CN202304895U - Sputtered film chip for realizing simultaneous test of temperature and pressure signals - Google Patents
Sputtered film chip for realizing simultaneous test of temperature and pressure signals Download PDFInfo
- Publication number
- CN202304895U CN202304895U CN 201120416632 CN201120416632U CN202304895U CN 202304895 U CN202304895 U CN 202304895U CN 201120416632 CN201120416632 CN 201120416632 CN 201120416632 U CN201120416632 U CN 201120416632U CN 202304895 U CN202304895 U CN 202304895U
- Authority
- CN
- China
- Prior art keywords
- temperature
- resistance
- test
- sputtered film
- film chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses a sputtered film chip for realizing simultaneous test of temperature and pressure signals, and belongs to the field of sensors. For solving the problem that the measurement function of the conventional sensor is single, the sputtered film chip comprises a metal elastomer, an insulating film is arranged on the metal elastomer, an alloy film resistor and a thermal resistor are arranged on the insulating film, the alloy film resistor is positioned above a strain zone of the metal elastomer, the thermal resistor is positioned above a non-strain zone of the metal elastomer, a protective film is arranged on the alloy film resistor and the thermal resistor, an electrode is arranged on the protective film, and the alloy film resistor and the thermal resistor form a Wheatstone bridge through a lead connected with the electrode. The sputtered film chip realizes simultaneous test of pressure and temperature, is high in testing precision, meets the precision requirement of 0.2 percent, and is simple in structure, small in size and convenient to use.
Description
Technical field
The utility model relates to sensor field, is specially a kind of sputtered film chip of realize temperature and pressure signal time test.
Background technology
In recent years, flourish along with sensor technology, the user is also increasingly high to the request for utilization of sensor.Wherein use the widest still test of pressure and temperature signal.Because both test philosophies are different, when the user need monitor the pressure and temperature signal simultaneously, it had to use 2 sensors to be tested.
Chinese patent ZL200510030836.7 discloses a kind of temperature and pressure transmitter; It comprises: a housing; Said housing is made up of a sonde body and a connected cavity, also comprises a temperature sensitive member, four pressure responsive element, a temperature sensor circuit and pressure sensor circuits; Said temperature sensor circuit and said pressure sensor circuit are arranged in the said cavity; Said sonde body one end face is provided with mounting hole, and said temperature sensitive member is arranged on the said mounting hole, also is interval with four fluid passing holes on the said end face of said sonde body, and said pressure responsive element is separately positioned in the said fluid passing hole.Though this sensor is simultaneously probe temperature and pressure also, it comes down to the rigid of pressure transducer and temperature sensor and pieces together, and complex structure.
The utility model content
In order to overcome the single deficiency of existing sensors measurement function; The utility model aims to provide a kind of sputtered film chip of realize temperature and pressure signal time test; This sputtered film chip can be accomplished the test of pressure and temperature signal simultaneously; Its pressure signal can carry out the test of gauge pressure and absolute pressure, and testing range is optional between 0～60MPa; The test specification of temperature signal is-55 ℃～200 ℃, and both measuring accuracies are 0.2%.
To achieve these goals; The technical scheme that the utility model adopted is: the sputtered film chip of test comprises the metallic elastic body in the time of said realization temperature and pressure signal, and its design feature is that said metallic elastic body is provided with one deck dielectric film; Said dielectric film is provided with alloy firm resistance and thermal resistance; Said alloy firm resistance is positioned at the strain regions top of metallic elastic body, and said thermal resistance is positioned at the non-strain regions top of metallic elastic body, on said alloy firm resistance and thermal resistance, is provided with layer protecting film; On diaphragm, be provided with electrode, said alloy firm resistance is formed Wheatstone bridge with thermal resistance through the lead-in wire that links to each other with electrode.
The pressure test range of the utility model is 0～60MPa, and the temperature test range of the utility model is-55 ℃～200 ℃, and both measuring accuracies are 0.2%.
Said alloy firm resistance material is a NiCr resistance, and thermal resistance is a Pt resistance.
At first, confirm suitable metallic elastic body, for example, confirm elastomeric volume size, confirm elastomeric diaphragm thickness or the like according to the pressure range according to the installation situation of product according to test environment.Mode through ion sputtering is preparing one deck dielectric film on 17-4PH metallic elastic body then, guarantees the insulating property of new film; In the strain regions at metallic elastic body center, prepare alloy firm resistance again, when diaphragm applied force is out of shape, sheet resistance generation respective change; Preparation metal fever resistance in the non-strain regions of metallic elastic body periphery, when variation of ambient temperature, respective change also takes place in metal fever resistance; Preparation layer protecting film and electrode on alloy firm resistance and metal fever resistance are protected resistance at last, go between through electrode simultaneously, and resistance is formed Wheatstone bridge, obtain the electric signal with the linear variation of pressure and temperature signal.
By said structure, can realize the composite test of pressure and temperature signal.As shown in Figure 1, P1 is a working pressure among the figure, is applied on the pressure-sensitive diaphragm of metallic elastic body; Under the P1 effect; The Hui Sideng electricity that 4 alloy firm resistance is formed can answer deformation and the resistance distortion takes place and export corresponding electric signal (when P2 be respectively vacuum state, during with extraneous volume atmosphere or for atmospheric pressure of sealing, the working sensor type then is respectively absolute pressure, aeration type gauge pressure and enclosure-type gauge pressure transducer); The temperature of the temperature of the conduction thermal resistance through the metallic elastic body and actuating medium is identical simultaneously, and demonstrates corresponding resistance value, thus realize temperature test (owing to thermal resistance not in strain regions, P1 can not exert an influence to thermal resistance).
Compared with prior art, the beneficial effect of the utility model is: the utility model prepares thermal resistance and strain resistor through the mode of ion sputtering and ion etching on same metallic elastic body, realized the synchronism detection of temperature and pressure; Wherein strain resistor is prepared in the strain regions of metallic elastic body, realizes the test of pressure, and thermal resistance then is prepared in the non-strain regions of metallic elastic body; Realize the test of temperature signal, the influence of the signal that is not stressed, the processing through circuit at last; Obtain the needed standard signal of user, and measuring accuracy is high, reaches 0.2% accuracy requirement; Simple in structure, volume is little, and is easy to use.
Below in conjunction with accompanying drawing and embodiment the utility model is done further to set forth.
Description of drawings
Fig. 1 is the structure principle chart of a kind of embodiment of the utility model.
In the drawings
1-metallic elastic body; The 2-dielectric film; 3-alloy firm resistance;
The 4-diaphragm; The 5-thermal resistance.
Embodiment
A kind of sputtered film chip of realize temperature and pressure signal time test; As shown in Figure 1, comprise that the bottom has the metallic elastic body 1 of semi-open cavity, said metallic elastic body 1 is provided with one deck dielectric film 2; Said dielectric film 2 is provided with alloy firm resistance 3 and thermal resistance 5; Said alloy firm resistance 3 is positioned at the strain regions top of metallic elastic body 1, is used to realize the test of pressure, and said thermal resistance 5 is positioned at the non-strain regions top of metallic elastic body 1; Be used to realize the test of temperature signal; On said alloy firm resistance 3 and thermal resistance 5, be provided with layer protecting film 4, on diaphragm 4, be provided with electrode, said alloy firm resistance 3 and thermal resistance 5 are formed Wheatstone bridge through the lead-in wire that links to each other with electrode.The pressure test range of said sputtered film chip is 0～60MPa, and the temperature test range is-55 ℃～200 ℃.
The content that the foregoing description is illustrated is to be understood that to these embodiment and only is used to be illustrated more clearly in the utility model; And be not used in the restriction the utility model scope; After having read the utility model, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the utility model.
Claims (5)
1. the sputtered film chip of realize a temperature and pressure signal time test; Comprise metallic elastic body (1), it is characterized in that said metallic elastic body (1) is provided with one deck dielectric film (2); Said dielectric film (2) is provided with alloy firm resistance (3) and thermal resistance (5); Said alloy firm resistance (3) is positioned at the strain regions top of metallic elastic body (1), and said thermal resistance (5) is positioned at the non-strain regions top of metallic elastic body (1), on said alloy firm resistance (3) and thermal resistance (5), is provided with layer protecting film (4); On diaphragm (4), be provided with electrode, said alloy firm resistance (3) is formed Wheatstone bridge with thermal resistance (5) through the lead-in wire that links to each other with electrode.
2. the sputtered film chip of test is characterized in that the pressure test range of said sputtered film chip is 0～60MPa in the time of realization temperature and pressure signal according to claim 1.
3. the sputtered film chip of test is characterized in that the temperature test range of said sputtered film chip is-55 ℃～200 ℃ in the time of realization temperature and pressure signal according to claim 1.
4. the sputtered film chip of test is characterized in that said metallic elastic body (1) bottom has a semi-open cavity in the time of realization temperature and pressure signal according to claim 1.
5. the sputtered film chip of test is characterized in that said alloy firm resistance (3) material is a NiCr resistance in the time of realization temperature and pressure signal according to claim 1, and thermal resistance (5) is a Pt resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120416632 CN202304895U (en) | 2011-10-27 | 2011-10-27 | Sputtered film chip for realizing simultaneous test of temperature and pressure signals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120416632 CN202304895U (en) | 2011-10-27 | 2011-10-27 | Sputtered film chip for realizing simultaneous test of temperature and pressure signals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202304895U true CN202304895U (en) | 2012-07-04 |
Family
ID=46373772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120416632 Expired - Lifetime CN202304895U (en) | 2011-10-27 | 2011-10-27 | Sputtered film chip for realizing simultaneous test of temperature and pressure signals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202304895U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107014438A (en) * | 2017-04-24 | 2017-08-04 | 西北工业大学 | High temperature high pressure liquid pressure, sensor for measuring temperature based on ceramic package |
| CN107621285A (en) * | 2017-10-17 | 2018-01-23 | 雷念程 | High temperature wide range pressure sensor and its manufacture method with temperature measurement function |
| CN109341777A (en) * | 2018-11-21 | 2019-02-15 | 中国航空工业集团公司北京航空精密机械研究所 | A kind of sensor monitored for bearing temperature/strain signal |
| CN110095054A (en) * | 2019-04-03 | 2019-08-06 | 中国科学院力学研究所 | A kind of resistance strain plate |
| CN112305468A (en) * | 2019-07-29 | 2021-02-02 | 甘肃省科学院传感技术研究所 | Method and structure for annealing giant magnetoresistance sensor |
| WO2022056850A1 (en) * | 2020-09-18 | 2022-03-24 | 深圳纽迪瑞科技开发有限公司 | Temperature and pressure sensor and electronic device |
-
2011
- 2011-10-27 CN CN 201120416632 patent/CN202304895U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107014438A (en) * | 2017-04-24 | 2017-08-04 | 西北工业大学 | High temperature high pressure liquid pressure, sensor for measuring temperature based on ceramic package |
| CN107014438B (en) * | 2017-04-24 | 2019-05-10 | 西北工业大学 | High temperature high pressure liquid pressure based on ceramic package, sensor for measuring temperature |
| CN107621285A (en) * | 2017-10-17 | 2018-01-23 | 雷念程 | High temperature wide range pressure sensor and its manufacture method with temperature measurement function |
| CN109341777A (en) * | 2018-11-21 | 2019-02-15 | 中国航空工业集团公司北京航空精密机械研究所 | A kind of sensor monitored for bearing temperature/strain signal |
| CN109341777B (en) * | 2018-11-21 | 2021-07-06 | 中国航空工业集团公司北京航空精密机械研究所 | Sensor for monitoring bearing temperature/strain signal |
| CN110095054A (en) * | 2019-04-03 | 2019-08-06 | 中国科学院力学研究所 | A kind of resistance strain plate |
| CN112305468A (en) * | 2019-07-29 | 2021-02-02 | 甘肃省科学院传感技术研究所 | Method and structure for annealing giant magnetoresistance sensor |
| CN112305468B (en) * | 2019-07-29 | 2023-09-26 | 甘肃省科学院传感技术研究所 | Method and structure for annealing giant magneto-resistance sensor |
| WO2022056850A1 (en) * | 2020-09-18 | 2022-03-24 | 深圳纽迪瑞科技开发有限公司 | Temperature and pressure sensor and electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202304895U (en) | Sputtered film chip for realizing simultaneous test of temperature and pressure signals | |
| CN205785644U (en) | MEMS minute-pressure pressure transducer | |
| CN105466626B (en) | Diaphragm pressure sensor and its manufacturing method | |
| EP2568270A1 (en) | Packaged sensor with multiple sensors elements | |
| CN201653604U (en) | Pressure sensor | |
| CN102012288B (en) | Composite micro-electro-mechanical system (MEMS) high-temperature resistant ultrahigh-pressure sensor | |
| CN207366110U (en) | A kind of high sensibility pressure transducer | |
| CN107436205A (en) | Temperature-compensating graphene pressure sensor in a kind of piece | |
| CN212807437U (en) | Core body of differential pressure sensor | |
| CN104406627A (en) | Wearable flexible touch sensor of artificial hand and touch detection system thereof | |
| CN101526404A (en) | Temperature and pressure compound sensor | |
| CN203178006U (en) | Pressure transducer packaging structure | |
| CN203490009U (en) | Low-range sputtered thin film type force transducer | |
| CN109238525A (en) | Metallic film type pressure-temperature compound sensor and preparation method thereof | |
| CN202974521U (en) | Force sensor based on ceramic base strain gage | |
| CN207197705U (en) | Temperature-compensating graphene pressure sensor in a kind of piece | |
| CN101694409A (en) | Method for manufacturing all-silica pressure chips of SOI oil pressure sensor | |
| CN102052985B (en) | MEMS cylinder-type high-temperature and superhigh-pressure resistant sensor | |
| CN203011606U (en) | Resistance strain gauge based intelligent pressure detecting system | |
| CN201803816U (en) | Combined transducer force-measuring device | |
| CN202403858U (en) | Pressure detection device of electric pressure cooker | |
| CN205785612U (en) | A kind of surface acoustic wave sensor based on microgap pressure monitoring | |
| CN109994596A (en) | A kind of high-performance wide-range band temperature sensitive type film chip varistor | |
| CN204679198U (en) | Easy assembling type sputtered thin film pressure transducer | |
| CN208012800U (en) | More pin capacitance formula pressure sensors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |