CN102602879A - Two-step corrosion manufacturing method for resonant beam and support beam of resonance type accelerometer - Google Patents
Two-step corrosion manufacturing method for resonant beam and support beam of resonance type accelerometer Download PDFInfo
- Publication number
- CN102602879A CN102602879A CN2012100593722A CN201210059372A CN102602879A CN 102602879 A CN102602879 A CN 102602879A CN 2012100593722 A CN2012100593722 A CN 2012100593722A CN 201210059372 A CN201210059372 A CN 201210059372A CN 102602879 A CN102602879 A CN 102602879A
- Authority
- CN
- China
- Prior art keywords
- corrosion
- resonance beam
- resonance
- brace summer
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a two-step corrosion manufacturing method for a support beam and a resonant beam of a resonance type accelerometer, which belongs to the field of micro-electronic mechanical systems. The two-step corrosion manufacturing method aims to manufacturing the resonant beam (1) and the support beam (2) which are not positioned on the same plane on the same silicon wafer (3), wherein the resonant beam (1) is positioned on the upper surface of a substrate, and a neutral surface of the support beam (2) and the gravity center of a mass block (4) are positioned on the same plane. The two-step corrosion manufacturing method is characterized, in terms of manufacturing technique, by including corroding the back of the resonant beam (1) to a certain depth by an existing mask corrosion process; photoetching the front and the back of the resonant beam (1), and corroding or etching parts, except for lobe compensation portions of the resonant beam (1) and the mass block (4), of a corrosion masking layer (7); and finally combining masking corrosion with non-masking corrosion to realize one-step molding of the resonant beam (1) and the support beam, wherein the thickness of the resonant beam (1) and the thickness of the support beam (2) simultaneously meet set values. The resonance type accelerometer manufactured by the two-step corrosion manufacturing method is simple in structure, and interference of intersecting axes is low.
Description
Technical field
The present invention relates to the resonance beam of resonance type accelerometer and the manufacturing approach of brace summer; Particularly a kind of mask-no mask corrosion technology of utilizing is made the resonance beam of resonance type accelerometer and two step caustic solutions of brace summer; Belong to microelectromechanical systems (Micro-Electro-Mechanical Systems, MEMS) field.
Background technology
Micro accelerometer is one type of important mechanical quantity sensor.As far back as people's one dimension minitype silicon accelerometer that just begins one's study at the end of the sixties in last century.Begin the large-scale production of one dimension micro accelerometer the end of the eighties.Enter into the nineties, along with science and technology development and demand military, the commercial market, the three-dimensional micro accelerometer that begins one's study is applied to fields such as military affairs, automotive electronics, industrial automation, Robotics, consumer electronics product.Because but micro accelerometer has that volume is little, in light weight, power consumption and advantages such as cost is low, overload capacity is strong, large-scale mass production easy of integration; Not only become the core parts of Micro Inertial Measurement Unit, also be applied to civil areas such as vehicle control, high-speed railway, robot, industrial automation, mine locating, toy, medical treatment rapidly.
Micro accelerometer is the sensor that utilizes the inertia force measurement acceleration of sensing quality.Motion mode according to detecting quality can be divided into linear accelerometer and pendulous accelerometer; Can be pressure resistance type, condenser type, tunnel current formula, resonant mode, thermal convection current formula, piezoelectric accelerometer according to the signal detecting mode branch.According to having or not feedback signal can be divided into open loop deviation formula and closed loop force-balance accelerometer.According to the quantity of sensitive axes, be divided into single shaft, twin shaft and three axis accelerometer.After the nineties in last century; Demand along with the continuous development of MEMS technology and military affairs, commercial market; The acceleration test of single direction can not satisfy the demand of each side; Accelerometer develops to three-dimensional, being used to detect steric acceleration, is civilian project services such as military project projects such as satellite navigation, missile guidance, shell orientation and automobile shockproof protection, self-actuating brake, medical treatment.Three micro accelerometers can be measured three mutually orthogonal axial accelerations simultaneously.Its measuring principle comprises condenser type, pressure resistance type, piezoelectric type and thermal convection current formula, can be divided into multimass piece and single mass system according to the mass number.
