CN107040234A - A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector - Google Patents
A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector Download PDFInfo
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- CN107040234A CN107040234A CN201610075248.3A CN201610075248A CN107040234A CN 107040234 A CN107040234 A CN 107040234A CN 201610075248 A CN201610075248 A CN 201610075248A CN 107040234 A CN107040234 A CN 107040234A
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- transducer
- interdigital transducer
- grating array
- wavelength
- interdigital
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 238000001465 metallisation Methods 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 4
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- CAAULPUQFIIOTL-UHFFFAOYSA-L methyl phosphate(2-) Chemical group COP([O-])([O-])=O CAAULPUQFIIOTL-UHFFFAOYSA-L 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002463 transducing effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2473—Double-Ended Tuning Fork [DETF] resonators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/022—Liquids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0423—Surface waves, e.g. Rayleigh waves, Love waves
Abstract
The present invention relates to a kind of both-end to resonant mode surface acoustic wave detector, including being produced on the both-end on substrate (1) to resonator, the second interdigital transducer (3) is provided with substrate (1), in the both sides of the second interdigital transducer (3), the first interdigital transducer (2) and third fork finger transducer (4) are set respectively, second interdigital transducer (3) and the first interdigital transducer (2) formation interval (7), the second interdigital transducer (3) and third fork finger transducer (4) formation interval (8)；The opposite side of first interdigital transducer (2) is provided with the first metallic reflection grating array (5), the opposite side of third fork finger transducer (4) is provided with the second metallic reflection grating array (6)；Wherein, interval (7) is equal with interval (8), and 0-3.5 times of the wavelength for above-mentioned interdigital transducer.
Description
Technical field
The present invention relates to a kind of surface acoustic wave detector, more particularly to a kind of high sensitivity for sensor
Both-end to resonant mode surface acoustic wave detector.
Background technology
Surface acoustic wave (SAW) detector is used as the frequency controlling elements of SAW oscillator, its performance
Directly affect the frequency stability of oscillator.According to the frequency stability principle of SAW oscillator, sound
The quality factor (Q values) and insertion loss size of rayleigh waves inspection device directly influence the short-term of oscillator
Frequency stability, Q values are higher, insertion loss is lower, then the short-term frequency stability of oscillator is higher,
And the frequency stability of SAW oscillator directly affects the Monitoring lower-cuts of SAW gas sensors and quick
Sensitivity.The device architecture of usual surface acoustic wave detector substantially has two kinds, and one kind is SAW delay lines, separately
Outer one kind is SAW resonator.For delay-line structure, easily providing larger region is used to apply
Sensitive membrane, but the device loss of this structure is larger, and the frequency stability of oscillator is influenceed indirectly；SAW
Resonator has high-quality-factor and low-loss feature, and the oscillator being made up of it as frequency control element holds
Easy starting of oscillation, but resonator is difficult to provide the region required for sensitive membrane film forming, for being not required to make chemical films
Sensing terminal, with greater advantage.Exactly one kind of the present invention is applied to be not required to make chemical films
Sensor both-end to resonant mode membrane structure-borne noise surface wave detector, hereinafter referred to as both-end is to resonator.
In both-end in resonator, due to using resonance structure, reflecting grating array is placed at the two ends of transducer,
Resonator is formed, sound wave is limited in resonator, two-way loss is minimum, therefore very low insert can be obtained
Enter loss, be conducive to improving the frequency stability of oscillator.But, prior art is in order to increase resonator
Sensitizing range, the spacing between the interdigital transducer of resonator is set into wider (be more than ten wavelength),
Therefore cause resonator longer, Energy distribution region is big in such resonator, not enough concentrate.To micro
When determinand is detected, determinand is mainly distributed on the center of resonator sensitizing range, and existing length
The Energy distribution feature of resonator so that energy can not concentrate on resonator central, cause central area
Susceptibility is not high enough, it is difficult to which micro determinand is accurately detected.
The content of the invention
It is an object of the present invention to solve the above mentioned problem of prior art presence.
To achieve these goals, resonant mode surface acoustic wave is examined the embodiments of the invention provide a kind of both-end
Device is surveyed, including the both-end being produced on substrate is to resonator, second is provided with substrate and interdigital is changed
Energy device, sets the first interdigital transducer and third fork to refer to transducing respectively in the both sides of the second interdigital transducer
Device, the second interdigital transducer and the first interdigital transducer formation interval, the second interdigital transducer and the 3rd
Interdigital transducer formation interval；The opposite side of first interdigital transducer is provided with the first metallic reflection grid
Battle array, the second metallic reflection grating array is provided with the opposite side of third fork finger transducer.
