JP5815365B2 - Elastic wave device, electronic component, and method of manufacturing elastic wave device - Google Patents

Description

  The present invention relates to an elastic wave device such as a surface acoustic wave (SAW) device or a piezoelectric thin film resonator (FBAR), an electronic component using the same, and a method of manufacturing the elastic wave device.

  A so-called wafer level package (WLP: Wafer Level Package) type acoustic wave device for the purpose of downsizing is known. This WLP type acoustic wave device has a piezoelectric substrate, an excitation electrode provided on the piezoelectric substrate, and a cover for sealing the excitation electrode (see, for example, Patent Document 1).

  The cover has a recess, and the cover is arranged on the main surface of the piezoelectric substrate so that the excitation electrode is positioned in a vibration space that is a space surrounded by the inner wall of the recess and the main surface of the piezoelectric substrate.

JP 2008-227748 A

  Incidentally, in the acoustic wave device having the above-described structure, the cover may be peeled off from the piezoelectric substrate due to a difference in linear expansion coefficient between the cover and the piezoelectric substrate. When the cover is peeled off from the piezoelectric substrate in this way, the airtightness of the vibration space is not maintained, and external moisture and the like easily enter the vibration space. If external moisture enters the vibration space, it causes corrosion of the excitation electrode. When the excitation electrode corrodes, the electrical characteristics of the acoustic wave device deteriorate.

  When the electrical characteristics of the acoustic wave device are degraded, the electrical characteristics of the electronic component on which the acoustic wave device is mounted are also degraded.

  Therefore, it is desired to provide an elastic wave device in which the hermeticity of the vibration space is maintained in a good state for a long time.

  An elastic wave device as one embodiment of the present invention includes an element substrate having a frame-shaped groove on its upper surface, an excitation electrode positioned in a region surrounded by the frame-shaped groove on the upper surface of the element substrate, A frame having an inner peripheral surface surrounding the excitation electrode and fitted in the groove, and a cover having a lid that overlaps the frame and closes the frame.

  An electronic component as one embodiment of the present invention includes a mounting substrate and a conductive bonding material in a state where a terminal exposed on the upper surface of the lid body faces a mounting pad disposed on the upper surface of the mounting substrate. And the above-described elastic wave device mounted on the mounting substrate, and an exterior resin that covers the elastic wave device.

  According to another aspect of the present invention, there is provided a method of manufacturing an acoustic wave device including an element substrate having a frame-shaped groove on an upper surface and an excitation electrode formed in a region surrounded by the frame-shaped groove on the upper surface. And a step of fitting a frame body in the groove, and a step of closing the frame body by overlaying a lid on the frame body.

  In the acoustic wave device having the above-described configuration, since the frame body is fitted in the groove portion, the moisture intrusion path that can enter the vibration space from the interface between the frame body and the element substrate becomes longer, and the airtightness in the vibration space is increased. The property is maintained in a good state for a long time.

(A) is a top view of the SAW device concerning the embodiment of the present invention, and (b) is a top view in the state where the lid of the SAW device of Drawing 1 (a) was removed. (A) is sectional drawing in the A-A 'line, (b) is sectional drawing in the B-B' line. (A)-(c) is an expanded sectional view which shows the cross-sectional shape of a groove part. It is sectional drawing of the electronic component which concerns on embodiment of this invention. (A) to (d) are cross-sectional views illustrating a method for manufacturing the SAW device shown in FIG. (A) to (d) are cross-sectional views for explaining a method of manufacturing the SAW device shown in FIG. 1, and is a continuation of FIG. 5 (d). (A) to (d) are cross-sectional views for explaining a method of manufacturing the SAW device shown in FIG. 1, and show a continuation of FIG. 6 (d).

  Hereinafter, a SAW device according to an embodiment of the present invention will be described with reference to the drawings. Note that the drawings used in the following description are schematic, and the dimensional ratios and the like on the drawings do not necessarily match the actual ones.

