JP5025963B2 - Electronic component, method for manufacturing the same, and electronic device using the electronic component - Google Patents

Description

  The present invention relates to an electronic component and an electronic apparatus using the electronic component.

  Hereinafter, conventional electronic components will be described.

  In the conventional technique, a surface acoustic wave device (hereinafter referred to as “SAW device”) will be described as an example of an electronic component.

In recent years, small and light SAW devices are often used in electronic devices such as various mobile communication terminal devices. In particular, a SAW filter manufactured using a lithium tantalate (hereinafter referred to as “LT”) substrate has been widely used in a wireless circuit portion of a cellular phone system in the 800 MHz to 2 GHz band. However, since the LT substrate has a large coefficient of thermal expansion of the substrate in the propagation direction of the surface acoustic wave, and the elastic constant itself also changes with temperature, the frequency characteristic of the filter is greatly shifted with respect to the temperature change. Had problems with properties. For this, the piezoelectric substrate is formed on the piezoelectric substrate, and is formed by sputtering on the piezoelectric substrate so as to cover at least one IDT constituting the IDT, and the electrode film, And having an insulating film with irregularities on the upper surface, the thickness of the electrode film can be in the range of 1 to 3% of the wavelength of the excited surface wave, and good electrical characteristics can be obtained. Patent Document 1 discloses a method for obtaining a SAW device having good characteristics.
Japanese Patent Laid-Open No. 2004-254291

  However, in Patent Document 1, since the thickness of the electrode film is in the range of 1 to 3% of the wavelength of the excited surface wave, it is difficult to say that the conductor loss of the electrode film is small, and the electrical characteristics deteriorate. . Further, when the thickness of the electrode film is 4% or more, the uneven shape of the insulating film formed on the electrode film becomes large, and the insertion loss is deteriorated. However, in these specific examples, a 36 ° YLT substrate is used as the substrate, and specific implementation regarding insertion loss when a lithium niobate substrate (hereinafter referred to as “LN”) is used as the substrate. An example is not shown. Therefore, the inventors conducted an experiment on the thickness of the electrode film in detail using an LN substrate as the substrate. Among them, a new problem not found in Patent Document 1 was found. It is possible to realize good characteristics when the film thickness of the electrode film is 4% or less. However, when the film thickness is 4.5% or more, spurious is generated on the side lower than the resonance frequency in the frequency characteristics of the resonator. It is that the special characteristic cannot be realized.

  The present invention solves the above-mentioned problem, uses an LN substrate as a substrate, sets the film thickness of the electrode film to 4.5% or more, and forms a protective film on the electrode. The object is to obtain an electronic component having excellent temperature characteristics and electrical characteristics by adjusting the shape to an arbitrary shape.

To achieve the above object, the present invention comprises a substrate, a comb electrode provided on the upper surface of the substrate, and a protective film that covers the comb electrode and has a concavo-convex shape on the top surface, When the rotation angle in the Z-axis direction around the X axis is D °,
0 ° ≦ D ° ≦ 25 °
A lithium niobate substrate cut out from the Y plate, wherein the comb electrode is made of aluminum, an alloy containing aluminum as a main component or a metal heavier than aluminum, and a pitch width per pitch of the comb electrode is p, the width per electrode finger constituting the comb electrode, p1, the width between the electrode fingers p2, and the thickness of the comb electrode defined by the height from the substrate surface to the top of the comb electrode H, where t is the thickness of the protective film defined by the height from the substrate surface to the concave portion of the protective film,
9% ≧ h / (2 × p) ≧ 4.5% (provided that p1 + p2 = p is satisfied)
And
The pitch width per pitch of the concavo-convex shape of the protective film is L, the width of the convex portion per pitch of the concavo-convex shape of the protective film is L1, the width of the concave portion is L2, and the pitch per pitch of the comb electrode When the width is p, the width per electrode finger constituting the comb electrode is p1, and the width between the electrode fingers is p2,
L1 ≦ p1 and L2 ≧ p2
(However, p1 + p2 = p, satisfies the relationship of L1 + L2 = L) der is, when using a metal heavier than the aluminum to the comb electrode was an electronic component having a reduced the L1 to the p1 Thus, an appropriate reflection characteristic is realized, and as a result, even when the protective film is formed so as to cover the electrode and there is an uneven state on the surface, an electronic component with good characteristics can be obtained. Have.

  As described above, according to the present invention, the protective film is formed so as to cover the electrode formed on the LN substrate, and the shape and thickness of the protective film are set in a specific range, and further the electrode film thickness An electronic component having excellent temperature characteristics and electrical characteristics can be obtained by setting the cut-out angle of the substrate within a specific range.

Hereinafter, electronic components according to embodiments of the present invention will be described with reference to the drawings.
In the present embodiment, a SAW device will be described as an example of an electronic component.

(Embodiment 1)
FIG. 1 is a top view of a SAW device as an electronic component according to Embodiment 1 of the present invention, and FIG. 2 is a cross-sectional view of a portion A in FIG.

  As shown in FIGS. 1 and 2, the SAW device according to the first embodiment includes a comb-shaped electrode 2 on which an upper surface of a substrate 1 is weighted by apodization, and reflectors 3 on both sides of the comb-shaped electrode 2. A protective film 4 covering at least the comb-shaped electrode 2 and the reflector 3 is provided. Further, the comb-shaped electrode 2 has a pad 5 for taking out an electric signal electrically connected to the comb-shaped electrode 2, and constitutes a SAW device.

  The substrate 1 is made of lithium niobate cut from a Y plate rotated several degrees around the X axis in the Z axis direction, and is a 5 ° YLN substrate whose rotation angle is 5 °.

  The comb electrode 2 is made of aluminum (hereinafter referred to as “Al”) or an Al alloy.

The protective film 4 is preferably made of silicon dioxide (hereinafter referred to as “SiO ₂ ”), and its upper surface has an uneven shape as shown in FIGS. The convex portion 4 a of the protective film 4 is provided above the portion having the comb-shaped electrode 2 on the upper surface of the substrate 1. Further, the concave portion 4 b of the protective film 4 is provided in a portion where the comb-shaped electrode 2 between the convex portions 4 a does not exist on the upper surface of the substrate 1 and its vicinity.

  Here, each of the convex portion 4a and the concave portion 4b of the protective film 4 is one pitch, the pitch width per pitch is L, the width of the convex portion 4a of the protective film 4 is L1, and the protective film 4 The width of the concave portion 4b is L2 (L = L1 + L2 is established). Similarly to the one pitch of the protective film 4, the portion between the electrode finger 2 a of one comb-shaped electrode 2 and the electrode finger 2 a adjacent to one side is defined as one pitch width p of the comb-shaped electrode 2. Furthermore, the width per electrode finger 2a is p1, and the width between adjacent electrode fingers is p2 (p = p1 + p2 holds).

  The height from the surface of the substrate 1 in contact with the protective film 4 to the concave portion 4b of the protective film 4 is t, and the thickness of the comb electrode 2 (from the surface of the substrate 1 to the top surface of the comb electrode 2) H).

  A manufacturing method of the SAW device configured as described above will be described below with reference to the drawings.

  FIG. 3 is a diagram for explaining a method for manufacturing a SAW device according to the first embodiment of the present invention. First, as shown in FIG. 3A, an electrode film 32 to be a comb electrode and a reflector is formed on the upper surface of the LN substrate 31 by a method such as vapor deposition or sputtering of Al or an Al alloy.

  Next, as shown in FIG. 3B, a resist film 33 is formed on the upper surface of the electrode film 32.

  Next, as shown in FIG. 3C, the resist film 33 is processed using an exposure / development technique or the like so as to have a desired shape.

  Next, as shown in FIG. 3D, the electrode film 32 is processed into a desired shape by using a dry etching technique or the like, and then the resist film 33 is removed.

Next, as shown in FIG. 3E, a protective film 34 is formed by a method such as vapor deposition or sputtering of SiO ₂ so as to cover the electrode film 32.

  Next, as shown in FIG. 3F, a resist film 35 is formed on the surface of the protective film 34.

  Next, as shown in FIG. 3G, the resist film 35 is processed into a desired shape using exposure, development techniques, and the like.

  Next, as shown in FIG. 3 (h), by using a dry etching technique or the like, a portion of the protective film 34 that does not require the protective film 34 such as the pad 36 for extracting an electric signal is removed, and then the resist film 35 is removed. To do.

  Finally, each was divided by dicing, and then mounted on a ceramic package by die bonding or the like. After wire bonding, the lid was welded and hermetically sealed.

In Embodiment 1 of the present invention, the shape of the electrode and the SiO ₂ film is as follows:
L1 ≦ p1 and L2 ≧ p2
(However, the relationship of L≈p, p1 + p2 = p, and L1 + L2 = L is satisfied).

