form.As shown in Fig. 2 (i).
(j) device based on silicon chip 700 after stripping is subjected to standard cleaning, figure then is carried out to second electrode 300
Change, form the figure as shown in Fig. 2 (j).
(k) piezoelectric material film 200 is patterned, exposes first electrode 500 in pre-set position opening,
Form the figure as shown in Fig. 2 (k).
(l) the last surface deposited metal in foregoing disk, such as gold, form interconnection metal 120 after photolithography patterning, its
Purpose leads to the first electrode of FBAR on the surface of piezoelectric material film 200, forms solder joint or interconnection point,
Facilitate the signal of FBAR draw or with other device interconnection, shown in such as Fig. 2 (1).
In the present embodiment, preparing piezoelectricity sandwich structure can be while carries out, not with preparing the substrate with cavity
Strict priority step requirement.
It is overall again after piezoelectricity sandwich structure layer by layer deposition to etch in the preparation method that the present invention is provided, it is prevented effectively from
The defect of deposition materials layer or infringement.Secondly as using the cavity bonding technology etched in advance, can effectively avoid
The sacrifice layer release that traditional diamond-making technique is caused is not asked thoroughly with the stresses of parts caused by adhesion problems, or back etching
Topic.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
The present invention is described in detail according to preferred embodiment, it will be understood by those within the art that, can be to the present invention
Technical scheme modify or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of preparation method of FBAR, it is characterised in that comprise the following steps：
Piezoelectricity sandwich stacked structure is prepared on backing material, the piezoelectricity sandwich stacked structure includes first electrode, pressure
Electric material, second electrode, the first electrode are located at the piezoelectric upper surface；
The graphical first electrode；
The first metallic film is deposited in the piezoelectric material surface, and graphically forms the first metal material layer；
Prepare the substrate with air-gap；
The second metallic film is deposited on the substrate, and graphically forms the second metal material layer；
First metal material layer and second metal material layer are bonded so that preparation has piezoelectricity sandwich stacking
The backing material of structure forms entirety with the substrate with air-gap；
Remove the backing material.
2. the preparation method of FBAR according to claim 1, it is characterised in that：It is described to remove the lining
Bottom material includes strip step.
3. the preparation method of FBAR according to claim 1 or 2, it is characterised in that：It is included in described
The step of film material plies for stripping are deposited on backing material.
4. the preparation method of FBAR according to claim 1, it is characterised in that：After bonding, described
One electrode is completely attached to the substrate.
5. the preparation method of FBAR according to claim 1, it is characterised in that：Also include graphical institute
The step of stating piezoelectric material layer and draw the first electrode.
6. the preparation method of FBAR according to claim 1, it is characterised in that：It is additionally included in the pressure
The step of material layer surface forms interconnection.
7. the preparation method of FBAR according to claim 3, it is characterised in that：The film material plies
For the easy material peeled off with the backing material, including silica, silicon nitride, phosphorosilicate glass.
8. the preparation method of FBAR according to claim 7, it is characterised in that：The strip step bag
Include wet etching.
9. a kind of FBAR, as prepared by the preparation method described in claim any one of 1-8.