(Configuration of SAW device, etc.)
FIG. 1A is a plan view of the SAW device 1 according to the embodiment of the present invention, and FIG. 1B is a plan view of the SAW device 1 in FIG. 1A with the lid 4 removed. is there. 2A is a cross-sectional view taken along line AA ′ in FIG. 1A, and FIG. 2B is a cross-sectional view taken along line BB ′ in FIG.

  The SAW device 1 covers the element substrate 3, the excitation electrode 5 provided on the upper surface 3a of the element substrate 3, the electrode pad 7 connected to the excitation electrode 5, the excitation electrode 5, and exposes the electrode pad 7. A cover 9 is provided.

  The SAW device 1 receives a signal via any of the plurality of terminals 22. The input signal is filtered by the excitation electrode 5 or the like. Then, the SAW device 1 outputs the filtered signal via any of the plurality of terminals 22. The specific configuration of each member is as follows.

  The element substrate 3 is constituted by a piezoelectric substrate. Specifically, the element substrate 3 is composed of a single crystal substrate having piezoelectricity such as a lithium tantalate single crystal or a lithium niobate single crystal. The element substrate 3 is formed in a rectangular parallelepiped shape, for example, and has an upper surface 3a and a lower surface 3b that are rectangular and parallel to each other and are flat. The size of the element substrate 3 may be set as appropriate. For example, the thickness (Z direction) is 0.2 mm to 0.5 mm, and the length of one side (X direction or Y direction) is 0.5 mm. ~ 3mm.

Grooves 10 are formed in the upper surface 3a of the element substrate 3 as shown in FIG. The groove 10 is formed in a frame shape along the outer periphery of the upper surface 3 a of the element substrate 3. The frame 2 is fitted into the groove 10 as described later. By fitting the frame body 2 into such a groove portion 10, the frame body 2 is firmly fixed to the element substrate 3, and peeling of the frame body 2 from the element substrate 3 can be suppressed. Further, since the length of the interface between the frame body 2 and the element substrate 3 is increased by the amount of the frame body 2 fitted into the groove portion 10, a moisture intrusion path that can enter the vibration space 21 from the outside is correspondingly increased. It becomes longer and it becomes difficult for moisture to enter the vibration space 21. Therefore, according to the SAW device 1, the airtightness of the vibration space 21 can be maintained in a good state for a long time.

  FIG. 3A is an enlarged cross-sectional view of the groove 10 in the SAW device 1. As shown in the figure, the cross-sectional shape of the groove 10 is, for example, a rectangular shape. The depth d of the groove 10 is, for example, 100 μm to 300 μm, and the width w of the groove 10 is, for example, 30 μm to 100 μm.

  The cross-sectional shape of the groove 10 is not limited to that shown in FIG. 3A, and may be, for example, a triangular shape that gradually narrows toward the lower end as shown in FIG. 3B. By forming the groove portion 10 as shown in FIG. 3B, it is possible to make the infiltration path of moisture that can enter the vibration space 21 from the outside longer.

  Another example of the cross-sectional shape of the groove 10 may be as shown in FIG. In the groove 10 shown in FIG. 3C, minute irregularities are formed on the inner wall of the groove 10. By forming the groove portion 10 in such a shape, the moisture intrusion path can be made longer as in FIG. 3B, and the frame portion 2 is less likely to come off from the element substrate 2 due to the anchor effect due to the unevenness. Become.

As shown in FIG. 1B, the excitation electrode 5 is arranged in a region surrounded by the frame-like groove portion 10 in the upper surface 3 a of the element substrate 3. The excitation electrode 5 is a so-called IDT (Interdigital).
Transducer) and has a pair of comb-like electrodes. Each comb-like electrode has a bus bar extending in the propagation direction of the surface acoustic wave on the element substrate 3 and a plurality of electrode fingers extending from the bus bar in a direction orthogonal to the propagation direction of the surface acoustic wave. The two comb-like electrodes are provided so that their electrode fingers mesh with each other.

