CN109238525A - Metallic film type pressure-temperature compound sensor and preparation method thereof - Google Patents
Metallic film type pressure-temperature compound sensor and preparation method thereof Download PDFInfo
- Publication number
- CN109238525A CN109238525A CN201810987767.6A CN201810987767A CN109238525A CN 109238525 A CN109238525 A CN 109238525A CN 201810987767 A CN201810987767 A CN 201810987767A CN 109238525 A CN109238525 A CN 109238525A
- Authority
- CN
- China
- Prior art keywords
- sensing element
- temperature
- layer
- resistance layer
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2268—Arrangements for correcting or for compensating unwanted effects
- G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Force In General (AREA)
Abstract
The present invention relates to metallic film type pressure-temperature compound sensors and preparation method thereof, sensing element therein includes sensing element matrix, one end of sensing element matrix is fixedly connected with pressure interface, multilayer film circuit is arranged in the other end of sensing element matrix, multilayer film circuit includes along the sensing element base end transition zone that successively lamination is arranged, insulating layer, electrostrictive strain resistance layer, temperature detecting resistance layer and pad layer, being made by for sensing element therein is sequentially prepared transition zone by thin film sputtering process in the end of sensing element matrix, insulating layer, electrostrictive strain resistance layer, after temperature detecting resistance layer and pad layer, temperature measurement circuit is produced by etching and surveys volt circuit.The present invention integrates pressure measurement circuitry and temperature measuring circuit, is produced on sensing element, solves existing pressure-temperature compound sensor or the technical issues of use temperature range is relatively narrow or measured temperature data cannot accurately be modified pressure data.
Description
Technical field
The present invention relates to a kind of pressure-temperature compound sensors and preparation method thereof, can be used for liquid-propellant rocket engine whirlpool
The pressure and temperature integrated measuring of wheel pump, thrust chamber, pipeline etc..
Background technique
Engine uses mutually independent sensor in test, test run, in-flight, pressure, temperature measurement at present.Pressure
Measurement generally uses strain pressure transducer and piezoresistive pressure sensor.When measured medium temperature and calibration temperature difference compared with
When big, the decline of pressure measurement accuracy needs to compensate pressure measurement data with temperature data.
There are two types of modes for temperature measurement: 1. insertion-type thermocouple sensor measurement medium temperature needs to open on the engine
Its pipeline is simultaneously inserted into hole, reduces the reliability of engine；2. thermal resistance sensor measures engine wall temperature, deposited with medium temperature
In certain difference.
Currently, pressure-temperature compound sensor is few in the market, and there are mainly two types of: pressure is 1. integrated on same sensing element
Resistive surveys pressure and semiconductor temp sensing function；Temperature data can provide accurate amendment for pressure measurement；Due to using semiconductor material
Material, so use temperature range is relatively narrow；2. strain or pressure drag load cell and platinum resistor temperature measuring element are integrated in by structural member
In one sensor；Due to thermometric and pressure is surveyed not on same sensing element, and temperature data cannot accurately carry out pressure data
Amendment, and temperature element away from medium distance farther out, there are larger differences with medium temperature for measured temperature.
Summary of the invention
For the existing pressure-temperature compound sensor of solution or use temperature range is relatively narrow or measured temperature data cannot be accurate
The technical issues of being modified to pressure data, the present invention provide metallic film type pressure-temperature compound sensor and sensitive member
The production method of part
Technical solution of the invention is as follows:
A kind of metallic film type pressure-temperature compound sensor, including pressure interface 1, sensing element 2, pinboard 3, lead
Line 6, shell 7 and socket 8, the pressure interface 1, sensing element 2, pinboard 3 and socket 8 are axially set gradually along shell 7, institute
The signal for stating sensing element 2 is transferred to socket 8 by pinboard 3 and conducting wire 6, is characterized in that
The sensing element 2 includes sensing element matrix 21, and one end of the sensing element matrix 21 and pressure interface 1 are solid
Multilayer film circuit is arranged in the other end of fixed connection, the sensing element matrix 21, and the multilayer film circuit includes along sensitivity
Transition zone 22, insulating layer 23, electrostrictive strain resistance layer 24, temperature detecting resistance layer 25 and the pad layer that 21 end face of element body is set gradually
26, volt circuit, the composite layer setting thermometric of the electrostrictive strain resistance layer 24, temperature detecting resistance layer 25 are surveyed in the setting of electrostrictive strain resistance layer 24
The pad and thermometric of volt circuit are surveyed in circuit, the composite layer setting of the electrostrictive strain resistance layer 24, temperature detecting resistance layer 25 and pad layer 26
The pad of circuit.