10. a kind of wave filter, including the FBAR described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710185948.2A CN107093994B (en) | 2017-03-24 | 2017-03-24 | Film bulk acoustic resonator and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710185948.2A CN107093994B (en) | 2017-03-24 | 2017-03-24 | Film bulk acoustic resonator and processing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107093994A true CN107093994A (en) | 2017-08-25 |
| CN107093994B CN107093994B (en) | 2020-08-11 |
Family
ID=59649110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710185948.2A Active CN107093994B (en) | 2017-03-24 | 2017-03-24 | Film bulk acoustic resonator and processing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107093994B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107666297A (en) * | 2017-11-17 | 2018-02-06 | 杭州左蓝微电子技术有限公司 | FBAR and its manufacture method with hydrophobic anti-adhesion structure |
| CN109150135A (en) * | 2018-11-13 | 2019-01-04 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator and its processing method based on bonding |
| CN109802648A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of single-crystal piezoelectric film bulk acoustic wave resonator and production method |
| CN109831172A (en) * | 2018-12-20 | 2019-05-31 | 苏州敏芯微电子技术股份有限公司 | A kind of preparation method of bulk acoustic wave resonator |
| CN110166013A (en) * | 2019-06-20 | 2019-08-23 | 杭州左蓝微电子技术有限公司 | A kind of acoustic wave device and preparation method thereof, temprature control method |
| CN110365306A (en) * | 2019-08-30 | 2019-10-22 | 迈感微电子(上海)有限公司 | Thin film bulk acoustic wave resonator, filter and thin film bulk acoustic wave resonator preparation method |
| CN111010135A (en) * | 2019-10-26 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter, and electronic device |
| CN111446360A (en) * | 2020-06-12 | 2020-07-24 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer and information acquisition element |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| CN111864053A (en) * | 2020-07-24 | 2020-10-30 | 深圳市汇顶科技股份有限公司 | Ultrasonic sensor manufacturing method, ultrasonic sensor and electronic device |
| CN111880124A (en) * | 2020-07-10 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Preparation method of high-frequency adjustable magnetic field detector and magnetic field detector |
| CN112803910A (en) * | 2020-12-29 | 2021-05-14 | 杭州电子科技大学 | Preparation method of single crystal film bulk acoustic resonator |
| CN112929003A (en) * | 2021-01-25 | 2021-06-08 | 杭州电子科技大学 | Method for preparing film bulk acoustic resonator by adopting metal bonding process |
| WO2021248503A1 (en) * | 2020-06-12 | 2021-12-16 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer, and information collection element |
| CN114337581A (en) * | 2022-03-17 | 2022-04-12 | 常州承芯半导体有限公司 | Method for forming bulk acoustic wave resonator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN105811914A (en) * | 2016-02-25 | 2016-07-27 | 锐迪科微电子（上海）有限公司 | Bulk acoustic wave device, integrated structure and manufacturing method |
-
2017
- 2017-03-24 CN CN201710185948.2A patent/CN107093994B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN105811914A (en) * | 2016-02-25 | 2016-07-27 | 锐迪科微电子（上海）有限公司 | Bulk acoustic wave device, integrated structure and manufacturing method |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107666297A (en) * | 2017-11-17 | 2018-02-06 | 杭州左蓝微电子技术有限公司 | FBAR and its manufacture method with hydrophobic anti-adhesion structure |
| CN107666297B (en) * | 2017-11-17 | 2024-02-09 | 杭州左蓝微电子技术有限公司 | Film bulk acoustic resonator with hydrophobic anti-adhesion structure and manufacturing method thereof |
| CN109150135A (en) * | 2018-11-13 | 2019-01-04 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator and its processing method based on bonding |
| CN109831172A (en) * | 2018-12-20 | 2019-05-31 | 苏州敏芯微电子技术股份有限公司 | A kind of preparation method of bulk acoustic wave resonator |
| WO2020125308A1 (en) * | 2018-12-20 | 2020-06-25 | 苏州敏芯微电子技术股份有限公司 | Bulk acoustic resonator and preparation method therefor |
| CN109831172B (en) * | 2018-12-20 | 2022-03-01 | 苏州敏芯微电子技术股份有限公司 | Method for preparing bulk acoustic wave resonator |
| CN109802648A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of single-crystal piezoelectric film bulk acoustic wave resonator and production method |
| CN109802648B (en) * | 2018-12-26 | 2023-02-17 | 天津大学 | Single crystal piezoelectric film bulk acoustic resonator and manufacturing method thereof |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| CN110166013A (en) * | 2019-06-20 | 2019-08-23 | 杭州左蓝微电子技术有限公司 | A kind of acoustic wave device and preparation method thereof, temprature control method |
| CN110365306A (en) * | 2019-08-30 | 2019-10-22 | 迈感微电子(上海)有限公司 | Thin film bulk acoustic wave resonator, filter and thin film bulk acoustic wave resonator preparation method |
| CN111010135A (en) * | 2019-10-26 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter, and electronic device |
| WO2021248503A1 (en) * | 2020-06-12 | 2021-12-16 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer, and information collection element |
| CN111446360A (en) * | 2020-06-12 | 2020-07-24 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer and information acquisition element |
| CN111880124B (en) * | 2020-07-10 | 2021-11-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method of high-frequency adjustable magnetic field detector |
| CN111880124A (en) * | 2020-07-10 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Preparation method of high-frequency adjustable magnetic field detector and magnetic field detector |
| CN111864053A (en) * | 2020-07-24 | 2020-10-30 | 深圳市汇顶科技股份有限公司 | Ultrasonic sensor manufacturing method, ultrasonic sensor and electronic device |
| CN112803910A (en) * | 2020-12-29 | 2021-05-14 | 杭州电子科技大学 | Preparation method of single crystal film bulk acoustic resonator |
| CN112929003A (en) * | 2021-01-25 | 2021-06-08 | 杭州电子科技大学 | Method for preparing film bulk acoustic resonator by adopting metal bonding process |
| CN114337581A (en) * | 2022-03-17 | 2022-04-12 | 常州承芯半导体有限公司 | Method for forming bulk acoustic wave resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107093994B (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107093994A (en) | FBAR and its processing method | |
| CN109217841B (en) | Film bulk acoustic wave combined resonator based on acoustic surface wave and cavity | |
| CN106788306A (en) | A kind of FBAR and preparation method thereof | |
| CN107493086A (en) | Temperature-compensating SAW resonator and preparation method thereof | |
| CN108900173B (en) | Method for preparing film bulk acoustic resonator by taking silicon as sacrificial layer | |
| CN109150135A (en) | Thin film bulk acoustic wave resonator and its processing method based on bonding | |
| CN207460113U (en) | The thin film bulk acoustic wave resonator combined based on solid-state and cavity | |
| CN109245742A (en) | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic | |
| CN107196618A (en) | FBAR and preparation method thereof | |
| CN106961258A (en) | A kind of cavity type SAW resonator and its processing method | |
| CN108539006A (en) | A kind of temperature-compensating SAW filter and preparation method thereof | |
| JP7259005B2 (en) | Thin-film bulk acoustic wave resonator and manufacturing method thereof | |
| CN107222181A (en) | FBAR based on SOI Substrate and preparation method thereof | |
| CN107171654A (en) | The FBAR and processing method combined based on solid-state and cavity | |
| CN206673927U (en) | FBAR and wave filter | |
| US11804819B2 (en) | Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material | |
| CN105703733A (en) | Method for preparing solid assembled film bulk acoustic wave resonator | |
| CN208924202U (en) | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic | |
| JP2007221665A (en) | Thin film piezoelectric resonator and manufacturing method thereof, and filter employing the same | |
| CN111682101B (en) | Manufacturing method of flexible FBAR filter | |
| CN208768044U (en) | Thin film bulk acoustic wave resonator based on bonding | |
| WO2020132997A1 (en) | Single crystal piezoelectric thin film bulk acoustic wave resonator and forming method therefor | |
| CN108880500A (en) | The production method and radio-frequency filter of radio-frequency filter | |
| CN113285014A (en) | Single crystal doped film, piezoelectric film for acoustic wave resonator and preparation method thereof | |
| CN206658185U (en) | A kind of FBAR and wave filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Thin film bulk acoustic resonator and its fabrication method Effective date of registration: 20201229 Granted publication date: 20200811 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: HANGZHOU SAPPLAND MICROELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2020330001332 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220111 Granted publication date: 20200811 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: HANGZHOU SAPPLAND MICROELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2020330001332 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Thin film bulk acoustic resonator and its processing method Effective date of registration: 20220112 Granted publication date: 20200811 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: HANGZHOU SAPPLAND MICROELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2022330000067 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230130 Granted publication date: 20200811 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: HANGZHOU SAPPLAND MICROELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2022330000067 |