  Since FIG. 1 and the like are schematic diagrams, a pair of comb-like electrodes having several electrode fingers is shown, but in practice, a plurality of pairs of combs having a larger number of electrode fingers are shown. Toothed electrodes may be provided. Further, a ladder-type SAW filter in which a plurality of excitation electrodes 5 are connected by a system such as series connection or parallel connection may be configured, or a plurality of excitation electrodes 5 are arranged in the propagation direction of a surface acoustic wave. A mode SAW resonator filter may be configured.

  The electrode pad 7 is formed on the upper surface 3a. The planar shape of the electrode pad 7 may be set as appropriate. For example, the planar shape is circular. The number and arrangement position of the electrode pads 7 are appropriately set according to the configuration of the filter constituted by the excitation electrodes 5. In the SAW device 1, the case where six electrode pads 7 are arranged along the outer periphery of the upper surface 3a is illustrated.

  Excitation electrode 5 and electrode pad 7 are connected by wiring 15. The wiring 15 is formed on the upper surface 3 a and connects the bus bar of the excitation electrode 5 and the electrode pad 7. Note that the wirings 15 may be three-dimensionally crossed with not only a portion formed on the upper surface 3a but also two wirings 15 through which different signals flow with an insulator interposed therebetween.

The excitation electrode 5, the electrode pad 7, and the wiring 15 are made of the same conductive material, for example. The conductive material is, for example, an Al alloy such as Al or an Al—Cu alloy. Moreover, the excitation electrode 5, the electrode pad 7, and the wiring 15 are formed with the same thickness, for example, and these thicknesses are 100-500 nm, for example. Further, when the wirings 15 are three-dimensionally crossed, the wiring 15 on the upper surface 3a side is formed of, for example, an Al—Cu alloy, and the wirings 15 disposed thereon via an insulator are, for example, Cr / Ni / Au sequentially from the bottom. Alternatively, it is formed by wiring having a multilayer structure made of Cr / Al.

  As shown in FIG. 2, on the upper surface of the electrode pad 7, there is provided a connection reinforcing layer 6 whose main purpose is to improve the connectivity with the bumps. The connection reinforcing layer 6 includes, for example, a nickel layer superimposed on the electrode pad 7 and a gold layer superimposed on the nickel layer.

  The cover 9 has a substantially rectangular shape when viewed in plan. The cover 9 is provided on the upper surface 3 a of the element substrate 3, the frame body 2 surrounding the excitation electrode 5 when the upper surface 3 a is viewed in plan, and the lid body 4 that overlaps the frame body 2 and closes the opening of the frame body 2. And have. A vibration space 21 is formed by the excitation electrode 5 by a space surrounded by the upper surface 3 a of the element substrate 3, the frame body 2 and the lid body 4. By providing such a vibration space 21, desired excitation can be obtained without hindering the vibration of the SAW excited by the excitation electrode 5.

  The planar shape of the vibration space 21 may be set as appropriate, but the SAW device 1 has a substantially rectangular shape. Note that the cover 9 may be regarded as having a shape in which a concave portion constituting the vibration space 21 is formed on the lower surface side.

  The frame 2 is configured by forming one or more openings serving as vibration spaces 21 in a layer having a substantially constant thickness. The thickness of the frame body 2 (height of the vibration space 21) is, for example, several μm to 30 μm. The lower end portion of the frame body 2 is fitted in the groove portion 10. Therefore, the planar shape of the frame 2 is a shape that follows the groove 10. The frame 2 is made of, for example, a metal material such as Ni, Cr, An, Sn, Au, or Cu, or a resin material such as an epoxy resin or an acrylic resin. In the SAW device 1, Cu is used as the material of the frame 2 and is formed by a plating method. By forming the frame body 2 by plating, the frame body 2 can be fitted into the groove section 10 with almost no gap at the boundary between the groove section 10 and the frame body 2.

