CN110498387A - A kind of the MEMS pressure sensor preparation method and its sensor of two-way strain - Google Patents
A kind of the MEMS pressure sensor preparation method and its sensor of two-way strain Download PDFInfo
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- CN110498387A CN110498387A CN201910432828.7A CN201910432828A CN110498387A CN 110498387 A CN110498387 A CN 110498387A CN 201910432828 A CN201910432828 A CN 201910432828A CN 110498387 A CN110498387 A CN 110498387A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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Abstract
The invention belongs to pressure sensor technique fields, and in particular to a kind of the MEMS pressure sensor preparation method and its sensor of two-way strain, a kind of MEMS pressure sensor preparation method of two-way strain include the following steps as follows: S1, cleaning Si piece；The preparation of S2, Si substrate stem；S3, Si substrate, Si pressure receive the polishing of diaphragm and are thinned；S4, cavity is processed on Si substrate, receives to process cross recess on diaphragm in Si pressure；S5, hearth electrode preparation；S6, presser sensor film preparation: S7, top electrode preparation；S8, pressure sensor cavity sealing；S9, the encapsulation of pressure sensor shell.Pressure sensitive film setting is in covering cross recess central crossbar position, and when pressure, which receives diaphragm front, to be pressurized, diaphragm generates displacement and bends, and cross recess, which expands outwardly, makes pressure sensitive film that two-way strain occur, and can be improved pressure sensing sensitivity.
Description
Technical field
The invention belongs to pressure sensor technique fields, and in particular to a kind of MEMS pressure sensor preparation of two-way strain
Method and its sensor.
Background technique
Pressure is one of the important parameter in industrial production, in order to guarantee safe and efficient production, it is necessary to be carried out to pressure
Real-time monitoring and control.MEMS pressure sensor has small in size, light weight, at low cost, low in energy consumption, high reliablity, is suitable for criticizing
The advantages that quantization produces, is easily integrated and realizes intelligence.
Classify by working principle, MEMS pressure sensor can be divided into several classes such as pressure resistance type, piezoelectric type and condenser type.Pressure drag
Formula MEMS pressure sensor generally uses semiconductor as pressure sensitive film, and using Wheatstone bridge measurement sensitive membrane resistance value
Variation, and then realize pressure measurement.
The well-known MEMS pressure sensor production firm such as Kistler, Kulite mostly uses doping Si as pressure sensitive film,
And pressure sensor is prepared using SOI technology, such MEMS pressure sensor is the most common pressure sensor currently on the market.
But Si pressure sensitive film is degenerated under high temperature, leakage current increases and the limitation of the factors such as Si high-temerature creep, in addition, using silicone oil and
The pressure mediums such as gas encapsulate so that piezoresistive pressure sensor intrinsic frequency reduces, and drawbacks described above limits existing pressure resistance type pressure
Application of the force snesor in high temperature, high frequency dynamic pressure measurement field；Piezoelectric type MEMS pressure sensor is using piezoelectric quartz, pressure
The piezoelectric materials such as electroceramics realize pressure measurement based on piezoelectric effect as pressure sensitive film, external charge amplifier, such
Pressure sensor can be realized the pressure measurement of upper frequency, but its thermal adaptability is poor, and range is limited；Condenser type
MEMS pressure sensor generally uses SiC as pressure sensitive film, constitutes capacitance structure with absolute pressure chamber.Such pressure sensing utensil
Have the advantages that high sensitivity, dynamic response are fast, but thermal expansion caused by high temperature will lead to Pressure Sensor Precision reduction simultaneously, this
Outside, homoepitaxy doping process is that SiC introduces a large amount of damage and defect, leads to device seriously non-linear temperature drift, there are repetitions
The problems such as property is poor, sensitivity is low.
Therefore, developing based on new material, the high temperature of new construction, high frequency sound, wide range pressure sensor and preparation process is
The main trend and urgent problem to be solved of pressure sensing field development at present.
