CN106443068B - Torsional differential quartz resonance acceleration sensor chip - Google Patents
Torsional differential quartz resonance acceleration sensor chip Download PDFInfo
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- CN106443068B CN106443068B CN201610946670.1A CN201610946670A CN106443068B CN 106443068 B CN106443068 B CN 106443068B CN 201610946670 A CN201610946670 A CN 201610946670A CN 106443068 B CN106443068 B CN 106443068B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
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Abstract
A torsional differential quartz resonance acceleration transducer chip comprises a peripheral silicon-based support frame, the silicon-based support frame is connected with a mass block through a support rotating shaft, a motion gap is arranged between the mass block and a support outer frame, a pair of through empty slots are arranged on the mass block near a central axis, a pair of resonance beams of double-ended quartz tuning forks are respectively arranged in the symmetrical empty slots, one end of each double-ended quartz tuning fork is fixed on the silicon-based support frame, the other end of each double-ended quartz tuning fork is fixed on the mass block, when acceleration acts on the mass block, the mass block can generate certain torsion under the support of the support rotating shaft, the quartz tuning fork deforms, the deformation causes the resonance frequency of the quartz tuning fork to change, the change is converted into a frequency signal through a frequency detection circuit to be output, thereby realizing the acceleration-frequency signal conversion of the transducer chip, the invention has the advantages of small volume, light weight, digital signal output, high resolution, excellent anti-interference performance and the like.
Description
Technical Field
The invention belongs to the technical field of resonant acceleration sensors, and particularly relates to a torsional differential quartz resonant acceleration sensor chip.
Background
The sensors commonly used at present and processed by the mems are mainly classified into piezoresistive type and capacitive type. The piezoresistive sensor senses acceleration through a resistor with piezoresistive effect and a beam-mass block with a certain structure, and the capacitive acceleration sensor senses acceleration through changing the area or distance of a capacitive plate. The two common acceleration sensors output analog signals, the post-processing circuit is complex, the sensitivity is low, analog-to-digital conversion errors exist, and the two common acceleration sensors cannot be directly combined with a high-precision digital system. Compared with piezoresistive and capacitive acceleration sensors, the output signal of the resonant acceleration sensor is a frequency signal, and the resonant acceleration sensor has the advantages of high precision and strong anti-interference capability. At present, a small number of resonant silicon micro acceleration sensors exist, and although the sensors output digital signals, the sensors are processed by silicon, so that the vibration frequency is low, the sensitivity is poor, and the quality factor Q value is low. Some accelerometers also adopt a differential structure, and due to the complexity of the structure, the processing technology is complicated, and the processing difficulty is high. In a word, the problems of analog output, low sensitivity and complex processing of the existing accelerometer generally exist.
Disclosure of Invention
In order to overcome the disadvantages of the conventional accelerometer, the present invention provides a torsional differential quartz resonant acceleration sensor chip, which has the advantages of digital signal output, high resolution, excellent anti-interference performance, small size and light weight.
In order to achieve the purpose, the invention adopts the technical scheme that:
a torsional differential type quartz resonance acceleration sensor chip comprises a silicon-based supporting frame 1 on the periphery, the silicon-based supporting frame 1 is connected with a mass block 2 in the silicon-based supporting frame through a supporting rotating shaft 5, a pair of first empty groove 4 and second empty groove 8 which are completely penetrated are arranged on the mass block 2 near the central axis, a first double-end quartz tuning fork 3 and a second double-end quartz tuning fork 9 are arranged in the first empty groove 4 and the second empty groove 8, one end of the first double-end quartz tuning fork 3 and one end of the second double-end quartz tuning fork 9 are fixed in a first mounting groove 6 on the silicon-based supporting frame 1, the other end of the first double-end quartz tuning fork 3 and the other end of the second double-end quartz tuning fork 9 are fixed in a second mounting groove 7 on the mass block 2, the first double-end quartz tuning fork 3 and the second double-end quartz tuning fork 9 are symmetrically arranged around the supporting rotating shaft 5, electrodes are arranged on the surfaces of a resonance beam, after power-on, the device can vibrate according to a preset mode.
