JP2015012428A - Acoustic wave device, electronic component module, and mobile terminal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an acoustic wave device capable of improving adhesion of a bump, and to provide an electronic component module and a mobile terminal.SOLUTION: An acoustic wave device 1 includes: a piezoelectric substrate 2; an excitation electrode 3 positioned on the piezoelectric substrate 2; an electrode pad positioned on the piezoelectric substrate 2 and electrically connected to the excitation electrode 3; a frame 5 which is positioned on the piezoelectric substrate 2 and surrounds the excitation electrode 3 inside and on the outside of which the electrode pad is positioned; a side surface conductor part 6 positioned on the outer surface of the frame 5 and made of a conductor material; a lid 7 mounted on the frame 5; and a bump 8 electrically connected to the electrode pad and being in contact with the side surface conductor part 6.

Description

  The present invention relates to an acoustic wave device, an electronic component module, and a mobile terminal.

  2. Description of the Related Art Conventionally, an acoustic wave device is known in which an inter-transducer (hereinafter simply referred to as an IDT electrode) is formed on a piezoelectric substrate as an excitation electrode. This IDT electrode is used as a filter for obtaining a specific frequency by utilizing the characteristic that can convert an electric signal and a surface acoustic wave into each other.

  In a duplexer used for a mobile terminal such as a cellular phone, conventionally, a dielectric filter has been mainly used. However, in recent years, a high-performance elastic wave device that can be reduced in size and weight has been installed. It has become. In a mobile terminal, an electric signal transmitted / received from an antenna unit is filtered into a reception signal and a transmission signal by a duplexer.

  In recent years, it is necessary to reduce the height of a duplexer as the mobile terminal is miniaturized. Therefore, it is essential to reduce the height of the elastic wave device to reduce the height of the duplexer. As a structure for reducing the height of an acoustic wave device, for example, a wafer level package (hereinafter simply referred to as WLP) structure is known (see, for example, Patent Document 1). Also, an elastic wave device is known in which an elastic wave device having a WLP structure is mounted only by bumps without providing columnar electrodes as an elastic wave device with a further reduced height (for example, see Patent Document 2).

JP 2010-56671 A JP 2009-105528

  By the way, since the acoustic wave device having a further reduced WLP structure is mounted on the mounting substrate via the bump, the adhesion of the acoustic wave device to the bump is improved in order to prevent the acoustic wave device from being peeled off from the mounting substrate. Is one of the challenges.

  The present invention has been conceived under the above-described circumstances, and an object thereof is to provide an elastic wave device and a mobile terminal capable of improving adhesion to a bump.

  An acoustic wave device according to the present invention includes a piezoelectric substrate, an excitation electrode positioned on the piezoelectric substrate, an electrode pad positioned on the piezoelectric substrate and electrically connected to the excitation electrode, and the piezoelectric substrate. And a frame body that surrounds the excitation electrode on the inner side and the electrode pad is positioned on the outer side, a side conductor portion that is located on the outer surface of the frame body and is made of a conductive material, and is placed on the frame body And a bump that is electrically connected to the electrode pad and is in contact with the side conductor portion.

  The elastic wave device according to the present invention is an elastic wave device mounted on a mounting substrate via bumps, and includes a piezoelectric substrate, an excitation electrode positioned on the piezoelectric substrate, and a position on the piezoelectric substrate. An electrode pad that is in contact with the bump and electrically connected to the excitation electrode; a frame that is located on the piezoelectric substrate, surrounds the excitation electrode on the inside, and has the electrode pad on the outside; A side conductor portion made of a conductive material, which is located on the outer surface of the frame and is in contact with the bumps, and a lid placed on the frame.

  The electronic component module of the present invention includes the above acoustic wave device and a mounting substrate having a mounting pad on which the bump is mounted.

  Furthermore, the mobile terminal of the present invention includes the electronic component module described above and an antenna unit that is electrically connected to the acoustic wave device.

  ADVANTAGE OF THE INVENTION According to this invention, the elastic wave apparatus, electronic component module, and mobile terminal which can improve adhesiveness with a bump can be provided.

