CN102376889B - Method for manufacturing semiconductor film - Google Patents
Method for manufacturing semiconductor film Download PDFInfo
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- CN102376889B CN102376889B CN 201010247730 CN201010247730A CN102376889B CN 102376889 B CN102376889 B CN 102376889B CN 201010247730 CN201010247730 CN 201010247730 CN 201010247730 A CN201010247730 A CN 201010247730A CN 102376889 B CN102376889 B CN 102376889B
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- phthalocyanine zinc
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Abstract
The invention discloses a method for manufacturing a semiconductor film. In a manufacture process of a surface acoustic wave gas sensor, a carbon nano tube and phthalocyanine zinc mixed solution is dropped and sprayed on a delay line of a dual-delay line type oscillator, and dried in vacuum to form a sensitive film. Because phthalocyanine zinc is used as a sensitive material for trying to manufacture the sensitive film to ensure that a phthalocyanine material is used for possibly detecting NO2 gas at normal temperature, and compared with the pure phthalocyanine zinc sensor, the doped carbon nano tube/ phthalocyanine zinc sensor has sensitivity and detection quality which are improved to be a certain extend.
Description
Technical field
The present invention relates to sonic surface wave gas sensors device technology field, particularly a kind of by grinding the method for carbon nano tube-doped Phthalocyanine Zinc making semiconductive thin film.
Background technology
Surface acoustic wave (SAW) gas sensor has been compared a lot of excellent characteristic with the transducer of other types, has that volume is little, in light weight, precision is high, resolution is high, antijamming capability is strong, numerous characteristics such as highly sensitive, valid analysing range good linearity.Its basic functional principle mainly is the variation that causes SAW sensor electrical conductance and quality by the absorption that the sensitive membrane that the SAW device surface covers is treated side gas, thereby cause the change of the frequency of oscillation of SAW oscillator, realize monitoring and measurement to gas with this.Therefore want to produce the surface acoustic wave sensor device of high sensitivity and quality, wherein the design and fabrication of sensitive membrane part is special crucial.
But along with the fast development of sociometric technique and industry, the on-the-spot volume fraction of the atmosphere pollution of monitoring in real time often is low to moderate 10
-6Even 10
-9Level, this transducer that just requires to monitor dusty gas will have enough sensitivity and selectivity.The design and fabrication of sensitive membrane is a very important step in the surface acoustic wave sensor device fabrication processes, a transducer sensitivity, and the quality that detects quality is determined by the quality of sensitive membrane quality to a great extent.
From the eighties so far both at home and abroad with phthalocyanine material (based on CuPc) as detecting NO
2The sensitive material research of gas sensor has obtained great advance, but these transducer overwhelming majority need at high temperature to detect just to reach a good sensitivity, selectivity characteristic, high temperature not only influences the stablizing effect of sensor measurement, and can bring extra problems such as power loss, seem important especially so can produce the gas sensor of quick at normal temperatures, sensitive detection low concentration, this has higher requirement also for the making of film.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of and makes the method for semiconductive thin film by grinding carbon nano tube-doped Phthalocyanine Zinc.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of making semiconductive thin film, this method is in the manufacture process of sonic surface wave gas sensors, drip the mixed solution that is coated with carbon nano-tube and Phthalocyanine Zinc at a delay line of two delay line type oscillators, and vacuum drying and form sensitive membrane.
In the such scheme, a described delay line at two delay line type oscillators further comprises: the mixed solution of preparation carbon nano-tube and Phthalocyanine Zinc before dripping and being coated with the mixed solution of carbon nano-tube and Phthalocyanine Zinc.
In the such scheme, the mixed solution of described preparation carbon nano-tube and Phthalocyanine Zinc, specifically comprise: ground carbon nano-tube 10 to 30 minutes, 10 to 200mg ground carbon nano-tube are mixed with 100 to 500mg Phthalocyanine Zinc, join in 50 to 100ml the N-N dimethylformamide solution, and supersonic oscillations 60 minutes at normal temperatures, form the mixed solution of carbon nano-tube and Phthalocyanine Zinc.
In the such scheme, described mixed solution that is coated with carbon nano-tube and Phthalocyanine Zinc is to drip the mixed solution that is coated with 10 to 50 μ l in the sensitizing range of a delay line of two delay line type oscillators.
In the such scheme, described vacuum drying is drying at least 2 hours under vacuum environment.
(3) beneficial effect
Beneficial effect of the present invention is: because by Phthalocyanine Zinc is gone attempt to make sensitive membrane as sensitive material, make and use the phthalocyanine material to remove to detect NO under the normal temperature
2Gas becomes possibility, and doped carbon nanotubes/Phthalocyanine Zinc transducer compares with pure Phthalocyanine Zinc transducer, sensitivity and detect quality and also can improve.
Description of drawings
Fig. 1 is for to make the process chart of sonic surface wave gas sensors sensitive membrane according to the present invention;
Wherein, 1 is piezoelectric base unit (piezoelectric monocrystal or film), and 2 is interdigital transducer IDT (Au or Pt), and 3 is metallic film (Au or Pt etc.) the 4 chemical-sensitive films on the propagation path.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Phthalocyanine Zinc is as several frequently seen detection NO
2One of phthalocyanine material in the gas sensor is running into NO
2The variation of maximum conductivity is arranged during gas, so the present invention goes Phthalocyanine Zinc to attempt making sensitive membrane as sensitive material first, the carbon nano tube-doped Phthalocyanine Zinc that is about to grind detects NO as making
2The new material of sonic surface wave gas sensors sensitive membrane.
