CN109001490A - High-sensitivity torsional pendulum type silicon micro-accelerometer and preparation method thereof - Google Patents
High-sensitivity torsional pendulum type silicon micro-accelerometer and preparation method thereof Download PDFInfo
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- CN109001490A CN109001490A CN201810650974.2A CN201810650974A CN109001490A CN 109001490 A CN109001490 A CN 109001490A CN 201810650974 A CN201810650974 A CN 201810650974A CN 109001490 A CN109001490 A CN 109001490A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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Abstract
The invention discloses a high-sensitivity torsion pendulum type silicon micro-accelerometer and a preparation method thereof, wherein the silicon micro-accelerometer comprises a silicon substrate and a silicon sensitive structure which are connected into a whole, the silicon sensitive structure comprises a stress release structure, two pairs of supporting beams, a pair of coupling sensitive mass blocks and a pair of anchor points, the pair of coupling sensitive mass blocks are symmetrically arranged, each coupling sensitive mass block is respectively connected with the anchor points through an independent supporting beam and is connected and coupled with the stress release structure through another independent supporting beam, and the mass center of each coupling sensitive mass block is positioned at the midpoint of the supporting beam connected with the anchor points; the preparation method adopts dry etching preparation. The invention has the advantages of high space utilization rate of devices, large effective detection area of the sensitive mass block, high sensitivity, high yield, low cost, high processing quality, good processing robustness and wide application range.
Description
Technical field
The present invention relates to silicon micro-sensor technologies, and in particular to a kind of high sensitivity Pendulous Micromachined Silicon Accelerometer and its system
Preparation Method.
Background technique
Accelerometer is mainly used for measuring the kinematic parameter in moving object relative inertness space, is that the modern life is indispensable
Senser element.Compared with traditional acceleration, MEMS micro-acceleration gauge have it is small in size, low in energy consumption, be easy to mass processing
The features such as, thus the hot spot studied both at home and abroad is rapidly become, performance also in the continuous improvement, is widely used in military civilian neck
Domain.
Currently, external uniaxial micro-acceleration gauge product is mature and is widely used, the country is for list
The research and development dynamics of axis micro-acceleration gauge is also constantly increasing, and has had part Experiment room to develop the higher work of performance
Journey model machine, but how the micro- acceleration of single shaft that structure is simple, manufacture is efficient, performance is brilliant is explored in combination existing design technology manufacture
Degree meter has important practical significance.The micro- torsional accelerometer of silicon has small in size, high reliablity, impact resistance etc. a series of excellent
Point, thus the most attention by various countries, are competitively developed, and are gradually applied in the fields such as guidance and automotive check at present.But spirit
Sensitivity is low, noise is big, temperature characterisitic and robustness are limited by self structure.
The Chinese patent literature that number of patent application is 201410825011.3 and 201410606833.2 discloses two kinds of torsions
Pendulum-type micro-mechanical accelerometer, but the sensitive-mass block of above two acceleration micro- in the prior art passes through cantilever beam and support
Beam connection, the fixed form for being placed outside using anchor point silicon-sensitive structure, that there are device space utilization rates is low, sensitive-mass block is effective
The problem that area of detection is small, sensitivity is low；And two schemes are all made of wet corrosion technique preparation, there are device areas greatly,
The problems such as yield rate is low and processing cost is high.
Summary of the invention
The technical problem to be solved in the present invention: in view of the above problems in the prior art, a kind of device space utilization rate is provided
High, the effective area of detection of sensitive-mass block is greatly, high sensitivity, high yield rate, at low cost, processing quality is high, processing robustness is good,
Highly sensitive Pendulous Micromachined Silicon Accelerometer having a wide range of application and preparation method thereof.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
The present invention provides a kind of highly sensitive Pendulous Micromachined Silicon Accelerometer, including the silicon substrate and silicon-sensitive knot being connected as one
Structure, the silicon-sensitive structure include strain relief, two pairs of supporting beams, a pair of of coupling sensitive-mass block and a pair of of anchor point,
It is arranged symmetrically between a pair of coupling sensitive-mass block, and each coupling sensitive-mass block passes through an individually support respectively
Beam is connected with anchor point, connects coupling with strain relief by another individual supporting beam, each coupling sensitive-mass
The mass center of block is located at the midpoint for the supporting beam being connected with anchor point, and the anchor point is located at the middle part of coupling sensitive-mass block；The silicon
Substrate be equipped with capacitor board component and lead electrode component, the capacitor board component be respectively arranged on coupling sensitive-mass block below and
It is arranged with sensitive-mass block gap is coupled, the lead electrode component is connected with capacitor board component.
