CN110932694A - Film bulk acoustic resonator - Google Patents
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- CN110932694A CN110932694A CN201911138580.XA CN201911138580A CN110932694A CN 110932694 A CN110932694 A CN 110932694A CN 201911138580 A CN201911138580 A CN 201911138580A CN 110932694 A CN110932694 A CN 110932694A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
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Abstract
The invention aims to provide a film bulk acoustic resonator, which is characterized in that a bulk acoustic resonator combining a Bragg reflection layer and a cavity structure is prepared through a bonding layer so as to solve the technical problem that the film bulk acoustic resonator is difficult to obtain larger structural strength and better acoustic reflection effect at the same time; the structure includes: the upper electrode, the piezoelectric layer and the lower electrode are sequentially arranged from top to bottom; a Bragg reflection layer, a cavity structure layer, a bonding layer and a substrate are further arranged below the lower electrode; the substrate is arranged at the lowest layer. According to the invention, the Bragg reflection layer is combined with the cavity structure by using the bonding layer, and the Bragg reflection layer is used for enhancing the structural strength and isolating defects, so that the film quality is ensured; the cavity is utilized to enhance the sound wave reflection effect and improve the Q value of the device.
Description
Technical Field
The invention relates to the technical field of MEMS (micro-electromechanical systems) micro-machining of electronic components, in particular to a film bulk acoustic resonator.
Background
With the rapid development of wireless communication technology, the traditional dielectric filter and surface acoustic wave filter are difficult to meet the requirement of high frequency, and the new generation of film bulk acoustic resonator well meets the requirement. The film bulk acoustic resonator in the prior art is mainly classified into a bragg reflection type and a cavity type. The Bragg reflection type has the advantages of higher structural strength, and the cavity type has the advantages of good sound wave reflection effect and simple structure. The current piezoelectric film is mainly an aluminum nitride film (CN101958696), and is difficult to ensure the lattice orientation of the film due to the adoption of an electron beam deposition mode, and in addition, the film is deposited on a metal electrode, the uniformity of the film is influenced by the electrode layer, so that the quality of the film is influenced, multiple harmonics are generated by a device, the resonant frequency is influenced, and the electric coupling coefficient of the aluminum nitride film is not high, so that the high-frequency requirement is difficult to achieve.
The high-quality piezoelectric film can be obtained by adopting wafer bonding transfer. The high-quality piezoelectric thin film can be prepared on a target substrate by transferring the material of a single crystal wafer or the material of a wafer with a high-quality epitaxial piezoelectric layer through high-energy ion implantation and combining with a wafer bonding process. However, since the thickness of the piezoelectric film is usually in the micron or even sub-micron level, the film is warped or recessed due to defects such as bubbles generated in the bonding layer, thereby affecting the quality of the film.
Therefore, it is necessary to provide a film bulk acoustic resonator in view of the above problems.
Disclosure of Invention
The invention aims to provide a film bulk acoustic resonator, which is prepared by a bonding layer and combines a Bragg reflection layer with a bulk acoustic resonator with a cavity structure, so as to solve the technical problem that the film bulk acoustic resonator cannot have both larger structural strength and better acoustic reflection effect.
The invention provides a film bulk acoustic resonator, comprising: the upper electrode, the piezoelectric layer and the lower electrode are sequentially arranged from top to bottom; a Bragg reflection layer, a cavity structure layer, a bonding layer and a substrate are further arranged below the lower electrode; the substrate is arranged at the lowest layer.
Further, the bragg reflection layer, the cavity structure layer and the bonding layer are stacked from top to bottom in the following order: bragg reflection layer, bonding layer, cavity structural layer.
Further, the bonding layer is formed after double-sided or single-sided preparation.
Further, the lower electrode is a non-patterned lower electrode or a patterned lower electrode.
Further, the bragg reflection layer, the cavity structure layer and the bonding layer are stacked from top to bottom in the following order: the structure comprises a Bragg reflection layer, a cavity structure layer and a bonding layer; the bonding layer is formed after double-side preparation.
Further, the bragg reflection layer, the cavity structure layer and the bonding layer are stacked from top to bottom in the following order: cavity structural layer, bonding layer, Bragg reflection stratum.
Further, the Bragg reflection layer comprises a low acoustic impedance Bragg reflection layer and a high acoustic impedance Bragg reflection layer; the low acoustic impedance Bragg reflection layer is arranged on the upper end face of the high acoustic impedance Bragg reflection layer.
Furthermore, the number of the Bragg reflection layers is multiple; and the Bragg reflecting layers are continuously stacked.
Further, the Bragg reflection layer with low acoustic impedance is made of Al, Ti or SiO2A material.
Furthermore, the Bragg reflection layer with high acoustic impedance is selected from Mo, W, Au, Nb, Ni, Pt, Ta, AlN and HfO2MgO, tantalum oxide or Si3N4A material.
Further, the bonding layer is generated by polymer bonding, hydrophilic bonding or metal bonding.
Further, the polymer bonding employs BCB as the polymer material; the hydrophilic bonding adopts SiO2As a hydrophilic bonding material; the metal bonding adopts Cu, Au, Cr or Sn as a metal bonding material.
Further, the cavity structure layer is a cavity layer prepared by graphical growth or a cavity layer prepared by etching.
Furthermore, the growth material for preparing the film bulk acoustic resonator is metal and Si3N4Or SiO2。
Further, the substrate is lithium niobate or a heterogeneous material.
Further, the substrate is silicon.
Further, the Bragg reflection layer is prepared on the wafer injection surface directly or on an injection wafer with a lower electrode.
Further, the Bragg reflection layer is made of a metal or nonmetal conductive material.
Further, the thickness of the bragg reflector layer is 1/4, 3/4, 5/4 or 7/4 of the wavelength in the layer.
Compared with the prior art, the film bulk acoustic resonator provided by the invention has the following advantages:
according to the invention, the Bragg reflection layer is combined with the cavity structure by using the bonding layer, and the Bragg reflection layer is used for enhancing the structural strength and isolating defects, so that the film quality is ensured; the cavity is utilized to enhance the sound wave reflection effect and improve the Q value of the device.
Furthermore, the bulk acoustic wave resonator combining the Bragg reflection layer and the cavity structure is prepared through the bonding layer, and has higher structural strength and better acoustic reflection effect.
Furthermore, the invention adopts the wafer bonding transfer technology to prepare the high-quality monocrystal lithium niobate thin film, the position and the mode of the bonding layer are flexible and changeable, the bonding position is far away from the piezoelectric plate, and the bonding success rate is high.
Furthermore, the Bragg reflection layer of the invention directly grows on the injection piece, and the Bragg reflection layer not only serves as an isolation layer, but also serves as a support layer. Meanwhile, the device has the functions of isolating defects, reinforcing the structure and reflecting sound waves. The bragg reflector also functions as a lower electrode when a metal is used.
Furthermore, when the lower electrode is patterned, the Bragg reflection layer can be planarized or not. When the planarization treatment is not performed, the flatness of the bonding surface is ensured by the fluidity of the polymer.
Further, the bragg reflection layer is made of a metal material or a non-metal conductive material, and can serve as a lower electrode. The Bragg reflection layer plays a role in isolating the bonding layer, and due to the existence of the Bragg reflection layer, the defects of bubbles, microscopic fluctuation and the like caused by byproducts in the curing process of the polymer bonding layer cannot damage the upper laminated electrical layer. In addition, the Bragg reflection layer is used as a supporting layer of the piezoelectric layer, and the piezoelectric film can be prevented from cracking in the bonding process due to the large thickness.
Further, the position of the bonding layer of the present invention may be above or below the cavity structure layer. When the cavity structure layer is prepared on the Bragg reflection layer, the bonding layer is positioned below the cavity structure layer; when the cavity structure layer is prepared on the substrate, the bonding layer is positioned above the cavity structure layer.
Furthermore, the lower electrode can be patterned or not patterned. When the lower electrode is patterned, the first bragg reflection layer below the lower electrode needs to be made of a dielectric material. In addition, when the lower electrode is patterned, the patterned structure may cause the bragg reflector to be uneven. The Bragg reflection layer can be flattened firstly, and then the bonding layer is prepared; or preparing a Bragg reflection layer and then flattening the bonding layer; it is also possible to directly grow a bragg reflective layer and then use polymer bonding to maintain the flatness of the bonding surface by utilizing the fluidity of the polymer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 2 is a schematic view of the structure of an intermediate product obtained in step 1 in example 1 of the present invention;
FIG. 3 is a schematic structural view of an intermediate product obtained in step 2 in example 1 of the present invention;
FIG. 4 is a schematic structural view of an intermediate product obtained in step 3 in example 1 of the present invention;
FIG. 5 is a schematic view of the structure of an intermediate product obtained in step 4 in example 1 of the present invention;
FIG. 6 is a schematic view showing the structure of an intermediate product obtained in step 5 in example 1 of the present invention;
fig. 7 is a schematic structural diagram of the finished product of the film bulk acoustic resonator obtained in step 6 in embodiment 1 of the present invention;
FIG. 8 is a schematic structural view of an intermediate product obtained in step 1 in example 2 of the present invention;
FIG. 9 is a schematic structural view of an intermediate product obtained in step 2 in example 2 of the present invention;
FIG. 10 is a schematic view showing the structure of an intermediate product obtained in step 3 in example 2 of the present invention;
FIG. 11 is a schematic structural view of an intermediate product obtained in step 4 in example 2 of the present invention;
FIG. 12 is a schematic view showing the structure of an intermediate product obtained in step 5 in example 2 of the present invention;
fig. 13 is a schematic structural diagram of the finished product of the thin film bulk acoustic resonator obtained in step 6 in embodiment 2 of the present invention;
FIG. 14 is a schematic structural view of an intermediate product obtained in step 1 in example 3 of the present invention;
FIG. 15 is a schematic structural view of an intermediate product obtained in step 2 in example 3 of the present invention;
FIG. 16 is a schematic structural view of an intermediate product obtained in step 3 in example 3 of the present invention;
FIG. 17 is a schematic structural view of an intermediate product obtained in step 4 in example 3 of the present invention;
FIG. 18 is a schematic structural view of an intermediate product obtained in step 5 in example 3 of the present invention;
FIG. 19 is a schematic view showing the structure of an intermediate product obtained in step 6 in example 3 of the present invention;
fig. 20 is a schematic structural diagram of the finished film bulk acoustic resonator obtained in step 7 in embodiment 3 of the present invention;
FIG. 21 is a schematic structural view of an intermediate product obtained in step 1 in example 4 of the present invention;
FIG. 22 is a schematic structural view of an intermediate product obtained in step 2 in example 4 of the present invention;
FIG. 23 is a schematic structural view of an intermediate product obtained in step 3 in example 4 of the present invention;
FIG. 24 is a schematic structural view of an intermediate product obtained in step 4 in example 4 of the present invention;
FIG. 25 is a schematic structural view of an intermediate product obtained in step 5 in example 4 of the present invention;
FIG. 26 is a schematic structural view of an intermediate product obtained in step 6 in example 4 of the present invention;
fig. 27 is a schematic structural diagram of the finished film bulk acoustic resonator obtained in step 7 in embodiment 4 of the present invention;
FIG. 28 is a schematic structural view of an intermediate product obtained in step 1 in example 5 of the present invention;
FIG. 29 is a schematic structural view of an intermediate product obtained in step 2 in example 5 of the present invention;
FIG. 30 is a schematic structural view of an intermediate product obtained in step 3 in example 5 of the present invention;
FIG. 31 is a schematic structural view of an intermediate product obtained in step 4 in example 5 of the present invention;
FIG. 32 is a schematic structural view of an intermediate product obtained in step 5 in example 5 of the present invention;
fig. 33 is a schematic structural diagram of the finished product of the film bulk acoustic resonator obtained in step 6 in embodiment 5 of the present invention.
Reference numerals: the structure comprises an upper electrode-100, a piezoelectric layer-200, a lower electrode-300, a Bragg reflection layer-400, a cavity structure layer-500, a bonding layer-600, a substrate-700, a low acoustic impedance Bragg reflection layer-410 and a high acoustic impedance Bragg reflection layer-420.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1, the present invention provides a film bulk acoustic resonator including: an upper electrode 100, a piezoelectric layer 200 and a lower electrode 300 arranged in sequence from top to bottom; a bragg reflection layer 400, a cavity structure layer 500, a bonding layer 600 and a substrate 700 are further arranged below the lower electrode 300; the substrate 700 is disposed at the bottommost layer.
Preferably, as shown in fig. 1, in one preferred embodiment of the present invention, the bragg reflector 400 includes a low acoustic impedance bragg reflector 410 and a high acoustic impedance bragg reflector 420; the low acoustic impedance bragg reflector layer 410 is disposed on an upper end surface of the high acoustic impedance bragg reflector layer 420.
Preferably, in one of the preferred technical solutions of the present application, the number of the reflective layers 400 is multiple; a plurality of the reflective layers 400 are disposed in a continuous stack.
It should be noted that the structural scheme of the thin film bulk acoustic resonator shown in fig. 1 is not the only structural scheme preferably adopted in the present application, the structure of the thin film bulk acoustic resonator described in the present application is not limited to the stacking generation order shown in fig. 1, the preferred arrangement order of the bragg reflection layer, the cavity structure layer, and the bonding layer is referred to the following preparation examples of 5 different thin film bulk acoustic resonators, and the structural schemes of the thin film bulk acoustic resonators disclosed in the following examples are all emphasized and protected in the present application.
In order to achieve the above object, the present invention provides a method for preparing the following 5 different structures of film bulk acoustic resonators:
example 1:
in this embodiment, the film bulk acoustic resonator is manufactured by preparing a bonding layer on a single surface, where the bonding layer is located below the cavity structure layer.
Step 1: as shown in fig. 2, a lower electrode 300 is prepared by implanting a wafer on the lower end surface of the piezoelectric layer 200;
step 2: as shown in fig. 3, a low acoustic impedance bragg reflector layer 410 and a high acoustic impedance bragg reflector layer 420 are grown under the lower electrode 300;
and step 3: as shown in fig. 4, a cavity structure layer 500 is grown under the high acoustic impedance bragg reflector layer 420;
and 4, step 4: as shown in fig. 5, a bonding layer 600 is prepared over a substrate 700;
and 5: as shown in fig. 6, the substrate 700 is connected to the cavity structure layer 500 through the bonding layer 600 by a bonding and peeling operation;
step 6: as shown in fig. 7, a finished product of the thin film bulk acoustic resonator is obtained by preparing a patterned upper electrode 100 on the upper end face of a piezoelectric layer 200.
Example 2:
in this embodiment, the film bulk acoustic resonator is manufactured by preparing a bonding layer on a single surface, where the bonding layer is located above the cavity structure layer.
Step 1: as shown in fig. 8, a lower electrode 300 is prepared by implanting a wafer on the lower end face of the piezoelectric layer 200;
step 2: as shown in fig. 9, a low acoustic impedance bragg reflector layer 410 and a high acoustic impedance bragg reflector layer 420 are grown under the lower electrode 300;
and step 3: as shown in fig. 10, a bonding layer 600 is prepared under the high acoustic impedance bragg reflector layer 420;
and 4, step 4: as shown in fig. 11, a cavity structure layer 500 is grown over a substrate 700;
and 5: as shown in fig. 12, the high acoustic impedance bragg reflector layer 420 is connected to the cavity structure layer 500 through the bonding layer 600 by a bonding and stripping operation;
step 6: as shown in fig. 13, a patterned upper electrode 100 is prepared on the upper end face of the piezoelectric layer 200 to obtain a finished product of the thin film bulk acoustic resonator.
Example 3:
in this embodiment, the film bulk acoustic resonator is manufactured by preparing a bonding layer on both sides, where the bonding layer is located below the cavity structure layer.
Step 1: as shown in fig. 14, a lower electrode 300 is prepared by implanting a sheet into the lower end face of the piezoelectric layer 200;
step 2: as shown in fig. 15, a low acoustic impedance bragg reflector layer 410 and a high acoustic impedance bragg reflector layer 420 are grown under the lower electrode 300;
and step 3: as shown in fig. 16, a cavity structure layer 500 is grown under the high acoustic impedance bragg reflector layer 420;
and 4, step 4: as shown in fig. 17, a bonding layer 600 is prepared under the cavity structure layer 500;
and 5: as shown in fig. 18, a bonding layer 600 is prepared over a substrate 700;
step 6: as shown in fig. 19, the cavity structure layer 500 is connected to the substrate 700 through the bonding layer 600 by a bonding and peeling operation;
and 7: as shown in fig. 20, a patterned upper electrode 100 is prepared on the upper end face of the piezoelectric layer 200 to obtain a finished product of the thin film bulk acoustic resonator.
Example 4:
in this embodiment, the film bulk acoustic resonator is manufactured by preparing a bonding layer on both sides, where the bonding layer is located above the cavity structure layer.
Step 1: as shown in fig. 21, a lower electrode 300 is prepared by implanting a sheet into the lower end face of the piezoelectric layer 200;
step 2: as shown in fig. 22, a low acoustic impedance bragg reflector layer 410 and a high acoustic impedance bragg reflector layer 420 are grown under the lower electrode 300;
and step 3: as shown in fig. 23, a bonding layer 600 is prepared under the high acoustic impedance bragg reflector layer 420;
and 4, step 4: as shown in fig. 24, a cavity structure layer 500 is grown over a substrate 700;
and 5: as shown in fig. 25, a bonding layer 600 is prepared above the cavity structure layer 500;
step 6: as shown in fig. 26, the cavity structure layer 500 is connected to the bragg reflector 420 through the bonding layer 600 by bonding and peeling operations;
and 7: as shown in fig. 27, a patterned upper electrode 100 is prepared on the upper end face of the piezoelectric layer 200 to obtain a finished product of the thin film bulk acoustic resonator.
Example 5:
in this embodiment, the film bulk acoustic resonator is manufactured by patterning the lower electrode.
Step 1: as shown in fig. 28, a patterned lower electrode 300 is prepared by implanting a sheet into the lower end face of the piezoelectric layer 200;
step 2: as shown in fig. 29, a low acoustic impedance bragg reflector layer 410 and a high acoustic impedance bragg reflector layer 420 are grown under the piezoelectric layer 200 and the patterned lower electrode 300;
and step 3: as shown in fig. 30, a bonding layer 600 is prepared under the high acoustic resistance anti-reflection layer 420;
and 4, step 4: as shown in fig. 31, a cavity structure layer 500 is grown over a substrate 700;
and 5: as shown in fig. 32, the cavity structure layer 500 is connected to the high acoustic resistance anti-reflection layer 420 through the bonding layer 600 by a bonding and peeling operation;
step 6: as shown in fig. 33, a patterned upper electrode 100 is prepared on the upper end face of the piezoelectric layer 200 to obtain a finished product of the thin film bulk acoustic resonator.
The technical advantages of the film bulk acoustic resonator of the invention are as follows:
1. the invention adopts the wafer bonding transfer technology to prepare the high-quality monocrystal lithium niobate film. The bulk acoustic wave resonator combining the Bragg reflection layer and the cavity structure is prepared through the bonding layer, and has high structural strength and good acoustic reflection effect. The wafer bonding transfer technology is adopted to prepare the high-quality monocrystal lithium niobate thin film, the position and the mode of a bonding layer are flexible and changeable, the bonding position is far away from a piezoelectric plate, and the bonding success rate is high.
2. The Bragg reflection layer of the invention is directly prepared on the injection sheet or prepared on the injection sheet with the lower electrode.
3. The invention combines the Bragg reflection layer structure with the cavity structure by utilizing the bonding layer, so that the resonator has higher structural strength and better sound reflection effect at the same time.
4. The bragg reflector may serve as a bottom electrode when a metal material or other conductive material is used. The Bragg reflection layer plays a role in isolating the bonding layer, and due to the existence of the Bragg reflection layer, the defects of bubbles, microscopic fluctuation and the like caused by byproducts in the curing process of the polymer bonding layer can not damage the upper laminated electrical layer.
5. The Bragg reflection layer is used as a support layer of the piezoelectric layer, and the piezoelectric film can be prevented from cracking in the bonding process due to the large thickness.
6. The Bragg reflection layer is directly grown on the injection sheet and serves as an isolation layer and a support layer. Meanwhile, the device has the functions of isolating defects, reinforcing the structure and reflecting sound waves. The bragg reflector also functions as a lower electrode when a metal is used.
7. The bragg reflector layer may include one or more pairs of low acoustic impedance and high acoustic impedance anti-reflective layers with alternating layers of high and low acoustic impedance material, the bragg reflector layer having a thickness 1/4 times the wavelength in the layer.
8. The bonding layer location of the present invention can be located above the cavity or below the cavity. When the cavity structure layer is prepared on the reflecting layer, the bonding layer is positioned below the cavity; when the cavity structure is prepared on the substrate, the bonding layer is positioned above the cavity.
9. The lower electrode may or may not be patterned. When in patterning, the first Bragg reflection layer below the lower electrode needs to be made of a dielectric material.
10. When the lower electrode is patterned, the patterned structure may cause the bragg reflector to be uneven. The Bragg reflection layer can be flattened firstly, and then the bonding layer is prepared; or preparing a Bragg reflection layer and then flattening the bonding layer; it is also possible to directly grow a bragg reflective layer and then use polymer bonding to maintain the flatness of the bonding surface by utilizing the fluidity of the polymer. When the lower electrode is patterned, the Bragg reflection layer can be planarized or not. When the planarization treatment is not performed, the flatness of the bonding surface is ensured by the fluidity of the polymer.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A thin film bulk acoustic resonator comprising: the upper electrode, the piezoelectric layer and the lower electrode are sequentially arranged from top to bottom; the structure is characterized in that a Bragg reflection layer, a cavity structure layer, a bonding layer and a substrate are further arranged below the lower electrode; the substrate is arranged at the lowest layer.
2. The film bulk acoustic resonator according to claim 1, wherein the bragg reflector layer, the cavity structure layer and the bonding layer are stacked in the following order from top to bottom: bragg reflection layer, bonding layer, cavity structural layer.
3. The film bulk acoustic resonator according to claim 2, wherein the bonding layer is formed after double-sided or single-sided fabrication.
4. The film bulk acoustic resonator of claim 2, wherein the bottom electrode is a non-patterned bottom electrode or a patterned bottom electrode.
5. The film bulk acoustic resonator according to claim 1, wherein the bragg reflector layer, the cavity structure layer and the bonding layer are stacked in the following order from top to bottom: the structure comprises a Bragg reflection layer, a cavity structure layer and a bonding layer; the bonding layer is formed after double-side preparation.
6. The film bulk acoustic resonator according to claim 1, wherein the bragg reflector layer, the cavity structure layer and the bonding layer are stacked in the following order from top to bottom: cavity structural layer, bonding layer, Bragg reflection stratum.
7. The thin film bulk acoustic resonator according to any one of claims 1 to 6, wherein the Bragg reflection layer comprises a low acoustic Bragg reflection layer and a high acoustic Bragg reflection layer; the low-sound Bragg reflection layer is arranged on the upper end face of the high-sound Bragg reflection layer.
8. The film bulk acoustic resonator according to claim 7, wherein the bragg reflection layers are provided in a plurality of layers; and the Bragg reflecting layers are continuously stacked.
9. The film bulk acoustic resonator according to claim 7, wherein the low acoustic Bragg reflection layer is Al or SiO2Or a Ti material.
10. The film bulk acoustic resonator of claim 1, wherein the high acoustic bragg gratingThe lattice reflection layer is selected from Mo, W, Au, Nb, Ni, Pt, Ta, AlN and HfO2、MgO、TiO2Or Si3N4A material.
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| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
| CN112886940A (en) * | 2021-01-13 | 2021-06-01 | 武汉大学 | FBAR filter easy to integrate |
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