Further, to avoid the influence being under pressure, it is zero that the temperature measurement circuit, which is located at 21 stress of sensing element matrix,
The composite layer of the electrostrictive strain resistance layer 24 in region, temperature detecting resistance layer 25.
Further, the electrostrictive strain resistance layer surveyed volt circuit and be located at 21 stress largest portion of sensing element matrix.
Further, the insulating layer is Ta2O5And SiO2Film.Both film-insulated function admirables, good manufacturability.
The two is used cooperatively, and can mutually fill up the defects of another material lattice, and insulation performance is better than single use.
Further, the strained layer is 6J22 alloy firm.6J22 alloy firm can adjust alloy by process
The temperature coefficient of film improves product temperature performance so that the temperature coefficient of film and the diaphragm coefficient of expansion etc. are mutually matched.
Further, the temperature detecting resistance layer is Ni film.The temperature of Ni film and two layers of laminated film of 6J22 alloy firm
It is big and stable to spend coefficient, good linearity is conducive to compensation.
Further, further include cover sheet 4 and support base 5, the cover sheet 4 be arranged in the top of pinboard 3 and
It is coaxial with pinboard 3, and it is provided with the hole passed through for conducting wire 6, the setting of support base 5 is in cover sheet 4 and sensitive member
The outside of part 2 has supporting role to cover sheet 4, and lower end and pressure interface 1 weld.
Meanwhile the present invention also provides the systems of sensing element in above-mentioned metallic film type pressure-temperature compound sensor
Make method, be characterized in that, comprising the following steps:
1) sensing element matrix 21 is chosen, was sequentially prepared in the end of sensing element matrix 21 by thin film sputtering process
Cross layer 22, insulating layer 23, electrostrictive strain resistance layer 24, temperature detecting resistance layer 25 and pad layer 26；
2) variable resistance layer 24, temperature detecting resistance layer 25 and pad layer 26 are corresponded to according to survey volt circuit lithography layout to etch, is formed
Survey volt circuit and temperature measurement circuit；Surveying volt circuit lithography layout both includes surveying volt circuit or including temperature measurement circuit；
3) temperature detecting resistance layer 25 and pad layer 26 are etched according to temperature measurement circuit lithography layout, forms temperature measurement circuit；
4) pad layer 26 is etched according to pad lithography layout, reserves the pad of the pad and temperature measurement circuit of surveying volt circuit；
5) pressure interface 1, sensing element 2, pinboard 3, conducting wire 6, shell 7 and socket 8 are pressed into structure group with sensing element 2
Dress forms metallic film type pressure-temperature compound sensor.
The advantages of the present invention over the prior art are that:
Metallic film type pressure-temperature compound sensor of the invention, using metallic film type scheme, by pressure measurement electricity
Road and temperature measuring circuit integrate, and are produced on pressure-sensing device, and it is (general that temperature measuring circuit is more nearly medium
About 0.2mm~0.8mm), temperature measurement is more accurate, that is, solves the problems, such as pressure measurement temperature adjustmemt, and can not increase
Temperature measurement accuracy is improved in the case of engine aperture；Meanwhile use temperature range has also obtained great extension, reachable -200
DEG C~+200 DEG C.
Detailed description of the invention
Fig. 1 is the structure chart of the metallic film type pressure-temperature compound sensor of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of sensing element in Fig. 1；
Fig. 3 is the lithography layout of 6J22 alloy firm in sensing element in Fig. 2；
Fig. 4 is the lithography layout of Ni film in sensing element in Fig. 2；
Fig. 5 is the lithography layout of Au film in sensing element in Fig. 2.
Wherein appended drawing reference are as follows: 1- pressure interface, 2- sensing element, 21- sensing element matrix, 22- transition zone, 23- are exhausted
Edge layer, 24- electrostrictive strain resistance layer, 25- temperature detecting resistance layer, 26- pad layer, 3- pinboard, 4- cover sheet, 5- support base, 6- are led
Line, 7- shell, 8- socket.
Specific embodiment
As shown in Figs. 1-2, metallic film type pressure-temperature compound sensor of the invention is by pressure interface 1, sensing element
2, pinboard 3, cover sheet 4, support base 5, conducting wire 6, shell 7, socket 8 etc. form.Pinboard 3 is ceramic material.Pressure connects
Mouth 1, sensing element 2, pinboard 3 and socket 8 are axially set gradually along shell 7, and the top of pinboard 3 is arranged in cover sheet 4
And it is coaxial with pinboard 3, and it is provided with the hole passed through for conducting wire 6, the support base 5 is arranged in cover sheet 4 and sensitivity
The outside of element 2 has supporting role to cover sheet 4, and lower end and pressure interface 1 weld.The signal of sensing element 2 passes through
Pinboard 3 and conducting wire 6 are transferred to socket 8.Sensing element 2 include sensing element matrix 21, one end of sensing element matrix 21 with
Pressure interface 1 is fixedly connected, and multilayer film circuit is arranged in the other end of sensing element matrix 21, and multilayer film circuit includes along quick
Transition zone 22, insulating layer 23, electrostrictive strain resistance layer 24, temperature detecting resistance layer 25 and the pad layer that 21 end face of sensing unit matrix is set gradually
26, volt circuit is surveyed in the setting of electrostrictive strain resistance layer 24, and the composite layer setting temperature measurement circuit of electrostrictive strain resistance layer 24, temperature detecting resistance layer 25 is answered
The pad of volt circuit and temperature measurement circuit is surveyed in the composite layer setting of variable resistance layer 24, temperature detecting resistance layer 25 and pad layer 26.Insulating layer
23 be Ta2O5And SiO2Film.Strained layer is 6J22 alloy firm.Temperature detecting resistance layer 25 is Ni film.Temperature measurement circuit is located at sensitivity
The region that element stress is zero, only perception medium temperature, avoids the influence being under pressure.It surveys volt circuit and is located at sensing element matrix
21 stress largest portions, the strain that perception medium pressure generates on 21 surface of sensing element matrix generate pressure signal.
Sensing element matrix 21 of the invention uses high-strength stainless steel material, is made on it of sputter deposition craft
Sensing element 2 is made in presser sensor circuit and temperature-sensitive circuit.Transition zone 22 of the invention is sensing element matrix 21 and its
The transition of upper-layer functionality film mainly serves and increases adhesive force.Insulating layer 23 is to make function film and sensing element matrix 21
Isolation, insulation.Electrostrictive strain resistance layer 24 is converted to electric signal, realizes pressure measurement for experiencing pressure-strain.Temperature detecting resistance layer 25
Temperature measurement circuit is made with 24 layers of composition composite layer of electrostrictive strain resistance layer under it.Pad layer 26 realizes internal survey volt circuit and thermometric electricity
Road and external connection.
As shown in figure 3,6J22 alloy firm is electrostrictive strain resistance layer 24,4 fixed strain resistors are made by chemical wet etching
With several adjustable resistances, and resistance bridge is formed, as survey volt circuit, adjustable resistance trim pressure by the modified method of laser
The offset output of power measurement；Fig. 4 show the lithography layout of Ni film, and the laminated film of Ni film and 6J22 alloy firm is temperature
Film layer is spent, 2 fixed temperature detecting resistances and 2 adjustable resistances are made by chemical wet etching；Adjustable resistance is modified by laser
Method trims the reference resistor value of temperature measurement.
The production method of sensing element in the present invention, comprising the following steps:
1) transition zone 22 is sequentially prepared by thin film sputtering process in the end of sensing element matrix 21, insulating layer 23, answered
Variable resistance layer 24, temperature detecting resistance layer 25 and pad layer 26；
2) variable resistance layer 24, temperature detecting resistance layer 25 and pad layer 26 are corresponded to according to survey volt circuit lithography layout to etch, is formed
Survey volt circuit and temperature measurement circuit；Surveying volt circuit lithography layout both includes surveying volt circuit or including temperature measurement circuit；
3) temperature detecting resistance layer 25 and pad layer 26 are etched according to temperature measurement circuit lithography layout, forms temperature measurement circuit；
4) pad layer 26 is etched according to the pad lithography layout of Fig. 5, reserves the pad for surveying volt circuit and temperature measurement circuit.
When work, sensor is connect by pressure interface 1 with engine pressure interface, realizes press-in connection；Pass through socket 8
It is connect with measuring system, realizes electrical connection.When the engine operates, medium enters sensor inner cavity from pressure interface 1, sensitive
Survey volt circuit and temperature measurement circuit on element body 21 are respectively induced pressure medium and temperature, and generation is in pressure medium and temperature
The electric signal of linear relationship；Temperature signal carries out temperature adjustmemt to pressure signal simultaneously.Pass through ceramic adapter, conducting wire 6, socket
8 connect with measuring system, transmit pressure measurement signal and temperature measurement signal.
Claims (8)
1. metallic film type pressure-temperature compound sensor, including pressure interface (1), sensing element (2), pinboard (3), lead
Line (6), shell (7) and socket (8), the pressure interface (1), sensing element (2), pinboard (3) and socket (8) are along shell
(7) axial to set gradually, the signal of the sensing element (2) is transferred to socket (8) by pinboard (3) and conducting wire (6), special
Sign is:
The sensing element (2) includes sensing element matrix (21), one end of the sensing element matrix (21) and pressure interface
(1) it is fixedly connected, multilayer film circuit is arranged in the other end of the sensing element matrix (21), and the multilayer film circuit includes
Transition zone (22), the insulating layer (23), electrostrictive strain resistance layer (24), temperature detecting resistance set gradually along sensing element matrix (21) end face
Layer (25) and pad layer (26) are arranged in the electrostrictive strain resistance layer (24) and survey volt circuit, in the electrostrictive strain resistance layer (24), thermometric
Temperature measurement circuit is arranged in the composite layer of resistive layer (25), in the electrostrictive strain resistance layer (24), temperature detecting resistance layer (25) and pad layer
(26) pad of volt circuit and the pad of temperature measurement circuit are surveyed in composite layer setting.
2. metallic film type pressure-temperature compound sensor according to claim 1, it is characterised in that:
It is the electrostrictive strain resistance layer (24) of null range, temperature detecting resistance layer that the temperature measurement circuit, which is located at sensing element matrix (21) stress,
(25) composite layer.
3. metallic film type pressure-temperature compound sensor according to claim 1 or 2, it is characterised in that:
The electrostrictive strain resistance layer (24) surveyed volt circuit and be located at sensing element matrix (21) stress largest portion.
4. metallic film type pressure-temperature compound sensor according to claim 3, it is characterised in that:
The insulating layer (23) is Ta2O5And SiO2Film.
5. metallic film type pressure-temperature compound sensor according to claim 4, it is characterised in that:
The electrostrictive strain resistance layer (24) is 6J22 alloy firm.
6. metallic film type pressure-temperature compound sensor according to claim 5, it is characterised in that:
The temperature detecting resistance layer (25) is Ni film.
7. metallic film type pressure-temperature compound sensor according to claim 6, it is characterised in that:
Further include cover sheet (4) and support base (5), cover sheet (4) setting pinboard (3) top and with switching
Plate (3) coaxially, and is provided with the hole passed through for conducting wire (6), and the support base (5) is arranged in cover sheet (4) and sensitivity
The outside of element (2) has supporting role to cover sheet (4), and lower end and pressure interface (1) are welded.
8. the production method of metallic film type pressure-temperature compound sensor as claimed in claim 1 to 7, feature exist
In, comprising the following steps:
1) sensing element matrix (21) are chosen, was sequentially prepared in the end of sensing element matrix (21) by thin film sputtering process
Cross layer (22), insulating layer (23), electrostrictive strain resistance layer (24), temperature detecting resistance layer (25) and pad layer (26)；
2) it corresponds to variable resistance layer (24), temperature detecting resistance layer (25) and pad layer (26) according to survey volt circuit lithography layout to etch, shape
At survey volt circuit and temperature measurement circuit；Surveying volt circuit lithography layout both includes surveying volt circuit or including temperature measurement circuit；
3) temperature detecting resistance layer (25) and pad layer (26) are etched according to temperature measurement circuit lithography layout, forms temperature measurement circuit；
4) pad layer (26) are etched according to pad lithography layout, reserves the pad of the pad and temperature measurement circuit of surveying volt circuit, obtains
Sensing element (2)；
5) by pressure interface (1), sensing element (2), pinboard (3), conducting wire (6), shell (7) and socket (8) same to sensing element
(2) it is assembled by structure, forms metallic film type pressure-temperature compound sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810987767.6A CN109238525A (en) | 2018-08-28 | 2018-08-28 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810987767.6A CN109238525A (en) | 2018-08-28 | 2018-08-28 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109238525A true CN109238525A (en) | 2019-01-18 |
Family
ID=65067834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810987767.6A Pending CN109238525A (en) | 2018-08-28 | 2018-08-28 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109238525A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112484630A (en) * | 2020-12-09 | 2021-03-12 | 湖南启泰传感科技有限公司 | Thin film resistance strain pressure sensor and layout optimization method thereof |
| WO2021185004A1 (en) * | 2020-03-19 | 2021-09-23 | 深圳纽迪瑞科技开发有限公司 | Pressure sensing apparatus and pressure sensing device |
| CN114509104A (en) * | 2021-12-14 | 2022-05-17 | 西安航天动力研究所 | Temperature and pressure composite sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1975358A (en) * | 2006-12-14 | 2007-06-06 | 中国航天科技集团公司第六研究院第十一研究所 | Low-temperature film pressure sensor and producing method thereof |
| KR20110075255A (en) * | 2009-12-28 | 2011-07-06 | 재단법인 포항산업과학연구원 | Metal thin film type strain gauge for pressure sensor and pressure sensor having the strain gauge |
| CN101566514B (en) * | 2009-06-02 | 2011-08-24 | 中国航天科技集团公司第四研究院第四十四研究所 | Integrated temperature thin film pressure sensor |
| CN103308242A (en) * | 2013-05-13 | 2013-09-18 | 上海天沐自动化仪表有限公司 | Thin-film pressure sensor adopting titanium oxynitride as strain material and manufacturing method thereof |
| CN106525264A (en) * | 2016-12-20 | 2017-03-22 | 中国航天空气动力技术研究院 | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof |
| CN206362470U (en) * | 2016-12-16 | 2017-07-28 | 陕西电器研究所 | A kind of high insulation resistance of resistance to 500V sputtered film sensing element |
| CN107621317A (en) * | 2017-09-11 | 2018-01-23 | 重庆大学 | A kind of surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane and preparation method thereof |
-
2018
- 2018-08-28 CN CN201810987767.6A patent/CN109238525A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1975358A (en) * | 2006-12-14 | 2007-06-06 | 中国航天科技集团公司第六研究院第十一研究所 | Low-temperature film pressure sensor and producing method thereof |
| CN101566514B (en) * | 2009-06-02 | 2011-08-24 | 中国航天科技集团公司第四研究院第四十四研究所 | Integrated temperature thin film pressure sensor |
