CN103532516A - Bulk wave resonator and manufacturing method thereof - Google Patents
Bulk wave resonator and manufacturing method thereof Download PDFInfo
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- CN103532516A CN103532516A CN201310337329.2A CN201310337329A CN103532516A CN 103532516 A CN103532516 A CN 103532516A CN 201310337329 A CN201310337329 A CN 201310337329A CN 103532516 A CN103532516 A CN 103532516A
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Abstract
The invention discloses a piezoelectric bulk wave resonator and a manufacturing method thereof. The piezoelectric bulk wave resonator comprises a multilayer structure and a substrate, wherein at least one groove is arranged in the surface of the substrate, the multilayer structure covers the at least one groove, and an acoustic reflection structure of the piezoelectric bulk wave resonator is formed by at least one formed cavity; the multilayer structure is sunken to the bottom of the cavity in each cavity and is not in contact with the bottom of the cavity; or the multilayer structure is raised in a direction which is far away from the bottom of the cavity, and the raised height is greater than or equal to the predetermined raised height. According to the invention, through controlling the downwards sunken degree and the upwards raised height of the multilayer film structure in the piezoelectric bulk wave resonator, good air reflection interfaces are arranged on the upper side and the lower side of the multilayer film structure of the piezoelectric bulk wave resonator, so that a good reflection effect of bulk acoustic wave is ensured, and a value Q is at a high level.
Description
Technical field
The present invention relates to semiconductor applications, and especially, relate to a kind of piezoelectrics wave resonator and manufacture method thereof.
Background technology
Utilize piezoceramic multilayer membrane structure at the made multi-layer film structure piezoelectrics wave resonator of longitudinal resonance of thickness direction, at aspects such as mobile communication and high-speed serial data application, become a viable option of SAW (Surface Acoustic Wave) device and quartz-crystal resonator.Radio-frequency front-end bulk acoustic wave piezoelectric filter/duplexer provides superior filtering characteristic, such as low insertion loss, precipitous transition band, larger power capacity, stronger anti-electrostatic discharging (ESD) ability etc.
High-frequency multilayer membrane structure piezoelectrics wave oscillator has ULF temperature drift, and its advantage is: phase noise is low, low in energy consumption and bandwidth modulation scope is large.In addition, these miniature piezoelectric body wave resonators can be used the processing technology that CMOS (Complementary Metal Oxide Semiconductor) (CMOS) is compatible on silicon substrate, to reduce unit cost, and are conducive to final and cmos circuit is integrated.
Typical piezoelectrics wave resonator comprises two metal electrodes, the piezoelectric between upper/lower electrode, be positioned at the sound reflecting structure below hearth electrode and be positioned at the substrate below sound reflecting structure.Conventionally by top electrode, piezoelectric layer, the bottom electrode trilaminate material effective coverage that overlapping zone definitions is resonator on thickness direction.When applying the voltage signal of certain frequency between electrode, the inverse piezoelectric effect having due to piezoelectric, between upper/lower electrode in effective coverage, can produce the sound wave that vertical direction is propagated, sound wave carrys out back reflective and produce resonance under certain frequency between the interface of top electrode and air and the sound reflecting structure under hearth electrode.Q value be the gross energy that stores of resonator and resonator due to the ratio of the energy of various approach losses, the acoustic reflection efficiency acoustic energy that more Gao Ze lets out from resonator is less, the Q value of resonator is higher.The lifting of Q value contributes to improve usings piezo-electric resonator as the logical stopband characteristic of the filter of elementary cell, can guarantee the performance of multi-layer film structure piezoelectric filter.
In order to make sound wave form good reflecting effect between upper/lower electrode, conventionally the effective area of resonator is formed on the substrate with cavity structure as shown in Figure 1.Multi-layer film structure piezoelectrics wave resonator as shown in Figure 1 comprises: two metal electrode T and B, the piezoelectric P between upper/lower electrode, be positioned at the sacrifice layer PSG below hearth electrode and be positioned at the substrate S below sacrifice layer PSG.Because the acoustic impedance ratio between air and hearth electrode is very large, can there is fabulous reflection in sound wave on the interface of hearth electrode and air.In order to guarantee that minimum sound wave reveals, need to make the projection in vertical direction of the effective coverage that forms be positioned at the cavity area of substrate as far as possible.
A kind of step of making the way of cavity sound reflecting structure can comprise:
Step 1, in substrate S, etch cavity structure;
Step 2, with sacrificial layer material cavity filling structure;
Step 4, remove sacrifice layer and form suspension structure.
