CN100394154C - Pressure resistance type high frequency dynamic low voltage sensor - Google Patents
Pressure resistance type high frequency dynamic low voltage sensor Download PDFInfo
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- CN100394154C CN100394154C CNB2005100384587A CN200510038458A CN100394154C CN 100394154 C CN100394154 C CN 100394154C CN B2005100384587 A CNB2005100384587 A CN B2005100384587A CN 200510038458 A CN200510038458 A CN 200510038458A CN 100394154 C CN100394154 C CN 100394154C
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Abstract
The present invention relates to a pressure resistance type high frequency dynamic low voltage sensor which is composed of a pressure resistance sensitive assembly, a sensor base, a repeater circuit and a leading out cable, wherein the pressure resistance sensitive assembly is composed of a silicon pressure resistance sensitive element and a glass circle sheet. The silicon pressure resistance sensitive element is a C type or an E type square flat silicon film which is provided with a force sensitive area; the front surface of the film is covered with Si3N4 and SiO2 layers; the front surface of the force sensitive area is provided with a Wheatstone bridge and leads out electrodes; an edge hard frame of the back surface of the force sensitive area is covered with the Si3N4 and the SiO2 layers and welded with the glass circle sheet. The electrodes are welded with inner gold wires; the other surface of the glass circle sheet is fixed to the surface of a circle pit at the pressure entrance end of the sensor base by the metal circle sheet; the back surface of a silicon chip is flush with the pressure entrance end surface of the sensor base; the other end of the inner gold wires is welded with the repeater circuit; a core wire of the leading out cable is welded with the repeater circuit; the tail end of the sensor base is fixed with a tube cap of a sensor in a screw way; the leading out cable is led out from a bottom opening of the tube cap and fixed with the tube cap of the sensor based on a wire pressing cap. An HF amplifying circuit is connected between the repeater circuit and the leading out cable, and the high frequency amplification of signal transmission is realized.
Description
Technical field
The present invention relates to a kind of pressure resistance type high frequency dynamic low voltage sensor, be particularly related to a kind of high frequency dynamic piezo-resistance low pressure sensor, be specially adapted to the dynamic pressure measurement of aerodynamics test (being commonly called as wind tunnel test), hydraulic engineering, Aero-Space, weapons test, boats and ships etc. based on MEMS (Micro Electro Mechanical System) silicon body micromachining technology.
Background technology
The making that the silicon body micromachining technology of MEMS (Micro Electro Mechanical System) technology is used for piezoresistive pressure sensor starts from the later stage seventies 20th century, utilize the piezoresistive effect of silicon, with planar integrated circuit technology certain crystal orientation on silicon chip, the strain detecting voltage dependent resistor (VDR) that certain position is made into methods such as oxide-diffused or ion implantation doping, photoetching, and interconnection constitutes test Hui Sidun strain bridge.Use the double-sided alignment photoetching, silicon 3 D processing technologys such as the anisotropic etch of silicon, the power sensitive film structure that silicon substrate is made into periphery fixed is to replace traditional mechanical lapping processing silicon cup technology.The silicon piezoresistive pressure sensor that the above-mentioned silicon body of this usefulness micromachined technology is made has the advantage of silicon piezoresistive pressure sensor lower range, high sensitivity, high natural frequency.
Kulite company has adopted C type plane film force sensing structure; In order to improve the linearity and the frequency response under the lower range, Endevco company has adopted the twin islet membrane structure, and they all have merits and demerits separately.
When being used for kinetic measurement, generally require sensor that high Dynamic response is arranged, for this reason, the encapsulation of sensor can not form tube chamber, must direct the facing of presser sensor diaphragm meet to pressure.The silicon chip of the high-frequency pressure sensor product of Kulite company encapsulation itself has good Dynamic response performance, but a metallic film calotte with laser boring is blocked in its place ahead in the silicon chip front, and this structure has a strong impact on the use Dynamic response.
Summary of the invention
In order to address the above problem, the invention provides a kind of based on the MEMS technology can be used for the pressure dynamic test have the high dynamic response frequency, highly sensitive, by force anti-interference, below the rise time μ S level, lower range, high frequency dynamic piezo-resistance low pressure sensor that dynamic property is good.
Technical scheme of the present invention is to constitute like this:
A kind of pressure resistance type high frequency dynamic low voltage sensor is made up of piezoresistance sensitivity assembly, sensor base, built-up circuit and outgoing cable,
1. this piezoresistance sensitivity assembly is made up of silicon piezoresistance sensitivity element and glass ring plate, and this silicon piezoresistance sensitivity element is the flat silicon diaphragm in side with the quick district of square power, and this silicon diaphragm front is coated with SiO successively
2Layer and Si
3N
4Layer, there is Hui Sidun strain full-bridge in front, the quick district of this power and draws resistance electrode, and dorsal edge hard frame in the quick district of this power is coated with Si successively
3N
4Layer and SiO
2Layer also is welded in polishing Pyrex or GG-17 glass ring plate, forms this piezoresistance sensitivity assembly, and this resistance electrode is welded in spun gold internal lead one end;
2. the belt pit face bonding or the weld metal ring plate that are provided with of this sensor base entrance pressure port, the end face of this metal ring plate lateral surface and this sensor base entrance pressure port, the glass ring plate another side of this piezoresistance sensitivity assembly sticks on this metal ring plate medial surface, the silicon diaphragm back side of realizing this piezoresistance sensitivity assembly flushes encapsulation with the end face standard of this sensor base entrance pressure port, this spun gold internal lead other end is welded to this built-up circuit, the heart yearn of this outgoing cable is welded in this built-up circuit, realizes this spun gold internal lead and corresponding heart yearn conducting;
3. the afterbody of this sensor base is rotated with the sensor pipe cap that is used to encapsulate this sensor, and this outgoing cable is drawn by this sensor pipe cap bottom ports, and is fixed in this sensor pipe cap based on Wire crimping cap.
As a further improvement on the present invention, the flat silicon diaphragm of this side back side has C type structure, the membranous part position that dorsal edge hard frame in the quick district of this power surrounds exposes silicon, the membranous part position that dorsal edge hard frame in the quick district of this power surrounds exposes silicon, is 50 μ-150 μ with respect to the silicon diaphragm thickness of this cell pressure range 0～200Kpa-2MPa.
As a further improvement on the present invention, the flat silicon diaphragm of this side back side has E type structure, and the back side, the quick district of this power is provided with and is coated with Si successively
3N
4Layer and SiO
2Layer central island, the membranous part position that is surrounded by the hard frame of this central island and edge exposes silicon, is 15 μ-60 μ corresponding to the silicon diaphragm thickness of this cell pressure range 0～10Kpa-200KPa.
As a further improvement on the present invention, this metal ring plate and this sensor base are integral.
As a further improvement on the present invention, the flat silicon diaphragm of this side adopts the silicon single crystal of high Young's modulus of elasticity.
As a further improvement on the present invention, the resistance of this Hui Sidun strain full-bridge has the following resistance of 1K Ω.
As a further improvement on the present invention, this built-up circuit is the interior PCB card extender (14) of cavity that is fixed in this sensor base.
As a further improvement on the present invention, be connected to the high frequency bandwidth amplifying circuit of integrated encapsulation between this built-up circuit and this outgoing cable, realize that the transmission signals high frequency amplifies, this high frequency bandwidth amplifying circuit had up to the bandwidth of 100KHz and the rise time of 1 μ S.
As a further improvement on the present invention, this high frequency bandwidth amplifying circuit is made up of the two-stage amplifying circuit, first order amplifying circuit adopts amplifier AD620 and 5-10 doubly the enlargement ratio of unity gain bandwidth height to 1MHz, and second level amplifying circuit adopts amplifier OP37 and 10-40 doubly the enlargement ratio of unity gain bandwidth height to 30MHz.
As a further improvement on the present invention, this polishing Pyrex or GG-17 glass ring plate thickness are 2-4mm, this spun gold internal lead is φ 25-φ 40 μ m, and this pressure resistance type high frequency dynamic low voltage sensor has 138K-600KHz natural frequency, 0-40KHz to 0-200KHz bandwidth and 1.0-0.2 μ S rise time.
The invention has the beneficial effects as follows:
The tactiosensible material of this high frequency dynamic low voltage sensor adopts the silicon single crystal of high Young's modulus of elasticity, pressure-sensitive diaphragm is the flat silicon diaphragm in side of the periphery fixed of very small dimensions, utilize the conversion of piezoresistive principles realizable force electricity, micromachining technology to make silicon pressure resistance photosensitive elements, thereby sensitive element has more than the 100KHz, high natural frequency until 1500KHz, 1 μ S-0.2 μ S is exceedingly fast the rise time, and the LF-response characteristic that is low to moderate zero hertz.
The flat silicon diaphragm in side adopts C type or E type island film compound mechanics structural design to solve the problem of lower range sensitivity.Because the low 1-2mm of the quick chip of the power pressure-sensitive face ratio sensor pedestal entrance pressure port of this pressure transducer of lower range, be that typical standard flushes package design, the center pit that this standard flushes package design metal ring plate over against the quick district of power of the quick silicon of this power, the cylindrical hole that has only 1-2mm between the quick chip of entrance pressure port and power, do not form T type tube chamber effect, thereby this sensor has very outstanding dynamic test performance and anti-light interference, satisfies the response frequency of dynamic test testing requirements fully.
When test request sensor extension line oversize, for avoiding interference, during customer requirements sensor output high level signal, adopt the high-frequency wideband amplifier of integrated encapsulation, realize 50-400 enlargement ratio doubly, guaranteed that this sensor can reach utilized bandwidth 100KHz, dynamically the amplitude-frequency error is less than 1%, rise time has been avoided the big weakness of its small-signal noise simultaneously again less than the high Dynamic response of 1 μ S.
Description of drawings
Fig. 1 is the cross-sectional view of the flat silicon diaphragm in C type side in the quick district of the power of having of the present invention;
Fig. 2 is the cross-sectional view of the flat silicon diaphragm in E type side in the quick district of the power of having of the present invention;
Fig. 3 is that the flat silicon diaphragm of side of the present invention and Pyrex glass ring plate form the structural representation that piezoresistance sensitivity assembly and interior outer lead are drawn;
Fig. 4 is the structural representation that sensor standard of the present invention flushes encapsulation;
Fig. 5 is the sensor construction synoptic diagram that has the high-frequency wideband amplifier of the present invention;
Fig. 6 is the circuit theory diagrams of the high-frequency wideband amplifier that the present invention relates to.
Fig. 1 to Fig. 6 is done following further specifying:
1-Si
3N
4Layer 13-zero type circle
2-SiO
2Layer 14-PCB card extender
3-film 15-outgoing cable
The hard frame in 4-edge
5-central island 16-sensor pipe cap
7-Pyrex glass ring plate 17-Wire crimping cap
The solid grillage of 8-metal ring plate 18-
The flat silicon diaphragm 19-in 10-side transit cable
11-spun gold internal lead 20-high-frequency wideband amplifies
The road
The 12-sensor base
Embodiment
High frequency dynamic low voltage sensor adopts side's flat film utilization standard of the periphery fixed of MEMS silicon body micromachined technology making to flush encapsulation, eliminate of the influence of tube chamber effect to dynamic test, realization is to the real-time measurement of dynamic pressure, adopt the high-frequency wideband amplifier, when guaranteeing to have enough high frequency sound, avoided the big weakness of its small-signal noise again.Implementation step according to as Fig. 1 to realization shown in Figure 6:
Fig. 1 is the flat silicon diaphragm in C type side with the quick district of square power, will cover the thick SiO of 1 μ m on the two sides with traditional thermal oxidation technique earlier in the processing of MEMS technology as the twin polishing silicon chip of flexible member
2Layer 2, the LPCVD method with standard covers the thick Si of 3000A on the two sides again
3N
4Layer 1 is used the Twi-lithography technology, etches away the quick district of the positive square power of this silicon diaphragm Si at position in addition
3N
4Layer and SiO
2Layer, the Si that the hard frame of preserving edge position covers
3N
4Layer and SiO
2Layer.Above-mentioned silicon chip silicon body micromachined technology by standard in the KOH corrosive liquid is carried out anisotropic etch, owing to be reserved in the Si at hard frame position, edge
3N
4Layer and SiO
2The corrosion masking action of layer forms C type Elasticity sensitive structure.With dual surface lithography technology and ion implantation doping technology, be made into Hui Sidun strain full-bridge and draw the electrode of strain resistor at the front ad-hoc location of the flat silicon diaphragm of this side.Above-mentioned not in detail the narration all be the integrated circuit technology of standard.
Fig. 2 is the flat silicon diaphragm in E type side with the quick district of square power, will cover the thick SiO of 1 μ m on the two sides with traditional thermal oxidation technique earlier in the processing of MEMS technology as the twin polishing silicon chip of flexible member
2Layer 2, the LPCVD method with standard covers the thick Si of 3000A on the two sides again
3N
4Layer 1 is used the Twi-lithography technology, etches away this silicon diaphragm back side and is equivalent to the Si at central island position from now on
3N
4The Si of layer, membranous part position
3N
4Layer and SiO
2Layer keeps the SiO that the central island position covers
2Layer, the Si that the hard frame of preserving edge position covers
3N
4Layer and SiO
2Layer.Above-mentioned silicon chip silicon body micromachined technology by standard in the KOH corrosive liquid is carried out anisotropic etch, owing to be reserved in the SiO at position, island
2The corrosion masking action of layer forms island---film composite elastic mechanics sensitive structure.With dual surface lithography technology and ion implantation doping technology, on the island---the front ad-hoc location of film composite elastic chip is made into Hui Sidun strain full-bridge and draws the electrode of strain resistor.Above-mentioned not in detail the narration all be the integrated circuit technology of standard.
Fig. 3 is the piezoresistance sensitivity group that the flat silicon diaphragm in Fig. 1 or Fig. 2 side is formed, and utilizes static bonding process that hard frame zone, this edge and thickness is welded together for the polishing Pyrex glass ring plate 7 of 2-4mm.Adopt the spun gold 11 of 4 or 5 φ 25-φ 40 μ m to be internal lead again, with special gold wire bonder the electrode that one end of spun gold is welded on Hui Sidun strain full-bridge is drawn on the piece, and the another side of this glass ring is sticked on a slice center with epoxide-resin glue have on the metal ring plate 8 of ф 0.5-1.2mm aperture, thickness 1-2mm and constitute the presser sensor assembly.
Fig. 4 is the sensor construction synoptic diagram that standard flushes encapsulation, with the metal ring plate 8 usefulness epoxy glues of the quick assembly of power shown in Figure 3 bonding or be laser-welded in the pit of these sensor base 12 entrance pressure port central authorities, make metal ring plate lateral surface just in time with the end face of this sensor base entrance pressure port.Also this metal ring plate and this sensor base can be designed to one, then glass ring not had an end of silicon chip to paste the position that is equivalent to the metal ring plate with epoxide-resin glue.The other end of spun gold internal lead 11 is welded on the PCB card extender 14, and the heart yearn of sensor outgoing cable 15 is welded on the corresponding pcb board, thus the switching of outer lead in realizing.
This sensor base afterbody is rotated with the sensor pipe cap 16 that is used to encapsulate this sensor, this outgoing cable is drawn by this sensor pipe cap bottom ports, and be fixed in this sensor pipe cap based on Wire crimping cap 17, can be provided with zero type circle 13 between this sensor base afterbody and this sensor pipe cap and between this Wire crimping cap and this sensor pipe cap.
Fig. 5 is the sensor construction synoptic diagram that has the two-stage amplifying circuit, this spun gold internal lead is connected with high-frequency wideband amplification circuit 20 with transit cable by the PCB card extender, this high-frequency wideband amplification circuit is fixing based on the solid grillage in this sensor cavity 18, heart yearn with this outgoing cable is welded on this high-frequency wideband amplification circuit again, thereby the high frequency of realizing sensor signal amplifies.
When test request sensor extension line oversize, thereby for avoid interference, during customer requirements sensor output high level signal, adopt the high-frequency wideband amplifier of integrated encapsulation, this amplifier has high utilized bandwidth, the rise time of 1 μ S and extremely low low-frequency noise to 0-100KHz.
This high frequency bandwidth amplifying circuit is made up of the two-stage amplifying circuit, the first order adopts unity gain bandwidth that the AD620 of 1MHz is only arranged, it has extremely excellent low-noise characteristic, it is the low noise assurance of amplifying circuit, the first order adopts 4-10 low enlargement ratio doubly, thereby AD620 still has the frequency response of 800KHz at this moment, because it has higher slew rate, be again that small-signal amplifies, so the rise time that can guarantee 1 μ S; The second level amplifies to adopt the high fdrequency instrument amplifier OP37 of height to the unity gain bandwidth of 30MHz, adopts 10-40 enlargement ratio doubly, thereby has sufficiently high frequency response to guarantee, has avoided the big weakness of its small-signal noise simultaneously again.
Fig. 6 is the circuit theory diagrams embodiment of the high-frequency wideband amplifier that the present invention relates to, and this high-frequency wideband amplifier is made up of three parts, wherein:
1, LM317 and R5, D1, C6, C7 consist of the constant-current supply that sensor provides work, can determine the R5 size decision constant current size that LM317 provided according to formula I=1.25/R, the filtering circuit of D1, C6, the constant current of C7 composition is used to remove the interference and the noise of power supply.
2, AD620 and R1, C1, C8, C9, C2, R2 form the first order amplification of this high-frequency wideband amplifier, R1 is a fixed resistance, its value size is R=49.4K/ (G-1), (G=4～10) are connected across between 1,8 pin of AD620, this grade enlargement factor is fixed as 4～10 times, make AD620 under this enlargement factor, have, have higher frequency response simultaneously than low noise; C1 is connected across and is used for the sensor input noise of filtering 800～1MHz between 2,3 pin of AD620; C8, C9 are used for the interference noise of filtering AD620 working power; C2, R2 form AD620 and amplify its signal interference of filtering circuit filtering that output signal is the OP37 input signal.
3, OP37 and C3, C4, C5, R3, R4, W2 and R3, W1 forms the second level of this amplifying circuit and amplifies, W1, W2 is three end adjustable resistances (potentiometer), R3, W2, R4 is connected across 1 pin of OP37, on 7 pin and 8 pin, this part is formed the zero-bit regulating circuit of the zero-bit mistuned circuit of OP37 as this high-frequency wideband amplifier, and R3, W1 is connected across 2 pin of OP37 respectively, between 6 pin and the power supply ground as the adjusting of the enlargement factor of second level amplifying circuit, C3, C4, C5 forms the power supply of second level amplifying circuit and the filtering of signal output, the filtering circuit that disturbs as the signal of second level amplifying circuit
The range of this high frequency dynamic low voltage sensor is by the flat silicon diaphragm THICKNESS CONTROL in side in the quick district of the square power of having of micromachined, and the control of diaphragm thickness is finished by anisotropy rot etching technique and the thick four electrodes chemistry of accurate control corrosion device.Flat silicon diaphragm (10) back side, side has C type structure, is 50 μ-150 μ with respect to the silicon diaphragm thickness of this cell pressure range 0～200Kpa-2MPa; Flat silicon diaphragm (10) back side, side has E type structure, is 15 μ-60 μ corresponding to the silicon diaphragm thickness of range 0～10Kpa-200KPa.
The silicon diaphragm back side of this high frequency dynamic low voltage sensor and the entrance pressure port of this sensor base are apart from 1-2mm, be that typical standard flushes package design, eliminated of the influence of pressure tube chamber effect to its dynamic test, fully guarantee the Dynamic response characteristic of sensor, satisfied the response frequency of dynamically pressure testing testing requirements fully.
This high frequency dynamic low voltage sensor can be realized 50-400 enlargement ratio doubly by the broad band amplifier that two-stage is amplified, guaranteed that this sensor can reach gain bandwidth (GB) 800KHz, rise time has been avoided the big weakness of its small-signal noise simultaneously again less than the high Dynamic response of 1 μ S.
This high frequency dynamic low voltage sensor function admirable, stable, antijamming capability is strong, can be used for the purposes of the high sensitivity dynamically pressure testing of operating modes such as aerodynamics test, and market outlook are preferably arranged.
The main performance index of product of the present invention is;
1, range: 0～10KPa-2MPa, output sensitivity: 15～100mV or 0-5V
2, precision: 0.1%～0.01%FS
3, natural frequency: 0～150-600KHz
4, utilized bandwidth: 0～50-200KHz
5, the rise time: 1-0.2 μ S
6, time stability :≤0.1mV
7, temperature stability :≤5 * 10
-4/ ℃ FS.
Claims (10)
1. a pressure resistance type high frequency dynamic low voltage sensor is made up of piezoresistance sensitivity assembly, sensor base (12), built-up circuit and outgoing cable (15), it is characterized in that:
1) this piezoresistance sensitivity assembly is made up of silicon piezoresistance sensitivity element and glass ring plate, and this silicon piezoresistance sensitivity element is the flat silicon diaphragm in side (10) with the quick district of square power, and this silicon diaphragm front is coated with SiO successively
2Layer (2) and Si
3N
4Layer (1), there is Hui Sidun strain full-bridge in front, the quick district of this power and draws resistance electrode, and the hard frame of the quick district of this power dorsal edge (4) covers SiO successively
2Layer (2) and Si
3N
4Layer (1) also is welded in polishing Pyrex or GG-17 glass ring plate (7), forms this piezoresistance sensitivity assembly, and this resistance electrode is welded in spun gold internal lead (11) one ends;
2) the circular pit face bonding or the weld metal ring plate (8) that are provided with of this sensor base entrance pressure port, the end face of this metal ring plate lateral surface and this sensor base entrance pressure port, the glass ring plate another side of this piezoresistance sensitivity assembly sticks on this metal ring plate medial surface, the silicon diaphragm back side of realizing this piezoresistance sensitivity assembly flushes encapsulation with the end face standard of this sensor base entrance pressure port, this spun gold internal lead other end is welded to this built-up circuit, the heart yearn of this outgoing cable is welded in this built-up circuit, realizes this spun gold internal lead and corresponding heart yearn conducting;
3) afterbody of this sensor base is rotated with the sensor pipe cap (16) that is used to encapsulate this sensor, and this outgoing cable is drawn by this sensor pipe cap bottom ports, and is fixed in this sensor pipe cap based on Wire crimping cap (17).
2. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 1 is characterized in that, the flat silicon diaphragm of this side (10) back side has C type structure, and film (3) position that dorsal edge hard frame in the quick district of this power surrounds exposes silicon.
3. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 1 is characterized in that, the flat silicon diaphragm of this side (10) back side has E type structure, and the back side, the quick district of this power is provided with and covers SiO
2Layer (2) central island (5), film (3) position that is surrounded by the hard frame of this central island and edge exposes silicon.
4. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 1 is characterized in that, this metal ring plate and this sensor base are integral.
5. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 1 is characterized in that, the flat silicon diaphragm of this side adopts the silicon single crystal of high Young's modulus of elasticity.
6. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 1 is characterized in that, the resistance of this Hui Sidun strain full-bridge has the following resistance of 1K Ω.
7. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 1 is characterized in that, this built-up circuit is the interior PCB card extender (14) of cavity that is fixed in this sensor base.
8. as claim 1,2 or 3 described a kind of pressure resistance type high frequency dynamic low voltage sensors, it is characterized in that, be connected to the high frequency bandwidth amplifying circuit (20) of integrated encapsulation between this built-up circuit and this outgoing cable, realize that the transmission signals high frequency amplifies, this high frequency bandwidth amplifying circuit had up to the bandwidth of 100KHz and the rise time of 1 μ S.
9. a kind of pressure resistance type high frequency dynamic low voltage sensor as claimed in claim 8, it is characterized in that, this high frequency bandwidth amplifying circuit is made up of the two-stage amplifying circuit, first order amplifying circuit adopts amplifier AD620 and 5-10 doubly the enlargement ratio of unity gain bandwidth height to 1MHz, and second level amplifying circuit adopts amplifier OP37 and 10-40 doubly the enlargement ratio of unity gain bandwidth height to 30MHz.
10. as claim 1,2 or 3 described a kind of pressure resistance type high frequency dynamic low voltage sensors, it is characterized in that, this polishing Pyrex or GG-17 glass ring plate thickness are 2-4mm, this spun gold internal lead is φ 25-φ 40 μ m, and this pressure resistance type high frequency dynamic low voltage sensor has 138K-600KHz natural frequency, 0-40KHz to 0-200KHz bandwidth and 1.0-0.2 μ S rise time.
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| CNB2005100384587A CN100394154C (en) | 2005-03-14 | 2005-03-14 | Pressure resistance type high frequency dynamic low voltage sensor |
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| CNB2005100384587A CN100394154C (en) | 2005-03-14 | 2005-03-14 | Pressure resistance type high frequency dynamic low voltage sensor |
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| CN100394154C true CN100394154C (en) | 2008-06-11 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102072795B (en) * | 2009-11-20 | 2013-07-31 | 昆山双桥传感器测控技术有限公司 | Piezoresistive high-frequency high-temperature dynamic pressure sensor |
| CN102023066B (en) * | 2010-05-31 | 2012-07-18 | 昆山双桥传感器测控技术有限公司 | Universal pressure sensor of automobile |
| CN102359836A (en) * | 2011-08-09 | 2012-02-22 | 浙江双友物流器械股份有限公司 | Manufacturing methods of MEMS piezoresistive pull pressure chip and sensor |
| CN102944339A (en) * | 2012-10-22 | 2013-02-27 | 北京大学 | Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof |
| CN104296796B (en) * | 2014-09-16 | 2017-01-18 | 中国计量学院 | Pneumatic muscle radial collision sensing method and system |
| JP6517954B2 (en) * | 2018-01-04 | 2019-05-22 | 株式会社東芝 | Pressure sensor, microphone, ultrasonic sensor, blood pressure sensor and touch panel |
| CN110261013A (en) * | 2019-06-26 | 2019-09-20 | 青岛航天半导体研究所有限公司 | The pressure sensor and assemble method of output voltage signal |
| CN110542498A (en) * | 2019-09-06 | 2019-12-06 | 重庆大学 | MEMS strain differential pressure sensor and manufacturing method thereof |
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| CN1834602A (en) | 2006-09-20 |
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