CN102545827A - Thin film acoustic resonator, communication device and radio frequency module - Google Patents
Thin film acoustic resonator, communication device and radio frequency module Download PDFInfo
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- CN102545827A CN102545827A CN2012100008165A CN201210000816A CN102545827A CN 102545827 A CN102545827 A CN 102545827A CN 2012100008165 A CN2012100008165 A CN 2012100008165A CN 201210000816 A CN201210000816 A CN 201210000816A CN 102545827 A CN102545827 A CN 102545827A
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- 238000004891 communication Methods 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012528 membrane Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a thin film acoustic resonator, a communication device and a radio frequency module. The thin film acoustic resonator comprises a substrate; a lower electrode layer, a piezoelectric film and an upper electrode layer are sequentially arranged on the substrate; and two or more air gaps are laminated between the substrate and the lower electrode layer. According to the thin film acoustic resonator which is provided by the embodiment of the invention, the power capacity is higher, simultaneously the volume is smaller, the structure is stable, and the thin film acoustic resonator is applicable to the application with high-power capacity requirement.
Description
Technical field
The embodiment of the invention relates to resonator technologies, relates in particular to a kind of FBAR, communication device and radio-frequency module.
Background technology
Along with development of wireless communication devices, integrated and miniaturization have become the development trend of wireless radio frequency modules, and integrated, the miniaturization and the high power of the filter in the radio-frequency module front-end circuit then become very crucial.Because FBAR (Film Bulk Acoustic Resonator; FBAR) have that volume is little, operating frequency is high and be convenient to advantages such as integrated, the filter of being made up of FBAR has been widely used in the radio communication device technical field.
Fig. 1 is the structural representation of existing air-gap structure FBAR.As shown in Figure 1; Among the existing air-gap structure FBAR, in the piezoelectricity sandwich structure of being made up of top electrode 101, piezoelectric membrane 102, bottom electrode 103, this piezoelectricity sandwich structure is arranged on the substrate 104; And on substrate 104, be formed with air-gap 105; During FBAR work, 105 couples of FBAR of air-gap capable of using carry out sound wave to be isolated, and guarantees the service behaviour of FBAR.Because FBAR relies on the up-down vibration of piezoelectricity sandwich structure to carry out work; In the FBAR course of work; Can produce stress in the edge of air-gap and concentrate (position shown in Fig. 1 dotted line), and along with the power of the work of FBAR is big more, the vibration of piezoelectric membrane is just strong more; The stress that stress raiser produces will be big more; When the stress that produces surpasses the stress bearing strength of bottom electrode, piezoelectric membrane and top electrode, will cause the piezoelectricity sandwich structure of FBAR to subside or break, FBAR can't operate as normal.In addition; Generally increase the power capacity of FBAR in the prior art through the area that increases FBAR structure hollow air gap; But after FBAR hollow air gap area increases to a certain degree; It is unstable more that the FBAR structure will become, and the power capacity of FBAR can not increase on the contrary, the trend of stress decrease also can occur.
To sum up, among the existing air-gap structure FBAR, because air-gap edge stress concentration problem causes the power capacity of FBAR limited, the FBAR power capacity is lower; And simple through increasing the area of the air-gap in the FBAR structure, after the air-gap area acquired a certain degree, it is unstable more that the FBAR structure will become, and the power capacity of FBAR can not increase on the contrary, the opposite problem that also can the emergent power capacity descends.
Summary of the invention
The embodiment of the invention provides a kind of FBAR, communication device and radio-frequency module; It is excessive and cause the lower problem of power capacity effectively to overcome the air-gap stress that exists in the existing FBAR structure; Can on the basis of improving the FBAR power capacity, reduce problem of stress concentration.
The embodiment of the invention provides a kind of FBAR, comprising: substrate, and lower electrode layer, piezoelectric membrane and upper electrode layer have been cascading on the said substrate;
Be provided with the air-gap more than 2 or 2 between said substrate and the lower electrode layer.
The embodiment of the invention provides a kind of communication device, comprises the FBAR that the invention described above embodiment provides.