The resonant mode acceleration transducer utilizes inertia force to change the axial stress and the strain of resonator, thereby causes that resonant frequency changes, and detects the size that the change of resonance frequency amount obtains acceleration.The resonant mode acceleration transducer can be with directly being converted into stability and the higher frequency signal of reliability by measuring acceleration, and in transmission course, be difficult for the generation distortion, need not through A/D converter can with the digital display circuit interface.In addition, resonant mode acceleration transducer wide dynamic range, sensitivity and resolution ratio height, good stability, certainty of measurement height have reached the sensitivity of 1KHz/g and the noise level of 2 μ g, can satisfy the high performance requirements to acceleration transducer.Electric heating excitation/the pressure drag of Christian Burrer report in 1996 detects the resonant mode acceleration transducer and is made up of mass, support cantilever beam resonant beam.Responsive mass is suspended on the end with two brace summers of its central shaft line parallel and symmetry, and the brace summer other end is fixed on the substrate.Resonance beam one end links to each other with responsive mass, and the other end is fixed on the substrate.When the acceleration on vertical substrates surface acts on the responsive mass, mass will move in vertical direction, cause resonance beam to produce and stretch or compression strain, change the intrinsic frequency of resonance beam, and sensitivity is 250Hz/g.
The same year, D.W.Burns combination micromechanics and surface micromechanical process were made the little beam resonant mode of the polysilicon acceleration transducer that a kind of static excitation/pressure drag detects, and sensor comprises mass, upper-lower seal lid, support elastic beam, two coaxial resonance beam and detects the piezo-resistance composition of resonance beam strain.Mass and spring beam are the interference of symmetrical structure with the reduction intersecting axle, and upper and lower seal cover board is that mass provides extrusion die damping and overload protection.Apply Dc bias on the can.Apply small size alternating voltage on the drive electrode of resonance beam, the electrostatic force of generation drives the resonance beam vibration.The piezo-resistance of the solid Zhi Duan of resonance beam is measured the strain that beam vibration causes, feeds back to drive electrode after the amplification, makes the resonance beam vibration in resonant frequency.Two resonance beam are operated in differential mode, and acceleration increases the resonant frequency of a resonance beam, and another one reduces, to improve sensitivity and common-mode signal (like the temperature cross sensitivity) is suppressed.The range of sensor can be through the size adjustment of brace summer.To the range of 20g, the length of resonance beam, width and thickness are respectively 200 μ m, 40 μ m and 2 μ m, and resonant frequency is 500KHz, Z axle acceleration detection sensitivity is up to 1750Hz/g.
Employing surface micromechanical process such as the Byeung-leu1 Lee of Korea S Seoul national university in 2000 have been developed a kind of differential resonant mode single-axis acceleration sensors (DRXL) of inertial navigation level, and its sensing element is the torsion beam resonator of static excitation.The acceleration analysis of vertical direction utilizes electrostatic stiffness to regulate effect; The inertia force that produces through acceleration changes the electrostatic force that spring beam bears; Realization is to the change of stiffness coefficient, thereby causes change of resonance frequency, and adopts the mass of two shape complementarities to realize variate.Acceleration transducer adopts the terminal double-ended tuning fork that has mass in the face, utilizes inertia force to change the axial force of tuning fork, thereby changes resonant frequency.The resonant frequency of acceleration is 23.4KHz in the face, and sensitivity is up to 128Hz/g, and bandwidth is 110Hz, and precision is 5.2 μ g; The resonant frequency of vertical direction is 12KHz, and sensitivity is up to 70Hz/g, and bandwidth is 100Hz, and precision is 2.5 μ g.
