CN105021846A - Six-axis integrated miniature acceleration sensor and manufacturing method therefor - Google Patents
Six-axis integrated miniature acceleration sensor and manufacturing method therefor Download PDFInfo
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- CN105021846A CN105021846A CN201510390863.9A CN201510390863A CN105021846A CN 105021846 A CN105021846 A CN 105021846A CN 201510390863 A CN201510390863 A CN 201510390863A CN 105021846 A CN105021846 A CN 105021846A
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Abstract
The invention discloses a six-axis integrated miniature acceleration sensor and a manufacturing method therefor. An upper cover plate, a lower cover plate and a sensing chip are connected together through bonding. The sensing chip is formed in a manner that four beams led out from diagonal lines of a fixed outer frame are connected with a central small island, thereby enabling the central small island of the outer frame, the beams on the diagonal lines of the outer frame and the outer frame to form an integrated fixed frame. Each inertia sensing unit consists of an inertia mass, a structure supporting beam, and sensitive miniature beams. Each inertia mass is trapezoid, and the central part of the upper bottom side of each inertia mass is provided with the corresponding structure supporting beam which extends to the lower bottom side. Two sides of each structure supporting beam are provided with the sensitive miniature beams, thereby enabling the upper bottom side of the corresponding inertia mass to be connected with the central small island of the fixed frame. Because the sensitive miniature beams are small in structure, main stress is concentrated during the loading of the sensitive chip. Moreover, a simple stress state of direct pulling and pushing is easy to form, thereby facilitating the decoupling between axes. The sensor is simple and compact in structure, and is easy to machine.
Description
Technical field
The present invention relates to silicon micro accerometer field, particularly a kind of pressure resistance type six axle high range micro-acceleration sensor and preparation method thereof.
Background technology
Acceleration transducer refers to a kind of sensor can measuring object of which movement acceleration.Sensitivity, the linearity, inter-axis coupling degree, response speed, response band width, stability etc. are its main performance index.And micro-acceleration sensor belongs to the one of acceleration transducer, it is the important component part of the MEMS (micro electro mechanical system) (MEMS) that new development is got up, along with the development of semi-conductor industry, the particularly development of MEMS technology, increasing high-performance, low energy consumption, cheap micro-acceleration sensor are applied to all trades and professions gradually, constantly change the live and work mode of people.And high-range acceleration transducer is mainly used in the fields such as military and aviation at present as a kind of special inertia measurement device.Along with the development of Penetrator Weapon system in recent years and the further investigation to blast impulse phenomenon, people also improve-require sensor gradually for the performance of high-range acceleration transducer wide range, large responsive bandwidth, high natural frequency, can respond by acceleration signals accurately and rapidly.
The high-range acceleration transducers used such as current research Penetrator Weapon both domestic and external are substantially all single shafts, even and if what have multiaxis is also the simple combination of multiple single shaft, so not only volume is comparatively large, but also can introduce alignment error.Patent CN 101692099 report a kind of have zero waft compensate piezoresistive double-shaft accelerometer, although solve the temperature drift problems of pressure resistance type, and there is comparatively high natural frequency, but it is the combination of the sensitive element of two single shafts, and also can only survey the motion of both direction, and six-freedom degree motion also has 4 motions to be measured in object space, this comprehensive measurement that cannot meet the researchs such as Penetrator Weapon, the requirement accurately controlled.
Summary of the invention
The object of the invention is to overcome above-mentioned prior art not enough, a kind of six axle integral type high range micro-acceleration sensors and preparation method thereof are provided.For the problem of existing high g micro-acceleration gauge, the present invention is simple and compact for structure, and be easy to batch machining production, bandwidth, applied widely, inter-axis coupling is little.
For solving the problems of the technologies described above, the present invention by the following technical solutions.
A kind of six axle integral type high range micro-acceleration sensors, it comprises the sensitive chip linked together by bonding, upper cover plate and lower cover three part, described sensitive chip is made up of four sensing units, each sensing unit comprises support structure beam, responsive micro-beam, inertial mass and fixed frame, described each inertial mass is connected with island part in the middle of fixed frame with two micro-beams of sensitivity by a root architecture brace summer, composition semi-girder-mass system, described two micro-beams of sensitivity are symmetrical centered by support structure beam, between quality of connection block and the middle island of fixed frame, the micro-beam of described each sensitivity all there is the sensitive resistance that adulterates carry out sensing between six axially-movables and decoupling zero in order to form Wheatstone bridge.
Described fixed frame by fixing housing, housing diagonal line, middle island form; Housing diagonal line mediates, and will fix housing and be connected with middle island, its short transverse consistent size; Described middle island is the square column in the middle of fixed frame.
Described inertial mass entirety is trapezoidal column; In the middle of described fixed frame, island is fixed frame intermediate structure, and it is connected with fixed frame housing by fixed frame housing diagonal line, and is connected with inertial mass by support structure beam, responsive micro-beam.
Described fixed frame is provided with eight compensating resistances, described compensating resistance by parallel with sensitive resistance, connecting forms 6 groups of Wheatstone bridges jointly.
Described support structure beam length direction is perpendicular to the upper and lower base of inertial mass, and be positioned at the centre of trapezoidal inertial mass, be connected and fixed island structure and trapezoidal inertial mass in the middle of framework, and extend close to trapezoidal mass bottom place, the thickness of described support structure beam is the same with inertial mass. always
A kind of six axle integral type high range micro-acceleration sensor method for makings,
1) select N-type soi wafer, structural sheet silicon thickness is 10 ± 1 μm, and middle silicon dioxide separation layer thickness is 1 ~ 1.5 μm, and substrate layer silicon is 500 μm, behind cleaning silicon chip surface, adopts the method for thermal oxide to prepare one deck 200 ~ 300nm SiO in above and below
2film;
2) by front side of silicon wafer photoetching, the SiO exposed then is removed with buffered hydrofluoric acid solution BOE liquid
2, and to remove SiO
2place diffuses to form doped resistor for window carries out B: sensitive resistance, reference resistance;
3) buffered hydrofluoric acid solution BOE washes away upper epidermis SiO2, then proceeds oxide thin layer silicon chip, repeats step 2), make ohmic contact regions unlike heavy doping boron;
4) metallize; In front side of silicon wafer photoetching, and prepare gold wire by sputtering-stripping method; Then, then be heated to 363 ± 5 DEG C, keep 20 ~ 30min to form stable local gold silicon two-phase;
5) front beam shape etching: front photoetching, sputtering-stripping method prepares graphical aluminium masking film, and then inductively coupled plasma etching ICP etches the shape of support structure beam, responsive micro-beam mass, and thickness is device layer thickness 10 ± 1 μm;
6) silicon chip back side photoetching, the Tetramethylammonium hydroxide of 20% ~ 22% massfraction goes out siliceous gauge block zone of action at 85 ~ 90 DEG C of water-bath wet etchings;
7) silicon chip back side photoetching, sputtering-stripping method prepares graphical aluminium film, and then reaction and plasma etching RIE etches inertial mass, and etch thicknesses is the thickness of substrate silicon layer;
8) buffered hydrofluoric acid solution BOE corrodes girder construction place silicon chip 1 ~ 1.5 μm of SiO
2separation layer release girder construction;
9) the one side photoetching of upper cover plate, and etch mass upwards zone of action with buffered hydrofluoric acid solution BOE, zone of action height is also for considering the height after damping characteristic;
10) method of silicon chip anode linkage and upper cover plate, lower cover are tightly connected, make the sandwich structure of glass-silicon chip-glass;
11) device package:
A. adopt mechanical dicing saws by dicing lane scribing, make sensitive accelerometers chip; B. said chip AB sticker is entered the ceramic square shell of encapsulation; C. with gold wire bonder by pad one_to_one corresponding bonding on thin gold wire and sensitive chip; D. ceramic cartridge is loaded onto Dew Point cap, and seal with AB glue.
Described upper cover plate, lower cover material are U.S. CORNING 7740 glass or German Xiao Te BF33 anode linkage glass.
Compared with prior art, the invention has the advantages that:
1) structure of the present invention, technique and sensing circuit are very simple.By sensing unit that is simple, symmetrical, ingehious design, and the Wheatstone bridge as sensing circuit of correspondence, can the full decoupling of six the axial freedom acceleration in implementation space, its theoretical analysis inter-axis coupling degree is zero.