As a method for obtaining a shape satisfying this relationship, a so-called bias sputtering method was used in which a film was formed by sputtering while applying a bias to the substrate side in forming the SiO ₂ film of FIG. At that time, the shape of the SiO ₂ film was controlled by changing the ratio of the bias applied to the substrate and the sputtering power.

In the first embodiment, in order to show how the shape of the SiO ₂ film can be used to obtain good characteristics even when a protective film is formed, the following four types of SAW devices (implementation) Example 1 and Comparative Examples 1-4) were prepared. Comparative Example 1 is a normal SAW device in which the normalized film thickness h / (2 × p) of the electrode is 4% and no SiO ₂ film is provided, and Comparative Example 2 is the normalized film thickness h / (2 × p) of the electrode. Is a normal SAW device having 4.5% and no SiO ₂ film, Comparative Example 3 has a normalized film thickness h / (2 × p) of 4% and the shape of the SiO ₂ film is “L1> p1 and LW <p2 (where L≈p, p1 + p2 = p, L1 + L2 = L is satisfied) ”, and Comparative Example 4 has a normalized electrode thickness h / (2 × p) of 4. 5% the shape of the SiO ₂ film "L1> p1 and L2 <p2 (However, L ≒ p, p1 + p2 = p, satisfies the relationship of L1 + L2 = L)" SAW device satisfies the relationship, the first embodiment of the electrode normalized film thickness h / (2 × p) the shape of the SiO ₂ film is "L1 ≦ p1 and L2 ≧ p2 (was in 4.5% To satisfy the relationship of L ≒ p, p1 + p2 = p, L1 + L2 = L) "is a SAW device satisfies the relationship. However, in the first embodiment, the normalized film thickness t / (2 × p) of the SiO ₂ film in all examples and comparative examples is set to 20%. 4 shows the sectional shape of Comparative Example 3, FIG. 5 shows the sectional shape of Comparative Example 4, FIG. 6 shows the sectional shape of Example 1, and FIG. 7 shows the electrical characteristics of each. At this time, the cross-sectional shape of the SAW device is obtained by coating the surface of the SAW device with metal and carbon, cutting the electrode in the SAW propagation direction by FIB (Focused Ion Beam), and observing it with an electron microscope. Identified.

As can be seen from FIG. 7, in Comparative Examples 1 and 2 in which no SiO ₂ film is provided, spurious due to Rayleigh waves and anti-resonant frequency cracking occur, and the characteristics are very poor. In both Comparative Examples 3 and 4, the shape of the SiO ₂ film satisfies the relationship of “L1> p1 and L2 <p2 (where L≈p, p1 + p2 = p, L1 + L2 = L are satisfied)” However, although spurious near the resonance frequency is not seen in Comparative Example 3, spurious is generated on the lower frequency side than the resonance frequency in Comparative Example 4, and the insertion loss at the resonance frequency is very poor. I understand. Further, in the case of Example 1 in which the shape of the SiO ₂ film satisfies the relationship “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p, L1 + L2 = L is satisfied)” Spurious is not seen. It can also be seen that the insertion loss of Comparative Examples 3 and 4 is greatly improved.

Next, the normalized film thickness h / (2 × p) of the electrode is 3% to 9%, and the shape of the SiO ₂ film is “L1> p1 and L2 <p2 (where L≈p, p1 + p2 = p, L1 + L2 = Satisfying the relationship of “L” (Comparative Example 5) and the normalized film thickness h / (2 × p) of the electrode is 4.5% to 9%, and the shape of the SiO ₂ film is “L1 ≦ p1” And L2 ≧ p2 (where L≈p, p1 + p2 = p, L1 + L2 = L is satisfied) (Embodiment 2) An L-type filter in which the SAW devices shown in FIG. FIG. 9 shows the temperature characteristics measured at the center frequency in the filter characteristics. At this time, the inter-electrode pitch p shown in FIG. 2 is adjusted so that the resonance frequency of the SAW devices arranged in series matches the anti-resonance frequency of the SAW devices arranged in parallel.

From FIG. 9, when the shape of the SiO ₂ film satisfies the relationship of “L1> p1 and L2 <p2 (where L≈p, p1 + p2 = p, L1 + L2 = L)”, the electrode film thickness h is It can be seen that the temperature characteristics deteriorate as the thickness increases. However, when the shape of the SiO ₂ film is “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p, L1 + L2 = L is satisfied)”, the temperature characteristics are increased even when the electrode film thickness h is increased. Can be seen to remain good. In particular, it can be seen that the greater the electrode film thickness, the greater the effect.

As described above, the electrode normalized film thickness h / (2 × p) ≧ 4.5%, and the shape of the SiO ₂ film is “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p It was found that when the protective film was formed by satisfying the relationship of “L1 + L2 = L”, the temperature characteristics were good and good characteristics were obtained.

In the first embodiment, Al or an Al alloy is used as the electrode film, but the electrode film is not limited to these, and even when a metal heavier than Al, such as Cu, W, Ag, Au, is used, SiO 2 ₂ The shape of the film satisfies the relationship of “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p, L1 + L2 = L)”, and further, the electrode is heavy, so that the electrode film is made of Al. The same effect can be obtained by reducing the amount of SiO ₂ film present on the electrode as compared with the case of using it, that is, by reducing the ratio of L1 to p1 as compared with the case of using Al for the electrode.

In addition, although the SiO ₂ film is used as the protective film, the protective film is not limited to this, and the shape of the dielectric film can also be used when other dielectric films such as SiN, SiON, Ta ₂ O ₅ , TeO ₂ are used. It goes without saying that the same effect can be obtained if the above conditions are satisfied.

  In the first embodiment, the comb-shaped electrode 2 is weighted by apodization, but this weighting ratio (the ratio of the crossing widths at both ends of the comb-shaped electrode 2 and the weight of the central portion of the comb-shaped electrode 2 is performed. The (non-region) is not limited to FIG. Further, the number of comb electrodes 2 and the number of reflectors arranged on both sides of the comb electrodes 2 are not limited to those shown in FIG.

  Further, although bias sputtering is used in the first embodiment as a shape forming method, this is not limited to this method.

(Embodiment 2)
Hereinafter, a SAW device according to Embodiment 2 of the present invention will be described with reference to the drawings.

  A SAW device similar to the SAW device used in Embodiment 1 was used as the SAW device in Embodiment 2, and the filter shown in FIG. 8 was produced. Therefore, the structure and the creation method are the same as those shown in FIGS. 1, 2 and 3, and the description thereof is omitted.

In the second embodiment, in order to show the relationship between the SiO ₂ film thickness and the temperature characteristics, four types of SAW devices having different SiO ₂ film thickness t were prepared, and the temperature characteristics with respect to the SiO ₂ film thickness are shown in FIG. . However, the SAW device according to the second embodiment satisfies the relationship of “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p, L1 + L2 = L)”, and the electrode standard The film thickness h / (2 × p) was 4.5%.

FIG. 10 shows that the temperature characteristics improve as the normalized film thickness of SiO ₂ increases. Further, it can be seen that when the normalized film thickness of SiO ₂ reaches 30%, a nearly zero temperature coefficient can be realized. Therefore, the inventors have found that the temperature characteristics are good and good characteristics can be obtained by making the SiO ₂ film thickness so as to satisfy the relationship of t / (2 × p) ≦ 30%.

(Embodiment 3)
Hereinafter, a SAW device according to Embodiment 3 of the present invention will be described with reference to the drawings.

  A SAW device similar to the SAW device used in the first embodiment is used as the SAW device in the third embodiment. Therefore, the structure and the creation method are the same as those shown in FIGS. 1, 2 and 3, and the description thereof is omitted. The SAW device according to the third embodiment also satisfies the relationship “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p, and L1 + L2 = L are satisfied)”. However, in Embodiment 3, the normalized film thickness h / (2 × p) of the electrodes in all Examples and Comparative Examples was 4.5%.

In the third embodiment, in order to show the relationship between the cut-out angle D ° of the substrate 1 and the electromechanical coupling coefficient of the SAW device on which the protective film having the shape shown in the first embodiment is formed, SAW devices are manufactured using six different types of substrates, and FIG. 11 shows the relationship between the cut-out angle and the electromechanical coupling coefficient. Example 3 has D ° = 5 °, Example 4 has D ° = 15 °, Comparative Example 6 has D ° = 41 °, and Comparative Example 7 has D ° = 64 °. Comparative Example 8 is a SAW device with D ° = 64 ° without an SiO ₂ film. From FIG. 11, the coupling coefficient is about 11% when the cutting angle is 41 ° and the coupling coefficient is about 5.5% when the cutting angle is 64 °. An electromechanical coupling coefficient with a very large coefficient is realized. Further, as Comparative Example 8, an electromechanical coupling coefficient of D ° = 64 ° in which no SiO ₂ film is provided is shown in the figure, but in order to make this value or more, it can be realized if at least D ≦ 25 °. . Accordingly, the inventors produce the lithium niobate substrate so that the cutting angle of the lithium niobate substrate satisfies the relationship of 0 ° ≦ D ° ≦ 25 ° when the rotation angle in the Z-axis direction around the X-axis is D °. As a result, it was found that the temperature characteristics are good and a large electromechanical coupling coefficient can be obtained.

