CN105137120B - A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof - Google Patents
A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof Download PDFInfo
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- CN105137120B CN105137120B CN201510550450.2A CN201510550450A CN105137120B CN 105137120 B CN105137120 B CN 105137120B CN 201510550450 A CN201510550450 A CN 201510550450A CN 105137120 B CN105137120 B CN 105137120B
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Abstract
The invention discloses a kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof, accelerometer includes silicon-sensitive structure and the glass substrate being connected as one, silicon-sensitive structure includes fixed frame and forms integral supporting beam and sensitive-mass block assembly with fixed frame, the cross section of supporting beam is V-arrangement, sensitive-mass block assembly is fixed on fixed frame by supporting beam, glass substrate is equipped with capacitor board component and lead electrode, capacitor board component is arranged on below sensitive-mass block assembly and is arranged with sensitive-mass block assembly gap, lead electrode is connected with capacitor board component；Preparation method includes carrying out silicon wafer Twi-lithography, corrosion twice and prepares silicon-sensitive structure, then silicon-sensitive structure is bonded with glass substrate to obtain V-beam torsional pendulum type single shaft micro-mechanical accelerometer.The present invention has the advantages that processing technology is simple, processing quality is high, processes that robustness is good, intersecting axle coupling error is small, good temp characteristic, stability are good.
Description
Technical field
The present invention relates to micro mechanical sensor field, and in particular to a kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer
And preparation method thereof.
Background technology
Accelerometer is mainly used for measuring the kinematic parameter in moving object relative inertness space.With traditional acceleration phase
Than, MEMS micro-acceleration gauge technologies, have the characteristics that it is small, low in energy consumption, be easy to mass processing, thus rapidly become research
Hot spot, its performance also constantly improving, and is widely used in military civil field.
At present, external single shaft micro-acceleration gauge product is ripe and is widely used, and the country is for list
The research and development dynamics of axis micro-acceleration gauge is also constantly increasing, and has had part Experiment room to develop the higher work of performance
Journey model machine, but how combination existing design technology manufacture exploration is simple in structure, manufacture is efficient, the micro- acceleration of single shaft of performance brilliance
Degree meter has important practical significance.The micro- torsional accelerometer of silicon has that small, reliability is high, impact resistance etc. is a series of excellent
Point, thus it is subject to the most attention of various countries, competitively develop, progressively applied at present in the field such as guidance and automotive check.But work
Skill is complicated, noise is big, temperature characterisitic and robustness are limited be subject to self structure.
The Chinese patent literature that number of patent application is 201410825011.3 discloses a kind of micro-mechanical accelerometer, still
The cross section of the supporting beam of sensitive-mass block assembly is hexagon in the technical solution, cumbersome there are procedure of processing, processing robust,
The problems such as temperature characterisitic, capacitance sensitivity have much room for improvement.
The content of the invention
The technical problem to be solved in the present invention：For the above problem of the prior art, there is provided a kind of processing technology is simple, adds
The V-beam torsional pendulum type single shaft that working medium amount is high, processing robustness is good, intersecting axle coupling error is small, good temp characteristic, stability are good is micro-
Mechanical accelerometer and preparation method thereof.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：
A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer, including the silicon-sensitive structure and glass base being connected as one
Plate, the silicon-sensitive structure include fixed frame and form integral supporting beam and sensitive-mass block group with fixed frame
Part, the cross section of the supporting beam is V-arrangement, and the sensitive-mass block assembly is fixed on fixed frame by supporting beam；It is described
Glass substrate is equipped with capacitor board component and lead electrode, the capacitor board component be arranged on below sensitive-mass block assembly and with it is quick
Feel mass block pack clearance arrangement, the lead electrode is connected with capacitor board component.
Preferably, the silicon-sensitive structure is made of silicon wafer of two-sided wet etching processing technology, the supporting beam
Inside groove be to carry out wet etching by one piece of mask plate of two-sided wet etching processing technology to process to be formed, the supporting beam two
The erosion room of side is to carry out wet etching by another piece of mask plate of two-sided wet etching processing technology to process to be formed.
Preferably, the sensitive-mass block assembly includes two pairs of sensitive-mass blocks, includes quality per a pair of sensitive-mass block
The the first sensitive-mass block and the second sensitive-mass block that different and opposite supporting beam is arranged symmetrically, and two pairs of sensitive-mass blocks
First sensitive-mass block of middle a pair of sensitive-mass block and the second sensitive-mass block of another pair sensitive-mass block are located at supporting beam
The same side；The capacitor board component includes two the first fixed capacity plates and two the second fixed capacity plates, and described first is solid
Determine the relative area of capacitor board and the first sensitive-mass block, the second fixed capacity plate and the second sensitive-mass block relative area it
Between it is equal in magnitude, the first fixed capacity plate is respectively arranged in the lower section of the first sensitive-mass block, second fixed capacity
Plate is respectively arranged in the lower section of the second sensitive-mass block, and the lead electrode includes first electrode and second electrode, described two
First fixed capacity plate is connected to form one group of detection capacitance and share first electrode by conducting wire draws, and described two second fix
Capacitor board is connected to form another group of detection capacitance and share second electrode by conducting wire draws, and capacitance difference is detected described in two groups and is got
To the output capacitance of V-beam torsional pendulum type single shaft micro-mechanical accelerometer.
Preferably, the first sensitive-mass block and the second sensitive-mass block are connected by cantilever beam with supporting beam respectively,
The cantilever beam of the first sensitive-mass block and the cantilever beam of the second sensitive-mass block are with respect to supporting beam pair in per a pair of sensitive-mass block
Claim arrangement.
Preferably, the shape of cross section of the cantilever beam is trapezoidal.
Preferably, the first sensitive-mass block is connected by the midpoint of a side with cantilever beam, and described second is sensitive
Mass block is connected by the midpoint of a side with cantilever beam.
Preferably, the first sensitive-mass block and the second sensitive-mass block are tetrapyamid shape structure, the rectangular pyramid
The less top surface of shape structure product is arranged in the side by capacitor board component, is located at rectangular pyramid on the second sensitive-mass block
Shape structure accumulates larger bottom surface and is equipped with groove.
Preferably, the glass substrate is equipped with a pair of of bonding boss, and the fixed frame is equipped with a pair of of bonding anchor point,
Bonding connection is carried out using anode linkage mode between the bonding boss and bonding anchor point, it is the pair of to be bonded anchor point to support
Beam is symmetrically arranged in the middle part of the both sides of fixed frame for center line.
Preferably, the silicon-sensitive structure is distributed with respect to the side of glass substrate with structure centre in holohedral symmetry.
The present invention also provides a kind of preparation method of foregoing V-beam torsional pendulum type single shaft micro-mechanical accelerometer, step includes：
1）Silicon wafer is made by silicon-sensitive structure using two-sided wet etching processing technology；2）By silicon-sensitive structure and carry capacitor board group
The glass substrate of part and lead electrode is bonded using anode linkage mode, obtains the acceleration of V-beam torsional pendulum type single shaft micromechanics
Degree meter；Wherein described step 1）The middle detailed step that silicon wafer is made to silicon-sensitive structure using two-sided wet etching processing technology
Including：
1.1）Prepare silicon wafer of the surface covered with silicon dioxide layer；
1.2）Front mask plate is placed in the front of silicon wafer, photoetching is carried out and corrodes silicon dioxide layer, in silicon wafer
Front forms pre- buried regions mask pattern, and the thickness of the silicon dioxide layer of the corresponding pattern position of the front mask plate is remaining as the
One thickness；
1.3）Reverse side mask plate is placed in the reverse side of silicon wafer, photoetching is carried out and corrodes to silicon face is exposed, in silicon wafer
Reverse side formed mask pattern；
1.4）Silicon wafer is removed whole photoresists to be placed in etchant solution, when the corresponding pattern position of reverse side mask plate
Silicon face be etched to the first depth after taken out from etchant solution；
1.5）Silicon dioxide layer whole removing on silicon wafer surface is removed into first thickness so that the corresponding figure of front mask plate
Case position, which is opened, exposes silicon face；
1.6）Silicon wafer is again placed in etchant solution, when the silicon face of the corresponding pattern position of reverse side mask plate is rotten
Eating thrown is saturating；
1.7）Silicon-sensitive structure is obtained after the silica on silicon wafer surface is all removed.
V-beam torsional pendulum type single shaft micro-mechanical accelerometer tool of the present invention has the advantage that：（1）The silicon-sensitive structure of the present invention
Integral supporting beam and sensitive-mass block assembly, and the cross section of supporting beam are formed including fixed frame and with fixed frame
For V-arrangement, the principal axis of inertia direction of supporting beam is converted into by being a certain included angle with structural plan perpendicular to body structure surface, can subtract
Exporting change caused by the small mechanical creep as caused by structure factor itself, stablizes so as to effectively lift accelerometer
Property；（2）The silicon-sensitive structure of the present invention includes fixed frame and forms integral supporting beam and sensitive matter with fixed frame
Gauge block component, and the cross section of supporting beam is V-arrangement, cross section is easy to process for the supporting beam of V-arrangement, by Twi-lithography and twice
Corrosion can be completed to process, and for using cross section relatively as the supporting beam of hexagon, processing technology step is simpler.
