CN105182005A - Low stress accelerometer - Google Patents
Low stress accelerometer Download PDFInfo
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- CN105182005A CN105182005A CN201510661916.6A CN201510661916A CN105182005A CN 105182005 A CN105182005 A CN 105182005A CN 201510661916 A CN201510661916 A CN 201510661916A CN 105182005 A CN105182005 A CN 105182005A
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Abstract
The invention relates to a low stress accelerometer, including: a. a substrate (13) in which shallow cavities (2) and a substrate anchor point (5) are arranged; b. a central anchor point (16) arranged in a middle part of an electrode structure layer (1), two sides of the central anchor point (16) being symmetrically provided with at least one suspension electrode (4), the suspension electrodes (4) being correspondingly matched with the shallow cavities (2) below, and upper surfaces of the suspension electrodes (4) are provided with upward movable gaps (11); c. a movable structure layer (15) and a movable structure (10) arranged therein, a middle part of the movable structure layer being provided with an upper layer anchor point (18) which is in bonding connection with the central anchor point (16); and d. a cap (14). The low stress accelerometer provided by the invention has the advantages that influence of thermal stress on electrode structures is substantially reduced, so that deformation of the electrode structures hardly occurs in a full-temperature range, thereby ensuring symmetry of capacitance after left and right sides of the device in the full-temperature range, and improving full-temperature performance of a sensor.
Description
Technical field
The invention belongs to micromechanics electronic technology field, specifically a kind of low stress accelerometer.
Background technology
The development of MEMS (micro electro mechanical system), has greatly promoted the progress of sensor technology, has achieved the microminiaturization of acceleration transducer.The various ways such as existing condenser type, piezoelectric type, pressure resistance type, thermal convection, tunnel current formula and resonant mode.The capacitive accelerometer utilizing miromaching to make measuring accuracy, temperature characterisitic, utilize electrostatic force to carry out closed-loop measuring and self-inspection and easily integrated etc. with electronic circuit in there is the advantage of uniqueness, the numerous areas such as Aero-Space, petroleum prospecting, seismic monitoring, Medical Instruments can be widely used in, there is wide market application scape.
The microstructure of capacitor MEMS acceleration meter comprises sensitive structure and electrode structure usually.By the inertial force that sensitive structure input acceleration causes, mems accelerometer degree of will speed up signal converts electrical signal to.As a kind of force sensitive device, variation of ambient temperature causes thermal stress can cause the deformation of sensitive structure or fixed electorde, thus causes accelerometer zero output shift, and the full temperature hydraulic performance decline of sensor, reduces the synthesis precision of sensor.
At present, a kind of related art scheme reduces by the contact area reducing tube shell bottom and chip the chip thermal stress that variation of ambient temperature causes, technique scheme is the ameliorative way of encapsulation, need to increase Making mold expense, and consistance in processes process of tube shell bottom and chip contact area and reliability poor.
Summary of the invention
The present invention affects problem in order to solve thermal stress that existing Z-axis direction capacitor MEMS acceleration meter causes due to temperature variation to device performance, there is provided a kind of and can reduce the accelerometer of thermal stress to component influences, adopt MEMS bulk silicon technological, processing technology is simple, reliability, the consistance of product are good, can realize batch micro operations.
For achieving the above object, present invention employs following technical scheme:
A kind of low stress accelerometer, is characterized in that comprising:
A. substrate, is provided with shallow chamber and substrate anchor point in the middle part of substrate;
B. with the electrode structure layer of substrate bonding, be provided with the first window corresponding with shallow chamber in the middle part of electrode structure layer, be provided with center anchor point in the middle part of first window, it is connected on electrode structure layer with semi-girder, and anchor point bonding corresponding to substrate anchor point in center connects;
The symmetria bilateralis of first window center anchor point is provided with at least one suspension electrode, suspension electrode and shallow chamber corresponding matching below, the upper surface of suspension electrode is lower than electrode structure layer upper surface one segment distance, this distance is suspension electrode upwards free gap, and suspension electrode both sides are respectively equipped with folding clamped beam and are connected with electrode structure layer;
C. with the movable structure layer of electrode structure layer bonding, the Second Window corresponding to first window is provided with in the middle part of movable structure layer, movable structure is provided with in Second Window, movable structure forms free gap with suspension electrode below, be provided with upper strata anchor point in the middle part of movable structure, upper strata anchor point closes with center anchor point corresponding keys below and is connected;
Movable structure layer side is provided with one group of pad point, each pad point is respectively equipped with contact conductor, middle contact conductor bonding corresponding to the semi-girder in lower electrodes structural sheet connects, and the contact conductor of both sides connects with the corresponding bonding of folding clamped beam in lower electrodes structural sheet respectively.
