CN109994596A - A kind of high-performance wide-range band temperature sensitive type film chip varistor - Google Patents
A kind of high-performance wide-range band temperature sensitive type film chip varistor Download PDFInfo
- Publication number
- CN109994596A CN109994596A CN201711500207.5A CN201711500207A CN109994596A CN 109994596 A CN109994596 A CN 109994596A CN 201711500207 A CN201711500207 A CN 201711500207A CN 109994596 A CN109994596 A CN 109994596A
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- China
- Prior art keywords
- layer film
- temperature sensitive
- film
- chip varistor
- sensitive type
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- 229920001971 elastomer Polymers 0.000 claims abstract description 18
- 239000000806 elastomer Substances 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 239000010935 stainless steel Substances 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000011946 reduction process Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a kind of high-performance wide-range of IC chip technical field band temperature sensitive type film chip varistors, including elastomer matrix, the top of the elastomer matrix successively sputters isolated layer film from the bottom up, strain layer film and lead layer film, the top sputtering of the lead layer film has dust-proof anti-oxidation protection layer film, and protection layer film is wrapped in isolated layer film, strain the outside of layer film and lead layer film, temperature drift of the invention is small, zero point output can reach≤0.005%FS/ DEG C, the operating temperature range of product is wide, chip can under -55 DEG C~300 DEG C temperature environments reliably working, the present invention extends the range section of chip varistor, film chip varistor is expanded in liquid level, the use scope in the fields such as low pressure, with easy for installation, the operation is stable, long product lifecycle The advantages of；Pressure-sensitive circuit and temperature sensitive circuit integration make, and can effectively reduce production cost, reduce small product size.
Description
Technical field
The present invention relates to IC chip technical field, specially a kind of high-performance wide-range band temperature sensitive type film is pressure-sensitive
Chip.
Background technique
Whole world transducer market scale reaches 170,000,000,000 dollars at present, and wherein pressure sensor market scale reaches 32,000,000,000
Dollar, and grown continuously and fast with annual 20% or more speed.Chip varistor is the core component of pressure sensor, main at present
The chip varistor manufacturer wanted concentrates on American-European countries, and the Chinese chip varistor overwhelming majority relies on import.
Chip varistor as pressure sensor core component, for measuring gas, liquid, fluid under various environment etc.
The pressure of medium.Current chip varistor uses traditional integrated circuit technology, circuit is made in silicon substrate, due to silicon semiconductor
Temperature characterisitic, made chip varistor temperature drift is big, and operating temperature range is narrow, and performance is poor；In addition, current pressure-sensitive core
Piece is not capable of measuring temperature, in the occasion for needing while measuring temperature and pressure, needs the temperature sensitive chip of additional, there are product structures
It is complicated, volume is big, inconvenient installation, cannot accurate measuring medium temperature, temperature data delay the disadvantages of.For this purpose, we have proposed
A kind of high-performance wide-range band temperature sensitive type film chip varistor comes into operation, to solve the above problems.
Summary of the invention
The purpose of the present invention is to provide a kind of high-performance wide-range band temperature sensitive type film chip varistors, to solve above-mentioned back
There are product structure complexity, volumes for the existing chip varistor proposed in scape technology greatly, inconvenience is installed, cannot accurate measuring medium
The problem of the disadvantages of temperature, temperature data delay.
To achieve the above object, the invention provides the following technical scheme: a kind of high-performance wide-range band temperature sensitive type film pressure
Quick chip, including elastomer matrix, it is thin that the top of the elastomer matrix successively sputters isolated layer film, strained layer from the bottom up
The top sputtering of film and lead layer film, the lead layer film has dust-proof anti-oxidation protection layer film, and protects layer film
The outside for being wrapped in isolated layer film, straining layer film and lead layer film.
Preferably, the elastomer matrix is 17-4PH stainless steel material, is dug stainless steel bars bottom using machining
Sky is at cup-shaped, further according to range requirement, forms the flexible sheet of different-thickness in bottom of a cup.
Preferably, the flexible sheet is thinned to 0.05mm to 1mm using reduction process.
Preferably, the lead layer film is photo-etched into electrode using the method for photoetching.
Preferably, the strain layer film is photo-etched into the Hui Sideng electric bridge of senses change in pressure using the method for photoetching
The resistance circuit of circuit and temperature sensor variation.
Compared with prior art, the beneficial effects of the present invention are: the present invention using 17-4PH stainless steel as chip base,
Integrated circuit is directly produced on the upper surface of stainless steel diaphragm, and pressure medium acts directly on the lower surface of stainless steel diaphragm.By
There is good heating conduction in stainless steel, therefore heat when integrated circuit operation can be spread in time, can effectively extend production
The product service life, while temperature rise when work can be effectively reduced, precision bring is adversely affected；Due to not using silicon as chip
Substrate does not use traditional oil-filled or barbola work yet, therefore the not temperature characterisitic of silicon semiconductor and no isolation transition material
Material, so that the temperature drift of product is small, zero point output can reach≤0.005%FS/ DEG C, and the operating temperature range of product is wide, and chip can
The reliably working under -55 DEG C~300 DEG C temperature environments；
Diaphragm is continued to subtract by the present invention on the basis of diaphragm of 0.2mm thickness using the semiconductor reduction process after improvement
It is as thin as 0.05mm, by measuring and calculating, the range of chip down to 0.05MPa, can greatly expand the range section of chip varistor, expand
Use scope of the film chip varistor in fields such as liquid level, low pressures；
The present invention is integrated with the temperature sensitive circuit of temperature sensor variation in strained layer, can directly measure in pressure pipeline temperature or
Environment temperature.Since temperature sensitive circuit is directly produced on stainless steel elastomer film on piece, the temperature in pressure pipeline can be by not
Rust steel elastomer is directly conducted to temperature sensitive circuit.Therefore, the present invention can be measured accurately in pressure pipeline while pressure measurement
Temperature, temperature measurement do not postpone, and can measure temperature change rapidly；Do not need to be mounted on using modes such as screws duct wall or
Aperture installation, has the advantages that easy for installation, the operation is stable, long product lifecycle；Pressure-sensitive circuit and temperature sensitive circuit integration system
Make, can effectively reduce production cost, reduces small product size.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention.
In figure: 1 elastomer matrix, 2 isolated layer films, 3 strain layer films, 4 lead layer films, 5 protection layer films.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution: a kind of high-performance wide-range band pressure-sensitive core of temperature sensitive type film
Piece, including elastomer matrix 1, it is thin that the top of the elastomer matrix 1 successively sputters isolated layer film 2, strained layer from the bottom up
The top sputtering of film 3 and lead layer film 4, the lead layer film 4 has dust-proof anti-oxidation protection layer film 5, and protective layer
The outside that film 5 is wrapped in isolated layer film 2, strains layer film 3 and lead layer film 4.
Wherein, the elastomer matrix 1 is 17-4PH stainless steel material, is hollowed out stainless steel bars bottom using machining
At cup-shaped, further according to range requirement, the flexible sheet of different-thickness is formed in bottom of a cup, the flexible sheet will using reduction process
It is thinned to 0.05mm to 1mm, and the lead layer film 4 is photo-etched into electrode using the method for photoetching, and the strained layer is thin
Film 3 is photo-etched into the Hui Sideng bridge circuit of senses change in pressure and the resistance electricity of temperature sensor variation using the method for photoetching
Road.
Working principle: the present invention using when be generally packaged into pressure sensor, will pacify containing pressure sensor of the invention
On pressure piping, chip is passed through 5~10 volts of DC voltages, when no pressure inputs on pressure piping, elastomer matrix 1
Deformation occurs, the Hui Sideng bridge balance being produced in elastomer matrix 1, and chip output voltage is 0mV, defeated with pressure
Enter and rise, elastic deformation, the Hui Sideng electric bridge disequilibrium being produced in elastomer matrix 1, core occur for elastomer matrix 1
Piece exports 0~20mV or so the voltage value linear with pressure, realizes the accurate measurement to pressure.In addition, due to chip
Be integrated with temperature measurement function, when the temperature in pressure piping changes, temperature sensor variation resistance formed with
The accurate measurement to temperature is realized in the corresponding variation of temperature.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of high-performance wide-range band temperature sensitive type film chip varistor, including elastomer matrix (1), it is characterised in that: described
The top of elastomer matrix (1) successively sputters isolated layer film (2), strain layer film (3) and lead layer film from the bottom up
(4), the top sputtering of the lead layer film (4) has dust-proof anti-oxidation protection layer film (5), and protects layer film (5) packet
The outside for being rolled in isolated layer film (2), straining layer film (3) and lead layer film (4).
2. a kind of high-performance wide-range band temperature sensitive type film chip varistor according to claim 1, it is characterised in that: described
Elastomer matrix (1) is 17-4PH stainless steel material, stainless steel bars bottom is hollowed out into cup-shaped using machining, further according to amount
Range request forms the flexible sheet of different-thickness in bottom of a cup.
3. a kind of high-performance wide-range band temperature sensitive type film chip varistor according to claim 2, it is characterised in that: described
Flexible sheet is thinned to 0.05mm to 1mm using reduction process.
4. a kind of high-performance wide-range band temperature sensitive type film chip varistor according to claim 1, it is characterised in that: described
Lead layer film (4) is photo-etched into electrode using the method for photoetching.
5. a kind of high-performance wide-range band temperature sensitive type film chip varistor according to claim 1, it is characterised in that: described
Strain layer film (3) is photo-etched into the Hui Sideng bridge circuit of senses change in pressure using the method for photoetching and temperature sensor becomes
The resistance circuit of change.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711500207.5A CN109994596A (en) | 2017-12-30 | 2017-12-30 | A kind of high-performance wide-range band temperature sensitive type film chip varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711500207.5A CN109994596A (en) | 2017-12-30 | 2017-12-30 | A kind of high-performance wide-range band temperature sensitive type film chip varistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109994596A true CN109994596A (en) | 2019-07-09 |
Family
ID=67111227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711500207.5A Pending CN109994596A (en) | 2017-12-30 | 2017-12-30 | A kind of high-performance wide-range band temperature sensitive type film chip varistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109994596A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112720082A (en) * | 2020-12-26 | 2021-04-30 | 湖南启泰传感科技有限公司 | Grinding and polishing process for metal-based film pressure-sensitive chip |
| CN117191235A (en) * | 2023-09-22 | 2023-12-08 | 松诺盟科技有限公司 | Steel-based nano-film pressure core with high insulating strength and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090139340A1 (en) * | 2007-12-04 | 2009-06-04 | King William P | Microcantilever Heater-Thermometer With Integrated Temperature-Compensated Strain Sensor |
| CN203490009U (en) * | 2013-09-09 | 2014-03-19 | 陕西电器研究所 | Low-range sputtered thin film type force transducer |
| CN106595913A (en) * | 2016-10-26 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Silicon piezoresistive pressure sensor with temperature control function |
| CN206362468U (en) * | 2016-12-16 | 2017-07-28 | 陕西电器研究所 | High sensitivity thin-film pressure sensor |
| CN107402031A (en) * | 2017-06-19 | 2017-11-28 | 中北大学 | Temperature, pressure biparameter sensor and preparation method based on microwave scattering principle |
-
2017
- 2017-12-30 CN CN201711500207.5A patent/CN109994596A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090139340A1 (en) * | 2007-12-04 | 2009-06-04 | King William P | Microcantilever Heater-Thermometer With Integrated Temperature-Compensated Strain Sensor |
| CN203490009U (en) * | 2013-09-09 | 2014-03-19 | 陕西电器研究所 | Low-range sputtered thin film type force transducer |
| CN106595913A (en) * | 2016-10-26 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Silicon piezoresistive pressure sensor with temperature control function |
| CN206362468U (en) * | 2016-12-16 | 2017-07-28 | 陕西电器研究所 | High sensitivity thin-film pressure sensor |
| CN107402031A (en) * | 2017-06-19 | 2017-11-28 | 中北大学 | Temperature, pressure biparameter sensor and preparation method based on microwave scattering principle |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112720082A (en) * | 2020-12-26 | 2021-04-30 | 湖南启泰传感科技有限公司 | Grinding and polishing process for metal-based film pressure-sensitive chip |
| CN112720082B (en) * | 2020-12-26 | 2022-05-31 | 湖南启泰传感科技有限公司 | Grinding and polishing process for metal-based film pressure-sensitive chip |
| CN117191235A (en) * | 2023-09-22 | 2023-12-08 | 松诺盟科技有限公司 | Steel-based nano-film pressure core with high insulating strength and preparation method thereof |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190709 |
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| WD01 | Invention patent application deemed withdrawn after publication |