| KR20110075255A (en) * | 2009-12-28 | 2011-07-06 | 재단법인 포항산업과학연구원 | Metal thin film type strain gauge for pressure sensor and pressure sensor having the strain gauge |
| CN103308242A (en) * | 2013-05-13 | 2013-09-18 | 上海天沐自动化仪表有限公司 | Thin-film pressure sensor adopting titanium oxynitride as strain material and manufacturing method thereof |
| CN206362470U (en) * | 2016-12-16 | 2017-07-28 | 陕西电器研究所 | A kind of high insulation resistance of resistance to 500V sputtered film sensing element |
| CN106525264A (en) * | 2016-12-20 | 2017-03-22 | 中国航天空气动力技术研究院 | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof |
| CN107621317A (en) * | 2017-09-11 | 2018-01-23 | 重庆大学 | A kind of surface acoustic wave chip of high-temp pressure sensor based on SOI and piezoelectric membrane and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021185004A1 (en) * | 2020-03-19 | 2021-09-23 | 深圳纽迪瑞科技开发有限公司 | Pressure sensing apparatus and pressure sensing device |
| WO2021185000A1 (en) * | 2020-03-19 | 2021-09-23 | 深圳纽迪瑞科技开发有限公司 | Strain sensing film, pressure sensor and strain sensing system |
| CN112484630A (en) * | 2020-12-09 | 2021-03-12 | 湖南启泰传感科技有限公司 | Thin film resistance strain pressure sensor and layout optimization method thereof |
| CN114509104A (en) * | 2021-12-14 | 2022-05-17 | 西安航天动力研究所 | Temperature and pressure composite sensor |
| CN114509104B (en) * | 2021-12-14 | 2023-08-25 | 西安航天动力研究所 | Temperature and pressure composite sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4586018A (en) | Combustion pressure sensor | |
| CN101738280B (en) | Mems pressure sensor and manufacturing method thereof | |
| US7503221B2 (en) | Dual span absolute pressure sense die | |
| EP0164413B2 (en) | Pressure transducer | |
| US7644625B2 (en) | Differential pressure sense die based on silicon piezoresistive technology | |
| CN109238525A (en) | Metallic film type pressure-temperature compound sensor and preparation method thereof | |
| CN107436205B (en) | On-chip temperature compensation graphene pressure sensor | |
| US20160349129A1 (en) | Integrated pressure sensor with double measuring scale, pressure measuring device including the integrated pressure sensor, braking system, and method of measuring a pressure using the integrated pressure sensor | |
| CN201297972Y (en) | Pressure sensor | |
| CN109238524B (en) | Wide-temperature-zone high-precision sputtering film pressure sensor and manufacturing method thereof | |
| CN107941385B (en) | Pressure sensor based on graphene piezoresistance junction | |
| CN111537054B (en) | Pressure and underwater sound integrated sensor and preparation method thereof | |
| JP3079983B2 (en) | Semiconductor combustion pressure sensor | |
| CN202304895U (en) | Sputtered film chip for realizing simultaneous test of temperature and pressure signals | |
| JP2014106013A (en) | Pressure sensor | |
| CN106644195A (en) | High-temperature and large-range silicon-sapphire pressure sensor structure | |
| US5932809A (en) | Sensor with silicon strain gage | |
| KR20070096655A (en) | Micro pressure sensor | |
| EP0145146B1 (en) | Combustion pressure sensor | |
| CN113758613B (en) | SOI-based resistance center placed piezoresistive pressure sensor | |
| CN103954383A (en) | Bottom separation plate microsensor capable of being used for measuring wall shear stress in high temperature environment and manufacturing method thereof | |
| US20100122581A1 (en) | Flexible transducer structures | |
| CN113551813A (en) | Integrated temperature control micro-miniature silicon piezoresistive pressure sensor and manufacturing method thereof | |
| CN109855789A (en) | It is a kind of for monitoring the sensor of underwater small aircraft surface pressing | |
| CN108896235A (en) | A kind of MEMS flexibility copper-wanganese-constantan compounded super-high tension force snesor and manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190118 |