CN107525610B - FBAR micro-pressure sensor based on shear wave mode excited in thickness direction - Google Patents
FBAR micro-pressure sensor based on shear wave mode excited in thickness direction Download PDFInfo
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- CN107525610B CN107525610B CN201710678976.8A CN201710678976A CN107525610B CN 107525610 B CN107525610 B CN 107525610B CN 201710678976 A CN201710678976 A CN 201710678976A CN 107525610 B CN107525610 B CN 107525610B
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- G01L1/00—Measuring force or stress, in general
- G01L1/10—Measuring force or stress, in general by measuring variations of frequency of stressed vibrating elements, e.g. of stressed strings
Abstract
The invention belongs to the field of microelectronic devices, and provides an FBAR (film bulk acoustic resonator) micro-pressure sensor based on a thickness direction excitation shear wave mode, which comprises a silicon substrate, wherein an insulating layer is deposited on the upper surface of the silicon substrate, a Bragg reflecting layer is deposited on the upper surface of the insulating layer, a bottom electrode is deposited on the upper surface of the Bragg reflecting layer, an AlN piezoelectric film is arranged above the bottom electrode and the Bragg reflecting layer, a top electrode which is the same as the bottom electrode in shape and corresponds to the bottom electrode in position is arranged on the upper surface of the AlN piezoelectric film, 4 micro-pressure sensitive layers are deposited on the upper surface of the piezoelectric film, the micro-pressure sensitive layers are symmetrically arranged at the edge of the piezoelectric film and are arranged in a staggered mode with the top electrode, and a micro-pressure applying layer. The invention has the advantages of high Q value and high working frequency, and has the characteristics of high resolution, high sensitivity, low energy consumption, high firmness and low cost, and can be widely applied to the field of micro-pressure sensors.
Description
Technical Field
The invention relates to an FBAR (film bulk acoustic resonator) micro-pressure sensor, in particular to an FBAR micro-pressure sensor based on a shear wave mode excited in the thickness direction, and belongs to the field of microelectronic devices.
Background
With the development of integrated circuit fabrication processes, Film Bulk Acoustic Resonators (FBARs) are rapidly developing. Because of the advantages of high quality factor, high resonant frequency, low insertion loss, high detection precision, compatibility with CMOS technology, relatively small volume and the like. The requirements of handheld mobile and wearable equipment are well met, so that the handheld mobile and wearable equipment is widely and commercially applied in the field of mobile communication. On the basis of this, the superiority of the method in the field of sensors is attracting extensive research interest.
Pressure is one of the most basic physical quantities, and micro pressure sensors are widely used in both daily life and industrial fields. Mechanical sensors are widely available, such as piezoresistive micro pressure sensors, capacitive micro pressure sensors, inductive micro pressure sensors and resonant micro pressure sensors. The FBAR micro pressure sensor belongs to a resonance type micro pressure sensor, and works in a GHz frequency band, so that the FBAR micro pressure sensor has high sensitivity and high resolution. The method has wide application prospect in civil and military electronic equipment in the future.
The FBAR device may be classified into a longitudinal mode (longitudinal mode) and a shear mode (shear mode) according to a difference in a bulk acoustic wave propagation mode in the FBAR. Typically, the shear wave velocity is about half the longitudinal wave velocity, which enables a time-varying signal to be fully represented on a smaller sized crystal substrate at a given instant. Therefore, the size of the shear mode FBAR is much smaller than the size of the longitudinal mode FBAR at the same resonance frequency; and because the longitudinal wave is greatly attenuated when being transmitted in the liquid phase environment, the Q value of the FBAR in the shear wave mode in the liquid phase environment is higher than that of the FBAR in the longitudinal wave mode, and therefore, the FBAR in the shear wave mode is smaller in volume and more suitable for sensing application in the liquid phase environment or viscous media.
Shear-mode FBAR devices can be classified into a Thickness-direction excitation mode (TE) and a Lateral Field excitation mode (LFE) according to the type of acoustic excitation. Two electrodes of the thickness direction shear wave mode FBAR are positioned on two sides of the piezoelectric film, the electric field direction is the thickness direction, and the c-axis orientation of the piezoelectric film and the electric field direction form a certain included angle. Compared with a lateral field direction excitation mode FBAR, the thickness direction excitation mode FBAR is an electrode-piezoelectric layer-electrode sandwich structure, and excited bulk acoustic waves are well reflected at an interface between an electrode and air, so that the bulk acoustic waves are limited in the piezoelectric layer of the FBAR, namely the FBAR in a thickness direction excitation shear wave mode has low energy loss, and has wide application prospects in the field of sensors in the future.
The invention discloses a micro-pressure sensor with an on-membrane FBAR structure, which is published by the institute of electronic engineering of Chinese institute of engineering and physics, and is published with CN 104614099A. The FBAR acts as an electroacoustic resonator that converts the sensed strain to the FBAR resonant frequencyf 0 To detect pressure. The disadvantages of this solution are: firstly, the micro-pressure sensor adopts a back etching type structure, and the structure removes most silicon from the back surface of a silicon wafer by etching by adopting a bulk silicon process of MEMS (micro-electromechanical systems)The material has a great influence on the mechanical firmness of the device, and the yield is greatly reduced although a low-stress supporting layer is arranged; secondly, the micro-pressure sensor adopts a longitudinal wave mode, the longitudinal wave is greatly attenuated in a liquid phase environment or a viscous medium, and the application field and the occasion of the FBAR micro-pressure sensor are limited by adopting the longitudinal wave mode.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides an FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode. The FBAR micro-pressure sensor has the characteristics of high Q value, high working frequency, high resolution, high sensitivity, low energy consumption, high firmness and low cost, and can work in a closed environment, a liquid phase environment or an environment in a viscous medium.
In order to achieve the purpose, the technical scheme of the invention is as follows: an FBAR micro-pressure sensor based on a shear wave mode excited in the thickness direction comprises a silicon substrate, an insulating layer, a Bragg reflecting layer, a bottom electrode, an AlN piezoelectric film, a top electrode, a micro-pressure sensitive layer and a micro-pressure applying layer; the insulating layer is a SiO2 insulating layer deposited on the upper surface of a silicon substrate, a Bragg reflecting layer is deposited on the upper surface of the insulating layer, a bottom electrode is deposited on the upper surface of the Bragg reflecting layer, the AlN piezoelectric film is arranged on the upper surfaces of the bottom electrode and the Bragg reflecting layer, a top electrode which is the same as the bottom electrode in shape and corresponds to the bottom electrode in position is arranged on the upper surface of the AlN piezoelectric film, 4 micro-pressure sensitive layers are deposited on the upper surface of the piezoelectric film, the micro-pressure sensitive layers are symmetrically arranged at the edge of the piezoelectric film and are arranged in a staggered mode with the top electrode, the micro-pressure applying layer is bonded on the micro-pressure sensitive layer and used as a uniform stress structure during micro-pressure detection, and the micro-pressure layer is used for receiving pressure to be detected. The micro-pressure sensor adopts a solid assembly type structure, a cavity or an air gap does not need to be etched on the structure, the mechanical firmness of the sensor can be well enhanced, and the single sensor has smaller size and lower cost.
Further, the c-axis inclination angle of the AlN piezoelectric film is 46.5 degrees, and under the angle, the FBAR micro-pressure sensor works in a shear wave mode excited in the thickness direction.
Furthermore, the Bragg reflection layer adopts ta-C as a high acoustic impedance material of the Bragg reflection layer, and AlN as a low acoustic impedance material of the Bragg reflection layer. the ta-C is a tetrahedral amorphous carbon material, and the material has the advantages of high elastic modulus, high bulk acoustic wave propagation speed and the like, and is well selected as a high-acoustic impedance material. AlN is an aluminum nitride material, AlN is selected as a low-acoustic-impedance material, the material can be the same as that of the piezoelectric film, corresponding process steps are simplified, and compared with other materials, the material has small difference with the thermal expansion coefficient of the piezoelectric film, and is an ideal low-acoustic-impedance material.
Furthermore, the micro-pressure sensitive layer and the micro-pressure applying layer are made of silicon materials, and the upper electrode and the lower electrode are made of Mo materials. The micro-pressure applying layer is used as a uniform stress structure during micro-pressure detection. The damage of the structure caused by the direct action of micro-pressure on the surface of the device can be avoided. FBAR devices with Mo as the electrode material can achieve higher resonant frequencies and Q values than other electrode materials.
Further, the bottom electrodes and the top electrodes respectively comprise 2 electrodes which are symmetrically distributed on the upper surface and the lower surface of the AlN piezoelectric film, one bottom electrode and the corresponding top electrode form an excitation electrode, and the other bottom electrode and the corresponding top electrode form a detection electrode.
Further, the preparation process of the FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode comprises the following steps:
a. RCA cleaning is carried out on the silicon substrate, and pollution particles on the silicon substrate 1 are removed;
b. depositing a layer of SiO on a silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD)2An insulating layer;
c. depositing a Bragg reflection layer on the insulation layer by using a magnetron sputtering process;
d. depositing a bottom electrode on the formed structure, and patterning the bottom electrode by using a photoetching process;
e. growing an AlN piezoelectric film layer by magnetron sputtering;
f. depositing a top electrode on the AlN piezoelectric film layer, and patterning the top electrode layer by using a photoetching process;
g. depositing a micro-pressure sensitive layer on the AlN piezoelectric film layer, and patterning the micro-pressure sensitive layer by using a photoetching process;
h. and bonding a layer of silicon on the micro-pressure sensitive layer as a micro-pressure applying layer. The solid-state fabricated structure has the advantages that no cavity or air gap needs to be etched on the structure, the mechanical firmness of the sensor can be well enhanced, and the size and the cost of a single sensor are smaller.
Compared with the prior art, the invention has the following beneficial effects:
according to the FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode, the thickness direction excitation mode is adopted, a back etching cavity is not needed, the mechanical firmness is high, and the yield is high; the air gap does not need to be formed, the size of a single device is small, the cavity or the air gap on the back does not need to be formed by an expensive MEMS process, and the cost is low. The method has the characteristics of high resolution, high sensitivity, low power consumption and the like. Can work in closed environments, liquid environments or viscous medium environments. The technical requirements of miniaturization and integration of the micro-pressure sensor can be met.
Drawings
FIG. 1 is a top view of the present invention;
FIG. 2 is a schematic view of the structure in the direction of FIG. 1A-A;
FIG. 3 is a schematic diagram of the main steps of the fabrication process of the present invention;
FIG. 4 is a graph of pressure versus characteristic frequency for the present invention;
fig. 5 is a graph of the frequency response of the present invention under different pressure conditions.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the FBAR micro-pressure sensor based on shear wave mode excitation in the thickness direction according to the present invention includes a silicon substrate 1, an insulating layer 2, a bragg reflective layer 3, a bottom electrode 4, an AlN piezoelectric film 5, a top electrode 6, a micro-pressure sensitive layer 7, and a micro-pressure applying layer 8, which are sequentially disposed from bottom to top.
The insulating layer 2 is a SiO2 insulating layer deposited on the upper surface of the silicon substrate 1, a Bragg reflection layer 3 is deposited on the upper surface of the insulating layer 2, a bottom electrode 4 is deposited on the upper surface of the Bragg reflection layer 3, the AlN piezoelectric film 5 is arranged on the bottom electrode 4 and the upper surface of the Bragg reflection layer 3, the shape of the AlN piezoelectric film 5 is the same as that of the bottom electrode 4, and the corresponding position of the top electrode 6, 4 micro pressure sensitive layers 7 are deposited on the upper surface of the piezoelectric film 5, the micro pressure sensitive layers 7 are symmetrically arranged at the edge of the piezoelectric film 5, and is arranged in a staggered way with the top electrode 6, the micro pressure sensitive layer 7 is bonded with the micro pressure applying layer 8, the micro-pressure sensitive layer 7 is used as a uniform stress structure during micro-pressure detection, and the micro-pressure applying layer 8 is used for receiving pressure to be detected.
Wherein, the c-axis direction of the AlN piezoelectric film 5 forms an angle of 46.5 ° with the vertical direction, which is the thickness direction of the FBAR micro-pressure sensor, so that the FBAR micro-pressure sensor operates in a shear wave mode excited in the thickness direction.
The Bragg reflection layer 3 adopts ta-C as a high acoustic impedance material of the Bragg reflection layer and adopts AlN as a low acoustic impedance material of the Bragg reflection layer. the ta-C is a tetrahedral amorphous carbon material, and the material has the advantages of high elastic modulus, high bulk acoustic wave propagation speed and the like, and is well selected as a high-acoustic impedance material. AlN is an aluminum nitride material, AlN is selected as a low-acoustic-impedance material, the material can be the same as that of the piezoelectric film, corresponding process steps are simplified, and compared with other materials, the material has small difference with the thermal expansion coefficient of the piezoelectric film, and is an ideal low-acoustic-impedance material.
The micro pressure sensitive layer 7 and the micro pressure applying layer 8 are made of silicon materials, and the upper electrode and the lower electrode are made of Mo materials.
Further, as shown in fig. 1, each of the bottom electrodes 4 and the top electrodes 6 includes 2 electrodes, and the 2 electrodes are respectively and symmetrically distributed on the upper surface and the lower surface of the AlN piezoelectric film 5, wherein one of the bottom electrodes 4 and the corresponding top electrode 6 form an excitation electrode, and the other one of the bottom electrodes 4 and the corresponding top electrode 6 form a detection electrode.
Fig. 3 is a schematic diagram of the steps of the FBAR micro-pressure sensor manufacturing process based on shear wave mode excitation in the thickness direction, which includes the following eight main steps:
a. RCA cleaning is carried out on the silicon substrate 1, and pollution particles on the silicon substrate 1 are removed;
b. deposition of a layer of SiO on a silicon substrate 1 using plasma-enhanced chemical vapor deposition2An insulating layer 2;
c. depositing a Bragg reflection layer 3 on the insulation layer 2 by using a magnetron sputtering process;
d. depositing a bottom electrode 4 on the formed structure, and patterning the bottom electrode 4 by using a photoetching process;
e. growing an AlN piezoelectric film layer 5 by magnetron sputtering;
f. depositing a top electrode 6 on the AlN piezoelectric thin film layer 5, and patterning the top electrode layer 6 by using a photoetching process;
g. depositing a micro-pressure sensitive layer 7 on the AlN piezoelectric film layer 5, and patterning the micro-pressure sensitive layer 7 by using a photoetching process;
h. a silicon layer is bonded on the minute pressure sensitive layer 7 as a minute pressure applying layer 8.
According to the FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode, an electric field is excited along the thickness direction of the piezoelectric layer, but the c-axis direction of the piezoelectric film is inclined and forms a certain angle with the thickness direction. FBAR sensors based on tilted growth of the c-axis of the piezoelectric layer can achieve better performance in a liquid phase environment than FBAR sensors in longitudinal wave mode. The Q value attenuation of the FBAR sensor in the longitudinal wave mode is obvious, the sound waves inside the FBAR sensor in the shear wave mode are transmitted along the thickness direction of the piezoelectric layer, the particle vibration direction is vertical to the transmission direction, the work sound waves collected in a liquid phase environment are not easy to leak, and a higher Q value can be obtained.
The invention provides a working principle of a micro-pressure sensor as follows: when an alternating voltage is applied between electrodes of the FBAR, the piezoelectric film is mechanically deformed by an inverse piezoelectric effect, thereby exciting a bulk acoustic wave propagating in the piezoelectric film. The bulk acoustic wave with specific wavelength forms standing wave oscillation, and then the bulk acoustic wave with specific wavelength is converted into frequency to be output by the positive piezoelectric effect of the piezoelectric film. A small pressure change on the surface of the piezoelectric film will cause a change in its resonant frequency. Therefore, the change of the stress of the piezoelectric film can be reflected through the change of the resonant frequency of the measuring device, and the aim of measuring the micro pressure is further fulfilled.
In order to verify the feasibility of the FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode, the FBAR micro-pressure sensor is subjected to multi-physical field finite element simulation. Fig. 4 shows the pressure-characteristic frequency relationship of an FBAR micro-pressure sensor based on lateral field-excited shear wave modes. As can be seen from FIG. 4, the FBAR micro-pressure sensor based on the thickness direction excited shear wave mode provided by the invention has good linearity in the pressure range of 0-1800kPa, which shows that the FBAR micro-pressure sensor based on the thickness direction excited shear wave mode has good sensitivity when carrying out micro-pressure measurement. Fig. 5 is a graph showing the frequency response of an FBAR micro-pressure sensor based on shear wave mode excitation in the thickness direction. As can be seen from FIG. 5, the resonant frequency of the FBAR micro-pressure sensor based on thickness-direction excitation of the shear wave mode is 0.7108 GHz.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. An FBAR micro-pressure sensor based on shear wave mode excitation in the thickness direction is characterized by comprising a silicon substrate (1), an insulating layer (2), a Bragg reflecting layer (3), a bottom electrode (4), an AlN piezoelectric film (5), a top electrode (6), a micro-pressure sensitive layer (7) and a micro-pressure applying layer (8);
the insulating layer (2) is a SiO2 insulating layer deposited on the upper surface of a silicon substrate (1), a Bragg reflecting layer (3) is deposited on the upper surface of the insulating layer (2), a bottom electrode (4) is deposited on the upper surface of the Bragg reflecting layer (3), the AlN piezoelectric film (5) is arranged on the upper surfaces of the bottom electrode (4) and the Bragg reflecting layer (3), a top electrode (6) which is the same as the bottom electrode (4) in shape and corresponds to the bottom electrode (4) in position is arranged on the upper surface of the AlN piezoelectric film (5), 4 micro pressure sensitive layers (7) are further deposited on the upper surface of the AlN piezoelectric film (5), the micro pressure sensitive layers (7) are symmetrically arranged at the edge of the piezoelectric film (5) and are arranged in a staggered mode with the top electrode (6), and the micro pressure applying layer (8) is bonded on the micro pressure sensitive layers (7), the micro-pressure sensitive layer (7) is used as a uniform stress structure in micro-pressure detection, and the micro-pressure applying layer (8) is used for receiving pressure to be detected.
2. The FBAR micro-pressure sensor based on thickness direction excitation shear wave mode as claimed in claim 1, characterized in that the c-axis direction of the AlN piezoelectric film (5) is at an angle of 46.5 ° with the vertical direction.
3. The FBAR micro-pressure sensor based on thickness direction excitation shear wave mode as claimed in claim 1, characterized in that the Bragg reflection layer (3) adopts ta-C as the high acoustic impedance material of the Bragg reflection layer and AlN as the low acoustic impedance material of the Bragg reflection layer.
4. The FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode as claimed in claim 1, wherein the micro-pressure sensitive layer (7) and the micro-pressure applying layer (8) adopt silicon material, and the upper electrode and the lower electrode adopt Mo material.
5. The FBAR micro-pressure sensor based on the thickness direction excitation shear wave mode as claimed in claim 1, wherein the bottom electrode (4) and the top electrode (6) comprise 2 electrodes, and are symmetrically distributed on the upper surface and the lower surface of the AlN piezoelectric film (5), respectively, one bottom electrode (4) and the corresponding top electrode (6) form an excitation electrode, and the other bottom electrode (4) and the corresponding top electrode (6) form a detection electrode.
6. The FBAR micro-pressure sensor based on thickness direction excitation shear wave mode as claimed in claim 1, characterized in that the preparation process is:
a. RCA cleaning is carried out on the silicon substrate (1) to remove the pollution particles on the silicon substrate (1);
b. depositing a layer of SiO on a silicon substrate (1) using plasma enhanced chemical vapour deposition2An insulating layer (2);
c. depositing a Bragg reflection layer (3) on the insulating layer (2) by using a magnetron sputtering process;
d. depositing a bottom electrode (4) on the formed structure, and patterning the bottom electrode (4) by using a photoetching process;
e. growing an AlN piezoelectric film (5) by magnetron sputtering;
f. depositing a top electrode (6) on the AlN piezoelectric film (5), and patterning the top electrode (6) by using a photoetching process;
g. depositing a micro-pressure sensitive layer (7) on the AlN piezoelectric film (5), and patterning the micro-pressure sensitive layer (7) by using a photoetching process;
h. a layer of silicon is bonded on the micro-pressure sensitive layer (7) as a micro-pressure applying layer (8).
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| WO2020258334A1 (en) * | 2019-06-28 | 2020-12-30 | 瑞声声学科技(深圳)有限公司 | Resonator and preparation method therefor |
| CN111313861B (en) * | 2020-02-25 | 2024-03-08 | 绍兴中芯集成电路制造股份有限公司 | Surface acoustic wave resonator and method of forming the same |
| CN111678585B (en) * | 2020-06-18 | 2022-08-23 | 中北大学 | High-sensitivity AlN piezoelectric hydrophone and preparation method thereof |
| CN112326720B (en) * | 2020-10-30 | 2022-05-20 | 河海大学 | Method for extracting thermal expansion coefficient of MEMS multilayer film material |
| CN113295303A (en) * | 2021-04-29 | 2021-08-24 | 北京遥测技术研究所 | Aluminum nitride piezoelectric MEMS resonant pressure sensor |
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