Carbon nano-tube has special tubulose, network structure, has very bigger serface, the carbon nano tube-doped Phthalocyanine Zinc of grinding is dissolved together, the sensitive membrane of producing by polymerization can make and the better adsorbed gas of Phthalocyanine Zinc also can be good at being dispersed in the solution by the carbon nano-tube after grinding.
The method of making semiconductive thin film provided by the invention is in the manufacture process of sonic surface wave gas sensors, drip the mixed solution that is coated with carbon nano-tube and Phthalocyanine Zinc at a delay line of two delay line type oscillators, and vacuum drying and form sensitive membrane.
A delay line of two delay line type oscillators drip be coated with the mixed solution of carbon nano-tube and Phthalocyanine Zinc before, further comprise: the mixed solution of preparation carbon nano-tube and Phthalocyanine Zinc, specifically comprise: ground carbon nano-tube 10 to 30 minutes, 10 to 200mg ground carbon nano-tube are mixed with 100 to 500mg Phthalocyanine Zinc, join in 50 to 100ml the N-N dimethylformamide solution, and supersonic oscillations 60 minutes at normal temperatures, form the mixed solution of carbon nano-tube and Phthalocyanine Zinc.
As shown in Figure 1, Fig. 1 specifically may further comprise the steps for to make the process chart of sonic surface wave gas sensors sensitive membrane according to the present invention:
Step 1: the carbon nano-tube that with mass ratio is 1: 10 is mixed at normal temperatures with Phthalocyanine Zinc, makes the mixed solution of carbon nano-tube and Phthalocyanine Zinc; Specifically comprise: ground carbon nano-tube 10 to 30 minutes, 10 to 200mg ground carbon nano-tube are mixed with 100 to 500mg Phthalocyanine Zinc, join in 50 to 100ml the N-N dimethylformamide solution mixed solution of formation carbon nano-tube and Phthalocyanine Zinc;
Step 2: adopt ultrasonator at normal temperatures to the mixed solution sonic oscillation of carbon nano-tube and Phthalocyanine Zinc 1 hour;
Step 3: drip the mixed solution that is coated with about 10 to 50ul left and right sides carbon nano-tube and Phthalocyanine Zinc in the sensitizing range of a delay line of two delay line type oscillators with micropipettor at normal temperatures;
Step 4: vacuumize: drying is at least two hours in the vacuum drying chamber about 60 ℃.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. method of making semiconductive thin film, it is characterized in that this method is in the manufacture process of sonic surface wave gas sensors, drip the mixed solution that is coated with carbon nano-tube and Phthalocyanine Zinc at a delay line of two delay line type oscillators, and vacuum drying and form sensitive membrane, wherein:
Before a described delay line at two delay line type oscillators drips and is coated with the mixed solution of carbon nano-tube and Phthalocyanine Zinc, further comprise: the mixed solution of preparation carbon nano-tube and Phthalocyanine Zinc, specifically comprise: ground carbon nano-tube 10 to 30 minutes, 10 to 200mg ground carbon nano-tube are mixed with 100 to 500mg Phthalocyanine Zinc, join in 50 to 100ml the N-N dimethylformamide solution, and supersonic oscillations 60 minutes at normal temperatures, form the mixed solution of carbon nano-tube and Phthalocyanine Zinc;
Described mixed solution that is coated with carbon nano-tube and Phthalocyanine Zinc is to drip the mixed solution that is coated with 10 to 50 μ l in the sensitizing range of a delay line of two delay line type oscillators.
2. the method for making semiconductive thin film according to claim 1 is characterized in that, described vacuum drying is drying at least 2 hours under vacuum environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010247730 CN102376889B (en) | 2010-08-06 | 2010-08-06 | Method for manufacturing semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010247730 CN102376889B (en) | 2010-08-06 | 2010-08-06 | Method for manufacturing semiconductor film |
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| CN102376889A CN102376889A (en) | 2012-03-14 |
| CN102376889B true CN102376889B (en) | 2013-08-07 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034083A (en) * | 2007-03-12 | 2007-09-12 | 清华大学 | Manufacturing method of sonic surface wave gas sensor |
| CN101507930A (en) * | 2009-03-27 | 2009-08-19 | 华南师范大学 | Metal phthalocyanine/carbon nano tube composite catalyst and its preparation method and lithium/thinly chloride battery using the catalyst |
| CN201348624Y (en) * | 2008-12-29 | 2009-11-18 | 南开大学 | Multi-channel surface acoustic wave chemical sensing device |
| CN101726538A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Acoustic surface wave gas sensor and manufacturing method thereof |
-
2010
- 2010-08-06 CN CN 201010247730 patent/CN102376889B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034083A (en) * | 2007-03-12 | 2007-09-12 | 清华大学 | Manufacturing method of sonic surface wave gas sensor |
| CN101726538A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Acoustic surface wave gas sensor and manufacturing method thereof |
| CN201348624Y (en) * | 2008-12-29 | 2009-11-18 | 南开大学 | Multi-channel surface acoustic wave chemical sensing device |
| CN101507930A (en) * | 2009-03-27 | 2009-08-19 | 华南师范大学 | Metal phthalocyanine/carbon nano tube composite catalyst and its preparation method and lithium/thinly chloride battery using the catalyst |
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| CN102376889A (en) | 2012-03-14 |
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