CN112886940A - FBAR filter easy to integrate - Google Patents
FBAR filter easy to integrate Download PDFInfo
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- CN112886940A CN112886940A CN202110040803.XA CN202110040803A CN112886940A CN 112886940 A CN112886940 A CN 112886940A CN 202110040803 A CN202110040803 A CN 202110040803A CN 112886940 A CN112886940 A CN 112886940A
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- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 230000016507 interphase Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides an FBAR filter easy to integrate, which comprises: the resonator comprises supporting legs of a plurality of Bragg reflection layer structures, a first resonator and a second resonator; the first resonator and the second resonator share supporting legs of a plurality of Bragg reflection layer structures; the first resonator is formed by depositing a mass load, a first upper electrode, a first piezoelectric layer and a first lower electrode in sequence; the second resonator is formed by sequentially depositing a second upper electrode, a second piezoelectric layer and a second lower electrode. The FBAR resonators are coupled by support legs to form a filter, and the resonators can be tuned by applying a mass load on top of the upper electrode to form the filter passband. The FBAR resonators are connected through supporting legs of the Bragg reflection layer alternate structures which are transversely distributed, the mechanical quality factor of the FBAR resonators can be improved, the arrangement modes of the resonators can be diversified, the transverse arrangement mode or the longitudinal stacking mode can be adopted, the integration level of the filter is improved, and the processing cost is reduced.
Description
Technical Field
The invention belongs to the technical field of filters, and particularly relates to an FBAR (fiber bulk acoustic resonator) filter easy to integrate.
Background
With the development of modern wireless communication technology towards high frequency and high speed, higher requirements are put forward on the front-end filter commonly used in radio frequency communication. The working frequency is continuously improved, and simultaneously, higher requirements on the size, the service performance, the stability and the integration of the device are also met. At present, there are two main implementation manners of filters in radio frequency systems: SAW (surface acoustic wave) filters and BAW (bulk acoustic wave) filters. Compared with a surface acoustic wave filter, the bulk acoustic wave filter has the advantages of high working frequency and power capacity, wherein the FBAR (film bulk acoustic resonator) filter has the characteristics of high frequency, low loss and low temperature drift, a steep filter skirt edge, an extremely high Q value, working frequency, sensitivity, resolution, bearable power capacity, small volume and the characteristic that the preparation process is compatible with CMOS (complementary metal oxide semiconductor), and occupies most of the application field of wireless communication. Adopt the supporting legs of the Bragg reflector interphase structure of horizontal distribution at FBAR structure edge, can improve the mechanical quality factor of FBAR syntonizer, improve syntonizer self performance, in addition, it often needs to increase peripheral support frame in FBAR syntonizer outside in order to make a plurality of syntonizers integrated to build traditional FBAR filter, but this kind of traditional hookup mode has often limited FBAR filter's integrated level, the supporting legs hookup through the Bragg reflector interphase structure of horizontal distribution between the FBAR syntonizer can make the syntonizer mode of arranging diversified, can also be for vertical stack mode for horizontal arrangement, can improve the filter fill factor, improve the integrated level of filter, reduce the processing cost.
Disclosure of Invention
The invention provides an FBAR filter easy to integrate, wherein FBAR resonators can be connected through supporting legs of Bragg reflecting layer alternate structures distributed transversely, the mechanical quality factor of the FBAR resonators can be improved, meanwhile, the arrangement modes of the resonators can be diversified through the connection of the supporting legs of the Bragg reflecting layer alternate structures distributed transversely between the FBAR resonators, the transverse arrangement modes can be transverse arrangement modes, and the longitudinal superposition modes can be adopted, so that the filter and even a duplexer are finally manufactured, the integration level of the filter is improved, and the processing cost is reduced.
