JP2007221416A5 - - Google Patents

Download PDF

Info

Publication number
JP2007221416A5
JP2007221416A5 JP2006039001A JP2006039001A JP2007221416A5 JP 2007221416 A5 JP2007221416 A5 JP 2007221416A5 JP 2006039001 A JP2006039001 A JP 2006039001A JP 2006039001 A JP2006039001 A JP 2006039001A JP 2007221416 A5 JP2007221416 A5 JP 2007221416A5
Authority
JP
Japan
Prior art keywords
width
pitch
comb
electrode
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006039001A
Other languages
Japanese (ja)
Other versions
JP5025963B2 (en
JP2007221416A (en
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006039001A external-priority patent/JP5025963B2/en
Priority to JP2006039001A priority Critical patent/JP5025963B2/en
Priority to KR1020107001186A priority patent/KR100979952B1/en
Priority to PCT/JP2007/052631 priority patent/WO2007094368A1/en
Priority to KR1020087014499A priority patent/KR100961481B1/en
Priority to CN2007800048973A priority patent/CN101379700B/en
Priority to US12/279,631 priority patent/US8035460B2/en
Priority to EP07714184A priority patent/EP1971026A1/en
Publication of JP2007221416A publication Critical patent/JP2007221416A/en
Publication of JP2007221416A5 publication Critical patent/JP2007221416A5/ja
Publication of JP5025963B2 publication Critical patent/JP5025963B2/en
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (9)

基板と、この基板の上面に設けた櫛型電極と、この櫛型電極を覆うとともに天面に凹凸形状を有する保護膜とを備え、
前記基板は、X軸周りにZ軸方向への回転角度をD°とした場合、
0°≦D°≦25°
のY板から切り出されたニオブ酸リチウム基板であり、
かつ前記櫛型電極の1ピッチあたりのピッチ幅をp、前記櫛型電極を構成する電極指1本あたりの幅をp1、前記電極指間の幅をp2、基板表面から前記櫛型電極上部までの高さで定義される櫛型電極の厚さをhとしたとき、
h/(2×p)≧4.5%(ただし、p1+p2=pの関係を満たす)
ある電子部品。
A substrate, a comb electrode provided on the upper surface of the substrate, and a protective film that covers the comb electrode and has a concavo-convex shape on the top surface,
When the rotation angle in the Z-axis direction around the X axis is D °,
0 ° ≦ D ° ≦ 25 °
A lithium niobate substrate cut from the Y plate of
The pitch width per pitch of the comb-shaped electrodes is p, the width per electrode finger constituting the comb-shaped electrodes is p1, the width between the electrode fingers is p2, and from the substrate surface to the top of the comb-shaped electrodes When the thickness of the comb electrode defined by the height of h is h,
h / (2 × p) ≧ 4.5% (however, p1 + p2 = p is satisfied)
Is an electronic component.
共振周波数よりも低周波側のスプリアスを抑制するように、前記保護膜の凹凸形状を形成した請求項1に記載の電子部品。2. The electronic component according to claim 1, wherein the protective film has a concavo-convex shape so as to suppress spurious frequencies on a lower frequency side than a resonance frequency. 前記櫛型電極がアルミニウムもしくはアルミニウムを主成分とする合金からなる請求項1に記載の電子部品。 The electronic component according to claim 1, wherein the comb-shaped electrode is made of aluminum or an alloy containing aluminum as a main component. 前記保護膜の凹凸形状の1ピッチあたりのピッチ幅をL、前記保護膜の凹凸形状の1ピッチあたりの凸部の幅をL1、凹部の幅をL2、前記櫛型電極の1ピッチあたりのピッチ幅をp、前記櫛型電極を構成する電極指1本あたりの幅をp1、前記電極指間の幅をp2としたとき、
L1≦p1かつL2≧p2
(ただし、p1+p2=p、L1+L2=Lの関係を満たす)である請求項1に記載の電子部品。
The pitch width per pitch of the irregular shape of the protective film L, the width of the convex portions per pitch of the uneven shape of the protective film L1, the width of the recess L2, the pitch per one pitch of the comb-shaped electrode When the width is p, the width per electrode finger constituting the comb electrode is p1, and the width between the electrode fingers is p2,
L1 ≦ p1 and L2 ≧ p2
The electronic component according to claim 1, wherein p1 + p2 = p and L1 + L2 = L are satisfied.
基板は、ニオブ酸リチウム基板とシリコン基板との接合基板である請求項1に記載の電子部品。 The electronic component according to claim 1, wherein the substrate is a bonded substrate of a lithium niobate substrate and a silicon substrate. 基板表面から前記保護膜の凹部までの高さで定義される保護膜の厚さをtとしたとき、
t/(2×p)≦30%
である請求項1に記載の電子部品。
When the thickness of the protective film defined by the height from the substrate surface to the recess of the protective film is t,
t / (2 × p) ≦ 30%
The electronic component according to claim 1, wherein
保護膜は二酸化シリコンである請求項1に記載の電子部品。 The electronic component according to claim 1, wherein the protective film is silicon dioxide. 保護膜の凹凸形状の1ピッチあたりのピッチ幅をL、前記保護膜の凹凸形状の1ピッチあたりの凸部の幅をL1、凹部の幅をL2、前記櫛型電極の1ピッチあたりのピッチ幅をp、前記櫛型電極を構成する電極指1本あたりの幅をp1、前記電極指間の幅をp2としたとき、
L1≦p1かつL2≧p2
(ただし、p1+p2=p、L1+L2=Lの関係を満たす)の関係を満たす形状を得る方法として、バイアススパッタリング法を用いたことを特徴とする請求項1に記載の電子部品の製造方法。
The pitch width per pitch of the concavo-convex shape of the protective film is L, the width of the convex portion per pitch of the concavo-convex shape of the protective film is L1, the width of the concave portion is L2, and the pitch width per pitch of the comb-shaped electrode P, the width per electrode finger constituting the comb electrode is p1, and the width between the electrode fingers is p2,
L1 ≦ p1 and L2 ≧ p2
2. The method of manufacturing an electronic component according to claim 1, wherein a bias sputtering method is used as a method of obtaining a shape satisfying a relationship of (where p1 + p2 = p and L1 + L2 = L are satisfied).
少なくとも1つのアンテナと、このアンテナに電気的に接続する電気回路とを有する電子機器であって、前記電気回路は複数の電子部品を備え、この複数の電子部品の少なくとも一つは、請求項1に記載の電子部品である電子機器。 An electronic apparatus having at least one antenna and an electric circuit electrically connected to the antenna, wherein the electric circuit includes a plurality of electronic components, and at least one of the plurality of electronic components is defined in claim 1. The electronic device which is an electronic component as described in.
JP2006039001A 2006-02-16 2006-02-16 Electronic component, method for manufacturing the same, and electronic device using the electronic component Active JP5025963B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006039001A JP5025963B2 (en) 2006-02-16 2006-02-16 Electronic component, method for manufacturing the same, and electronic device using the electronic component
CN2007800048973A CN101379700B (en) 2006-02-16 2007-02-14 Surface acoustic wave device, and manufacturing method thereof
PCT/JP2007/052631 WO2007094368A1 (en) 2006-02-16 2007-02-14 Surface acoustic wave device, surface acoustic wave filter employing same and antenna duplexer, and electronic apparatus employing same
KR1020087014499A KR100961481B1 (en) 2006-02-16 2007-02-14 Surface acoustic wave device, surface acoustic wave filter employing same and antenna duplexer, and electronic apparatus employing same
KR1020107001186A KR100979952B1 (en) 2006-02-16 2007-02-14 Surface acoustic wave device, surface acoustic wave filter employing same and antenna duplexer, and electronic apparatus employing same
US12/279,631 US8035460B2 (en) 2006-02-16 2007-02-14 Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same
EP07714184A EP1971026A1 (en) 2006-02-16 2007-02-14 Surface acoustic wave device, surface acoustic wave filter employing same and antenna duplexer, and electronic apparatus employing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006039001A JP5025963B2 (en) 2006-02-16 2006-02-16 Electronic component, method for manufacturing the same, and electronic device using the electronic component

Publications (3)

Publication Number Publication Date
JP2007221416A JP2007221416A (en) 2007-08-30
JP2007221416A5 true JP2007221416A5 (en) 2010-04-15
JP5025963B2 JP5025963B2 (en) 2012-09-12

Family

ID=38498190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006039001A Active JP5025963B2 (en) 2006-02-16 2006-02-16 Electronic component, method for manufacturing the same, and electronic device using the electronic component