Trey A.Roessig adopted surface micromechanical process to make a kind of resonant mode acceleration transducer of new structure in 1997.Sensor comprises mass, two double-ended tuning forks and brace summer, and double-ended tuning fork connects through the supporting tuning fork at power structure for amplifying two ends.The comb capacitance of tuning fork through transverse movement drives and on resonant frequency, vibrates, and as the part of resonance circuit backfeed loop, to keep vibration.When acceleration acts on the mass, produce the active force of double-ended tuning fork axial direction, change the potential energy of system, thereby change the vibration frequency of tuning fork.The differential output of two double-ended tuning forks can be eliminated the influence (like temperature and intersecting axle disturb) of the first order component of common-mode error to frequency.The resonant frequency that both-end props up tuning fork resonator admittedly is 68KHz, and sensitivity is 45Hz/g.This research group in 2002 has reported the device after a kind of architecture advances again, and the background noise of the device after the Vacuum Package when 300Hz is
2005, people such as V.Ferrari reported that a kind of electric heating excitation/pressure drag that utilizes bulk silicon technological to make detects resonance type accelerometer.The acceleration on chip plane brings out little resonance beam axial stress, changes the resonant frequency of little beam in proportion.Little beam resonant frequency is 700KHz.In 0～3KHz frequency range, measurement sensitivity is 35Hz/g.Introduce the Cross-talk effect of circuit compensation link compensation input and output in the test macro, effectively reduced the crosstalk effect of input and output.
One of difficult point that the resonant mode acceleration transducer is made is how between framework and mass, to make not at conplane brace summer resonant beam; Require resonance beam to be positioned at substrate top surface, and the neutral surface of brace summer will with the center of gravity of mass on same plane.Otherwise can introduce bigger intersecting axle disturbs and measure error.For addressing this problem people such as Christian Burrer make resonance beam and mass on a wafer the first half; And the latter half of on another substrate, making brace summer and mass; Then the two is bonded together, the bonding face difficulty is bigger, is easy to cracking.D.W.Burns utilizes the method for heavy doping etch stop to make brace summer at the chip tow sides, realizes that brace summer neutral surface and mass center of gravity are on same plane.The structure of utilizing the resonance type accelerometer that this method realizes and technological process be complicacy, and brace summer thickness is less.
Summary of the invention
The objective of the invention is to invent a kind of resonance beam (1) of resonance type accelerometer and the manufacturing approach of brace summer (2), on same silicon chip (3), produce not at conplane resonance beam (1) and brace summer (2).Resonance beam (1) and brace summer (2) are positioned at " mouth " font etching tank (6) between mass (4) and the framework (5), and an end props up in the side of mass (4) admittedly, and the other end props up at framework (5) inwall admittedly.Resonance beam (1) is positioned at silicon chip (3) upper surface, and the center of gravity of the neutral surface of brace summer (2) and mass (4) is at same horizontal plane.
For realizing that the technical scheme that above-mentioned purpose the present invention is adopted is: resonance beam of resonance type accelerometer (1) and brace summer (2) are realized one-shot forming through two step anisotropic wet etching process.At first, employing has the mask wet corrosion technique to erode to certain depth from resonance beam (1) back side.Positive then photoetching, in wet etching or dry etching silicon chip (3) the front etch groove (6) except that resonance beam (1) part and mass (4) the convex corner compensation corrosion masking layer (7) partly; Once more, reverse side photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon chip (3) back side etching tank (6) except that mass (4) convex corner compensation part.The one-shot forming of last mask-no mask corrosion realization combining resonance beam (1) and brace summer (2), the thickness of resonance beam (1) and brace summer (2) reaches setting value simultaneously.
The two steps corrosion manufacturing approach of (1) of resonance type accelerometer involved in the present invention and brace summer (2) is characterized in that and can realize through following processing step:
[1] original silicon chip (3) is the twin polishing silicon chip, and thickness is H.
[2] thermal oxide or chemical gas-phase deposition method are made corrosion masking layer (7) at silicon chip (3) front and back.
[3] back side photoetching forms back of the body corrosion window, and the window's position is over against four corners of resonance beam (1) and etching tank (6).The length (along resonance beam (1) length direction) of resonance beam back of the body corrosion window (8) and width (along resonance beam (1) width) are respectively ctg54.7 ° of L and b+2 (H-h); Wherein L is etching tank (a 6) width; The mask width of resonance beam (1) when b is photoetching for the second time, h is the design thickness of resonance beam (1).Etching tank corner back of the body corrosion window (9) is a square, and the length of side equals the length of resonance beam back of the body corrosion window (8).