V-beam of the present invention can be prepared in the preparation method of V-beam torsional pendulum type single shaft micro-mechanical accelerometer of the present invention
Torsional pendulum type single shaft micro-mechanical accelerometer, tool have the advantage that：（1）V-beam torsional pendulum type single shaft micro-mechanical accelerometer of the present invention
Preparation method two pieces of mask plates are used only（Front mask plate and reverse side mask plate）It can complete to process, including use once just
Face photoetching, a reverse side photoetching, and self-stopping technology occurs since monocrystalline silicon corrodes when face is intersecting in anisotropic wet corrosion,
Therefore the processing robustness of medial support girder construction is good, high precision machining, and technique is simple.（2）V-beam torsional pendulum type single shaft of the present invention
In the preparation method of micro-mechanical accelerometer, the front of two pairs of sensitive-mass blocks of silicon-sensitive structure is added using front mask plate
Work, reverse side are process using reverse side mask plate so that the machining shape and structure design of product are completely the same, precision machining
Degree is high, the capacitance relative error smaller of silicon-sensitive structure.
Brief description of the drawings
Fig. 1 is the main structure diagram of the embodiment of the present invention.
Fig. 2 is the dimensional decomposition structure diagram of the embodiment of the present invention.
Fig. 3 is the dimensional structure diagram of silicon-sensitive structure in the embodiment of the present invention.
Fig. 4 is the overlooking the structure diagram of silicon-sensitive structure in the embodiment of the present invention.
Fig. 5 is the schematic cross-sectional view of A-A in Fig. 4.
Fig. 6 is the section view enlarged structure schematic diagram of supporting beam in the embodiment of the present invention.
Fig. 7 is the schematic cross-sectional view of B-B in Fig. 4.
Fig. 8 is the structure diagram of glass substrate in the embodiment of the present invention.
Fig. 9 is the processing process schematic diagram of the embodiment of the present invention.
Figure 10 is the direction of motion schematic diagram of each mass block when acceleration of embodiment of the present invention direction is vertical stratification plane.
Figure 11 be acceleration of embodiment of the present invention direction be in structural plan along supporting beam direction when each sensitive-mass block
Direction of motion schematic diagram.
Figure 12 is each sensitive-mass when acceleration of embodiment of the present invention direction is vertical support beam direction in structural plan
Block direction of motion schematic diagram.
Figure 13 is the emulation schematic diagram that malformation is distributed when temperature raises of the embodiment of the present invention.
Figure 14 is the emulation schematic diagram that malformation is distributed when temperature reduces of the embodiment of the present invention.
Figure 15 is the embodiment of the present invention and the prior art full warm area output shift comparison diagram under 0g states.
For the embodiment of the present invention and the prior art, the full warm area mechanical sensitivity under 1g states changes comparison diagram to Figure 16.
Marginal data：1st, glass substrate；11st, capacitor board component；111st, the first fixed capacity plate；112nd, the second fixed capacity
Plate；12nd, lead electrode；121st, first electrode；122nd, second electrode；13rd, it is bonded boss；2nd, silicon-sensitive structure；20th, fixed frame
Frame；21st, supporting beam；211st, inside groove；212nd, room is lost；22nd, sensitive-mass block assembly；221st, the first sensitive-mass block；222nd,
Two sensitive-mass blocks；223rd, cantilever beam；224th, groove；23rd, it is bonded anchor point.
Embodiment
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4 and Fig. 5, the V-beam torsional pendulum type single shaft micro-mechanical accelerometer bag of the present embodiment
The silicon-sensitive structure 2 being connected as one and glass substrate 1 are included, silicon-sensitive structure 2 includes fixed frame 20 and and fixed frame
20 form the supporting beam 21 and sensitive-mass block assembly 22 of one, and the cross section of supporting beam 21 is V-arrangement, sensitive-mass block assembly
22 are fixed on fixed frame 20 by supporting beam 21；Glass substrate 1 is equipped with capacitor board component 11 and lead electrode 12, capacitance
Plate component 11 is arranged on the lower section of sensitive-mass block assembly 22 and is arranged with 22 gap of sensitive-mass block assembly, lead electrode 12 and capacitance
Plate component 11 is connected.Since the cross section of the supporting beam 21 of the present embodiment is V-arrangement, it is possible to increase the controllability of processing is so as to improve
Machining accuracy so that the robustness of the present embodiment significantly improves.In the present embodiment, lead electrode 12 specifically uses electrode, and silicon is quick
It is smaller than glass substrate 1 to feel the fixed frame 20 of structure 2, space is left for arrangement lead electrode 12.
As shown in fig. 6, the silicon-sensitive structure 2 of the present embodiment is made of silicon wafer of two-sided wet etching processing technology,
The inside groove 211 of supporting beam 21 is to carry out wet etching by one piece of mask plate of two-sided wet etching processing technology to process to be formed,
The erosion room 212 of 21 both sides of supporting beam is to carry out wet method corruption by another piece of mask plate of two-sided wet etching processing technology
Erosion processing is formed, and carrying out Twi-lithography and corrosion twice by two-sided wet etching processing technology can complete to process, opposite to adopt
Be with cross section hexagon supporting beam for, have the advantages that processing technology is simple, processing quality is high, processing robustness it is good；
And supporting beam 21 can be used for all kinds of silicon micro-sensors, such as micro-mechanical accelerometer, silicon gyro etc., available for all kinds of use
The girder construction on way, such as resonance beam, supporting beam etc., have the advantages that have a wide range of application.