The first empty groove 4 and the second empty groove 8 are symmetrical relative to the supporting rotating shaft 5, and the width of the first empty groove and the width of the second empty groove are more than 500 micrometers.
A 200-300 micron movement gap is formed between the mass block 2 and the silicon-based support frame 1.
The length of the supporting rotating shaft 5 is 200-300 microns, and the width of the supporting rotating shaft is 180-200 microns.
The depth of the first mounting groove 6 and the second mounting groove 7 is 250-300 microns, and the first mounting groove and the second mounting groove are close to the central axis.
The supporting rotating shaft 5 is superposed with the mass block 2 and the central axis of the silicon-based supporting frame 1.
The first and second double-ended quartz tuning forks 3 and 9 are positioned on one side of a diagonal line of the silicon-based support frame 1 and are arranged in parallel, and the vibration modes of the first and second double-ended quartz tuning forks 3 and 9 are the same.
The vibration modes of the two resonance beams 10 of the first double-end quartz tuning fork 3 or the second double-end quartz tuning fork 9 are opposite.
The silicon-based support frame 1, the mass block 2, the support rotating shaft 5, the first mounting groove 6, the second mounting groove 7, the first empty groove 4 and the second empty groove 8 are obtained by machining through a bulk silicon process.
The invention has the beneficial effects that:
the first and second double-ended quartz tuning forks 3 and 9 have inverse piezoelectric effect, when charges on two sides of the electrodes are alternately changed, the first and second double-ended quartz tuning forks 3 and 9 vibrate, and the natural vibration frequency of the first and second double-ended quartz tuning forks is influenced by the structural shape of the double-ended quartz tuning fork. When acceleration acts on the chip, the mass 2 supported by the support spindle 5 is twisted by a slight angle under the action of inertial force, and the first and second quartz tuning forks 3 and 9 are slightly deformed, so that the pair of quartz tuning forks are pulled and pressed to form a differential mode. The stress can cause the internal stress of the quartz tuning fork to change, the change of the stress causes the resonant frequency to change, the change is in direct proportion to the acceleration, the resonant frequencies of the first double-end quartz tuning fork 3 and the second double-end quartz tuning fork 9 are subtracted to obtain a differential frequency change value, and the acceleration can be obtained by detecting the differential frequency change value. The differential structure can reduce the influence of the input signal in the non-sensitive direction on the output result and improve the anti-interference capability of the accelerometer. The invention adopts the double-end quartz tuning fork as a sensitive material, and the substrate is supported by silicon, thereby having the advantages of small volume, light weight, digital signal output, high resolution, excellent anti-interference performance and the like.
Drawings
FIG. 1 is a schematic view of a silicon-based structure according to the present invention.
Fig. 2 is a schematic diagram of the sensor structure of the present invention.
3 fig. 3 3 3 is 3 a 3 schematic 3 sectional 3 view 3 taken 3 along 3 line 3 a 3- 3 a 3 of 3 fig. 3 2 3. 3
Fig. 4 shows the vibration mode of the first double-ended quartz tuning fork 3.
Detailed Description
The structure and operation of the present invention will be described in detail with reference to the accompanying drawings.
Referring to fig. 1 and 2, a torsional differential quartz resonant acceleration sensor chip comprises a silicon-based supporting frame 1 on the periphery, the silicon-based supporting frame 1 is connected with a mass block 2 inside the silicon-based supporting frame by a supporting rotating shaft 5, a pair of first empty slot 4 and second empty slot 8 are opened on the mass block 2 near the central axis, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are installed in the first empty slot 4 and the second empty slot 8, one end of the first double-ended quartz tuning fork 3 and one end of the second double-ended quartz tuning fork 9 are fixed in a first installation slot 6 on the silicon-based supporting frame 1 by organic glue, the other end of the first double-ended quartz tuning fork 3 and the other end of the second double-ended quartz tuning fork 9 are fixed in a second installation slot 7 on the mass block 2, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are symmetrically installed around the supporting rotating shaft 5, electrodes are arranged around the beam surfaces of the first double-ended, after being electrified, the sensor chip can vibrate according to a preset mode, the sensor chip senses the input of the acceleration through the mass block 2, and then the acceleration is converted into an electric signal through the differential change frequency of the first double-end quartz tuning fork 3 and the second double-end quartz tuning fork 9 through the frequency detection circuit, so that the sensing and the measurement of the acceleration are completed.