After removing sacrifice layer, in piezoelectrics wave resonator as shown in Figure 2, multi-layer film structure M(comprises hearth electrode B, piezoelectric layer P and top electrode T) tend to produce deformation.A kind of deformation situation is: multi-layer film structure M depression also very approaches and even occurs directly to contact with the bottom C of cavity structure.Because bulk acoustic wave will be much smaller than the interface of hearth electrode and air in the part reflection efficiency of hearth electrode and substrate contact, therefore acoustic wave energy can leak out from the place of multi-layer film structure and substrate contact, and the area that hearth electrode and cavity bottom come in contact is larger, and energy leakage is more serious.Therefore caused the especially reduction of the Q value at parallel resonance frequency place of Q value of multi-layer film structure resonator.
As shown in Figure 3, another kind of deformation situation is: in piezoelectrics wave resonator, multi-layer film structure M is to cavity outer projection, under these circumstances, when needs are added a cover encapsulation wafer for resonator and filter, the multi-layer film structure of projection very possible with encapsulation wafer (also referred to as, lid, Cap) contact, the same like this sound wave that can not make obtains good reflection, thereby causes the Q value of multi-layer film structure resonator to reduce.Performance when resonator out of Practical manufacturing and filter are often difficult to reach its design like this.
In the filter forming being connected by a plurality of piezoelectrics wave resonators, owing to need to adopting the resonator of different frequency impedance behavior, conventionally in design, need the resonator with different effective coverages size to be arranged together.Under same multi-layer film structure growth conditions, the area of cavity is larger, multi-layer film structure more easily produces deformation, easily there is multi-layer film structure depression or projection and contact with substrate or encapsulation wafer in the resonator therefore with large area cavity, causes overall filter performance not meet design requirement.
Deformation degree for the multi-layer film structure of piezoelectrics wave resonator in correlation technique is excessive, and the problem that causes the Q value of piezoelectrics wave resonator to reduce, not yet proposes effective solution at present.
Summary of the invention
Deformation degree for the multi-layer film structure of piezoelectrics wave resonator in correlation technique is excessive, the problem that causes the Q value reduction of piezoelectrics wave resonator, the present invention proposes a kind of piezoelectrics wave resonator and manufacture method thereof, can control the deformation degree of the multi-layer film structure of piezoelectrics wave resonator, thereby ensure good bulk acoustic wave reflecting effect, make Q value in high level.
Technical scheme of the present invention is achieved in that
According to an aspect of the present invention, provide a kind of piezoelectrics wave resonator.
This piezoelectrics wave resonator comprises:
Sandwich construction;
Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, consists of the sound reflecting structure of piezoelectrics wave resonator at least one cavity forming;
Wherein, in each cavity, sandwich construction is to the bottom notch of this cavity, and do not contact with the bottom of cavity; Or sandwich construction is to the direction projection of the bottom away from this cavity, the height of projection is more than or equal to predetermined height of projection.
And in the situation that sandwich construction is to the bottom notch of this cavity, for each cavity, the minimum range between sandwich construction and the bottom of this cavity is greater than preset distance.
Preferably, above-mentioned preset distance is 0.1 μ m.
Preferably, above-mentioned predetermined height of projection is 0.1 μ m.
Further, in the plane of the opening of each groove, connect the length of long straight line of 2 of edge of opening of this groove and the diameter ratio of the maximum inscribed circle of the opening of this groove is greater than 1.
In addition, above-mentioned sandwich construction comprises bottom electrode, is covered in the piezoelectric layer of bottom electrode top and the top electrode that is covered in piezoelectric layer top, wherein, the region beyond a plurality of grooves, top electrode and bottom electrode are not overlapping.
Alternatively, the opening shape of at least one groove comprises: circle, polygon, irregular shape.
In addition, above-mentioned piezoelectrics wave resonator further comprises:
Supporter, is configured in substrate top;
Cap rock, by supporter supports, has interval between the sandwich construction of projection and cap rock.
A kind of manufacture method of piezoelectrics wave resonator is provided according to an aspect of the present invention.
The manufacture method of this piezoelectrics wave resonator comprises:
Substrate is provided;
On substrate, form at least one groove;
In at least one groove, fill expendable material;
Above substrate, form sandwich construction, sandwich construction covers substrate and at least one groove;
Expendable material in groove is removed, form the sound reflecting structure that at least one cavity forms piezoelectrics wave resonator;
Wherein, by etching, form at least one groove, and, by controlling etching period, control the degree of depth of each groove, avoid expendable material to be removed rear sandwich construction and contact with the bottom of cavity;
Or sandwich construction is to the direction projection of the bottom away from this cavity, the height of projection is more than or equal to predetermined height of projection.