2) the present invention utilizes soi wafer to make sensor, and the gauge of micro-beam can be controlled accurately.In addition, due to insulation, the insulating characteristics of soi wafer, the sensor that this technique makes also has low environment noise, better heat-resisting quantity.
3) the support structure beam of the large rigidity of utilization of the present invention and mass stack pile makes the natural frequency > 18KHz of the whole chip of preferred size, makes it have very wide frequency band, adapts to wide; In addition, it also makes sensor still can normally work linearly under high range effect, its z-axis, x/y direction of principal axis axis accelerometer range reach 100,000g respectively
n, 10,000g
n, wherein g
nfor unit gravity acceleration value.
4) all doped resistors of making on sensitive chip of the present invention, comprise sensitive resistance and reference resistance is made by same technique, and its physical property similarity is high, and temperature compensation performance is better, and zero point drift is less.
5) appropriate design mass free gap of the present invention, and bonding packaging under adopting certain vacuum condition, to obtain the damping ratio of about 0.7, sensor has higher natural frequency in addition, makes sensor have good dynamic property and larger Q value.
It is simple that method for making of the present invention has technique, and easy and simple to handle, working (machining) efficiency is high, good reliability, the feature of easy mass production.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention;
Fig. 2 is the structural representation of acceleration sensitive chip of the present invention;
Fig. 3 is sensitive resistance and reference resistance pieces of cloth figure in the present invention,
Fig. 4 is decoupling zero schematic diagram in the present invention:
Time figure (a) is for loading z-axis to linear acceleration Az, sensitive chip simplifies stress deformation figure;
Time figure (b) is for loading y-axis to linear acceleration Ay, sensitive chip simplifies stress deformation figure;
Time figure (c) is for loading x-axis to linear acceleration Ax, sensitive chip simplifies stress deformation figure;
Time figure (d) is for loading z-axis to angular acceleration Ez, sensitive chip simplifies stress deformation figure;
Time figure (e) is for loading x-axis to angular acceleration Ex, sensitive chip simplifies stress deformation figure;
Time figure (f) is for loading y-axis to angular acceleration Ey, sensitive chip simplifies stress deformation figure;
G table is six axial accelerations/angular acceleration sensing and decoupling zero table;
Fig. 5 is decoupling circuit schematic diagram in the present invention:
The decoupling zero sensing circuit figure that figure (a) is x-axis and y-axis axial line acceleration and angular acceleration;
The detailed circuit figure that figure (b) senses to linear acceleration decoupling zero for z-axis,
Figure (c) is for z-axis is to linear acceleration decoupling zero sensing integrated circuit figure;
Figure (b) and (c) figure forms z-axis jointly to linear acceleration decoupling zero sensing circuit figure,
The detailed circuit figure that figure (d) senses to decoupling zero for z-axis,
The integrated circuit figure that figure (e) senses to decoupling zero for z-axis.
Figure (d) and (e) figure forms z-axis jointly to angular acceleration decoupling zero sensing circuit figure,
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
1. one-piece construction:
As shown in Figure 1, Figure 2, Figure 3 shows, it comprises the sensitive chip 3, upper cover plate 1 and the lower cover 2 that are linked together by bonding; Described sensitive chip 3 is made up of four sensing units, and each sensing unit comprises support structure beam 4, responsive micro-beam 5, inertial mass 6 and fixed frame 7; Described each inertial mass 6 is connected with fixed frame 7 middle island part with two micro-beams of sensitivity 5 by a root architecture brace summer 4, composition semi-girder-mass system; Described two micro-beams 5 are symmetrically distributed between mass 6 and the middle island of fixed frame 7 with support structure beam 4, the micro-beam 5 of described each sensitivity all there is the sensitive resistance 9 that adulterates, the housing of described fixed frame is evenly distributed with 8 doping type reference resistances 8, jointly form some Wheatstone bridges to carry out sensing between six axially-movables and decoupling zero in order to sensitive resistance, see Fig. 5.Described support structure beam 4 rigidity is comparatively large, in order to improve the rigidity of associative perception geodesic structure, and then promotes natural frequency, bandwidth of operation and response speed.Wherein support structure beam 4, responsive micro-beam 5 and inertial mass 6 are structure; Sensitive resistance 9 and reference resistance 8 are that light boron doping process makes semiconductor doping resistance.In Fig. 3, two sensitive resistances in each inertia sensing unit are distributed in the side away from intermediate structure brace summer on responsive micro-beam; On beam length direction, sensitive resistance is distributed near inertial mass or the side near middle " island " structure of fixed frame; Reference resistance is then evenly distributed on the vicinity, housing four right angles of fixed frame.
As shown in Figure 3, the present invention devises 16 doped resistors altogether, wherein 8 sensitive resistances, 9,8 reference resistances 8.Described 16 doped resistors are same step process and make, to ensure homogeneity; The form of resistance is yi word pattern, and complex form, to improve sensitivity as far as possible, reduces the degree of coupling.
Six axle integral type high range micro-acceleration sensors, it is of a size of: 1) overall dimension is: the wide * of long * is high=3.4*3.4*0.5mm
3; Responsive micro-beam is of a size of: the wide * of long * is high=and * 0.04*0.04*0.01mm
3; Support structure beam size: the wide * of long * is high=1.04*0.06*0.49mm
3; The volume of single inertial mass is: equivalent floorage * is high=and ((2.42+0.34) * 1.04/2-1.04*0.16) * 0.49mm
3;
2. six axial acceleration decoupling zeros.
As shown in Fig. 3, Fig. 4 and Fig. 5, when along Z axis forward loaded line acceleration A z time, four masses keep motionless due to inertia effect, and fixed frame is consistent with extraneous acceleration, and at this moment all sensitive resistance states are tension.As Fig. 4, a.; When along y-axis forward loaded line acceleration A y time, because support structure beam 4 thickness is the same with inertial mass 6, rigidity is comparatively large and in its middle, so the 4 micro-beams of sensitivity being parallel to x-axis are stressed hardly.4 micro-beams only perpendicular to x-axis are stressed owing to being out of shape, and resistance R1.1, resistance R3.1 pressurized, resistance R1.2, resistance R3.2 tension, as shown in Fig. 4, b.; When along x-axis forward loaded line acceleration A x, in like manner, mass 6 keeps motionless due to inertia, and only have resistance R2.1, resistance R4.1 tension, resistance R2.2, resistance R4.2 pressurized, as Fig. 4, c.Shown in; When loading angular acceleration Ez along z-axis forward, the micro-beam 5 of all sensitivities in xoy plain bending, will cause thus: resistance R1.1, resistance R4.1, resistance R2.2, resistance R3.2 pressurized, resistance R1.2, resistance R4.2, resistance R2.1, resistance R3.1 tension, as Fig. 4, d.Shown in; In time loading angular acceleration Ex along x-axis forward, due to the symmetry of structure, be parallel to micro-beam almost unstressed induction of x-axis, micro-beam perpendicular to x-axis then shows side tension: resistance R4.1, resistance R4.2, opposite side is subject to piezoresistance R2.1, resistance R2.2, as shown in Fig. 4, e.; When loading angular acceleration Ey along y-axis forward, in like manner, resistance R1.1, resistance R1.2 tension, resistance R3.1, resistance R3.2 pressurized, all the other do not stress substantially, as shown in Fig. 4, f.
To sum up, on the micro-beam 5 of sensitivity after six axial accelerations loadings, the stressing conditions at sensitive resistance 9 place can be summarized as shown in Fig. 4, g. decoupling zero table.Its feature is: load corresponding to Ax, Ay, Ez, two sensitivity micro-beam sensitive resistance place stress states of same mass are that size is the same, and direction is contrary.And when corresponding to Ax, Ay loading, micro-stress beam state corresponding with sequence number " neatly ", as resistance R1.1 is consistent with resistance R4.1 stress state with resistance R3.1 and resistance R2.1.And correspond to Ez loading, be then that resistance R1.1 is the same with resistance R2.2 stress state with resistance R3.2 and resistance R4.1; Load corresponding to AZ, Ex, Ey, two sensitivity micro-beam sensitive resistance place stress states of same mass are identical; And when corresponding to Ex, Ey loading, all sensitive resistance stress vector sums must be zero when ignoring other errors, and non-vanishing when Az loads.
According to These characteristics, as shown in Figure 5, Ay reads in electric bridge design decoupling circuit figure, and resistance R1.1 and resistance R3.1 and resistance R1.2 and resistance R3.2 is to arm, and this two couple is adjacent arms each other; Ax reads in electric bridge, and resistance R2.1 and resistance R4.1 and resistance R2.2 and resistance R4.2 is to arm, and this two couple is adjacent arms each other; Ey reads in electric bridge, and resistance R1.1 and resistance R1.2 and resistance R3.1 and resistance R3.2 is to arm, and this two couples phase adjacent arms each other; Az reads in electric bridge, resistance R1.1 and resistance R1.2, resistance R2.1 and resistance R2.2, resistance R3.1 and resistance R3.2 and resistance R4.1 and resistance R4.2 are to arm, add 8 reference resistances 8, common composition 4 Hui Sitong half-bridges, export Vout-Az1, Vout-Az2, Vout-Az3, Vout-Az4 respectively respectively.Be together in series finally by by the output of 4 half-bridges, export to linear acceleration response as z-axis; Ez reads in electric bridge, resistance R1.1 and resistance R3.2 and resistance R1.2 and resistance R3.1 is right, and output Vout-Ez1, resistance R2.1 and resistance R4.2 and resistance R2.2 and resistance R4.1 is right, export Vout-Ez2, the response as z-axis to angular acceleration that the output of two full-bridges is together in series exports.
3. the method for making of a kind of six axle integral type high range micro-acceleration sensors of the present invention is:
1) select N-type soi wafer, structural sheet silicon thickness is 10 ± 1 μm, and middle silicon dioxide separation layer thickness is 1 ~ 1.5 μm, and substrate layer silicon is 500 μm, behind cleaning silicon chip surface, adopts the method for thermal oxide to prepare one deck 200 ~ 300nm SiO in above and below
2film;
2) by front side of silicon wafer photoetching, the SiO exposed then is removed with buffered hydrofluoric acid solution BOE liquid
2, and to remove SiO
2place diffuses to form doped resistor for window carries out B: sensitive resistance 9, reference resistance 10;
3) buffered hydrofluoric acid solution BOE washes away upper epidermis SiO2, then proceeds oxide thin layer silicon chip, repeats step 2), make ohmic contact regions unlike heavy doping boron (B);
4) metallize; In front side of silicon wafer photoetching, and prepare gold wire by sputtering-stripping method; Then, then be heated to 363 ± 5 DEG C, keep 20 ~ 30min to form stable local gold silicon two-phase;
5) front beam shape etching: front photoetching, sputtering-stripping method prepares graphical aluminium masking film, then inductively coupled plasma etching (ICP) etches the shape of support structure beam 4, responsive micro-beam 5 mass 6, and thickness is device layer thickness 10 ± 1 μm;
6) silicon chip back side photoetching, the Tetramethylammonium hydroxide of 20% ~ 22% massfraction goes out siliceous gauge block zone of action at 85 ~ 90 DEG C of water-bath wet etchings,
7) silicon chip back side photoetching, sputtering-stripping method prepares graphical aluminium film, and then reaction and plasma etching RIE etches inertial mass 6, and etch thicknesses is the thickness of substrate silicon layer;
8) buffered hydrofluoric acid solution BOE corrodes girder construction place silicon chip 1 ~ 1.5 μm of SiO
2separation layer release girder construction;
9) the one side photoetching of upper cover plate, and etch mass upwards zone of action with buffered hydrofluoric acid solution BOE, zone of action height is also for considering the height after damping characteristic;
10) method of silicon chip anode linkage and upper cover plate 1, lower cover 2 are tightly connected, make the sandwich structure of glass-silicon chip-glass;
11) device package:
A. adopt mechanical dicing saws by dicing lane scribing, make sensitive accelerometers chip; B. said chip AB sticker is entered the ceramic square shell of encapsulation; C. with gold wire bonder by pad one_to_one corresponding bonding on thin gold wire and sensitive chip; D. ceramic cartridge is loaded onto Dew Point cap, and seal with AB glue.
Claims (7)
1. an axle integral type micro-acceleration sensor, it is characterized in that: it comprises the sensitive chip (3) linked together by bonding, upper cover plate (1) and lower cover (2) three part, described sensitive chip (3) is made up of four sensing units, each sensing unit comprises support structure beam (4), responsive micro-beam (5), inertial mass (6) and fixed frame (7), described each inertial mass (6) is connected with island part in the middle of fixed frame (7) with two micro-beams of sensitivity (5) by a root architecture brace summer (4), composition semi-girder-mass system, described two micro-beams of sensitivity (5) are symmetrical centered by support structure beam (4), between quality of connection block (6) and the middle island of fixed frame (7), the micro-beam of described each sensitivity (5) all there is the sensitive resistance (9) that adulterates carry out sensing between six axially-movables and decoupling zero in order to form Wheatstone bridge.
2. a kind of six axle integral type micro-acceleration sensors according to claim 1, is characterized in that: described fixed frame (7) is made up of fixing housing, housing diagonal line, middle island; Housing diagonal line mediates, and will fix housing and be connected with middle island, its short transverse consistent size; Described middle island is the square column in the middle of fixed frame.
3. a kind of six axle integral type micro-acceleration sensors according to claim 1, is characterized in that: described inertial mass (6) entirety is trapezoidal column; In the middle of described fixed frame (7), island is fixed frame (7) intermediate structure, it is connected with fixed frame (7) housing by fixed frame (7) housing diagonal line, and is connected with inertial mass (6) by support structure beam (4), responsive micro-beam (5).
4. a kind of six axle integral type micro-acceleration sensors according to claim 1, it is characterized in that: described fixed frame (7) is provided with eight compensating resistances (8), described compensating resistance (8) by parallel with sensitive resistance (9), connecting forms 6 groups of Wheatstone bridges jointly.
5. a kind of six axle integral type micro-acceleration sensors according to claim 1, it is characterized in that: described support structure beam (4) length direction is perpendicular to the upper and lower base of inertial mass (6), and be positioned at the centre of trapezoidal inertial mass (6), be connected and fixed island structure and trapezoidal inertial mass (6) in the middle of framework (7), and extend close to trapezoidal mass (6) bottom place, the thickness of described support structure beam (4) is the same with inertial mass (6). always
6. six axle integral type micro-acceleration sensor method for makings, is characterized in that:
1) select N-type soi wafer, structural sheet silicon thickness is 10 ± 1 μm, and middle silicon dioxide separation layer thickness is 1 ~ 1.5 μm, and substrate layer silicon is 500 μm, behind cleaning silicon chip surface, adopts the method for thermal oxide to prepare one deck 200 ~ 300nmSiO in above and below
2film;
2) by front side of silicon wafer photoetching, the SiO exposed then is removed with buffered hydrofluoric acid solution BOE liquid
2, and to remove SiO
2place diffuses to form doped resistor for window carries out B: sensitive resistance (9), reference resistance (10);
3) buffered hydrofluoric acid solution BOE washes away upper epidermis SiO2, then proceeds oxide thin layer silicon chip, repeats step 2), make ohmic contact regions unlike heavy doping boron;
4) metallize; In front side of silicon wafer photoetching, and prepare gold wire by sputtering-stripping method; Then, then be heated to 363 ± 5 DEG C, keep 20 ~ 30min to form stable local gold silicon two-phase;
5) front beam shape etching: front photoetching, sputtering-stripping method prepares graphical aluminium masking film, then inductively coupled plasma etching ICP etches the shape of support structure beam (4), responsive micro-beam (5) mass (6), and thickness is device layer thickness 10 ± 1 μm;
6) silicon chip back side photoetching, the Tetramethylammonium hydroxide of 20% ~ 22% massfraction goes out siliceous gauge block zone of action at 85 ~ 90 DEG C of water-bath wet etchings;
7) silicon chip back side photoetching, sputtering-stripping method prepares graphical aluminium film, and then reaction and plasma etching RIE etches inertial mass (6), and etch thicknesses is the thickness of substrate silicon layer;
8) buffered hydrofluoric acid solution BOE corrodes girder construction place silicon chip 1 ~ 1.5 μm of SiO
2separation layer release girder construction;
9) the one side photoetching of upper cover plate, and etch mass upwards zone of action with buffered hydrofluoric acid solution BOE, zone of action height is also for considering the height after damping characteristic;
10) method of silicon chip anode linkage and upper cover plate (1), lower cover (2) are tightly connected, make the sandwich structure of glass-silicon chip-glass;
11) device package:
A. adopt mechanical dicing saws by dicing lane scribing, make sensitive accelerometers chip; B. said chip AB sticker is entered the ceramic square shell of encapsulation; C. with gold wire bonder by pad one_to_one corresponding bonding on thin gold wire and sensitive chip; D. ceramic cartridge is loaded onto Dew Point cap, and seal with AB glue.