Country Status (2)

Country Link
JP (1) JP5025963B2 (en)
CN (1) CN101379700B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476991B2 (en) 2007-11-06 2013-07-02 Panasonic Corporation Elastic wave resonator, elastic wave filter, and antenna sharing device using the same
CN101842981B (en) * 2007-11-06 2013-12-11 松下电器产业株式会社 Elastic wave resonator, elastic wave filter, and antenna sharing device using the same
CN104935288B (en) * 2010-02-22 2018-08-03 天工滤波方案日本有限公司 Notch diplexer
WO2011142183A1 (en) * 2010-05-10 2011-11-17 株式会社村田製作所 Surface acoustic wave device
JPWO2012102131A1 (en) * 2011-01-27 2014-06-30 京セラ株式会社 Elastic wave device and elastic wave device using the same
CN104333341B (en) * 2014-11-14 2018-01-09 中国电子科技集团公司第二十六研究所 SAW device resists 300 DEG C of high temperature stripping means
KR102107393B1 (en) * 2016-06-28 2020-05-07 가부시키가이샤 무라타 세이사쿠쇼 Seismic device
CN110196277A (en) * 2019-06-17 2019-09-03 宁海县浙工大科学技术研究院 A kind of new type of SAW moisture sensor
CN110601672A (en) * 2019-08-05 2019-12-20 北京中讯四方科技股份有限公司 High-temperature-stability surface acoustic wave filter and preparation method and application thereof
CN112653417A (en) * 2020-12-18 2021-04-13 广东广纳芯科技有限公司 Surface acoustic wave resonator and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260213A (en) * 1986-09-12 1988-10-27 Hiroshi Shimizu Resonator using high coupling love wave type saw substrate
JPH1084245A (en) * 1996-09-10 1998-03-31 Hitachi Ltd Surface acoustic wave element
JP3880150B2 (en) * 1997-06-02 2007-02-14 松下電器産業株式会社 Surface acoustic wave device
JPH1188100A (en) * 1997-09-03 1999-03-30 Toyo Commun Equip Co Ltd Surface acoustic wave device
JP4109877B2 (en) * 2001-03-04 2008-07-02 和彦 山之内 Surface acoustic wave functional element
JP2002314365A (en) * 2001-04-17 2002-10-25 Hitachi Ltd Surface acoustic wave resonator having desired bandwidth ratio and method of manufacturing the same
JP4305173B2 (en) * 2002-12-25 2009-07-29 パナソニック株式会社 Electronic component and electronic device using the electronic component
JP2004254291A (en) * 2003-01-27 2004-09-09 Murata Mfg Co Ltd Acoustic surface wave device

Similar Documents

Publication Publication Date Title
JP2007221416A5 (en)
US10958238B2 (en) Elastic wave device
JP5747987B2 (en) Elastic wave device
JP6710161B2 (en) Elastic wave device
JP2018207524A (en) Acoustic wave device and electronic component
WO2020087566A1 (en) Hybrid acoustic wave resonator and preparation method therefor
US20120032759A1 (en) Acoustic Wave Device and Method for Manufacturing Same
JP4569447B2 (en) Surface acoustic wave element and surface acoustic wave device
JP4645957B2 (en) Surface acoustic wave element and surface acoustic wave device
JP2011188255A (en) Acoustic wave device
JP2006295311A (en) Surface acoustic wave element chip and surface acoustic wave device
US8477483B2 (en) Electronic component and method for manufacturing electronic component
JP2007028538A (en) Surface acoustic wave device
JP5398561B2 (en) Elastic wave device and manufacturing method thereof
JP5815383B2 (en) Elastic wave device and elastic wave device using the same
JP4375037B2 (en) Surface acoustic wave device
JP5688149B2 (en) Electronic component having an acoustic wave device
JP2011244065A (en) Manufacturing method of elastic surface acoustic wave device
CN111527697B (en) Elastic wave device and elastic wave module
JP6570388B2 (en) Piezoelectric vibrator element and piezoelectric vibrator
JP2011023929A (en) Acoustic wave device and electronic apparatus using the same
JP5338575B2 (en) Elastic wave device and electronic device using the same
JP2015012428A (en) Acoustic wave device, electronic component module, and mobile terminal
JP2007053670A (en) Elastic boundary wave element
JP2021027383A (en) Elastic wave device