Wherein, the quantity of above-mentioned groove is a plurality of, and, while forming at least one groove on substrate, the quantity of the groove forming by control and/or parameter are controlled at expendable material and are removed rear sandwich construction to the degree of bottom portion of groove depression, and avoid sandwich construction to contact with the bottom of cavity.
And in the situation that sandwich construction is to the bottom notch of this cavity, for each cavity, the minimum range between sandwich construction and the bottom of this cavity is greater than preset distance.
Preferably, above-mentioned preset distance is 0.1 μ m.
Preferably, above-mentioned predetermined height of projection is 0.1 μ m.
Further, in the plane of the opening of each groove, connect the length of long straight line of 2 of edge of opening of this groove and the diameter ratio of the maximum inscribed circle of the opening of this groove is greater than 1.
And above-mentioned sandwich construction comprises bottom electrode, is covered in the piezoelectric layer of bottom electrode top and the top electrode that is covered in piezoelectric layer top, wherein, the region beyond a plurality of grooves, top electrode and bottom electrode are not overlapping.
Alternatively, the opening shape of at least one groove comprises: circle, polygon, irregular shape.
In addition, the manufacture method of above-mentioned piezoelectrics wave resonator further comprises:
Before the expendable material in groove is removed, above substrate, configure supporter;
Expendable material in groove is removed, form the sound reflecting structure that at least one cavity forms piezoelectrics wave resonator;
Wherein, by controlling the contact surface shape of cavity and sandwich construction, avoid expendable material to be removed rear sandwich construction and raise up over the height of supporter.
And the manufacture method of above-mentioned piezoelectrics wave resonator also further comprises:
Above substrate, configure supporter;
Cap rock is provided, by supporter supports, at sandwich construction, in the direction projection situation of the bottom away from this cavity, between the sandwich construction of projection and cap rock, there is interval.
The present invention is the height to degree and the projection of lower recess by the multi-layer film structure in control piezoelectrics wave resonator, the upper and lower both sides of multi-layer film structure of guaranteeing piezoelectrics wave resonator have good air reflection interface, thereby ensure good bulk acoustic wave reflecting effect, guarantee that Q value is in high level.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of piezoelectrics wave resonator in prior art;
Fig. 2 is the schematic diagram of piezoelectrics wave resonator when multi-layer film structure contacts with cavity bottom in prior art;
Fig. 3 is the schematic diagram of piezoelectrics wave resonator when multi-layer film structure and upper strata encapsulate brilliant Surface Contact in prior art;
Fig. 4 be according to the piezoelectrics wave resonator of the embodiment of the present invention at sandwich construction the schematic diagram during to lower recess;
Fig. 5 is the structure chart when sandwich construction is convex according to the piezoelectrics wave resonator of the embodiment of the present invention;
Fig. 6 is according to the schematic diagram of the defined groove surfaces polygonal shape of piezoelectrics wave resonator of the embodiment of the present invention;
Fig. 7 changes the schematic diagram of the groove surfaces polygonal shape of piezoelectrics wave resonator according to the embodiment of the present invention;
Fig. 8 a is the vertical view of the piezoelectrics wave resonator of another embodiment according to the present invention;
Fig. 8 b is the profile along the hatching A-A intercepting of piezoelectrics wave resonator shown in Fig. 8 a;
Fig. 8 c is the profile along the hatching N-N intercepting of piezoelectrics wave resonator shown in Fig. 8 a;
Fig. 9 a is the vertical view of the piezoelectrics wave resonator of another embodiment according to the present invention;
Fig. 9 b is the profile along the hatching A-A intercepting of piezoelectrics wave resonator shown in Fig. 9 a;
Fig. 9 c is the profile along the hatching N-N intercepting of piezoelectrics wave resonator shown in Fig. 9 a.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain, belongs to the scope of protection of the invention.
According to embodiments of the invention, provide a kind of piezoelectrics wave resonator.
According to the piezoelectrics wave resonator of the embodiment of the present invention, can comprise:
Sandwich construction, wherein, sandwich construction comprises hearth electrode, piezoelectric layer and top electrode;
Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, consists of the sound reflecting structure of piezoelectrics wave resonator at least one cavity forming;
Wherein, in each cavity, sandwich construction is to the bottom notch of this cavity, and do not contact with the bottom of cavity.And for each cavity, the minimum range between sandwich construction and the bottom of this cavity is greater than preset distance.For fear of bulk acoustic wave resonator acoustic wave energy, by Air Coupling, arrive substrate, the minimum range of multi-layer film structure and cavity bottom at least should be greater than resonant acoustic wave at 1/4th of air medium wavelength, and therefore, preferably, this preset distance can be 0.1 μ m.
As shown in Figure 4 and Figure 5, according to the piezoelectrics wave resonator structure of the embodiment of the present invention, comprise: substrate S, cavity C, hearth electrode B, piezoelectric layer P and top electrode T, wherein, hearth electrode B, piezoelectric layer P and top electrode T in vertical direction overlapping area are defined as the effective coverage of piezoelectrics wave resonator, and the structure of composite membrane that on cavity area, all films form is defined as to multi-layer film structure M.
In actual applications, as shown in Figure 4, for according to the piezoelectrics wave resonator of the embodiment of the present invention at sandwich construction the schematic diagram during to lower recess, now, multi-layer film structure is to lower recess, and multi-layer film structure does not contact with cavity bottom.By controlling the technological parameter of cavity depth or multi-layer film structure growth, multi-layer film structure is not contacted with cavity bottom.The ultimate range of hearth electrode B and cavity volume bottom is Dp, and preferably, this multi-layer film structure recess minimum point and cavity bottom minimum range should be greater than 0.1 μ m.
For example, by step instrument, on multilayer film M surface, can depict surface profile for the curve to lower recess, by calculated curve minimum point, can obtain the depth capacity Ld of multi-layer film structure depression.By control cavity etch period in preparing substrate, cavity depth Dp be can control, thereby multi-layer film structure recess minimum point and cavity bottom vertical range (Dp-Ld) controlled, make this distance be greater than 0.1 μ m.Like this, the overlapping interior sound wave of scope of effective coverage and cavity area can well be reflected, simultaneously for the further deformation of multi-layer film structure that causes due to environmental change (as variations in temperature or impulsive force) has reserved certain area, avoided in cavity area, revealing and causing the reduction of Q value due to the sound wave of resonator.
According to another embodiment of the invention, provide a kind of piezoelectrics wave resonator.
According to the piezoelectrics wave resonator of the embodiment of the present invention, can comprise:
Sandwich construction;
Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, consists of the sound reflecting structure of piezoelectrics wave resonator at least one cavity forming;
Wherein, in each cavity, sandwich construction is to the direction projection of the bottom away from this cavity, and the height of projection is more than or equal to predetermined height of projection.Alternatively, above-mentioned predetermined height of projection can also be 0.1,0.2,0.3,0.4 μ m.Preferably, above-mentioned predetermined height of projection can be 0.1 μ m.
As shown in Figure 5, the structure chart according to the piezoelectrics wave resonator of the embodiment of the present invention when sandwich construction is convex, wherein, multi-layer film structure M upwards arches upward.Can be so that after removing sacrificial layer material, multi-layer film structure M upwards arches upward, and avoids multi-layer film structure to contact with cavity bottom by the technological parameter of controlling in multi-layer film structure M forming process.
By step instrument, in cross section, one, surface of multi-layer film structure M, scan and can depict surface profile for the middle curve upwards arching upward, like this, the overlapping interior sound wave of scope of effective coverage and cavity area can well be reflected, simultaneously for the further deformation of multi-layer film structure that causes due to environmental change (as variations in temperature or impulsive force) has reserved certain safe range, avoided in cavity area, revealing and causing the reduction of Q value due to the sound wave of resonator.Because multi-layer film structure upwards arches upward, so can form the more shallow cavity of the degree of depth of the piezoelectrics wave resonator structure of the embodiment shown in relative Fig. 4 when making substrate cavity, preferred, cavity depth can be 0.5-1 μ m.Such structural design has reduced etch period, the more important thing is that the relatively dark cavity of shallow cavity makes structure have better stability, has improved the yield in production process.
In addition, the in the situation that of need for environment, according to the piezoelectrics wave resonator of the embodiment of the present invention, may further include:
Supporter, is configured in substrate top;
Cap rock, by supporter supports, has interval between the sandwich construction of projection and cap rock.
The surface of cap rock can be for smooth, or also can upwards cave in.According in the piezoelectrics wave resonator of the embodiment of the present invention, the sandwich construction of projection does not contact with cap rock.For fear of bulk acoustic wave resonator acoustic wave energy, by Air Coupling, arrive cap rock, the minimum range between multi-layer film structure and cap rock at least should be greater than resonant acoustic wave at 1/4th of air medium wavelength.Preferably, this minimum range is greater than 0.1 μ m.
Piezoelectrics wave resonator described in above-described embodiment, the membrane structure of cavity top is to lower recess or upwards arch upward, and between substrate cavity bottom or top encapsulation wafer, there is certain safe distance, avoid because multi-layer film structure reduces with the Q value that contacts the resonator causing of cavity bottom or encapsulation wafer and the performance of filter is impaired.