The first empty groove 4 and the second empty groove 8 are symmetrical relative to the supporting rotating shaft 5, and the width of the first empty groove and the width of the second empty groove are more than 500 micrometers.
When acceleration acts on the chip, according to the newton's second law, the mass 2 needs to generate a certain torsion under the action of inertia force, and the first and second double-ended quartz tuning forks 3 and 9 are slightly deformed, which causes the pair of quartz tuning forks to be pulled and pressed, thereby forming a differential form.
The length of the supporting rotating shaft 5 is about 200-300 microns, and the width of the supporting rotating shaft is about 200 microns.
Referring to fig. 3, the depth of the first mounting groove 6 and the second mounting groove 7 is 250-300 μm deeper than the plane of the silicon-based support frame 1 and the mass block 2, and is close to the central axis, so that the first dual-end quartz tuning fork 3 and the second dual-end quartz tuning fork 9 are located at the middle position of the thickness of the silicon wafer, and the vibration frequencies of the first dual-end quartz tuning fork 3 and the second dual-end quartz tuning fork 9 can reflect the magnitude of acceleration more objectively.
The supporting rotating shaft 5 is superposed with the mass block 2 and the central axis of the silicon-based supporting frame 1.
The first and second double-ended quartz tuning forks 3 and 9 are positioned on one side of a diagonal line of the silicon-based support frame 1 and are arranged in parallel, and the vibration modes of the first and second double-ended quartz tuning forks 3 and 9 are the same.
Referring to fig. 4, the two resonant beams 10 of the first dual-end quartz tuning fork 3 or the second dual-end quartz tuning fork 9 have opposite vibration modes, and can cancel the internal forces at the fixed end without causing additional influence on the mass 2.
The silicon-based support frame 1, the mass block 2, the support rotating shaft 5, the first mounting groove 6, the second mounting groove 7, the first empty groove 4 and the second empty groove 8 are obtained by machining through a bulk silicon process. The working principle of the invention is as follows: when acceleration acts on the sensor chip, the mass block 2 serves as a sensitive mass block of the acceleration of the sensor, according to Newton's second law, when the acceleration acts on the internal mass block 2, due to the action of inertia force, the internal mass block 2 can generate certain torsion under the support of the support rotating shaft 5, and further the first and second double-end quartz tuning forks 3 and 9 are deformed, the deformation causes the resonance frequency of the quartz beam to change, the change is converted into a frequency signal through the frequency detection circuit to be output, so that the acceleration-frequency signal conversion of the sensor chip is realized, and the digital measurement of the acceleration is completed.
