CN100552453C - Symmetry straight beam structure condenser type micro-acceleration sensor and preparation method thereof - Google Patents
Symmetry straight beam structure condenser type micro-acceleration sensor and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of symmetrical straight beam structure condenser type micro-acceleration sensor and preparation method thereof.Its spy be that described acceleration transducer is connected with outer support frame by a centrosymmetric mass, outer support frame, mass the eight straight elastic beam structures of symmetry and upper and lower cover plate up and down forms.One end of every straight elastic beam is connected mass top parallel with elastic beam or side, bottom, and the other end is connected to the outer support frame medial surface vertical with elastic beam.Symmetrical straight beam structure condenser type acceleration transducer provided by the invention can improve sensitivity when significantly reducing transversal effect, adopt microelectromechanical systems technology to make, and is a kind of high performance micro-machine acceleration transducer.
Description
Technical field
The present invention relates to a kind of symmetrical straight beam structure condenser type micro-acceleration sensor and preparation method thereof, belong to the microelectromechanical systems field.
Background technology
Utilize the acceleration transducer of micro mechanical technology manufacturing to have that volume is little, in light weight, cost is low, reliability is high, produce in batches and easily and advantage such as electronic circuit is integrated, can be widely used in many fields such as Aeronautics and Astronautics, automobile, robot, petroleum prospecting, have huge market application foreground.Micro-machine acceleration transducer has become mainstream development direction at present.According to responsive principle, micro-machine acceleration transducer can be divided into condenser type, pressure resistance type, piezoelectric type, electromagnetic type, thermal convection formula and resonant mode etc.And capacitance acceleration transducer has advantages such as temperature effect is little, good reproducibility for pressure resistance type or piezoelectric type, is to develop maximum class sensors at present.
The movable capacitor plate of mass conduct that condenser type micro-acceleration sensor is generally supported by elastic beam, the fixed capacity pole plate with both sides constitutes Differential Detection electric capacity respectively.When extraneous acceleration acted on mass, elastic beam distortion causing mass produced displacement, causes the Differential Detection changes in capacitance, detects the size that the changes in capacitance amount just can be measured acceleration with peripheral interface circuit.Obtain higher equivalent capacity and change in order to obtain higher measurement sensitivity and to reduce the complicacy of peripheral circuit, in design, all adopt to increase electrode area and reducing spacing between the electrode.
The method of making condenser type micro-acceleration sensor has surface micromachined method and body micro-machining.The benefit that adopts the surface micromachined method to make capacitance acceleration transducer is and ic process compatibility, can integrated signal processing circuit, and cost is low, noise is big, shortcomings such as resolution is lower, dynamic range is little, poor stability but also exist.And the advantage that adopts silicon body micro-machining to make capacitance acceleration transducer is advantages such as noise is little, resolution is high, dynamic range is big, good stability, and shortcoming is that volume is big slightly.
The capacitance acceleration transducer that general silicon body micro-machining is made is done movable electrode with the upper and lower surface of mass that elastic beam supports, and then in the above and below of silicon chip each bonding a slice silicon or glass, part corresponding to the mass electrode on it is also made electrode, with the electrode formation differential capacitance on the mass.But the elastic beam of common this structure and responsive mass center be not in same plane, can cause bigger cross sensitivity, be that acceleration signal on the non-sensitive direction also can cause bigger output, as Kampen R.P.V., Wolffenbuttel R.F., Modeling the mechanical behavior ofbulk-micromachined silicon ccelerometers, Sensors and Actuators, A64,1998,137-150. is in order to reduce transversal effect, two silicon chips are carried out Si-Si bonding behind the single face corrosion mass figure respectively again, two-sided etching forms the intermediate mass piece of two-sided all flexible beams, as Henrion W.S., et.al, Sensors structure with L-shaped spring legs, US PatentNo.5,652,384, because its elastic beam is a L type beam, the first rank mode is for detecting mode, second, three rank model frequencies are about 3-4 times of the first rank model frequency, can not significantly reduce the intersecting axle sensitivity of device.