According to another aspect of the present invention, a kind of method for designing of piezoelectrics wave resonator is provided, wherein, the resonator of the substrate band cavity by small size in parallel, can be when realizing large area frequency impedance performance, control depression or the degree of convexity of multi-layer film structure on cavity, avoid because multi-layer film structure bottom contact with cavity bottom or the multi-layer film structure top problems such as the resonator Q value decline that causes and performance be impaired with encapsulating that wafer contacts.
And, no matter whether adopt the resonator of the substrate band cavity of small size, the cavity shape of substrate can be all long and narrow, and, in the plane of the opening of each groove, connect the length of long straight line of 2 of edge of opening of this groove and the diameter ratio of the maximum inscribed circle of the opening of this groove is greater than 1, alternatively, the opening shape of at least one groove can comprise: circle, polygon, irregular shape.It is controlled that the effect of technical solution of the present invention makes to have the degree of multi-layer film structure depression on the cavity of large-area piezoelectrics wave resonator or projection, avoids because multi-layer film structure bottom contact with cavity bottom or to contact the decline of resonator Q value or the performance that cause impaired with encapsulating wafer at multi-layer film structure top.
According to the piezoelectrics wave resonator structure of the embodiment of the present invention, the surface configuration of its effective coverage and relative substrate cavity has the thin-and-long of being characterized as.The cross sectional shape of cavity can be rectangle, ellipse, circle, polygon etc., and the cross sectional shape of cavity requires length-width ratio to be greater than 1 while being rectangle, and the cross sectional shape of cavity requires oval major axis and minor axis length ratio to be greater than 1 while being oval.When the cross sectional shape of cavity is irregular polygon, the requirement of the cross sectional shape of cavity is defined as follows and is limited: as shown in Figure 6, in definition polygonal region, the diameter of maximum inscribed circle is d, and the ultimate range in definition polygonal region between 2 is L, requires L:d > 1.
As shown in Figure 7, in the situation that keeping area constant, pass through to form long and narrow cavity and the effective coverage on cavity, for example, in Fig. 7, make square U become rectangle U ', make irregularly shaped X become X ', make circular Z become Z ', such structural change is effectively retrained the border of the multilayer film of suspension, in film, be not easy to form very large amount of deflection, multi-layer film structure on cavity can not produce very large depression or epirelief like this, multi-layer film structure bottom can not contact with cavity bottom, sound wave can well be reflected, avoided in cavity area, revealing and causing Q value to reduce due to the sound wave of resonator.In filter at the piezoelectrics wave resonator of usining with cavity as elementary cell, conventionally need to use the piezoelectrics wave resonator of different area.By composition reasonably, go out different area cavity surface shape, make multi-layer film structure excessively the situation of depression or epirelief be under control, avoided the reduction of resonator Q value, the performance of filter of resonator is met design requirement.
In addition, by the technical method in embodiments of the invention, can also control multi-layer film structure to the degree of cavity outer lug, in the situation that piezoelectrics wave resonator structure need to be added a cover encapsulation wafer, multi-layer film structure is not contacted with encapsulation wafer, therefore equally also avoid the leakage of sound wave in effective coverage, avoided resonator Q value to reduce.
In addition, in another embodiment of the present invention, the multi-layer film structure of above-mentioned piezoelectrics wave resonator structure comprises bottom electrode, is covered in the piezoelectric layer of bottom electrode top and the top electrode that is covered in piezoelectric layer top, wherein, region beyond a plurality of grooves, top electrode and bottom electrode are not overlapping.Alternatively, the opening shape of at least one groove can comprise: circle, polygon, irregular shape.
According to technical scheme of the present invention, can realize by the parallel connection of small size piezoelectrics wave resonator the frequency impedance performance of large-area piezoelectricity body wave resonator, and reduce multi-layer film structure depression or epirelief degree simultaneously.Further, the groove surfaces shape of piezoelectrics wave resonator can adopt the shape of ratio shown in Fig. 6.
It shown in Fig. 8 a, 8b, 8c, is the piezoelectrics wave resonator of another embodiment according to the present invention.As shown in Figure 8 a, it is the vertical view of the piezoelectrics wave resonator of another embodiment according to the present invention, according to the piezoelectrics wave resonator structure of the embodiment of the present invention, comprise: substrate S, cavity C, hearth electrode B, piezoelectric layer P and top electrode T, wherein, hearth electrode B, piezoelectric layer P and top electrode T in vertical direction overlapping area are defined as the effective coverage of piezoelectrics wave resonator, and the structure of composite membrane that on cavity area, all films form is defined as to multi-layer film structure; Fig. 8 b is the profile along the hatching A-A intercepting of piezoelectrics wave resonator shown in Fig. 8 a; Fig. 8 c is the profile along the hatching N-N intercepting of piezoelectrics wave resonator shown in Fig. 8 a.By Fig. 8 a-8c, can find out, the bottom electrode forming in substrate strides across two cavitys and is connected to each other together, top electrodes on two cavitys links together equally, piezoelectric layer P is partly etched and exposes hearth electrode B so that electricity connects, its result is connected in parallel two resonator structures on cavity, wherein the coupling part figure of bottom electrode and the coupling part figure of top electrodes do not have overlappingly in the direction perpendicular to substrate, thereby can not form effective coverage outward and cause energy leakage at cavity.Owing to having reduced the area of multi-layer film structure on single cavity, the situation of multi-layer film structure depression has obtained effective control, sound wave can well be reflected, avoided in cavity area, revealing and causing Q value to reduce due to the sound wave of resonator, can realize again the frequency impedance performance that large area resonator has simultaneously.
Equally, by the method in the present embodiment, can also control multi-layer film structure does not contact multi-layer film structure to the degree of cavity outer lug with encapsulation wafer, Fig. 9 a is the vertical view of the piezoelectrics wave resonator of another embodiment according to the present invention, and the structure of piezoelectrics wave resonator shown in Fig. 9 a forms identical with the piezoelectrics wave resonator shown in Fig. 8 a; Fig. 9 b is the profile along the hatching A-A intercepting of piezoelectrics wave resonator shown in Fig. 9 a; Fig. 9 c is the profile along the hatching N-N intercepting of piezoelectrics wave resonator shown in Fig. 9 a.Structure shown in the shown structure of Fig. 9 a-9c and Fig. 8 a-8c is basic identical, difference is that the multi-layer film structure in structure shown in Fig. 9 a-9c (comprising top electrode T, piezoelectric layer P, hearth electrode B) is all to upper process, and and encapsulation there is certain distance between wafer.This convex configuration can make sound wave well be reflected equally, has avoided in cavity area, revealing and causing Q value to reduce due to the sound wave of resonator, can realize again the frequency impedance performance that large area resonator has simultaneously.
Fig. 8 a-8c and Fig. 9 a-9c only show two exemplary embodiments, and for simplicity, do not illustrate for removing the raceway groove of sacrificial layer material in figure.Although all show two resonator cavities in parallel in Fig. 8 a-8c and Fig. 9 a-9c, and its effective coverage is shaped as rectangle, but in fact, the quantity of resonator can be for more, and the cavity of resonator and effective coverage shape can also be circle, ellipse, polygon etc.And parallel way can be varied between resonator, as the top electrode of different resonators and bottom electrode are connected to each other, adopt the metal of the more high conductivity material beyond top electrode or hearth electrode material to carry out the electricity parallel connection etc. of resonator.It should be understood that; every in order to control depression or the epirelief degree of multi-layer film structure, the Q value of avoiding resonator reduces and all should be within the protection range of this patent by realize the way of larger area resonator electrical impedance characteristic effect compared with the parallel connection of small size resonator.
According to embodiments of the invention, provide a kind of manufacture method of piezoelectrics wave resonator.
According to the manufacture method of the piezoelectrics wave resonator of the embodiment of the present invention, comprise:
Step 1, provides substrate;
Step 2 forms at least one groove on substrate;
Step 4 forms sandwich construction above substrate, and sandwich construction covers substrate and at least one groove;
Step 5, removes the expendable material in groove, forms the sound reflecting structure that at least one cavity forms piezoelectrics wave resonator;
Step 6, wherein, forms at least one groove by etching, and, by controlling etching period, control the degree of depth of each groove, avoid expendable material to be removed rear sandwich construction and contact with the bottom of cavity;
Or sandwich construction is to the direction projection of the bottom away from this cavity, the height of projection is more than or equal to predetermined height of projection, and preferably, this predetermined height of projection is 0.1 μ m.Sandwich construction is multi-layer film structure mentioned in literary composition.When sandwich construction raises up, the degree of depth of groove is can be than sandwich construction shallow during to lower recess.
Wherein, the quantity of above-mentioned groove is a plurality of, and, while forming at least one groove on substrate, the quantity of the groove forming by control and/or parameter are controlled at expendable material and are removed rear sandwich construction to the degree of bottom portion of groove depression, and avoid sandwich construction to contact with the bottom of cavity.
And in the situation that sandwich construction is to the bottom notch of this cavity, for each cavity, the minimum range between sandwich construction and the bottom of this cavity is greater than preset distance, preferably, this preset distance is 0.1 μ m.
