CN102571027A - Film bulk acoustic resonator structure based on all metal Bragg reflection layer - Google Patents
Film bulk acoustic resonator structure based on all metal Bragg reflection layer Download PDFInfo
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Abstract
The invention discloses a film bulk acoustic resonator (FBAR) structure based on an all metal Bragg reflection layer. The FBAR structure comprises a connecting antenna, an FBAR array duplexer or multiplexer, a low noise amplifier, an inhibition emitting signal filter, a receiving end attenuator, an emitting end attenuator and a power amplifier. The all metal Bragg reflection layer with excellent heat radiation capability is adopted, and the device heat sink is reduced, so the piezoelectric vibration heat energy can be effectively radiated from the all metal Bragg reflection layer and a substrate, the power capacitance of the FBAR filter is exponentially improved through the FBAR group structure in parallel connection, the same piezoelectric layer and the Bragg reflection layer are shared, the occurrence of device cracking condition caused by different heat impact and heat expansion factors is effectively reduced, finally, the power capacity of the filter based on the FBAR counting is integrally improved, and the characteristic of miniaturization of the FBAR filter is maintained. A whole wireless communication base station realizes the miniaturization.
Description
Technical field
The invention belongs to the communication equipment technical field, relate in particular to the miniaturization technologies of powerful radio communication base station radio-frequency module.
Technical background
In order to support high-speed data service, high power capacity will become one of principal character of radio communication base station; Simultaneously, along with the distribution of radio communication base station is more and more intensive, it will more be tending towards miniaturization and integrated design, and this just constantly impels filter base station radio-frequency front-end circuits such as (comprising duplexer) to be tending towards high power capacity, miniaturization and integrated.At present; In the equipment such as radio communication base station, active device can be realized integrated, microchipization, has only filter to comprise that multiplexer can not realize integrated microization; The median filter power capacity all requires bigger in the base station; So volume is all bigger, mainly be that cavity body filter is main at present, its power can reach hectowatt; Working medium filter in the equipment that also has, its average power can reach more than 5 watts.But volume is relatively large on the one hand for these two kinds of filters, can't be integrated in the chip of radio-frequency front-end on the other hand.Dwindle filter size and become the key issue of radio communication base station radio-frequency module miniaturization.
FBAR (being called for short FBAR) technology has overcome the defective that above-mentioned two kinds of filters exist well.The FBAR filter of making based on FBAR technology has that volume is little, operating frequency is high, temperature coefficient is little, loss is low and has and standard CMOS process advantage such as compatibility mutually.But FBAR filter power of the prior art is low, and the highest can only reaching about 3 watts obviously do not reach the requirement of equipment such as present radio communication base station.This patent proposes a kind of high-power FBAR radio-frequency filter that is specifically designed to radio communication base station; Promptly have high power capacity and have small volume again, should combine to form microminiaturized radio communication base station radio-frequency module with the base station radio transceiver by high-power FBAR filter.
Realize the radio communication base station radio-frequency module of high-power microminiaturization, key is radio-frequency filter (duplexer or multiplexer) microminiaturization, and the FBAR technology is microminiaturized key.FBAR has two macrostructures: use the FBAR and the FBAR that use Bragg reflecting layer structure of air-gap as acoustic reflecting layer; The former is because FBAR piezoelectric working heap is operated in above the air-gap; Structural instability; So power capacity is lower, the Bragg reflecting layer of the structure of whole solid state that the latter uses, structurally with the heat radiation angle all have very big power bearing capacity.J. people such as D. Larsen three generations be the Chinese patent No. 1 of " stacked bulk acoustic resonator of firm installation " at the invention title; 868; Announced a kind of FBAR based on Bragg reflecting layer in 119, this Bragg reflecting layer alternately is made up of plastics bragg layer and metal bragg layer.The United States Patent(USP) No. 6,107,721 of Lakin discloses a kind of FBAR device, and the Bragg reflecting layer in this device is made up of the alternating layer of silicon dioxide and non-piezoelectricity aluminium nitride.In addition, some commercial available FBAR devices comprise the acoustic reflection layer that the alternating layer by silicon dioxide and metal constitutes.Applicant Dong Shu honor paper " based on the research of the FBAR of Al-W assembly of thin films Bragg reflecting layer " in " TFC07 the whole nation thin film technique scientific seminar thesis summary set " has proposed the Bragg reflecting layer of aluminium-tungsten; But aluminium and tungsten difference of thermal expansion coefficients are big; Adhesion is low, so can only be fit to the FBAR of low power surface installing type (SMR).
Bragg reflecting layer can be with keeping apart well between FBAR and the substrate in the prior art; But the maximum power capabilities of FBAR device that had drawbacks limit: (1) since in the prior art Bragg reflecting layer thermal conductivity of materials such as plastics, silicon dioxide lower; The heat-sinking capability that has suppressed the FBAR device to a certain extent; (2) metal and nonmetal or plastics between adhesion low; Difference of thermal expansion coefficients is big, and under high-power operation, thermal shock repeatedly is easy to the component failure that is.(3) only use a FBAR can not significantly improve power capacity, single solid-state mount type FBAR power capacity is 3W at present, and general requirement the in base station is between the 10w-50w, so need significantly improve the FBAR power capacity.The FBAR power capacity of unit are has been fixed; Increase the FBAR work area, the FBAR power capacity that can be multiplied, but there is shortcoming in this method: increase the FBAR work area merely; The piezoelectric vibration peak of FBAR (generally being the center) amplitude strengthens; The shortcoming of solid-state mount type structure own causes the FBAR loss to double to increase, and causing Insertion Loss to increase and producing heat increases, and heat increases aggravation FBAR and reaches the operating temperature limit of itself rapidly.Can not significantly increase the FBAR power capacity at double so simply increase area.
The innovative point of this patent is to use the parallelly connected FBAR technology of integrated new construction; That is: do not increasing on the single FBAR area basis; Through a plurality of FBAR of parallel connection; And use some integrated new technologies on the FBAR structure, and comprise that the all-metal layer gets Bragg reflecting layer, shared piezoelectric layer and reflector technology etc., guarantee that FBAR Stability Analysis of Structures while power capacity can be multiplied.This high power FBAR group is applied to can realize the microminiaturization of module in the base station radio-frequency front-end module.
Summary of the invention
The present invention is directed to deficiency of the prior art, a kind of FBAR structure based on the all-metal Bragg reflecting layer is provided, effectively improved the heat-sinking capability of FBAR device, thereby improved its power capacity.Based on the required high power capacity FBAR array duplexer of this novel FBAR structural design, thereby be applied in the wireless base stations such as 3G and LTE.
In order to solve the problems of the technologies described above, the present invention is able to solve through following technical proposals:
Film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer; Comprise antenna, FBAR duplexer or multiplexer, low noise amplifier, inhibition transmit filter, receiving terminal attenuator, transmitting terminal attenuator, power amplifier one and power amplifier two; Antenna is connected on FBAR duplexer or the multiplexer; One end of FBAR duplexer or multiplexer is connected to an end of low noise amplifier; The other end of low noise amplifier is connected to an end of the filter that suppresses to transmit, and the other end of the filter that suppresses to transmit is connected to the receiving terminal attenuator.
As preferably: FBAR duplexer or multiplexer by a plurality of transmitting chains with receive link and form; Every road receives link or transmitting chain is made up of the FBAR set of devices more than three or three and one section 1/4th transmission line; Each FBAR set of devices is made up of a plurality of FBAR devices; Be connected to series, parallel or cross-coupled network configuration between FBAR device and the FBAR device; To realize filter function, each FBAR device is composed in parallel by two or more FBARs.
As preferably: FBAR comprises substrate, all-metal Bragg reflecting layer, bottom electrode, piezoelectric membrane, top electrode, is top electrode piezoelectric membrane, bottom electrode, all-metal Bragg reflecting layer and substrate from top to bottom.
As preferably: the all-metal Bragg reflecting layer is superimposed by acoustic impedance layer and low acoustic impedance layer and forms; Its total number of plies is the 4-8 layer; The nominal thickness of acoustic impedance layer and low acoustic impedance layer equals 1/4th of the wavelength of acoustical signal in the material of corresponding all-metal Bragg reflecting layer that frequency equates with the resonance frequency of this FBAR device; The material of acoustic impedance layer and low acoustic impedance layer has the thermal conductivity greater than 80 W/mK; The material of acoustic impedance layer is molybdenum, cadmium or ruthenium; The material of low acoustic impedance layer is aluminium or zinc, the acoustical signal that its medium frequency equates with the resonance frequency of this FBAR device, and 1/4th of the wavelength of this acoustical signal in the material of corresponding all-metal Bragg reflecting layer is exactly the nominal thickness of acoustic impedance layer and low acoustic impedance layer.
As preferably: shared all-metal Bragg reflecting layer of all FBARs and piezoelectric membrane in FBAR duplexer or the multiplexer.
As preferably: the nominal thickness of all-metal Bragg reflecting layer is the acoustical signal that equates with resonance frequency of frequency in 1/4th the odd of the material medium wavelength λ of this all-metal Bragg reflecting layer n; I.e. (2m+1) λ n/4; Wherein λ n is the wavelength of acoustical signal in the above-mentioned acoustical material; M is the integer more than or equal to zero, and this thickness allows to have with nominal thickness ± 10% error in the practical devices.
As preferably: FBAR duplexer or multiplexer are duplexer or the multiplexers of being processed by FBAR.
The present invention has adopted the outstanding all-metal Bragg reflecting layer structure of heat-sinking capability, has reduced the heat sink of device, and the heat energy of piezoelectric vibration can effectively be scattered and disappeared from all-metal Bragg reflecting layer and substrate; The FBAR group structure of parallel connection has significantly improved the power capacity of FBAR filter; Shared same piezoelectric layer and Prague total reflection layer, the inconsistent device cracking situation that causes of thermal shock and thermal coefficient of expansion that effectively reduces takes place; The final filter power capacity that has improved on the whole based on the FBAR counting, and kept the microminiaturized characteristics of FBAR filter.Whole radio communication base station has been realized microminiaturization.
Description of drawings
Fig. 1 is based on the microminiaturized base station radio frequency module block diagram of array FBAR technology.
In the array FBAR duplexer or multiplexer among Fig. 2 the present invention, the connected mode between the FBAR group.
FBAR organizes the layout structure between the inner FBAR among Fig. 3 the present invention.
FBAR organizes the layout sectional view between the inner FBAR among Fig. 4 the present invention.
The application of FBAR array micro base station counting in the LTE base station of Fig. 5 the present invention design.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is described in further detail.
Embodiment
Be illustrated in figure 1 as the radio communication base station radio-frequency module block diagram that the present invention is based on the FBAR technology; This radio communication base station 130 comprises successively the antenna 131, FBAR array duplexer 132, the low noise amplifier 133 that connect, suppresses to transmit filter 134, receiving terminal attenuator 135, and the transmitting terminal attenuator 138, power amplifier 1, the power amplifier 2 136 that connect successively.
Wherein, Described FBAR array duplexer 132 is as shown in Figure 2; This FBAR array duplexer 132 is by transmitting chain (Tx) and receive link (Rx) and forms, comprise antenna terminal 121, receive terminal 122, emission terminal 123, receive link series connection FBAR group 124, receive link parallel connection FBAR group 125, transmitting chain parallel connection FBAR group 126, transmitting chain series connection FBAR group 127 and 1/4th transmission lines 128 compositions.
In FBAR array duplexer 132 structures, each FBAR group 100 adopts four FBAR101,102,103 and 104 as shown in Figure 3 to compose in parallel, and above-mentioned four FBAR use identical thickness, area and structure.Shared same all-metal Bragg reflecting layer 109 of all FBAR and piezoelectric membrane 107 in the FBAR array duplexer 132.
FBAR device 100 comprises shown in Figure 4: top electrode 106, bottom electrode 105, piezoelectric membrane 107, spacer medium layer 108, all-metal Bragg reflecting layer 109 and substrate 112.Wherein all-metal Bragg reflecting layer 109 comprises the acoustic impedance layer 111 that contacts with substrate; Low acoustic impedance layer 110 with acoustic impedance layer 111 adjacency; Acoustic impedance layer 111 is alternately formed three layers with low acoustic impedance layer 110; Said acoustic impedance layer 111 all is a metallic film with low acoustic impedance layer 110, and they have the thermal conductivity greater than 80 W/mK, and wherein acoustic impedance layer 111 uses molybdenum (Mo), low acoustic impedance layer 110 to use aluminium (Al) to process.Bottom electrode 105 materials of FBAR device 101 adopt metallic gold (Au), and thickness is 0.1 μ m; Piezoelectric membrane 107 materials adopt aluminium nitride (AlN), and thickness is 2 μ m; Top electrode 105 materials adopt metallic gold (Au), and thickness is 0.1 μ m; Effective work area of FBAR device 101 is 200 μ m * 200 μ m; Low acoustic impedance layer 110 material adopt aluminium Al in the Bragg reflecting layer, and acoustic impedance layer 111 material adopt molybdenum Mo.The resonance frequency of FBAR device 101 is 1.782GHz among this embodiment; So the thickness of low acoustic impedance layer 110 metallic aluminium Al is 916nm (just in the metallic aluminium 1/4th of FBAR resonance frequency wavelength), the thickness of acoustic impedance layer 110 metal molybdenum is 872nm (just in the metal molybdenum 1/4th of FBAR resonance frequency wavelength).
The Bragg reflecting layer that replaces traditional structure with the all-metal Bragg reflecting layer among the present invention; Effectively improved the heat-sinking capability of FBAR device; Make the power capacity of FBAR device get a promotion; Based on the required FBAR array duplexer of the FBAR structural design among the present invention, and be applied to high-power applications occasions such as LTE base station 140 as shown in Figure 5.
Film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer; Comprise antenna 131, FBAR duplexer or multiplexer 132, low noise amplifier 133, suppress to transmit filter (134), receiving terminal attenuator 135, transmitting terminal attenuator 138, power amplifier 1 and power amplifier 2 137; Antenna 131 is connected on FBAR duplexer or the multiplexer 132; One end of FBAR duplexer or multiplexer 132 is connected to an end of low noise amplifier 133; The other end of low noise amplifier 133 is connected to an end of the filter 134 that suppresses to transmit, and the other end of the filter 134 that suppresses to transmit is connected to receiving terminal attenuator 135.
FBAR duplexer or multiplexer 132 are made up of a plurality of transmitting chains and reception link; Every road receives link or transmitting chain is made up of the FBAR set of devices 100 more than three or three and one section 1/4th transmission line 128; Each FBAR set of devices 100 is made up of a plurality of FBAR devices 101; Be connected to series, parallel or cross-coupled network configuration between FBAR device 101 and the FBAR device 101; To realize filter function, each FBAR device 101 is composed in parallel by two or more FBARs.
FBAR comprises substrate 112, all-metal Bragg reflecting layer 109, bottom electrode 105, piezoelectric membrane 107, top electrode 106, is top electrode 106, piezoelectric membrane 107, bottom electrode 105, all-metal Bragg reflecting layer 109 and substrate 112 from top to bottom.