Summary of the invention
In view of the above technical problems, the present invention provides a kind of MEMS pressure sensor preparation method of two-way strain and its
The high temperature resistance of sensor can be improved in sensor, has the characteristics that highly sensitive and high frequency sound.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of MEMS pressure sensor preparation method of two-way strain, includes the following steps as follows:
S1, cleaning Si piece；
The preparation of S2, Si substrate stem；
S3, Si substrate, Si pressure receive the polishing of diaphragm and are thinned；
S4, cavity is processed on Si substrate, receives to process cross recess on diaphragm in Si pressure；
S5, hearth electrode preparation；
S6, presser sensor film preparation:
S7, top electrode preparation；
S8, pressure sensor cavity sealing；
S9, the encapsulation of pressure sensor shell.
In the S2: lead column preparation method using Si through-hole technology prepare, preparation method successively include be lithographically formed it is logical
Hole exposure mask, deep reactive ion gas etching form lead blind hole, dry oxidation forms SiO2 passivation layer, sputtering method forms Cu seed
Layer, galvanoplastic filling through-hole form Cu stem.
In the S4: using reactive ion gas etching or wet etching processing cavity and cross recess.
In the S5: the preparation method of hearth electrode uses magnetron sputtering, vapor deposition and ion plating, and hearth electrode material uses gold,
Passivation insulation first is formed in the surface Si dry oxidation before preparing hearth electrode.
In the S6: boron nitride/graphene heterojunction structure presser sensor that boron nitride does substrate may be selected in pressure sensitive film
Film or SiC do the SiC/ graphene pressure sensitive film of substrate, and wherein boron nitride/graphene heterojunction structure pressure sensitive film is using wet
The method preparation of method transfer successively includes that boron nitride wet process shifts, the transfer of graphene wet process.
In the S7: preparing top electrode using magnetron sputtering, vapor deposition or the method for ion plating, make graphene pressure sensitive film
Edge hearth electrode and top electrode be anchored, cross recess infall is covered by graphene pressure sensitive film.
A kind of MEMS pressure sensor of two-way strain, including package casing, substrate chamber and pressure sensitive film, the substrate
Chamber and pressure sensitive film are successively set in package casing from top to bottom, and pressure sensitive film is equipped with pressure and receives diaphragm, are passed through
Pressure receives diaphragm and pressure sensitive film is sealed in package casing, from environmental pollution and interference；The pressure sensitive film two
End is connected respectively membrane electrode, is closed the cavity of substrate chamber by two membrane electrodes and pressure sensitive film, each thin-film electro
Pole is connected separately with stem.
The pressure receives the diaphragm one side opposite with pressure sensitive film equipped with cross recess, and pressure receives diaphragm front
When compression, cross recess, which expands outwardly, makes pressure sensitive film generate two-way strain, increases pressure sensing sensitivity.
The pressure sensitive film uses graphene pressure sensitive film.
The interior side length of substrate chamber is set as 500mm ~ 1000mm, pressure receive diaphragm with a thickness of 80mm ~ 120mm, cross
The length of groove is 400mm ~ 800mm, and the width and depth of cross recess are respectively 40mm ~ 60mm and 50mm ~ 70mm, make pressure
The intrinsic frequency of sensor maintains 1MHz or more.
The package casing bottom is equipped with base of ceramic.
Compared with prior art, the present invention having the beneficial effect that
MEMS pressure sensor of the present invention, which receives the design of the diaphragm back side in its pressure, cross recess structure, pressure sensitive film
Setting is in covering cross recess central crossbar position, and when pressure, which receives diaphragm front, to be pressurized, diaphragm generates displacement and occurs curved
Song, cross recess, which expands outwardly, strains pressure sensitive film, and sensitive membrane strain is two-way strain, can be improved pressure
Sensing sensitivity；
The pressure sensitive film of MEMS pressure sensor of the present invention use graphene Novel Carbon Nanomaterials, graphene have compared with
High fusing point, biggish tensile strength, strain --- resistive linearity response, therefore, MEMS pressure sensing of the present invention
Device has many advantages, such as that high temperature resistant, wide range and linear property are good；
The pressure of MEMS pressure sensor of the present invention receives diaphragm and substrate uses Si material, constructs on Si substrate rectangular
Cavity, and realize that pressure receives diaphragm and Si chamber bonded seal using Si through-hole technology (TSV).The pressure sensor is single-chamber knot
Structure, the higher sensor of intrinsic frequency can be designed by receiving diaphragm thickness according to suitable cavity size and pressure, and be pressed
Power sensitive membrane be encapsulated in it is intracavitary, from environmental pollution and interference；
The resistance change of pressure sensitive film caused by the pressure of MEMS pressure sensor of the present invention, using Wheatstone bridge
It measures, Wheatstone bridge is capable of the resistance value of real-time, highly sensitive and high-precision measurement pressure sensitive film, ensure that MEMS is pressed
The reproducibility and reliability of power sensing.