7. six axle integral type micro-acceleration sensor method for makings, is characterized in that: described upper cover plate (1), lower cover (2) material are U.S. CORNING 7740 glass or German Xiao Te BF33 anode linkage glass.
Priority Applications (1)
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| CN107643424A (en) * | 2017-09-21 | 2018-01-30 | 中国电子科技集团公司第四十九研究所 | A kind of pressure resistance type MEMS acceleration chips and preparation method thereof |
| CN110371921A (en) * | 2019-07-17 | 2019-10-25 | 西安交通大学 | Twin shaft pressure drag acceleration sensor chip and preparation method thereof in a kind of face |
| CN112955752A (en) * | 2018-09-13 | 2021-06-11 | 离子地球物理学公司 | Multi-axis single mass accelerometer |
| CN113348369A (en) * | 2019-04-19 | 2021-09-03 | 日商爱和谊日生同和保险公司 | Collision determination method, collision determination system, and computer program |
| CN113697759A (en) * | 2021-07-09 | 2021-11-26 | 中国电子科技集团公司第十三研究所 | MEMS inertial sensor based on flexible substrate and preparation method |
| CN116519977A (en) * | 2023-07-05 | 2023-08-01 | 河北科昕电子科技有限公司 | Inertial sensor of miniature six-axis integrated accelerometer gyroscope |
| CN117572021A (en) * | 2024-01-17 | 2024-02-20 | 中国工程物理研究院电子工程研究所 | Sensitive structure and acceleration sensor |
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| CN106324282A (en) * | 2016-08-16 | 2017-01-11 | 中国科学院声学研究所 | Accelerometer system, accelerometer probe, and preparation method for accelerometer probe |
| CN107643424A (en) * | 2017-09-21 | 2018-01-30 | 中国电子科技集团公司第四十九研究所 | A kind of pressure resistance type MEMS acceleration chips and preparation method thereof |
| CN107643424B (en) * | 2017-09-21 | 2020-03-17 | 中国电子科技集团公司第四十九研究所 | Piezoresistive MEMS acceleration chip and manufacturing method thereof |
| CN112955752A (en) * | 2018-09-13 | 2021-06-11 | 离子地球物理学公司 | Multi-axis single mass accelerometer |
| CN113348369A (en) * | 2019-04-19 | 2021-09-03 | 日商爱和谊日生同和保险公司 | Collision determination method, collision determination system, and computer program |
| CN110371921A (en) * | 2019-07-17 | 2019-10-25 | 西安交通大学 | Twin shaft pressure drag acceleration sensor chip and preparation method thereof in a kind of face |
| CN110371921B (en) * | 2019-07-17 | 2022-04-05 | 西安交通大学 | In-plane double-shaft piezoresistive acceleration sensor chip and preparation method thereof |
| CN113697759A (en) * | 2021-07-09 | 2021-11-26 | 中国电子科技集团公司第十三研究所 | MEMS inertial sensor based on flexible substrate and preparation method |
| CN116519977A (en) * | 2023-07-05 | 2023-08-01 | 河北科昕电子科技有限公司 | Inertial sensor of miniature six-axis integrated accelerometer gyroscope |
| CN116519977B (en) * | 2023-07-05 | 2023-10-17 | 河北科昕电子科技有限公司 | Inertial sensor of miniature six-axis integrated accelerometer gyroscope |
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| CN117572021B (en) * | 2024-01-17 | 2024-04-05 | 中国工程物理研究院电子工程研究所 | Sensitive structure and acceleration sensor |
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