All-metal Bragg reflecting layer 109 is superimposed by acoustic impedance layer 111 and low acoustic impedance layer 110 and forms; Its total number of plies is the 4-8 layer; The nominal thickness of acoustic impedance layer 111 and low acoustic impedance layer 110 equals 1/4th of the wavelength of acoustical signal in the material of corresponding all-metal Bragg reflecting layer 109 that frequency equates with the resonance frequency of this FBAR device 101; The material of acoustic impedance layer 111 and low acoustic impedance layer 110 has the thermal conductivity greater than 80 W/mK; The material of acoustic impedance layer 111 is molybdenum, cadmium or ruthenium, and the material of low acoustic impedance layer 110 is aluminium or zinc.
Shared all-metal Bragg reflecting layer 109 of all FBARs and piezoelectric membrane 107 in FBAR duplexer or the multiplexer 132.
The nominal thickness of all-metal Bragg reflecting layer 109 is acoustical signals of equating with resonance frequency of frequency in 1/4th the odd of the material medium wavelength λ of this all-metal Bragg reflecting layer 109 n.
FBAR duplexer or multiplexer 132 are duplexer or multiplexers of being processed by FBAR.
In a word, the above is merely preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (7)
1. based on the film bulk acoustic resonator structure of all-metal Bragg reflecting layer; It is characterized in that: comprise antenna (131), FBAR duplexer or multiplexer (132), low noise amplifier (133), suppress to transmit filter (134), receiving terminal attenuator (135), transmitting terminal attenuator (138), power amplifier one (136) and power amplifier two (137); Antenna (131) is connected on FBAR duplexer or the multiplexer (132); One end of FBAR duplexer or multiplexer (132) is connected to an end of low noise amplifier (133); The other end of low noise amplifier (133) is connected to an end of the filter (134) that suppresses to transmit, and the other end of the filter (134) that suppresses to transmit is connected to receiving terminal attenuator (135).
2. the film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer according to claim 1; It is characterized in that: FBAR duplexer or multiplexer (132) are made up of a plurality of transmitting chains and reception link; Every road receives link or transmitting chain is made up of the FBAR set of devices (100) more than three or three and one section 1/4th transmission line (128); Each FBAR set of devices (100) is made up of a plurality of FBAR devices (101); Be connected to series, parallel or cross-coupled network configuration between FBAR device (101) and the FBAR device (101); To realize filter function, each FBAR device (101) is composed in parallel by two or more FBARs.
3. the film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer according to claim 2; It is characterized in that: FBAR comprises substrate (112), all-metal Bragg reflecting layer (109), bottom electrode (105), piezoelectric membrane (107), top electrode (106), is top electrode (106), piezoelectric membrane (107), bottom electrode (105), all-metal Bragg reflecting layer (109) and substrate (112) from top to bottom.
4. the film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer according to claim 3; It is characterized in that: all-metal Bragg reflecting layer (109) is superimposed by acoustic impedance layer (111) and low acoustic impedance layer (110) and forms; Its total number of plies is the 4-8 layer; The nominal thickness of acoustic impedance layer (111) and low acoustic impedance layer (110) equals 1/4th of the wavelength of acoustical signal in the material of corresponding all-metal Bragg reflecting layer (109) that frequency equates with the resonance frequency of this FBAR device (101); The material of acoustic impedance layer (111) and low acoustic impedance layer (110) has the thermal conductivity greater than 80 W/mK; The material of acoustic impedance layer (111) is molybdenum, cadmium or ruthenium, and the material of low acoustic impedance layer (110) is aluminium or zinc.
5. the film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer according to claim 4 is characterized in that: shared all-metal Bragg reflecting layers of all FBARs (109) and piezoelectric membrane (107) in described FBAR duplexer or the multiplexer (132).
6. the film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer according to claim 4 is characterized in that: the nominal thickness of said all-metal Bragg reflecting layer (109) is the acoustical signal that equates with resonance frequency of frequency in 1/4th the odd of the material medium wavelength λ of this all-metal Bragg reflecting layer (109) n.
7. the film bulk acoustic resonator structure based on the all-metal Bragg reflecting layer according to claim 1 is characterized in that: FBAR duplexer or multiplexer (132) are duplexer or the multiplexers of being processed by FBAR.
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Cited By (9)
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| CN107005220A (en) * | 2014-11-25 | 2017-08-01 | 追踪有限公司 | BAW resonators, the high frequency filter with BAW resonators, the duplexer with high frequency filter and the manufacture method of self-heating reduction |
| CN108449066A (en) * | 2018-05-14 | 2018-08-24 | 杭州左蓝微电子技术有限公司 | A kind of SAW resonator and its manufacturing method based on solid reflecting layer |
| CN108604892A (en) * | 2015-11-24 | 2018-09-28 | 追踪有限公司 | Electric components with heat dissipation |
| CN111575661A (en) * | 2020-04-07 | 2020-08-25 | 上海大学 | Method for improving return loss and Q value of SMR device |
| CN111669144A (en) * | 2020-05-06 | 2020-09-15 | 河源市众拓光电科技有限公司 | BAW bulk acoustic wave resonator, preparation method thereof and filter |
| CN112886940A (en) * | 2021-01-13 | 2021-06-01 | 武汉大学 | FBAR filter easy to integrate |
| CN113381721A (en) * | 2021-05-06 | 2021-09-10 | 偲百创(深圳)科技有限公司 | Piezoelectric transducer manufacturing method and piezoelectric transducer |
| CN113965182A (en) * | 2021-12-23 | 2022-01-21 | 深圳新声半导体有限公司 | Method and structure for improving preparation yield of bulk acoustic wave filter |
| CN114362712A (en) * | 2022-03-21 | 2022-04-15 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method of forming the same |
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| CN107005220A (en) * | 2014-11-25 | 2017-08-01 | 追踪有限公司 | BAW resonators, the high frequency filter with BAW resonators, the duplexer with high frequency filter and the manufacture method of self-heating reduction |
| CN108604892A (en) * | 2015-11-24 | 2018-09-28 | 追踪有限公司 | Electric components with heat dissipation |
| CN108449066A (en) * | 2018-05-14 | 2018-08-24 | 杭州左蓝微电子技术有限公司 | A kind of SAW resonator and its manufacturing method based on solid reflecting layer |
| CN108449066B (en) * | 2018-05-14 | 2024-02-27 | 杭州左蓝微电子技术有限公司 | Surface acoustic wave resonator based on solid reflecting layer and manufacturing method thereof |
| CN111575661B (en) * | 2020-04-07 | 2022-08-05 | 上海大学 | Method for improving return loss and Q value of SMR device |
| CN111575661A (en) * | 2020-04-07 | 2020-08-25 | 上海大学 | Method for improving return loss and Q value of SMR device |
| CN111669144A (en) * | 2020-05-06 | 2020-09-15 | 河源市众拓光电科技有限公司 | BAW bulk acoustic wave resonator, preparation method thereof and filter |
| CN111669144B (en) * | 2020-05-06 | 2023-09-22 | 广州市艾佛光通科技有限公司 | BAW bulk acoustic wave resonator, preparation method thereof and filter |
| CN112886940A (en) * | 2021-01-13 | 2021-06-01 | 武汉大学 | FBAR filter easy to integrate |
| CN113381721A (en) * | 2021-05-06 | 2021-09-10 | 偲百创(深圳)科技有限公司 | Piezoelectric transducer manufacturing method and piezoelectric transducer |
| CN113381721B (en) * | 2021-05-06 | 2023-08-08 | 偲百创(深圳)科技有限公司 | Piezoelectric transducer manufacturing method and piezoelectric transducer |
| CN113965182A (en) * | 2021-12-23 | 2022-01-21 | 深圳新声半导体有限公司 | Method and structure for improving preparation yield of bulk acoustic wave filter |
| CN114362712A (en) * | 2022-03-21 | 2022-04-15 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method of forming the same |
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