Summary of the invention
The object of the present invention is to provide a kind of symmetrical straight beam structure condenser type micro-acceleration sensor and preparation method thereof, is a kind ofly can suppress transversal effect, high performance micro-machine acceleration transducer greatly.
Symmetrical straight beam structure condenser type micro-acceleration sensor provided by the invention, comprise eight symmetrical up and down straight elastic beam structures and upper and lower cover plate that a centrosymmetric mass, outer support frame, mass are connected with outer support frame, it is characterized in that:
(1) mass is made up of top mass and bottom mass, and straight elastic beam structure is made up of top elastic beam and bottom elastic beam, and outer support frame is made up of apical support framework and bottom support frame;
(2) mass is as the movable electrode that detects electric capacity, and upper and lower cover plate is positioned at the both sides of movable electrode respectively as the fixed electorde that detects electric capacity;
(3) the upper and lower surface of mass is parallel to each other with upper and lower cover plate surface respectively;
(4) end of straight elastic beam is connected mass top in parallel or side, bottom, and the other end is connected to perpendicular outer support frame medial surface.
(5) the overload protection limited block is produced in the lower surface of upper cover plate and the upper surface of lower cover;
(6) mass contact conductor derby is positioned at the gap of outer support frame upper surface, and upper cover plate contact conductor derby is positioned at the upper surface of upper cover plate, and lower cover contact conductor derby is positioned at the lower surface of lower cover.
Described straight elastic beam structure is connected eight drift angles of mass upper surface and lower surface respectively by eight short beams, and the straight elastic beam of mass upper and lower surface is symmetrically distributed.
Described all straight elastic beam shapes, consistent size.
Described straight elastic beam is not limited to be connected the drift angle of mass, can be connected mass top or side, the bottom optional position along its length of side.
Described mass upper surface and lower surface are rectangles or foursquare.
Gap between described mass and the upper and lower cover plate is between 1～10um.
The electrode on the outer support frame surface of described mass contact conductor derby under the electrode lead-out groove is drawn in the gap, realizes electrical isolation by insulation course between mass contact conductor derby and the upper and lower cover plate.
The objective of the invention is that symmetrical straight beam structure condenser type micro-acceleration sensor that method for making as follows makes realizes:
(1) lower surface of the upper surface of top mass silicon chip and bottom mass silicon chip (or upper surface of the lower surface of upper cover plate silicon chip and lower cover silicon chip) corrosion forms the capacitance gap window;
(2) the upper surface photoetching quality block graphics of the lower surface of top mass silicon chip and bottom mass silicon chip, anisotropic etch obtains top mass and bottom mass, and corrosion depth is by the thickness decision of the thickness and the elastic beam of silicon chip;
(3) top mass silicon chip and bottom mass silicon chip are aimed at the mass block structure that the Si-Si direct bonding method forms symmetry;
(4) upper and lower cover plate silicon chip surface is made insulating material, as the insulation course between mass silicon chip and the upper and lower cover plate silicon chip;
(5) upper cover plate silicon chip lower surface, lower cover silicon chip upper surface are made the overload protection limited block, and limited block is an insulating material;
(6) by the straight elastic beam of etching elder generation release mass lower surface, aim at pre-bonding with lower cover silicon chip upper surface then, carry out whole annealing process again after pre-bonding is finished;
(7) discharge the straight elastic beam of mass upper surface again by etching, and then aim at pre-bonding, carry out whole annealing process again after pre-bonding is finished with upper cover plate silicon chip lower surface;
(8) upper cover plate silicon chip upper surface photoetching, corrosion form mass electrode lead-out groove;
(9) remove insulation course, the lower surface sputter or the evaporated metal layer of the upper surface of upper cover plate silicon chip and lower cover silicon chip.
