CN107244645A - Silicon substrate ScAlN film GHz resonators and preparation method thereof - Google Patents
Silicon substrate ScAlN film GHz resonators and preparation method thereof Download PDFInfo
- Publication number
- CN107244645A CN107244645A CN201710470903.XA CN201710470903A CN107244645A CN 107244645 A CN107244645 A CN 107244645A CN 201710470903 A CN201710470903 A CN 201710470903A CN 107244645 A CN107244645 A CN 107244645A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- thickness
- auxiliary
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 112
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 273
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 239000002346 layers by function Substances 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000001259 photo etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 230000012010 growth Effects 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000007773 growth pattern Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
Abstract
The present invention relates to a kind of silicon substrate ScAlN films GHz resonators and preparation method thereof, the resonator from top to bottom includes wire bonding auxiliary layer, upper electrode layer, functional layer, auxiliary layer, crystal seed layer, Bragg reflecting layer, device layer substrate, upper surface oxide layer, structure sheaf substrate and upper surface oxide layer successively；The structure sheaf substrate is located at directly over cavity with device layer substrate formation cavity, Bragg reflecting layer, and auxiliary layer is disposed in parallel on crystal seed layer as the patterned auxiliary layer of functional layer and functional layer.The resonator of the present invention can suppress sound wave loss to greatest extent, improve the performance of device by the combination of Bragg reflecting layer and cavity type structure.
Description
Technical field
The invention belongs to microcomputer electrical domain, it is related to silicon substrate ScAlN film GHz resonators and preparation method thereof.
Background technology
Aluminum nitride piezoelectric film has the high velocity of sound, high temperature resistant, steady performance, and the especially characteristic with CMOS technology is simultaneous
Hold, make it by domestic and international extensive concern.Silicon substrate AlN-MEMS piezoelectric devices can be widely used in sensor, resonator and energy
Measure the fields such as collector.
When silicon substrate AlN films are used for the fields such as operative sensor, resonator and energy harvester, there is electromechanical coupling factor
Not high and quasistatic D33The low deficiency of piezoelectric modulus.Bulk acoustic wave (BAW) device such as based on Bragg reflecting layer or air lumen type,
The characteristics of limitation and AlN films due to Bragg reflecting layer uniformity high velocity of sound, sound wave can be made in the propagation of reflecting layer bottom
There is a certain amount of leaky wave, so as to cause energy loss；When the BAW device using cavity type, either using sacrifice layer work
Skill still uses back pierced process, and the residual or adhesion in cavity can cause device performance significantly to decay；Aluminium nitride scandium
(ScAlN) piezoelectric membrane can improve static D while holding ALN piezoelectric membranes intrinsic physical attribute33Piezoelectric modulus and
Electromechanical coupling factor, but because when the presence of Sc elements causes wet method pattern ScAlN films, electrode surface has residual to cause device
Part internal resistance increases, hydraulic performance decline.
Therefore, a kind of novel silicon base ScAlN film GHz resonators are needed badly effectively to overcome above-mentioned deficiency, boost device
Energy.
The content of the invention
In view of this, it is an object of the invention to provide a kind of silicon substrate ScAlN films GHz resonators, and its preparation is provided
Method.
To reach above-mentioned purpose, the present invention provides following technical scheme：
1. silicon substrate ScAlN film GHz resonators, from top to bottom include wire bonding auxiliary layer, upper electrode layer, function successively
Layer, auxiliary layer, crystal seed layer, Bragg reflecting layer, device layer substrate, upper surface oxide layer, structure sheaf substrate and upper surface oxidation
Layer；The structure sheaf substrate is located at directly over cavity with device layer substrate formation cavity, Bragg reflecting layer, and auxiliary layer is used as work(
The patterned auxiliary layer of ergosphere and functional layer are disposed in parallel on crystal seed layer.
Further, the device layer substrate and structure sheaf substrate are in the same size；Each metal level of Bragg reflecting layer and crystal seed
Layer is in the same size and is narrower than 10~30 μm of device layer substrate；Auxiliary layer is arranged side by side as the patterned auxiliary layer of functional layer and functional layer
On crystal seed layer, and the two width is consistent with crystal seed layer, and upper electrode layer and wire bonding auxiliary layer are in the same size and be narrower than work(
1~10 μm of ergosphere.
Further, the Bragg reflecting layer is formed by 2~10 layers of two kinds of metal alternating growths covering, described two metals
Acoustic impedance difference be 6 × 106g/cm2S~10 × 106g/cm2s。
Further, described two metals are aluminium and iridium.
Further, the depth of the cavity is 3~10 μm, and cavity width is 500~1000 μm.
Further, lower surface oxide layer formation alignment mark, alignment mark is wide 10~30 μm.
2nd, the preparation method of the silicon substrate ScAlN film GHz resonators described in any of the above is following steps：
(1) silicon chip for taking thickness to be 300~500 μm is structure sheaf substrate, and two-sided thermal oxide respectively makes on structure sheaf substrate
Lower surface forms the SiO that thickness is 200~350nm respectively2Layer, i.e. upper surface oxide layer and lower surface oxide layer；
(2) the structure sheaf substrate after being aoxidized to step (1) carries out corrosion and graphical, makes surface oxide layer thereon and structure
Layer substrate formation cavity, the opposite direction formation alignment mark of lower surface oxide layer；
(3) a piece of silicon chip is separately taken as device layer substrate and structure sheaf substrate bonding and is annealed, mechanical reduction and polisher
Part layer substrate makes its thickness be 30~150 μm；The device layer substrate is as structure sheaf substrate size；
(4) in two kinds of metal levels of device layer substrate surface successively alternating growth sound and graphical, formation Bragg reflecting layer,
Single metal layer thickness is 15~30nm；The Bragg reflecting layer is smaller than device layer substrate width 10~30 μm；And it is placed in sky
Directly over chamber；
(5) one layer of molybdenum is grown on step (4) Bragg reflecting layer again, crystal seed layer is formed, thickness is 160~300nm,
And it is graphical；
(6) one layer of auxiliary layer is grown on crystal seed layer, thickness is 300~500nm；The auxiliary layer is Al or Ti；
(7) ScAlN films are grown on auxiliary layer, functional layer is formed, thickness is 0.8~1.5 μm, and photoetching is simultaneously graphical, then
Upper electrode layer is grown with Ir, upper electrode layer thickness is 0.2~0.3 μm；
(8) last to grow one layer of wire bonding auxiliary layer on a functional, thickness is 0.6~0.8 μm, photoetching and figure
Change, material is Al.
Further, step (4) described metal is iridium and aluminium.
Further, it is to corrode SiO2 layers, TMAH corrosion structures layer substrate using BHF that the step (2), which forms cavity,；Utilize
Etch stop formation alignment mark during TMAH wet etchings.
Further, step (5) described seed layer thickness is 200nm.
Further, the Bragg reflecting layer, crystal seed layer and auxiliary layer growth pattern take magnetron sputtering mode to grow.
Structure sheaf substrate is SiO with thermal oxide growth2Layer is masking layer, above special process layers substrate
Cavity is formed, is combined with Bragg reflecting layer, alignment mark is formed below in structure sheaf substrate 2.
The beneficial effects of the present invention are：1. the present invention can overcome traditional sacrificial layer process or back pierced process not
Foot, such as easily causes the residual in cavity or adhesion to cause device performance significantly to decay；Aluminium nitride scandium 2. (ScAlN) piezoelectricity is thin
Film can improve static D while holding ALN piezoelectric membranes intrinsic physical attribute33Piezoelectric modulus and electromechanical coupling factor,
Using the present invention, presence due to Sc elements can be effectively overcome so that during wet method pattern ScAlN films, electrode surface has residual
Stay so that device internal resistance increases, the defect such as hydraulic performance decline improves device performance, such as electromechanical coupling factor and quality factor.