  Further, since the excitation electrode 5, the wiring 15 and the electrode pad 7 are surrounded by the frame-like frame body 2 made of metal, it is possible to suppress the influence of unnecessary electromagnetic waves from the outside on these electrodes and the like. Is done. That is, the frame 2 also functions as an electromagnetic shield. In order to enhance the effect of this shielding function, in the SAW device 1, the frame 2 and the electrode pad 7 for ground potential are electrically connected. The ground potential electrode pad 7 is located at the lower left in FIG. 1B, and the frame 2 is connected to the electrode pad 7 via the wiring 15.

  A lid 4 is laminated on the frame 2 so as to close the opening of the frame 2. The lid 4 is composed of a layer having a substantially constant thickness, and the thickness is, for example, several μm to 30 μm. The planar shape of the lid 4 is, for example, a generally rectangular shape. The lid 4 is made of a photosensitive resin. The photosensitive resin is, for example, a urethane acrylate-based, polyester acrylate-based, or epoxy acrylate-based resin that is cured by radical polymerization of an acryl group or a methacryl group. In addition, a polyimide resin or the like can also be used.

  In addition, when forming the frame 2 with resin, the frame 2 and the lid 4 may be formed of the same resin material or may be formed of different resin materials.

  A support column 13 is interposed between the lower surface of the lid 4 and the upper surface 3a of the element substrate 3 as shown in FIG. Since the cover 4 is supported by the support 13 by providing the support 13, the cover 4 can be prevented from being deformed when the SAW device 1 is sealed with transfer mold, for example, Generation | occurrence | production of the malfunction that the cover body 4 contacts the excitation electrode 5 is suppressed.

  In the SAW device 1, the support column 13 is arranged around the excitation electrode 5 so as to surround the excitation electrode 5 as shown in FIG. The support column 13 is made of, for example, a material whose main component is metal or a material whose main component is resin. In the SAW device 1, the support column 13 is formed in the same process using the same material as the frame body 2. That is, the column 13 is made of copper and is formed simultaneously with the frame 2 by a plating method.

  The planar shape of the frame body 2 is generally a frame shape, but when a conductive material is used as the material of the support column 13 as in the SAW device 1, the wiring 15 is drawn out so that the support column 13 and the wiring 15 do not contact each other. Since the column 13 is interrupted in the portion, it is not a complete frame shape.

  On the lower surface 3b of the element substrate 3, a back surface portion 11 is provided as shown in FIG. The back surface portion 11 includes, for example, a back electrode that covers substantially the entire lower surface 3b of the element substrate 3 and an insulating protective layer that covers the back electrode. Charges may be charged on the surface of the element substrate 3 due to temperature changes, etc., but the charged charges can be discharged by providing the back electrode, and the breakdown of the excitation electrode 5 due to static electricity is suppressed. can do. Further, the protective layer suppresses damage to the element substrate 3.

A protective film 8 is disposed on the upper surface 3 a of the element substrate 3, and a cover 9 is disposed on the protective film 8. The protective film 8 covers the excitation electrode 5 and contributes to prevention of oxidation of the excitation electrode 5. The protective film 8 is made of, for example, silicon oxide (SiO ₂ or the like), aluminum oxide, zinc oxide, titanium oxide, silicon nitride, or silicon. The thickness of the protective film 8 is, for example, about 1/10 (10 to 30 nm) of the thickness of the excitation electrode 5 or 200 nm to 1500 nm, which is thicker than the excitation electrode 5.

  The electrode pad 7 or the connection reinforcing layer 6 is exposed from the protective film 8. The opening of the protective film 8 for exposing the connection reinforcing layer 6 may have the same shape and area as the connection reinforcing layer 6 or may be larger than the connection reinforcing layer 6. Further, the opening of the protective film 8 may be smaller than the connection reinforcing layer 6, and in this case, the portion around the opening of the protective film 8 covers the outer peripheral portion of the connection reinforcing layer 6.

  A terminal 22 extending in the thickness direction is provided on the electrode pad 7 or the connection reinforcing layer 6 exposed from the protective film 8. The terminal 22 includes a column portion 14 and a flange portion 16.