Claims (5)
1. A twist differential quartz resonance acceleration sensor chip, includes peripheral silicon-based braced frame (1), and silicon-based braced frame (1) is connected through supporting pivot (5) rather than inside quality piece (2), its characterized in that: a pair of first empty groove (4) and a second empty groove (8) which are completely communicated are formed in the mass block (2) close to the central axis, the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9) are installed in the first empty groove (4) and the second empty groove (8), one end of the first double-end quartz tuning fork (3) and one end of the second double-end quartz tuning fork (9) are fixed in a first installation groove (6) in the silicon-based support frame (1), the other end of the first double-end quartz tuning fork (3) and the other end of the second double-end quartz tuning fork (9) are fixed in a second installation groove (7) in the mass block (2), the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9) are symmetrically installed around the support rotating shaft (5), electrodes are arranged on the periphery of the surfaces of the resonant beams of the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9;
the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9) are positioned on one side of a diagonal line of the silicon-based support frame (1) and are arranged in parallel, and the vibration modes of the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9) are the same;
the depths of the first mounting groove (6) and the second mounting groove (7) are 250-300 microns deeper than the planes of the silicon-based support frame (1) and the mass block (2), and are close to the central axis, so that the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9) are ensured to be positioned at the middle position of the thickness of a silicon wafer, and the vibration frequencies of the first double-end quartz tuning fork (3) and the second double-end quartz tuning fork (9) are enabled to be more objective and the magnitude of the reaction acceleration is enabled;
the supporting rotating shaft (5) is superposed with the mass block (2) and the central axis of the silicon-based supporting frame (1);
the vibration modes of the two resonance beams (10) of the first double-end quartz tuning fork (3) or the second double-end quartz tuning fork (9) are opposite;
the silicon-based support frame (1), the mass block (2), the support rotating shaft (5), the first mounting groove (6), the second mounting groove (7), the first empty groove (4) and the second empty groove (8) are obtained by machining through a bulk silicon process.
2. The torsional differential quartz resonant acceleration sensor chip of claim 1, characterized in that: the first empty groove (4) and the second empty groove (8) are symmetrical relative to the supporting rotating shaft (5), and the width of the first empty groove and the width of the second empty groove are more than 500 micrometers.
3. The torsional differential quartz resonant acceleration sensor chip of claim 1, characterized in that: a motion gap of 200-300 microns is formed between the mass block (2) and the silicon-based support frame (1).
4. The torsional differential quartz resonant acceleration sensor chip of claim 1, characterized in that: the length of the supporting rotating shaft (5) is 200-300 microns, and the width of the supporting rotating shaft is 180-200 microns.
5. The torsional differential quartz resonant acceleration sensor chip of claim 1, characterized in that: the depth of the first mounting groove (6) and the second mounting groove (7) is 250-300 microns, and the first mounting groove and the second mounting groove are close to the central axis.
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| CN107328954B (en) * | 2017-07-25 | 2019-12-31 | 西安交通大学 | Multistage step high overload resonant accelerometer chip |
| CN107686091B (en) * | 2017-07-25 | 2019-10-29 | 西安交通大学 | A kind of curve high overload resonance type micro accelerometer chip |
| CN113433345B (en) * | 2021-05-13 | 2022-12-20 | 西安航天精密机电研究所 | Integrated pendulum quartz resonant accelerometer structure and assembly method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4939935A (en) * | 1988-02-22 | 1990-07-10 | Societe D'applications Generales D'electricite Et De Mecanique | Pendular non-servoed tuning beam accelerometer |
| CN103217553A (en) * | 2012-01-19 | 2013-07-24 | 中国科学院电子学研究所 | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode |
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| JP2008304409A (en) * | 2007-06-11 | 2008-12-18 | Epson Toyocom Corp | Acceleration detecting unit and acceleration sensor |
| CN102778583B (en) * | 2012-07-12 | 2014-07-23 | 西安交通大学 | Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure |
| CN103063875A (en) * | 2012-12-25 | 2013-04-24 | 西安交通大学 | Silicon substrate differential motion quartz acceleration sensor |
| CN104374953A (en) * | 2014-11-25 | 2015-02-25 | 东南大学 | Split type differential silicon micro resonant accelerometer |
| CN105911309B (en) * | 2016-06-24 | 2019-01-29 | 东南大学 | Single anchor points support formula dual-axis silicon-micro resonance accelerometer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4939935A (en) * | 1988-02-22 | 1990-07-10 | Societe D'applications Generales D'electricite Et De Mecanique | Pendular non-servoed tuning beam accelerometer |
| CN103217553A (en) * | 2012-01-19 | 2013-07-24 | 中国科学院电子学研究所 | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode |
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Effective date of registration: 20210201 Address after: 710119 No.19 Chuanghui Road, Chang'an District, Xi'an City, Shaanxi Province Patentee after: Shaanxi Lin Tak inertia Electric Co.,Ltd. Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |