CN101726538A - Acoustic surface wave gas sensor and manufacturing method thereof - Google Patents
Acoustic surface wave gas sensor and manufacturing method thereof Download PDFInfo
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- CN101726538A CN101726538A CN200810224902A CN200810224902A CN101726538A CN 101726538 A CN101726538 A CN 101726538A CN 200810224902 A CN200810224902 A CN 200810224902A CN 200810224902 A CN200810224902 A CN 200810224902A CN 101726538 A CN101726538 A CN 101726538A
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- interdigital electrode
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Abstract
The invention discloses an acoustic surface wave gas sensor which comprises a piezoelectric crystal substrate, a first interdigital electrode, a second interdigital electrode, a third interdigital electrode and sensitive films, wherein the first interdigital electrode, the second interdigital electrode and the third interdigital electrode are arranged on the surface of the piezoelectric crystal substrate in parallel and at intervals; and the sensitive films capable of absorbing gas to be measured are separately evaporated or coated on the substrate surfaces between the first interdigital electrode and the second interdigital electrode, and between the second interdigital electrode and the third interdigital electrode. The invention also discloses a method for manufacturing the acoustic surface wave gas sensor. The acoustic surface sensor can be used for measuring different gases after matched with different sensitive films, and has the advantages of high sensitivity, simple structure, convenient manufacture, easy signal processing, and compatibility with semiconductor process.
Description
Technical field
The present invention relates to field of sensor production, particularly a kind of sonic surface wave gas sensors and preparation method thereof.
Background technology
1979, Wohltjen and Dessy reported the earliest and adopt surface acoustic wave (SAW) delay line oscillator to survey chemical vapors, and Open from This Side people are to a kind of novel sensor---the door of the research of surface acoustic wave sensor.
The sonic surface wave gas sensors measurement gas has the precision height, the resolution height, antijamming capability is strong, be fit to long-distance transmissions, the measurement repeatability is good, and easily with computing machine, MPU (MICROPROCESSOR UNIT) interface, easily realization is microminiaturized, integrated, intelligent, need under heated condition, not work characteristics such as degree of stability height, power consumption are little.Through the research of many decades, surface acoustic wave sensor by more and more widely be applied in aspect such as gas sensor.
The SAW gas sensor is the most complicated in numerous SAW sensors, the sensor type that involvement aspect is wider.At present, the SAW gas sensor is used for to SO
2, water vapor, acetone, methyl alcohol, H
2, H
2S, NO
2And the detection of toxic gas.At the SAW gas sensor research initial stage, all adopt the single-ended or both-end structure SAW device of delay line type as sensor.Up to nineteen ninety, people's reported first such as Wastson adopt the SAW sensor of high Q value SAW resonator structure to be used for the detection of gas concentration, improved resolution greatly.But no matter be the earliest delay line type, still resonator type afterwards all exists the interference problem of three stroke reflected signals.
Summary of the invention
(1) technical matters that will solve
In view of this, fundamental purpose of the present invention is to provide a kind of sonic surface wave gas sensors and preparation method thereof, to solve the interference problem of three stroke reflected signals.
(2) technical scheme
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of sonic surface wave gas sensors, this sonic surface wave gas sensors comprises:
One piezoelectric crystal substrate;
Be prepared in three groups of first interdigital electrode, second interdigital electrode and the 3rd interdigital electrodes that are parallel to each other and equate at interval of this piezoelectric crystal substrate surface; And
In first interdigital electrode and second interdigital electrode, and the sensitive membrane that can adsorb tested gas of evaporation or coating respectively of the substrate surface between second interdigital electrode and the 3rd interdigital electrode.
In the such scheme, described first interdigital electrode and the 3rd interdigital electrode are connected in parallel by metal wire, and as this sonic surface wave gas sensors output terminal; Described second interdigital electrode is as this sonic surface wave gas sensors input end.
In the such scheme, described piezoelectric crystal substrate is quartz substrate, lithium niobate substrate or lithium germanium oxide substrate.
In the such scheme, described sensitive membrane is the Metal Palladium film.
In the such scheme, described first interdigital electrode, second interdigital electrode and the 3rd interdigital electrode, the three is identical, and first interdigital electrode and the 3rd interdigital electrode are about the second interdigital electrode symmetry.