D. with the block of movable structure layer bonding.
On the basis of technique scheme, following further technical scheme can be had: in substrate, bottom surface, shallow chamber is provided with the overload-resistant lower salient point prevented adhesion with suspension electrode corresponding matching, and suspension electrode is provided with the overload-resistant upper salient point prevented adhesion with movable structure corresponding matching.
Movable structure in the present invention and sensitive-mass block, for asymmetric mass block, when one-piece construction is subject to the acceleration of Z-axis direction, mass can swing with acceleration thus cause left and right electric capacity differential change, outputed signal by fixed electorde, thus the acceleration of Z-axis direction detected.
This low stress capacitor MEMS acceleration meter structure adopts monocrystalline silicon to be main material.This low stress capacitor MEMS acceleration meter can be divided into three layers from manufacture technics: substrate layer, structural sheet and cap.Sensitive-mass block, semi-girder belong to structural sheet; The electrode structure that both-end is clamped and below it bulk silicon form substrate layer; Cap forms collision end face.
The manufacturing process of this low stress capacitor MEMS acceleration meter structure is: first etching substrate layer forms the movable shallow chamber of electrode structure, electrode structure layer and substrate layer is connected together by Si-Si bonding; Then the movable shallow chamber of sensitive structure and the clamped suspension electrode structure of both-end is formed by etching; Together with being bonded to electrode structure layer by Si-Si bonding by sensitive structure layer subsequently, photoetching and etching is utilized to form sensitive structure; Eutectic bonding is adopted to complete the disk encapsulation of structural sheet and cap; Etching cap front, exposes electrode.
The present invention's tool compared with existing capacitor MEMS acceleration meter structure has the following advantages:
(1) the substrate deformation brought due to extraneous stress, temperature variation in prior art can be delivered on fixed electorde, thus causes the deformation of fixed electorde, makes both sides electric capacity asymmetric, causes sensor output shift.Fixed electorde structural change is in the past the clamped suspension electrode structure of both-end by the present invention, this suspension electrode structure makes accelerometer when variation of ambient temperature, the impact of thermal stress on electrode structure declines to a great extent, make electrode structure almost undeformed within the scope of full temperature, thus ensure that the symmetry of device the right and left electric capacity within the scope of full temperature, improve the full warm nature energy of sensor.
(2) the present invention is by changing device inside electrode structure, reduce the impact of thermal stress on electrode structure, avoid the packaging technology of the outside shell of change and chip, and owing to utilizing soi wafer as electrode structure disk, ensure that consistance and the repeatability of clamped suspension electrode structure; Processing technology is fairly simple, all utilizes known MEMS technology technology to process, and is applicable to producing in enormous quantities.
(3) clamped beam of support electrode structure is designed to folded form by the present invention, and the fixed beam structure of this folded form can increase heat transfer distance, reduces thermal stress further to the impact of electrode structure.
Accompanying drawing explanation
Fig. 1 is for being low stress capacitor MEMS acceleration meter section of structure of the present invention;
Fig. 2 is the A-A cut-open view of Fig. 1;
Fig. 3 is the B-B cut-open view of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing, structure of the present invention is described further.
Low stress capacitor MEMS acceleration meter structure
With reference to Fig. 1, Fig. 2, Fig. 3, a kind of low stress arrangements of accelerometers of the present invention is divided into 4 layers, be respectively substrate layer 13, electrode structure layer 1, movable structure layer 15 and block 14, above-mentioned substrate layer, electrode structure layer, movable structure layer and block are silicon materials and make.
Below be described respectively:
A. substrate 13, is provided with shallow chamber 2 and substrate anchor point 5 in the middle part of substrate 13, in substrate 13 bottom surface, shallow chamber 2 be provided with one group with the overload-resistant lower salient point 12 prevented adhesion of suspension electrode 4 corresponding matching, be provided with silicon dioxide oxide layer 9 above substrate;
B. with the electrode structure layer 1 of substrate 13 bonding, the first window 1a corresponding with shallow chamber 2 is provided with in the middle part of electrode structure layer 1, be provided with center anchor point 16 in the middle part of first window 1a, it is connected on electrode structure layer 1 with semi-girder 17, and center anchor point 16 bonding corresponding to substrate anchor point 5 connects;
The symmetria bilateralis of first window 1a center anchor point 16 is provided with at least one suspension electrode 4, suspension electrode 4 and shallow chamber 2 corresponding matching below, the upper surface of suspension electrode 4 is lower than electrode structure layer 1 upper surface one segment distance, this distance is suspension electrode 4 upwards free gap 11, suspension electrode 4 both sides are respectively equipped with folding clamped beam 7 and are connected with electrode structure layer 1, and suspension electrode 4 is provided with the overload-resistant upper salient point 8 prevented adhesion with movable structure 10 corresponding matching;
The suspension electrode of center anchor point 16 symmetria bilateralis distribution can be 1 and also can be 2, and even more, accompanying drawing is only schematic diagram, does not do several quantitative limitation to suspension electrode structure;
C. to the movable structure layer 15 of electrode structure layer 1 bonding) be provided with the Second Window 15a corresponding with first window 1a in the middle part of movable structure layer 15, movable structure 10 is provided with in Second Window 15a, i.e. sensitive-mass block, movable structure 10 forms free gap 11 with suspension electrode 4 below, two concave-shaped openings are provided with in the middle part of movable structure 10, form upper strata anchor point 18 between concave-shaped openings, upper strata anchor point 18 connects with the corresponding bonding of center anchor point 16 below;
Movable structure layer 15 side is provided with one group of pad point 3, and each pad point 3 is respectively equipped with contact conductor 6, and movable structure layer 15 is made the groove 20 of fitting mutually with pad point 3 and contact conductor 6 shape, and the region that groove 20 surrounds is pad point 3 and contact conductor 6;
Composition graphs 2 and Fig. 3, middle contact conductor 6 connects with the corresponding bonding of semi-girder 17 in lower electrodes structural sheet 1, and the contact conductor 6 of both sides connects with the corresponding bonding of folding clamped beam 7 in lower electrodes structural sheet 1 respectively;
D. with the block 14 of movable structure layer 15 bonding, it is conventional structure.
The advantage of the low stress capacitor MEMS acceleration meter of the embodiment of the present invention is described below in conjunction with accompanying drawing 1.Specifically, when the STRESS VARIATION caused installed by environment temperature, encapsulation and sensor, for existing Z-axis direction capacitor MEMS acceleration meter, the above-mentioned stress caused can make substrate 13 that deformation occurs, because electrode structure 4 directly contacts with substrate 13, therefore drive electrode structure 4 equally deformation to occur, thus cause accelerometer left and right electric capacity asymmetric, cause accelerometer output shift.And for the arrangements of accelerometers with suspension electrode of the embodiment of the present invention, when stress described above causes substrate 13 that deformation occurs, be suspended on substrate 13 because electrode structure 4 both-end is clamped, therefore, substrate 13 can not cause electrode structure 4 that deformation occurs when deformation, ensure that the symmetry of accelerometer left and right electric capacity, thus the stress that variation of ambient temperature is caused and encapsulation, installing the stress produced only is reflected in the distortion of substrate 13, reduce the impact of accelerometer electrode structure 4 by environmental stress, improve synthesis precision and the environmental suitability of accelerometer.
The Z-axis direction capacitor MEMS acceleration meter movable structure utilizing bottom crown to form differential capacitance in prior art has various ways, comprises single anchor point, multiple anchor points etc.In order to advantage of the present invention is described, only schematic diagram is drawn to a kind of movable structure wherein, but the both-end proposed in the present invention clamped suspension electrode structure is all applicable to utilizing the torsional pendulum type Z-axis direction accelerometer of bottom crown formation differential capacitance.
Claims (2)
1. a low stress accelerometer, is characterized in that comprising:
A. substrate (13), substrate (13) middle part is provided with shallow chamber (2) and substrate anchor point (5);
B. with the electrode structure layer (1) of substrate (13) bonding, electrode structure layer (1) middle part is provided with the first window (1a) corresponding with shallow chamber (2), first window (1a) middle part is provided with center anchor point (16), it is connected on electrode structure layer (1) with semi-girder (17), and center anchor point (16) connects with substrate anchor point (5) corresponding bonding;
The symmetria bilateralis at first window (1a) center anchor point (16) is provided with at least one suspension electrode (4), suspension electrode (4) and shallow chamber (2) corresponding matching below, the upper surface of suspension electrode (4) is lower than electrode structure layer (1) upper surface one segment distance, this distance is suspension electrode (4) upwards free gap (11), and suspension electrode (4) both sides are respectively equipped with folding clamped beam (7) and are connected with electrode structure layer (1);
C. with the movable structure layer (15) of electrode structure layer (1) bonding, movable structure layer (15) middle part is provided with the corresponding Second Window (15a) with first window (1a), movable structure (10) is provided with in Second Window (15a), movable structure (10) forms free gap (11) with suspension electrode (4) below, movable structure (10) middle part is provided with upper strata anchor point (18), and upper strata anchor point (18) connects with center anchor point (16) corresponding bonding below;
Movable structure layer (15) side is provided with one group of pad point (3), each pad point (3) is respectively equipped with contact conductor (6), middle contact conductor (6) connects with semi-girder (17) the corresponding bonding in lower electrodes structural sheet (1), and the contact conductor (6) of both sides connects with folding clamped beam (7) the corresponding bonding in lower electrodes structural sheet (1) respectively;
D. with the block (14) of movable structure layer (15) bonding.
2. a kind of low stress accelerometer according to claim 1, it is characterized in that: in substrate (13), shallow chamber (2) bottom surface is provided with the overload-resistant lower salient point (12) prevented adhesion with suspension electrode (4) corresponding matching, and suspension electrode (4) is provided with the overload-resistant upper salient point (8) prevented adhesion with movable structure (10) corresponding matching.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510661916.6A CN105182005B (en) | 2015-10-15 | 2015-10-15 | A kind of accelerometer |
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| CN201510661916.6A CN105182005B (en) | 2015-10-15 | 2015-10-15 | A kind of accelerometer |
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| CN105182005A true CN105182005A (en) | 2015-12-23 |
| CN105182005B CN105182005B (en) | 2018-02-27 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199070A (en) * | 2016-06-24 | 2016-12-07 | 东南大学 | Single anchor points support formula silicon micro-resonance type accelerometer |
| CN109470229A (en) * | 2018-10-25 | 2019-03-15 | 北京航天控制仪器研究所 | A kind of outer stop configurations in silicon micro-inertia sensor shock resistance face |
| CN110568220A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | Anti-interference overload-resistant MEMS accelerometer |
| WO2020167605A1 (en) * | 2019-02-11 | 2020-08-20 | Texas Instruments Incorporated | Differential capacitive sensing system |
| CN114578094A (en) * | 2022-02-28 | 2022-06-03 | 湖南天羿领航科技有限公司 | High-overload torsional pendulum type silicon micro-accelerometer and preparation method thereof |
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| JPH0894666A (en) * | 1994-09-28 | 1996-04-12 | Toyoda Mach Works Ltd | Manufacture of capacitance-type accelerometer |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199070A (en) * | 2016-06-24 | 2016-12-07 | 东南大学 | Single anchor points support formula silicon micro-resonance type accelerometer |
| CN109470229A (en) * | 2018-10-25 | 2019-03-15 | 北京航天控制仪器研究所 | A kind of outer stop configurations in silicon micro-inertia sensor shock resistance face |
| WO2020167605A1 (en) * | 2019-02-11 | 2020-08-20 | Texas Instruments Incorporated | Differential capacitive sensing system |
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| CN110568220A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | Anti-interference overload-resistant MEMS accelerometer |
| CN114578094A (en) * | 2022-02-28 | 2022-06-03 | 湖南天羿领航科技有限公司 | High-overload torsional pendulum type silicon micro-accelerometer and preparation method thereof |
| CN114578094B (en) * | 2022-02-28 | 2024-04-02 | 湖南天羿领航科技有限公司 | High overload torsion type silicon micro accelerometer and preparation method thereof |
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