CN113483941A - Leadless packaging dynamic pressure sensor integrated with ASIC chip - Google Patents
Leadless packaging dynamic pressure sensor integrated with ASIC chip Download PDFInfo
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- CN113483941A CN113483941A CN202110728414.6A CN202110728414A CN113483941A CN 113483941 A CN113483941 A CN 113483941A CN 202110728414 A CN202110728414 A CN 202110728414A CN 113483941 A CN113483941 A CN 113483941A
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- 238000004806 packaging method and process Methods 0.000 title abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 101
- 238000005245 sintering Methods 0.000 claims abstract description 39
- 229910000833 kovar Inorganic materials 0.000 claims abstract description 30
- 239000002002 slurry Substances 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000000523 sample Substances 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 238000007789 sealing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000009530 blood pressure measurement Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a leadless packaging dynamic pressure sensor of an integrated ASIC chip, which comprises first bonding glass and second bonding glass, wherein the first bonding glass is fixedly sealed with the front side of an SOI pressure-sensitive chip, the second bonding glass is fixedly sealed with the front side of the ASIC chip, the bottom ends of the first bonding glass and the second bonding glass are respectively fixedly sintered with a glass sintering seat, two groups of Kovar pins on the glass sintering seat are respectively penetrated into lead connecting holes on the first bonding glass and the second bonding glass, slurry or glass silver powder is filled into the lead connecting holes to realize the electrical connection between the Kovar pins and a chip electrode through sintering, and a ceramic circuit board for realizing the electrical connection between the SOI pressure-sensitive chip and the ASIC chip is welded on the glass sintering seat through the Kovar pins. The invention encapsulates the ASIC chip with the signal processing function and the SOI pressure-sensitive chip at the most front end of the probe through the leadless wire, thereby solving the problems of poor temperature tolerance and low frequency response of the conventional encapsulation.
Description
Technical Field
The invention belongs to the technical field of pressure sensors, and particularly relates to a leadless packaging dynamic pressure sensor integrated with an ASIC chip.
Background
In the fields of petroleum, chemical engineering, aircrafts, engines, wind tunnels, blasting, hydraulic pressure and the like, the pressure measurement mainly has the following requirements: 1. the dynamic performance requirement is high; 2. the medium compatibility is good, and the medium can stably work for a long time in various gas and liquid media with strong corrosivity and conductivity; 3. the working temperature is high.
The lead wire mode between the chip electrode of the conventional pressure sensor and the sintering lead pin usually adopts the processes of gold wire ball bonding, pressure welding and the like, as shown in figure 2 in the attached drawing of the specification, because a sensitive chip and the lead wire are exposed, the medium compatibility is poor, the reliability is low, silicon oil is required to be filled for protection, the isolation is carried out through a corrugated diaphragm, the dynamic performance is obviously reduced because the pressure is required to be transmitted to an MEMS chip through the silicon oil in the packaging, the requirement of high-frequency dynamic pressure measurement cannot be met, and the defects of poor temperature resistance, large temperature drift, large volume and the like exist.
In order to overcome the defects of conventional sensor packaging, patent 202110208676.X provides a leadless packaging pressure sensor structure, the back surface of a chip is contacted with a measured medium, a front metal electrode is connected with an outer lead by adopting a conductive paste sintering method, and a glass base and a tube seat are sintered together to form a sealing structure.
At present, the leadless packaging scheme in the leadless packaging pressure sensor structure only realizes leadless packaging of a sensor probe, only outputs the original mV signal of a wheatstone bridge which is not amplified, calibrated and the like, and if a standard signal is required to be output to an acquisition system, the rear end also needs a signal processing box, namely, a split structure, the probe and the signal processing box are separated and are connected through a cable, and the mode has the following defects: 1. the system is complex, large in volume and poor in reliability; 2. the original signal is a weak mV signal, and is easy to attenuate and poor in anti-interference capability through cable transmission; 3. the calibration is complex, and the influence of the length of the dead cable on the precision is large; 4. due to the adoption of a split structure, the temperature of the signal processing end is inconsistent with the temperature of the sensor end, so that the temperature compensation precision is poor.