[4] corrode silicon in the anisotropic etchant, the vertical etches degree of depth is (H+d)/2-h.Wherein, d is the design thickness of brace summer (2).
[5] positive photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon chip (3) the front etch groove (6), but should keep resonance beam (1) part and mass (4) convex corner compensation corrosion masking layer (7) partly.
[6] back side photoetching, the mask in wet etching or dry etching silicon chip (3) back side etching tank (6), but should keep mass (4) convex corner compensation corrosion masking layer (7) partly.
[7] corrode silicon in the anisotropic etchant, corrosion depth equals (H-d)/2 o'clock, moulding when realizing resonance beam (1) and brace summer (2).
Wherein, the anisotropic etch in [7] step of processing step is resonance beam (1) and the one-time formed key of brace summer (2) that realizes resonance type accelerometer, and the situation of change of silicon chip in corrosion process (3) zones of different is following:
[1] silicon materials of etching tank corner back of the body corrosion window (9) are by constantly corrosion, and when corrosion depth equaled (H-d)/2+h, four corners of etching tank (6) were run through.
[2] corrosion depth equals (H-d)/2 o'clock, and resonance beam (1) thickness is h, and brace summer (2) thickness is d, reaches setting value.
[3] positive and negative between etching tank corner back of the body corrosion window (9) the resonant beam back of the body corrosion window (8) all is corroded, and positive silicon materials are had mask corrosion, and the silicon materials at the back side are not had mask corrosion, and its (111) side is replaced by (311) face gradually.If distance is greater than 1.89 (H-d) between resonance beam back of the body corrosion window (8) and the etching tank corner back of the body corrosion window (9), then the cross section of the last brace summer (2) that forms is an isosceles trapezoid.If distance is less than 1.89 (H-d) between resonance beam back of the body corrosion window (8) and the etching tank corner back of the body corrosion window (9), then the cross section of the last brace summer (2) that forms is an isosceles triangle.The cross section of the brace summer of made (2) is isosceles triangle or isosceles trapezoid, and the angle of side and bottom surface is 25.24 °.
Utilizing the effective length of the brace summer (2) of said method corrosion is that (that is thickness is the d part) is ctg54.7 ° of L-(H-d).The length effective length of resonance beam (1) (that is thickness is the h part) is ctg54.7 ° of L-2 (H-h).The cross section of resonance beam (1) is an isosceles trapezoid, and its width of going to the bottom is b+0.59 (d-H)+2.6h, and the width of upper base is b+0.59 (d-H)+6.84h.
The mask pattern of four corners is squares when corroding for the second time in order to make; And the left side that makes brace summer (2) is also in mass (4) scope; The mass length of side should equal b+2 (H-h) ctg54.7+2Z; And greater than b+2 (H-h) ctg54.7+Z+4.24d, wherein Z is a distance between resonance beam (1) back of the body corrosion window (8) and the etching tank corner back of the body corrosion window (9).
The two steps corrosion manufacturing approach of resonance beam of resonance type accelerometer involved in the present invention (1) and brace summer (2) is produced on same silicon chip (3) not at conplane brace summer (2) resonant beam (1); Resonance beam (1) is positioned at substrate top surface; And the center of gravity of the neutral surface of brace summer (2) and mass (4) is on same plane; Make the resonance type accelerometer of making simple in structure, reduced intersecting axle and disturbed and measure error.
Description of drawings
Fig. 1 is the resonance beam (1) of resonance type accelerometer involved in the present invention and the structural representation of brace summer (2).
Fig. 2 is the mask graph of the photoetching first time of manufacturing technology steps of resonance beam (1) and the brace summer (2) of resonance type accelerometer involved in the present invention, and wherein the grey graph area is the zone that masking layer is corroded.
Fig. 3 is that the manufacturing technology steps of resonance beam (1) and brace summer (2) of resonance type accelerometer shown in Figure 2 is along the process chart at AA visual angle.Among the figure:
1-resonance beam 2-brace summer 3-silicon chip
4-mass 5-framework 6-etching tank
7-corrosion masking layer 8-resonance beam back of the body corrosion window 9-etching tank corner back of the body corrosion window
The specific embodiment
Further specify with 1 couple of the present invention of embodiment below in conjunction with accompanying drawing 3, but be not limited to this embodiment.