The embodiment of the invention provides a kind of radio-frequency module, comprises duplexer or multiplexer, the FBAR of the resonator in said duplexer or the multiplexer for adopting the invention described above embodiment to provide
The FBAR that present embodiment provides, communication device and radio-frequency module; FBAR has a plurality of air-gap structures, and the shared identical upper electrode layer of each air-gap, piezoelectric membrane and lower electrode layer, like this; During FBAR work; The vibration that piezoelectric membrane produces will be distributed on each air-gap structure, and the stress that makes each air-gap structure edge produce is all less, can effectively improve the stability and the reliability of whole film bulk acoustic resonator structure; Simultaneously; Because the shared upper electrode layer of each air-gap, piezoelectric membrane lower electrode layer; The power of FBAR is exactly the power sum that the corresponding piezoelectric membrane zone of each air-gap produces; Make FBAR integral body can have higher power capacity, satisfy in the FBAR application of high-power demand; In addition, have the power circuit of equal-wattage capacity with respect to tradition, the FBAR that present embodiment provides has littler volume and structural stability.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do one to the accompanying drawing of required use in embodiment or the description of the Prior Art below introduces simply; Obviously, the accompanying drawing in describing below is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of existing air-gap structure FBAR;
Fig. 2 A is the film bulk acoustic resonator structure sketch map that the embodiment of the invention one provides;
Fig. 2 B be among Fig. 2 A A-A to shown in the structural representation of air-gap;
The structural representation of the FBAR hollow air gap that Fig. 3 provides for the embodiment of the invention two;
The structural representation of the FBAR that Fig. 4 provides for the embodiment of the invention three;
Fig. 5 A is the structural representation of the radio-frequency module that provides of the embodiment of the invention four;
Fig. 5 B is the structural representation of duplexer among Fig. 5 A.
Embodiment
For making the object of the invention, technical scheme and advantage clearer; To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention carried out clear, intactly description, obviously; Described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, the every other embodiment that those of ordinary skills are obtained under the prerequisite of not making creative work belongs to the scope that the present invention protects.
Fig. 2 A is the film bulk acoustic resonator structure sketch map that the embodiment of the invention one provides; Fig. 2 B be among Fig. 2 A A-A to shown in the structural representation of air-gap.Shown in Fig. 2 A, present embodiment FBAR comprises substrate 11, and lower electrode layer 12, piezoelectric membrane 13 and upper electrode layer 14 have been cascading on this substrate 11; Between substrate 11 and lower electrode layer 12, also be provided with the air-gap 15 more than 2 or 2.In the FBAR structure that present embodiment provides; Shared upper electrode layer of a plurality of air-gaps and lower electrode layer; During FBAR work, piezoelectric membrane produces vibration at each air-gap place respectively, thereby can the stress that the piezoelectric membrane vibration produces be distributed to the edge of each air-gap; The stress that makes each air-gap edge produce will be very little, thereby can effectively improve whole FBAR stability of structure; Simultaneously, a plurality of air-gap common electrode layers, it is bigger that the air-gap entire area can be done, and makes FBAR can work in more under the high power environment, can effectively improve the power capacity of FBAR.
In the present embodiment, shown in Fig. 2 A and Fig. 2 B, can be provided with a plurality of obstacles 151 on the substrate 11, form each air-gap 15 thereby can surround through these a plurality of obstacles 151.In the practical application; Can as required the obstacle of suitable width be set, the 1/3-2 that for example can the obstacle width be set to piezoelectric membrane thickness doubly between; So that during the FABR that forms work; In the edge of air-gap, can have stress ability to bear better, increase FBAR stability of structure and reliability.
In the present embodiment; Shown in Fig. 2 A, between lower electrode layer 12 and each air-gap 15, also be provided with supporting layer 16, so that improve whole FBAR stability of structure through this supporting layer 16; Increase the mechanical strength of air-gap 15 edges, improve the stress ability to bear of each air-gap 15 edge.
In the present embodiment, the air-gap 15 that is formed on the substrate 11 can be square structure, for example can be square, rectangle structure.Particularly, shown in Fig. 2 B, each air-gap 15 in the present embodiment is a rectangle structure, and the breadth length ratio of this rectangle structure can be 1: 1-1: between 1.5.
In the present embodiment, be formed between each air-gap 15 on the substrate 11 and also can be provided with via hole, particularly; Shown in Fig. 2 B, on the obstacle between the adjacent air-gap 15 151, can offer via hole 152, make conducting between two adjacent air-gaps 15; Like this, in FBAR manufacturing process, can be convenient in the etching technics etching gas or liquid and between each air-gap, flow; Wherein, Via hole 152 can be the centre position of place obstacle 151, and the width of via hole can be the 1/5-1/3 of obstacle length, avoids via size excessive and influence the FBAR service behaviour.