Detailed description of the invention
Fig. 1 is the integrally-built schematic diagram of the present invention；
Fig. 2 is the structural schematic diagram that pressure of the present invention receives diaphragm；
Fig. 3 is the axonometric drawing that pressure of the present invention receives diaphragm；
Fig. 4 is that pressure of the present invention receives diaphragm deformation schematic diagram；
Fig. 5 is the schematic diagram of the section structure of pressure sensor of the present invention；
Wherein: 1 receives diaphragm for pressure, and 2 be the first film electrode, and 3 be sealant, and 4 be the first welded disc, and 5 be substrate chamber, and 6
For first lead column, 7 be package casing, and 8 be pedestal, and 9 be cable covering, and 10 be pressure sensitive film, and 11 be the second stem, 12
It is detection circuit for the second welded disc, 13,14 be the second membrane electrode.
Specific embodiment
The following is a clear and complete description of the technical scheme in the embodiments of the invention, it is clear that described embodiment
Only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
Art personnel every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
As shown in Fig. 1 to 5, a kind of MEMS pressure sensor of two-way strain, including package casing 7, substrate chamber 5, pressure
Sensitive membrane 10 and pressure receive diaphragm 1, and substrate chamber 5, pressure sensitive film 10 and pressure receive diaphragm 1 and is successively set on from top to bottom
In package casing 7,10 both ends of pressure sensitive film are connected respectively membrane electrode, will by two membrane electrodes and pressure sensitive film 10
The cavity of substrate chamber 5 is closed, and each membrane electrode is connected separately with stem.
Specifically, two membrane electrodes are respectively designated as the first film electrode 2 and the second membrane electrode for ease of description
14；Stem is respectively first lead column 6 and the second stem 11.One end of first lead column 6 passes through the first welded disc 4 and the
One end of the connection of one membrane electrode 2, the second stem 11 is coupled by the second welded disc 12 with the second membrane electrode 14.
It, can in order to improve sealing performance when being closed the cavity of substrate chamber 5 by two membrane electrodes and pressure sensitive film 10
To fill corresponding sealant 3 or be realized by setting sealing ring.
Stem can direct connecting conducting wire be equipped with cable covering in 7 bottom of package casing but in order to play fixed function
9, conducting wire passes through the cable covering 9, and cable covering 9 is equipped with corresponding through-hole.
Further, pressure receive diaphragm 1 its back side design have cross recess structure.When pressure sensor application is in pressure
When measurement, the pressure that testing pressure acts on pressure sensor receives diaphragm 1.
As shown in Fig. 2, diaphragm generates the displacement of pressure direction and bends when pressure receives diaphragm front and is pressurized,
Cross recess expands outwardly simultaneously；As shown in figure 3, graphene pressure sensitive film 10(passes through membrane electrode (2,14) fixed support
Above cross recess intersection, cross recess crossover location is covered.Under pressure, cross recess, which expands outwardly, makes graphene
Pressure sensitive film 10 generates the two-way strain on the direction x and y, and becomes the resistance value of graphene pressure sensitive film 10
Change, principle can be described as
Wherein, the strain on the direction x and y is used and is indicated respectively, and to respectively indicate 10 carrier of graphene pressure sensitive film dense
Degree and carrier mobility, the two electrical parameters all change with the strain of graphene pressure sensitive film 10.L and W is stone
The conductive lengths and width of black alkene pressure sensitive film 10.By formula (1), it can be seen that the strain that graphene pressure sensitive film 10 generates
Bigger, the change in resistance of resistance is bigger.Diaphragm 1 is received for the cross recess structural pressure, when be under pressure act on when, stone
The two-way strain that black alkene pressure sensitive film 10 generates is at least times of conventional uniaxial pressure strain transducer, and pressure sensitive film
10 be encapsulated in it is intracavitary, from environmental pollution and interference.Pressure sensor of the present invention is single cavity structure, according to suitable cavity ruler
Very little and pressure receives diaphragm thickness, and can to design intrinsic frequency higher, and response is comparatively fast and with higher sensitivity pressure sensor.
Pressure signal in order to detect pressure sensor is changed into the electrical signal that can be read and show, uses
Wheatstone bridge measures.Detection circuit 13 includes power supply, two ratio arm resistance (R2, R3), a build-out resistor R1.According to
According to pressure sensor shown in FIG. 1 and test philosophy structural schematic diagram, by an arm of pressure sensor access Wheatstone bridge
In, the resistance value of entire pressure sensor is, two ratio arm resistance respectively and, a build-out resistor, and set pressure sensor
Supply voltage be.
After pressure sensor processing and fabricating is good, measuring circuit is accessed.Firstly, in the case where the effect of no pressure, adjusting
Resistance value with resistance completes the zeroing operation of pressure sensor so that the output voltage of sensor is 0；Secondly, in known pressure
The calibration of pressure value and output voltage relationship is carried out under size cases to pressure sensor, and further determines that pressure sensor
The parameter calibrations such as sensitivity, the linearity and measurement range；The high temperature resistant of pressure sensor, reliability and sluggishness etc. are completed again
Characteristic test.
Further, graphene pressure sensitive film 10 can be used boron nitride/graphene heterojunction structure or SiC/ graphene film
Piece.
Further, graphene pressure-sensitive diaphragm is by membrane electrode (2,14) anchoring support on slot cross recess infall
Side.
Further, 7 bottom of package casing is equipped with base of ceramic 8.
The pressure sensor is single cavity structure, and pressure sensitive film 10 be encapsulated in it is intracavitary, from environmental pollution and dry
It disturbs.The interior side length of substrate chamber 5 is set as 500mm ~ 1000mm, pressure receive diaphragm 1 with a thickness of 80mm ~ 120mm, cross recess
Length be 400mm ~ 800mm, the width and depth of cross recess are respectively 40mm ~ 60mm and 50mm ~ 70mm.
Embodiment one, the side length of substrate chamber 5 are set as 500mm, pressure receive diaphragm 1 with a thickness of 80mm, cross recess
Length be 400mm, the width and depth of cross recess are about 40mm and 50mm, maintain the intrinsic frequency of pressure sensor
1MHz or more.
Embodiment two, the side length of substrate chamber 5 are set as 800mm, pressure receive diaphragm 1 with a thickness of 100mm, cross recess
Length be 650mm, the width and depth of cross recess are about 50mm and 60mm.
Embodiment three, the side length of substrate chamber 5 are set as 1000mm, pressure receive diaphragm 1 with a thickness of 120mm, cross is recessed
The length of slot is 800mm, and the width and depth of cross recess are about 60mm and 70mm.
A kind of MEMS pressure sensor preparation method of two-way strain, includes the following steps as follows:
S1, cleaning Si piece；
The preparation of S2, Si substrate stem；
S3, Si substrate, Si pressure receive the polishing of diaphragm and are thinned；
S4, cavity is processed on Si substrate, receives to process cross recess on diaphragm in Si pressure；
S5, hearth electrode preparation；
S6, presser sensor film preparation:
S7, top electrode preparation；
S8, pressure sensor cavity sealing；
S9, the encapsulation of pressure sensor shell.
Pressure, which receives diaphragm design, cross recess structure, and when pressure, which receives diaphragm front, to be pressurized, diaphragm generates pressure
The displacement in direction and bend, while cross recess expands outwardly graphene presser sensor diaphragm is made to generate two-way strain, energy
Enough improve pressure sensing sensitivity.
Further, Si piece is cleaned using improvement RCA method；
Further, on Si substrate prepared by stem: lead column preparation method is prepared using Si through-hole technology (TSV), preparation method
It successively include being lithographically formed vias masks, deep reactive ion gas etching formation lead blind hole, dry oxidation to form SiO2 passivation
Layer, sputtering method form Cu seed layer, galvanoplastic filling through-hole forms Cu stem；
Further, Si substrate, Si pressure receive the polishing of diaphragm and are thinned: polishing and thinned method is common chemical machinery
The thickness of (CMP) method of polishing, control Si substrate is about 500mm, and it is about 100um that control Si pressure, which receives the thickness of diaphragm,；
Further, Si substrate chamber, Si pressure receive cross recess preparation on diaphragm: substrate chamber and cross recess preparation method use
Reactive ion gas etching or wet etching, preparation method successively include photo etched mask, etch substrate side's chamber and cross recess.
In order to guarantee that pressure sensor has biggish intrinsic frequency, and be able to respond the pressure measurement of upper frequency, substrate chamber 5 it is interior
Side length is set as 500mm ~ 1000mm, pressure receive diaphragm 1 with a thickness of 80mm ~ 120mm, the length of cross recess be 400mm ~
800mm, the width and depth of cross recess are respectively 40mm ~ 60mm and 50mm ~ 70mm.
Further, prepared by hearth electrode: the methods of magnetron sputtering, vapor deposition and ion plating can be used in the preparation method of hearth electrode,
Hearth electrode material first forms passivation insulation in the surface Si dry oxidation before preparing hearth electrode using gold；
Further, graphene presser sensor film preparation: boron nitride/graphene that the optional boron nitride of pressure sensitive film does substrate is different
Matter structural pressure sensitive membrane or SiC do the SiC/ graphene pressure sensitive film of substrate, wherein boron nitride/graphene heterojunction structure pressure
Power sensitive membrane successively includes that boron nitride wet process shifts using the method preparation of wet process transfer, the transfer of graphene wet process.Wherein SiC/
Graphene pressure sensitive film grows graphene using SiC epitaxy；It is recessed that the graphene pressure sensitive film prepared is supported on cross
Slot intersects top；
Further, prepared by top electrode: preparing top electrode using magnetron sputtering, vapor deposition or the method for ion plating, makes graphene pressure
The edge hearth electrode and top electrode of sensitive membrane are anchored, and cross recess infall is covered by graphene pressure sensitive film；
Further, pressure sensor cavity seals: pressure sensor cavity sealing successively includes connecing in electrode film and stem
It is coated with tin thin film on touching solder joint, and bonds together to form gold/tin/copper interconnection conducting；To being filled with He or N2 in pressure sensor cavity
Equal inert gases will enclose standard atmospheric pressure using electric insulating sealant in pressure sensor cavity；
Further, pressure sensor shell encapsulates: shell layered water flood well successively includes that pressure sensor chip is split from Si wafer
Piece is transferred on base of ceramic, encapsulating housing, welding signal output lead.
Only presently preferred embodiments of the present invention is explained in detail above, but the present invention is not limited to above-described embodiment,
Within the knowledge of a person skilled in the art, it can also make without departing from the purpose of the present invention each
Kind variation, various change should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of MEMS pressure sensor preparation method of two-way strain, which is characterized in that include the following steps as follows:
S1, cleaning Si piece；
The preparation of S2, Si substrate stem；
S3, Si substrate, Si pressure receive the polishing of diaphragm and are thinned；
S4, cavity is processed on Si substrate, receives to process cross recess on diaphragm in Si pressure；
S5, hearth electrode preparation；
S6, presser sensor film preparation:
S7, top electrode preparation；
S8, pressure sensor cavity sealing；
S9, the encapsulation of pressure sensor shell.
2. a kind of MEMS pressure sensor preparation method of two-way strain according to claim 1, which is characterized in that described
In S2: lead column preparation method is prepared using Si through-hole technology, and preparation method successively includes being lithographically formed vias masks, deep reaction
Ionized gas etches and to form lead blind hole, dry oxidation forms SiO2 passivation layer, sputtering method forms Cu seed layer, galvanoplastic filling
Through-hole forms Cu stem.
3. a kind of MEMS pressure sensor preparation method of two-way strain according to claim 1, which is characterized in that described
In S4: using reactive ion gas etching or wet etching processing cavity and cross recess.
4. a kind of MEMS pressure sensor preparation method of two-way strain according to claim 1, which is characterized in that described
In S5: the preparation method of hearth electrode uses magnetron sputtering, vapor deposition and ion plating, and hearth electrode material is preparing hearth electrode using gold
Preceding elder generation forms passivation insulation in the surface Si dry oxidation.
5. a kind of MEMS pressure sensor preparation method of two-way strain according to claim 1, which is characterized in that described
In S6: the optional boron nitride of pressure sensitive film does boron nitride/graphene heterojunction structure pressure sensitive film of substrate or SiC does substrate
SiC/ graphene pressure sensitive film, wherein boron nitride/graphene heterojunction structure pressure sensitive film use wet process transfer method
Preparation.
6. a kind of MEMS pressure sensor preparation method of two-way strain according to claim 5, which is characterized in that described
In S7: preparing top electrode using magnetron sputtering, vapor deposition or the method for ion plating, make the edge hearth electrode of graphene pressure sensitive film
It is anchored with top electrode, cross recess infall is covered by graphene pressure sensitive film.
7. a kind of MEMS pressure sensor of two-way strain, it is characterised in that: including package casing (7), substrate chamber (5) and pressure
Sensitive membrane (10), the substrate chamber (5) and pressure sensitive film (10) are successively set on from top to bottom in package casing (7), pressure
Sensitive membrane (10) is equipped with pressure and receives diaphragm (1), receives diaphragm (1) by pressure and pressure sensitive film (10) is sealed in encapsulation
In shell (7), from environmental pollution and interference；Pressure sensitive film (10) both ends are connected respectively membrane electrode, pass through two
Membrane electrode and pressure sensitive film (10) close the cavity of substrate chamber (5), and each membrane electrode is connected separately with stem.
8. a kind of MEMS pressure sensor of two-way strain according to claim 7, it is characterised in that: the pressure receives
Diaphragm (1) and pressure sensitive film (10) opposite one side are equipped with cross recess, when pressure receives the compression of diaphragm (1) front, ten
Word groove, which expands outwardly, makes pressure sensitive film (10) to generate two-way strain, increases pressure sensing sensitivity.
9. a kind of MEMS pressure sensor of two-way strain according to claim 7, it is characterised in that: substrate chamber (5)
Interior side length is set as 500mm ~ 1000mm, pressure receive diaphragm (1) with a thickness of 80mm ~ 120mm, the length of cross recess is
400mm ~ 800mm, the width and depth of cross recess are respectively 40mm ~ 60mm and 50mm ~ 70mm, make the intrinsic of pressure sensor
Frequency maintains 1MHz or more.
10. a kind of MEMS pressure sensor of two-way strain according to claim 7, it is characterised in that: the pressure is quick
Feel film and uses graphene pressure sensitive film.
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Cited By (2)
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| CN111025381A (en) * | 2019-12-26 | 2020-04-17 | 吉林大学 | Piezoresistive geophone based on graphene |
| CN115714954A (en) * | 2022-12-28 | 2023-02-24 | 绍兴中芯集成电路制造股份有限公司 | MEMS device and manufacturing method thereof |
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| CN107941385A (en) * | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN108529553A (en) * | 2017-09-22 | 2018-09-14 | 中北大学 | A kind of graphene high-temp pressure sensor packaging method |
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| CN111025381A (en) * | 2019-12-26 | 2020-04-17 | 吉林大学 | Piezoresistive geophone based on graphene |
| CN111025381B (en) * | 2019-12-26 | 2022-02-22 | 吉林大学 | Piezoresistive geophone based on graphene |
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