CN108933579B - Acoustic surface wave single-end-to-resonator - Google Patents
Acoustic surface wave single-end-to-resonator Download PDFInfo
- Publication number
- CN108933579B CN108933579B CN201810653646.8A CN201810653646A CN108933579B CN 108933579 B CN108933579 B CN 108933579B CN 201810653646 A CN201810653646 A CN 201810653646A CN 108933579 B CN108933579 B CN 108933579B
- Authority
- CN
- China
- Prior art keywords
- interdigital transducer
- sensitive film
- surface acoustic
- acoustic wave
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000012528 membrane Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 31
- 238000000151 deposition Methods 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a surface acoustic wave single-end-to-resonator, comprising: the device comprises a piezoelectric substrate, a first interdigital transducer, a first reflecting grating and a second reflecting grating; the first interdigital transducer is arranged on the piezoelectric substrate, the first reflection grating and the second reflection grating have the same structure, and are symmetrically arranged at two ends of the first interdigital transducer; further comprising: a sensitive film and a second interdigital transducer; the second interdigital transducer is arranged between the first reflection grating and the second reflection grating and is connected with the upper return strip and the lower return strip of the first interdigital transducer; the sensitive film is arranged at the middle position of the first interdigital transducer and the second interdigital transducer. According to the resonator, the interdigital transducer is added, so that the advantages of high quality factor and low loss of the resonator are guaranteed, and the detection sensitivity, consistency and stability of the sensor are improved. Meanwhile, a sensitive film is arranged between the two interdigital transducers, so that the problem of a film forming area of the sensitive film is solved, and the method is easily applied to the field of sensors.
Description
Technical Field
The invention relates to the field of surface acoustic wave devices, in particular to a surface acoustic wave single-end-to-resonator.
Background
The surface acoustic wave sensor is a new type of micro-acoustic sensor developed in recent years, and is a sensor which uses a surface acoustic wave device as a sensing element, reflects measured information through the change of the speed or frequency of the surface acoustic wave in the surface acoustic wave device, and converts the information into an electric signal for output. The surface acoustic wave sensor can accurately measure physical and chemical information (such as temperature, stress and gas density). Because of small volume, the surface acoustic wave device is praised as a new era for creating wireless and small sensors; meanwhile, the sensor has strong compatibility with an integrated circuit and is widely applied to the fields of analog-digital communication and sensing. The surface acoustic wave sensor can concentrate signals on the surface of a substrate, has high working frequency and extremely high information sensitivity precision, can quickly convert detected information into electric signals to be output and has the characteristic of real-time information detection; in addition, the surface acoustic wave sensor also has the advantages of miniaturization, integration, passivity, low cost, low power consumption, direct frequency signal output and the like. At present, various types such as surface acoustic wave pressure sensors, surface acoustic wave temperature sensors, surface acoustic wave biological gene sensors, surface acoustic wave chemical gas phase sensors, intelligent sensors and the like are formed in China.
The surface acoustic wave sensor has two basic configurations, namely a delay line type and a resonant type. The delay line type and resonant type surface acoustic wave sensors are structurally composed of a piezoelectric substrate, a first interdigital transducer and an emitting grid. Mauder and Rapp et al compare oscillators for these two configurations of sensors, respectively: for SAW delay lines, where the phase contribution from the oscillator loop is small, the attenuation of the acoustic wave by the cover film material is also relatively small, and the delay line readily provides a separate film-forming area. But a disadvantage of the saw delay line is that the insertion loss is relatively large. The SAW resonator has the characteristics of high quality factor and low loss, and an oscillator formed by the SAW resonator as a frequency control element is easy to start oscillation and can obtain good frequency stability. However, the resonator is difficult to provide a separate sensitive film forming area, and the application of a self-assembly sensitive film forming mode requiring an active gold film is limited.
Disclosure of Invention
In order to solve the above problems, the present invention provides a surface acoustic wave single-ended resonator.
The invention provides a surface acoustic wave single-end-to-resonator, comprising: the device comprises a piezoelectric substrate, a first interdigital transducer, a first reflecting grating and a second reflecting grating; the first interdigital transducer is arranged on the piezoelectric substrate, the first reflection grating and the second reflection grating have the same structure, and are symmetrically arranged at two ends of the first interdigital transducer; further comprising: a sensitive film and a second interdigital transducer;
the second interdigital transducer is arranged between the first reflection grating and the second reflection grating and is connected with the upper return strip and the lower return strip of the first interdigital transducer; the sensitive film is arranged in the middle of the first interdigital transducer and the second interdigital transducer.
Preferably, the first interdigital transducer and the second interdigital transducer are in the same structure and are arranged in an anti-symmetric mode.
Preferably, the second interdigital transducer is disposed between the first interdigital transducer and the second reflective grating.
Preferably, the sensitive film is deposited in an area formed by connecting upper and lower reflow strips of the first interdigital transducer and the second interdigital transducer, and does not contact with the first interdigital transducer and the second interdigital transducer.
Preferably, after the left and right sound waves generated by the first interdigital transducer and the second interdigital transducer are superposed, the energy is concentrated in the sensitive film area.
Preferably, the sensitive films are a conductive sensitive film and a high viscosity sensitive film.
According to the single-end-to-resonator, the interdigital transducer is added, so that the advantages of high quality factor and low loss of the resonator are guaranteed, and the detection sensitivity, consistency and stability of the sensor are improved. Meanwhile, a sensitive film is arranged between the two interdigital transducers, so that the problem of a film forming area of the sensitive film is solved, and the method is easily applied to the field of sensors. In addition, the sensitive film is prevented from contacting the electrodes of the interdigital fingers during deposition of the sensitive film, so that the performance and the quality factor of the transducer are not influenced.
Drawings
FIG. 1 is a schematic diagram of a SAW single-ended-to-resonator in the prior art;
FIG. 2 is a graph showing the amplitude distribution of surface acoustic waves at the resonant frequency of a single-port resonator in the prior art;
fig. 3 is a schematic diagram of a surface acoustic wave single-ended resonator according to an embodiment of the present invention;
fig. 4 is a distribution diagram of the amplitude of the surface acoustic wave at the resonant frequency of the single-ended resonator according to the embodiment of the present invention.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the present invention are further described in detail below with reference to the accompanying drawings and the embodiments.
Fig. 1 is a prior art saw one-terminal-to-resonator, which includes: a piezoelectric substrate 11, a first interdigital transducer 12, a first reflection grating 13, and a second reflection grating 14. In the single-ended resonator, a first interdigital transducer 12 is arranged on a piezoelectric substrate 11, and a first reflection grating 13 and a second reflection grating 14 are symmetrically arranged at two ends of the first interdigital transducer 12 respectively, wherein the structures of the first reflection grating 13 and the second reflection grating 14 are completely the same.
According to the acoustic theory, the amplitude expression of the surface acoustic wave of the piezoelectric substrate 11 of the single-ended resonator is as follows:
wherein, a±(x, y) represents a surface acoustic wave propagating in the right and left directions in a periodic medium, A±(x, y) represents the amplitude of the surface acoustic wave propagating in the right and left directions in the periodic medium, k is the wave number of the surface acoustic wave propagating along the x direction, and k is the wave number of the surface acoustic wave propagating along the x direction0The wave number of the surface acoustic wave is not disturbed.
According to the coupled mode equation, the following can be obtained:
＝k-jγα+κ11-k0
wherein, κ11And kappa12Is a coupled mode parameter, alpha is an excitation coefficient, and gammaαFor the decay constant, γ is the anisotropy parameter and V is the voltage applied between the electrodes.
The acoustic surface waves propagated in the right direction and the left direction are respectively obtained through calculation, and the amplitude distribution of the acoustic surface waves on the surface of the piezoelectric substrate 11 can be obtained after superposition:
in one embodiment, as shown in FIG. 2, the amplitude profile of the SAW amplitude at the resonant frequency of a prior art single-ended resonator is shown, wherein the sonic energy is mainly concentrated in the middle region of the single-ended resonator, and the SAW amplitude is about 95. Although the single-end-pair resonator with the structure has the advantages of low loss and high quality factor, the sensitivity is low, and the application to the field of sensors is difficult due to the lack of a coating area.
To overcome this problem, a saw one-terminal pair resonator as shown in fig. 3 is added with a sensitive film 15 and a second interdigital transducer 16. Wherein the second interdigital transducer 16 is disposed between the first and second reflection gratings 13 and 14, either to the left of the first interdigital transducer 12 or to the right of the first interdigital transducer 12 (fig. 3 illustrates the right of the first interdigital transducer 12), and the sensitive film is disposed at a position intermediate the first interdigital transducer 12 and the second interdigital transducer 16.
Alternatively, the deposition method of the sensitive film 15 may be conventional coating, spraying, etc. to achieve deposition of the sensitive film 15.
Alternatively, the sensitive film 15 is applicable to various sensitive films, and has certain advantages in a conductive sensitive film and a high-viscosity sensitive film. By optimizing the conductive sensitive film and the high-viscosity sensitive film, the phenomena that the device cannot be used or the quality factor is greatly lost due to the deposition of other sensitive films are avoided.
Alternatively, the first interdigital transducer 12 and the second interdigital transducer 16 are identical in structure and are placed in anti-symmetric manner, which is equivalent to that the number of interdigital strips 121 is increased by one time, so that the number of excited surface acoustic waves of the single-ended pair resonator is also increased by one time at the resonance frequency, and the amplitude after superposition is also increased by one time.
Optionally, the reflow strips 122 of the first interdigital transducer 12 and the second interdigital transducer 16 are connected so as to ensure that an area for depositing the sensitive film 15 is defined between the two interdigital transducers.
Optionally, the post-deposition sensitive film 15 does not contact the first interdigital transducer 12 and the second interdigital transducer 16, so as to avoid the performance deterioration of the transducer after the sensitive film 15 contacts the electrodes of the interdigital finger 121, and also avoid the degradation of the quality factor of the transducer caused by the sensitive film 15 contacting the electrodes of the interdigital finger 121.
Because the single end of the surface acoustic wave is opposite to the resonator by adopting a symmetrical structure, the maximum value of the amplitude appears at the middle position after the surface acoustic waves propagating in the left and right directions are superposed, and the sensitivity of the single end of the surface acoustic wave to the resonator can be maximum by selecting the sensitive film 15 in the middle area.
In one embodiment, as shown in fig. 4, the distribution diagram of the amplitude of the surface acoustic wave at the resonant frequency of the single-ended resonator in the embodiment of the present invention is shown, and the amplitude of the surface acoustic wave is about 190.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A surface acoustic wave single-ended-pair resonator comprising: a piezoelectric substrate (11), a first interdigital transducer (12), a first reflection grating (13) and a second reflection grating (14); the first interdigital transducer (12) is arranged on the piezoelectric substrate (11), the first reflection grating (13) and the second reflection grating (14) have the same structure, and are symmetrically arranged at two ends of the first interdigital transducer (12); it is characterized by also comprising: a sensitive film (15) and a second interdigital transducer (16);
the second interdigital transducer (16) is arranged between the first reflection grating (13) and the second reflection grating (14), and the second interdigital transducer (16) is connected with the upper and lower return strips (122) of the first interdigital transducer (12); the sensitive film (15) is arranged at an intermediate position between the first interdigital transducer (12) and the second interdigital transducer (16).
2. A surface acoustic wave single-ended resonator according to claim 1, characterized in that said first interdigital transducer (12) and said second interdigital transducer (16) are structurally identical and placed anti-symmetrically.
3. A surface acoustic wave single-ended-pair resonator according to claim 1, characterized in that said second interdigital transducer (16) is arranged between said first interdigital transducer (12) and said second reflection grating (14).
4. Surface acoustic wave single-ended pair resonator according to claim 1, characterized in that the sensitive film (15) is deposited in the area constituted by the connection of the upper and lower return strips (122) of the first interdigital transducer (12) and the second interdigital transducer (16), without contacting the first interdigital transducer (12) and the second interdigital transducer (16).
5. A surface acoustic wave single-ended-pair resonator according to claim 1, characterized in that the superposition of the left and right acoustic waves generated by said first interdigital transducer (12) and said second interdigital transducer (16) results in a concentration of energy in the area of said sensitive membrane (15).
6. A surface acoustic wave single-ended pair resonator according to claim 1, characterized in that said sensitive film (15) is a conductive sensitive film and a highly viscous sensitive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810653646.8A CN108933579B (en) | 2018-06-22 | 2018-06-22 | Acoustic surface wave single-end-to-resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810653646.8A CN108933579B (en) | 2018-06-22 | 2018-06-22 | Acoustic surface wave single-end-to-resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108933579A CN108933579A (en) | 2018-12-04 |
| CN108933579B true CN108933579B (en) | 2020-11-06 |
Family
ID=64446882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810653646.8A Expired - Fee Related CN108933579B (en) | 2018-06-22 | 2018-06-22 | Acoustic surface wave single-end-to-resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108933579B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110231399A (en) * | 2019-07-08 | 2019-09-13 | 电子科技大学 | A kind of Surface Acoustic Waves Humidity Sensor based on bacteria cellulose sensing membrane |
| CN113054943B (en) * | 2021-03-29 | 2023-07-07 | 北京航天微电科技有限公司 | Method and system for improving stop band suppression, surface acoustic wave filter and electronic equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677853A (en) * | 2004-03-30 | 2005-10-05 | 中国科学院声学研究所 | Acoustic surface-wave oscillator system for gas sensor |
| CN101865884A (en) * | 2009-11-24 | 2010-10-20 | 中国科学院声学研究所 | Single-mode protruding double-end resonant surface acoustic wave detector |
| CN102739186A (en) * | 2011-03-31 | 2012-10-17 | 三星电机株式会社 | Piezoelectric resonator and electrode structure thereof |
| CN102798663A (en) * | 2012-08-17 | 2012-11-28 | 天津理工大学 | SAW gas sensor applying dispersion interdigital transducer |
| CN105716759A (en) * | 2016-02-02 | 2016-06-29 | 上海交通大学 | Rotating shaft torque measuring device based on surface transverse wave |
| CN106442717A (en) * | 2016-10-25 | 2017-02-22 | 中国工程物理研究院激光聚变研究中心 | Surface acoustic wave transducer for detecting volatile organic pollutants |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066943B (en) * | 2012-12-21 | 2015-09-09 | 中国科学院声学研究所 | A kind of SAW (Surface Acoustic Wave) resonator for gas sensor |
| CN103066945B (en) * | 2012-12-21 | 2015-11-04 | 中国科学院声学研究所 | For the SAW mode of resonance oscilator system of gas sensor |
| CN103117727A (en) * | 2013-02-06 | 2013-05-22 | 中国电子科技集团公司第二十六研究所 | High-impedance surface acoustic wave resonator |
| US20170104470A1 (en) * | 2015-10-09 | 2017-04-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Interdigitated transducers and reflectors for surface acoustic wave devices with non-uniformly spaced elements |
-
2018
- 2018-06-22 CN CN201810653646.8A patent/CN108933579B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677853A (en) * | 2004-03-30 | 2005-10-05 | 中国科学院声学研究所 | Acoustic surface-wave oscillator system for gas sensor |
| CN101865884A (en) * | 2009-11-24 | 2010-10-20 | 中国科学院声学研究所 | Single-mode protruding double-end resonant surface acoustic wave detector |
| CN102739186A (en) * | 2011-03-31 | 2012-10-17 | 三星电机株式会社 | Piezoelectric resonator and electrode structure thereof |
| CN102798663A (en) * | 2012-08-17 | 2012-11-28 | 天津理工大学 | SAW gas sensor applying dispersion interdigital transducer |
| CN105716759A (en) * | 2016-02-02 | 2016-06-29 | 上海交通大学 | Rotating shaft torque measuring device based on surface transverse wave |
| CN106442717A (en) * | 2016-10-25 | 2017-02-22 | 中国工程物理研究院激光聚变研究中心 | Surface acoustic wave transducer for detecting volatile organic pollutants |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108933579A (en) | 2018-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20060254356A1 (en) | Wireless and passive acoustic wave liquid conductivity sensor | |
| JP5138246B2 (en) | Pressure sensor | |
| CN101846653B (en) | Piezoelectric film bulk acoustic wave sensor with polygonal electrodes | |
| US8258674B2 (en) | Surface acoustic wave sensor and system | |
| CN108871627B (en) | Differential double-resonator type acoustic wave pressure sensor | |
| CN107525610B (en) | FBAR micro-pressure sensor based on shear wave mode excited in thickness direction | |
| CN108933579B (en) | Acoustic surface wave single-end-to-resonator | |
| CN112816109B (en) | Radio frequency pressure sensor | |
| CN109506808B (en) | SAW temperature sensor with monotone and linear output characteristics and design method thereof | |
| AU752276B2 (en) | Method and device for operating a microacoustic sensor array | |
| CN103066943B (en) | A kind of SAW (Surface Acoustic Wave) resonator for gas sensor | |
| CN107040234A (en) | A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector | |
| US7075216B1 (en) | Lateral field excited acoustic wave sensor | |
| CN109194302B (en) | Acoustic surface wave three-transducer double-end-to-resonator | |
| JP2003258596A (en) | Lamb wave type high frequency resonator, oscillator employing the same, and high frequency signal generating method employing the lamb wave | |
| Hoummady et al. | Acoustic wave viscometer | |
| CN205647458U (en) | High sensitivity's bi -polar is to resonant mode surface acoustic wave detector | |
| JP2000214140A (en) | Sensor | |
| CN100571026C (en) | SAW (Surface Acoustic Wave) delay line with single phase single direction structure | |
| CN114793103A (en) | Acoustic wave resonator suitable for multi-parameter sensing | |
| CN2689592Y (en) | Sound surface wave delaying lines | |
| CN107421655B (en) | Even-order Lamb wave generating device and temperature detection system | |
| JP2008180668A (en) | Lamb wave type high-frequency sensor device | |
| US6637268B1 (en) | Vibration displacement sensing system | |
| JP7351508B2 (en) | Recognition signal generation element and element recognition system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201106 |