JP4466280B2 - Surface acoustic wave device and manufacturing method thereof - Google Patents

Surface acoustic wave device and manufacturing method thereof Download PDF

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JP4466280B2
JP4466280B2 JP2004243358A JP2004243358A JP4466280B2 JP 4466280 B2 JP4466280 B2 JP 4466280B2 JP 2004243358 A JP2004243358 A JP 2004243358A JP 2004243358 A JP2004243358 A JP 2004243358A JP 4466280 B2 JP4466280 B2 JP 4466280B2
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acoustic wave
surface acoustic
wave filter
piezoelectric substrate
shield electrode
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JP2006060747A (en
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了一 高山
光弘 古川
孝 井上
哲也 降籏
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Description

本発明は、特に携帯電話等に用いられる、弾性表面波デバイスおよびその製造方法に関するものである。   The present invention relates to a surface acoustic wave device particularly used for a mobile phone or the like and a method for manufacturing the same.

近年携帯電話のマルチバンド化が進展し、弾性表面波デバイスに対しても、複数の周波数のフィルタを１つにしたマルチチャンネル化、弾性表面波を用いたアンテナ共用器（以下、ＳＡＷデュプレクサと呼称する）等の複合化、およびこれらの小型化への要望が強くなってきている。しかしながら小型化していくと複数のフィルタ間で電磁的な結合が生じ、アイソレーション等の特性が劣化するという問題を有していた。これに対して、従来より入出力間の電磁的な結合を防止するために、金属キャップにシールド用電極をつけることが行われてきたが、これらの方法では、圧電基板表面付近を伝播するものに対しては十分な効果が得られなかった。   In recent years, mobile phones have become multiband, and for surface acoustic wave devices, multi-channel filters that combine multiple frequency filters and antenna duplexers that use surface acoustic waves (hereinafter referred to as SAW duplexers). And the like, and the demand for miniaturization of these has become stronger. However, when the size is reduced, electromagnetic coupling occurs between a plurality of filters, and there is a problem that characteristics such as isolation deteriorate. On the other hand, in order to prevent electromagnetic coupling between input and output, a shield electrode has been attached to a metal cap, but these methods propagate near the surface of the piezoelectric substrate. A sufficient effect was not obtained.

なお、この出願に関連する先行技術文献情報としては、例えば特許文献１が知られている。
実開平５−２３６１９号公報 As prior art document information related to this application, for example, Patent Document 1 is known.
Japanese Utility Model Publication No. 5-23619

本発明は、上記従来の課題を解決するものであり、小型化してもアイソレーション特性等の劣化の少ない弾性表面波デバイスを得ることを目的とするものである。   The present invention solves the above-described conventional problems, and an object of the present invention is to obtain a surface acoustic wave device with little deterioration in isolation characteristics and the like even if it is downsized.

前記目的を達成するために本発明は、圧電基板と、この圧電基板の表面に設けた複数個の弾性表面波フィルタパターンと、対向する弾性表面波フィルタパターン間に圧電基板の表面から上方に延伸するように設けられたシールド電極とを備え、シールド電極の圧電基板表面からの高さを、複数個の弾性表面波フィルタパターンのうち最も周波数が低いパターンのピッチの２倍より高くしたものである。 In order to achieve the above object, the present invention extends upward from the surface of the piezoelectric substrate between the piezoelectric substrate, a plurality of surface acoustic wave filter patterns provided on the surface of the piezoelectric substrate, and the opposing surface acoustic wave filter patterns. The height of the shield electrode from the surface of the piezoelectric substrate is higher than twice the pitch of the pattern having the lowest frequency among the plurality of surface acoustic wave filter patterns. .

本発明によれば、圧電基板の表面から上方に延伸するように設けられたシールド電極を設けることにより、圧電基板表面付近を伝わる電磁波による特性の劣化を防ぐことができ、小型化しても特性の優れた弾性表面波デバイスを得ることができる。   According to the present invention, by providing the shield electrode provided so as to extend upward from the surface of the piezoelectric substrate, it is possible to prevent the deterioration of the property due to the electromagnetic wave transmitted near the surface of the piezoelectric substrate. An excellent surface acoustic wave device can be obtained.