Embodiment 1: resonance beam (1) thickness is 10 microns, and brace summer (2) thickness is 50 microns, and original silicon chip (3) thickness is 380 microns, 661 microns of etching tank (6) width.The manufacture craft flow process of confirming according to these data is following:
1) thermal oxide is at the silica membrane of 1.5 microns of silicon chip (3) tow sides making thickness.(seeing accompanying drawing 3 [1])
2) back side photoetching forms back of the body corrosion window, and the window's position is over against four corners of resonance beam (1) and etching tank (6).The length (along resonance beam (1) length direction) of resonance beam back of the body corrosion window (8) and width (along resonance beam (1) width) are respectively 661 microns and 724 microns than the length and the width of resonance beam (1).Etching tank corner back of the body corrosion window (9) is a square, and the length of side is 661 microns.(seeing accompanying drawing 3 [2])
3) corrode silicon in 40% potassium hydroxide solution, 205 microns of the vertical etches degree of depth.(seeing accompanying drawing 3 [3])
4) positive photoetching, the slowly-releasing hydrofluoric acid solution corrodes the silicon dioxide masking layer that removes resonance beam (1) and convex corner compensation place in the front etch groove (6).The masking layer width of resonance beam (1) is 200 microns.(seeing accompanying drawing 3 [4])
5) back side photoetching, the silicon dioxide masking layer in slowly-releasing hydrofluoric acid solution corrosion of silicon (3) back side etching tank (6).(seeing accompanying drawing 3 [5])
6) corrode silicon in 40% potassium hydroxide solution, when the vertical etches degree of depth equals 165 microns, moulding when realizing resonance beam (1) and brace summer (2).(seeing accompanying drawing 3 [6])
Utilizing the width of upper base of the resonance beam (1) of above-mentioned processing step corrosion is 73.7 microns, and the width of going to the bottom is 31.3 microns, and the effective length of resonance beam (1) (that is thickness is 10 microns parts) is 137 microns.The effective length of brace summer (2) is that (that is thickness is 50 microns parts) is 427 microns.
Claims (3)
1. two of resonance type accelerometer resonance beam and brace summer steps corrosion manufacturing approach; It is characterized in that: resonance beam of resonance type accelerometer (1) and brace summer (2) are realized one-shot forming through the two steps corrosion of anisotropic wet etching process; At first, employing has mask corrosion technology to erode to certain depth from resonance beam (1) back side; Positive then photoetching, in wet etching or dry etching silicon chip (3) the front etch groove (6) except that resonance beam (1) part and mass (4) the convex corner compensation corrosion masking layer (7) partly; Once more, reverse side photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon chip (3) back side etching tank (6) except that mass (4) convex corner compensation part; At last, the one-shot forming of mask corrosion and no mask corrosion realization combining resonance beam (1) and brace summer (2) is arranged, resonance beam (1) is positioned at substrate top surface, and the center of gravity of the neutral surface of brace summer (2) and mass (4) is on same plane.
2. the two steps corrosion manufacturing approach of resonance type accelerometer resonance beam according to claim 1 and brace summer is characterized in that: it is characterized in that and can realize through following processing step:
[1] original silicon chip (3) is the twin polishing silicon chip, and thickness is H;
[2] thermal oxide or chemical gas-phase deposition method are made corrosion masking layer (7) at silicon chip (3) front and back;
[3] back side photoetching forms back of the body corrosion window, and the window's position is over against four corners of resonance beam (1) and etching tank (6); The length of resonance beam back of the body corrosion window (8) and width are respectively ctg54.7 ° of L and b+2 (H-h); Wherein L is etching tank (a 6) width; The mask width of resonance beam (1) when b is photoetching for the second time; H is the design thickness of resonance beam (1), and etching tank corner back of the body corrosion window (9) is a square, and the length of side equals the length of resonance beam back of the body corrosion window (8);
[4] corrode silicon in the anisotropic etchant, the vertical etches degree of depth is (H+d)/2-h, and wherein d is the design thickness of brace summer (2);
[5] positive photoetching, the corrosion masking layer (7) in wet etching or dry etching silicon chip (3) the front etch groove (6), but should keep resonance beam (1) part and mass (4) convex corner compensation corrosion masking layer (7) partly;
[6] back side photoetching, the mask in wet etching or dry etching silicon chip (3) back side etching tank (6), but should keep mass (4) convex corner compensation corrosion masking layer (7) partly;
[7] corrode silicon in the anisotropic etchant, corrosion depth equals (H-d)/2 o'clock, moulding when realizing resonance beam (1) and brace summer (2).