In the such scheme, the sensitive membrane between described first interdigital electrode and second interdigital electrode and second interdigital electrode and the 3rd interdigital electrode is identical.
A kind of method of making sonic surface wave gas sensors, this method comprises:
Gluing, photoetching, development, evaporation metal on the piezoelectric crystal substrate are made three groups of first interdigital electrode, second interdigital electrode and the 3rd interdigital electrodes that are parallel to each other and equate at interval;
In first interdigital electrode and second interdigital electrode, and the substrate surface between second interdigital electrode and the 3rd interdigital electrode respectively evaporation or the coating can adsorb tested gas sensitive membrane;
Adopt metal wire that first interdigital electrode and the 3rd interdigital electrode are connected in parallel, as this sonic surface wave gas sensors output terminal, with second interdigital electrode as this sonic surface wave gas sensors input end;
The making of sonic surface wave gas sensors is finished in encapsulation.
In the such scheme, described piezoelectric crystal substrate is quartz substrate, lithium niobate substrate or lithium germanium oxide substrate.
In the such scheme, described sensitive membrane is the Metal Palladium film.
In the such scheme, described encapsulation is that device and shell are coupled together, and sets pin.
(3) beneficial effect
Sonic surface wave gas sensors provided by the invention and preparation method thereof has well solved the interference problem of three stroke reflected signals.Do not need to increase new ingredient in addition on the structure, need more reflecting grating than the resonator type sound surface wave sensor, the present invention has simplified structure, has suppressed noise.And the signal intensity that receives strengthened one times.Have highly sensitive, simple in structure, the convenient making, signal Processing is easy, can with the advantage of semiconductor technology compatibility.
Description of drawings
Fig. 1 the invention provides the method flow diagram of making sonic surface wave gas sensors;
Fig. 2 is a synoptic diagram of making first interdigital electrode, second interdigital electrode and the 3rd interdigital electrode on the piezoelectric crystal substrate provided by the invention;
Fig. 3 is provided by the invention in first interdigital electrode and second interdigital electrode, and the synoptic diagram of substrate surface evaporation between second interdigital electrode and the 3rd interdigital electrode or coating sensitive membrane;
Fig. 4 is the structural representation of the sonic surface wave gas sensors made of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 the invention provides the method flow diagram of making sonic surface wave gas sensors, and this method comprises:
Step 101: gluing, photoetching, development, evaporation metal on the piezoelectric crystal substrate, make three groups of first interdigital electrode (interdigital electrode A), second interdigital electrode (interdigital electrode B) and the 3rd interdigital electrodes (interdigital electrode C) that are parallel to each other and equate at interval; As shown in Figure 2, described piezoelectric crystal substrate can adopt 127.86 ° of lithium niobates that Y-X is tangential in the present invention for quartz substrate, lithium niobate substrate or lithium germanium oxide substrate etc., and acoustic surface wave propagation speed was not 3485m/s when sensitive membrane had adsorbed gas.The thickness of lithium niobate is about 0.5mm, and through cleaning, photoetching is developed, and steps such as steaming metal form three identical interdigital electrodes on lithium niobate.
Step 102: in first interdigital electrode and second interdigital electrode, and the substrate surface between second interdigital electrode and the 3rd interdigital electrode respectively evaporation or the coating can adsorb tested gas sensitive membrane; As shown in Figure 3, described sensitive membrane is the Metal Palladium film.
Step 103: adopt metal wire that first interdigital electrode and the 3rd interdigital electrode are connected in parallel, as this sonic surface wave gas sensors output terminal, with second interdigital electrode as this sonic surface wave gas sensors input end; As shown in Figure 4.
Step 104: encapsulation, finish the making of sonic surface wave gas sensors.Encapsulation is that device and shell are coupled together, and sets pin.
Refer again to Fig. 4, Fig. 4 is the structural representation of the sonic surface wave gas sensors made of the present invention, and this sonic surface wave gas sensors comprises:
One piezoelectric crystal substrate;
Be prepared in three groups of first interdigital electrode, second interdigital electrode and the 3rd interdigital electrodes that are parallel to each other and equate at interval of this piezoelectric crystal substrate surface; And
In first interdigital electrode and second interdigital electrode, and the sensitive membrane that can adsorb tested gas of evaporation or coating respectively of the substrate surface between second interdigital electrode and the 3rd interdigital electrode.
Described first interdigital electrode and the 3rd interdigital electrode are connected in parallel by metal wire, and as this sonic surface wave gas sensors output terminal; Described second interdigital electrode is as this sonic surface wave gas sensors input end.
Described piezoelectric crystal substrate is quartz substrate, lithium niobate substrate or lithium germanium oxide substrate, and described sensitive membrane is the Metal Palladium film.
Described first interdigital electrode, second interdigital electrode and the 3rd interdigital electrode, the three is identical, and first interdigital electrode and the 3rd interdigital electrode are about the second interdigital electrode symmetry.
Sensitive membrane between described first interdigital electrode and second interdigital electrode and second interdigital electrode and the 3rd interdigital electrode is identical.
In the present invention, in order to realize reducing noise, enhancing signal, simplified structure, three identical interdigital electrodes of each parameter are made in proposition on piezoelectric crystal, as shown in Figure 1, distance between interdigital electrode A and the interdigital electrode B and interdigital electrode B equate with distance between the interdigital electrode C; And adsorption film D and adsorption film E also are identical, as shown in Figure 2; Interdigital electrode A exports as in parallel with interdigital electrode C, and interdigital electrode B is as input end.
Two receive interdigital electrode A and C is complete symmetry, and they are in parallel.Receiving the acoustical signal that interdigital electrode A and C reflect from two absorbs at emission interdigital electrode B, because emission interdigital electrode B is a desirable absorber, so the stroke reflected signal no longer appears three times in output terminal, in addition since interdigital electrode A and C be connected in parallel, the signal that emission interdigital electrode B is produced has obtained absorbing completely, strengthen signal output intensity, also need not as the resonator type sound surface wave sensor, need a large amount of reflecting gratings.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a sonic surface wave gas sensors is characterized in that, this sonic surface wave gas sensors comprises:
One piezoelectric crystal substrate;
Be prepared in three groups of first interdigital electrode, second interdigital electrode and the 3rd interdigital electrodes that are parallel to each other and equate at interval of this piezoelectric crystal substrate surface; And
In first interdigital electrode and second interdigital electrode, and the sensitive membrane that can adsorb tested gas of evaporation or coating respectively of the substrate surface between second interdigital electrode and the 3rd interdigital electrode.
2. sonic surface wave gas sensors according to claim 1 is characterized in that, described first interdigital electrode and the 3rd interdigital electrode are connected in parallel by metal wire, and as this sonic surface wave gas sensors output terminal;
Described second interdigital electrode is as this sonic surface wave gas sensors input end.
3. sonic surface wave gas sensors according to claim 1 is characterized in that, described piezoelectric crystal substrate is quartz substrate, lithium niobate substrate or lithium germanium oxide substrate.
4. sonic surface wave gas sensors according to claim 1 is characterized in that, described sensitive membrane is the Metal Palladium film.
5. sonic surface wave gas sensors according to claim 1 is characterized in that, described first interdigital electrode, second interdigital electrode and the 3rd interdigital electrode, and the three is identical, and first interdigital electrode and the 3rd interdigital electrode are about the second interdigital electrode symmetry.
6. sonic surface wave gas sensors according to claim 1 is characterized in that, the sensitive membrane between described first interdigital electrode and second interdigital electrode and second interdigital electrode and the 3rd interdigital electrode is identical.
7. a method of making sonic surface wave gas sensors is characterized in that, this method comprises:
Gluing, photoetching, development, evaporation metal on the piezoelectric crystal substrate are made three groups of first interdigital electrode, second interdigital electrode and the 3rd interdigital electrodes that are parallel to each other and equate at interval;
In first interdigital electrode and second interdigital electrode, and the substrate surface between second interdigital electrode and the 3rd interdigital electrode respectively evaporation or the coating can adsorb tested gas sensitive membrane;
Adopt metal wire that first interdigital electrode and the 3rd interdigital electrode are connected in parallel, as this sonic surface wave gas sensors output terminal, with second interdigital electrode as this sonic surface wave gas sensors input end;
The making of sonic surface wave gas sensors is finished in encapsulation.
8. the method for making sonic surface wave gas sensors according to claim 7 is characterized in that, described piezoelectric crystal substrate is quartz substrate, lithium niobate substrate or lithium germanium oxide substrate.
9. the method for making sonic surface wave gas sensors according to claim 7 is characterized in that, described sensitive membrane is the Metal Palladium film.
10. the method for making sonic surface wave gas sensors according to claim 7 is characterized in that, described encapsulation is that device and shell are coupled together, and sets pin.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102373470A (en) * | 2010-08-06 | 2012-03-14 | 中国科学院微电子研究所 | Method for preparing compound semiconductor film material |
| CN102376889A (en) * | 2010-08-06 | 2012-03-14 | 中国科学院微电子研究所 | Method for manufacturing semiconductor film |
| CN102507733A (en) * | 2011-11-01 | 2012-06-20 | 中国科学院微电子研究所 | Surface acoustic wave gas sensor and manufacturing method thereof |
| CN102774064A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院微电子研究所 | Sensitive adsorption film and its manufacturing method |
| CN102798663A (en) * | 2012-08-17 | 2012-11-28 | 天津理工大学 | SAW gas sensor applying dispersion interdigital transducer |
| CN103033539A (en) * | 2012-12-20 | 2013-04-10 | 中国科学院微电子研究所 | Preparation method for flexible substrate-based sensitive film for detecting gas at normal temperature |
| CN103091396A (en) * | 2013-01-15 | 2013-05-08 | 西安电子科技大学 | Diesel steam sensor |
| CN108052930A (en) * | 2018-01-02 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of array substrate, its production method, display panel and display device |
| CN110988113A (en) * | 2019-07-09 | 2020-04-10 | 天津中德应用技术大学 | Chemical warfare agent sensor and preparation method thereof |
| CN111157393A (en) * | 2020-01-11 | 2020-05-15 | 浙江师范大学 | Trace mass sensor signal detection circuit |
| CN114204914A (en) * | 2022-02-21 | 2022-03-18 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
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2008
- 2008-10-24 CN CN200810224902A patent/CN101726538A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376889B (en) * | 2010-08-06 | 2013-08-07 | 中国科学院微电子研究所 | Method for manufacturing semiconductor film |
| CN102376889A (en) * | 2010-08-06 | 2012-03-14 | 中国科学院微电子研究所 | Method for manufacturing semiconductor film |
| CN102373470A (en) * | 2010-08-06 | 2012-03-14 | 中国科学院微电子研究所 | Method for preparing compound semiconductor film material |
| CN102373470B (en) * | 2010-08-06 | 2014-05-28 | 中国科学院微电子研究所 | Method for preparing compound semiconductor film material |
| CN102774064A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院微电子研究所 | Sensitive adsorption film and its manufacturing method |
| CN102774064B (en) * | 2011-05-12 | 2015-04-01 | 中国科学院微电子研究所 | Sensitive adsorption film and its manufacturing method |
| CN102507733A (en) * | 2011-11-01 | 2012-06-20 | 中国科学院微电子研究所 | Surface acoustic wave gas sensor and manufacturing method thereof |
| CN102798663A (en) * | 2012-08-17 | 2012-11-28 | 天津理工大学 | SAW gas sensor applying dispersion interdigital transducer |
| CN103033539A (en) * | 2012-12-20 | 2013-04-10 | 中国科学院微电子研究所 | Preparation method for flexible substrate-based sensitive film for detecting gas at normal temperature |
| CN103091396A (en) * | 2013-01-15 | 2013-05-08 | 西安电子科技大学 | Diesel steam sensor |
| CN108052930A (en) * | 2018-01-02 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of array substrate, its production method, display panel and display device |
| CN110988113A (en) * | 2019-07-09 | 2020-04-10 | 天津中德应用技术大学 | Chemical warfare agent sensor and preparation method thereof |
| CN111157393A (en) * | 2020-01-11 | 2020-05-15 | 浙江师范大学 | Trace mass sensor signal detection circuit |
| CN111157393B (en) * | 2020-01-11 | 2022-07-12 | 浙江师范大学 | Trace mass sensor signal detection circuit |
| CN114204914A (en) * | 2022-02-21 | 2022-03-18 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
| CN114204914B (en) * | 2022-02-21 | 2022-06-14 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
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Open date: 20100609 |