CN201297972Y - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
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- CN201297972Y CN201297972Y CNU2008202212230U CN200820221223U CN201297972Y CN 201297972 Y CN201297972 Y CN 201297972Y CN U2008202212230 U CNU2008202212230 U CN U2008202212230U CN 200820221223 U CN200820221223 U CN 200820221223U CN 201297972 Y CN201297972 Y CN 201297972Y
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- signal conditioning
- pressure
- sensing chip
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Abstract
The utility model discloses a pressure sensor, comprising an MEMS pressure sensing chip. Said MEMS pressure sensing chip is the Wheatstone bridge formed by arranging four polysilicon resistors in crystallographic orientation of a single crystal silicon film (110), the single crystal silicon film is composed of a lower silicon wafer, an upper silicon wafer and a passivation layer, the lower silicon wafer thereon is provided with a cavity, the lower silicon wafer and the upper silicon wafer are bonded together by thermally fusing silicon-silicon bond, the surfer of the upper silicon wafer thereon is provided with the passivation layer, the upper silicon wafer thereon is provided with a polysilicon resistor by a diffusion technique, and a metal film conducting wire and a pressure welding block are etched on the upper silicon wafer. The size of the pressure sensor using the silicon-silicon bond structure in the utility model can be small. The number of the chips on each silicon wafer can be increased by 50% or more. The cost of the sensor is greatly reduced and the performances thereof are stable and reliable. The sensor is the pressure sensor with low cost and high performances and can be widely used. Measurement range of the sensor is usually about 0.1-6 MPa and the highest working temperature is +125 degrees centigrade.
Description
Technical field
The utility model relates to a kind of sensor, relates to a kind of pressure transducer that utilizes the micro-electromechanical system (MEMS) technology specifically.
Background technology
The scope of pressure sensor application is very extensive, comprises petrochemical industry, hydraulic pressure, food, medicine, machinery, metallurgy, mining, electrical equipment and Medical Instruments or the like, almost spreads all over industry-by-industry.
The steam turbine of the engine of various diesel locomotives and electric power unit all lubricates by machine oil, in case engine oil pressure cross low will be because of oil starvation generation dry friction, cause violent wearing and tearing and heating, may damage engine or steam turbine, influence the normal operation of diesel locomotive or steam turbine, so engine oil pressure is one of important parameter of engine or steam turbine.For automobile, need on the engine of automobile, oil manometer be installed, be used for monitoring the engine oil pressure of engine, when the engine oil pressure of engine is lower than normal value, oil pressure gauge will send alerting signal, and the alarm lamp that is installed in the panel board is glittering, reminds the driver to change and interpolation machine oil.The pressure transducer that is applied at present on the automobile has multiple, generally all comprise the signal conditioning circuit plate, on the signal conditioning circuit plate, establish a presser sensor diaphragm, diaphragm directly bears the pressure of machine oil, pressure signal with machine oil passes on the signal conditioning circuit plate then, be processed into electric signal output through the signal conditioning circuit plate, but the thick film presser sensor diaphragm that the presser sensor diaphragm of said structure generally all adopts machining to form, often volume and weight is big, the cost height, precision is low, is very restricted in their application on electric power unit and automobile.The also microchip of useful micro-electromechanical technology, patent of invention as the application of applicant Xi'an Winner Information Control Co., Ltd., open day is on July 23rd, 2008, publication number is CN101226092A, denomination of invention is: the SOI complete silicon structure silicone-oil-filling high-temperature-resistance pressure sensor, comprise the pedestal 4-1 that disposes cavity, dispose convoluted diaphragm 7-1 and pressure ring 5-1 on the pedestal 4-1 cavity successively, electrode 1-1 is by glass insulator 2-1 and pedestal 4-1 Joint, also dispose the total silicon SOI pressure chip 9-1 of one [100] crystal face in the pedestal 4-1 cavity, total silicon SOI pressure chip 9-1 is sealed by electrostatic bonding with PYREX7740 glass 6-1 under vacuum environment, be filled with high-temperature silicon oil 13-1 in the pedestal 4-1 cavity, total silicon SOI pressure chip 9-1 goes up between press welding block and the electrode 1-1 and is connected with spun gold 8-1 by ultrasonic-thermocompression welding, advantage of the present invention is a kind of sensor of measuring big pressure under the hot environment that is applicable to, chip material is expensive, and technology is complicated, the cost height.Be suitable for special occasions uses such as some high temperature and high pressures.Pressure range 60-150MPa, working temperature can reach+and 200 ℃.