Preferably, the cross section of two pairs of supporting beams is rectangle.
Preferably, the silicon substrate is equipped with bonding boss, each anchor point is bonded in respectively on a bonding boss.
Preferably, the pair of anchor point is arranged symmetrically by middle line of strain relief.
Preferably, the side of each coupling sensitive-mass block is equipped with a groove, and a pair of of coupling sensitive-mass block
Groove between be located at the not ipsilateral of the supporting beam being connected with anchor point.
Preferably, the capacitor board component includes the second fixed capacity plate of a pair of first fixed capacity plate and a pair, described
First fixed capacity plate is respectively arranged in the lower section with fluted side, the second fixed capacity plate on coupling sensitive-mass block
It is respectively arranged in the lower section on coupling sensitive-mass block without fluted side；Lead electrode component includes first electrode and second
Electrode, two the first fixed capacity plates, which are connected to constitute one group of detection capacitor and share first electrode by conducting wire, draws, and two the
Two fixed capacity plates, which are connected to constitute another group of detection capacitor and share second electrode by conducting wire, draws, two groups of detection capacitor difference
Obtain the output capacitance of micro-acceleration gauge.
Preferably, the silicon-sensitive structure is arranged with the structure centre of silicon substrate in holohedral symmetry with respect to the side of silicon substrate.
The present invention provides a kind of preparation method of highly sensitive Pendulous Micromachined Silicon Accelerometer above-mentioned, implementation steps packet
It includes:
1) prepare first soi wafer for being used to prepare silicon substrate；
2) it is formed between silicon-sensitive structure, silicon substrate on the surface of first soi wafer by the first depth of dry etching
Capacitance gap；
3) capacitor board component and lead electrode group are formed by the second depth of dry etching on the surface of first soi wafer
Part；
4) the epitaxial growth layer of silicon dioxide on the surface of first soi wafer；
5) etching silicon dioxide forms sacrificial layer on the surface of first soi wafer；
6) by first soi wafer, be used to prepare silicon-sensitive structure second soi wafer pass through low stress be bonded；
7) operation layer and pre- buried layer on second soi wafer are removed；
8) thermal oxide generates layer of silicon dioxide on second soi wafer；
9) thickness that etching is less than thermal oxide generation silica for the first time on second soi wafer forms new pre- buried layer；
10) second of etching is equal to the thickness that thermal oxide generates silica on second soi wafer, so that second SOI
Whole silica are removed for etching the region to be removed of silicon-sensitive structure on silicon chip surface；
11) the first time dry etching silicon-sensitive structure on second soi wafer；
12) third time etching silicon dioxide exposes buried oxide layer on second soi wafer；
13) second of dry etching silicon-sensitive structure is formed with reeded coupling sensitive-mass block on second soi wafer；
14) silicon dioxide sacrificial layer is discharged, technique is completed.
Compared to the prior art, the highly sensitive Pendulous Micromachined Silicon Accelerometer of the present invention has an advantage that
1, coupling sensitive-mass block of the invention, passes through third supporting beam, the 4th supporting beam and strain relief direct-coupling
Together, the space utilization rate of silicon-sensitive structure can be increased substantially, increase the effective area of detection of sensitive-mass block, improved micro-
The detection sensitivity of accelerometer.
2, anchor point built in silicon-sensitive structure of the invention, anchor point are located at the middle part of coupling sensitive-mass block, can be significantly
Device entire area is reduced, yield rate is improved, reduces cost, meanwhile, the effective area of detection of silicon-sensitive mass block is further increased,
Improve the detection sensitivity of micro-acceleration gauge.
3, the cross section of two pairs of supporting beams of the invention is rectangle, and the erosion vacancy of supporting beam and its two sides can be by SOI silicon
Disk is formed using dry etching processing technology, with device area is small, high yield rate, at low cost, processing quality is high, processing Shandong
The good advantage of stick.
4, the cross section of two pairs of supporting beams of the invention is rectangle, and the principal axis of inertia direction of beam can be made perpendicular to structure
Surface can reduce and export variation caused by the mechanical creep as caused by structure body factor, so as to effectively promote the micro- biography of silicon
The stability of sensor.
The preparation method of micro-acceleration gauge of the present invention have an advantage that the preparation method of micro-acceleration gauge of the present invention by
On the basis of the silicon-sensitive structure that SOI silicon wafer is formed using dry etching processing technology, it can be prepared of the invention micro-
Accelerometer has the advantages that small device area, high yield rate, at low cost, processing quality is high, processing robustness is good.
Detailed description of the invention
Fig. 1 is the schematic view of the front view of micro-acceleration gauge in the embodiment of the present invention.
Fig. 2 is the schematic perspective view of silicon-sensitive structure in the embodiment of the present invention.
Fig. 3 is the schematic cross-sectional view of A-A in Fig. 2.
Fig. 4 is the schematic perspective view of silicon substrate in the embodiment of the present invention.
Fig. 5 is the schematic view of the front view of strain relief in the embodiment of the present invention.
Fig. 6 is the processing process schematic diagram of micro-acceleration gauge in the embodiment of the present invention.
Fig. 7 is the direction of motion schematic diagram of each sensitive-mass block of mode of flexural vibration of micro-acceleration gauge in the embodiment of the present invention.
Fig. 8 is the direction of motion schematic diagram of each sensitive-mass block of torsion mode of micro-acceleration gauge in the embodiment of the present invention.
Fig. 9 is that micro-acceleration gauge of the embodiment of the present invention and the prior art are mechanical in the full model frequency range of Torsion mode frequency
The comparable situation variation comparison diagram of sensitivity (keeping micro-acceleration gauge nonlinearity is 0.25%).
Figure 10 is acceleration of the embodiment of the present invention direction when being vertical structure plane, each sensitive-mass block of micro-acceleration gauge
Direction of motion schematic diagram.
Figure 11 be acceleration of embodiment of the present invention direction be in structural plan along supporting beam direction when, micro-acceleration gauge it is each
Sensitive-mass block direction of motion schematic diagram.
Figure 12 is acceleration of embodiment of the present invention direction micro-acceleration gauge when being vertical support beam direction in structural plan
Each sensitive-mass block direction of motion schematic diagram.
Figure 13 is the emulation schematic diagram of micro-acceleration gauge of embodiment of the present invention malformation distribution when temperature reduces.
Figure 14 is micro-acceleration gauge of the embodiment of the present invention emulation schematic diagram that malformation is distributed when the temperature rises.
Marginal data: 1, silicon substrate；11, capacitor board component；111, the first fixed capacity plate；112, the second fixed capacity
Plate；12, lead electrode component；121, first electrode；122, second electrode；13, it is bonded boss；2, silicon-sensitive structure；21, stress
Discharge structure；22, supporting beam；23, sensitive-mass block is coupled；231, groove；24, anchor point.
Specific embodiment
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4 and Fig. 5, the highly sensitive Pendulous Micromachined Silicon Accelerometer of the present embodiment includes connecting
It is connected in integrated silicon substrate 1 and silicon-sensitive structure 2, silicon-sensitive structure 2 includes 21, two pairs of supporting beams 22, one of strain relief
To coupling sensitive-mass block 23 and a pair of of anchor point 24, it is arranged symmetrically between a pair of coupling sensitive-mass block 23, and each coupling
Sensitive-mass block 23 is closed to be connected with anchor point 24, by an individual supporting beam 22 by another individual supporting beam respectively
22 and the connection coupling of strain relief 21, mass center of each coupling sensitive-mass block 23 be located at the support that is connected with anchor point 24
The midpoint of beam 22, anchor point 24 are located at the middle part of coupling sensitive-mass block 23；Silicon substrate 1 is equipped with capacitor board component 11 and lead electricity
Pole component 12, capacitor board component 11 be respectively arranged on coupling sensitive-mass block 23 lower section and with couple 23 gap cloth of sensitive-mass block
It sets, lead electrode component 12 is connected with capacitor board component 11.
As depicted in figs. 1 and 2, anchor point 24 is located at the middle part for coupling sensitive-mass block 23 in the present embodiment, and anchor point 24 is by silicon
Piece is formed using dry etching processing technology, is carried out dry etching by one piece of mask plate of dry etching processing technology and is processed shape
At, device entire area can be significantly reduced, yield rate is improved, reduces cost, meanwhile, further increase silicon-sensitive mass block
Effective area of detection improves the detection sensitivity of micro-acceleration gauge.
As shown in figure 3, the cross section of two pairs of supporting beams 22 is the sky of rectangle, supporting beam 22 and its two sides in the present embodiment
Gap can be formed by silicon wafer using dry etching processing technology, small, high yield rate, at low cost, processing quality with device area
Advantage high, processing robustness is good.Meanwhile the cross section of supporting beam 22 is rectangle, and the principal axis of inertia direction of beam can be made vertical
In body structure surface, it can reduce and export variation caused by the mechanical creep as caused by structure body factor, so as to effectively be promoted
The stability of silicon micro-sensor.In the present embodiment, two pairs of supporting beams 22 respectively include supporting beam 22#1~supporting beam 22#4, support
Beam 22#1 and supporting beam 22#2 are arranged symmetrically relative to strain relief 21, and supporting beam 22#3 and supporting beam 22#4 are relative to answering
Power release structure 21 is arranged symmetrically,
As shown in Figure 1 and Figure 4, lead electrode 12 specifically uses silicon electrode, the stress release beam of silicon-sensitive structure 2 in the present embodiment
21 is smaller than silicon substrate 1, leaves space for arrangement lead electrode 12.
As shown in Figure 1 and Figure 4, silicon substrate 1 is equipped with bonding boss 13 in the present embodiment, each anchor point 24 is bonded respectively
On a bonding boss 13, it is bonded between boss 13 and built-in bonding anchor point 23 and bonding company is carried out using low stress bonding pattern
It connects, can conveniently and efficiently realize the connection between silicon substrate 1, silicon-sensitive structure 2, simple process is easy to operate.
As shown in Figure 1, Figure 4 and Figure 5, in the present embodiment a pair of of anchor point 24 with strain relief 21 for the symmetrical cloth of middle line
It sets, the influence of the sensitivity of silicon-sensitive structure 2 and 24 pairs of anchor point built-in coupling sensitive-mass blocks 23 can be reduced.
As shown in Figure 1 and Figure 4, a pair of of coupling sensitive-mass block 23(includes the first sensitive-mass block 23#1 and second sensitive
Mass block 23#2) built-in anchor point 24 is fixed on by supporting beam 22#1 in a pair of of supporting beam 22 and supporting beam 22#2 respectively
On, two sensitive-mass block relative stress release beams 21 are arranged symmetrically.Due to the principal axis of inertia direction vertical structure table of supporting beam 3
Face, the first sensitive-mass block 23#1 and the second sensitive-mass block when generating bending deformation in the same side region of supporting beam 22
The Displacements Distribution of 23#2 is symmetrical along the vertical middle line of the side region and supporting beam 22, will couple 23 change in displacement pair of sensitive-mass block
The influence of accelerometer output is acted on by difference to be eliminated, and is further improved stability, is reduced due to the extraneous ring such as temperature
Border changes the influence for output.
As shown in Fig. 2, midpoint of the mass center of the first sensitive-mass block 23#1 by corresponding supporting beam 22, the second sensitive matter
By the midpoint of corresponding supporting beam 22, which can ensure to couple sensitive-mass block 23 and supporting beam the mass center of gauge block 23#2
Distribution of force between 22 is uniform.
As shown in Fig. 2, the side of each coupling sensitive-mass block 23 is equipped with a groove 231, and a pair of of coupling is quick
Feel and is located at the not ipsilateral of the supporting beam 22 being connected with anchor point 24 between the groove 231 of mass block 23.
As shown in Figure 2 and Figure 5, capacitor board component 11 includes the first fixed capacity plate of a pair 111 and the fixed electricity of a pair second
Holding plate 112, the first fixed capacity plate 111 is respectively arranged in the lower section with fluted 231 side on coupling sensitive-mass block 23, the
Two fixed capacity plates 112 are respectively arranged in the lower section on coupling sensitive-mass block 23 without fluted 231 side；Lead electrode group
Part 12 includes first electrode 121 and second electrode 122, and two the first fixed capacity plates 111 are connected by conducting wire constitutes one group of inspection
It surveys capacitor and shares first electrode 121 and draw, two the second fixed capacity plates 112 are connected by conducting wire constitutes another group of detection electricity
Hold and share second electrode 122 and draw, two groups of detection capacitance differences get the output capacitance of micro-acceleration gauge.Above-mentioned detection mode
Have an advantage that a pair of of coupling sensitive-mass block 23(of (1) the present embodiment includes the first sensitive-mass block 23#1 and second quick
Feel mass block 23#2) size is identical, and capacitor board component 11 includes two the first fixed capacity plates 111 and two second fixations
Relative area, 112 and of the second fixed capacity plate of capacitor board 112, the first fixed capacity plate 111 and the first sensitive-mass block 23#1
The relative area of second sensitive-mass block 23#2 is equal in magnitude, thus can ensure the relative area of two groups of detection capacitors it is identical with
Guarantee identical capacitor.(2) two the first fixed capacity plates 111 are connected by conducting wire to be constituted one group of detection capacitor and shares first
Silicon electrode 121 is drawn, and two the second fixed capacity plates 112 are connected by conducting wire to be constituted another group of detection capacitor and share the second silicon
Electrode 122 is drawn, and two groups of detection capacitors pass through 122 difference output micro-acceleration gauge of the first silicon electrode 121 and the second silicon electrode
Output capacitance gets the output capacitance of micro-acceleration gauge by two groups of detection capacitance differences, can be by non-sensitive axle acceleration shadow
The change in displacement of sensitive-mass block under ringing is acted on the influence that accelerometer exports by difference and eliminated, it will be apparent that is improved steady
It is qualitative, reduce the external environments such as temperature and change influence to output, have intersecting axle coupling error small, good temp characteristic excellent
Point.
As shown in Figure 2 and Figure 5, capacitor board component 11 includes the first fixed capacity plate of a pair 111 and the fixed electricity of a pair second
Hold plate 112, the acceleration of input is converted inertia force by coupling sensitive-mass block 23, and inertia force makes to couple the generation of sensitive-mass block
Displacement, so that the capacitor between coupling sensitive-mass block and capacitor board component 11 changes, since groove 231 makes often
A sensitive-mass block quality has asymmetry with respect to supporting beam 22, when by acceleration perpendicular to silicon structure surface, branch
Support beam 22 twists, two the first fixed capacity plates 111 be connected by conducting wire constitute one group of detection capacitor, two it is second fixed
Capacitor board 112 is connected by conducting wire constitutes another group of detection capacitor difference, obtains this to the capacitor output under acceleration effect, leads to
Crossing external capacitive detection circuit can be obtained capacitor output valve, and then calculate corresponding acceleration.
As shown in Figure 2 and Figure 5, in the present embodiment silicon-sensitive structure 2 with respect to silicon substrate 1 side with the structure of silicon substrate 1
Center is arranged in holohedral symmetry, can reduce silicon-sensitive structure 2 and built-in 24 pairs of anchor point couple the sensitivity of sensitive-mass block assembly
It influences.
As shown in fig. 6, the implementation steps of the preparation method of the present embodiment high sensitivity Pendulous Micromachined Silicon Accelerometer include:
1) prepare first soi wafer for being used to prepare silicon substrate 1, as shown in Figure 6 (a), first soi wafer in the present embodiment
Device layer thickness be 6 microns；
2) pass through the first depth of dry etching (2 microns) formation silicon-sensitive structures 2, silicon substrate on the surface of first soi wafer
Capacitance gap between plate 1, as shown in Figure 6 (b)；
3) on the surface of first soi wafer by (4 microns) formation capacitor board components 11 of the second depth of dry etching and
Lead electrode component 12, as shown in Figure 6 (c)；
4) one layer of 0.5 micron of thick silica of epitaxial growth on the surface of first soi wafer, as shown in figure 6 (d)；
5) etching silicon dioxide forms sacrificial layer on the surface of first soi wafer, as shown in Figure 6 (e)；
6) by first soi wafer, be used to prepare silicon-sensitive structure 2 second soi wafer pass through low stress be bonded, such as Fig. 6
(f) shown in；
7) operation layer and pre- buried layer on second soi wafer are removed, as shown in Fig. 6 (g)；
8) thermal oxide generates one layer 400 nanometers of silica on second soi wafer, as shown in Fig. 6 (h)；
9) on second soi wafer for the first time etching be less than thermal oxide generate silica thickness (the present embodiment about 200 is received
Rice is thick) new pre- buried layer is formed, as shown in Fig. 6 (i)；
10) second of etching is equal to the thickness (400 nanometer thickness) that thermal oxide generates silica on second soi wafer, makes
It obtains and removes whole silica for etching the region to be removed of silicon-sensitive structure 2 on second soi wafer surface, such as Fig. 6 (j)
It is shown；
11) first time dry etching (10 microns) the silicon-sensitive structure 2 on second soi wafer, as shown in Fig. 6 (k)；
12) third time etching silicon dioxide exposes buried oxide layer on second soi wafer, as shown in Fig. 6 (l)；
13) second of dry etching (40 microns) silicon-sensitive structure 2 formation is quick with reeded coupling on second soi wafer
Mass block 23 is felt, as shown in Fig. 6 (m)；
14) silicon dioxide sacrificial layer is discharged, technique is completed, and is obtained shown in micro-acceleration gauge such as Fig. 6 (n).
The misalignment of each sensitive-mass block under the different modalities that the present embodiment passes through COMSOL software emulation, what is obtained is imitative
True result is as shown in Fig. 7~Fig. 8, and wherein Fig. 7 is mode of flexural vibration, and Fig. 8 is torsion mode.
Referring to Fig. 9, by the micro-acceleration gauge of the present embodiment and the prior art, (Chinese Patent Application No. is
201410606833.2 the technical solution recorded) under ideal conditions, the full mode frequency of emulation micro-acceleration gauge Torsion mode frequency
Rate range (1500Hz to 2500Hz), the comparable situation of accelerometer mechanical sensitivity.To make simulation result have comparativity,
In simulation process, remain that micro-acceleration gauge nonlinearity is 0.25%.It can be seen in figure 9 that in micro-acceleration gauge
In the full model frequency range of Torsion mode frequency, the mechanical sensitivity of the prior art is in 100fF/g hereinafter, and the present embodiment is micro-
The mechanical sensitivity of accelerometer is in 250fF/g or more.Thus, it could be seen that compared to the prior art, the present embodiment micro-acceleration
The mechanical sensitivity of meter increases substantially, and detection accuracy is significantly promoted.
The present embodiment by the misalignment of each sensitive-mass block under the different directions acceleration of COMSOL software emulation with
And when temperature change each sensitive-mass block misalignment, obtained simulation result is as shown in Figure 10~Figure 14.Referring to Figure 10, figure
11 and Figure 12, wherein a represents acceleration, and the arrow beside a represents the direction of acceleration；The coupling sensitive-mass of micro-acceleration gauge
Arrow on block (the first sensitive-mass block 221 or the second sensitive-mass block 222) represents sensitive when the acceleration by this direction
The direction of motion of mass block.Referring to Figure 10, when acceleration direction is vertical structure plane, supporting beam 3 based on torsional deflection,
Acceleration direction at this time is the detection direction of the present embodiment single-axis accelerometer；Referring to Figure 11 and Figure 12, when by structure
When in plane along the acceleration in 3 direction of 3 direction of supporting beam and vertical support beam, supporting beam 3 is sensitive at this time based on bending deformation
First sensitive-mass block 221 or second sensitive matter of the mass block in two regions for taking supporting beam 3 as boundary, in the same area
Misalignment is identical between gauge block 222, because accelerometer is Double deference detection, the at this time position of structural plan vertical direction
Output caused by moving is acted on by difference and being eliminated.Figure 13 and Figure 14 simulate the micro-acceleration gauge of the present embodiment not by acceleration respectively
When acting on temperature decline and rising, the Displacements Distribution situation of silicon-sensitive structure 2.T represents temperature in figure, and the side T is down or up
Arrow represent temperature decline and rise.It can be seen that from Figure 13 and Figure 14 since the present embodiment micro-acceleration gauge is using silicon square
Shape supporting beam 3 couples sensitive-mass block assembly 22 in two regions for taking supporting beam 3 as boundary under the influence of temperature T,
Sensitive-mass block misalignment is distributed along 3 central symmetry of supporting beam in the same area, therefore can eliminate temperature by difference effect
Accelerometer output shift caused by degree variation.