  The column portion 14 extends from the upper surface of the electrode pad 7 or the connection reinforcing layer 6 toward the lid 4, and its upper end is exposed on the upper surface of the lid 4. The column portion 14 is, for example, a columnar shape, but the shape is not limited to this, and may be a square columnar shape. Further, as the shape of the column part 14, the side surface may be inclined so that the diameter becomes narrower toward the upper end side of the column part 14, or conversely, the diameter becomes narrower toward the lower end side of the column part 14. The side surface may be inclined.

  The column part 14 consists of a material which has a metal as a main component. In the SAW device 1, the column portion 14 is formed by the same process using the same material as the frame body 2 and the column 13. That is, the column part 14 is formed by copper plating. The column portion 14 is formed in two stages, a lower portion extending in the thickness direction in the vibration space 21 and an upper portion penetrating the lid 4, and is formed around the upper portion. The plating base layer 12 is formed. The plating base layer is made of, for example, titanium or copper.

  On the other hand, a flange portion 16 is connected to an exposed portion of the column portion 14 from the upper surface of the cover 9. The flange portion 16 is formed by, for example, copper plating. When the flange portion 16 and the column portion 14 are formed by copper plating, both can be formed integrally.

  For example, the flange portion 16 is formed to be slightly larger than the end surface of the column portion 14 so as to cover the end surface exposed from the upper surface of the cover 9 of the column portion 14, and the outer peripheral portion thereof is laminated on the cover 9. Yes. The shape of the flange portion 16 in plan view is, for example, a circular shape.

  A reinforcing layer 17 is disposed on the upper surface of the cover 9 on which the flange portion 16 is disposed. In FIG. 1A, the reinforcing layer 17 is indicated by a broken line. The reinforcing layer 17 is for reinforcing the strength of the cover 9. For example, after mounting the SAW device 1 on an external mounting substrate or the like, the entire SAW device 1 may be resin-molded, but a large pressure is applied to the SAW device 1 when resin-molding. Even in this case, the cover 9 can be prevented from being deformed by providing the reinforcing layer 17. As a result, the shape of the sealing space 6 can be prevented from being greatly distorted, so that the reliability of the SAW device 1 can be improved.

  The reinforcing layer 17 is made of a material having a higher Young's modulus than the material constituting the cover 9. For example, the Young's modulus of the cover 9 is 0.5 to 1.0 GPa, whereas the Young's modulus of the reinforcing layer 17 is 100 to 250 GPa. Specifically, the reinforcing layer 17 is made of a material whose main component is a metal such as copper.

  The thickness of the reinforcing layer 17 is, for example, 1 to 50 μm. The reinforcing layer 17 is formed in a rectangular shape over a relatively wide range of the cover 9. From the viewpoint of preventing deformation of the sealing space 21, the reinforcing layer 17 is provided on the upper surface of the lid body 4 so as to be positioned in a region immediately above the region where the support column 13 surrounds the excitation electrode 5. In other words, the reinforcing layer 17 is provided in a range that covers the entire support column 13 when viewed through the plane. The reinforcing layer 17 is not connected to the flange portion 16 and is in an electrically floating state.

  The reinforcing layer 17 is covered with an insulating film 18 on the upper surface and side surfaces. By providing the insulating film 18, it is possible to prevent the conductive bonding material such as solder attached to the terminals 22 from adhering to the reinforcing layer 17 when the SAW device 1 is mounted on an external circuit board. Thus, the SAW device 1 in which mounting defects and electrical characteristics are hardly deteriorated can be obtained.

  If at least the side surface of the surface of the reinforcing layer 17 is covered with the insulating film 18, it is possible to sufficiently suppress the conductive bonding material such as solder attached to the terminal 22 from adhering to the reinforcing layer 17. By covering the upper surface of the reinforcing layer 17 with the insulating film 18, it is possible to more reliably suppress the conductive bonding material from adhering to the reinforcing layer 17. The insulating film 18 has a similar shape that is slightly larger than the reinforcing layer 17 in plan view. Note that the planar shape of the insulating film 18 is not limited to this, and for example, the insulating film 18 may be formed on the entire top surface of the cover 9 with a window provided in a portion corresponding to the flange 16.