1 is an external plan view of a SAW device according to an embodiment of the present invention. FIG. 2 is a plan view of the SAW device of FIG. 1 when a lid is removed. FIG. 3 is an enlarged plan view of a part of the SAW device of FIG. 2. This corresponds to a cross section when the SAW device of FIG. 1 is cut along line II. FIG. 5 is an enlarged cross-sectional view of a part of the SAW device of FIG. 4. FIG. 2 is a cross-sectional view when the SAW device of FIG. 1 is mounted on a mounting substrate, and corresponds to a cross-section when cut along line II in FIG. 1. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. FIG. 9 is a plan perspective view showing a modification of the SAW device of FIG. 1 as viewed from above. FIG. 9 shows a modification of the SAW device of FIG. 1, and shows an enlarged cross section when cut along line II in FIG. 1. As a modification of the SAW device of FIG. 1, an acoustic wave element having a configuration without a bump of the SAW device is shown, which corresponds to an enlarged cross section taken along line II in FIG.

  Hereinafter, a SAW device according to an embodiment of the present invention will be described with reference to the drawings. Note that the drawings used in the following description are schematic, and the dimensional ratios and the like on the drawings do not necessarily match the actual ones.

<Configuration of SAW device, etc.>
A SAW device according to an embodiment of the present invention will be described below. As shown in FIGS. 1 to 6, the SAW device 1 according to this embodiment includes a piezoelectric substrate 2, excitation electrodes 3, electrode pads 4, a frame body 5, side conductor portions 6, a lid body 7, and bumps 8. Yes.

  The SAW device 1 can form each configuration at the wafer level. The SAW device 1 has a function of filtering an electric signal exchanged between an antenna unit and a signal arithmetic circuit (for example, IC) in a mobile terminal.

  The SAW device 1 has a plurality of electrode pads 4, and signals are input via any one of the electrode pads 4. The input signal is filtered by the excitation electrode 3 or the like. Then, the SAW device 1 outputs the filtered signal through the electrode pads 4 other than the electrode pad 4 in which the input signal is entered among the plurality of electrode pads 4.

  The piezoelectric substrate 2 is composed of a single crystal substrate having piezoelectricity, such as a lithium tantalate single crystal, a lithium diobate single crystal, or a lithium tetraborate single crystal. The piezoelectric substrate 2 is formed in a rectangular parallelepiped shape, for example, and has a first main surface 2A and a second main surface 2B which are rectangular and parallel to each other and are flat. The size of the piezoelectric substrate 2 may be set appropriately. The thickness of the piezoelectric substrate 2 can be set to, for example, 0.2 mm or more and 0.5 mm or less. The length of one side of the piezoelectric substrate 2 can be set to 0.6 mm or more and 3 mm or less, for example.

  As shown in FIG. 3, the excitation electrode 3 is formed in a layer shape (flat plate shape) on the first main surface 2 </ b> A. The excitation electrode 3 is a so-called IDT and includes two comb-shaped electrodes 9. Each comb-like electrode 9 has a bus bar 9a extending in the propagation direction of the surface acoustic wave in the piezoelectric substrate 2, and a plurality of electrode fingers 9b extending from the bus bar 9a in a direction perpendicular to the propagation direction. The two comb-like electrodes 9 are provided such that the electrode fingers 9b are engaged with each other. In addition, although the excitation electrode 3 illustrated in FIG. 3 is not essential, it is a case where it has the reflector 9c.

  FIG. 3 is a schematic diagram showing a comb-like electrode 9 having several electrode fingers 9b. Actually, a comb-like electrode 9 having a larger number of electrode fingers 9b may be provided. A plurality of excitation electrodes 3 may constitute a ladder-type SAW filter connected by direct connection or parallel connection. Further, the plurality of excitation electrodes 3 may constitute a double mode SAW resonator filter in which the plurality of excitation electrodes 3 are arranged in one direction.

  As shown in FIG. 2 and the like, the electrode pad 4 is formed in layers on the first main surface 2A. What is necessary is just to set the planar view shape of the electrode pad 4 suitably. In the present embodiment, the electrode pad 4 has a circular shape. What is necessary is just to set suitably the number and arrangement position of the electrode pad 4 according to the structure of the filter comprised by the excitation electrode 3. FIG.

  The excitation electrode 3 and the electrode pad 4 are electrically connected by wiring 10 as shown in FIG. The wiring 10 is formed in a layered manner on the first main surface 2A, and electrically connects the bus bar 9a of the excitation electrode 3 and the electrode pad 4. Note that the wiring 10 does not need to be formed on the first main surface 2A, and for example, there may be a portion that three-dimensionally intersects via an insulator.

  Excitation electrode 3, electrode pad 4, and wiring 10 (portion formed on first main surface 2A) can be formed by the same manufacturing process. Therefore, the excitation electrode 3, the electrode pad 4, and the wiring 10 are made of, for example, the same conductive material. As the conductive material, for example, an Al alloy such as an Al—Cu alloy can be used. Moreover, the excitation electrode 3, the electrode pad 4, and the wiring 10 are set to the same film thickness, for example. These thicknesses can be set to, for example, 100 nm or more and 500 nm or less.

  Although the bumps 8 may be provided directly on the electrode pads 4, a connection reinforcing layer 11 may be formed as shown in FIGS. The connection reinforcing layer 11 has, for example, a Ni layer superimposed on an Al—Cu alloy layer and an Au layer superimposed on the Ni layer.

  More specifically, the connection reinforcing layer 11 may be a layer in which an Al—Cu alloy, Cr, Ni, and Au are laminated in order from the electrode pad 4 side. The Cr layer has a thickness of, for example, 5 nm to 15 nm, the Ni layer has a thickness of, for example, 950 nm to 1100 nm, and the Au layer has a thickness of, for example, 90 nm to 110 nm. By having the connection reinforcing layer 11, the thickness of the electrode pad 4 can be increased, so that the electrode pad 4 can be made difficult to peel off from the piezoelectric substrate 2.

  As shown in FIGS. 4 and 5, the connection reinforcing layer 11 may be provided so as to cover the end portion of the electrode pad 4, or may be provided only on the upper surface of the electrode pad 4 so as not to cover it. When it is provided so as to cover the end portion of the electrode pad 4, the adhesiveness with the bump 8 can be maintained even when the bump 8 wraps around the side of the electrode pad 4.

  The frame 5 is formed so as to be positioned on the piezoelectric substrate 2. The frame 5 is disposed so that the excitation electrode 3 is surrounded on the inner side and the electrode pad 4 is positioned on the outer side. In other words, the electrode pad 4 is disposed outside the frame body 5 in order to be electrically connected to the excitation electrode 3 surrounded by the frame body 5 from the outside of the frame body 5. The frame 5 is formed so as to be thicker than the thickness of the excitation electrode 3. The thickness of the excitation space Sp is roughly determined by the thickness of the frame body 5. The excitation space Sp refers to a space surrounded by the piezoelectric substrate 2, the frame body 5, and the lid body 7. The thickness of the frame 5 is set to, for example, several μm or more and 30 μm or less.

  The lid body 7 is placed on the frame body 5. The frame body 5 and the lid body 7 may be integrally formed with the same material, or may be formed as separate bodies with different materials. In the present embodiment, the same material is formed as a separate body. The lid 7 can be set so that the thickness is, for example, several μm or more and 30 μm or less. The lid body 7 can be formed in a shape such that the shape in plan view is equal to or less than the outer periphery of the frame body 5.

  The frame 5 and the lid 7 are made of a photosensitive resin. As the photosensitive resin, for example, urethane acrylate, polyester acrylate, and epoxy acrylate resins that are cured by radical polymerization of an acrylic group, a methacryl group, or the like can be used. As other materials, for example, a polyimide resin can be used.

  As shown in FIG. 5, the side conductor portion 6 is located on the outer surface 5 </ b> A of the frame body 5. The side conductor portion 6 is made of a conductor material. The conductor material is selected in consideration of the adhesion with the bumps 8. Specifically, for example, a Cu—Ni alloy can be used as the conductor material. Alternatively, a laminated body in which a Cu layer, a Ni layer, and an Au layer are sequentially laminated from the frame body 5 side can be used as the side conductor portion 6. In this case, the Cu layer can be set to have a thickness of 8 μm to 13 μm, the Ni layer can be set to 1 μm to 3 μm, and the Au layer can be set to 0.01 μm to 0.03 μm, for example.

  The bump 8 is electrically connected to the electrode pad 4 and is in contact with the side conductor portion 6. As the bump 8, for example, solder can be used. The solder may be solder using lead such as Pb—Sn alloy solder, or lead-free solder such as Au—Sn alloy solder, Au—Ge alloy solder, Sn—Ag alloy solder, Sn—Cu alloy solder, etc. Also good.

  The SAW device 1 configured in this way is mounted on a mounting board 12 as shown in FIG. The mounting substrate 12 has a mounting pad 13 provided on the mounting surface 12A. The bump 8 is heated while being in contact with the electrode pad 4, the side conductor portion 6, and the mounting pad 13. The bump 8 is melted by this heating, whereby the electrode pad 4, the side conductor portion 6, and the mounting pad 13 are fixed.

  The SAW device of this embodiment is fixed to the mounting substrate 12 with the bumps 8 in contact with the electrode pads 4 and the side conductors 6. In this way, by fixing the bumps 8 in contact with the electrode pads 4 and the side conductor portions 6, the contact area with the bumps 8 can be increased, so that the adhesion with the bumps 8 can be improved. it can. Further, since the side conductor portion 6 is provided on the outer side surface 5 </ b> A of the frame body 5, it contacts the bump 8 on a plane different from the electrode pad 4. Thus, since it can be made to contact with bump 8 on two sides, it can be made hard to exfoliate to the force concerning a plurality of directions. Thereby, since the SAW device 1 can be made difficult to peel off from the mounting substrate 12, for example, the long-term reliability of the SAW device 1 can be improved.

(Modification 1 of SAW device)
As shown in FIG. 7, the side conductor portion 6 is provided continuously over the surface of the electrode pad 4. The side conductor portion 6 is provided in an L shape in the cross-sectional view shown in FIG. The side conductor portion 6 positioned on the surface of the electrode pad 4 has the same configuration as the side conductor portion 6 provided on the outer side surface 5A of the frame 5. By continuously forming the outer surface of the frame 5 and the surface of the electrode pad 4 in this way, the side conductor portion 6 comes into contact with the bumps 8 in two directions. And the adhesion of the bumps 8 can be further improved.

  Further, when the side conductor portion 6 is in contact with the electrode pad 4 and the frame body 5, the contact area can be increased, and the side conductor portion 6 can be made difficult to peel off.

(Modification 2 of the SAW device)
As shown in FIG. 8, the outer surface 5A of the frame 5 may be inclined with respect to the first main surface 2A. The angle formed by the outer side surface 5A and the first main surface 2A can be set to be an angle smaller than 90 °, for example. Side conductor portions 6 are formed on the inclined outer surface 5A. When the side conductor portion 6 is continuously formed from the outer surface 5A to the electrode pad 4, the angle formed by the outer surface 5A and the upper surface of the electrode pad 4 is an obtuse angle (an angle larger than 90 ° and smaller than 180 °). Therefore, the side conductor portion 6 can be made difficult to peel off from the frame 5 or the electrode pad 4.

  In addition, since the side conductor portion 6 is inclined with respect to the first main surface 2A in this way, it is possible to make it difficult for cracks to occur between the bumps 8 and the side conductor portion 6. Furthermore, when the side conductor portion 6 is formed continuously over the surface of the electrode pad 4, the bump 8 can easily enter the corner portion (the corner of the electrode pad 4 and the frame body 5) that has become an obtuse angle. Therefore, cracks can be made difficult to occur.

(Modification 3 of the SAW device)
As shown in FIG. 9, the lid body 7 may be arranged so as to be inside the outer periphery of the frame body 5. By arranging in this way, the bumps 8 can also be arranged on the frame body 5, or a part of the side conductor portion 6 can be arranged on the frame body 5. Note that the SAW device 1 of FIG. 9 is a case where the connection reinforcing layer 11 is formed inside the outer periphery of the electrode pad 4.

  In the SAW device 1 of FIG. 9, the lid body 7 is arranged so as to be inside the outer periphery of the frame body 5, and a part of the side conductor portion 6 is provided on the frame body 5 exposed from the lid body 7. Yes. In addition, bumps 8 are provided so as to be in contact with the side conductor portions 6 located on the frame 5. By arranging in this way, the contact area with the bumps 8 can be increased, so that the adhesion between the bumps 8 and the side conductor portions 6 can be improved.

(Modification 4 of the SAW device)
As shown in FIG. 10, the side conductor portion 6 may have a second side conductor portion 6 a that is located on the side surface 7 </ b> B of the lid body 7 and that is continuous with the side conductor portion 6. The second side conductor portion 6 a is provided continuously with the side conductor portion 6. Since the second side conductor portion 6 a is provided on the lid body 7, the lid body 7 can be made difficult to peel off from the frame body 5. Further, the contact area can be increased by contacting the bump 8 with the side conductor portion 6 and the second side conductor portion 6a. As a result, the bumps 8 can be made difficult to peel off from the side conductor portions 6.

  Furthermore, the second side conductor portion 6a may be located over the main surface 7A of the lid 7 as shown in FIG. In this case, since the second side conductor portion 6 a is positioned in the thickness direction of the lid body 7, peeling in the thickness direction of the lid body 7 is suppressed, so that the lid body 7 can be made difficult to peel off from the frame body 5. In addition, since the second side conductor portion 6a is positioned on the main surface 7A of the lid body 7 as described above, it can be used as a reinforcing material that makes it difficult for the impact when the SAW device 1 is mounted on the mounting board 12 to be transmitted to the lid body 7. Thus, the impact resistance characteristics of the SAW device 1 can be improved.

  Further, the portion of the second side conductor portion 6a located on the main surface 7A of the lid body 7 may have a circuit pattern 15 including an inductor component as shown in FIG. Since the main surface 7A of the lid 7 has a relatively large area as compared with the periphery of the electrode pad 4 and the like, the circuit pattern 15 can be easily designed.

  The circuit pattern 15 can function as an inductor, for example, by forming it in a coil shape. Such an inductor functions as a SAW device, a duplexer matching circuit including the SAW device, or an inductor for adjusting the attenuation pole. Furthermore, as shown in FIG. 13, an insulating film 14 may be provided so as to cover a part of the second side conductor portion 6 a located on the main surface 7 </ b> A of the lid body 7.

(Modification 5 of the SAW device)
The SAW device 1 may have a second frame 16 on the end side of the piezoelectric substrate 2 as shown in FIG. Such a second frame 16 can be set to the same thickness and material as the frame 5. Such a second frame 16 is arranged in the SAW device 1 so as to surround the plurality of electrode pads 4. By having such a second frame 16, it is possible to make it difficult for the bump 8 to flow out of the SAW device 1 when the bump 8 is melted.

  As shown in FIG. 14, the second frame 16 may have an inner surface on the frame 5 side inclined with respect to the first main surface 2A in a cross-sectional view. By inclining in this way, when the side conductor portion 6 is continuously formed over the surfaces of the frame body 5, the electrode pad 4 and the second frame body 16, it can be made difficult to peel off. Further, since the side conductor portion 6 formed in this way can increase the contact area with the bump 8, the adhesion can be further improved. In the present embodiment, the second side conductor portion 6a is not provided, but a second side conductor portion may be provided to further increase the contact area.

  The SAW device is not limited to the embodiment exemplified above. In this embodiment, the case where the elastic wave device has bumps has been described. However, as shown in FIG. 15, the bumps 8 may be arranged on the mounting substrate 12 side. An acoustic wave element (one that does not include a bump among acoustic wave devices) 1 ′ includes a piezoelectric substrate 2, an electrode pad 4 ′, a frame body 5, a side conductor portion 6, and a lid body 7. The acoustic wave element 1 ′ is placed in the mounting direction Th with respect to the mounting substrate 12.

(Method for manufacturing SAW device)
Regarding the method for manufacturing the SAW device 1, a method for forming each component will be described below.

(Formation of excitation electrode, electrode pad and wiring)
Excitation electrodes 3, electrode pads 4 and wirings 10 are formed on the piezoelectric substrate 2. The excitation electrode 3, the electrode pad 4, and the wiring 10 can be formed by forming a metal layer and then patterning it. As the metal layer, a metal layer made of a predetermined material is formed on the first main surface 2A of the piezoelectric substrate 2 by a thin film forming method such as a sputtering method, a vapor deposition method or a chemical vapor deposition method. Thereafter, the metal layer is patterned into each shape by a photolithography method using a reduction projection exposure machine and an RIE (Reactive Ion Etching) apparatus.

A protective film may be formed on the excitation electrode 3. SiO ₂ can be used as the protective film. The protective film is formed so as to cover the excitation electrode 3 by using a thin film forming method such as chemical vapor deposition or vapor deposition. By covering the excitation electrode 3 with the protective film in this way, a short circuit between the electrode fingers 9b of the comb-like electrode 9 can be prevented. The protective film can be set to have a thickness of, for example, 8 nm or more and 20 nm or less. When the protective layer is provided, the electrode pad 4 or the wiring 10 is formed so as to be exposed.

  The connection reinforcing layer 11 can be formed by a lift-off method. Specifically, a photoresist is formed on the first main surface 2A side so that the electrode pad 4 is exposed. Thereafter, a metal film to be the connection reinforcing layer 11 is formed. When a plurality of layers are stacked as the connection reinforcing layer 11, different raw materials are sputtered multiple times to form a metal film. Thereafter, the connection reinforcing layer 11 can be formed at a predetermined position (electrode pad 4) by removing the photoresist.

(Formation of frame and lid)
Next, a protective cover that covers the excitation electrode 3 and protects it from the external environment and forms the excitation space Sp is formed. The protective cover is formed in two stages, that is, the formation of the frame portion 5 and the formation of the lid portion 7.

  First, a first layer serving as a frame portion is formed on the protective film and the connection pad. The first layer is formed, for example, by attaching a film formed of a negative photoresist. Next, an exposure process is performed by irradiating the first layer with light such as ultraviolet rays through a photomask.

  The photomask is configured, for example, by forming a light shielding layer on a transparent substrate. The light shielding layer is disposed at a position corresponding to the position where the first layer is to be removed. In addition, projection exposure, proximity exposure, or contact | adherence exposure can be used for exposure. Thereafter, a development process is performed to leave a portion irradiated with light, and a portion not irradiated with light is removed. Thereby, the frame part 5 is formed.

  Next, the lid portion 7 is formed. First, the second layer constituting the lid portion 7 is formed on the frame portion 5. The second layer is formed, for example, by attaching a film formed of a negative photoresist. By forming the second layer, the opening of the frame is closed and the excitation space Sp is formed. The first layer and the second layer are joined by heating. Next, an exposure process is performed by irradiating the first layer with light such as ultraviolet rays through a photomask. The photomask is configured, for example, by forming a light shielding layer on a transparent substrate.

  The light shielding layer is disposed at a position corresponding to the position where the first layer is to be removed. In addition, projection exposure, proximity exposure, or contact | adherence exposure can be used for exposure. Thereafter, a development process is performed to leave a portion irradiated with light, and a portion not irradiated with light is removed. Thereby, the cover part 7 is formed. By forming the lid portion 7, a protective cover including the frame portion 5 and the lid portion 7 is completed.

(Formation of side conductor)
Next, the side conductor portion 6 is formed. The side conductor portion 6 is formed from the first main surface 2A of the piezoelectric substrate 2 to the side surface of the protective cover, and is made of, for example, a three-layer structure of Cu (thickness 10 μm), Ni (thickness 2 μm), and Au (0.02 μm). . As a method for forming such a side conductor portion 6, it can be formed by plating Cu and Ni and then flash plating Au.

  Next, a process for forming the side conductor portion 6 will be described. A plating base layer is formed to cover the side conductors 6 and the side surfaces of the protective cover (frame body 5 and lid body 7). Thereafter, the side conductor portion 6 is formed by a plating method. The plating underlayer is for forming the side conductor portion 6 by electrical deposition or chemical deposition.

  The plating base layer formed on the main surface 7A of the lid 7 can be a part of a conductor layer that forms a matching circuit or an inductor for adjusting the attenuation pole. In general, Cu is used as the material for the plating base layer, but an adhesive layer of Cr or Ti may be interposed in consideration of the adhesiveness between Cu and Al—Cu wiring. In this case, the adhesion can be improved. Moreover, although the thickness of plating is determined by the plating processing time, if it exceeds 30 μm, electroplating may be used. Thereby, a processing speed can be improved and productivity can be improved. Finally, Ni and Au are formed in order to maintain good soldering.

DESCRIPTION OF SYMBOLS 1 Elastic wave (SAW) apparatus 2 Piezoelectric substrate 3 Excitation electrode 4 Electrode pad 5 Frame 5A Outer side surface 6 Side surface conductor part 6a 2nd side surface conductor part 7 Lid body 7A Main surface 8 Bump 9 Comb-like electrode 9a Bus bar 9b Electrode finger 9c Reflector 10 Wiring 11 Connection strengthening layer 12 Mounting substrate 12A Mounting surface 13 Mounting pad 14 Insulating film 15 Circuit pattern 16 Second frame

Claims (9)

A piezoelectric substrate;
An excitation electrode located on the piezoelectric substrate;
An electrode pad located on the piezoelectric substrate and electrically connected to the excitation electrode;
A frame located on the piezoelectric substrate, enclosing the excitation electrode on the inside, and the electrode pad on the outside;
A side conductor portion made of a conductor material, located on the outer surface of the frame;
A lid placed on the frame;
An elastic wave device having a bump electrically connected to the electrode pad and in contact with the side conductor portion. An elastic wave device mounted on a mounting substrate via bumps,
A piezoelectric substrate;
An excitation electrode located on the piezoelectric substrate;
An electrode pad located on the piezoelectric substrate and in contact with the bump, electrically connected to the excitation electrode;
A frame located on the piezoelectric substrate, enclosing the excitation electrode on the inside, and the electrode pad on the outside;
A side conductor portion made of a conductor material, located on the outer surface of the frame, and in contact with the bump;
An elastic wave device having a lid placed on the frame.   The elastic wave device according to claim 1, wherein the side conductor portion is provided continuously over the surface of the electrode pad.   The said side conductor part is located in the side surface of the said cover body, The elastic wave apparatus in any one of Claims 1-3 which has the 2nd side conductor part which followed the said side conductor part.   The elastic wave device according to claim 4, wherein the second side conductor portion is located from a side surface to a main surface of the lid body.   The acoustic wave device according to claim 5, wherein a portion of the second side conductor portion located on the main surface of the lid has a circuit pattern including an inductor component. The elastic wave device according to any one of claims 3 to 6 according to claim 1 or claim 1,
An electronic component module comprising a mounting substrate having a mounting pad on which the acoustic wave device is mounted via the bump. The elastic wave device according to any one of claims 3 to 6 according to claim 2 or claim 2,
Bumps electrically connected to the electrode pads;
An electronic component module comprising: a mounting substrate having a mounting pad on which the acoustic wave device is mounted via the bump. The electronic component module according to claim 7 or 8,
A mobile terminal having an antenna portion electrically connected to the acoustic wave device.

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