（実施の形態１）
以下、実施の形態１を用いて、本発明について説明する。 (Embodiment 1)
Hereinafter, the present invention will be described using the first embodiment.

図１（ａ）は本発明の実施の形態１におけるＳＡＷデュプレクサの内部上面図、図１（ｂ）は同断面図である。   FIG. 1A is an internal top view of a SAW duplexer according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view thereof.

図１（ａ）においては、移相器を内蔵したＬＴＣＣ（低温焼成セラミック）よりなるパッケージ１１に、３９°ＹカットＸ伝播タンタル酸リチウムよりなる圧電基板１２のチップを実装し、ワイヤ１５により電気的接続を行ったものである。圧電基板１２の表面には、通過帯域中心周波数が８３６．５ＭＨｚの送信フィルタパターン１３、通過帯域中心周波数が８８１．５ＭＨｚの受信フィルタパターン１４、およびシールド電極１６を設けている。ここで送信フィルタパターン１３と受信フィルタパターン１４とは、チップ表面において電気的に独立に設けられており、送信フィルタパターン１３と受信フィルタパターン１４の間全体を通るようにシールド電極１６を設け、シールド電極１６をワイヤ１５によりグランドに電気的に接続する。送信フィルタパターン１３および受信フィルタパターン１４の電極膜厚を約０．４μｍ、周波数が低い送信フィルタパターン１３のピッチの２倍（すなわち弾性表面波の波長）を約４μｍとし、シールド電極１６の圧電基板１２の表面からの高さ（図１（ｂ）のｈ）を約５μｍとする。以上のように構成された弾性表面波デバイスについて、発明者らは、フィルタ間のアイソレーションを確認したところ、シールド電極を設けることで、小型化とフィルタ間の十分なアイソレーションとを両立できることを確認した。   In FIG. 1A, a chip of a piezoelectric substrate 12 made of 39 ° Y-cut X-propagating lithium tantalate is mounted on a package 11 made of LTCC (low-temperature fired ceramic) with a built-in phase shifter. Connection. A transmission filter pattern 13 having a passband center frequency of 836.5 MHz, a reception filter pattern 14 having a passband center frequency of 881.5 MHz, and a shield electrode 16 are provided on the surface of the piezoelectric substrate 12. Here, the transmission filter pattern 13 and the reception filter pattern 14 are provided electrically independently on the chip surface, and a shield electrode 16 is provided so as to pass between the transmission filter pattern 13 and the reception filter pattern 14, thereby shielding the shield. The electrode 16 is electrically connected to the ground by the wire 15. The electrode film thickness of the transmission filter pattern 13 and the reception filter pattern 14 is about 0.4 μm, and the pitch of the transmission filter pattern 13 having a low frequency (that is, the surface acoustic wave wavelength) is about 4 μm. The height from the surface of 12 (h in FIG. 1B) is about 5 μm. Regarding the surface acoustic wave device configured as described above, the inventors have confirmed the isolation between the filters. By providing a shield electrode, the inventors have found that both miniaturization and sufficient isolation between the filters can be achieved. confirmed.

さらに、発明者らは、シールド電極１６の高さｈとアイソレーションの関係を調べた結果、シールド電極１６の高さｈが低いとアイソレーションを向上させる効果があまり見られず、弾性表面波の波長と同程度以上とすると、その効果が大きくなることを確認した。原理的には、高いほど効果があがることになるが、その上限は、物理的な制約によって決定され、圧電基板の厚さより高くする必要はない。   Further, as a result of examining the relationship between the height h of the shield electrode 16 and the isolation, the inventors have found that the effect of improving the isolation is not so much seen when the height h of the shield electrode 16 is low. It has been confirmed that the effect increases when the wavelength is equal to or greater than the wavelength. In principle, the higher the effect, the higher the effect, but the upper limit is determined by physical constraints and does not need to be higher than the thickness of the piezoelectric substrate.

なお、図１（ｂ）ではシールド電極１６全体を金属で構成しているが、図２のように、フィルムレジスト等の絶縁物による壁１７を圧電基板１２の表面に設け、壁１７の上面、側面の一部およびその周辺に金属膜を形成してシールド電極１６を構成しても良い。   In FIG. 1B, the entire shield electrode 16 is made of metal. However, as shown in FIG. 2, a wall 17 made of an insulator such as a film resist is provided on the surface of the piezoelectric substrate 12, and the upper surface of the wall 17, The shield electrode 16 may be configured by forming a metal film on a part of the side surface and the periphery thereof.

（実施の形態２）
以下、実施の形態２を用いて、本発明について説明する。本実施の形態２に係る発明は、実施の形態１にかかる発明が対向する弾性表面波フィルタパターン間に圧電基板の表面から上方に延伸するようにシールド電極を設けた構成であったのに対して、本実施の形態２にかかる発明は弾性表面波フィルタパターンもしくは弾性表面波フィルタパターンを構成する弾性表面波共振子パターンの上方空間及び周囲を覆うように設けた封止部材を有し、かつ対向する弾性表面波フィルタ間の封止部材の側壁の外側もしくは内側にシールド電極を設けた点で実施の形態１と相違する。 (Embodiment 2)
Hereinafter, the present invention will be described using the second embodiment. The invention according to the second embodiment is a configuration in which the shield electrode is provided so as to extend upward from the surface of the piezoelectric substrate between the surface acoustic wave filter patterns opposed to the invention according to the first embodiment. Thus, the invention according to the second embodiment has a sealing member provided so as to cover the space above and the periphery of the surface acoustic wave resonator pattern constituting the surface acoustic wave filter pattern or the surface acoustic wave filter pattern, and The difference from Embodiment 1 is that a shield electrode is provided outside or inside the side wall of the sealing member between the opposing surface acoustic wave filters.

図３は本発明の実施の形態２におけるＳＡＷデュプレクサチップの断面図である。   FIG. 3 is a cross-sectional view of a SAW duplexer chip according to Embodiment 2 of the present invention.

図３においては、圧電基板１２の表面に、送信フィルタパターン１３、受信フィルタパターン１４を設け、それぞれのパターンを中空構造で封止するように天面と側壁を有する酸化ケイ素等からなる封止部材１８を設け、この２つのフィルタパターンの互いに対向する封止部材１８の側面および封止部材の天面の外側、および圧電基板１２の表面にシールド電極１６を設け、これらをグランドに接続したものである。ここで重要なことは、圧電基板１２の表面から封止部材１８の側面の外側にシールド電極１６を設けることにより、シールド電極１６の圧電基板１２の表面からの高さｈを十分に確保することである。さらにシールド電極１６を封止部材１８の天面まで伸ばすことによりパターンの上方空間をも覆う方がより好ましい。   In FIG. 3, a transmitting filter pattern 13 and a receiving filter pattern 14 are provided on the surface of the piezoelectric substrate 12, and a sealing member made of silicon oxide or the like having a top surface and side walls so as to seal each pattern with a hollow structure. 18, shield electrodes 16 are provided on the side surfaces of the sealing member 18 facing each other, the outer surface of the top surface of the sealing member, and the surface of the piezoelectric substrate 12, and these are connected to the ground. is there. What is important here is that a sufficient height h of the shield electrode 16 from the surface of the piezoelectric substrate 12 is ensured by providing the shield electrode 16 from the surface of the piezoelectric substrate 12 to the outside of the side surface of the sealing member 18. It is. Further, it is more preferable to cover the upper space of the pattern by extending the shield electrode 16 to the top surface of the sealing member 18.

なお、図３では、送信フィルタパターン１３、受信フィルタパターン１４の両方にシールド電極１６を設けて繋げているが、いずれか一方に設ける、あるいは電気的に分離して両方に設け、別々のグランド端子に接続するものであっても構わない。   In FIG. 3, the shield electrode 16 is provided and connected to both the transmission filter pattern 13 and the reception filter pattern 14. However, the shield electrode 16 is provided on either one of them, or is electrically separated and provided on both, and separate ground terminals are provided. You may connect to.

また、ここでは送信フィルタパターン１３、受信フィルタパターン１４全体をそれぞれ一つの中空構造の中に封止しているが、たとえばラダー型フィルタのように共振子を組み合わせてフィルタを構成する場合、それぞれの共振子ごともしくは直列腕の共振子と並列腕の共振子ごとに中空構造を作っても良く、この場合にも、少なくとも２つのフィルタが対向する部分の封止部材１８の側面にシールド電極１６を設けていれば、同様の効果が得られる。   Here, the entire transmission filter pattern 13 and reception filter pattern 14 are sealed in a single hollow structure. However, when a filter is configured by combining resonators such as a ladder filter, for example, A hollow structure may be formed for each resonator or for each series arm resonator and each parallel arm resonator. In this case as well, the shield electrode 16 is provided on the side surface of the sealing member 18 where at least two filters face each other. If provided, the same effect can be obtained.

図４においては、圧電基板１２の表面に、送信フィルタパターン１３、受信フィルタパターン１４を設け、それぞれのパターンを中空構造で封止するように天面と側壁を有する酸化ケイ素等からなる封止部材１８を設け、この２つのパターンの対向する封止部材１８の側面および天面の内側、および圧電基板１２の表面にシールド電極１６を設け、グランドに接続したものである。この場合も図３の場合と同様に、圧電基板１２の表面からシールド電極１６が上方に伸び、その高さｈを十分に確保することが重要である。このようにすることにより、シールド電極１６を、よりパターンに近づけることができ、さらにアイソレーション抑圧の効果を上げることができる。   In FIG. 4, a transmitting filter pattern 13 and a receiving filter pattern 14 are provided on the surface of the piezoelectric substrate 12, and a sealing member made of silicon oxide or the like having a top surface and a side wall so as to seal each pattern with a hollow structure. The shield electrode 16 is provided on the side surface and the top surface of the opposing sealing member 18 of the two patterns and on the surface of the piezoelectric substrate 12 and connected to the ground. In this case as well, as in the case of FIG. 3, it is important that the shield electrode 16 extends upward from the surface of the piezoelectric substrate 12 and that the height h is sufficiently secured. By doing so, the shield electrode 16 can be made closer to the pattern, and the effect of suppressing the isolation can be further increased.

次にこれらの製造方法について説明する。   Next, these manufacturing methods will be described.

図５は本発明の実施の形態２におけるＳＡＷデュプレクサウェハの製造方法を説明するための図である。   FIG. 5 is a diagram for explaining a method of manufacturing a SAW duplexer wafer in the second embodiment of the present invention.

図５（ａ）においては、３９°ＹカットＸ伝播タンタル酸リチウムよりなる圧電基板２１のウェハの表面に、弾性表面波フィルタパターン２２を通常のフォトリソグラフィー技術を用いて形成するものであり、電極材料としてはＴｉと、ＡｌにＭｇ、Ｃｕをドーピングしたものを積層して、約０．４μｍの厚さで形成する。   In FIG. 5A, a surface acoustic wave filter pattern 22 is formed on the surface of a wafer of a piezoelectric substrate 21 made of 39 ° Y-cut X-propagating lithium tantalate using a normal photolithography technique. As materials, Ti and Al doped with Mg and Cu are stacked to form a thickness of about 0.4 μm.