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4 and Fig. 5, sensitive-mass block assembly 22 includes two pairs of sensitive-mass blocks, per a pair of
Sensitive-mass block includes the first sensitive-mass block 221 that quality is different, size is identical and opposite supporting beam 21 is arranged symmetrically and the
Two sensitive-mass blocks 222, and the first sensitive-mass block 221 of a pair of of sensitive-mass block and another pair are quick in two pairs of sensitive-mass blocks
Second sensitive-mass block 222 of sense mass block is located at the same side of supporting beam 21；Capacitor board component 11 includes two first fixations
The opposite face of capacitor board 111 and two the second fixed capacity plates 112, the first fixed capacity plate 111 and the first sensitive-mass block 221
Equal in magnitude, the first fixed capacity plate between the relative area of product, the second fixed capacity plate 112 and the second sensitive-mass block 222
111 are respectively arranged and are respectively arranged in the lower section of the first sensitive-mass block 221, the second fixed capacity plate 112 in the second sensitive-mass
The lower section of block 222, lead electrode 12 include first electrode 121 and second electrode 122, and two the first fixed capacity plates 111 pass through
Conducting wire, which is connected to form one group of detection capacitance and share first electrode 121, draws, and two the second fixed capacity plates 112 pass through conducting wire phase
Company forms another group of detection capacitance and shares second electrode 122 and draws, and two groups of detection capacitance differences get V-beam torsional pendulum type single shaft
The output capacitance of micro-mechanical accelerometer.The structure tool of the sensitive-mass block assembly 22 has the advantage that：（1）Due to the present embodiment
The first sensitive-mass block 221 and the second sensitive-mass block 222 be that quality is different, size is identical, and capacitor board component 11
Including two the first fixed capacity plates 111 and two the second fixed capacity plates 112, the first fixed capacity plate 111 and first is sensitive
The relative area of the relative area of mass block 221, the second fixed capacity plate 112 and the second sensitive-mass block 222 is equal in magnitude, because
This is able to ensure that the relative area of two groups of detection capacitances is identical to ensure identical capacitance.（2）Number of patent application is
Accelerometer disclosed in 201410825011.3 Chinese patent literature includes 12 blocks of fixed capacity plates, and each sensitive-mass
Block corresponds to three blocks of fixed capacity plates, although the accelerometer can detect two-axis acceleration, Twin-shaft machinery sensitivity difference is larger.
And the V-beam torsional pendulum type single shaft micro-mechanical accelerometer of the present embodiment is single-axis accelerometer, capacitor board component 11 includes two
First fixed capacity plate 111 and two the second fixed capacity plates 112, the first fixed capacity plate 111 are respectively arranged sensitive in first
The lower section of mass block 221, the second fixed capacity plate 112 are respectively arranged in the lower section of the second sensitive-mass block 222, i.e., each is quick
A fixed capacity plate is only arranged under sense mass block, so as to effectively increase the capacitance sensitivity of silicon-sensitive structure 2.
（3）Two first fixed capacity plates 111 of the present embodiment are connected by conducting wire forms one group of detection capacitance and shared first electrode
121 draw, and two the second fixed capacity plates 112 are connected by conducting wire forms another group of detection capacitance and shared second electrode 122
Draw, two groups of detection capacitances are added by first electrode 121 and 122 difference output V-beam torsional pendulum type single shaft micromechanics of second electrode
The output capacitance of speedometer, the output of V-beam torsional pendulum type single shaft micro-mechanical accelerometer is got by two groups of detection capacitance differences
Capacitance, can pass through the influence that the change in displacement of the sensitive-mass block under the influence of non-sensitive axle acceleration exports accelerometer
Difference effect eliminates, it will be apparent that improves stability, reduces influence of the external environments such as the temperature change to output.
In the present embodiment, first electrode 121 and second electrode 122 use aluminium electrode, certainly, first electrode 121
Other kinds of metal electrode can also be used as needed with second electrode 122.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, the first sensitive-mass block 221 and the second sensitive-mass block 222 are respectively by outstanding
Arm beam 223 is connected with supporting beam 21, and the cantilever beam 223 and second of the first sensitive-mass block 221 is quick in every a pair of sensitive-mass block
The cantilever beam 223 for feeling mass block 222 is arranged symmetrically with respect to supporting beam 21.Due to the principal axis of inertia direction vertical stratification of supporting beam 21
Surface, is producing the first sensitive-mass block 221 and the second sensitive matter that cause during flexural deformation in 21 same side region of supporting beam
The Displacements Distribution of gauge block 222 is symmetrical along the vertical center line of the side region and supporting beam 21, and sensitive-mass block change in displacement pair is added
The influence of speedometer output is acted on by difference to be eliminated, and is further improved stability, is reduced due to external environments such as temperature
Change influence for output, have the advantages that intersecting axle coupling error is small, good temp characteristic.