We therefore propose a leadless packaged dynamic pressure sensing integrated with an ASIC chip to solve the above problems.
Disclosure of Invention
It is an object of the present invention to provide a leadless packaged dynamic pressure sensor integrated with an ASIC chip to solve the problems set forth in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a leadless packaged dynamic pressure sensor of an integrated ASIC chip comprises a first bonding glass and a second bonding glass, the first bonding glass and the second bonding glass are respectively provided with a lead connecting hole and a reference pressure cavity, the first bonding glass and the front surface of the SOI pressure-sensitive chip are fixed in a sealing way through electrostatic bonding, the second bonding glass and the front surface of the ASIC chip are fixed in a sealing way through electrostatic bonding, the bottom ends of the first bonding glass and the second bonding glass are respectively sintered and fixed with the glass sintering seat, two groups of Kovar pins are respectively arranged on the glass sintering seat, the two groups of Kovar pins respectively penetrate into the lead connecting holes on the first bonding glass and the second bonding glass, the electrical connection between the Kovar pin and the chip electrode is realized by filling slurry into the lead connecting hole and sintering, and a ceramic circuit board for realizing the electrical connection between the SOI pressure-sensitive chip and the ASIC chip is also welded on the glass sintering seat through a kovar needle.
Preferably, the back surfaces of the SOI pressure-sensitive chip and the ASIC chip are both contacted with a measured medium, and the front surfaces of the SOI pressure-sensitive chip and the ASIC chip are both connected with a Kovar pin through sintered silver powder glass.
Preferably, a protective cover is fixedly arranged above the glass sintering seat, and the first bonding glass, the second bonding glass, the SOI pressure sensitive chip and the ASIC chip are all arranged in an accommodating cavity between the glass sintering seat and the protective cover.
Preferably, a piezoresistor is further arranged on the SOI piezochip.
Preferably, the lead connecting holes are arranged in a rectangular shape, the Kovar pins are four, the lead connecting holes are four in one-to-one correspondence with the Kovar pins, and the slurry filled in the lead connecting holes is conductive slurry.
Preferably, the protective cover is provided with a through hole for transmitting the outside temperature to the accommodating cavity.
The invention has the technical effects and advantages that: the leadless packaging structure of the integrated ASIC chip is adopted, the ASIC chip with the signal processing function and the SOI pressure-sensitive chip are packaged at the forefront end of the probe together in a leadless packaging mode, a pressure sensitive structure is designed on the basis of an SOI wafer material, the high-temperature stability of the sensor is improved, the problems of poor temperature resistance and low frequency response of conventional packaging are solved, the defects of complex system, large volume, low reliability, poor precision and the like of a split type leadless packaging scheme are overcome, on-site acquisition and on-site processing of Wheatstone bridge signals are realized, in-situ sensing and in-situ processing are realized, the reliability of the sensor is fully improved, and meanwhile, the overall size of the sensor is further reduced and the temperature drift error is reduced.
The leadless packaging pressure sensor has the advantages of good high-temperature characteristic, wide use temperature range and good high-temperature performance, can meet the pressure measurement requirement in a high-temperature environment after temperature compensation and a high-temperature signal processing circuit are carried out, the pressure sensitive chip is manufactured by utilizing the piezoresistive effect principle of monocrystalline silicon, and adopts silicon-on-insulator (SOI) materials to cancel pn junctions between sensitive resistors, thereby effectively reducing electric leakage, improving the stability of the sensor and the use temperature of the sensor.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic structural diagram of a conventional pressure sensor with exposed sensitive chips and leads, which is mentioned in the background of the invention.