It will be appreciated by those skilled in the art that; Above-mentioned is provided with lower electrode layer 12, piezoelectric membrane 13 and upper electrode layer 14 in substrate 11 laminated; Be meant on the surface of substrate 11 and on vertically should the direction on surface, set gradually lower electrode layer 12, piezoelectric membrane 13 and upper electrode layer 14.
It will be understood by those skilled in the art that FBAR that present embodiment provides on circuit function, can be equivalent to a plurality of traditional F BAR parallel connections, so present embodiment FBAR can have the power capacity of traditional F BAR cost, make the FBAR capacity be greatly improved; Simultaneously; In the FBAR structure that present embodiment provides, the shared upper electrode layer of a plurality of air-gaps, piezoelectric membrane and lower electrode layer make the FBAR Stability Analysis of Structures; The power circuit of a plurality of relatively traditional F BAR; On the basis that reaches the equal-wattage capacity, can have littler volume, make and use the communication device of present embodiment FBAR can have littler volume and the power capacity of Geng Gao.
The FBAR that present embodiment provides; Have a plurality of air-gap structures, the shared identical upper electrode layer of each air-gap, piezoelectric membrane and lower electrode layer, like this; During FBAR work; The vibration that piezoelectric membrane produces will be distributed on each air-gap structure, and the stress that makes each air-gap structure edge produce is all less, can effectively improve whole FBAR stability of structure and reliability; Simultaneously; Because the shared upper electrode layer of each air-gap, piezoelectric membrane lower electrode layer; The power of FBAR is exactly the power sum that the corresponding piezoelectric membrane zone of each air-gap produces, and makes FBAR integral body can have higher power capacity, satisfies in the FBAR application of high-power demand.
The structural representation of the FBAR hollow air gap that Fig. 3 provides for the embodiment of the invention two.Different with Fig. 2 B illustrated embodiment technical scheme with above-mentioned Fig. 2 A is; The air-gap that is formed in the present embodiment on the substrate can be polygonized structure, for example can be pentagon, hexagon, perhaps; Also can be the regular polygon structure; Particularly, as shown in Figure 3, present embodiment hollow air gap 15 is a hexagonal structure.
The structural representation of the FBAR that Fig. 4 provides for the embodiment of the invention three.Different with above-mentioned Fig. 2 A illustrated embodiment technical scheme is that present embodiment hollow air gap can be the groove structure that is arranged on the substrate, and is as shown in Figure 4 particularly, offers the groove structure more than 2 or 2 on the substrate 11, this groove structure formation air-gap 15.
Form required air-gap through the mode that groove is set on substrate, can effectively improve the convenience that FBAR makes, reduce cost of manufacture.
It will be appreciated by those skilled in the art that; Among above-mentioned each embodiment of the present invention, the structure of air-gap is except can being the regular structures such as said square, polygon, in the practical application; Also can as required air-gap be set to other irregular shapes; The structure that perhaps multiple shape combines does not limit this embodiment of the invention
The embodiment of the invention also provides a kind of communication device; This communication device can comprise the FBAR that the invention described above embodiment provides; Particularly; This communication device can be filter, duplexer or oscillator, can be connected to form through series, parallel by the FBAR that the invention described above provides, and perhaps is formed by connecting through series connection and parallelly connected combination.Have higher power capacity owing to form the FBAR of this communication device, can reduce the usage quantity of resonator in the communication device accordingly, improve the power capacity of communication device; Simultaneously, in the present embodiment communication device, FBAR can be equivalent to the FBAR of a plurality of parallel connections in the traditional devices, on the basis of the FBAR power capacity with traditional a plurality of parallel connections, also can reduce the volume of whole communication device.
A kind of radio-frequency module also is provided in the embodiment of the invention, and this radio-frequency module comprises duplexer or multiplexer, and the FBAR of the resonator in duplexer or the multiplexer for adopting the invention described above embodiment to provide.To be example with radio-frequency module in the radio communication base station below, embodiment of the invention technical scheme will be described.