In order to achieve the purpose, the invention adopts the technical scheme that: an easy-to-integrate FBAR filter, the structure of which comprises: the resonator comprises supporting legs of a plurality of Bragg reflection layer structures, a first resonator and a second resonator; the first resonator and the second resonator share supporting legs of a plurality of Bragg reflection layer structures;
the first resonator and the second resonator are transversely arranged or longitudinally overlapped and arranged through supporting legs of a plurality of Bragg reflection layer structures;
the first resonator is formed by depositing a mass load, a first upper electrode, a first piezoelectric layer and a first lower electrode in sequence;
the second resonator is formed by sequentially depositing a second upper electrode, a second piezoelectric layer and a second lower electrode;
the first upper electrode and the second upper electrode are connected through supporting legs of a plurality of Bragg reflection layer structures;
the first piezoelectric layer and the second piezoelectric layer are connected through supporting legs of a plurality of Bragg reflection layer structures;
the first lower electrode is connected with the second lower electrode through supporting legs of a plurality of Bragg reflection layer structures;
in the FBAR filter easy to integrate, the supporting legs of the bragg reflection layer structure are formed by high acoustic impedance materials and low acoustic impedance materials which are transversely and alternately arranged, and the supporting legs of the bragg reflection layer structure are in a continuous curved surface pattern or a polygon;
in the FBAR filter which is easy to integrate, the first resonator and the second resonator have a shape of a continuous curved pattern or a polygon.
Finally, the filter formed by connecting the first resonator and the second resonator by the supporting legs of the Bragg reflection layer structure can be obtained.
The invention has the beneficial effects that: the FBAR resonators are coupled by support legs to form a filter, and the resonators constituting the filter can be frequency-modulated by applying a mass load on top of the upper electrode to form a filter passband. The supporting legs of the FBAR resonators in the structure of the Bragg reflection layer phases which are transversely distributed are connected, so that the mechanical quality factor of the FBAR resonators can be improved, the arrangement modes of the resonators can be diversified, the transverse arrangement mode or the longitudinal superposition mode can be adopted, the integration level of the filter is improved, and the processing cost is reduced.
Drawings
FIG. 1: the invention is a circuit schematic diagram of an FBAR filter easy to integrate;
FIG. 2: is a schematic diagram of the three-dimensional structure of an easy-to-integrate FBAR filter embodiment 1 of the invention;
FIG. 3: is a schematic diagram of the three-dimensional structure of an easy-to-integrate FBAR filter embodiment 2 of the invention;
FIG. 4: is a schematic diagram of the three-dimensional structure of an easy-to-integrate FBAR filter embodiment 3 of the invention;
FIG. 5: is a schematic diagram of the three-dimensional structure of an easy-to-integrate FBAR filter embodiment 4 of the invention;
FIG. 6: is a top view of an easy-to-integrate FBAR filter embodiment 4 of the present invention;
FIG. 7: is a cross-sectional view of an easy-to-integrate FBAR filter embodiment 4 of the present invention;
FIG. 8: is a schematic diagram of the three-dimensional structure of an embodiment 5 of the FBAR filter easy to integrate of the present invention;
FIG. 9: is a top view of an easy-to-integrate FBAR filter embodiment 5 of the present invention;
FIG. 10: is a cross-sectional view of an embodiment 5 of an FBAR filter of the present invention that is easy to integrate;
FIG. 11: is a schematic diagram of the three-dimensional structure of an embodiment 6 of the FBAR filter easy to integrate of the present invention;
the filter comprises a mass load 1, a first upper electrode 2, a first piezoelectric layer 3, a first lower electrode 4, a supporting leg of a Bragg reflection layer structure 5, a first resonator 6, a second resonator 7, a filter 8, a first lower electrode led out 9, a second lower electrode led out 10, an 11-Si substrate, a first series FBAR 12, a second series FBAR 13, a third series FBAR 14, a fourth series FBAR 15, a first parallel FBAR 16, a second parallel FBAR 17, a third parallel FBAR 18, a fourth parallel FBAR 19, a first lower electrode and a second lower electrode led out 20, and a first upper electrode and a second upper electrode led out 21.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The following describes the embodiments of the present invention with reference to fig. 1 to 11:
an easy-to-integrate FBAR filter, the structure of which comprises: the resonator comprises supporting legs of a plurality of Bragg reflection layer structures, a first resonator and a second resonator; the first resonator and the second resonator share supporting legs of a plurality of Bragg reflection layer structures;
the first resonator and the second resonator are transversely arranged or longitudinally overlapped and arranged through supporting legs of a plurality of Bragg reflection layer structures;
the first resonator is formed by depositing a mass load, a first upper electrode, a first piezoelectric layer and a first lower electrode in sequence;
the second resonator is formed by sequentially depositing a second upper electrode, a second piezoelectric layer and a second lower electrode;
the first upper electrode and the second upper electrode are connected through supporting legs of a plurality of Bragg reflection layer structures;
the first piezoelectric layer and the second piezoelectric layer are connected through supporting legs of a plurality of Bragg reflection layer structures;
the first lower electrode is connected with the second lower electrode through supporting legs of a plurality of Bragg reflection layer structures;
in the FBAR filter easy to integrate, the supporting legs of the bragg reflection layer structure are formed by high acoustic impedance materials and low acoustic impedance materials which are transversely and alternately arranged, and the supporting legs of the bragg reflection layer structure are in a continuous curved surface pattern or a polygon;
fig. 1 is a schematic circuit diagram of an FBAR filter easy to integrate in the present invention, in which a band-pass filter is composed of four serially connected FBARs and four parallelly connected FBARs, the four serially connected FBARs are all the same, and the four parallelly connected FBARs are all the same.
In the embodiment of the invention, all the serially connected FBARs in the band-pass filter comprise supporting legs with an upper electrode, a piezoelectric film layer, a lower electrode and a Bragg reflection layer structure.
In the embodiment of the invention, all the FBARs connected in parallel in the band-pass filter comprise supporting legs of a mass load layer, an upper electrode, a piezoelectric film layer, a lower electrode and a Bragg reflection layer structure.
According to the working principle of the filter, the resonance frequency of the parallel FBARs is lower than that of the series FBARs, and the mass load plays a role in adjusting the resonance frequency of the FBARs.
Example 1
Fig. 2 shows an FBAR filter of this embodiment 1, which is easy to integrate, wherein a first resonator 6 and a second resonator 7 are coupled by two circular supporting legs 5, and the first resonator 6 and the second resonator 7 are disposed on a Si substrate 11.
Example 2
Fig. 3 shows an FBAR filter of this embodiment 2, which is easy to integrate, wherein the supporting legs for the first resonator 6 and the second resonator 7 are square (quadrilateral), and are connected through two supporting legs 5, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
Example 3
Fig. 4 shows an FBAR filter easy to integrate of this embodiment 3, wherein the supporting legs for the first resonator 6 and the second resonator 7 are circular and are connected by a supporting leg 5, the relative positions of the resonators can be adjusted according to actual requirements, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
Example 4
Fig. 5 shows an FBAR filter easy to integrate of this embodiment 4, in which the supporting legs for the first resonator 6 and the second resonator 7 are square, and are connected by one supporting leg 5, the relative positions of the resonators can be adjusted according to actual requirements, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
Fig. 6 is a top view of the FBAR filter of this embodiment 4, which is easy to integrate.
Fig. 7 is a cross-sectional view of an FBAR filter easy to integrate in this embodiment 4, where the first resonator 6 has the same multilayer structure from top to bottom: 1-mass load, 2-first upper electrode, 3-first piezoelectric layer, 4-first lower electrode, 5-supporting leg of Bragg reflection layer structure; the second resonator 7 has the same multilayer structure as the first resonator 6, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
Example 5
Fig. 8 shows an FBAR filter of this embodiment 5, which is easy to integrate, wherein the supporting legs for the first resonator 6 and the second resonator 7 are square, and are connected through the supporting legs 5, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
Fig. 9 is a top view of the FBAR filter of this embodiment 5, which is easy to integrate.