Described mass forms by top mass and bottom mass bonding, and top mass and bottom mass form by the method for anisotropic etch respectively, and straight elastic beam forms by the method for etching.
Described mass electrode lead-out groove forms by isotropy or anisotropic etch upper cover plate silicon chip.
Described micro-acceleration sensor at first is that bottom mass silicon chip and top mass silicon chip are finished bonding when adopting the Si-Si bonding method, and then respectively with lower cover silicon chip and upper cover plate wafer bonding.
Described Si-Si bonding, isotropy or isomerism erosion process are known in those skilled in the art, and the process conditions that can realize such as temperature, concentration are very wide, so should not do concrete qualification.
Generally speaking, the invention provides a kind of symmetrical straight beam structure condenser type micro-acceleration sensor structure and method for making, device architecture has high symmetry, has improved the ability of anti-lateral impact of device and torsional pulse, greatly reduce cross sensitivity, further improved performance.The present invention has adopted center mass cube electrode lead-out groove structure, in step deposit upper cover plate electrode and the mass contact conductor derby, has also realized the electric signal isolation between two electrodes, has simplified technology.The present invention has adopted four layers of silicon chip to aim at the methods that Si-Si bonding is made sensors, greatly balance on the elastic beam because the thermal stress that bonding produces has improved thermal stability.And, because upper and lower cover plate and intermediate mass piece all are to adopt monocrystalline silicon, the stable performance of acceleration transducer, and can be as required, design different beam length, cantilever thickness and capacitance gap, change the range and the sensitivity of sensor, dirigibility is bigger.
Description of drawings
Fig. 1 (a) is a kind of center sensor mass, elastic beam, the support frame structure vertical view that the present invention proposes.
Fig. 1 (b) is a kind of center sensor mass, elastic beam, the support frame structure sectional view that the present invention proposes.
Fig. 2 is the sensor production technological process of embodiment 1.
Fig. 3 (a) is another kind of center sensor mass, elastic beam, the support frame structure vertical view that the present invention proposes.
Fig. 3 (b) is another kind of center sensor mass, elastic beam, the support frame structure sectional view that the present invention proposes.
Fig. 4 is the sensor production technological process of embodiment 2.
The implication of each digitized representation is among the figure: 1 straight elastic beam, 2 centroplasm gauge blocks, 3 outer support frame; 4 short beams, the optional position that 5 straight elastic beams are connected with mass, 6 top mass silicon chips; 7 bottom mass silicon chips, 8 lower cover silicon chips, 9 upper cover plate silicon chips; 10 mass electrodes are drawn the gap, 11 apical support frameworks, 12 bottom support frames; 13 top masses; 14 bottom masses, capacitance gap on 15,16 times capacitance gaps; 17 bottom overload protection limited blocks; 18 top overload protection limited blocks, the insulation course on 19 lower covers, the insulation course on 20 upper cover plates; 21 bottom elastic beams; 22 top elastic beams, 23 mass contact conductor derbies, 24 upper cover plate contact conductor derbies; 25 lower cover contact conductor derbies; 26 electrode lead-out grooves, 27 upper cover plates, 28 lower covers.
Embodiment
Following examples are set forth the substantive distinguishing features and the marked improvement of the micro-acceleration sensor that the present invention relates to and preparation method thereof, but the present invention only limits to the embodiment that introduces by no means.
Embodiments of the invention 1 relate to a kind of micro-acceleration sensor structure, 1 explanation in conjunction with the accompanying drawings.
