CN105703733A - Method for preparing solid assembled film bulk acoustic wave resonator - Google Patents
Method for preparing solid assembled film bulk acoustic wave resonator Download PDFInfo
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- CN105703733A CN105703733A CN201610028453.4A CN201610028453A CN105703733A CN 105703733 A CN105703733 A CN 105703733A CN 201610028453 A CN201610028453 A CN 201610028453A CN 105703733 A CN105703733 A CN 105703733A
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- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000007787 solid Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000002360 preparation method Methods 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 230000005496 eutectics Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920000297 Rayon Polymers 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 239000013078 crystal Substances 0.000 description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention discloses a method for preparing a solid assembled film bulk acoustic wave resonator. The method comprises steps of: manufacturing a film structural layer of the bulk acoustic wave resonator on a preparing substrate; fixing the preparing substrate and the film structural layer manufactured thereon to a support substrate by a side of the film structural layer; removing the preparing substrate and depositing a top electrode on the film structural layer and performing etching; and finally forming a structure in which the support substrate, a Bragg reflection layer, a bottom electrode, a piezoelectric film, and a top electrode are successively laminated. The method for preparing the solid assembled film bulk acoustic wave resonator overcomes a restriction that a conventional preparation process cannot prepare high-quality monocrystal piezoelectric film material, and enable a better performance of the resonator.
Description
Technical field
The preparation method that the present invention relates to a kind of solid-state assembly type FBAR。
Background technology
In wireless telecommunications, radio-frequency filter is as the intermediary filtering set specific frequency signal, for reducing the signal disturbing of different frequency range, realizes the functions such as image cancellation, parasitic filtering and Channel assignment in wireless transceiver。Along with the growth of the deployment of 4GLTE network and market, the design of radio-frequency front-end develops towards miniaturization, low-power consumption and integrated direction, and market is also more and more higher to the requirement of filtering performance。Due to FBAR (FilmBulkAcousticResonator, it is called for short " FBAR ", also referred to as " bulk acoustic wave ", BulkAcousticWave, it is called for short " BAW ",) have that size is little, operating frequency is high, low in energy consumption, quality factor (Q-value) output frequency signal high, direct and the feature such as CMOS technology is compatible, the device having become as radio-frequency communication field at present important is widely used。
FBAR is the sandwich structure of electrode-piezoelectric membrane-electrode, its operation principle is dependent on the bulk acoustic wave that rf signal encourages and produces vibration in piezoelectrics and realize the resonance of FBAR, thus deriving three kinds of primary structures: cavity type, body silicon etching type and solid-state assembly type (SMR)。Solid-state assembly type FBAR is as it is shown in figure 1, it is low, acoustic impedance rete, the i.e. Bragg reflecting layer by grown some quarter-wave thickness on a silicon substrate, and what high low acoustic impedance film adopted is the mode of alternately superposition。Substantial amounts of sound wave can reflect on the interface of high low acoustic impedance film, and echo is because the thickness of high low acoustic impedance film is 1/4th of wave length of sound and produce Phase Stacking, can realize the total reflection effect being similar to after multiple reflections superposition。The number of plies more multiple reflection coefficient is more many, and the device quality factor (Q-value) prepared is also more high。In general, higher Q-value to be reached and need 5-7 layer reflecting layer。Adopt highly-resistant material tungsten (W) and low resistivity materials SiO under normal circumstances2Or Mo is as Bragg reflecting layer, this different materials is all standard CMOS process common used material, has significantly high integrated level。
Relative to the sharpest edges of other two kinds of structures, solid-state assembly type FBAR is in that the mechanical strength of its structure, firmness are good。But, the preparation technology of current solid-state version FBAR is sequentially prepared Bragg reflecting layer, hearth electrode, piezoelectric membrane (being generally AlN thin film), top electrode on a silicon substrate。The C axis oriented of piezoelectric membrane directly determines the quality of FBAR performance, and at present preparation technology from bottom to top cannot prepare the polycrystalline even single-crystal piezoelectric film of high C axle preferrel orientation, therefore, the performance of current solid-state assembly type FBAR also improves a lot space。
Summary of the invention
Based on this, it is an object of the invention to overcome the defect of prior art, the solid-state assembly type FBAR preparation method of a kind of based single crystal piezoelectric membrane is provided, adopt this preparation method, preparation process can realize the preparation of single-crystal piezoelectric film, improve the piezoelectric effect of piezoelectric membrane, thus improving the performance of FBAR device。
For achieving the above object, the present invention takes techniques below scheme:
Solid-state assembly type FBAR, it includes top electrode, piezoelectric film, hearth electrode, Bragg reflecting layer, support substrate。The piezoelectric vibration heap sandwich structure of top electrode, piezoelectric film and hearth electrode composition, piezoelectric vibration piles up on Bragg reflecting layer, and Bragg reflecting layer is supporting substrate。
The concrete preparation method of solid-state assembly type FBAR is as follows:
Successively at the piezoelectric film preparing substrate Epitaxial growth monocrystalline, at piezoelectric film surface depositions of bottom electrode, at the Bragg reflecting layer that hearth electrode surface deposition is alternately made up of more than 2 groups acoustic impedance retes and low acoustic impedance rete, stand-by；
By viscose glue bonding, eutectic bonding, metal, the mode of diffusion interlinked, anode linkage or melted bonding, is fixed on preparing the one side of Bragg reflecting layer on substrate on support substrate；
Substrate will be prepared remove, and peel off the piezoelectric film superficial growth top electrode preparing substrate, and be obtained top electrode figure and piezoelectric film figure by the mode of photoetching, etching；
Form the structure stacked gradually as supporting substrate, Bragg reflecting layer, hearth electrode, piezoelectric film and top electrode。
The effect of the present invention:
The solid-state assembly type FBAR preparation method that the present invention proposes, compared with existing preparation method, substantially increases the crystal mass of piezoelectric film。Existing solid-state assembly type FBAR preparation method is deposition C axle preferrel orientation polycrystalline piezoelectric film on Bragg reflecting layer, the preparation method that the present invention proposes then is preparing direct epitaxial growth high quality single crystal piezoelectric film on substrate, improve quality factor and the effective electro-mechanical couple factor of resonator by improving the crystal mass of piezoelectric film, thus improve with this resonator be elementary cell wave filter, duplexer, the related device such as sensor performance。
Accompanying drawing explanation
Fig. 1 is solid-state assembly type FBAR profile in prior art。
Fig. 2 is the sectional view depositing oriented single crystal aln layer in embodiment 1 in preparation substrate silicon。
Fig. 3 sputters sectional view after hearth electrode on aln layer in embodiment 1。
Fig. 4 is the sectional view after deposited Bragg reflecting layer in embodiment 1 on hearth electrode。
Fig. 5 supports the sectional view after substrate is bonded with membrane structure layer in embodiment 1。
Fig. 6 will prepare the sectional view after substrate is removed in embodiment 1。
Fig. 7 is the solid-state assembly type FBAR sectional view finally given after having etched piezoelectric film and top electrode in embodiment 1。
Wherein: 1. support substrate；2. Bragg reflecting layer；3. hearth electrode；4. piezoelectric film；5. top electrode；6. prepare substrate；7. bonded layer；。
Detailed description of the invention
The present invention is described in detail below in conjunction with the drawings and specific embodiments。
Embodiment 1
A kind of solid-state assembly type FBAR, prepared by the method for being prepared by:
One, Grown membrane structure layer is being prepared。
1, preparing substrate 6 surface deposition (0002) oriented single crystal aln layer what the RCA through standard cleaned and dried with what silicon was material, as piezoelectric film 4, the thickness of this aln layer determines according to the frequency range of practical application, as shown in Figure 2。
Wherein, the piezoelectric film 4 of mono-crystal nitride aluminium lamination can be 50sccm(standard state ml/min at trimethyl aluminium (TMA) flow) left and right, NH3Flow is 3slm(standard state liter/min) left and right, Ar flow is about 1slm, underlayer temperature is about 950 DEG C, reative cell stagnation pressure be about 40Tor parameter under by MOCVD (Metal-organicChemicalVaporDeposition, metallorganic chemical vapor deposition) deposition obtain。
2, using rf magnetron sputtering system, deposit layer of metal molybdenum as hearth electrode 3 with pure molybdenum target (purity 99.999%) at mono-crystal nitride aluminium lamination surface sputtering, thickness is 100 ~ 300nm, as shown in Figure 3。
3, radio frequency magnetron is adopted to spatter system 3 groups of silicon dioxide of alternating growth/tungsten Bragg reflecting layer 2 on hearth electrode 3。Wherein, silicon dioxide is as low acoustic impedance layer, and tungsten is as high acoustic impedance layer, and every layer thickness is the 1/4 of respective frequencies wave length of sound。As shown in Figure 4。
Two, flip bonded。
By Au-Sn eutectic bonding, what step one prepared prepares substrate 6 together with the membrane structure layer of growth on it, with Bragg reflecting layer 2 for bonding face, is mutually bonded with supporting the single polysilicon of throwing of substrate 1。As shown in Figure 5。
Three, substrate is prepared in removal。
Substrate 6 will be prepared by mechanical reduction and dry etching two-step process to remove, expose single-crystal aluminum nitride piezoelectric film 4。As shown in Figure 6。
Four, rear operation。
1, on the piezoelectric film exposed, sputtering sedimentation layer of metal molybdenum is as top electrode 5, and thickness is 100 ~ 200nm。
2, by photoetching and etching technics, the figure of aln layer figure and top electrode is successively obtained respectively。As shown in Figure 7。
Finally, form the structure stacked gradually as supporting substrate 1, Prague emission layer 2, hearth electrode 3, piezoelectric film 4 and top electrode 5, obtain solid-state assembly type FBAR。
Embodiment 2
A kind of solid-state assembly type FBAR, prepared by the method for being prepared by:
One, Grown membrane structure layer is being prepared。
1, depositing (0002) oriented single crystal aln layer with substrate 6 surface of preparing that sapphire is material by MOCVD what the RCA through standard cleaned and dried, as piezoelectric film 4, the thickness of this aln layer determines according to the frequency range of practical application。
2, on single-crystal aluminum nitride piezoelectric film 4 surface, using rf magnetron sputtering system, deposit layer of metal molybdenum as hearth electrode 3 with pure molybdenum target (purity 99.999%) at mono-crystal nitride aluminium lamination surface sputtering, thickness is 100 ~ 300nm。
3, DC magnetron sputtering system 3 groups of aluminum of alternating growth/tungsten Bragg reflecting layer 2 on hearth electrode 3 is adopted。Wherein, aluminum is as low acoustic impedance layer, and tungsten is as high acoustic impedance layer, and every layer thickness is the 1/4 of respective frequencies wave length of sound。
Two, flip bonded。
By Cu-Sn eutectic bonding, what step one prepared prepares substrate 6 together with the membrane structure layer of growth on it, with Bragg reflecting layer 2 for bonding face, is mutually bonded with single polysilicon support substrate 1 of throwing。
Three, substrate is prepared in removal。
By laser lift-off technique, produce strong absorption at sapphire and AlN interface after laser light sapphire, it is achieved AlN epitaxial layer prepares separating of substrate 6 with sapphire, exposes single-crystal aluminum nitride piezoelectric film 4。
Four, rear operation。
At piezoelectric film 4 surface sputtering Mo as top electrode 5, by photoetching and etching technics, successively obtain the figure of aln layer figure and top electrode respectively。
Finally, form the structure stacked gradually as supporting substrate 1, supporting layer 2, hearth electrode 3, piezoelectric film 4 and top electrode 5, obtain cavity type FBAR。
Embodiment described above only have expressed the several embodiments of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention。It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to making some deformation and improvement, these broadly fall into protection scope of the present invention。Therefore, the protection domain of patent of the present invention should be as the criterion with claims。
Claims (4)
1. the preparation method of a solid-state assembly type FBAR, it is characterised in that comprise the following steps:
Preparing the membrane structure layer made on substrate in this acoustic resonator, stand-by；This membrane structure layer includes piezoelectric film, hearth electrode, Bragg reflecting layer；
It is fixed on preparing substrate on support substrate together with the membrane structure layer made on it, and is fixed on support substrate with the one side of this membrane structure layer, make membrane structure layer be connected with each other with supporting substrate；
Substrate will be prepared remove, and prepare substrate film structure sheaf surface deposition top electrode having peeled off；
Form the structure stacked gradually as supporting substrate, Bragg reflecting layer, hearth electrode, piezoelectric film and top electrode。
2. preparation method according to claim 1, it is characterized in that, membrane structure layer in this acoustic resonator described with supporting the interconnective method of substrate is, first making membrane structure layer on substrate is being prepared, by viscose glue bonding, eutectic bonding, metal, the mode of diffusion interlinked, anode linkage or melted bonding, makes the membrane structure layer in this acoustic resonator be connected with each other with supporting substrate。
3. preparation method according to claim 1, it is characterised in that the described material preparing substrate and support substrate is selected from: silicon, sapphire, glass。
4. preparation method according to claim 1, it is characterised in that described membrane structure layer includes piezoelectric film, hearth electrode, Bragg reflecting layer；
Successively at the piezoelectric film preparing substrate Epitaxial growth monocrystalline, at piezoelectric film surface depositions of bottom electrode, deposit Bragg reflecting layer on hearth electrode surface；Bragg reflecting layer is alternately made up of more than 2 groups acoustic impedance retes and low acoustic impedance rete；
It is fixed on laminated for the Bragg reflection of membrane structure layer on support substrate；
Substrate will be prepared remove, expose piezoelectric film；
Piezoelectric film deposits top electrode, and is obtained top electrode figure and piezoelectric film figure by the mode of photoetching, etching。
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610028453.4A CN105703733A (en) | 2016-01-18 | 2016-01-18 | Method for preparing solid assembled film bulk acoustic wave resonator |
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| CN201610028453.4A CN105703733A (en) | 2016-01-18 | 2016-01-18 | Method for preparing solid assembled film bulk acoustic wave resonator |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106209002A (en) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | A kind of novel thin film bulk acoustic wave resonator and preparation method thereof |
| CN108259017A (en) * | 2017-03-24 | 2018-07-06 | 珠海晶讯聚震科技有限公司 | The manufacturing method of rf-resonator and wave filter |
| CN108259020A (en) * | 2017-03-24 | 2018-07-06 | 珠海晶讯聚震科技有限公司 | The method for manufacturing rf-resonator and wave filter |
| WO2019056553A1 (en) * | 2017-09-22 | 2019-03-28 | 安徽安努奇科技有限公司 | Method for preparing piezoelectric resonator and piezoelectric resonator |
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