CN107402031A - Temperature, pressure biparameter sensor and preparation method based on microwave scattering principle - Google Patents
Temperature, pressure biparameter sensor and preparation method based on microwave scattering principle Download PDFInfo
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- CN107402031A CN107402031A CN201710465116.6A CN201710465116A CN107402031A CN 107402031 A CN107402031 A CN 107402031A CN 201710465116 A CN201710465116 A CN 201710465116A CN 107402031 A CN107402031 A CN 107402031A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/48—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using wave or particle radiation means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/25—Measuring force or stress, in general using wave or particle radiation, e.g. X-rays, microwaves, neutrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
- H01P3/121—Hollow waveguides integrated in a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/18—Resonant slot antennas the slot being backed by, or formed in boundary wall of, a resonant cavity ; Open cavity antennas
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to temperature and pressure transmitter technical field, it is proposed that a kind of temperature, pressure biparameter sensor based on microwave scattering measuring principle and preparation method thereof.The sensor includes substrate integration wave-guide, the first slot antenna and the second slot antenna；Substrate integration wave-guide includes dielectric substrate, and upper surface metal level, lower surface metal layer, multiple first metal throuth holes, multiple second metal throuth holes and the circular cavity being arranged on dielectric substrate；Dielectric substrate, upper surface metal level, lower surface metal layer, multiple first metal throuth holes, cavity and the first slot antenna form pressure parameter measurement part；Dielectric substrate, upper surface metal level, lower surface metal layer, multiple second metal throuth holes and the second slot antenna form temperature parameter measurement part.Sensor construction proposed by the present invention is reasonable in design, and manufacturing process is easy, and high sensitivity, stability are good, can be worked long hours under the adverse circumstances such as HTHP.
Description
Technical field
The present invention relates to high temp sensitive field, be specially it is a kind of be applied under hot environment (>800oBeing dissipated based on microwave C)
Penetrate passive temperature/pressure double parameter sensor of the substrate integrated wave guide structure of signal-obtaining technology and preparation method thereof.
Background technology
Exploitation, design evaluation and the performance monitoring of aero-engine and industrial gas turbines are to influence Aero-Space work
An important factor for industry develops, wherein engine efficiency and power output are the most important parameters for influenceing aero-engine performance.Hair
Two parameters of motivation combustion chambers burn temperature and engine pressure ratio are an important factor for determining engine efficiency and power output.
Most important and most hot region-combustion chamber and pressure turbine, temperature highest can reach 2000K in engine.Temperature is straight
Connect the operating efficiency for influenceing engine and the service life of component.Enter because moment sensor can not be placed on temperature highest region
Row directly monitors, then its internal environment carries out calculating that collection obtains mainly by externally measured using model and hypothesis.Vapour
Take turns machine part and other heating parts are expensive, and due to larger mechanical load and thermic load, service life is short, but its
Normal work is run most important to engine reliable.Temperature parameter is accurately obtained for prediction unit service life and checking
The performance of design is significant.Other aerodynamic parameters, affected for example as dynamic and static pressure and impeller clearance
Engine operating efficiency, operation and health status.Wherein dynamic pressure needs real-time and accurately to measure, to ensure engine
Mechanical integrity.
European virtual gas turbine instrument research institute (European Virtual Institute for Gas Turbine
Instrumentation, EVI GTI) it is determined that three fields lack enough apparatus measures abilities, hinder gas turbine hair
Motivation develops or causes the uncertain increase in design method and assembly life-span prediction：Under hyperthermal environments (>1000 °C) gas
The measurement of temperature, pressure；The measurement of internal engine temperature highest zone part temperatures；The component vibration of superelevation temperature area is surveyed
Amount.EVI GTI also determine the weak point in terms of the sensor technology of current obstruction development of engine：Moment sensor can not
Applied on superhigh temperature part or can not meeting testing requirement in the stipulated time；Existing sensor can not meet gas turbine
Monitored for a long time on high-temperature component in machine；The measurement result degree of accuracy is not on high-temperature component in combustion gas turbine for existing sensor
It is enough.
Wireless and passive sensing technology mainly includes capacitance-inductance (LC) sensor technology, the sound surface of near-field coupling at present
Ripple (acoustic surface wave, SAW) sensing technology, and microwave backscattering（RF Backscattering）Signal is read
Take technology.There is simple in construction, test robustness using capacitance-inductance (LC) resonant transducer of near field magnetic coupling technology
Height, but have that quality factor is relatively low, reads that distance is near, can not attach the shortcomings of metal surface；Surface acoustic wave sensor
Phase transformation and chemical instability at high temperature be present in LGS (LGS) substrate used, test signal easily by environmental disturbances,
LGS substrates have obvious acoustic loss in radio frequency band, cause its working frequency to be difficult to reach more than 1GHz, so as to cause required day
Line volume is huge etc..
By contrast, microwave back-scattered signal reads technology due to penetrability, little interference by environment, anti-low frequency
The characteristics such as interference, it is combined with high q-factor microwave device, and normal signal reading is can still provide under high-temperature severe environment, is one
The technology that kind has a high potential towards engine interior test.
The content of the invention
The present invention deposits to solve existing sensor under the adverse circumstances such as high temperature, high pressure in temperature and pressure parameter measurement
The problem of, there is provided it is a kind of can under hot environment temperature and pressure parameter carry out accurate measurement based on microwave scattering
Temperature, pressure biparameter sensor.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：One kind is based on microwave scattering measuring principle
Temperature, pressure biparameter sensor, including substrate integration wave-guide and the first slot antenna for being arranged on substrate integration wave-guide and
Second slot antenna；The substrate integration wave-guide includes dielectric substrate, upper surface metal level, lower surface metal layer, multiple first
Metal throuth hole, multiple second metal throuth holes and circular cavity；The upper surface metal level and lower surface metal layer are separately positioned on
In the upper and lower surface of dielectric substrate, first metal throuth hole and second metal throuth hole are arranged on the medium base
On piece and run through its upper and lower surface；The cavity is arranged on inside the dielectric substrate, and positioned at the multiple first
Inside the region that metal throuth hole surrounds；First slot antenna is located on substrate integration wave-guide surface, and is arranged on multiple institutes
State in the region that the first metal throuth hole surrounds, second slot antenna is located on substrate integration wave-guide surface, and is arranged on more
In the region that individual second metal throuth hole surrounds；The dielectric substrate, upper surface metal level, lower surface metal layer, Duo Ge
One metal throuth hole, cavity and the first slot antenna form pressure parameter measurement part；The dielectric substrate, upper surface metal level,
Lower surface metal layer, multiple second metal throuth holes and the second slot antenna form temperature parameter measurement part.
The upper surface metal level and the material of lower surface metal layer are platinum, and first metal throuth hole and the second metal lead to
Packing material in hole is platinum.
The multiple first metal throuth hole is uniformly arranged on the same circumference homocentric with the cavity, and the multiple
Two metal throuth holes are also uniformly arranged on another disjoint circumference.
The dielectric substrate is made of HTCC HTCC materials.
The invention also provides a kind of described temperature, pressure biparameter sensor based on microwave scattering measuring principle
Preparation method, comprise the following steps：
（1）First, the HTCC ceramic chips of 5 identical sizes are got out, cut off a manhole on a piece of ceramic chips wherein
Cavity is formed, then carbon film is filled into cavity；
（2）The ceramic chips that will be filled with carbon film are placed on centre position, and other 4 ceramic chips are placed on the ceramic chips two-by-two respectively
Both sides up and down, monolithic ceramic chips are pressed into by way of lamination, the first metal throuth hole is then corresponded on monolithic ceramic chips
Position dig out via, also dig out via in the position corresponding to the second metal throuth hole；
（3）The is avoided by the upper metal platinum slurry of the upper and lower surfaces of the monolithic ceramic chips being laminated printing, during type metal platinum slurry
One slot antenna and the second slot antenna position, metal platinum slurry is filled to via and forms the first metal throuth hole and the second gold medal
Belong to through hole；
（4）The ceramic chips printed and filling finishes are placed in 1400 DEG C~1550 DEG C high temperature sinterings of progress in high temperature furnace, obtain temperature
Spend pressure double parameter sensor.
The step（2）In, the lamination is specifically referred to after 5 HTCC ceramic chips alignment is folded, 75oC's
Temperature and 15MPa pressure environment depress to monolithic ceramic chips.
The present invention has the advantages that compared with prior art：
1st, the present invention enters the integrated progress wireless signal reading of slot antenna and microwave cavity, temperature and pressure parameter
Row single sheet measurement, reduces overall sensor size, in addition, pressure sensor can have temperature drift phenomenon, sensor of the invention
Measured temperature parameter can be that the accurate measurement of pressure parameter provides safeguard.Therefore based on the wireless of above-mentioned microwave scattering principle
Passive temperature pressure double parameter sensor, there is good application prospect in temperature and pressure measurement at high temperature.
2nd, sensor of the invention is reasonable in design, and manufacturing process is easy, and its high sensitivity, stability are good, medium base
Piece is made of HTCC HTCC, and it can adapt to hot environment, and therefore, sensor of the invention can be in HTHP
Etc. being worked long hours under adverse circumstances.
Brief description of the drawings
Fig. 1 is a kind of top view of temperature, pressure biparameter sensor based on microwave scattering measuring principle of the present invention；
Fig. 2 is a kind of upward view of the temperature, pressure biparameter sensor based on microwave scattering measuring principle of the present invention；
Fig. 3 is Fig. 1 A-A sectional views；
Fig. 4 is Fig. 1 B-B sectional views；
Fig. 5 is Fig. 1 C-C sectional views；
Fig. 6 is a kind of process signal of temperature, pressure biparameter sensor based on microwave scattering measuring principle of the present invention
Figure；
Fig. 7 is the microwave scattering test philosophy figure of the present invention；
In figure：1 is the first slot antenna, and 2 be the second slot antenna, and 3 be substrate integration wave-guide, and 4 be dielectric substrate, and 5 be upper table
Face metal level, 6 be lower surface metal layer, and 7 be the first metal throuth hole, and 8 be the second metal throuth hole, and 9 be cavity, and 10 ~ 14 be HTCC
Ceramic chips, 15 be carbon film, and 18 be interrogation antenna；19 be frequency sweep transmission signal；20- sensors；21- echo reflection signals.
Embodiment
, below will be in the embodiment of the present invention to make the purpose, technical scheme and advantage of the embodiment of the present invention clearer
Technical scheme be clearly and completely described, it is clear that described embodiment be the present invention part of the embodiment, without
It is whole embodiments；Based on the embodiment in the present invention, those of ordinary skill in the art are not before creative work is made
The every other embodiment obtained is put, belongs to the scope of protection of the invention.
As shown in Fig. 1 ~ 3, the present invention proposes a kind of two-parameter sensing of the temperature, pressure based on microwave scattering measuring principle
Device, including substrate integration wave-guide 3 and the first slot antenna 1 and the second slot antenna 2 that are arranged on substrate integration wave-guide 3；Institute
Stating substrate integration wave-guide includes dielectric substrate 4, upper surface metal level 5, lower surface metal layer 6, multiple first metal throuth holes 7, more
Individual second metal throuth hole 8 and circular cavity 9；The upper surface metal level 5 and lower surface metal layer 6 are separately positioned on dielectric substrate
In 4 upper and lower surface, first metal throuth hole 7 and second metal throuth hole 8 are arranged on the dielectric substrate
Between upper and lower surface；The cavity 9 is arranged on inside the dielectric substrate 4, and is led to positioned at the multiple first metal
Inside the region that hole 7 surrounds；First slot antenna 1 is located on the surface of substrate integration wave-guide 3, and is arranged on multiple described
In the region that one metal throuth hole 7 surrounds, second slot antenna 2 is located on the surface of substrate integration wave-guide 3, and is arranged on multiple
In the region that second metal throuth hole 8 surrounds；Wherein, the dielectric substrate 4, upper surface metal level 5, lower surface metal layer 6,
Multiple first metal throuth holes 7, the slot antenna 1 of cavity 9 and first form pressure parameter measurement part；The dielectric substrate 4, upper table
Face metal level 5, lower surface metal layer 6, the slot antenna 2 of multiple second metal throuth holes 7 and second form temperature parameter measurement portion
Point.Wherein, pressure parameter measurement part measures part-structure with temperature parameter and size is completely the same, differs only in pressure ginseng
Number measurement part has a circular cavity 9.
Wherein, in the embodiment of the present invention, the material of the upper surface metal level 5 and lower surface metal layer 6 is platinum, described
Packing material in one metal throuth hole 7 and the second metal throuth hole 8 is platinum.
Further, the multiple first metal throuth hole 7 is uniformly arranged on the same circumference homocentric with the cavity 9
On, the multiple second metal throuth hole 8 is also uniformly arranged on the circumference of another disjoint grade radius.
In the embodiment of the present invention, the temperature, pressure biparameter sensor based on microwave scattering measuring principle uses high temperature co-firing
Ceramics（HTCC）Technology is process, and process is as shown in fig. 6, specifically include following steps：
（1）First, the HTCC ceramic chips of 5 identical sizes are got out, are respectively labeled as 10 ~ 14, wherein a piece of ceramic chips 12
Upper one border circular areas of excision forms pressure cavities 9, and then carbon film 15 is filled into the cavity, as shown in Figure 6 a, prevents from giving birth to
Softening cavity collapses when ceramics sinters；
（2）The ceramic chips 12 that will be filled with carbon film are placed on centre position, and other 4 ceramic chips are placed on the green two-by-two respectively
The both sides up and down of piece, are pressed into monolithic ceramic chips by way of lamination, then lead on monolithic ceramic chips corresponding to the first metal
Via is dug out in the position in hole, also digs out via in the position corresponding to the second metal throuth hole, as shown in Figure 6 b；
（3）Except the first slot antenna and the second slot antenna position, the upper and lower surface for the monolithic ceramic chips being laminated is printed
Upper metal platinum slurry, metal platinum slurry is filled to via and forms the first metal throuth hole and the second metal throuth hole, as fig. 6 c；
（4）The ceramic chips printed and filling finishes are placed in 1400 DEG C~1550 DEG C high temperature sinterings of progress in high temperature furnace, obtain temperature
Pressure double parameter sensor is spent, as shown in fig 6d.
Wherein, the lamination refers under heating, pressurization the processing and forming that multi-layer phase is same or different materials combination is overall
Method.In the present embodiment, the lamination is specifically referred to after 5 HTCC ceramic chips alignment is folded, 75oC temperature
Monolithic ceramic chips are depressed to 15MPa pressure environment.
As shown in fig. 7, the work of the temperature, pressure biparameter sensor based on microwave scattering measuring principle for the present invention
Schematic diagram, during work, interrogation antenna（Ultra-wideband antenna comprising coplanar wave guide feedback, open circuit radiating guide etc.）18 send and include
Swept-frequency signal 19 including sensor resonant frequency, by the slot antenna 1 of substrate integration wave-guide upper surface 3 and the institute of slot antenna 2
Receiving, signal is coupled into the substrate integration wave-guide of pressure measxurement and temperature survey by slot aerial 1 and slot antenna 2 respectively,
The signal of wherein proximity transducer frequency vibrates and absorbed in substrate integration wave-guide, and other parts frequency signal 21 then by
Reflect away, be asked antenna 18 and received, can be sensed by the S (1,1) or S (2,1) parameter that analyze interrogation antenna
The frequency values of device.When ambient pressure increase, cavity deforms upon, and causes the center of the substrate integration wave-guide of pressure sensitive portion
Frequency changes, and echo-signal S (1, the 1) valley value being reflected back, or S (2,1) peak frequencies value are also increased monotonically therewith, therefore can
To speculate the size of ambient pressure by analyzing S (1,1) valley value, or S (2,1) crest value frequency.When temperature changes
When, the dielectric constant of dielectric material changes, the centre frequency change of substrate integration wave-guide, the echo-signal S being reflected back (1,
1) valley value, or S (2,1) peak frequencies value are also increased monotonically therewith, thus can by analyzing S (1,1) valley value, or S (2,
1) crest value frequency speculates the size of ambient temperature, and then the pressure value that the Pressure sensing part to temperature drift phenomenon be present measures
It is modified.
The temperature, pressure biparameter sensor based on microwave scattering measuring principle of the present invention, slot antenna is humorous with microwave
The chamber that shakes is integrated to carry out wireless signal reading, and temperature and pressure parameter carries out single sheet measurement, reduces sensor entirety chi
Very little, in addition, pressure sensor can have temperature drift phenomenon, measured temperature parameter can provide guarantor for the accurate measurement of pressure parameter
Barrier.Therefore the wireless and passive temperature, pressure biparameter sensor based on microwave scattering principle of the present invention, temperature at high temperature
And have good application prospect in pressure measxurement；In addition, reasonable in design, manufacturing process is easy, high sensitivity, stability
It is good, it can be worked long hours under the adverse circumstances such as HTHP.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (6)
1. a kind of temperature, pressure biparameter sensor based on microwave scattering measuring principle, it is characterised in that integrated including substrate
Waveguide（3）Be arranged on substrate integration wave-guide（3）On the first slot antenna（1）With the second slot antenna（2）；The substrate collection
Include dielectric substrate into waveguide（4）, upper surface metal level（5）, lower surface metal layer（6）, multiple first metal throuth holes（7）, it is more
Individual second metal throuth hole（8）And circular cavity（9）；
The upper surface metal level（5）And lower surface metal layer（6）It is separately positioned on dielectric substrate（4）Upper and lower surface
On, first metal throuth hole（7）With second metal throuth hole（8）It is arranged on the dielectric substrate and runs through its upper surface
And lower surface；The cavity（9）It is arranged on the dielectric substrate（4）Inside, and it is located at the multiple first metal throuth hole（7）Enclose
Into region inside；First slot antenna（1）Positioned at substrate integration wave-guide（3）On surface, and it is arranged on multiple described
One metal throuth hole（7）In the region surrounded, second slot antenna（2）Positioned at substrate integration wave-guide（3）On surface, and set
In multiple second metal throuth holes（8）In the region surrounded；
The dielectric substrate（4）, upper surface metal level（5）, lower surface metal layer（6）, multiple first metal throuth holes（7）, cavity
（9）With the first slot antenna（1）Form pressure parameter measurement part；The dielectric substrate（4）, upper surface metal level（5）, following table
Face metal level（6）, multiple second metal throuth holes（7）And second slot antenna（2）Form temperature parameter measurement part.
2. a kind of temperature, pressure biparameter sensor based on microwave scattering measuring principle according to claim 1, it is special
Sign is, the upper surface metal level（5）And lower surface metal layer（6）Material be platinum, first metal throuth hole（7）With
Two metal throuth holes（8）Interior packing material is platinum.
3. a kind of temperature, pressure biparameter sensor based on microwave scattering measuring principle according to claim 1, it is special
Sign is, the multiple first metal throuth hole（7）It is uniformly arranged on and the cavity（9）It is described on homocentric same circumference
Multiple second metal throuth holes（8）Also it is uniformly arranged on another disjoint circumference.
4. a kind of temperature, pressure biparameter sensor based on microwave scattering measuring principle according to claim 1, it is special
Sign is that the dielectric substrate is made of HTCC HTCC materials.
A kind of 5. preparation of temperature, pressure biparameter sensor based on microwave scattering measuring principle according to claim 1
Method, it is characterised in that comprise the following steps：
（1）First, the HTCC ceramic chips of 5 identical sizes are got out, cut off a manhole on a piece of ceramic chips wherein
Cavity is formed, then carbon film is filled into cavity；
（2）The ceramic chips that will be filled with carbon film are placed on centre position, and other 4 ceramic chips are placed on the ceramic chips two-by-two respectively
Both sides up and down, monolithic ceramic chips are pressed into by way of lamination, the first metal throuth hole is then corresponded on monolithic ceramic chips
Position dig out via, also dig out via in the position corresponding to the second metal throuth hole；
（3）The is avoided by the upper metal platinum slurry of the upper and lower surfaces of the monolithic ceramic chips being laminated printing, during type metal platinum slurry
One slot antenna and the second slot antenna position, metal platinum slurry is filled to via and forms the first metal throuth hole and the second gold medal
Belong to through hole；
（4）The ceramic chips printed and filling finishes are placed in 1400 DEG C~1550 DEG C high temperature sinterings of progress in high temperature furnace, obtain temperature
Spend pressure double parameter sensor.
A kind of 6. preparation of temperature, pressure biparameter sensor based on microwave scattering measuring principle according to claim 3
Method, it is characterised in that the step（2）In, the lamination is specifically referred to after 5 HTCC ceramic chips alignment is folded,
75oC temperature and 15MPa pressure environment depress to monolithic ceramic chips.
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| CN201710465116.6A CN107402031A (en) | 2017-06-19 | 2017-06-19 | Temperature, pressure biparameter sensor and preparation method based on microwave scattering principle |
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| CN201710465116.6A CN107402031A (en) | 2017-06-19 | 2017-06-19 | Temperature, pressure biparameter sensor and preparation method based on microwave scattering principle |
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| CN108036881A (en) * | 2017-12-19 | 2018-05-15 | 厦门大学 | A kind of SiCN ceramics wireless and passive pressure sensor and preparation method thereof |
| CN108975920A (en) * | 2018-03-12 | 2018-12-11 | 中北大学 | A kind of high-temperature heat flux sensor and preparation method thereof based on HTCC |
| CN109994596A (en) * | 2017-12-30 | 2019-07-09 | 湖南启泰传感科技有限公司 | A kind of high-performance wide-range band temperature sensitive type film chip varistor |
| CN110112579A (en) * | 2019-05-10 | 2019-08-09 | 电子科技大学 | A kind of back cavity type double frequency common reflector based on structure multiplexing |
| CN110672222A (en) * | 2019-10-09 | 2020-01-10 | 天津大学 | Dielectric resonator type temperature sensor for high-temperature measurement |
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| CN114142193A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Dual-mode high-reliability silicon-based filter and manufacturing method thereof |
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