Summary of the invention
At some shortcoming and defect of above-mentioned electromechanical pressure sensor, the purpose of this utility model provides a kind of compact conformation, rationally, the normal temperature pressure transducer that carries out signal condition based on MEMS technology and dedicated IC chip stable and reliable for performance.
The purpose of this utility model can be achieved through the following technical solutions:
A kind of pressure transducer, comprise the MEMS pressure sensing chip, described MEMS pressure sensing chip is arranged on the Wheatstone bridge that constitutes on [110] crystal orientation of monocrystalline silicon thin film by four polysilicon resistances, monocrystalline silicon thin film is by following silicon wafer, last silicon wafer and purification layer constitute, on the following silicon wafer cavity is set, following silicon wafer and last silicon wafer lump together by the hot melt silicon-silicon bond, establish passivation layer on last silicon wafer surface, on last silicon wafer, polysilicon resistance is set with diffusion technique, on last silicon wafer, etch metallic film lead and press welding block, wherein the definition in crystal orientation is: basic characteristics of crystal are to have directivity, different directions crystalline nature difference along lattice, Bradley cuts down the lattice point of grid can regard division as on a series of systems of straight lines that are parallel to each other, these systems of straight lines are called brilliant row, same grid can form the different crystalline substance row of direction, and each brilliant row has defined one oppositely, is called the crystal orientation.There are [111], [100], [110] etc. in the crystal orientation of monocrystalline silicon, and described [110] crystal orientation is a kind of of monocrystalline silicon crystal orientation.
Above-mentioned pressure transducer, comprise pressure sensor circuit and signal conditioning circuit, pressure sensor circuit is connected with signal conditioning circuit, signal conditioning circuit is made of signal conditioning circuit and amplifying circuit, signal conditioning circuit is connected with amplifying circuit, described pressure sensor circuit is made of the MEMS pressure sensing chip, and signal conditioning circuit is made of the signal conditioning circuit plate, and the brachium pontis of the Wheatstone bridge of described MEMS pressure sensing chip is connected with the signal conditioning circuit plate.
Above-mentioned pressure transducer, comprise that sensor housing, presser sensor core body and terminals turn round, terminals are turned round with the sensor housing assembling and are formed cavity, the presser sensor core body is encapsulated in the cavity, described presser sensor core body is made of MEMS pressure sensing chip and signal conditioning circuit plate, and the MEMS pressure sensing chip is connected with the signal conditioning circuit plate.
Above-mentioned pressure transducer, the MEMS pressure sensing chip is bonded on the substrate, substrate bonding is on metab, the MEMS pressure sensing chip is encapsulated in the seal chamber of pipe cap and metab formation, described pipe cap is by the metal pressure ring, corrugated plate and metal pipe-wall constitute, the corrugated plate edge is located between metal pressure ring and the metal pipe-wall and with metal pressure ring and metal pipe-wall and welds, the bottom of the metal pipe-wall in the pipe cap is welded in and forms seal chamber on the metab, in seal chamber, be full of silicone oil, the signal conditioning circuit plate is bonded on the metab by insulating gel, spun gold lead-in wire on the MEMS pressure sensing chip is connected with the pipe leg, the pipe leg is welded on the metab by glass insulator, the MEMS pressure sensing chip is connected with the signal conditioning circuit plate through the pipe leg by the spun gold lead-in wire, and the pipe leg is connected with outer lead by connecting lead.
Above-mentioned pressure transducer, groove is established at described substrate middle part, and pressure sensing chip is bonded in the groove.
Above-mentioned pressure transducer, described substrate are any in ceramic substrate or printed circuit board (PCB) or the glass substrate.
Above-mentioned pressure transducer, metal pressure ring and corrugated plate are welded on the metal pipe-wall with a kind of mode in laser or argon arc or the electron beam.
Above-mentioned pressure transducer, the presser sensor core body is bonded on the sensor housing.
It is very little that the pressure sensor dimensions that the utility model has adopted silicon-silicon bond to close structure can be done, with the silicon cup type pressure transducer of same size with compare with the disclosed patent of CN101226092A, core number on each silicon wafer can improve 50% or higher, it is higher that silicon-silicon bond closes intensity, and impermeability is better.The sensor cost descends significantly, and performance is more reliable and more stable.This sensor belongs to the low-cost and high-performance pressure transducer, uses very extensive.Transducer range is generally: about 0.1-6MPa, maximum operating temperature is+125 ℃, and polysilicon resistance electric bridge pressure sensing chip is nursed one's health pressure signal, make sensor have good temperature stability and very high measuring accuracy, polysilicon resistance is an industry material commonly used, and cost is low, manufacture craft is simple, and compact conformation, rationally, and can with the supporting use of electro permanent magnetic indicating instrument, can be widely used in the pressure survey of coal, electric power and automobile and other industries.
Description of drawings
Fig. 1 is that publication number is the structural representation of CN101226092A patent of invention;
Fig. 2 is the utility model structural representation;
Fig. 3 is a circuit block diagram of the present utility model;
Fig. 4 is circuit theory diagrams of the present utility model;
Fig. 5 is the utility model pressure sensor chip figure;
Fig. 6 is the utility model pressure drag resistor stripe structure;
Fig. 7 is the utility model pressure sensor chip sectional view.
Embodiment
The utility model is done with detailed description below in conjunction with drawings and Examples:
As Fig. 3, Fig. 4, Fig. 5, Fig. 6 and pressure transducer shown in Figure 7, comprise the MEMS pressure sensing chip, described MEMS pressure sensing chip is arranged on the Wheatstone bridge that constitutes on [110] crystal orientation of monocrystalline silicon thin film 19 by four polysilicon resistances 18, monocrystalline silicon thin film 19 is by following silicon wafer 20, last silicon wafer 21 and purification layer 22 constitute, one cavity 23 is set on the following silicon wafer 20, following silicon wafer 20 and last silicon wafer 21 lump together by the hot melt silicon-silicon bond, establish passivation layer 22 on last silicon wafer 21 surfaces, on last silicon wafer 21, polysilicon resistance 18 is set, on last silicon wafer 21, etches metallic film lead 24 and press welding block 25 with diffusion technique.
As shown in Figure 3 and Figure 4, the utility model comprises pressure sensor circuit and signal conditioning circuit, pressure sensor circuit is connected with signal conditioning circuit, signal conditioning circuit is made of signal conditioning circuit and amplifying circuit, signal conditioning circuit is connected with amplifying circuit, described pressure sensor circuit is made of the MEMS pressure sensing chip, and signal conditioning circuit is made of the signal conditioning circuit plate, and the brachium pontis of the Wheatstone bridge of described MEMS pressure sensing chip is connected with the signal conditioning circuit plate.
Pressure transducer as shown in Figure 2 comprises sensor housing 1, presser sensor core body and terminals turn round 8, terminals are turned round 8 and are formed cavity with sensor housing 1 assembling, the presser sensor core body is encapsulated in the cavity, described presser sensor core body is made of MEMS pressure sensing chip 12 and signal conditioning circuit plate 14, MEMS pressure sensing chip 12 is connected with signal conditioning circuit plate 14, MEMS pressure sensing chip 12 is bonded on the substrate 5, substrate 5 is bonded on the metab 13, MEMS pressure sensing chip 12 is encapsulated in the seal chamber of pipe cap and metab 13 formation, described pipe cap is by metal pressure ring 10, corrugated plate 2 and metal pipe-wall 11 constitute, corrugated plate 2 edges are located between metal pressure ring 10 and the metal pipe-wall 11 and with metal pressure ring 10 and metal pipe-wall 11 and weld, the bottom of the metal pipe-wall 11 in the pipe cap is welded on the metab 13 and forms seal chamber, in seal chamber, be full of silicone oil, signal conditioning circuit plate 14 is bonded on the metab 13 by insulating gel 6, the edge of signal conditioning circuit plate 14 sticks on the housing 1 of sensor by insulation glue-line 17, another signal conditioning circuit plate 16 sticks on the sensor housing 1 by insulation glue-line 17, spun gold lead-in wire 4 on the MEMS pressure sensing chip 12 links to each other with pipe leg 7, pipe leg 7 is welded on the metab 13 by glass insulator, MEMS pressure sensing chip 12 is by spun gold lead-in wire 4 and pipe leg 7 and signal conditioning circuit plate 14,16 are connected, pipe leg 7 links to each other with outer lead 9 by connecting lead 15, MEMS pressure sensing chip 12 receives pressure signal and is input to circuit for signal conditioning plate 14 after treatment, 16, output electric signal after circuit for signal conditioning plate 14 and 16 is handled amplification, establish groove at the substrate middle part, pressure sensing chip is bonded in the groove, substrate is a ceramic substrate, described metal pressure ring, corrugated plate uses laser bonding on metal pipe-wall 11, the presser sensor core body is bonded on the sensor housing 1 by the first insulation glue-line 27, and the edge of two signal conditioning circuit plates is bonded on the outer sensor housing by the second insulation glue-line 17.
Substrate described in the utility model can also be a printed circuit board (PCB), can also be glass substrate.
Described metal pressure ring described in the utility model, corrugated plate can also be connected on the metal pipe-wall with argon arc welding, can also be welded on the metal pipe-wall with electron beam.
Principle of work of the present utility model is as follows: pressure sensing chip of the present invention constitutes an electric bridge, brachium pontis by four polysilicon resistances
,
Two ends and AM417 2., 3. pin links to each other, brachium pontis
,
End and AM417 5., 4. pin links to each other.2. AM417 passes through, and 3. pin provides the constant current power supply to presser sensor chip.When pressure acts on presser sensor chip, presser sensor chip will produce electric signal, what signal will be from presser sensor chip
,
End is exported, and from AM417 5., 4. pin input and amplification amplified the back electric signal and will be exported from the 7. pin of AM417, and once more by the desired electric signal of amplifier A amplification back output.The MEMS pressure transducer is to utilize the piezoresistive effect of silicon materials to make, its chip is made up of distortion film and sensitive resistance bridge arrangement usually, and when diaphragm adds upward pressure, diaphragm will deform, and cause that the bridge resistance, value changes, thereby realize the measurement of pressure.
The presser sensor chip structure:
As Fig. 5 is silicon piezoresistive pressure chip structure figure, 4 polysilicon resistance R
1, R
2, R
3, R
4On monocrystalline silicon thin film, resistance is produced on the position, edge of silicon thin film and along [110] crystal orientation, this is because in the edge of film by the diffusion technique preparation, when film is subjected to acting force, and the resistance variations maximum that strain causes.The R of resistor stripe among the figure
1An end link to each other resistance R with briquetting 25-3
1And R
2Link to each other resistance R by public press welding block 25-2
2And R
3Link to each other resistance R by public press welding block 25-1
3And R
4Link to each other by public press welding block 25-5, the other end of resistance R 4 links to each other with press welding block 4.These 4 pressure drag R
1, R
2, R
3, R
4Form Wheatstone bridge and constitute pressure detection circuit.After resistance is carried out, erode away a silicon cup at the back side of silicon, and under the vacuum condition, adopt anode linkage technology to be welded on the glass sheet, can make a presser sensor chip.During use, pressure welding fast 1 connects positive source, and press welding block 25-3 and 25-4 connect power cathode by compensating circuit, and press welding block 25-2 and 25-4 are two signal output parts of electric bridge testing circuit.If operating voltage is V in the electric bridge
In, when pressure drag changes, being changed to of its output voltage signal:
π in the formula
44Be piezoresistance coefficient, σ
1Be the meridional stress of pressure drag place silicon materials, σ
tTransverse stress for pressure drag place silicon materials.