(Embodiment 4)
Hereinafter, a SAW device according to Embodiment 4 of the present invention will be described with reference to the drawings.

  The substrate 1 of the SAW device used in the first embodiment is made of lithium niobate cut out from a Y plate rotated several degrees around the X axis in the Z axis direction, and the rotation angle is 5 °. The SAW device according to the fourth embodiment is a 5 ° YLN substrate that is cut out from the Y plate rotated several degrees around the X axis in the Z axis direction as the substrate 1, and the rotation angle is 5 °. And a silicon substrate are used. Other than this substrate 1, the same one is used. As for the method of joining the LN substrate and the silicon substrate, it is possible to use a direct joining technique or an adhesive.

  The SAW device according to the fourth embodiment also satisfies the relationship “L1 ≦ p1 and L2 ≧ p2 (where L≈p, p1 + p2 = p, and L1 + L2 = L are satisfied)”. In the fourth embodiment, two types of SAW devices are manufactured in order to show the relationship of temperature characteristics depending on the presence / absence of bonding of silicon substrates. FIGS. 12 and 13 show −35 ° C., 25 ° C., and + 85 ° C., respectively. The electrical characteristics measured at the temperature are shown. FIG. 12 shows characteristics when the substrate 1 uses a 5 ° YLN substrate as Comparative Example 9. Further, FIG. 13 shows characteristics when the substrate 1 is a bonded substrate of a 5 ° YLN substrate and a silicon substrate as Example 5. From FIG. 12 and FIG. 13, the frequency variation with respect to the temperature when the substrate 1 uses the bonded substrate of the 5 ° YLN substrate and the silicon substrate is different from the frequency variation with respect to the temperature when the substrate is using the 5 ° YLN substrate. I understand that it is small. The temperature characteristic calculated from the antiresonance frequency in each characteristic is about −33 ppm / K when the substrate 1 is a 5 ° YLN substrate, whereas the substrate 1 is a bonded substrate of a 5 ° YLN substrate and a silicon substrate. It can be seen that there is a significant improvement of −10 ppm / K. Therefore, the inventors have found that good temperature characteristics and electrical characteristics can be obtained by using a bonded substrate of an LN substrate and a silicon substrate as the substrate.

  In this embodiment, the thickness of the LN substrate is not mentioned, but it goes without saying that the temperature characteristic can be further improved by polishing and thinning the LN substrate and bonding it to the silicon substrate. Yes.

(Embodiment 5)
In the present embodiment, a mobile phone will be described as an example of an electronic device.

  FIG. 14 is a schematic view of a mobile phone according to Embodiment 5 of the present invention, and FIG. 15 is an electric circuit diagram of a main part in FIG. As shown in FIG. 15, the cellular phone of the fifth embodiment has an antenna 151 and an antenna duplexer 152 connected to the antenna 151. The antenna duplexer 152 includes a transmission SAW filter 153, a reception SAW filter 154, and a phase shift circuit 155.

  The SAW filter for transmission 153 and the SAW filter for reception 154 in the fifth embodiment are obtained by connecting the SAW devices described in the first embodiment in a plurality of stages in series and parallel. FIG. 16 shows electrical characteristics of a WCDMA antenna duplexer using the transmission SAW filter 153 and the reception SAW filter 154. In the band (transmission side: 1920 MHz to 1980 MHz and reception side: 2110 MHz to 2170 MHz), a good insertion loss of about −1.5 dB is realized, and further, a stop band (transmission side: 2110 MHz to 2170 MHz, reception side: 1920 MHz to 1980 MHz), it can be seen that a good attenuation of about −60 dB is realized. Thus, by using the SAW device described in the first embodiment, it is possible to easily obtain an antenna duplexer having excellent temperature characteristics and electrical characteristics.

  As described above, according to the present invention, the protective film is formed so as to cover the electrode formed on the substrate, and the shape and thickness of the protective film are set within a specific range, whereby the temperature characteristics and electrical characteristics are set. An electronic component having excellent characteristics can be obtained.