As shown in fig. 7, the shape of cross section of cantilever beam 223 is trapezoidal.In 21 directional acceleration of temperature or non-supported beam
Under the influence of, shape of cross section can further obviate integrally-built torsion for trapezoidal cantilever beam 223 so that displacement structure
It is evenly distributed, reduces influence of the torsion to output of fixed frame 20.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, midpoint and cantilever beam 223 of the first sensitive-mass block 221 by side
It is connected, the second sensitive-mass block 222 is connected by the midpoint of a side with cantilever beam 223, which is able to ensure that first is quick
It is uniform to feel distribution of force of both 221 and second sensitive-mass blocks 222 of mass block between cantilever beam 223.
As shown in figure 5, the first sensitive-mass block 221 and the second sensitive-mass block 222 are tetrapyamid shape structure, rectangular pyramid
The less top surface of shape structure product is arranged in the side by capacitor board component 11, is located at tetragonous on the second sensitive-mass block 222
The larger bottom surface of area is equipped with groove 224 on cone structure.Groove 224 is easy to process, can simply and easily realize first
Quality difference between 221 and second sensitive-mass block 222 of sensitive-mass block.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, glass substrate 1 is equipped with a pair of of bonding boss 13, and fixed frame 20 is equipped with
A pair of bonding anchor point 23, is bonded between boss 13 and bonding anchor point 23 and carries out bonding connection using anode linkage mode.Using sun
Pole bonding pattern carries out bonding connection, can conveniently and efficiently realize the connection between glass substrate 1, fixed frame 20, technique
Simply, it is easy to operate.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, the side of the opposite glass substrate 1 of silicon-sensitive structure 2 is in complete right with structure centre
Claim distribution, fixed frame 20 can be reduced and be bonded influence of the anchor point 23 to two pairs of sensitive-mass block sensitivity.
As shown in figure 8, capacitor board component 11 includes four fixed capacity plates in the present embodiment, two of which first fixes electricity
Hold plate 111 and be respectively labeled as b and c, two the second fixed capacity plates 112 are respectively labeled as a and d.Two pairs of sensitive-mass blocks will be defeated
The acceleration entered is converted into inertia force, and inertia force is subjected to displacement two pairs of sensitive-mass blocks, hence in so that two pairs of sensitive-mass blocks
Capacitance between capacitor board component 11 changes, and due to the first sensitive-mass block 221 in every a pair of of sensitive-mass block
And the second quality asymmetry between sensitive-mass block 222, when being subject to perpendicular to the acceleration on silicon structure surface, supporting beam
21 twist, two the first fixed capacity plates 111（B and c）Be connected by conducting wire form one group of detection capacitance, two second it is solid
Determine capacitor board 112（A and d）It is connected by conducting wire and forms another group of detection capacitance difference, obtains this to the electricity under acceleration effect
Hold output, capacitance output valve can obtain by external capacitive detection circuit, and then calculate corresponding acceleration.