Further, in the plane of the opening of each groove, connect the length of long straight line of 2 of edge of opening of this groove and the diameter ratio of the maximum inscribed circle of the opening of this groove is greater than 1.
And above-mentioned sandwich construction comprises bottom electrode, is covered in the piezoelectric layer of bottom electrode top and the top electrode that is covered in piezoelectric layer top, wherein, the region beyond a plurality of grooves, top electrode and bottom electrode are not overlapping.
Alternatively, the opening shape of at least one groove comprises: circle, polygon, irregular shape.
In addition, the manufacture method of above-mentioned piezoelectrics wave resonator may further include:
Before the expendable material in groove is removed, above substrate, configure supporter;
Expendable material in groove is removed, form the sound reflecting structure that at least one cavity forms piezoelectrics wave resonator;
Wherein, by controlling the contact surface shape of cavity and sandwich construction, avoid expendable material to be removed rear sandwich construction and raise up over the height of supporter.
And the manufacture method of above-mentioned piezoelectrics wave resonator also further comprises:
Above substrate, configure supporter;
Cap rock is provided, by supporter supports, at sandwich construction, in the direction projection situation of the bottom away from this cavity, between the sandwich construction of projection and cap rock, there is interval.Wherein, the surface of the relative multi-layer film structure of cap rock can be risen to fovea superior, can be also plane.
According to embodiments of the invention, the substrate described in literary composition and encapsulation wafer can consist of silicon, germanium, GaAs, gallium nitride, sapphire etc., but are not limited to above material.Top electrode and bottom electrode can be formed by metalloids such as gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al), titaniums (Ti), upper/lower electrode material is generally identical, but also can be different.Piezoelectric layer can be aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO
3), quartzy (quartz), potassium niobate (KNbO
3) or lithium tantalate (LiTaO
3) etc. material, but be not limited to above material.
In sum, by means of technique scheme of the present invention, the present invention is the height to degree and the epirelief of lower recess by the multi-layer film structure in control piezoelectrics wave resonator, the effective coverage of guaranteeing the multi-layer film structure of piezoelectrics wave resonator does not contact with the upper and lower surface of solids, thereby ensure good bulk acoustic wave reflecting effect, make Q value maintain previous level, thereby obtain a kind ofly guaranteeing that the upper and lower surface of the multi-layer film structure of bulk acoustic wave resonator effective coverage has the structure of piezoelectrics wave resonator structure and the multi-layer film structure piezoelectric filter of good bulk acoustic wave reflecting effect.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (18)
1. a piezoelectrics wave resonator, is characterized in that, comprising:
Sandwich construction;
Substrate, the surface of described substrate has at least one groove, and described sandwich construction covers described at least one groove, consists of the sound reflecting structure of described piezoelectrics wave resonator at least one cavity forming;
Wherein, in each cavity, described sandwich construction is to the bottom notch of this cavity, and do not contact with the bottom of cavity; Or described sandwich construction is to the direction projection of the bottom away from this cavity, the height of projection is more than or equal to predetermined height of projection.
2. piezoelectrics wave resonator according to claim 1, is characterized in that, in the situation that sandwich construction is to the bottom notch of this cavity, for each cavity, the minimum range between described sandwich construction and the bottom of this cavity is greater than preset distance.
3. piezoelectrics wave resonator according to claim 2, is characterized in that, described preset distance is 0.1 μ m.
4. piezoelectrics wave resonator according to claim 1, is characterized in that, described predetermined height of projection is 0.1 μ m.
5. piezoelectrics wave resonator according to claim 1, is characterized in that, in the plane of the opening of each groove, connects the length of long straight line of 2 of edge of opening of this groove and the diameter ratio of the maximum inscribed circle of the opening of this groove is greater than 1.
6. piezoelectrics wave resonator according to claim 1, it is characterized in that, described sandwich construction comprises bottom electrode, is covered in the piezoelectric layer of described bottom electrode top and the top electrode that is covered in described piezoelectric layer top, wherein, region beyond described a plurality of grooves, described top electrode and described bottom electrode are not overlapping.
7. piezoelectrics wave resonator according to claim 1, is characterized in that, the opening shape of described at least one groove comprises: circle, polygon, irregular shape.
8. piezoelectrics wave resonator according to claim 1, is characterized in that, further comprises:
Supporter, is configured in described substrate top;
Cap rock, is supported by above support, between the described sandwich construction of projection and described cap rock, has interval.