As shown in Figure 6, resistance R
1, R
2, R
3, R
4Be made up of broken line structure 26, the two ends of resistance link to each other with metallic film lead 24.
Claims (8)
1, a kind of pressure transducer, comprise the MEMS pressure sensing chip, it is characterized in that: described MEMS pressure sensing chip is arranged on the Wheatstone bridge that constitutes on [110] crystal orientation of monocrystalline silicon thin film (19) by four polysilicon resistances (18), monocrystalline silicon thin film (19) is by following silicon wafer (20), last silicon wafer (21) and purification layer (22) constitute, one cavity (23) is set on the following silicon wafer (20), following silicon wafer (20) and last silicon wafer (21) lump together by the hot melt silicon-silicon bond, establish passivation layer (22) on last silicon wafer (21) surface, upward polysilicon resistance (18) is set at last silicon wafer (21), on last silicon wafer (21), etches metallic film lead (24) and press welding block (25) with diffusion technique.
2, pressure transducer according to claim 1, it is characterized in that: comprise pressure sensor circuit and signal conditioning circuit, pressure sensor circuit is connected with signal conditioning circuit, signal conditioning circuit is made of signal conditioning circuit and amplifying circuit, signal conditioning circuit is connected with amplifying circuit, described pressure sensor circuit is made of the MEMS pressure sensing chip, signal conditioning circuit is made of the signal conditioning circuit plate, and the brachium pontis of the Wheatstone bridge of described MEMS pressure sensing chip is connected with the signal conditioning circuit plate.
3, pressure transducer according to claim 2, it is characterized in that: comprise that sensor housing (1), presser sensor core body and terminals turn round (8), terminals are turned round (8) and are formed cavity with sensor housing (1) assembling, the presser sensor core body is encapsulated in the cavity, described presser sensor core body is made of MEMS pressure sensing chip (12) and signal conditioning circuit plate (14), (16), and MEMS pressure sensing chip (12) is connected with the signal conditioning circuit plate.
4, pressure transducer according to claim 3, it is characterized in that: MEMS pressure sensing chip (12) is bonded on the substrate (5), substrate (5) is bonded on the metab (13), MEMS pressure sensing chip (12) is encapsulated in the seal chamber of pipe cap and metab (13) formation, described pipe cap is by metal pressure ring (10), corrugated plate (2) and metal pipe-wall (11) constitute, corrugated plate (2) edge is located between metal pressure ring (10) and the metal pipe-wall (11) and with metal pressure ring (10) and metal pipe-wall (11) and welds, the bottom of the metal pipe-wall in the pipe cap (11) is welded in metab (13) and goes up the formation seal chamber, in seal chamber, be full of silicone oil, signal conditioning circuit plate (14) is bonded on the metab (13) by insulating gel, spun gold lead-in wire (4) on the MEMS pressure sensing chip (12) is connected with pipe leg (7), pipe leg (7) is welded on the metab (13) by glass insulator, MEMS pressure sensing chip (12) is connected with the signal conditioning circuit plate through pipe leg (7) by spun gold lead-in wire (4), and pipe leg (7) is connected with outer lead (9) by connecting lead (15).
5, pressure transducer according to claim 4 is characterized in that: groove is established at described substrate (5) middle part, and pressure sensing chip (12) is bonded in the groove.
6, pressure transducer according to claim 5 is characterized in that: described substrate is any in ceramic substrate or printed circuit board (PCB) or the glass substrate.
7, pressure transducer according to claim 6 is characterized in that: metal pressure ring and corrugated plate are welded on the metal pipe-wall with arbitrary mode in laser or argon arc or the electron beam.
8, pressure transducer according to claim 7 is characterized in that: the presser sensor core body is bonded on the sensor housing (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202212230U CN201297972Y (en) | 2008-11-24 | 2008-11-24 | Pressure sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202212230U CN201297972Y (en) | 2008-11-24 | 2008-11-24 | Pressure sensor |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101738280B (en) * | 2008-11-24 | 2011-08-17 | 河南理工大学 | Mems pressure sensor and manufacturing method thereof |
| CN102297737A (en) * | 2010-06-24 | 2011-12-28 | 上海华虹Nec电子有限公司 | Pressure sensor cavity structure and manufacturing method thereof |
| CN102539063A (en) * | 2011-12-16 | 2012-07-04 | 西安交通大学 | High-pressure sensor chip with SOI (silicon on insulator) rectangular film structure |
| CN102636301A (en) * | 2012-04-28 | 2012-08-15 | 无锡永阳电子科技有限公司 | Method of adhering sensor chips |
| CN102680145A (en) * | 2010-11-24 | 2012-09-19 | 霍尼韦尔国际公司 | Pressure transducer |
| CN102840940A (en) * | 2012-08-30 | 2012-12-26 | 安徽埃力智能科技有限公司 | Button-type five-dimensional force sensor |
| CN104533527A (en) * | 2014-12-25 | 2015-04-22 | 淄博矿业集团有限责任公司岱庄煤矿 | Pressure monitoring system of paste filling pipeline |
| CN109656296A (en) * | 2018-12-18 | 2019-04-19 | 中国船舶重工集团公司第七0五研究所 | A kind of small multi-channel sensor signal preprocessing module |
| CN109738109A (en) * | 2019-01-31 | 2019-05-10 | 南京信息工程大学 | A kind of high temperature micro-pressure pressure sensor and preparation method thereof, measuring system |
| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
-
2008
- 2008-11-24 CN CNU2008202212230U patent/CN201297972Y/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101738280B (en) * | 2008-11-24 | 2011-08-17 | 河南理工大学 | Mems pressure sensor and manufacturing method thereof |
| CN102297737B (en) * | 2010-06-24 | 2013-06-12 | 上海华虹Nec电子有限公司 | Pressure sensor cavity structure and manufacturing method thereof |
| CN102297737A (en) * | 2010-06-24 | 2011-12-28 | 上海华虹Nec电子有限公司 | Pressure sensor cavity structure and manufacturing method thereof |
| CN102680145B (en) * | 2010-11-24 | 2016-09-14 | 霍尼韦尔国际公司 | Pressure transducer |
| CN102680145A (en) * | 2010-11-24 | 2012-09-19 | 霍尼韦尔国际公司 | Pressure transducer |
| CN102539063B (en) * | 2011-12-16 | 2013-10-16 | 西安交通大学 | High-pressure sensor chip with SOI (silicon on insulator) rectangular film structure |
| CN102539063A (en) * | 2011-12-16 | 2012-07-04 | 西安交通大学 | High-pressure sensor chip with SOI (silicon on insulator) rectangular film structure |
| CN102636301A (en) * | 2012-04-28 | 2012-08-15 | 无锡永阳电子科技有限公司 | Method of adhering sensor chips |
| CN102840940A (en) * | 2012-08-30 | 2012-12-26 | 安徽埃力智能科技有限公司 | Button-type five-dimensional force sensor |
| CN104533527A (en) * | 2014-12-25 | 2015-04-22 | 淄博矿业集团有限责任公司岱庄煤矿 | Pressure monitoring system of paste filling pipeline |
| CN109656296A (en) * | 2018-12-18 | 2019-04-19 | 中国船舶重工集团公司第七0五研究所 | A kind of small multi-channel sensor signal preprocessing module |
| CN109738109A (en) * | 2019-01-31 | 2019-05-10 | 南京信息工程大学 | A kind of high temperature micro-pressure pressure sensor and preparation method thereof, measuring system |
| CN109738109B (en) * | 2019-01-31 | 2024-02-13 | 南京信息工程大学 | High-temperature micro-pressure sensor, manufacturing method thereof and measuring system |
| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Guan Rongfeng Inventor after: Tian Dalei Inventor after: Zhao Wenqing Inventor after: Wang Xing Inventor before: Guan Rongfeng Inventor before: Tian Dalei Inventor before: Zhao Wenqing Inventor before: Wang Xing |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20090826 Effective date of abandoning: 20081124 |