CN111623917B - High-sensitivity surface acoustic wave absolute pressure sensor - Google Patents
High-sensitivity surface acoustic wave absolute pressure sensor Download PDFInfo
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- CN111623917B CN111623917B CN202010525496.XA CN202010525496A CN111623917B CN 111623917 B CN111623917 B CN 111623917B CN 202010525496 A CN202010525496 A CN 202010525496A CN 111623917 B CN111623917 B CN 111623917B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/10—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the capsule type
- G01L7/102—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the capsule type construction or mounting of capsules
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/04—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by acoustic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L17/00—Devices or apparatus for measuring tyre pressure or the pressure in other inflated bodies
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- Acoustics & Sound (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A high-sensitivity surface acoustic wave absolute pressure sensor comprises a pressure sensing diaphragm, a surface acoustic wave resonator, an intermediate layer, a pressure reference cavity and a cover plate; the middle layer, the pressure sensing film and the cover plate form an integral structure in a direct bonding or indirect bonding mode, and a pressure reference cavity is formed on the integral structure; the surface acoustic wave resonator is arranged on the inner surface of the pressure sensing film and is positioned in the center of a pressure sensing area of the pressure reference cavity; the pressure reference cavity is of a rectangular or oval structure, the short side or the short axis of the rectangle is parallel to the propagation direction of surface acoustic wave in the surface acoustic wave resonator, the length of the pressure reference cavity is greater than or equal to that of the surface acoustic wave resonator, and the long side or the long axis of the rectangle is parallel to the direction of the aperture of the sound in the surface acoustic wave resonator; and output leads are connected to the bus bars of the surface acoustic wave resonator (2). The invention has the advantages of high sensitivity, small volume, simple processing technology, good inheritance and good long-term stability.
Description
Technical Field
The invention relates to a high-sensitivity surface acoustic wave absolute pressure sensor, and belongs to the field of sensor design.
Background
In recent years, the surface acoustic wave pressure sensor has attracted much attention due to its unique characteristics such as wireless and passive properties. The system is mainly applied to pressure measurement of automobile tires and is called as a second generation intelligent tire monitoring system. The working principle of the surface acoustic wave pressure sensor is as follows: when external pressure acts on the pressure sensing diaphragm, pressure difference is formed between the pressure sensing diaphragm and the pressure reference cavity inside the pressure sensing diaphragm, deformation of the pressure sensing diaphragm is caused, the surface acoustic wave characteristic of the diaphragm surface transmission is changed, and the pressure value to be detected can be obtained by detecting output signals such as frequency or phase of a surface acoustic wave device.
As a key performance index of the surface acoustic wave pressure sensor, the quality of the sensor is directly influenced by the pressure sensitivity. Too low pressure sensitivity will increase wireless signal's the demodulation degree of difficulty, will unable obtain valid data when serious, leads to sensor precision to reduce or even become invalid, hinders its practicality. In order to improve the pressure sensitivity, researchers have made improvements in the packaging structure. For an even thin plate type packaging structure, a square pressure reference cavity or a circular pressure reference cavity is often formed, and pressure sensitivity can be improved by reducing the thickness of a pressure sensing film, increasing the area of a pressure sensing area or placing a surface acoustic wave device at the edge of the reference cavity. However, the requirement of reducing the thickness of the pressure sensing film on the machining process of the micro-nano structure is high, and the preparation difficulty is high; increasing the area of the pressure sensing area inevitably causes the increase of the size of the sensor and reduces the integration level; if the saw device is placed at the edge of the reference cavity, the device is vulnerable to damage due to stress concentration and other effects. On the other hand, for the point-pressure type packaging structure, components such as a force-guiding thimble and the like are often adopted to convert pressure change into force-guiding change, so that the substrate deformation of the surface acoustic wave sensitive chip is aggravated, and the pressure sensitivity is improved. However, compared with a uniform thin plate type packaging structure, the sensor of the type is complex in structure and large in processing difficulty.
Therefore, for the surface acoustic wave pressure sensor, the pressure sensitivity is improved, and meanwhile, the problems that the pressure reference cavity is complex in structure, high in processing and preparation difficulty, increased in sensor volume or easy to damage in use and the like are still faced.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the defects of the prior art are overcome, and the high-sensitivity surface acoustic wave absolute pressure sensor is provided.
The technical solution of the invention is as follows:
a high sensitivity surface acoustic wave absolute pressure sensor comprising: the pressure sensing diaphragm, the surface acoustic wave resonator, the middle layer, the pressure reference cavity and the cover plate;
the pressure sensing diaphragm is in a uniform thin plate structure, the middle layer is positioned between the pressure sensing diaphragm and the cover plate, the pressure sensing diaphragm, the cover plate and the cover plate form an integral structure in a direct bonding or indirect bonding mode, and a pressure reference cavity is formed on the integral structure;
the surface acoustic wave resonator is arranged on the inner surface of the pressure sensing film and is positioned in the center of a pressure sensing area of the pressure reference cavity;
the pressure reference cavity is of a rectangular or oval structure, the short side or the short axis of the rectangle is parallel to the propagation direction of surface acoustic wave in the surface acoustic wave resonator, the length of the pressure reference cavity is greater than or equal to that of the surface acoustic wave resonator, and the long side or the long axis of the rectangle is parallel to the direction of the aperture of the surface acoustic wave resonator;
and the acoustic surface wave resonator bus bars are connected with output leads.
The pressure sensing film is an ST-X quartz substrate, an AT-X quartz substrate, a ZX-LiNbO3 substrate, a YZ-LiNbO3 substrate, a 128-degree YX-LiNbO3 substrate or an X-112-degree Y-LiTaO3 substrate.
The surface acoustic wave resonator is in a structure of a single-end-to-resonator, a two-transducer and two-end-to-resonator or a three-transducer and two-end-to-resonator.
The electrode of the surface acoustic wave resonator is made of Al, Au, Cu, Pt or a metal composite material.
The bus bar of the surface acoustic wave resonator is connected with an output lead, the lead is led out from the first surface of the middle layer, the first surface of the middle layer is the surface of the middle layer contacted with the pressure sensing film, a lead bonding pad is arranged on the outer side of the middle layer, and the bonding pad is not covered by a cover plate.
The middle layer is made of insulating materials and is combined with the pressure sensing film and the cover plate in a direct bonding or indirect bonding mode to form the pressure reference cavity with air tightness.
The cover plate and the pressure-sensitive film are made of the same material, the thermal expansion coefficients of the intermediate layer material and the pressure-sensitive film material are close, and the difference value of the thermal expansion coefficients is +/-10%.
The pressure reference cavity is arranged on the middle layer and the cover plate, and the depth of the pressure reference cavity is larger than the maximum displacement value of the pressure sensing diaphragm when the sensor outputs full quantity.
Compared with the prior art, the invention has the following beneficial effects:
(1) the pressure reference cavity is of a rectangular or elliptical structure, the length of the short side of the rectangle or the short axis of the ellipse is larger than or equal to that of the surface acoustic wave resonator, the size of the reference cavity in the sound wave propagation direction is reduced, the stress change in the direction is increased, the problem that the volume of a sensor is increased due to the fact that the area of a pressure sensing area is increased in the prior art is solved, and the surface acoustic wave absolute pressure sensor with high sensitivity and small volume is realized.
(2) The surface acoustic wave absolute pressure sensor has the advantages of simple processing technology and good inheritance. The sensor adopts a uniform thin plate type packaging structure with simple process, the process is similar to the preparation of the traditional insulating cavity in the aspect of process realization, and the sensor has good process inheritance.
(3) The surface acoustic wave absolute pressure sensor has good long-term stability. The sensor adopts a mode of packaging the resonator in the reference cavity, so that the pollution of external gas, moisture or particulate matters is avoided, and meanwhile, the sensor is prepared by adopting a membrane material with similar thermal expansion coefficient, so that the thermal stress is inhibited to the maximum extent, and the stability is improved.
Drawings
FIG. 1 is a schematic structural diagram of a high-sensitivity SAW absolute pressure sensor according to the present invention;
FIG. 2 is a top view of a rectangular pressure reference chamber according to an embodiment of the present invention;
FIG. 3 is a top view of an elliptical pressure reference chamber according to an embodiment of the present invention;
FIG. 4 is a test plot of frequency response of a single-ended to SAW resonator according to an embodiment of the present invention;
fig. 5 shows the test response results of the pressure sensor with the oval structure and the pressure sensor with the existing round structure according to the embodiment of the invention to the gas pressure, wherein the test environment gas is pure and dry nitrogen.
Detailed Description
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
As shown in fig. 1, the present invention provides a high-sensitivity surface acoustic wave absolute pressure sensor, including: the pressure sensing diaphragm comprises a pressure sensing diaphragm 1, an acoustic surface wave resonator 2, an intermediate layer 3, a pressure reference cavity 4 and a cover plate 5;
the pressure sensing diaphragm 1 is of a uniform thin plate structure, the middle layer 3 is positioned between the pressure sensing diaphragm 1 and the cover plate 5, the three form an integral structure in a direct bonding or indirect bonding mode, and a pressure reference cavity 4 is formed on the integral structure;
the surface acoustic wave resonator 2 is arranged on the inner surface of the pressure sensing diaphragm 1 and is positioned in the center of a pressure sensing area of the pressure reference cavity 4;
the pressure reference cavity 4 is of a rectangular or oval structure, the short side or the short axis of the rectangle is parallel to the propagation direction of the surface acoustic wave in the surface acoustic wave resonator 2, the length of the pressure reference cavity is greater than or equal to that of the surface acoustic wave resonator 2, and the long side or the long axis of the rectangle is parallel to the direction of the acoustic aperture in the surface acoustic wave resonator 2;
and output leads are connected to the bus bars of the surface acoustic wave resonator 2.
The pressure sensing film 1 is an ST-X quartz substrate, an AT-X quartz substrate, a ZX-LiNbO3 substrate, a YZ-LiNbO3 substrate, a 128-degree YX-LiNbO3 substrate or an X-112-degree Y-LiTaO3 substrate.
The surface acoustic wave resonator 2 is a one-end-to-resonator, a two-transducer two-end-to-resonator, or a three-transducer two-end-to-resonator structure. The electrode of the surface acoustic wave resonator 2 is made of Al, Au, Cu, Pt or metal composite material.
The bus bar of the surface acoustic wave resonator 2 is connected with an output lead, the lead is led out from the first surface of the middle layer 3, the first surface of the middle layer 3 is the surface of the middle layer 3 contacted with the pressure sensing film 1, a lead pad is arranged on the outer side of the middle layer 3, and the pad is not covered by the cover plate 5.
The middle layer 3 is made of insulating materials and is combined with the pressure sensing diaphragm 1 and the cover plate 5 in a direct bonding or indirect bonding mode to form a pressure reference cavity 4 with air tightness.
The cover plate 5 and the pressure sensing film 1 are made of the same material, the thermal expansion coefficients of the material of the middle layer 3 and the material of the pressure sensing film 1 are close, and the difference value of the thermal expansion coefficients is +/-10%.
The pressure reference cavity 4 is arranged on the middle layer 3 and the cover plate 5, and the depth of the pressure reference cavity 4 is larger than the maximum displacement value of the pressure sensing diaphragm when the sensor outputs full quantity.