  The insulating film 18 is made of resin. Specifically, as the resin material of the insulating film 18, a phenol resin, a fluorine resin, an epoxy resin, an acrylic resin, or the like can be used. In this way, the insulating film 18 made of resin reaches the upper surface of the cover 9 along the side surface of the reinforcing layer 17. Since the insulating film 18 reaches the upper surface of the cover 9, the insulating film 18 made of a resin material and the cover 9 are firmly bonded to each other at the reaching portion, so that the insulating film 18 is prevented from peeling from the reinforcing layer 17. can do. Therefore, the reinforcing layer 17 is hardly exposed when the insulating film 18 is peeled off, and the effect of preventing the adhesion of the conductive bonding material to the reinforcing layer 17 is improved.

  FIG. 4 is a cross-sectional view showing a part of the electronic component 51 on which the SAW device 1 is mounted. Note that the sectional view of the SAW device 1 in FIG. 4 corresponds to a section taken along the line A-A ′ in FIG. 1.

  The electronic component 51 includes a mounting substrate 53, a SAW device 1 mounted on the mounting substrate 53, and an exterior resin 59 that covers the SAW device 1.

  The SAW device 1 is mounted on the mounting substrate 53 by bonding a mounting pad 55 provided on the upper surface 53 a of the mounting substrate 53 and the terminal 22 of the SAW device 1 via a conductive bonding material 57. .

  In addition to this, the electronic component 51 includes an active component such as an IC mounted on the mounting substrate 53 and sealed together with the SAW device 1 by the exterior resin 59 and a passive component such as a capacitor to constitute a module.

  The mounting board 53 is configured by, for example, a printed wiring board. The printed wiring board may be a rigid board or a flexible board. The printed wiring board may be a single-layer board, a two-layer board, or a multilayer board having two or more layers. Moreover, the base material, insulating material, and conductive material of the printed wiring board may be selected from appropriate materials.

  The bonding material 57 is in contact with both the terminal 22 of the SAW device 1 and the pad 55 of the mounting substrate 53. The bonding material 57 is formed of a metal that is melted by heating and bonded to the terminal 22. The bonding material 57 is made of, for example, solder. The solder may be a solder using lead such as Pb—Sn alloy solder, or lead-free solder such as Au—Sn alloy solder, Au—Ge alloy solder, Sn—Ag alloy solder, Sn—Cu alloy solder, etc. It may be.

  The exterior resin 59 includes, for example, an epoxy resin, a curing material, and a filler as main components. The exterior resin 59 not only covers the SAW device 1 from the side of the back surface 11 and from the side, but is also filled between the SAW device 1 and the mounting substrate 53. Specifically, the exterior resin 59 is filled between the upper surface of the cover 9 and the upper surface 53 a of the mounting substrate 53 and around the bonding material 57.

(Method for manufacturing SAW device)
FIG. 5A to FIG. 7D are cross-sectional views (corresponding to the line AA ′ in FIG. 1) for explaining the method of manufacturing the SAW device 1. The manufacturing process proceeds in order from FIG. 5 (a) to FIG. 7 (d).

  The steps of FIG. 5A to FIG. 7B corresponding to the method for manufacturing the SAW device 1 are realized in a so-called wafer process. That is, a thin film formation, a photolithography method, or the like is performed on the mother substrate that becomes the element substrate 3 by being divided, and then a plurality of SAW devices 1 are formed in parallel by dicing. . However, in FIG. 5A to FIG. 7D, only the portion corresponding to one SAW device 1 is shown. In addition, although the shape of the conductive layer and the insulating layer changes with the progress of the process, a common code may be used before and after the change.