First interdigital transducer, the second interdigital transducer are identical with the synchronizing frequency of third fork finger transducer.
Interval and the second interdigital transducer of second interdigital transducer and the formation of the first interdigital transducer and the
The interval of three interdigital transducers formation is equal, and interdigital is changed for the wavelength of the first interdigital transducer, second
0-3.5 times of the wavelength of energy device or the wavelength of third fork finger transducer, wherein, synchronizing frequency and wavelength
Relation be：V is that the velocity of sound in material, f are synchronizing frequency and λ is wavelength in v=λ × f, formula.
Preferably, the first interdigital transducer, the second interdigital transducer, third fork finger transducer, first
Metallic reflection grating array, the metallization of the second metallic reflection grating array are metallized than being 0.1-0.6 than equal.
First metallic reflection grating array and the second interdigital transducer formation interval, the second metallic reflection grating array and the
Three interdigital transducers formation interval；Preferably, the first metallic reflection grating array and the second interdigital transducer are formed
Interval it is equal with the interval that third fork finger transducer is formed with the second metallic reflection grating array, and be first pitch
The wavelength of the wavelength of finger transducer, the wavelength of the second interdigital transducer or third fork finger transducer
0.25-2.5 times.
Preferably, substrate is 36 ° of YX-LiTaO3Substrate, 42 ° of YX-LiTaO3Substrate, ST-X quartz
Substrate, 64 ° of YX-LiNbO3Substrate and 41 ° of YX-LiNbO3One kind in substrate.
Preferably, the synchronizing frequency of the first metallic reflection grating array and the second metallic reflection grating array is identical.
Preferably, the synchronization of the first interdigital transducer, the second interdigital transducer or third fork finger transducer
Frequency is 0.95-1.05 times of the synchronizing frequency of the first metallic reflection grating array or the second metallic reflection grating array.
Preferably, the first interdigital transducer, the second interdigital transducer, third fork finger transducer, first
Metallic reflection grating array and the second metallic reflection grating array are not weighted.
The energy amplitude gap of two vertical patterns in the frequency response curve of above-mentioned surface acoustic wave detector
＞ 10dB, Q values ＞ 2000, insertion loss ＜ 6dB.
Both-end provided in an embodiment of the present invention shortens interdigital transducer to resonant mode surface acoustic wave detector
Between spacing, optimize the metallization ratio of interdigital transducer and metallic reflection grating array, shorten resonance
Chamber, makes the energy of resonator more concentrate, and improves the detection sensitivity of surface acoustic wave detector.
Brief description of the drawings
Fig. 1 is structural representation of the three transducer architectures both-end provided in an embodiment of the present invention to resonator.
Fig. 2 is that frequency response of the three transducer architectures both-end provided in an embodiment of the present invention to resonator is bent
Line.
Fig. 3 is frequency response curve of the existing three transducer architectures both-end to resonator.
Fig. 4 is that three transducer architectures both-end provided in an embodiment of the present invention is changed resonator and existing three
Energy device structure double end is to the test response results of resonator, and test sample is methyl-phosphoric acid dimethyl ester
(DMMP)。
Embodiment
Below by drawings and examples, technical scheme is described in further detail.Should
It is interpreted as the embodiment to be only used for specifically describing in more detail, but is not intended to the guarantor of the limitation present invention
Protect scope.
Fig. 1 is structural representation of the three transducer architectures both-end provided in an embodiment of the present invention to resonator.
As shown in figure 1, the both-end of the present embodiment is to resonant mode surface acoustic wave detector, including it is produced on substrate 1
On three transducer architecture both-ends to resonator.The three transducer architectures both-end is to resonator by one piece
ST-X quartz plates be arranged in parallel on the substrate 1 as substrate 1 (Euler angles are (0 °, 132.75 °, 0 °))
Conventional the first interdigital transducer 2, the second interdigital transducer 3 and third fork finger transducer 4, and in substrate
Two metallic reflection grating arrays (the first metallic reflection grating array 5 and the second metallic reflection grating array 6) are set on 1.
First metallic reflection grating array 5 is arranged on the outside of the first interdigital transducer 2, and with the first interdigital transducer 2
It is parallel；Second metallic reflection grating array 6 is arranged on the outside of third fork finger transducer 4, and refers to third fork and change
Energy device 4 is parallel.
First interdigital transducer 2, the second interdigital transducer 3, third fork finger transducer 4, the first metal are anti-
The metallic reflection grating array 6 of grating array 5 and second is penetrated not weight.
The synchronizing frequency phase of first interdigital transducer 2, the second interdigital transducer 3 and third fork finger transducer 4
Deng 2 metallic reflection grating array synchronizing frequencies are also equal, and the synchronizing frequency of interdigital transducer is metallic reflection
Grating array synchronizing frequency 0.95-1.05 times (can be with the scope of this, synchronizing frequency f and wavelength X
Relation is：V=λ × f, v are the velocity of sound in material).