In the figure: 1. an SOI pressure sensitive chip; 2. a voltage dependent resistor; 3. an ASIC chip; 4. a first bonding glass; 5. a second bonding glass; 6. a protective cover; 7. sintering silver powder glass; 8. a glass sintering seat; 9. a ceramic circuit board; 10. a kovar needle; 11. a chip electrode;
a. a sensitive chip; b. sealing and sintering; c. a binding post; d. an oil-filled region; e. a gold wire lead; f. pressing a ring; h. a corrugated diaphragm; i. a metal core.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a leadless packaging dynamic pressure sensor of an integrated ASIC chip as shown in figure 1, which comprises a first bonding glass 4 and a second bonding glass 5, wherein a lead connecting hole and a reference pressure cavity are respectively arranged on the first bonding glass 4 and the second bonding glass 5, the first bonding glass 4 and the front surface of an SOI pressure-sensitive chip 1 are sealed and fixed through electrostatic bonding, the second bonding glass 5 and the front surface of the ASIC chip are sealed and fixed through electrostatic bonding, a piezoresistor 2 is arranged on the SOI pressure-sensitive chip 1, the bottom ends of the first bonding glass 4 and the second bonding glass 5 are respectively sintered and fixed with a glass sintering seat 8, two groups of Kovar pins 10 are respectively arranged on the glass sintering seat 8, the two groups of Kovar pins 10 respectively penetrate into lead connecting holes on the first bonding glass 4 and the second bonding glass 5, and paste or glass silver powder is filled into the lead connecting holes to realize the Kovar pins 10 and a chip electrode 11 through sintering The glass sintering seat 8 is also welded with a ceramic circuit board 9 for realizing the electrical connection of the SOI pressure-sensitive chip 1 and the ASIC chip 3 through a Kovar needle 10;
the back of the SOI pressure sensitive chip 1 and the back of the ASIC chip 3 are both contacted with a measured medium, the front of the SOI pressure sensitive chip 1 and the front of the ASIC chip 3 are both connected with kovar pins 10 through sintered silver powder glass 7, a protective cover 6 is fixedly arranged above a glass sintering seat 8, first bonding glass 4, second bonding glass 5, the SOI pressure sensitive chip 1 and the ASIC chip 3 are all arranged in an accommodating cavity between the glass sintering seat 8 and the protective cover 6, lead connecting holes are arranged in a rectangular shape, the kovar pins 10 are four, the lead connecting holes are provided with four kovar pins 10 which are matched with the four kovar pins 10 in a one-to-one correspondence manner, slurry filled in the lead connecting holes is conductive slurry, and the protective cover 6 is provided with a through hole which transmits the external temperature to the accommodating cavity.
The sealing process of the leadless packaging dynamic pressure sensor of the integrated ASIC chip comprises the following steps: firstly, a lead connecting hole and a reference pressure cavity structure are manufactured by bonding glass 1 and bonding glass 2 through a micromachining method, then the front surface of an SOI pressure-sensitive chip and the bonding glass 1 are sealed together through an electrostatic bonding method, the front surface of an ASIC chip and the bonding glass 2 are sealed together through an electrostatic bonding method, the sealed pressure-sensitive chip and the ASIC chip are hermetically connected with a glass sintering seat through a glass sintering method, meanwhile, a Kovar pin on the glass sintering seat penetrates through lead holes of the bonding glass 1 and the bonding glass 2 and is connected with an electrode on the chip through a metal-glass sintering method, and meanwhile, a ceramic circuit board is welded on the sintering seat through the Kovar pin, so that the electrical connection of the pressure-sensitive chip and the ASIC chip is realized.