  As shown in FIG. 5A, first, the excitation electrode 5 is formed on the upper surface 3 a of the element substrate 3. Specifically, first, a metal layer is formed on the upper surface 3a by a thin film forming method such as a sputtering method, a vapor deposition method or a CVD (Chemical Vapor Deposition) method. Next, the metal layer is patterned by a photolithography method using a reduction projection exposure machine (stepper) and an RIE (Reactive Ion Etching) apparatus. The excitation electrode 5 is formed by patterning the metal layer. The wiring 15 and the electrode pad 7 are formed simultaneously with the excitation electrode 5. Note that a back surface portion 11 is formed on the lower surface 3 b of the element substrate 3.

When the excitation electrode 5 and the like are formed, the groove 10 is formed as shown in FIG. The groove portion 10 is formed, for example, by pressing the dicing blade 29 against the upper surface 3a of the element substrate 3 and scraping the upper surface side of the element substrate 3 to a predetermined depth.

  When the groove 10 is formed, the protective film 8 is formed as shown in FIG. Specifically, first, a thin film to be the protective film 8 is formed by an appropriate thin film forming method. The thin film forming method is, for example, a sputtering method or CVD. Next, a part of the thin film is removed by RIE or the like so that the electrode pad 7 and the groove 10 are exposed. Thereby, the protective film 8 is formed.

  When the protective film 8 is formed, the frame body 2, the column 13 and the column portion 14 are formed as shown in FIGS. 5 (d) to 6 (c).

  Specifically, first, as shown in FIG. 5D, the first resist layer 30 is formed, and in the first resist layer 30, the locations where the frame body 2, the pillars 13 and the column portions 14 are formed are defined. Patterning is performed by removing by photolithography. Subsequently, the first plating base layer 12 is formed on the patterned first resist layer 30 and a portion exposed from the first resist layer 30 by patterning the first resist layer 30.

  Next, a second resist layer 31 is formed as shown in FIG. The second resist layer 31 is patterned at the same location as the first resist layer 30.

  Next, as shown in FIG. 6B, plating is grown starting from the first plating foundation layer 12 exposed from the second resist layer 31. Thereafter, if necessary, the upper surface of the second resist layer 31 is polished by a CMP (Chemical Mechanical Polishing) method or the like so that the grown plating has a predetermined height and is flattened.

  Thereafter, as shown in FIG. 6C, the first resist layer 30 and the second resist layer 31 are removed, so that the lower portion 14a of the frame 2, the column 13 and the column portion 14 is formed.

  Next, the frame body 2 is formed by patterning the lid layer 35 serving as a lid into a predetermined shape. Specifically, first, as shown in FIG. 6D, the lid layer 35 is placed on the frame 2 or the like, and light such as ultraviolet rays is applied to the lid layer 35 via the photomask 40. L is irradiated. The lid layer 35 is made of, for example, a negative photoresist. The photomask 40 is configured by forming a light shielding portion 39 on a transparent substrate 41. The light shielding portion 39 is formed at a position corresponding to a portion where the lid layer 35 is to be removed when the photomask 40 is set on the element substrate 3.

  Thereafter, as shown in FIG. 7A, development processing is performed, and the portion of the lid layer 35 that has been irradiated with the light L is left, and the portion that has not been irradiated with the light L is removed. Thereby, the cover body 4 is completed. Further, the opening of the frame body 2 is closed by the lid body 4 so that the vibration space 21 is simultaneously formed.

  Next, as shown in FIG. 7B, a second plating base layer 19 is formed on the upper surface of the lid portion 4 and the lower portion 14 a of the column portion 14 exposed from the lid portion 4. A third resist layer 32 is formed. The third resist layer 32 is patterned so that a portion where the reinforcing layer 17 is formed and a portion where the terminal 22 is formed are opened.

  Next, as shown in FIG. 7C, plating is grown starting from the second plating base layer 19 exposed from the third resist layer 32.

Thereafter, the upper surface of the grown plating is polished by CMP until a predetermined thickness is obtained.
By removing the resist layer 32, the reinforcing layer 17, the upper portion 14b of the column portion 14, and the flange portion 16 are completed as shown in FIG. By completing the upper portion 14b and the flange portion 16 of the column portion 14, the terminal 22 including the column portion 14 and the flange portion 16 is completed.