The top view which shows the structure of the electronic component in Embodiment 1 of this invention. Sectional drawing of the A part of FIG. 1 of the electronic component in Embodiment 1 of this invention The figure explaining the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing of the electronic component in Embodiment 1 of this invention Sectional drawing of the electronic component in Embodiment 1 of this invention Sectional drawing of the electronic component in Embodiment 1 of this invention The figure which shows the electrical property of the electronic component in Embodiment 1 of this invention The figure which shows the structure of the electronic component in Embodiment 1 of this invention. The figure which shows the structure of the electronic component in Embodiment 1 of this invention, and the relationship of a temperature characteristic The figure which shows the structure of the electronic component in Embodiment 2 of this invention, and the relationship of a temperature characteristic The figure which shows the electrical property of the electronic component in Embodiment 3 of this invention The figure which shows the electrical property of the electronic component in Embodiment 4 of this invention The figure which shows the electrical property of the electronic component in Embodiment 4 of this invention Overview of electronic device according to Embodiment 5 of the present invention Electric circuit diagram of the principal part inside the electronic equipment in Embodiment 5 of the present invention The figure which shows the electrical property of the electronic component in Embodiment 5 of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Comb electrode 2a Electrode finger 3 Reflector 4 Protective film 4a Convex part of protective film 4b Concave part of protective film 5 Pad 31 Substrate 32 Electrode film 33 Resist film 34 Protective film 35 Resist film 36 Pad 81 Substrate 82 Protective film 83 SAW device of Example 1 connected in series 84 SAW device of Example 1 connected in parallel 85 Input terminal 86 Output terminal 87 Ground terminal 88 Line 141 Antenna 151 Antenna 152 Antenna duplexer 153 Transmission filter 154 Reception filter 155 Phase circuit

Claims (7)

A substrate, a comb electrode provided on the upper surface of the substrate, and a protective film covering the comb electrode and having a concavo-convex shape on the top surface,
When the rotation angle in the Z-axis direction around the X axis is D °,
0 ° ≦ D ° ≦ 25 °
A lithium niobate substrate cut from the Y plate of
The comb-shaped electrode is made of aluminum, an alloy containing aluminum as a main component, or a metal heavier than aluminum,
In addition, the pitch width per pitch of the comb-shaped electrodes is p, the width per electrode finger constituting the comb-shaped electrodes is p1, the width between the electrode fingers is p2, and from the substrate surface to the upper part of the comb-shaped electrodes When the thickness of the comb electrode defined by the height of h is h, and the thickness of the protective film defined by the height from the substrate surface to the recess of the protective film is t,
9% ≧ h / (2 × p) ≧ 4.5% (provided that p1 + p2 = p is satisfied)
And
The pitch width per pitch of the concavo-convex shape of the protective film is L, the width of the convex portion per pitch of the concavo-convex shape of the protective film is L1, the width of the concave portion is L2, and the pitch per pitch of the comb electrode When the width is p, the width per electrode finger constituting the comb electrode is p1, and the width between the electrode fingers is p2,
L1 ≦ p1 and L2 ≧ p2
(However, to satisfy the relationship of p1 + p2 = p, L1 + L2 = L) der is,
In the case where a metal heavier than aluminum is used for the comb electrode, an electronic component in which L1 is smaller than p1 . The electronic component according to claim 1, wherein the comb electrode is made of aluminum or an alloy containing aluminum as a main component. The electronic component according to claim 1, wherein a silicon substrate is bonded to the substrate. When the thickness of the protective film defined by the height from the substrate surface to the recess of the protective film is t,
t / (2 × p) ≦ 30%
The electronic component according to claim 1, wherein The electronic component according to claim 1, wherein the protective film is silicon dioxide. The pitch width per pitch of the concavo-convex shape of the protective film is L, the width of the convex portion per pitch of the concavo-convex shape of the protective film is L1, the width of the concave portion is L2, and the pitch width per pitch of the comb-shaped electrode P, the width per electrode finger constituting the comb electrode is p1, and the width between the electrode fingers is p2,
L1 ≦ p1 and L2 ≧ p2
2. The method of manufacturing an electronic component according to claim 1, wherein a bias sputtering method is used as a method of obtaining a shape satisfying a relationship of (where p1 + p2 = p and L1 + L2 = L are satisfied). An electronic apparatus having at least one antenna and an electric circuit electrically connected to the antenna, wherein the electric circuit includes a plurality of electronic components, and at least one of the plurality of electronic components is defined in claim 1. The electronic device which is an electronic component as described in.

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