Fig. 10 is a cross-sectional view of an FBAR filter easy to integrate according to the embodiment 5, in which the first resonator 6 has the same multilayer structure from top to bottom: 1-mass load, 2-first upper electrode, 3-first piezoelectric layer, 4-first lower electrode, 5-supporting leg of Bragg reflection layer structure; the second resonator 7 has the same multilayer structure as the first resonator 6, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
Example 6
Fig. 11 shows an FBAR filter of this embodiment 6, which is easy to integrate, wherein the supporting legs for the first resonator 6 and the second resonator 7 are circular, and the relative positions of the resonators can be adjusted according to actual requirements by connecting the supporting legs 5, and the first resonator 6 and the second resonator 7 are disposed on the Si substrate 11.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (3)
1. An easy-to-integrate FBAR filter, comprising: the resonator comprises supporting legs of a plurality of Bragg reflection layer structures, a first resonator and a second resonator; the first resonator and the second resonator share supporting legs of a plurality of Bragg reflection layer structures;
the first resonator and the second resonator are transversely arranged or longitudinally overlapped and arranged through supporting legs of a plurality of Bragg reflection layer structures;
the second resonator is formed by sequentially depositing a second upper electrode, a second piezoelectric layer and a second lower electrode.
2. The easy-to-integrate FBAR filter of claim 1, wherein:
the first upper electrode and the second upper electrode are connected through supporting legs of a plurality of Bragg reflection layer structures;
the first piezoelectric layer and the second piezoelectric layer are connected through supporting legs of a plurality of Bragg reflection layer structures;
the first lower electrode and the second lower electrode are connected through supporting legs of a plurality of Bragg reflection layer structures.
3. The easy-to-integrate FBAR filter of claim 1, wherein:
the supporting legs of the Bragg reflection layer structure are formed by high-acoustic-impedance materials and low-acoustic-impedance materials which are transversely and alternately arranged, and the supporting legs of the Bragg reflection layer structure are in a continuous curved surface pattern or a polygon;
the shapes of the first resonator and the second resonator are continuous curved surface patterns and polygons.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110040803.XA CN112886940B (en) | 2021-01-13 | 2021-01-13 | FBAR filter easy to integrate |
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| CN202110040803.XA CN112886940B (en) | 2021-01-13 | 2021-01-13 | FBAR filter easy to integrate |
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| CN112886940B CN112886940B (en) | 2022-06-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113541638A (en) * | 2021-07-29 | 2021-10-22 | 绍兴汉天下微电子有限公司 | Filter, preparation method thereof and duplexer |
| CN114389561A (en) * | 2021-12-21 | 2022-04-22 | 无锡市好达电子股份有限公司 | Mixed structure acoustic wave device |
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| US20050099092A1 (en) * | 2003-11-07 | 2005-05-12 | Hiroyuki Nakamura | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
| EP1542362A1 (en) * | 2002-06-20 | 2005-06-15 | Ube Industries, Ltd. | Thin film piezoelectric oscillator, thin film piezoelectric device, and manufacturing method thereof |
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2021
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| EP1542362A1 (en) * | 2002-06-20 | 2005-06-15 | Ube Industries, Ltd. | Thin film piezoelectric oscillator, thin film piezoelectric device, and manufacturing method thereof |
| EP1482638A2 (en) * | 2003-05-29 | 2004-12-01 | Samsung Electronics Co., Ltd. | Film bulk acoustic resonator having supports and manufacturing method therefor |
| US20050099092A1 (en) * | 2003-11-07 | 2005-05-12 | Hiroyuki Nakamura | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113541638A (en) * | 2021-07-29 | 2021-10-22 | 绍兴汉天下微电子有限公司 | Filter, preparation method thereof and duplexer |
| CN114389561A (en) * | 2021-12-21 | 2022-04-22 | 无锡市好达电子股份有限公司 | Mixed structure acoustic wave device |
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| CN112886940B (en) | 2022-06-17 |
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Effective date of registration: 20220825 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee before: Ningbo Huazhang enterprise management partnership (L.P.) |