Brief description of the drawings
In order that the purpose of the present invention, technical scheme and beneficial effect are clearer, the present invention provides drawings described below and carried out
Explanation：
Fig. 1 is the structural representation of silicon substrate ScAlN film GHz resonators；
Fig. 2 is the silicon substrate ScAlN film GHz Novel resonator devices preparation process 1 of embodiment 1) schematic diagram；
Fig. 3 is the silicon substrate ScAlN film GHz Novel resonators preparation process 2 of embodiment 1) schematic diagram；
Fig. 4 is the silicon substrate ScAlN film GHz Novel resonators preparation process 3 of embodiment 1) schematic diagram；
Fig. 5 is the silicon substrate ScAlN film GHz Novel resonators preparation process 4 of embodiment 1) schematic diagram；
Fig. 6 is the silicon substrate ScAlN film GHz Novel resonators preparation process 5 of embodiment 1) schematic diagram；
Fig. 7 is the silicon substrate ScAlN film GHz Novel resonators preparation process 6 of embodiment 1) schematic diagram；
Fig. 8 is the silicon substrate ScAlN film GHz Novel resonators preparation process 7 of embodiment 1) schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.It is unreceipted specific in embodiment
The experimental method of condition, generally according to normal condition or according to the condition proposed by manufacturer.
Example 1：
The preparation method of silicon substrate ScAlN film GHz resonators, specifically includes following steps：
1) it is structure sheaf substrate 2 to take 4 inches of N-type silicon chips (100 face), and its thickness is 300 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface form the SiO that thickness is 200nm respectively2Layer, i.e. upper surface oxide layer and lower surface oxide layer,
It is referred to as oxide layer 3, as shown in Fig. 2 the left side is side structure schematic diagram, the right is to see schematic diagram above just, same below；
2) photoetching, BHF (hydrofluoric acid etch liquid) corrodes in top SiO23, TMAH of layer (TMAH) corrosion knots
Structure layer substrate 2, forms cavity (3 μm of depth) above, and cavity width is 600 μm；Lower surface oxide layer and cavity opposite direction shape
Into alignment mark (the self-stopping technology characteristic corroded using TMAH), alignment mark is wide 15 μm；As shown in Figure 3；Take 4 inches of N-type silicon chips
(100 face) is bonded as device layer substrate 1 with structure sheaf substrate 2, annealing, is thinned to 40 μm of device layer, is polished, such as Fig. 4 institutes
Show；
3) grow Al/Ir/Al/Ir layers successively on device layer substrate 1 and graphical, form Bragg reflecting layer, individual layer
Iridium or aluminum membranous layer thickness are 20nm；One layer of molybdenum is grown on Bragg reflecting layer again, crystal seed layer is formed, thickness is 200nm, and
Graphically, as shown in Figure 5；
4) the Al layers of auxiliary layer 8 as ScAlN wet method patterns is grown, thickness is 350nm, as shown in Figure 6；
5) ScAlN films are grown on auxiliary layer, functional layer 9 is formed, thickness is 0.8~1.5 μm, and photoetching is simultaneously graphical, then
Upper electrode layer 7 is grown with Ir, upper electrode layer thickness is 0.2~0.3 μm, as shown in Figure 7；
6) Al layers are grown, photoetching is simultaneously graphical, forms wire bonding auxiliary layer 10, thickness is 0.6 μm, as shown in Figure 8.
Alignment mark main function positions for cavity：When the back side is aligned, the particular location of cavity is identified；
The specific thickness of device layer substrate 1 can be according to depending on the resonant frequency for designing device；
When auxiliary layer effect is mainly wet etching in step (5), ScAlN films can be removed clean.