  Finally, the insulating film 18 that covers the reinforcing layer 17 is formed to complete the SAW device 1.

  The present invention is not limited to the above embodiment, and may be implemented in various aspects.

  The elastic wave device is not limited to the SAW device. For example, the acoustic wave device may be a piezoelectric thin film resonator.

  In the acoustic wave device, the connection reinforcing layer 6, the protective film 8, the back surface portion 11, the support column 13, the reinforcing layer 17 and the like are not essential requirements and may be omitted.

  In the method for manufacturing the acoustic wave device described above, the groove 10 is formed after the excitation electrode 5 and the like are formed on the upper surface 3a of the element substrate 3. However, after the groove 10 is formed, the excitation electrode 5 and the like are formed thereafter. You may do it.

DESCRIPTION OF SYMBOLS 1 ... SAW apparatus 2 ... Frame body 3 ... Element board | substrate 4 ... Cover body 5 ... Excitation electrode 6 ... Connection reinforcement | strengthening layer 7 ... Electrode pad 8 ... Protective film 9 ... Cover 10 ... Groove

Claims (11)

An element substrate having a frame-shaped groove on its upper surface;
An excitation electrode located in a region surrounded by the frame-shaped groove on the upper surface of the element substrate;
A frame having an inner peripheral surface surrounding the excitation electrode and fitted in the groove, and a cover having a cover that covers the frame and covers the frame .
The frame body is an elastic wave device in which an outer periphery is located inside an outer periphery of the upper surface .   The elastic wave device according to claim 1, wherein the frame is made of a material mainly composed of metal.   The elastic wave device according to claim 1, wherein the lid is made of a material mainly composed of a resin.   The elastic wave device according to claim 3, further comprising a support column that is located in a region surrounded by the frame-shaped groove and is interposed between the upper surface of the element substrate and the lower surface of the lid.   The elastic wave device according to claim 4, wherein the support column is provided around the excitation electrode so as to surround the excitation electrode.   Reinforcement made of a metal-based material disposed in a region of the upper surface of the lid that overlaps in the thickness direction the region of the upper surface of the element substrate that surrounds the excitation electrode. The elastic wave device according to claim 5, further comprising a layer. An electrode pad that is electrically connected to the excitation electrode and is located in a region surrounded by the frame-shaped groove on the upper surface of the element substrate;
The terminal according to any one of claims 1 to 6, further comprising a terminal having a pillar portion extending in a thickness direction from the electrode pad and exposed on an upper surface of the lid body and penetrating the lid body in the thickness direction. The elastic wave device described in 1.   An electrode pad that is electrically connected to the excitation electrode and is located in a region surrounded by the frame-shaped groove on the upper surface of the element substrate;
  The support column is made of a metal-based material,
  The acoustic wave device according to claim 5, wherein the electrode pad is disposed outside a region where the support column surrounds the excitation electrode. A mounting board;
The mounting pad disposed on the upper surface of the mounting substrate is bonded to the mounting substrate via a conductive bonding material in a state where the terminals exposed on the upper surface of the lid face each other, and mounted on the mounting substrate. The acoustic wave device according to Item 8 ,
An electronic component comprising an exterior resin that covers the acoustic wave device. Providing an element substrate having a frame-shaped groove on the upper surface, and an excitation electrode formed in a region surrounded by the frame-shaped groove on the upper surface;
A method of manufacturing an acoustic wave device, comprising: a step of fitting a frame body in the groove portion so that an outer periphery is positioned on an inner side of an outer periphery of the upper surface ; and a step of covering the frame body with a lid over the frame body. . The step of preparing the element substrate includes the step of forming the excitation electrode by patterning the film after forming a conductive film on the upper surface of the element substrate, and the frame-shaped groove portion surrounding the excitation electrode. The method for manufacturing an acoustic wave device according to claim 10 , further comprising:

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