3. the two steps corrosion manufacturing approach of resonance type accelerometer resonance beam according to claim 1 and brace summer; It is characterized in that: the cross section of resonance beam of made (1) and brace summer (2) is isosceles trapezoid or isosceles triangle, and the angle of side and bottom surface is 25.24 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210059372.2A CN102602879B (en) | 2011-11-23 | 2012-03-01 | Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110374271 | 2011-11-23 | ||
| CN201110374271.X | 2011-11-23 | ||
| CN201210059372.2A CN102602879B (en) | 2011-11-23 | 2012-03-01 | Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102602879A true CN102602879A (en) | 2012-07-25 |
| CN102602879B CN102602879B (en) | 2016-01-06 |
Family
ID=46520753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210059372.2A Expired - Fee Related CN102602879B (en) | 2011-11-23 | 2012-03-01 | Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102602879B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104843633A (en) * | 2014-02-14 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Silicon anisotropic etching method |
| CN107643424A (en) * | 2017-09-21 | 2018-01-30 | 中国电子科技集团公司第四十九研究所 | A kind of pressure resistance type MEMS acceleration chips and preparation method thereof |
| WO2020017498A1 (en) * | 2018-07-17 | 2020-01-23 | 東京計器株式会社 | Method for manufacturing three-dimensionally structured member, method for manufacturing acceleration pickup, acceleration pickup, and acceleration sensor |
| CN110775936A (en) * | 2019-11-18 | 2020-02-11 | 中国电子科技集团公司第二十六研究所 | Miniature three-dimensional stacked MEMS (micro-electromechanical systems) resonance device |
| CN110988398A (en) * | 2019-12-16 | 2020-04-10 | 中国计量大学 | Double-shaft micromechanical resonant accelerometer based on non-coplanar H-shaped resonator and crab leg type supporting beam |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251698B1 (en) * | 1997-05-23 | 2001-06-26 | Sextant Avionique | Method for making a machined silicon micro-sensor |
| US20040075522A1 (en) * | 2002-07-05 | 2004-04-22 | Canon Kabushiki Kaisha | Microstructure and its fabrication method |
| US20040255675A1 (en) * | 2000-06-21 | 2004-12-23 | Input/Output, Inc. | Accelerometer with folded beams |
| CN1959417A (en) * | 2006-11-17 | 2007-05-09 | 中国科学院上海微系统与信息技术研究所 | Micro mechanical capacitance type acceleration transducer, and fabricating method |
| CN101038298A (en) * | 2007-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof |
| CN101066749A (en) * | 2007-06-12 | 2007-11-07 | 中国科学院上海微系统与信息技术研究所 | Cantilever structure and its making process and application |
-
2012
- 2012-03-01 CN CN201210059372.2A patent/CN102602879B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251698B1 (en) * | 1997-05-23 | 2001-06-26 | Sextant Avionique | Method for making a machined silicon micro-sensor |
| US20040255675A1 (en) * | 2000-06-21 | 2004-12-23 | Input/Output, Inc. | Accelerometer with folded beams |
| US20040075522A1 (en) * | 2002-07-05 | 2004-04-22 | Canon Kabushiki Kaisha | Microstructure and its fabrication method |
| CN1959417A (en) * | 2006-11-17 | 2007-05-09 | 中国科学院上海微系统与信息技术研究所 | Micro mechanical capacitance type acceleration transducer, and fabricating method |
| CN101038298A (en) * | 2007-03-16 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof |
| CN101066749A (en) * | 2007-06-12 | 2007-11-07 | 中国科学院上海微系统与信息技术研究所 | Cantilever structure and its making process and application |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104843633A (en) * | 2014-02-14 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Silicon anisotropic etching method |
| CN107643424A (en) * | 2017-09-21 | 2018-01-30 | 中国电子科技集团公司第四十九研究所 | A kind of pressure resistance type MEMS acceleration chips and preparation method thereof |
| CN107643424B (en) * | 2017-09-21 | 2020-03-17 | 中国电子科技集团公司第四十九研究所 | Piezoresistive MEMS acceleration chip and manufacturing method thereof |
| WO2020017498A1 (en) * | 2018-07-17 | 2020-01-23 | 東京計器株式会社 | Method for manufacturing three-dimensionally structured member, method for manufacturing acceleration pickup, acceleration pickup, and acceleration sensor |
| US11584641B2 (en) | 2018-07-17 | 2023-02-21 | TOKYO KEIKl INC. | Method for manufacturing three-dimensionally structured member, method for manufacturing acceleration pickup, acceleration pickup, and acceleration sensor |
| CN110775936A (en) * | 2019-11-18 | 2020-02-11 | 中国电子科技集团公司第二十六研究所 | Miniature three-dimensional stacked MEMS (micro-electromechanical systems) resonance device |
| CN110775936B (en) * | 2019-11-18 | 2023-04-11 | 中国电子科技集团公司第二十六研究所 | Miniature three-dimensional stacked MEMS (micro-electromechanical systems) resonance device |
| CN110988398A (en) * | 2019-12-16 | 2020-04-10 | 中国计量大学 | Double-shaft micromechanical resonant accelerometer based on non-coplanar H-shaped resonator and crab leg type supporting beam |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102602879B (en) | 2016-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102608356A (en) | Double-shaft micromechanical resonant accelerometer structure and manufacturing method thereof | |
| CN102798734B (en) | MEMS triaxial accelerometer and manufacture method thereof | |
| CN102590555B (en) | Resonance dynamic balance capacitance-type triaxial acceleration transducer and manufacture method | |
| CN102608355A (en) | Resonance-equilibrium tunnel current type three-axis acceleration transducer and manufacturing method thereof | |
| CN102495234B (en) | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method | |
| CN100552453C (en) | Symmetry straight beam structure condenser type micro-acceleration sensor and preparation method thereof | |
| US9828242B2 (en) | Accelerometer and its fabrication technique | |
| CN102759637B (en) | MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof | |
| US10900995B2 (en) | Tri-axial MEMS accelerometer | |
| CN101271124B (en) | L-beam piezoresistance type micro-accelerometer and production method thereof | |
| CN106908626B (en) | A kind of capacitance microaccelerator sensitive structure | |
| CN102602879B (en) | Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer | |
| CN111103073A (en) | Multi-parameter cooperative sensitive resonant pressure sensor and preparation method thereof | |
| CN108008150A (en) | A kind of low intersecting axle sensitivity piezoresistive accelerometer structure and production method | |
| US9557346B2 (en) | Accelerometer and its fabrication technique | |
| CN104215236B (en) | A kind of anti-phase vibratory gyroscope of MEMS and manufacturing process thereof | |
| CN109001490B (en) | High-sensitivity torsional pendulum type silicon micro-accelerometer and preparation method thereof | |
| CN107101629B (en) | Silicon micromechanical graphene beam resonant gyroscope | |
| CN202815009U (en) | Accelerometer | |
| CN105182003B (en) | Torsional pendulum type differential capacitance accelerometer and preparation method with buffer structure | |
| CN104181331A (en) | Piezoresistive acceleration sensor and manufacturing method thereof | |
| CN103675344A (en) | Accelerometer and manufacturing process thereof | |
| CN201628723U (en) | Large-capacitor micro-inertia sensor based on slide-film damping | |
| CN109239399B (en) | Resonant accelerometer based on double-fork resonant beam | |
| CN112014597A (en) | Triaxial resonance capacitance type micro-electromechanical accelerometer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160106 Termination date: 20180301 |