The silicon substrate ScAlN film GHz resonator structures prepared by embodiment 1 draw as shown in figure 1, from top to bottom including successively
Line bonding auxiliary layer 10, upper electrode layer 7, functional layer 9, auxiliary layer 8, crystal seed layer 6, Bragg reflecting layer, device layer substrate 1, oxygen
Change layer 3, structure sheaf substrate 2 and oxide layer 3；The Bragg reflecting layer is alternately formed by metallic aluminum 4 and metal iridium layer 5, institute
Structure sheaf substrate and device layer substrate formation cavity are stated, Bragg reflecting layer is located at directly over cavity, and auxiliary layer is used as functional layer
Patterned auxiliary layer and functional layer are disposed in parallel on crystal seed layer.
Device layer substrate and structure sheaf substrate are in the same size；Each metal level of Bragg reflecting layer and crystal seed layer are in the same size simultaneously
It is narrower than 10~30 μm of device layer substrate；Auxiliary layer as the patterned auxiliary layer of functional layer and functional layer and be listed in crystal seed layer it
On, and the two width is consistent with crystal seed layer, and upper electrode layer and wire bonding auxiliary layer are in the same size and be narrower than the μ of functional layer 1~10
m。
Vacuum of the size of cavity in cavity, the thickness of device layer are determined.
Wherein, the device layer substrate 1 and structure sheaf substrate 2 use high resistant silicon chip, and thickness is 300~500 μm, wherein
Device layer substrate thickness is smaller than structure sheaf substrate；
Oxide layer 3 is grown by the way of thermal oxide, and thickness is 200~350nm；
Bragg reflecting layer is Ir and Al alternating growths, is grown by the way of magnetron sputtering, film thickness uniformity is small
In 1%, thickness in monolayer is 15~30nm；
Auxiliary layer and crystal seed layer are also by the way of magnetron sputtering, auxiliary layer 300~500nm of thickness, seed layer thickness 160
~300nm.
The resonator can suppress sound wave damage to greatest extent by the combination of Bragg reflecting layer and cavity type structure
Consumption, improves the performance of device.
Example 2：
The preparation method of silicon substrate ScAlN film GHz resonators, specifically includes following steps：
1) it is structure sheaf substrate 2 to take 4 inches of N-type silicon chips (100 face), and its thickness is 500 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface form the SiO that thickness is 250nm respectively2Layer 3；
2) photoetching, BHF corrodes in SiO above2Layer 3, TMAH (TMAH) corrosion structure layer substrate 2, above
Cavity (5 μm of depth) is formed, cavity width is 800 μm；Formation alignment mark (the automatic stop corroded using TMAH of lower surface oxide layer
Only characteristic)；Alignment mark is wide 15 μm；
3) take 4 inches of N-type silicon chips (100 face) as device layer substrate 1, be bonded with structure sheaf substrate 2, anneal, be thinned to
100 μm of device layer substrate, polishing；
4) grow Al/Ir/Al/Ir/Al/Ir layers successively on device layer substrate 1 and graphical, form Bragg reflection
Layer, individual layer iridium or aluminum membranous layer thickness are 30nm；One layer of molybdenum is grown on Bragg reflecting layer again, crystal seed layer is formed, thickness is
300nm, and graphically；
5) the Al layers of auxiliary layer as ScAlN wet method patterns is grown, thickness is 450nm；
6) ScAlN films are grown on auxiliary layer, functional layer is formed, thickness is 0.9 μm, and photoetching is simultaneously graphical, then is given birth to Ir
Long upper electrode layer, upper electrode layer thickness is 0.2 μm；
7) Al layers are grown, photoetching is simultaneously graphical, forms wire bonding auxiliary layer 10, thickness is 0.3 μm.