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
Those of ordinary skill for, several improvements and modifications without departing from the principles of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of high sensitivity Pendulous Micromachined Silicon Accelerometer, including the silicon substrate (1) being connected as one and silicon-sensitive structure
(2), it is characterised in that: the silicon-sensitive structure (2) includes strain relief (21), two pairs of supporting beams (22), a pair of of coupling
Sensitive-mass block (23) and a pair of of anchor point (24), a pair couples to be arranged symmetrically between sensitive-mass block (23), and each coupling
Sensitive-mass block (23) are closed to be connected by an individual supporting beam (22) with anchor point (24) respectively, is individual by another
Supporting beam (22) and strain relief (21) connection coupling, the mass center of each coupling sensitive-mass block (23) is located at and anchor point
(24) midpoint of connected supporting beam (22), the anchor point (24) are located at the middle part of coupling sensitive-mass block (23)；The silicon substrate
Plate (1) is equipped with capacitor board component (11) and lead electrode component (12), and it is quick that the capacitor board component (11) is respectively arranged on coupling
It is arranged below sense mass block (23) and with sensitive-mass block (23) gap is coupled, the lead electrode component (12) and capacitor board group
Part (11) is connected.
2. high sensitivity Pendulous Micromachined Silicon Accelerometer according to claim 1, it is characterised in that: two pairs of supporting beams
(22) cross section is rectangle.
3. high sensitivity Pendulous Micromachined Silicon Accelerometer according to claim 1, it is characterised in that: the silicon substrate (1)
It is equipped with bonding boss (13), each anchor point (24) is bonded in respectively on a bonding boss (13).
4. high sensitivity Pendulous Micromachined Silicon Accelerometer according to claim 3, it is characterised in that: the pair of anchor point
(24) it is arranged symmetrically with strain relief (21) for middle line.
5. high sensitivity Pendulous Micromachined Silicon Accelerometer according to claim 1, it is characterised in that: each coupling is sensitive
The side of mass block (23) is equipped with a groove (231), and divides between the groove (231) of a pair of of coupling sensitive-mass block (23)
The supporting beam (22) that Wei Yu not be connected with anchor point (24) it is not ipsilateral.
6. high sensitivity Pendulous Micromachined Silicon Accelerometer according to claim 4, it is characterised in that: the capacitor board component
It (11) include a pair of first fixed capacity plate (111) and a pair of second fixed capacity plate (112), the first fixed capacity plate
(111) it is respectively arranged in the lower section with fluted (231) side, the second fixed capacity plate in coupling sensitive-mass block (23)
(112) it is respectively arranged in the lower section in coupling sensitive-mass block (23) without fluted (231) side；The lead electrode component
It (12) include first electrode (121) and second electrode (122), two the first fixed capacity plates (111) are connected by conducting wire to be constituted
One group of detection capacitor and shared first electrode (121) extraction, two the second fixed capacity plates (112) are connected by conducting wire to be constituted separately
It one group of detection capacitor and shares second electrode (122) and draws, two groups of detection capacitance differences get the output capacitance of micro-acceleration gauge.
7. high sensitivity Pendulous Micromachined Silicon Accelerometer according to claim 1, it is characterised in that: the silicon-sensitive structure
(2) side of opposite silicon substrate (1) is arranged with the structure centre of silicon substrate (1) in holohedral symmetry.
8. the preparation method of highly sensitive Pendulous Micromachined Silicon Accelerometer described in a kind of claim 1~7, it is characterised in that real
Applying step includes:
1) prepare first soi wafer for being used to prepare silicon substrate (1)；
2) silicon-sensitive structure (2), silicon substrate (1) are formed by the first depth of dry etching on the surface of first soi wafer
Between capacitance gap；
3) capacitor board component (11) and lead electricity are formed by the second depth of dry etching on the surface of first soi wafer
Pole component (12)；
4) the epitaxial growth layer of silicon dioxide on the surface of first soi wafer；
5) etching silicon dioxide forms sacrificial layer on the surface of first soi wafer；
6) by first soi wafer, be used to prepare silicon-sensitive structure (2) second soi wafer pass through low stress be bonded；
7) operation layer and pre- buried layer on second soi wafer are removed；
8) thermal oxide generates layer of silicon dioxide on second soi wafer；
9) thickness that etching is less than thermal oxide generation silica for the first time on second soi wafer forms new pre- buried layer；
10) second of etching is equal to the thickness that thermal oxide generates silica on second soi wafer, so that second SOI
Whole silica are removed for etching the region to be removed of silicon-sensitive structure (2) on silicon chip surface；
11) the first time dry etching silicon-sensitive structure (2) on second soi wafer；
12) third time etching silicon dioxide exposes buried oxide layer on second soi wafer；
13) second of dry etching silicon-sensitive structure (2) is formed with reeded coupling sensitive-mass on second soi wafer
Block (23)；
14) silicon dioxide sacrificial layer is discharged, technique is completed.
Priority Applications (1)
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