Fig. 5 A is the structural representation of the radio-frequency module that provides of the embodiment of the invention four; Fig. 5 B is the structural representation of duplexer among Fig. 5 A.The present embodiment radio-frequency module can be applicable to the 3G (Third Generation) Moblie technology (3rd-generation, 3G) and Long Term Evolution (Long Term Evolution is in the wireless base station that LTE) waits; Can satisfy the high power requirements of wireless base station, can have littler volume simultaneously, particularly; Shown in Fig. 5 A; The present embodiment radio-frequency module can comprise duplexer 10, and this duplexer 10 is connected with RF receiving circuit 20, radio-frequency transmissions circuit 30 and antenna 40 respectively, when receiving signal; The signal that receives from antenna 40 can pass through duplexer 10 handle with RF receiving circuit 20 after, transfer to the relevant base station signal processor; When transmitting, the signal that the base station signal processing unit sends after can passing through radio-frequency transmissions circuit 30 and handling with duplexer 10, is launched from antenna 40.
In the present embodiment; Shown in Fig. 5 A; Above-mentioned RF receiving circuit 20 can comprise receiving terminal attenuator 201, signal suppressing filter 202 and the low noise amplifier 203 that is electrically connected successively; This low noise amplifier 203 is connected with duplexer 10, and receiving terminal attenuator 201 is connected with signal processor in the base station; Radio-frequency transmissions circuit 30 can comprise that successively the transmitting terminal attenuator 301, first power amplifier 302 and second power amplifier, 303, the second power amplifiers 303 that are electrically connected are connected with duplexer 10, and transmitting terminal attenuator 301 is connected with signal processor in the base station.In the present embodiment RF receiving circuit and radio-frequency transmissions circuit can have with the traditional base station in the identical or similar structure of radio-frequency module, the embodiment of the invention does not limit.
In the present embodiment, the FBAR that the resonator in the above-mentioned duplexer 10 can adopt the invention described above embodiment to provide.Shown in Fig. 5 B; Duplexer 10 is made up of transmitting chain 110, reception link 120, antenna terminal 130 and 1/4th transmission lines 140; Wherein, transmitting chain 110 forms with receiving FBAR 140 series connection that provide by the invention described above embodiment in the link 120 and being connected in parallel.In the practical application, can as required each FBAR be constituted T type, л type, Γ type or network chiasma type structural circuit, to realize the logical or band resistance characteristic of required band.It will be understood by those skilled in the art that the duplexer in the present embodiment can adopt the conventional circuit structure form, is the FBAR that resonator wherein adopts the invention described above embodiment to provide; In addition, above-mentioned FBAR can be equivalent to traditional a plurality of FBAR and be formed in parallel, and therefore can the FBAR that present embodiment provides be replaced a plurality of FBAR of parallel connection in the traditional circuit as required, and can have identical power, and volume is littler.
What should explain at last is: above each embodiment is only in order to explaining technical scheme of the present invention, but not to its restriction; Although the present invention has been carried out detailed explanation with reference to aforementioned each embodiment; Those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, perhaps to wherein part or all technical characteristic are equal to replacement; And these are revised or replacement, do not make the scope of the essence disengaging various embodiments of the present invention technical scheme of relevant art scheme.
Claims (12)
1. a FBAR is characterized in that, comprising: substrate, and lower electrode layer, piezoelectric membrane and upper electrode layer have been cascading on the said substrate;
Be provided with the air-gap more than 2 or 2 between said substrate and the lower electrode layer.
2. FBAR according to claim 1 is characterized in that, is provided with a plurality of obstacles between said substrate and the lower electrode layer, and said a plurality of obstacles surround and form said each air-gap.
3. FBAR according to claim 1 is characterized in that, offers the groove structure more than 2 or 2 on the said substrate, the said air-gap that said groove structure forms.
4. according to claim 2 or 3 described FBARs, it is characterized in that, be provided with via hole between each air-gap.
5. according to claim 1,2 or 3 described FBARs, it is characterized in that said air-gap is a polygonized structure.
6. FBAR according to claim 5 is characterized in that, said air-gap is the regular polygon structure.
7. according to claim 1,2 or 3 described FBARs, it is characterized in that said air-gap is a square structure.
8. FBAR according to claim 7 is characterized in that, said air-gap is that breadth length ratio is 1: 1～1: 5 a rectangle structure.
9. according to claim 1,2 or 3 described FBARs, it is characterized in that, also be provided with supporting layer between said lower electrode layer and each air-gap.
10. a communication device is characterized in that, comprises aforesaid right requirement 1～9 arbitrary described FBAR.
11. communication device according to claim 10 is characterized in that, said communication device is filter, duplexer or oscillator.
12. a radio-frequency module comprises duplexer or multiplexer, it is characterized in that, the resonator in said duplexer or the multiplexer requires the arbitrary described FBAR of 1-9 for adopting aforesaid right.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210000816.5A CN102545827B (en) | 2012-01-04 | 2012-01-04 | Thin film bulk acoustic resonator, communication device and radio-frequency module |
| PCT/CN2012/078036 WO2013102342A1 (en) | 2012-01-04 | 2012-07-02 | Film bulk acoustic resonator, communication device and radio frequency module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210000816.5A CN102545827B (en) | 2012-01-04 | 2012-01-04 | Thin film bulk acoustic resonator, communication device and radio-frequency module |
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| CN102545827A true CN102545827A (en) | 2012-07-04 |
| CN102545827B CN102545827B (en) | 2015-09-09 |
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| CN102571027A (en) * | 2012-02-27 | 2012-07-11 | 浙江瑞能通信科技有限公司 | Film bulk acoustic resonator structure based on all metal Bragg reflection layer |
| CN103532516A (en) * | 2013-08-05 | 2014-01-22 | 天津大学 | Bulk wave resonator and manufacturing method thereof |
| CN107332561A (en) * | 2017-07-18 | 2017-11-07 | 上海示方科技有限公司 | A kind of signal inquires after device, Hydrogen Atom Frequency Standard |
| CN108649920A (en) * | 2017-12-29 | 2018-10-12 | 贵州中科汉天下微电子有限公司 | Piezoelectric acoustic wave resonator, piezoelectric acoustic-wave filter, duplexer and radio-frequency communication module |
| WO2018214321A1 (en) * | 2017-05-22 | 2018-11-29 | 歌尔股份有限公司 | Piezoelectric microphone |
| CN108964628A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
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| CN102571027A (en) * | 2012-02-27 | 2012-07-11 | 浙江瑞能通信科技有限公司 | Film bulk acoustic resonator structure based on all metal Bragg reflection layer |
| CN103532516A (en) * | 2013-08-05 | 2014-01-22 | 天津大学 | Bulk wave resonator and manufacturing method thereof |
| CN108964628A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
| WO2018214321A1 (en) * | 2017-05-22 | 2018-11-29 | 歌尔股份有限公司 | Piezoelectric microphone |
| US10382870B2 (en) | 2017-05-22 | 2019-08-13 | Goertek Inc. | Piezoelectric microphone |
| CN107332561A (en) * | 2017-07-18 | 2017-11-07 | 上海示方科技有限公司 | A kind of signal inquires after device, Hydrogen Atom Frequency Standard |
| CN108649920A (en) * | 2017-12-29 | 2018-10-12 | 贵州中科汉天下微电子有限公司 | Piezoelectric acoustic wave resonator, piezoelectric acoustic-wave filter, duplexer and radio-frequency communication module |
| CN109302158A (en) * | 2018-08-01 | 2019-02-01 | 河源市众拓光电科技有限公司 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
| CN109302158B (en) * | 2018-08-01 | 2021-07-16 | 广州市艾佛光通科技有限公司 | Film bulk acoustic resonator and preparation method thereof |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| WO2020252962A1 (en) * | 2019-06-20 | 2020-12-24 | 杭州左蓝微电子技术有限公司 | Acoustic wave device, and preparation method therefor and temperature control method thereof |
| CN110971209A (en) * | 2019-11-04 | 2020-04-07 | 天津大学 | Method for improving power capacity of bulk acoustic wave filter and filter element |
| CN110971209B (en) * | 2019-11-04 | 2023-10-20 | 天津大学 | Method for improving power capacity of bulk acoustic wave filter and filter element |
| CN112039489A (en) * | 2020-01-22 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Thin film piezoelectric acoustic wave filter and manufacturing method thereof |
| CN112039489B (en) * | 2020-01-22 | 2022-08-05 | 中芯集成电路（宁波）有限公司 | Thin film piezoelectric acoustic wave filter and manufacturing method thereof |
| CN112039491A (en) * | 2020-03-31 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Thin film piezoelectric acoustic wave filter and manufacturing method thereof |
| CN112039491B (en) * | 2020-03-31 | 2022-08-05 | 中芯集成电路（宁波）有限公司 | Thin film piezoelectric acoustic wave filter and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013102342A1 (en) | 2013-07-11 |
| CN102545827B (en) | 2015-09-09 |
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