Example 3：
The preparation method of silicon substrate ScAlN film GHz resonators, specifically includes following steps：
1) it is structure sheaf substrate 2 to take 4 inches of N-type silicon chips (100 face), and its thickness is 400 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface form the SiO that thickness is 250nm respectively2Layer 3；
2) photoetching, BHF corrodes in SiO above2Layer 3, TMAH (TMAH) corrosion structure layer substrate 2, above
Cavity (10 μm of depth) is formed, cavity width is 600 μm；Lower surface oxide layer formation alignment mark (using TMAH corrode from
Stop performance), alignment mark is wide 10 μm；
3) take 4 inches of N-type silicon chips (100 face) as device layer substrate 1, be bonded with structure sheaf substrate 2, anneal, be thinned to
150 μm of device layer substrate, polishing；
4) grow Al/Ir/Al/Ir layers successively on device layer substrate 1 and graphical, form Bragg reflecting layer, individual layer
Iridium or aluminum membranous layer thickness are 30nm；One layer of molybdenum is grown on Bragg reflecting layer again, crystal seed layer is formed, thickness is 200nm, and
Graphically；
5) the Al layers of auxiliary layer as ScAlN wet method patterns is grown, thickness is 300nm；
6) ScAlN films are grown on auxiliary layer, functional layer is formed, thickness is 1.2 μm, and photoetching is simultaneously graphical, then is given birth to Ir
Long upper electrode layer, upper electrode layer thickness is 0.3 μm；
7) Al layers are grown, photoetching is simultaneously graphical, forms wire bonding auxiliary layer 10, thickness is 0.5 μm.
Example 4：
The preparation method of silicon substrate ScAlN film GHz resonators, specifically includes following steps：
1) it is structure sheaf substrate 2 to take 4 inches of N-type silicon chips (100 face), and its thickness is 400 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface form the SiO that thickness is 250nm respectively2Layer 3；
2) photoetching, BHF corrodes in SiO above2Layer 3, TMAH (TMAH) corrosion structure layer substrate 2, above
Cavity (10 μm of depth) is formed, cavity width is 600 μm；Lower surface oxide layer formation alignment mark (using TMAH corrode from
Stop performance)；Alignment mark is wide 30 μm
3) take 4 inches of N-type silicon chips (100 face) as device layer substrate 1, be bonded with structure sheaf substrate 2, anneal, be thinned to
150 μm of device layer substrate, polishing；
4) grow Al/Ir/Al/Ir/Al/Ir/Al/Ir layers successively on device layer substrate 1 and graphical, form Prague
Reflecting layer, individual layer iridium or aluminum membranous layer thickness are 20nm；One layer of molybdenum is grown on Bragg reflecting layer again, crystal seed layer is formed, it is thick
Spend for 200nm, and graphically；
5) the Ti layers of auxiliary layer 8 as ScAlN wet method patterns is grown, thickness is 300nm；
6) ScAlN films are grown on auxiliary layer, functional layer is formed, thickness is 1.2 μm, and photoetching is simultaneously graphical, then is given birth to Ir
Long upper electrode layer 7, upper electrode layer thickness is 0.3 μm；
7) Al layers are grown, photoetching is simultaneously graphical, forms wire bonding auxiliary layer 10, thickness is 0.5 μm.
Bragg reflecting layer can also by other two kinds of acoustic impedance differences described two metals acoustic impedance difference for 6 ×
106g/cm2s-10×106g/cm2Prepared by the metal in the range of s, largely the consume of suppression sound could so lose.Prague
Reflecting layer is less than device layer substrate.
In above technical scheme, in addition to N-type silicon chip (100 face), remaining requires different for different bulk acoustic wave devices
It can be carried out well known to a person skilled in the art silicon chip.
Finally illustrate, preferred embodiment above is merely illustrative of the technical solution of the present invention and unrestricted, although logical
Cross above preferred embodiment the present invention is described in detail, it is to be understood by those skilled in the art that can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (10)
1. silicon substrate ScAlN film GHz resonators, it is characterised in that the resonator is from top to bottom auxiliary comprising wire bonding successively
Help layer, upper electrode layer, functional layer, auxiliary layer, crystal seed layer, Bragg reflecting layer, device layer substrate, upper surface oxide layer, structure
Layer substrate and upper surface oxide layer；The structure sheaf substrate is located at cavity with device layer substrate formation cavity, Bragg reflecting layer
Surface, auxiliary layer is disposed in parallel on crystal seed layer as the patterned auxiliary layer of functional layer and functional layer.
2. silicon substrate ScAlN films GHz resonators according to claim 1, it is characterised in that the device layer substrate and knot
Structure layer substrate is in the same size；Each metal level of Bragg reflecting layer and crystal seed layer are in the same size and are narrower than the μ of device layer substrate 10~30
m；Auxiliary layer is as the patterned auxiliary layer of functional layer and functional layer and is listed on crystal seed layer, and the two width and crystal seed layer one
Cause, upper electrode layer and wire bonding auxiliary layer are in the same size and be narrower than 1~10 μm of functional layer.
3. silicon substrate ScAlN films GHz resonators according to claim 1, it is characterised in that the Bragg reflecting layer by
2~10 layers of two kinds of metal alternating growths covering are formed, and the acoustic impedance difference of described two metals is 6 × 106g/cm2S~10 ×
106g/cm2s。
4. silicon substrate ScAlN films GHz resonators according to claim 1, it is characterised in that the depth of the cavity is 3
~10 μm, cavity width is 500~1000 μm.
5. silicon substrate ScAlN films GHz resonators according to claim 1, it is characterised in that lower surface oxide layer is formed pair
Position mark, alignment mark is wide 10~30 μm.
6. the preparation method of the silicon substrate ScAlN film GHz resonators described in claim any one of 1-5, it is characterised in that prepare
Method is following steps：
(1) silicon chip for taking thickness to be 300~500 μm is structure sheaf substrate, and two-sided thermal oxide respectively makes following table on structure sheaf substrate
Face forms the SiO that thickness is 200~350nm respectively2Layer, i.e. upper surface oxide layer and lower surface oxide layer；
(2) the structure sheaf substrate after being aoxidized to step (1) carries out corrosion and graphical, serves as a contrast surface oxide layer thereon and structure sheaf
Bottom forms cavity, the opposite direction formation alignment mark of lower surface oxide layer；
(3) a piece of silicon chip is separately taken as device layer substrate and structure sheaf substrate bonding and is annealed, mechanical reduction and polishing device layer
Substrate makes its thickness be 30~150 μm；The device layer substrate is as structure sheaf substrate size；
(4) in two kinds of metal levels of device layer substrate surface successively alternating growth sound and graphical, formation Bragg reflecting layer, individual layer
Metal layer thickness is 15~30nm；The Bragg reflecting layer is smaller than device layer substrate width 10~30 μm；And it is placed in cavity just
Top；
(5) one layer of molybdenum is grown on step (4) Bragg reflecting layer again, crystal seed layer is formed, thickness is 160~300nm, and is schemed
Shape；
(6) one layer of auxiliary layer is grown on crystal seed layer, thickness is 300~500nm；The auxiliary layer is Al or Ti；
(7) ScAlN films are grown on auxiliary layer, functional layer is formed, thickness is 0.8~1.5 μm, and photoetching is simultaneously graphical, then uses Ir
Upper electrode layer is grown, upper electrode layer thickness is 0.2~0.3 μm；
(8) last to grow one layer of wire bonding auxiliary layer on a functional, thickness is 0.6~0.8 μm, photoetching simultaneously graphical, material
Matter is Al.
7. preparation method according to claim 6, it is characterised in that step (4) described metal is iridium and aluminium.
8. preparation method according to claim 6, it is characterised in that it is to utilize hydrofluoric acid that the step (2), which forms cavity,
Corrode SiO2Layer, TMAH corrosion structure layer substrate；Utilize self-stopping technology during TMAH wet etching
Corrosion forms alignment mark.
9. preparation method according to claim 6, it is characterised in that step (5) described seed layer thickness is 200nm.
10. preparation method according to claim 6, it is characterised in that the Bragg reflecting layer, crystal seed layer and auxiliary layer
Growth pattern takes magnetron sputtering mode to grow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710470903.XA CN107244645B (en) | 2017-06-20 | 2017-06-20 | Silicon substrate ScAlN film GHz resonator and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710470903.XA CN107244645B (en) | 2017-06-20 | 2017-06-20 | Silicon substrate ScAlN film GHz resonator and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107244645A true CN107244645A (en) | 2017-10-13 |
| CN107244645B CN107244645B (en) | 2018-12-28 |
Family
ID=60018299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710470903.XA Active CN107244645B (en) | 2017-06-20 | 2017-06-20 | Silicon substrate ScAlN film GHz resonator and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107244645B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110445474A (en) * | 2018-05-04 | 2019-11-12 | 贵州中科汉天下微电子有限公司 | Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter |
| CN110932694A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学 | Film bulk acoustic resonator |
| US10998279B2 (en) | 2018-08-27 | 2021-05-04 | Infineon Technologies Ag | On-chip integrated cavity resonator |
| WO2024054152A1 (en) * | 2022-09-09 | 2024-03-14 | Rf360 Singapore Pte. Ltd. | Microacoustic filter with a layer arrangement containing a cavity |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070284971A1 (en) * | 2006-06-12 | 2007-12-13 | Kabushiki Kaisha Toshiba | Electronic device |
| CN101305277A (en) * | 2005-09-09 | 2008-11-12 | 西门子公司 | Apparatus and method for moving a liquid by means of a piezoelectric transducer |
| CN102468818A (en) * | 2010-11-01 | 2012-05-23 | 太阳诱电株式会社 | Acoustic wave device |
| CN104321965A (en) * | 2012-05-22 | 2015-01-28 | 株式会社村田制作所 | Bulk wave resonator |
| CN104868871A (en) * | 2014-02-26 | 2015-08-26 | 安华高科技通用Ip(新加坡)公司 | Bulk Acoustic Wave Resonators Having Doped Piezoelectric Material And Frame Elements |
| US20150326200A1 (en) * | 2014-05-08 | 2015-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk Acoustic Wave Devices with Temperature-Compensating Niobium Alloy Electrodes |
| US20160079513A1 (en) * | 2012-01-18 | 2016-03-17 | Analog Devices, Inc. | Doped piezoelectric resonator |
| CN105958956A (en) * | 2016-04-26 | 2016-09-21 | 电子科技大学 | Novel film bulk acoustic resonator and production method thereof |
| CN106026964A (en) * | 2015-07-22 | 2016-10-12 | 邱星星 | Adjustable film body acoustic wave resonator and filter |
| CN106385242A (en) * | 2016-09-12 | 2017-02-08 | 重庆大学 | GHz silicon-based ScAlN thin-film resonator and manufacturing technology thereof |
-
2017
- 2017-06-20 CN CN201710470903.XA patent/CN107244645B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101305277A (en) * | 2005-09-09 | 2008-11-12 | 西门子公司 | Apparatus and method for moving a liquid by means of a piezoelectric transducer |
| US20070284971A1 (en) * | 2006-06-12 | 2007-12-13 | Kabushiki Kaisha Toshiba | Electronic device |
| CN102468818A (en) * | 2010-11-01 | 2012-05-23 | 太阳诱电株式会社 | Acoustic wave device |
| US20160079513A1 (en) * | 2012-01-18 | 2016-03-17 | Analog Devices, Inc. | Doped piezoelectric resonator |
| CN104321965A (en) * | 2012-05-22 | 2015-01-28 | 株式会社村田制作所 | Bulk wave resonator |
| CN104868871A (en) * | 2014-02-26 | 2015-08-26 | 安华高科技通用Ip(新加坡)公司 | Bulk Acoustic Wave Resonators Having Doped Piezoelectric Material And Frame Elements |
| US20150326200A1 (en) * | 2014-05-08 | 2015-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk Acoustic Wave Devices with Temperature-Compensating Niobium Alloy Electrodes |
| CN106026964A (en) * | 2015-07-22 | 2016-10-12 | 邱星星 | Adjustable film body acoustic wave resonator and filter |