Shown in Fig. 1 (a), an end of straight elastic beam 1 is connected the drift angle of centroplasm gauge block 2 by short beam 4, and the other end is connected to perpendicular outer support frame 3.Shown in Fig. 1 (b), the micro-acceleration sensor structure, eight of comprising that a centrosymmetric mass 2, outer support frame 3, centrosymmetric mass 2 be connected with outer support frame 3 are the straight elastic beam structure 1 of symmetry and upper cover plate 27, lower cover 28 up and down.Mass 2 is made up of top mass silicon chip 6 and bottom mass silicon chip 7, and straight elastic beam structure 1 is made up of top elastic beam 22 and bottom elastic beam 21, and outer support frame 3 is made up of apical support framework 11 and bottom support frame 12.Top and bottom overload protection limited block 18,17 are produced in the lower surface of upper cover plate 27 and the upper surface of lower cover 28.Last capacitance gap 15, following capacitance gap 16 are respectively at the upper surface of top mass silicon chip 6, the lower surface of bottom mass silicon chip 7.Upper cover plate contact conductor derby 24 is positioned at the upper surface of upper cover plate 27, and lower cover contact conductor derby 25 is positioned at the lower surface of lower cover 28.The mass electrode on outer support frame 3 surfaces of mass contact conductor derby 23 under electrode lead-out groove 26 is drawn in the gap 10, realizes electrical isolation by insulation course 20,19 respectively between mass contact conductor derby 23 and upper cover plate 27, the lower cover 28.The sensitive direction of this acceleration transducer is a normal direction, do the time spent as outside normal acceleration, increase of capacitor C 1, C2 that the mass electrode constitutes with upper cover plate electrode, lower cover electrode respectively, one reduce, changes in capacitance amount (C1-C2) and the proportional relation of external acceleration signal are by measuring the size that this variable quantity comes the sense acceleration value.
The micro-acceleration sensor method for making that embodiments of the invention 1 relate to describes with reference to process chart shown in Figure 2, mainly comprises following processing step:
(1) top mass silicon chip 6 is two (100) silicon chips of throwing, and after the oxidation, its upper surface utilizes the making of anisotropy rot etching method to go up capacitance gap 15 and the mass electrode is drawn gap 10, and the degree of depth is 3um; Secondary oxidation, back side photoetching movable mass figure, anisotropic etch form top mass 13 and apical support framework 11, as Fig. 2 (a) to the thickness of elastic beam;
(2) bottom mass silicon chip 7 is two (100) silicon chips of throwing, and after the oxidation, its lower surface utilizes the anisotropy rot etching method to make capacitance gap 16 down, and the degree of depth is 3um; Secondary oxidation, positive photoetching movable mass figure, anisotropic etch form bottom mass 14 and bottom support frame 12, as Fig. 2 (b) to the thickness of elastic beam;
(3) centroplasm gauge block 2 and the support frame 3 that Si-Si direct bonding forms symmetry aimed at the back side of top mass 6 with the front of bottom mass 7, as Fig. 2 (c);
(4) lower cover silicon chip 8 is two (100) silicon chips of throwing with upper cover plate silicon chip 9, at first makes insulating material 19,20 on its surface, and as the insulation course between centroplasm gauge block 2 and upper cover plate silicon chip 9, the lower cover silicon chip 8, insulating material can be SiO respectively
2, Si
3N
4, SiC etc., but be not limited thereto;
(5) (limited block is insulating material SiO to make bottom overload protection limited block 17 at the upper surface of lower cover silicon chip 8
2, Si
3N
4, SiC etc., but be not limited thereto), as Fig. 2 (d), the lower surface of upper cover plate silicon chip 9 is made overload protection limited block 18, and (limited block is insulating material SiO
2, Si
3N
4, SiC etc., but be not limited thereto), as Fig. 2 (e);
(6) by the straight elastic beam 21 of etching elder generation release centroplasm gauge block 2 lower surfaces, pre-bonding is aimed at the upper surface of lower cover silicon chip 8 in the back side of bottom mass silicon chip 7, carries out whole annealing process again after pre-bonding is finished, as Fig. 2 (f);
(7) discharge the straight elastic beam 22 of centroplasm gauge block 2 upper surfaces again by etching, and then aim at pre-bonding, carry out whole annealing process again after pre-bonding is finished, as Fig. 2 (g) with the lower surface of upper cover plate silicon chip 9;
(8) the upper surface photoetching of upper cover plate silicon chip 9, corrosion form mass electrode lead-out groove 26;
(9) remove insulation course, the upper surface of the lower surface of lower cover silicon chip 8 and upper cover plate silicon chip 9 is made (sputter, evaporation etc., but be not limited thereto) metal level (Al, Au, Ni etc., but be not limited thereto), form mass contact conductor derby 23, top electrode lead-in wire derby 24 and bottom electrode lead-in wire derby 25, as Fig. 2 (h).
Embodiments of the invention 2 relate to another kind of micro-acceleration sensor structure, are that with the difference of embodiment 1 the distribution position different and capacitance gap of straight elastic beam is different, 3 explanations in conjunction with the accompanying drawings.
Shown in Fig. 3 (a), an end of straight elastic beam 1 is connected centroplasm gauge block 2 by short beam 4 and removes the optional position 5 of drift angle with its length of side of outer, and the other end is connected to perpendicular outer support frame 3.Shown in Fig. 3 (b), the micro-acceleration sensor structure, eight of comprising that a centrosymmetric mass 2, outer support frame 3, mass 2 be connected with outer support frame 3 are the straight elastic beam structure 1 of symmetry and upper cover plate 27, lower cover 28 up and down.Centrosymmetric mass 2 is made up of top mass silicon chip 6 and bottom mass silicon chip 7, and straight elastic beam structure 1 is made up of top elastic beam 22 and bottom elastic beam 21, and outer support frame 3 is made up of apical support framework 11 and bottom support frame 12.Top and bottom overload protection limited block 18,17 are produced in the lower surface of upper cover plate 27 and the upper surface of lower cover 28.Last capacitance gap 15, following capacitance gap 16 are respectively at upper cover plate 27 lower surfaces, lower cover 28 upper surfaces.Upper cover plate contact conductor derby 24 is positioned at the upper surface of upper cover plate 27, and lower cover contact conductor derby 25 is positioned at the lower surface of lower cover 28.The mass electrode on outer support frame 3 surfaces of mass contact conductor derby 23 under electrode lead-out groove 26 is drawn in the gap 10, realizes electrical isolation by insulation course 20,19 respectively between mass contact conductor derby 23 and upper cover plate 27, the lower cover 28.The sensitive direction of this acceleration transducer is a normal direction, do the time spent as outside normal acceleration, increase of capacitor C 1, C2 that the mass electrode constitutes with upper cover plate electrode, lower cover electrode respectively, one reduce, changes in capacitance amount (C1-C2) and the proportional relation of external acceleration signal are by measuring the size that this variable quantity comes the sense acceleration value.
The micro-acceleration sensor method for making that embodiments of the invention 2 relate to describes with reference to process chart shown in Figure 4, mainly comprises following processing step:
(1) top mass silicon chip 6 is two (100) silicon chips of throwing, and after the oxidation, its upper surface utilizes anisotropy rot etching method fabricating quality cube electrode to draw gap 10, and the degree of depth is 3um; Secondary oxidation, back side photoetching movable mass figure, anisotropic etch form top mass 13 and apical support framework 11, as Fig. 4 (a) to the thickness of elastic beam;
(2) bottom mass silicon chip 7 is two (100) silicon chips of throwing, and after the oxidation, positive photoetching movable mass figure, anisotropic etch form bottom mass 14 and bottom support frame 12, as Fig. 4 (b) to the thickness of elastic beam;
(3) centroplasm gauge block 2 and the support frame 3 that Si-Si direct bonding forms symmetry aimed at the back side of top mass 6 with the front of bottom mass 7, as Fig. 4 (c);
(4) lower cover silicon chip 8 is two (100) silicon chips of throwing, and after the oxidation, its upper surface utilizes the anisotropy rot etching method to make capacitance gap 16 down, and the degree of depth is 3um; Make the insulating material 19 on the lower cover then on its surface, as the insulation course between centroplasm gauge block 2 and the lower cover silicon chip 8, insulating material can be SiO
2, Si
3N
4, SiC etc., but be not limited thereto; (limited block is insulating material SiO to make bottom overload protection limited block 17 at the upper surface of lower cover silicon chip 8
2, Si
3N
4, SiC etc., but be not limited thereto), as Fig. 4 (d);
(5) upper cover plate silicon chip 9 is two (100) silicon chips of throwing, and after the oxidation, its upper surface utilizes the anisotropy rot etching method to make and goes up capacitance gap 15, and the degree of depth is 3um; Make the insulating material 20 on the upper cover plate then on its surface, as the insulation course between intermediate mass piece 2 and the upper cover plate silicon chip 9, insulating material can be SiO
2, Si
3N
4, SiC etc., but be not limited thereto; (limited block is insulating material SiO to make top overload protection limited block 18 at the lower surface of upper cover plate silicon chip 9
2, Si
3N
4, SiC etc., but be not limited thereto), as Fig. 4 (e);
(6) by the straight elastic beam 21 of etching elder generation release centroplasm gauge block 2 lower surfaces, pre-bonding is aimed at the upper surface of lower cover silicon chip 8 in the back side of bottom mass silicon chip 7, carries out whole annealing process again after pre-bonding is finished, as Fig. 4 (f);
(7) discharge the straight elastic beam 22 of centroplasm gauge block 2 upper surfaces again by etching, and then aim at pre-bonding, carry out whole annealing process again after pre-bonding is finished, as Fig. 4 (g) with the lower surface of upper cover plate silicon chip 9;
(8) the upper surface photoetching of upper cover plate silicon chip 9, corrosion form movable mass electrode lead-out groove 26;
(9) remove insulation course, the upper surface of the lower surface of lower cover silicon chip 8 and upper cover plate silicon chip 9 is made (sputter, evaporation etc., but be not limited thereto) metal level (Al, Au, Ni etc., but be not limited thereto), form mass contact conductor derby 23, top electrode lead-in wire derby 24 and bottom electrode lead-in wire derby 25, as Fig. 4 (h).
Claims (3)
1, a kind of symmetrical straight beam structure condenser type micro-acceleration sensor comprises that centrosymmetric mass, outer support frame, a mass are attached thereto straight elastic beam and the upper and lower cover plate that connects;
Wherein, (1) mass is made up of top mass and bottom mass, and straight elastic beam structure is made up of top elastic beam and bottom elastic beam, and outer support frame is made up of apical support framework and bottom support frame;
(2) mass is as the movable electrode that detects electric capacity, and upper and lower cover plate is positioned at the both sides of movable electrode respectively as the fixed electorde that detects electric capacity;
(3) the upper and lower surface of mass is parallel to each other with upper and lower cover plate surface respectively;
(4) end of straight elastic beam is connected mass top in parallel or side, bottom, and the other end is connected to perpendicular outer support frame medial surface;
(5) the overload protection limited block is produced in the lower surface of upper cover plate and the upper surface of lower cover;
(6) mass contact conductor derby is positioned at the gap of outer support frame upper surface, and upper cover plate contact conductor derby is positioned at the upper surface of upper cover plate, and lower cover contact conductor derby is positioned at the lower surface of lower cover;
It is characterized in that gap between (1) mass and the upper and lower cover plate is between 1～10 μ m;
(2) electrode of the upper surface of the outer support frame of mass contact conductor derby under the electrode lead-out groove is drawn in the gap, between the contact conductor derby of mass and the upper and lower cover plate is to realize electrical isolation by insulation course.
2, the method for making as symmetrical straight beam structure condenser type micro-acceleration sensor according to claim 1, comprise mass and the directly formation of elastic beam, the making of the bonding of upper and lower cover plate silicon chip and mass silicon chip and mass electrode lead-out groove is characterized in that comprising the steps:
(1) lower surface of the upper surface of top mass silicon chip and bottom mass silicon chip, or the upper surface of the lower surface of upper cover plate silicon chip and lower cover silicon chip, corrosion forms the capacitance gap window;
(2) the upper surface photoetching quality block graphics of the lower surface of top mass silicon chip and bottom mass silicon chip, anisotropic etch obtains top mass and bottom mass, and corrosion depth is by the thickness decision of the thickness and the elastic beam of silicon chip;
(3) top mass silicon chip and bottom mass silicon chip are aimed at the mass block structure that the Si-Si direct bonding method forms symmetry;
(4) upper and lower cover plate silicon chip surface is made insulating material, as the insulation course between mass silicon chip and the upper and lower cover plate silicon chip;
(5) upper cover plate silicon chip lower surface, lower cover silicon chip upper surface are made the overload protection limited block, and limited block is an insulating material;
(6) by the straight elastic beam of etching elder generation release mass lower surface, aim at pre-bonding with lower cover silicon chip upper surface then, carry out whole annealing process again after pre-bonding is finished;
(7) discharge the straight elastic beam of mass upper surface again by etching, and then aim at pre-bonding, carry out whole annealing process again after pre-bonding is finished with upper cover plate silicon chip lower surface;
(8) upper cover plate silicon chip upper surface photoetching, corrosion form mass electrode lead-out groove;
(9) remove insulation course, the lower surface sputter or the evaporated metal layer of the upper surface of upper cover plate silicon chip and lower cover silicon chip form mass contact conductor derby, top electrode lead-in wire derby and bottom electrode lead-in wire derby.
3, the method for making of symmetrical straight beam structure condenser type micro-acceleration sensor according to claim 2 is characterized in that mass electrode lead-out groove forms by isotropy or anisotropic etch upper cover plate silicon chip.
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| US8322216B2 (en) * | 2009-09-22 | 2012-12-04 | Duli Yu | Micromachined accelerometer with monolithic electrodes and method of making the same |
| CN101858929B (en) * | 2010-05-21 | 2012-09-05 | 中国科学院上海微系统与信息技术研究所 | Capacitive micro-acceleration sensor with symmetrically combined elastic beam structure and production method thereof |
| CN102128953B (en) * | 2010-12-10 | 2012-10-17 | 中国科学院上海微系统与信息技术研究所 | Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure |
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| CN102642801B (en) * | 2012-04-27 | 2015-03-25 | 中国科学院上海微系统与信息技术研究所 | Double-faced parallel symmetric silicon beam mass block structure and method for preparing same |
| CN102645556B (en) * | 2012-05-03 | 2014-05-28 | 中国科学院声学研究所 | Silicon micro acceleration sensor |
| CN102879609B (en) * | 2012-10-26 | 2013-11-27 | 中国科学院上海微系统与信息技术研究所 | Capacitive acceleration transducer for H-shaped beam and manufacturing method thereof |
| CN102879608B (en) * | 2012-10-26 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | Capacitive acceleration transducer for bending elastic beam and manufacturing method |
| CN104296784B (en) * | 2013-07-19 | 2017-02-15 | 中国科学院地质与地球物理研究所 | MEMS detection device and manufacturing technology thereof |
| CN105137120B (en) * | 2015-09-01 | 2018-04-13 | 中国人民解放军国防科学技术大学 | A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof |
| CN107045073B (en) * | 2017-02-07 | 2019-07-09 | 中国科学院上海微系统与信息技术研究所 | Single silicon-chip double-sided symmetrical folds girder construction micro-acceleration sensor and preparation method thereof |
| CN115728511A (en) * | 2021-08-25 | 2023-03-03 | 上海拜安传感技术有限公司 | Sensitive structure and forming method thereof |
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