Spacing between first interdigital transducer 2 and the second interdigital transducer 3, that is, be spaced the 7, and second fork
Spacing between finger transducer 3 and third fork finger transducer 4, that is, be spaced 8, equal, and is described first
The wavelength of interdigital transducer 2, the wavelength of second interdigital transducer 3 or the third fork refer to transducing
0-3.5 times (within the scope of this can with) of the wavelength of device 4.
Spacing between first metallic reflection grating array 5 and the first interdigital transducer 2, that is, be spaced 9, with
Spacing between two metallic reflection grating arrays 6 and third fork finger transducer 4, i.e. interval 10 are equal, and are institutes
State the wavelength, the wavelength of second interdigital transducer 3 or the third fork of the first interdigital transducer 2
0.25-2.5 times (within the scope of this can with) of the wavelength of finger transducer 4.
Because the spacing between reflectance factor of the metallization than directly affecting finger, transducer can change two
Frequency distance between individual vertical pattern, so in specific practical operation, should according to substrate material and
It is actually needed, the suitable metallization of selection is than the multiple with above-mentioned two synchronizing frequency, and adjacent interdigital changes
The spacing between spacing and reflecting grating array interdigital transducer adjacent thereto between energy device, to optimize resonator
Performance.
In the present embodiment, in order to improve sensitivity and the device Q values in detector centre region, obtain
Low-loss, and frequency spacing as big as possible between two-mode and rate gap are realized, so need contracting
Short oscillation cavity, and finger need to have larger reflectance factor, therefore its 3 interdigital transducers and 2 gold
Belong to the metallization ratio that reflecting grating array uses 0.3.The synchronizing frequency of interdigital transducer is reflecting grating array synchronizing band
Spacing between 1.003 times of rate, adjacent interdigital transducer is equal, i.e. interval 7 and interval 8 is equal, and
For 1.5 times of transducer wavelength.Between first reflecting grating array 5, first interdigital transducer 2 adjacent thereto
Spacing between spacing and the second reflecting grating array 6 third fork finger transducer 4 adjacent thereto is equal, to change
1.25 times of energy device wavelength.
Fig. 2 is that frequency response of the three transducer architectures both-end provided in an embodiment of the present invention to resonator is bent
Line.
As shown in Fig. 2 the three transducer architecture both-ends that the present embodiment is provided are to the centre frequency of resonator
512.6MHz, insertion loss is 3.8dB, and Q values are 2092.
Fig. 4 is that three transducer architectures both-end provided in an embodiment of the present invention is changed resonator and existing three
Test response results of the energy device structure double end to resonator.
Three transducer architectures both-end provided in an embodiment of the present invention is to resonator and existing three transducers knot
Structure both-end detects same determinand to resonator, and the determinand is methyl-phosphoric acid dimethyl ester (DMMP).
Testing result is as shown in Figure 4, it is seen that three transducer architectures both-end provided in an embodiment of the present invention is to resonance
The detection sensitivity of device is apparently higher than existing three transducer architectures both-end to resonator.
Both-end provided in an embodiment of the present invention shortens interdigital transducer to resonant mode surface acoustic wave detector
Between spacing, optimize the metallization ratio of interdigital transducer and metallic reflection grating array, shorten resonance
Chamber, makes the energy of resonator more concentrate, and improves the detection sensitivity of surface acoustic wave detector.
Above-described embodiment, is carried out to the purpose of the present invention, technical scheme and beneficial effect
Be further described, should be understood that the embodiment that the foregoing is only of the invention and
, the protection domain being not intended to limit the present invention, within the spirit and principles of the invention, is done
Any modification, equivalent substitution and improvements etc., should be included in the scope of the protection.
Claims (7)
1. a kind of both-end is to resonant mode surface acoustic wave detector, including is produced on double on substrate (1)
End is to resonator, it is characterised in that the second interdigital transducer (3) is provided with the substrate (1),
In the both sides of second interdigital transducer (3), the first interdigital transducer (2) and the 3rd are set respectively
Interdigital transducer (4), second interdigital transducer (3) and first interdigital transducer (2)
Form interval (7), second interdigital transducer (3) and the third fork finger transducer (4) shape
At interval (8)；The opposite side of first interdigital transducer (2) is provided with the first metallic reflection
Grating array (5), the second metallic reflection grid are provided with the opposite side of the third fork finger transducer (4)
Battle array (6)；Wherein,
First interdigital transducer (2), second interdigital transducer (3) and the third fork
The synchronizing frequency of finger transducer (4) is identical；
The interval (7) is equal with the interval (8), and is first interdigital transducer (2)
Wavelength, the wavelength of second interdigital transducer (3) or the third fork finger transducer (4)
0-3.5 times of wavelength, wherein, the synchronizing frequency and the relation of the wavelength are：In v=λ × f, formula
V is that the velocity of sound in material, f are the synchronizing frequency and λ is the wavelength.