9. a manufacture method for piezoelectrics wave resonator, is characterized in that, comprising:
Substrate is provided;
On described substrate, form at least one groove;
In described at least one groove, fill expendable material;
Above described substrate, form sandwich construction, described sandwich construction covers described substrate and described at least one groove;
Expendable material in described groove is removed, form the sound reflecting structure that at least one cavity forms described piezoelectrics wave resonator;
Wherein, by etching, form described at least one groove, and, by controlling etching period, control the degree of depth of each groove, avoid described expendable material to be removed rear sandwich construction and contact with the bottom of cavity;
Or described sandwich construction is to the direction projection of the bottom away from this cavity, the height of projection is more than or equal to predetermined height of projection.
10. manufacture method according to claim 9, it is characterized in that, the quantity of described groove is a plurality of, and, while forming at least one groove on described substrate, the quantity of the groove forming by control and/or parameter are controlled at described expendable material and are removed rear described sandwich construction to the degree of bottom portion of groove depression, and avoid described sandwich construction to contact with the bottom of cavity.
11. manufacture methods according to claim 9, is characterized in that, in the situation that sandwich construction is to the bottom notch of this cavity, for each cavity, the minimum range between described sandwich construction and the bottom of this cavity is greater than preset distance.
12. manufacture methods according to claim 11, is characterized in that, described preset distance is 0.1 μ m.
13. manufacture methods according to claim 9, is characterized in that, described predetermined height of projection is 0.1 μ m.
14. manufacture methods according to claim 9, is characterized in that, in the plane of the opening of each groove, connect the length of long straight line of 2 of edge of opening of this groove and the diameter ratio of the maximum inscribed circle of the opening of this groove is greater than 1.
15. manufacture methods according to claim 9, it is characterized in that, described sandwich construction comprises bottom electrode, is covered in the piezoelectric layer of described bottom electrode top and the top electrode that is covered in described piezoelectric layer top, wherein, region beyond described a plurality of grooves, described top electrode and described bottom electrode are not overlapping.
16. manufacture methods according to claim 9, is characterized in that, the opening shape of described at least one groove comprises: circle, polygon, irregular shape.
17. manufacture methods according to claim 9, is characterized in that, further comprise:
Before the expendable material in described groove is removed, above described substrate, configure supporter;
Expendable material in described groove is removed, form the sound reflecting structure that at least one cavity forms described piezoelectrics wave resonator;
Wherein, by controlling the contact surface shape of described cavity and described sandwich construction, avoid described expendable material to be removed rear described sandwich construction and raise up over the height of above support.
18. manufacture methods according to claim 9, is characterized in that, further comprise:
Above described substrate, configure supporter;
Cap rock is provided, by above support, is supported, at sandwich construction, in the direction projection situation of the bottom away from this cavity, between the described sandwich construction of projection and described cap rock, there is interval.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050099094A1 (en) * | 2003-10-20 | 2005-05-12 | Tokihiro Nishihara | Piezoelectric thin-film resonator and filter using the same |
| US20070194863A1 (en) * | 2006-02-17 | 2007-08-23 | Kabushiki Kaisha Toshiba | Film bulk acoustic resonator and method of manufacturing same |
| CN102545827A (en) * | 2012-01-04 | 2012-07-04 | 华为技术有限公司 | Thin film acoustic resonator, communication device and radio frequency module |
| CN102957397A (en) * | 2011-08-22 | 2013-03-06 | 太阳诱电株式会社 | Acoustic wave device |
| CN202906852U (en) * | 2012-10-24 | 2013-04-24 | 江西捷英达科技有限公司 | An impact-resistant quartz crystal resonator |
| CN103166596A (en) * | 2013-04-11 | 2013-06-19 | 天津大学 | Resonator and filter |
-
2013
- 2013-08-05 CN CN201310337329.2A patent/CN103532516B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050099094A1 (en) * | 2003-10-20 | 2005-05-12 | Tokihiro Nishihara | Piezoelectric thin-film resonator and filter using the same |
| US20070194863A1 (en) * | 2006-02-17 | 2007-08-23 | Kabushiki Kaisha Toshiba | Film bulk acoustic resonator and method of manufacturing same |
| CN102957397A (en) * | 2011-08-22 | 2013-03-06 | 太阳诱电株式会社 | Acoustic wave device |
| CN102545827A (en) * | 2012-01-04 | 2012-07-04 | 华为技术有限公司 | Thin film acoustic resonator, communication device and radio frequency module |
| CN202906852U (en) * | 2012-10-24 | 2013-04-24 | 江西捷英达科技有限公司 | An impact-resistant quartz crystal resonator |
| CN103166596A (en) * | 2013-04-11 | 2013-06-19 | 天津大学 | Resonator and filter |
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