図５（ｂ）においては、弾性表面波フィルタパターン２２を含む領域にポリシリコン等からなる犠牲層２３を形成するものであり、犠牲層２３の厚さは、約１０μｍの厚さで形成する。   In FIG. 5B, a sacrificial layer 23 made of polysilicon or the like is formed in a region including the surface acoustic wave filter pattern 22, and the sacrificial layer 23 is formed with a thickness of about 10 μm.

図５（ｃ）においては、犠牲層２３を囲む領域に酸化シリコン等からなる封止部材２４を形成するものであり、封止部材２４の厚さは、約２０μｍの厚さで形成する。   In FIG. 5C, a sealing member 24 made of silicon oxide or the like is formed in a region surrounding the sacrificial layer 23, and the sealing member 24 is formed with a thickness of about 20 μm.

図５（ｄ）においては、封止部材２４の天面の一部に穴２５をあけて、犠牲層２３を除去するものであり、穴２５をあけるためには、レジストパターンを形成したのち、ＣＦ4等のエッチングガスによりドライエッチングを行い、犠牲層２３を除去するためには、ＸｅＦ2等のガスを用いる。ここで穴２５をあけるときにエッチング条件をコントロールすることにより、犠牲層２３に近づくほど穴の径が小さくなるようにテーパをつけることが望ましい。 In FIG. 5D, a hole 25 is formed in a part of the top surface of the sealing member 24 to remove the sacrificial layer 23. To form the hole 25, after forming a resist pattern, In order to remove the sacrificial layer 23 by dry etching using an etching gas such as CF 4, a gas such as XeF 2 is used. Here, by controlling the etching conditions when the hole 25 is formed, it is desirable to taper the hole so that the diameter of the hole becomes smaller toward the sacrificial layer 23.

図５（ｅ）においては、Ａｌ等の金属あるいは酸化シリコン等の絶縁物を、蒸着あるいはスパッタ等により、穴２５を塞ぎ、弾性表面波フィルタパターン２２を含む領域を気密封止するものであり、封止するのに金属を用いる場合、弾性表面波フィルタパターン２２の上に保護膜として、酸化シリコン等の絶縁物の層を形成しておくことが望ましい。   In FIG. 5 (e), a metal such as Al or an insulator such as silicon oxide is used to close the hole 25 by vapor deposition or sputtering, and the region including the surface acoustic wave filter pattern 22 is hermetically sealed. When metal is used for sealing, it is desirable to form an insulating layer such as silicon oxide on the surface acoustic wave filter pattern 22 as a protective film.

図５（ｆ）においては、封止部材２４の側面および天面、およびその周辺の圧電基板２１の表面に所定のパターンでシールド電極２６を設けるものであり、シールド電極２６の材料は、金属であれば何でも構わないが、Ａｌあるいはその合金が加工性も含めて望ましい。これを所定の位置で切断することにより、弾性表面波デバイスの素子を得ることができる。   In FIG. 5F, the shield electrode 26 is provided in a predetermined pattern on the side surface and the top surface of the sealing member 24 and the surface of the piezoelectric substrate 21 around the sealing member 24. The material of the shield electrode 26 is metal. Any material may be used as long as Al or an alloy thereof is preferable including workability. By cutting this at a predetermined position, an element of the surface acoustic wave device can be obtained.

なお、穴２５を塞ぐ材料として金属を用いる場合、穴を塞ぐ工程と、シールド電極２６の層を形成する工程とを同時に行っても良い。   When a metal is used as a material for closing the hole 25, the step of closing the hole and the step of forming the layer of the shield electrode 26 may be performed simultaneously.

このようにすることにより、弾性表面波フィルタパターン２２を気密封止し、かつ圧電基板２１の表面から上方に伸びるシールド電極２６を形成することができ、アイソレーション特性の優れたＳＡＷデュプレクサを得ることができる。   By doing so, the surface acoustic wave filter pattern 22 can be hermetically sealed and the shield electrode 26 extending upward from the surface of the piezoelectric substrate 21 can be formed, and a SAW duplexer having excellent isolation characteristics can be obtained. Can do.