As shown in figure 9, the step of preparation method of the present embodiment V-beam torsional pendulum type single shaft micro-mechanical accelerometer, includes：
1）Silicon wafer is made by silicon-sensitive structure 2 using two-sided wet etching processing technology；2）By silicon-sensitive structure 2 and carry capacitor board
The glass substrate 1 of component 11 and lead electrode 12 is bonded using anode linkage mode, obtains V-beam torsional pendulum type single shaft microcomputer
Tool accelerometer；Wherein described step 1）It is middle that silicon wafer is made by silicon-sensitive structure 2 using two-sided wet etching processing technology
Detailed step includes：
1.1）Prepare silicon wafer of the surface covered with silicon dioxide layer；Such as Fig. 9（a）It is shown；In the present embodiment, silicon wafer is thick
240 microns of degree, silicon dioxide thickness 400nm；
1.2）Front mask plate is placed in the front of silicon wafer, photoetching is carried out and corrodes silicon dioxide layer, in silicon wafer
Front forms pre- buried regions mask pattern, and the thickness of the silicon dioxide layer of the corresponding pattern position of the front mask plate is remaining as the
One thickness, the at this time structure of silicon wafer such as Fig. 9（b）It is shown；In the present embodiment, first thickness is specially 200nm；
1.3）Reverse side mask plate is placed in the reverse side of silicon wafer, photoetching is carried out and corrodes to silicon face is exposed, in silicon wafer
Reverse side form mask pattern, the at this time structure of silicon wafer such as Fig. 9（c）It is shown；
1.4）Silicon wafer is removed whole photoresists to be placed in etchant solution, when the corresponding pattern position of reverse side mask plate
Silicon face be etched to the first depth after taken out from etchant solution, the structure of silicon wafer such as Fig. 9 at this time（d）It is shown；This reality
Apply in example, the first depth is specially 20 microns, and etchant solution specifically uses TMAH solution；
1.5）Silicon dioxide layer whole removing on silicon wafer surface is removed into first thickness（That is 200nm）So that front mask
The corresponding pattern position of plate, which is opened, exposes silicon face, at this time the structure of silicon wafer such as Fig. 9（e）It is shown；
1.6）Silicon wafer is again placed in etchant solution, when corrosion depth is 180 microns, since crystal face corrodes
Speed very little so that the etch-stop of two crystal face meets, forms the inside groove 211 for the supporting beam 21 that cross section is V-arrangement, this
When silicon wafer structure such as Fig. 9（f）It is shown；Continue silicon slice corrosion, when the silicon face of the corresponding pattern position of reverse side mask plate
It is corroded and penetrates, forms the erosion room 212 of the both sides for the supporting beam 21 that cross section is V-arrangement, at this time the structure of silicon wafer such as Fig. 9
（g）It is shown；
1.7）Silicon-sensitive structure 2 is obtained after the silica on silicon wafer surface is all removed.
Most silicon-sensitive structure 2 uses anode key with the glass substrate 1 with capacitor board component 11 and lead electrode 12 at last
Conjunction mode is bonded, and obtains V-beam torsional pendulum type single shaft micro-mechanical accelerometer, such as Fig. 9（h）It is shown.
By under ANSYS software emulation different directions acceleration when the misalignment and temperature change of each sensitive-mass block
The misalignment of each sensitive-mass block, obtains the simulation result of the present embodiment V-beam torsional pendulum type single shaft micromechanics accelerometer as schemed
Shown in 10~Figure 14.
Referring to Figure 10, Figure 11 and Figure 12, wherein a represents acceleration, and the arrow beside a represents the direction of acceleration；It is sensitive
Mass block（First sensitive-mass block 221 or the second sensitive-mass block 222）On arrow represent when being subject to the acceleration in this direction
The direction of motion of sensitive-mass block.Referring to Figure 10, when acceleration direction is vertical stratification plane, supporting beam 21 is with torsional deflection
Based on, acceleration direction at this time is the detection direction of the present embodiment single-axis accelerometer；Referring to Figure 11 and Figure 12, when being subject to
When in structural plan along the acceleration in 21 direction of 21 direction of supporting beam and vertical support beam, supporting beam 21 based on flexural deformation,
Sensitive-mass block is in two regions with supporting beam 21 for boundary at this time, the first sensitive-mass block 221 in the same area or
Misalignment is identical between second sensitive-mass block 222, because accelerometer detects for Double deference, structural plan is hung down at this time
Nogata to displacement caused by output by difference act on eliminate.
Figure 13 and Figure 14 simulates the V-beam torsional pendulum type single shaft micro-mechanical accelerometer of the present embodiment from acceleration respectively
When acting on temperature raising and lowering, the Displacements Distribution situation of silicon-sensitive structure 2.T represents temperature in figure, is risen or fallen by T
Arrow represent temperature rise and fall, numeral 1,2,3,4 represents the numbering of sensitive-mass block, the arrow generation on sensitive-mass block
The direction of motion of table sensitive-mass block.It can be seen that from Figure 13 and Figure 14 since the present embodiment uses V-beam structure（Support
The cross section of beam 21 is V-arrangement）, under the influence of temperature T, displacement caused by the overall deformation of the present embodiment fixed frame 20 is also in
It is symmetrical, avoid output error caused by the deflection of fixed frame 20；And sensitive-mass block is being boundary with supporting beam 21
Two regions in, in the same area sensitive-mass block misalignment along bonding anchor point 23 line direction be symmetric, because
Accelerometer output shift caused by this can eliminate temperature change by difference effect.
Referring to Figure 15 and Figure 16, by the V-beam torsional pendulum type single shaft micro-mechanical accelerometer and the prior art of the present embodiment（In
State's number of patent application is 201410825011.3 technical solutions recorded）Under ideal conditions, emulate in full warm area（- 40 is Celsius
Spend+60 degrees Celsius）Accelerometer bias drifts about to be changed with mechanical sensitivity（Capacitive form represents）Comparable situation.From Figure 15
（Acceleration is 0g）And Figure 16（Acceleration is 1g）In as can be seen that the zero bias full warm area offset of the prior art is 13.07mg, and
The full warm area offset of the zero bias of the V-beam torsional pendulum type single shaft micro-mechanical accelerometer of the present embodiment is 3.14mg, the machine of the prior art
The full warm area changing value of tool sensitivity is 0.88fF, and the machinery of the V-beam torsional pendulum type single shaft micro-mechanical accelerometer of the present embodiment
The full warm area changing value of sensitivity is 0.25fF, therefore compared to the prior art, the present embodiment V-beam torsional pendulum type single shaft micromechanics adds
The full warm area offset of zero bias of speedometer, the full warm area changing value of mechanical sensitivity significantly reduce at the same time, significantly improve accelerometer
Temperature characterisitic improve full warm area stability, reduce the temperature control of constant multiplier, General Promotion accelerometer
Two key performance indicators.
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical solutions belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
Those of ordinary skill for, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (9)
- A kind of 1. V-beam torsional pendulum type single shaft micro-mechanical accelerometer, it is characterised in that：Including the silicon-sensitive structure being connected as one （2）And glass substrate（1）, the silicon-sensitive structure（2）Including fixed frame（20）And and fixed frame（20）Form one Supporting beam（21）And sensitive-mass block assembly（22）, the supporting beam（21）Cross section be V-arrangement, the sensitive-mass block Component（22）Pass through supporting beam（21）It is fixed on fixed frame（20）On；The glass substrate（1）It is equipped with capacitor board component （11）With lead electrode（12）, the capacitor board component（11）Arranged on sensitive-mass block assembly（22）Lower section and with sensitive-mass block Component（22）Gap arrangement, the lead electrode（12）With capacitor board component（11）It is connected；The sensitive-mass block assembly（22） Including two pairs of sensitive-mass blocks, quality difference and opposite supporting beam are included per a pair of sensitive-mass block（21）First be arranged symmetrically Sensitive-mass block（221）With the second sensitive-mass block（222）, and in two pairs of sensitive-mass blocks a pair of of sensitive-mass block the One sensitive-mass block（221）With the second sensitive-mass block of another pair sensitive-mass block（222）Positioned at supporting beam（21）It is same Side；The capacitor board component（11）Including two the first fixed capacity plates（111）With two the second fixed capacity plates（112）, institute State the first fixed capacity plate（111）With the first sensitive-mass block（221）Relative area, the second fixed capacity plate（112）With Two sensitive-mass blocks（222）Relative area between equal in magnitude, the first fixed capacity plate（111）It is respectively arranged in first Sensitive-mass block（221）Lower section, the second fixed capacity plate（112）It is respectively arranged in the second sensitive-mass block（222）'s Lower section, the lead electrode（12）Including first electrode（121）And second electrode（122）, described two first fixed capacity plates （111）It is connected by conducting wire and forms one group of detection capacitance and shared first electrode（121）Draw, described two second fixed capacities Plate（112）It is connected by conducting wire and forms another group of detection capacitance and shared second electrode（122）Draw, capacitance is detected described in two groups Difference obtains the output capacitance of V-beam torsional pendulum type single shaft micro-mechanical accelerometer.
- 2. V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to claim 1, it is characterised in that：The silicon-sensitive Structure（2）It is made of silicon wafer of two-sided wet etching processing technology, the supporting beam（21）Inside groove（211）For by double One piece of mask plate of face wet etching processing technology carries out wet etching and processes to be formed, the supporting beam（21）The erosion room of both sides （212）To be formed to be processed by another piece of mask plate of two-sided wet etching processing technology progress wet etching.
- 3. V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to claim 2, it is characterised in that：Described first is quick Feel mass block（221）With the second sensitive-mass block（222）Pass through cantilever beam respectively（223）And supporting beam（21）It is connected, per a pair of First sensitive-mass block in sensitive-mass block（221）Cantilever beam（223）With the second sensitive-mass block（222）Cantilever beam （223）With respect to supporting beam（21）It is arranged symmetrically.
- 4. V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to claim 3, it is characterised in that：The cantilever beam （223）Shape of cross section to be trapezoidal.
- 5. V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to claim 4, it is characterised in that：Described first is quick Feel mass block（221）Midpoint and cantilever beam by side（223）It is connected, the second sensitive-mass block（222）Pass through The midpoint of one side and cantilever beam（223）It is connected.
- 6. V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to claim 5, it is characterised in that：Described first is quick Feel mass block（221）With the second sensitive-mass block（222）It is tetrapyamid shape structure, the tetrapyamid shape structure product is smaller Top surface be arranged in by capacitor board component（11）Side, the second sensitive-mass block（222）It is upper to be located at tetrapyamid shape structure The larger bottom surface of upper area is equipped with groove（224）.
- 7. the V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to any one in claim 1~6, its feature exist In：The glass substrate（1）It is equipped with a pair of of bonding boss（13）, the fixed frame（20）It is equipped with a pair of of bonding anchor point （23）, the bonding boss（13）With bonding anchor point（23）Between bonding connection carried out using anode linkage mode；It is the pair of It is bonded anchor point（23）With supporting beam（21）Fixed frame is symmetrically arranged in for center line（20）Both sides middle part.
- 8. V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to claim 7, it is characterised in that：The silicon-sensitive Structure（2）With respect to glass substrate（1）Side with structure centre in holohedral symmetry be distributed.
- 9. the preparation side of the V-beam torsional pendulum type single shaft micro-mechanical accelerometer according to any one in claim 1~8 Method, step include：1）Silicon wafer is made by silicon-sensitive structure using two-sided wet etching processing technology（2）；2）By silicon-sensitive knot Structure（2）With with capacitor board component（11）With lead electrode（12）Glass substrate（1）It is bonded using anode linkage mode, Obtain V-beam torsional pendulum type single shaft micro-mechanical accelerometer；Wherein described step 1）It is middle to use two-sided wet etching processing technology Silicon-sensitive structure is made in silicon wafer（2）Detailed step include：1.1）Prepare silicon wafer of the surface covered with silicon dioxide layer；1.2）Front mask plate is placed in the front of silicon wafer, photoetching is carried out and corrodes silicon dioxide layer, in the front of silicon wafer Form pre- buried regions mask pattern, the thickness of the silicon dioxide layer of the corresponding pattern position of the front mask plate is thick remaining as first Degree；1.3）Reverse side mask plate is placed in the reverse side of silicon wafer, photoetching is carried out and corrodes to silicon face is exposed, in the anti-of silicon wafer Face forms mask pattern；1.4）Silicon wafer is removed whole photoresists to be placed in etchant solution, when the silicon of the corresponding pattern position of reverse side mask plate Taken out after being etched to the first depth from etchant solution on surface；1.5）Silicon dioxide layer whole removing on silicon wafer surface is removed into first thickness so that the corresponding pattern position of front mask plate Put to be opened and expose silicon face；1.6）Silicon wafer is again placed in etchant solution, is worn when the silicon face of the corresponding pattern position of reverse side mask plate is corroded Thoroughly；1.7）Silicon-sensitive structure is obtained after the silica on silicon wafer surface is all removed（2）.
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| CN114578094B (en) * | 2022-02-28 | 2024-04-02 | 湖南天羿领航科技有限公司 | High overload torsion type silicon micro accelerometer and preparation method thereof |
| CN116593737B (en) * | 2023-07-17 | 2023-09-08 | 南京元感微电子有限公司 | MEMS full-bridge differential triaxial acceleration sensor and processing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488862A (en) * | 1993-10-18 | 1996-02-06 | Armand P. Neukermans | Monolithic silicon rate-gyro with integrated sensors |
| EP1234799A2 (en) * | 2001-02-22 | 2002-08-28 | Canon Kabushiki Kaisha | Tiltable-body apparatus and method of fabricating the same |
| CN1538192A (en) * | 2003-04-14 | 2004-10-20 | 威海双丰电子传感有限公司 | Acceleration earthquake sensor |
| CN101038298A (en) * | 2007-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof |
| CN102495234A (en) * | 2011-11-23 | 2012-06-13 | 中国科学院上海微系统与信息技术研究所 | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method |
| CN104535797A (en) * | 2014-12-27 | 2015-04-22 | 中国人民解放军国防科学技术大学 | Single-piece double-shaft butterfly wing type micromechanical accelerometer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090183570A1 (en) * | 2008-01-18 | 2009-07-23 | Custom Sensors & Technologies, Inc. | Micromachined cross-differential dual-axis accelerometer |
-
2015
- 2015-09-01 CN CN201510550450.2A patent/CN105137120B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488862A (en) * | 1993-10-18 | 1996-02-06 | Armand P. Neukermans | Monolithic silicon rate-gyro with integrated sensors |
| EP1234799A2 (en) * | 2001-02-22 | 2002-08-28 | Canon Kabushiki Kaisha | Tiltable-body apparatus and method of fabricating the same |
| CN1538192A (en) * | 2003-04-14 | 2004-10-20 | 威海双丰电子传感有限公司 | Acceleration earthquake sensor |
| CN101038298A (en) * | 2007-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof |
| CN102495234A (en) * | 2011-11-23 | 2012-06-13 | 中国科学院上海微系统与信息技术研究所 | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method |
| CN104535797A (en) * | 2014-12-27 | 2015-04-22 | 中国人民解放军国防科学技术大学 | Single-piece double-shaft butterfly wing type micromechanical accelerometer |
Non-Patent Citations (1)
| Title |
|---|
| 一种扭摆式硅微机械加速度传感器;毋正伟;《传感器与微系统》;20060820;第25卷(第8期);第85-88页 * |
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