2. surface acoustic wave detector according to claim 1, it is characterised in that first fork
Finger transducer (2), second interdigital transducer (3), the third fork finger transducer (4),
Phase is compared in the first metallic reflection grating array (5), the metallization of the second metallic reflection grating array (6)
Deng described to metallize than being 0.1-0.6.
3. surface acoustic wave detector according to claim 1, it is characterised in that first metal
Reflecting grating array (5) and second interdigital transducer (3) formation interval (9), second metal are anti-
Penetrate grating array (6) and form interval (10) with the third fork finger transducer (4)；
The interval (9) and the interval (10) are equal, and are first interdigital transducer (2)
Wavelength, the wavelength of second interdigital transducer (3) or the third fork finger transducer (4)
0.25-2.5 times of wavelength.
4. surface acoustic wave detector according to claim 1, it is characterised in that the substrate (1)
For 36 ° of YX-LiTaO3Substrate, 42 ° of YX-LiTaO3Substrate, ST-X quartz substrates, 64 ° of YX-LiNbO3
Substrate and 41 ° of YX-LiNbO3One kind in substrate.
5. surface acoustic wave detector according to claim 1, it is characterised in that first gold medal
Belong to reflecting grating array (5) identical with the synchronizing frequency of the second metallic reflection grating array (6)；
First interdigital transducer (2), second interdigital transducer (3) or the third fork
The synchronizing frequency of finger transducer (4) is the first metallic reflection grating array (5) or second metal
0.95-1.05 times of the synchronizing frequency of reflecting grating array (6).
6. surface acoustic wave detector according to claim 1, it is characterised in that first fork
Finger transducer (2), second interdigital transducer (3), the third fork finger transducer (4),
The first metallic reflection grating array (5) and the second metallic reflection grating array (6) do not weight.
7. the surface acoustic wave detector according to claim 1-6, it is characterised in that the sound table
Energy amplitude gap ＞ 10dB, the Q values of two vertical patterns in the frequency response curve of face ripple detector
＞ 2000, insertion loss ＜ 6dB.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610075248.3A CN107040234A (en) | 2016-02-03 | 2016-02-03 | A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector |
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| CN201610075248.3A CN107040234A (en) | 2016-02-03 | 2016-02-03 | A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector |
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| CN201610075248.3A Pending CN107040234A (en) | 2016-02-03 | 2016-02-03 | A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194302A (en) * | 2018-07-17 | 2019-01-11 | 中国科学院声学研究所 | A kind of three transducer by double-end of surface acoustic wave is to resonator |
| CN109374157A (en) * | 2018-09-14 | 2019-02-22 | 北京遥测技术研究所 | A kind of surface acoustic wave pressure sensor based on loss detection |
| CN110057910A (en) * | 2019-03-08 | 2019-07-26 | 天津大学 | Using the method for removable dual probe piezoelectric transducer measurement film adherability |
| CN111879853A (en) * | 2020-07-16 | 2020-11-03 | 中国科学院声学研究所 | Surface acoustic wave resonant detector of shear wave mode |
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| CN101865884A (en) * | 2009-11-24 | 2010-10-20 | 中国科学院声学研究所 | Single-mode protruding double-end resonant surface acoustic wave detector |
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| CN205647458U (en) * | 2016-02-03 | 2016-10-12 | 中国科学院声学研究所 | High sensitivity's bi -polar is to resonant mode surface acoustic wave detector |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194302A (en) * | 2018-07-17 | 2019-01-11 | 中国科学院声学研究所 | A kind of three transducer by double-end of surface acoustic wave is to resonator |
| CN109374157A (en) * | 2018-09-14 | 2019-02-22 | 北京遥测技术研究所 | A kind of surface acoustic wave pressure sensor based on loss detection |
| CN110057910A (en) * | 2019-03-08 | 2019-07-26 | 天津大学 | Using the method for removable dual probe piezoelectric transducer measurement film adherability |
| CN110057910B (en) * | 2019-03-08 | 2021-08-17 | 天津大学 | Method for measuring film adhesion by adopting movable double-probe piezoelectric sensor |
| CN111879853A (en) * | 2020-07-16 | 2020-11-03 | 中国科学院声学研究所 | Surface acoustic wave resonant detector of shear wave mode |
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