In the leadless packaging dynamic pressure sensor of the integrated ASIC chip, the SOI pressure-sensitive chip 1 adopts MEMS processing technology, a pressure-sensitive structure is designed on the basis of SOI wafer material, the high-temperature stability of the sensor is improved, the excellent performance of the SOI material is utilized, a silicon dioxide film layer is used for isolating a piezoresistor strip and a substrate, the drifting problem caused by leakage current is fundamentally solved, and the process flow of the SOI pressure-sensitive chip 1 mainly comprises doping, photoetching, ICP etching, film coating, scribing and the like;
the ASIC chip 3 adopts a conventional pressure sensor signal conditioning chip, is a high-precision digital-to-analog converter mainly designed for a differential resistance bridge sensor signal, is provided with a digital signal processing circuit, can carry out digital compensation on the measurement result of the sensor, and comprises the first-order or second-order compensation on the offset, sensitivity, temperature drift and nonlinearity of the signal, and the coefficient of a compensation algorithm can be written into an on-chip memory through a bus interface and provides a digital or analog measurement output signal through the bus interface;
in the invention, the back surfaces of an SOI pressure-sensitive chip 1 and an ASIC chip 3 are contacted with a medium to be detected, a metal electrode on the front surface is connected with a Kovar needle 10 by adopting a metal-glass slurry sintering method, simultaneously, glass and a shell are also sintered together to form a sealing structure, the electrical connection between the chip electrode and an external pin is realized, a leadless packaging structure is formed, during the sintering process of the glass and the metal shell, a low-temperature melting glass material with an expansion coefficient close to that of a material to be sintered is selected and made into a prefabricated sheet or slurry, the prefabricated sheet or the slurry is added between the surfaces to be welded or coated on the surface to be welded, and the prefabricated sheet or the slurry is aligned and clamped and sintered by a clamp;
designing and preparing a corresponding photoetching plate diagram according to the position of a metal bonding pad of an SOI pressure-sensitive chip 1, a specific resistor strip and a connecting wire diagram, precisely manufacturing round holes or square grooves on the surfaces of first bonding glass 4 and second bonding glass 5 through an etching technology and a corrosion process on the basis of planar bonding glass for limiting the deformation of a diaphragm, processing cone center through holes on the bonding glass by utilizing laser, cleaning and drying the bonding glass and the SOI pressure-sensitive chip 1, precisely aligning the bonding glass and the SOI pressure-sensitive chip 1 through a photoetching machine, and then carrying out electrostatic sealing by using a bonding machine, wherein the resistor part of the SOI pressure-sensitive chip subjected to electrostatic sealing is positioned in the vacuum square groove, and the metal bonding pads of the SOI pressure-sensitive chip 1 and the ASIC chip 3 are in one-to-one correspondence with the cone through holes;
the sintering of the Kovar pin 10 and the chip electrode 11 adopts metal-glass ingredients, and the ingredients comprise metal powder (including but not limited to silver powder, tin powder and the like), glass powder, organic binder, solvent and the like. Before sintering, putting glass ingredients into a lead hole of a glass base, placing the lead hole in a clamp for presintering, removing a solvent, volatilizing an organic binder, melting glass at a temperature of over 300 ℃, assembling the glass ingredients with a tube seat by using a special clamp, and sintering the glass ingredients in a Kovar pin inserting hole of a glass sintering seat;
the leadless packaging dynamic pressure sensor of the integrated ASIC chip adopts a leadless packaging structure of the integrated ASIC chip, the ASIC chip with a signal processing function and the SOI pressure sensitive chip are packaged at the foremost end of the probe together in a leadless packaging mode, on one hand, the problems of poor temperature tolerance and low frequency response of conventional packaging are solved, on the other hand, the defects of complex system, large volume, low reliability, poor precision and the like of a split type leadless packaging scheme are solved, on-site acquisition and on-site processing of Wheatstone bridge signals are realized, in-situ sensing and in-situ processing are realized, the reliability of the sensor is fully improved, and meanwhile, the overall volume of the sensor is further reduced, and the temperature drift error is reduced.
The leadless packaging pressure sensor has the advantages of good high-temperature characteristic, wide use temperature range and good high-temperature performance, can meet the pressure measurement requirement in a high-temperature environment after temperature compensation and a high-temperature signal processing circuit are carried out, the pressure sensitive chip is manufactured by utilizing the piezoresistive effect principle of monocrystalline silicon, and adopts silicon-on-insulator (SOI) materials to cancel pn junctions between sensitive resistors, thereby effectively reducing electric leakage, improving the stability of the sensor and the use temperature of the sensor.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (6)
1. A leadless packaged dynamic pressure sensor of an integrated ASIC chip comprising a first bond glass (4) and a second bond glass (5), characterized in that: the SOI pressure-sensitive chip is characterized in that a lead connecting hole and a reference pressure cavity are respectively formed in the first bonding glass (4) and the second bonding glass (5), the first bonding glass (4) and the front surface of the SOI pressure-sensitive chip (1) are sealed and fixed through electrostatic bonding, the second bonding glass (5) and the front surface of the ASIC chip are sealed and fixed through electrostatic bonding, the bottom ends of the first bonding glass (4) and the second bonding glass (5) are respectively sintered and fixed with a glass sintering seat (8), two groups of Kovar pins (10) are respectively arranged on the glass sintering seat (8), the two groups of Kovar pins (10) respectively penetrate into the lead connecting holes in the first bonding glass (4) and the second bonding glass (5), slurry is filled into the lead connecting holes to realize the electrical connection between the Kovar pins (10) and the chip electrode (11) through sintering, and the SOI pressure-sensitive chip (1) and the ASIC chip (1) are further welded on the glass sintering seat (8) through the Kovar pins (10) 3) An electrically connected ceramic circuit board (9).
2. The leadless packaged dynamic pressure sensor of integrated ASIC chip of claim 1, wherein: the back surfaces of the SOI pressure sensitive chip (1) and the ASIC chip (3) are both contacted with a measured medium, and the front surfaces of the SOI pressure sensitive chip (1) and the ASIC chip (3) are both connected with a Kovar pin (10) through sintered silver powder glass (7).
3. The leadless packaged dynamic pressure sensor of integrated ASIC chip of claim 1, wherein: the glass sintering seat is characterized in that a protective cover (6) is fixedly arranged above the glass sintering seat (8), and the first bonding glass (4), the second bonding glass (5), the SOI pressure-sensitive chip (1) and the ASIC chip (3) are arranged in an accommodating cavity between the glass sintering seat (8) and the protective cover (6).
4. The leadless packaged dynamic pressure sensor of integrated ASIC chip of claim 1, wherein: and the SOI pressure-sensitive chip (1) is also provided with a pressure-sensitive resistor (2).
5. The leadless packaged dynamic pressure sensor of integrated ASIC chip of claim 1, wherein: the lead connecting holes are arranged in a rectangular shape, the Kovar pins (10) are four, the lead connecting holes are also correspondingly provided with four, and the slurry filled in the lead connecting holes is conductive slurry.
6. The leadless packaged dynamic pressure sensor of integrated ASIC chip of claim 3, wherein: the protective cover (6) is provided with a through hole for transmitting the outside temperature to the accommodating cavity.
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| CN202110728414.6A CN113483941A (en) | 2021-06-29 | 2021-06-29 | Leadless packaging dynamic pressure sensor integrated with ASIC chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113916415A (en) * | 2021-10-27 | 2022-01-11 | 罕王微电子（辽宁）有限公司 | Anode pressure sensor structure |
| CN117053959A (en) * | 2023-10-11 | 2023-11-14 | 广东润宇传感器股份有限公司 | Strain type pressure sensor and preparation method thereof |
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| CN110672259A (en) * | 2019-11-11 | 2020-01-10 | 昆山灵科传感技术有限公司 | Packaging module and pressure sensor adopting same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113916415A (en) * | 2021-10-27 | 2022-01-11 | 罕王微电子（辽宁）有限公司 | Anode pressure sensor structure |
| CN117053959A (en) * | 2023-10-11 | 2023-11-14 | 广东润宇传感器股份有限公司 | Strain type pressure sensor and preparation method thereof |
| CN117053959B (en) * | 2023-10-11 | 2024-01-30 | 广东润宇传感器股份有限公司 | Strain type pressure sensor and preparation method thereof |
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