図６は本発明の実施の形態２におけるＳＡＷデュプレクサウェハの別の製造方法を説明するための図である。   FIG. 6 is a diagram for explaining another method of manufacturing a SAW duplexer wafer in the second embodiment of the present invention.

図６（ａ）、図６（ｂ）においては、図５（ａ）、図５（ｂ）と同様である。   6 (a) and 6 (b) are the same as FIGS. 5 (a) and 5 (b).

図６（ｃ）においては、犠牲層２３および圧電基板２１の表面に所定のパターンでシールド電極２６を設けるものであり、シールド電極２６の材料としては、弾性表面波フィルタパターン２２と主成分が同じあるいは同じエッチングガスで加工できるものであることが望ましい。   In FIG. 6C, the shield electrode 26 is provided in a predetermined pattern on the surface of the sacrificial layer 23 and the piezoelectric substrate 21. The material of the shield electrode 26 is the same as that of the surface acoustic wave filter pattern 22. Or it is desirable that it can be processed with the same etching gas.

図６（ｄ）においては、犠牲層２３を囲む領域に酸化シリコン等からなる封止部材２４を形成するものである。   In FIG. 6D, a sealing member 24 made of silicon oxide or the like is formed in a region surrounding the sacrificial layer 23.

図６（ｅ）においては、封止部材２４の天面の一部に穴２５をあけて、犠牲層２３を除去するものである。   In FIG. 6E, the sacrificial layer 23 is removed by making a hole 25 in a part of the top surface of the sealing member 24.

図６（ｆ）においては、Ａｌ等の金属あるいは酸化シリコン等の絶縁物を、蒸着あるいはスパッタ等により、穴２５を塞ぎ、弾性表面波フィルタパターン２２を含む領域を気密封止するものである。これを所定の位置で切断することにより、弾性表面波デバイスの素子を得ることができる。   In FIG. 6F, a hole 25 is closed by vapor deposition or sputtering with a metal such as Al or an insulator such as silicon oxide, and a region including the surface acoustic wave filter pattern 22 is hermetically sealed. By cutting this at a predetermined position, an element of the surface acoustic wave device can be obtained.

このようにして、気密封止した封止部材の内側の面にシールド電極の層を形成することができる。以上のように構成された弾性表面波デバイスについて、発明者らは、フィルタ間のアイソレーションを確認したところ、シールド電極を設けることで、小型化とフィルタ間の十分なアイソレーションとを両立できることを確認した。   In this manner, a shield electrode layer can be formed on the inner surface of the hermetically sealed sealing member. Regarding the surface acoustic wave device configured as described above, the inventors have confirmed the isolation between the filters. By providing a shield electrode, the inventors have found that both miniaturization and sufficient isolation between the filters can be achieved. confirmed.

本発明は、複数個のフィルタを１チップ上に形成した弾性表面波デバイスで、チップサイズを小さくしてもアイソレーション特性の劣化の少ない弾性表面波デバイスを実現するものであり、産業上有用である。   The present invention is a surface acoustic wave device in which a plurality of filters are formed on one chip, and realizes a surface acoustic wave device with little deterioration in isolation characteristics even when the chip size is reduced. is there.

（ａ）本発明の実施の形態１におけるＳＡＷデュプレクサの内部上面図、（ｂ）本発明の実施の形態１におけるＳＡＷデュプレクサの断面図(A) Internal top view of SAW duplexer in embodiment 1 of the present invention, (b) Cross-sectional view of SAW duplexer in embodiment 1 of the present invention 本発明の実施の形態１における別のＳＡＷデュプレクサの断面図Sectional drawing of another SAW duplexer in Embodiment 1 of this invention 本発明の実施の形態２におけるＳＡＷデュプレクサチップの断面図Sectional drawing of the SAW duplexer chip in Embodiment 2 of this invention 本発明の実施の形態２における別のＳＡＷデュプレクサチップの断面図Sectional drawing of another SAW duplexer chip in Embodiment 2 of this invention 本発明の実施の形態２におけるＳＡＷデュプレクサウェハの製造方法を説明するための図The figure for demonstrating the manufacturing method of the SAW duplexer wafer in Embodiment 2 of this invention 本発明の実施の形態２における別のＳＡＷデュプレクサウェハの製造方法を説明するための図The figure for demonstrating the manufacturing method of another SAW duplexer wafer in Embodiment 2 of this invention

符号の説明Explanation of symbols

１１ パッケージ
１２ 圧電基板
１３ 送信フィルタパターン
１４ 受信フィルタパターン
１５ ワイヤ
１６ シールド電極
１７ 壁
１８ 封止部材
２１ 圧電基板
２２ 弾性表面波フィルタパターン
２３ 犠牲層
２４ 封止部材
２５ 穴
２６ シールド電極 DESCRIPTION OF SYMBOLS 11 Package 12 Piezoelectric substrate 13 Transmission filter pattern 14 Reception filter pattern 15 Wire 16 Shield electrode 17 Wall 18 Sealing member 21 Piezoelectric substrate 22 Surface acoustic wave filter pattern 23 Sacrificial layer 24 Sealing member 25 Hole 26 Shield electrode

Claims (6)

圧電基板と、この圧電基板の表面に設けた複数個の弾性表面波フィルタパターンと、対向する前記弾性表面波フィルタパターン間に前記圧電基板の表面から上方に延伸するように設けられたシールド電極とを備え、前記シールド電極の前記圧電基板表面からの高さを、前記複数個の弾性表面波フィルタパターンのうち最も周波数が低いパターンのピッチの２倍より高くした弾性表面波デバイス。 A piezoelectric substrate, a plurality of surface acoustic wave filter patterns provided on the surface of the piezoelectric substrate, and a shield electrode provided so as to extend upward from the surface of the piezoelectric substrate between the opposing surface acoustic wave filter patterns A surface acoustic wave device in which the height of the shield electrode from the surface of the piezoelectric substrate is higher than twice the pitch of the lowest frequency pattern among the plurality of surface acoustic wave filter patterns . シールド電極は、少なくとも１つの弾性表面波フィルタパターンの上方空間をも覆う請求項１記載の弾性表面波デバイス。 The surface acoustic wave device according to claim 1, wherein the shield electrode also covers an upper space of at least one surface acoustic wave filter pattern. 圧電基板と、この圧電基板の表面に設けた複数個の弾性表面波フィルタパターンと、この弾性表面波フィルタパターンもしくは弾性表面波フィルタパターンを構成する弾性表面波共振子パターンの上方空間及び周囲を覆うように設けた天面と側壁とを有する封止部材と、前記弾性表面波フィルタパターン間に設けたシールド電極とを備え、前記シールド電極は少なくとも対向する弾性表面波フィルタパターン間の前記封止部材の側壁の内側に設けた請求項１記載の弾性表面波デバイス。 The piezoelectric substrate, a plurality of surface acoustic wave filter patterns provided on the surface of the piezoelectric substrate, and the surface and surroundings of the surface acoustic wave resonator pattern constituting the surface acoustic wave filter pattern or the surface acoustic wave filter pattern are covered. And a shield electrode provided between the surface acoustic wave filter patterns, wherein the shield electrode is at least between the surface acoustic wave filter patterns facing each other. The surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is provided on an inner side of the side wall. 圧電基板と、この圧電基板の表面に設けた複数個の弾性表面波フィルタパターンと、この弾性表面波フィルタパターンもしくは弾性表面波フィルタパターンを構成する弾性表面波共振子パターンの上方空間及び周囲を覆うように設けた天面と側壁とを有する封止部材と、前記弾性表面波フィルタパターン間に設けたシールド電極とを備え、前記シールド電極は少なくとも対向する弾性表面波フィルタパターン間の前記封止部材の側壁の外側に設けた請求項１記載の弾性表面波デバイス。 The piezoelectric substrate, a plurality of surface acoustic wave filter patterns provided on the surface of the piezoelectric substrate, and the surface and surroundings of the surface acoustic wave resonator pattern constituting the surface acoustic wave filter pattern or the surface acoustic wave filter pattern are covered. And a shield electrode provided between the surface acoustic wave filter patterns, wherein the shield electrode is at least between the surface acoustic wave filter patterns facing each other. The surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is provided on the outside of the side wall. ウェハ状の圧電基板の表面に複数個の弾性表面波フィルタパターンからなる弾性表面波デバイスパターンを複数個形成する電極形成工程と、少なくとも前記弾性表面波フィルタパターンもしくは前記弾性表面波フィルタパターンを構成する弾性表面波共振子パターンの上に犠牲層を形成する犠牲層形成工程と、前記犠牲層の上および周囲に封止部材の層を形成する封止部材形成工程と、前記封止部材の一部に穴をあけ犠牲層を除去する空間形成工程と、前記封止部材の一部にあけた穴を塞ぐ封止工程と、少なくとも対向する前記弾性表面波フィルタパターン間の前記封止部材の側壁の外側にシールド電極を形成するシールド電極形成工程と、前記ウェハ状の圧電基板を切断して個々の弾性表面波デバイスを得る切断工程と、を備える弾性表面波デバイスの製造方法。 An electrode forming step of forming a plurality of surface acoustic wave device patterns comprising a plurality of surface acoustic wave filter patterns on the surface of a wafer-like piezoelectric substrate, and at least the surface acoustic wave filter pattern or the surface acoustic wave filter pattern is configured A sacrificial layer forming step of forming a sacrificial layer on the surface acoustic wave resonator pattern, a sealing member forming step of forming a sealing member layer on and around the sacrificial layer, and a part of the sealing member Forming a space in the hole, removing the sacrificial layer, sealing the hole formed in a part of the sealing member, and at least the side wall of the sealing member between the surface acoustic wave filter patterns facing each other An elastic surface comprising: a shield electrode forming step of forming a shield electrode on the outside; and a cutting step of cutting the wafer-like piezoelectric substrate to obtain individual surface acoustic wave devices A device manufacturing method. ウェハ状の圧電基板の表面に複数個の弾性表面波フィルタパターンからなる弾性表面波デバイスパターンを複数個形成する電極形成工程と、少なくとも前記弾性表面波フィルタパターンもしくは前記弾性表面波フィルタパターンを構成する弾性表面波共振子パターンの上に犠牲層を形成する犠牲層形成工程と、前記犠牲層の上面及び側面の一部およびその周辺の前記圧電基板表面の一部にシールド電極を形成するシールド電極形成工程と、前記犠牲層の上および周囲に封止部材の層を形成する封止部材形成工程と、前記封止部材の一部に穴をあけ犠牲層を除去する空間形成工程と、前記ウェハ状の圧電基板を切断して個々の弾性表面波デバイスを得る切断工程と、を備える弾性表面波デバイスの製造方法。 An electrode forming step of forming a plurality of surface acoustic wave device patterns comprising a plurality of surface acoustic wave filter patterns on the surface of a wafer-like piezoelectric substrate, and at least the surface acoustic wave filter pattern or the surface acoustic wave filter pattern is configured A sacrificial layer forming step for forming a sacrificial layer on the surface acoustic wave resonator pattern, and a shield electrode forming for forming a shield electrode on a part of the upper and side surfaces of the sacrificial layer and a part of the surface of the piezoelectric substrate around the sacrificial layer A sealing member forming step of forming a sealing member layer on and around the sacrificial layer, a space forming step of making a hole in a part of the sealing member and removing the sacrificial layer, and the wafer shape Cutting the piezoelectric substrate to obtain individual surface acoustic wave devices, and a method for manufacturing the surface acoustic wave device.
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