Example (b):
the pressure sensing film is AT-X quartz (Euler angle (0 degree, 54.7 degree, 0 degree)) piezoelectric film. The surface acoustic wave resonator adopts a single-end-to-resonator structure, is prepared by selecting a metal Al electrode, and is connected with an output lead at a bus bar. The surface acoustic wave resonator is arranged on the inner surface of the pressure sensing film and is positioned in the center of a pressure sensing area of the pressure reference cavity, and the size of the surface acoustic wave resonator is 3mm multiplied by 2 mm.
The middle layer is made of insulating material, and the thermal expansion coefficient is similar to that of the pressure sensing film. The cover plate is an AT-X quartz piezoelectric sheet, and the thermal expansion coefficient of the cover plate is consistent with that of the pressure sensing film. The vacuum pressure reference cavity is realized by means of direct bonding.
In the conventional manner, a square or circular pressure reference chamber is used. According to theoretical measurement, when the square pressure reference cavity is adopted, the square pressure reference cavity with the side length of 4mm is generally selected for covering the size of a device, and the pressure sensitivity is-133.64 kHz/MPa. However, according to the rectangular pressure reference cavity provided by the invention, the short side (3.2mm) is parallel to the propagation direction of the surface acoustic wave, the long side (4mm) is parallel to the acoustic aperture direction, and the surface acoustic wave resonator 2 is placed at the center of the pressure sensing film, as shown in fig. 2, through theoretical calculation, the pressure sensitivity of the rectangular pressure reference cavity 4 in the embodiment of the invention is-167.14 kHz/MPa, so that the sensitivity of the rectangular pressure reference cavity in the embodiment of the invention is improved by 25% compared with that of the conventional structure.
If a circular pressure reference cavity is adopted, the circular pressure reference cavity with the diameter of 4mm is selected, and the pressure sensitivity is-116.40 kHz/MPa. The elliptical pressure reference cavity 4 of the invention has a minor axis (3.2mm) parallel to the propagation direction of the surface acoustic wave and a major axis (4mm) parallel to the acoustic aperture direction, the surface acoustic wave resonator 1 is placed at the center of the pressure sensing film, and the pressure sensitivity is-142.24 kHz/MPa, as shown in FIG. 3. Therefore, theoretically, the sensitivity of the elliptical pressure reference cavity in the embodiment of the invention is improved by 22% compared with that of the conventional circular structure.
Through testing, the center frequency of the surface acoustic wave resonator in the embodiment of the invention is 432.95MHz, the insertion loss is 20.94dB, and a frequency response test curve is shown in FIG. 4.
The pressure sensor with the oval structure and the existing pressure sensor with the round structure in the embodiment of the invention are utilized to respectively detect the gas pressure (the dimension parameters are shown in the above), the testing environment gas is pure and dry nitrogen, the actual detection result is shown in figure 5, the abscissa represents the pressure change, and the ordinate represents the output frequency change of the sensor, so that the following results are shown: the sensitivity of the pressure sensor with the oval structure in the embodiment of the invention is-133.33 kHz/MPa, and compared with the existing pressure sensor with the round structure (the sensitivity is-106.25 kHz/MPa), the sensitivity is actually improved by 25.5%. Therefore, the surface acoustic wave pressure sensor has higher sensitivity.
The invention overcomes the technical problems of complicated structure of a pressure reference cavity, high processing and preparation difficulty, increased sensor volume or easy damage in use and the like in the conventional method for improving the sensitivity of the surface acoustic wave pressure sensor, and provides the surface acoustic wave absolute pressure sensor with high sensitivity.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Those skilled in the art will appreciate that the invention may be practiced without these specific details.
Claims (8)
1. A high-sensitivity surface acoustic wave absolute pressure sensor is characterized by comprising: the pressure sensing diaphragm comprises a pressure sensing diaphragm (1), a surface acoustic wave resonator (2), an intermediate layer (3), a pressure reference cavity (4) and a cover plate (5);
the pressure sensing film (1) is of a uniform thin plate structure, the middle layer (3) is positioned between the pressure sensing film (1) and the cover plate (5), the three layers form an integral structure in a direct bonding or indirect bonding mode, and a pressure reference cavity (4) is formed on the integral structure;
the surface acoustic wave resonator (2) is arranged on the inner surface of the pressure sensing diaphragm (1) and is positioned in the center of a pressure sensing area of the pressure reference cavity (4);
the pressure reference cavity (4) is of a rectangular or oval structure, the short side or the short axis of the rectangle is parallel to the propagation direction of surface acoustic wave in the surface acoustic wave resonator (2), the length of the short side or the short axis of the rectangle is greater than or equal to that of the surface acoustic wave resonator (2), and the long side or the long axis of the rectangle is parallel to the direction of the aperture of the sound in the surface acoustic wave resonator (2);
the bus bars of the surface acoustic wave resonator (2) are connected with output leads;
the size of the pressure sensing film (1) in the sound propagation direction is larger than that of the pressure reference cavity (4);
when the pressure reference cavity (4) is of a rectangular structure, the length of the short side is 3.2mm, and the length of the long side is 4 mm; when the pressure reference cavity (4) is of an elliptical structure, the minor axis is 3.2mm and the major axis is 4 mm.
2. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 1, wherein: the pressure sensing film (1) is an ST-X quartz substrate, an AT-X quartz substrate, a ZX-LiNbO3 substrate, a YZ-LiNbO3 substrate, a 128-degree YX-LiNbO3 substrate or an X-112-degree Y-LiTaO3 substrate.
3. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 1, wherein: the surface acoustic wave resonator (2) is in a structure of a single-end-to-resonator, a two-transducer and two-end-to-resonator or a three-transducer and two-end-to-resonator.
4. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 3, wherein: and the electrode of the surface acoustic wave resonator (2) is made of Al, Au, Cu, Pt or a metal composite material.
5. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 4, wherein: the bus bar department of surface acoustic wave resonator (2) connects the output lead, and the lead is drawn forth from intermediate level (3) first surface, intermediate level (3) first surface is the surface that intermediate level (3) and pressure sensing diaphragm (1) contacted, and the lead wire pad sets up in the outside of intermediate level (3), and the pad is not covered by apron (5).
6. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 1, wherein: the middle layer (3) is made of insulating materials and is combined with the pressure sensing film (1) and the cover plate (5) in a direct bonding or indirect bonding mode to form a pressure reference cavity (4) with air tightness.
7. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 1, wherein: the cover plate (5) and the pressure sensing film (1) are made of the same material, the thermal expansion coefficients of the material of the middle layer (3) and the material of the pressure sensing film (1) are close, and the difference value of the thermal expansion coefficients is +/-10%.
8. A high-sensitivity surface acoustic wave absolute pressure sensor according to claim 1, wherein: the pressure reference cavity (4) is arranged on the middle layer (3) and the cover plate (5), and the depth of the pressure reference cavity (4) is larger than the maximum displacement value of the pressure sensing diaphragm when the sensor outputs full quantity.
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| CN115356009B (en) * | 2022-07-05 | 2024-08-09 | 北京遥测技术研究所 | Surface acoustic wave temperature and pressure composite sensor with double-chamber structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1177863A (en) * | 1996-08-29 | 1998-04-01 | 西门子公司 | Sound surface-wave device i. e. identification device or sensor using surfacewave to work |
| CN1254986A (en) * | 1998-11-10 | 2000-05-31 | 株式会社村田制作所 | Surface acoustic wave (SAW) device |
| CN1269610A (en) * | 1999-04-07 | 2000-10-11 | 株式会社村田制作所 | Edge-reflection type sound-surface-wave device |
| CN1479862A (en) * | 2000-10-10 | 2004-03-03 | ���м�������˾ | Pressure monitor incorporating surface sound wave device |
| CN102042844A (en) * | 2010-10-20 | 2011-05-04 | 李天利 | Sound surface wave measuring sensor and parameter analytical method |
| CN103532516A (en) * | 2013-08-05 | 2014-01-22 | 天津大学 | Bulk wave resonator and manufacturing method thereof |
| CN108871627A (en) * | 2018-07-16 | 2018-11-23 | 重庆大学 | A kind of difference double resonance type acoustic wave pressure sensor |
| CN109405887A (en) * | 2018-12-07 | 2019-03-01 | 黑龙江东方学院 | A kind of surface acoustic wave sensor and detection method measuring torque and temperature |
| CN110672715A (en) * | 2019-09-24 | 2020-01-10 | 南京邮电大学 | Novel surface acoustic wave sensor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006231583A (en) * | 2005-02-23 | 2006-09-07 | Seiko Epson Corp | Manufacturing method for liquid jet head and liquid jet head |
| EP1764597B1 (en) * | 2005-09-16 | 2011-03-23 | STMicroelectronics Srl | Surface acoustic wave pressure sensor |
| CN101674063A (en) * | 2008-09-10 | 2010-03-17 | 中国科学院声学研究所 | Surface acoustic wave filter bank having trap function |
| CN101552597A (en) * | 2009-05-14 | 2009-10-07 | 北京中讯四方科技有限公司 | 3G high rectangle factor acoustic surface wave filter and uses thereof |
| CN101625274B (en) * | 2009-08-06 | 2011-01-05 | 浙江大学 | Acoustic surface wave pressure sensor and acoustic surface wave temperature sensor |
| CN105784189B (en) * | 2016-05-05 | 2018-12-25 | 厦门纵能电子科技有限公司 | Si-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation |
| CN109374157B (en) * | 2018-09-14 | 2020-11-20 | 北京遥测技术研究所 | Surface acoustic wave pressure sensor based on loss detection |
-
2020
- 2020-06-10 CN CN202010525496.XA patent/CN111623917B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1177863A (en) * | 1996-08-29 | 1998-04-01 | 西门子公司 | Sound surface-wave device i. e. identification device or sensor using surfacewave to work |
| CN1254986A (en) * | 1998-11-10 | 2000-05-31 | 株式会社村田制作所 | Surface acoustic wave (SAW) device |
| CN1269610A (en) * | 1999-04-07 | 2000-10-11 | 株式会社村田制作所 | Edge-reflection type sound-surface-wave device |
| CN1479862A (en) * | 2000-10-10 | 2004-03-03 | ���м�������˾ | Pressure monitor incorporating surface sound wave device |
| CN102042844A (en) * | 2010-10-20 | 2011-05-04 | 李天利 | Sound surface wave measuring sensor and parameter analytical method |
| CN103532516A (en) * | 2013-08-05 | 2014-01-22 | 天津大学 | Bulk wave resonator and manufacturing method thereof |
| CN108871627A (en) * | 2018-07-16 | 2018-11-23 | 重庆大学 | A kind of difference double resonance type acoustic wave pressure sensor |
| CN109405887A (en) * | 2018-12-07 | 2019-03-01 | 黑龙江东方学院 | A kind of surface acoustic wave sensor and detection method measuring torque and temperature |
| CN110672715A (en) * | 2019-09-24 | 2020-01-10 | 南京邮电大学 | Novel surface acoustic wave sensor |
Non-Patent Citations (2)
| Title |
|---|
| 基于氮化铝压电薄膜的声表面波（SAW）高温力学传感器研究;窦韶旭;《中国博士学位论文全文数据库信息科技辑》;20190915(第9期);第37-38页第3.2.3节、第43页第3.3.5节，图3.6-3.8 * |
| 声表面波传感器及无源胎压监测模拟试验研究;谭六喜;《中国博士学位论文全文数据库信息科技辑》;20091215(第12期);第36页第1段、第43页倒数第1段-第44页第1段、第47页第3.2.1节、第87页第4.1.2节、第93页第1段、第105页第5.3.1节、第108页第2-3段，图5.11 * |
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