| CN105958956A (en) * | 2016-04-26 | 2016-09-21 | 电子科技大学 | Novel film bulk acoustic resonator and production method thereof |
| CN106385242A (en) * | 2016-09-12 | 2017-02-08 | 重庆大学 | GHz silicon-based ScAlN thin-film resonator and manufacturing technology thereof |
Non-Patent Citations (1)
| Title |
|---|
| QIAOZHEN ZHANG 等: ""Enhanecd coupling factor of surface acoustic wave devices employing ScAlN/diamoud layered structure with embedded electrodes"", 《DIAMOND AND RELATED MATERIALS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110445474A (en) * | 2018-05-04 | 2019-11-12 | 贵州中科汉天下微电子有限公司 | Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter |
| US10998279B2 (en) | 2018-08-27 | 2021-05-04 | Infineon Technologies Ag | On-chip integrated cavity resonator |
| CN110932694A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学 | Film bulk acoustic resonator |
| WO2024054152A1 (en) * | 2022-09-09 | 2024-03-14 | Rf360 Singapore Pte. Ltd. | Microacoustic filter with a layer arrangement containing a cavity |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107244645B (en) | 2018-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107244645A (en) | Silicon substrate ScAlN film GHz resonators and preparation method thereof | |
| JP3965026B2 (en) | Bottom electrode across the entire cavity of a substrate mounted bulk acoustic resonator | |
| CN109309483A (en) | A kind of preparation method of support type thin film bulk acoustic wave resonator | |
| CN100386901C (en) | Electronic device and method of fabricating the same | |
| CN110401428A (en) | Thin film bulk acoustic wave resonator and its manufacturing method | |
| CN108092639A (en) | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation | |
| WO2021109444A1 (en) | Bulk acoustic resonator, fabrication method therefor, filter and electronic device | |
| CN110474616A (en) | A kind of air-gap type thin film bulk acoustic wave resonator and preparation method thereof | |
| CN111262543A (en) | Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof | |
| WO2023125756A1 (en) | Preparation method for broadband film bulk acoustic resonator | |
| WO2020056835A1 (en) | Flexible single-crystal lamb wave resonator, and production method therefor | |
| WO2020177555A1 (en) | Bulk acoustic wave resonator having recess and air flap structure, filter and electronic device | |
| CN109502541B (en) | Piezoelectric MEMS ultrasonic sensor and manufacturing method thereof | |
| CN106130498A (en) | FBAR resonator and preparation method thereof | |
| CN111446944A (en) | Air gap type film bulk acoustic resonator beneficial to integration and preparation method thereof | |
| CN101646115B (en) | Silicon micro piezoelectric microphone based on inn-plane polarization of ferroelectric PZT film and manufacture method thereof | |
| CN108871627A (en) | A kind of difference double resonance type acoustic wave pressure sensor | |
| JPWO2018135178A1 (en) | Piezoelectric element and resonator using piezoelectric element | |
| JP5299676B2 (en) | Piezoelectric thin film acoustic resonator and manufacturing method thereof | |
| WO2017002339A1 (en) | Laminated structure, piezoelectric element, and piezoelectric element production method | |
| CN112350679A (en) | Bulk acoustic wave resonator based on silicon piezoelectric film structure and preparation method thereof | |
| JP2005136115A (en) | Electronic device and its manufacturing method | |
| JP2002372974A (en) | Thin-film acoustic resonator and method of manufacturing the same | |
| JP2007037006A (en) | Ultrasonic sensor and manufacturing method thereof | |
| JP6992239B2 (en) | Method for manufacturing PZT thin film laminate for automobiles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |