CN104181331A - Piezoresistive acceleration sensor and manufacturing method thereof - Google Patents

Piezoresistive acceleration sensor and manufacturing method thereof Download PDF

Info

Publication number
CN104181331A
CN104181331A CN201410427402.XA CN201410427402A CN104181331A CN 104181331 A CN104181331 A CN 104181331A CN 201410427402 A CN201410427402 A CN 201410427402A CN 104181331 A CN104181331 A CN 104181331A
Authority
CN
China
Prior art keywords
mass
acceleration sensor
photoetching
snakelike
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410427402.XA
Other languages
Chinese (zh)
Other versions
CN104181331B (en
Inventor
陈超
赵源
王涛
张龙
胡晓
马家锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN201410427402.XA priority Critical patent/CN104181331B/en
Publication of CN104181331A publication Critical patent/CN104181331A/en
Application granted granted Critical
Publication of CN104181331B publication Critical patent/CN104181331B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Pressure Sensors (AREA)

Abstract

The invention provides a piezoresistive acceleration sensor and a manufacturing method thereof, and belongs to acceleration sensor devices in the field of sensors. The piezoresistive acceleration sensor comprises a supporting frame 1, an elastic cantilever arm 2, a piezoresistor 3, a mass block 4, a glass base 6 and a glass cover plate 7. The piezoresistive acceleration sensor is characterized in that the elastic cantilever arm 2 is an S-shaped elastic cantilever arm, and damping holes 5 which are arranged in an array mode are formed in the mass block. In the piezoresistive acceleration sensor, the elastic cantilever arm is of an S-shaped structure, a beam of the elastic cantilever arm can be made to be longer, response to acceleration is more sensitive, and the sensitivity of the sensor can be effectively increased; the damping holes are formed in the mass block, influence of air resistance can be effectively reduced, the accuracy is guaranteed, meanwhile, the requirements for the package vacuum degree of the sensor are reduced, and the production cost is reduced.

Description

A kind of piezoresistance type acceleration sensor and manufacture method thereof
Technical field
The present invention relates to the acceleration sensor apparatus of sensor field, be specifically related to a kind of piezoresistance type acceleration sensor and manufacture method thereof.
Background technology
Micro-machine acceleration transducer is a kind of important acceleration analysis device, have that volume is little, lightweight, response is fast, be easy to the advantages such as processing, be widely used in the fields such as safe automobile air bag, novel toy, robot, industrial automation, mine locating, earthquake monitoring, military navigation, biologic medical, smart mobile phone, intelligent wearing equipment.The type of acceleration transducer mainly contains pressure resistance type, piezoelectric type, resonant mode, tunnel current formula and condenser type, wherein piezoresistance type acceleration sensor because of dynamic response characteristic and output linearity better, the advantage such as volume is little, low in energy consumption, is widely used in every field.
Piezoresistance type acceleration sensor is to utilize the piezoresistive effect of monocrystalline silicon and the sensor that integrated circuit technique is made, its principle of work is, mass responds detected acceleration movement, cause the voltage dependent resistor (VDR) generation deformation being positioned on beam, voltage dependent resistor (VDR) resistance is changed, can obtain the size of detected acceleration by circuit measuring resistance variations.Traditional acceleration transducer is owing to adopting straight beam structure to cause sensitivity lower, and mass is vulnerable to the impact of air resistance at work, the degree of accuracy of sensor is reduced, and will overcome air resistance, the vacuum tightness that needs to strengthen encapsulation, this can raise the cost, make complex process.
Acceleration transducer adopts micromachining technology manufacture conventionally.Micromachining technology is to grow up on the basis of integrated circuit technology, mainly comprises body micro-processing technology and surperficial micro-processing technology.Body micro-processing technology is mainly to utilize lithographic technique to form three-dimensional structure, is divided into wet etching and dry etching.Wet etching is that the silicon chip of corrosion is inserted to the corrosion of carrying out in the corrosive liquid with definite chemical composition and fixed temperature.The isotropic etch of silicon is that corrosion speed on each corrosion position of silicon equates, such as chemical polishing etc., conventional corrosive liquid is HF-HNO 3etching system, generally at HF and HNO 3in add H 2o or CH 3cOOH.And the anisotropic etch of silicon, refer to the different crystal faces of silicon are had to different corrosion rates, such as, <100> is 100:1 with the corrosion rate ratio of <111> face, based on this corrosive property, can on silicon substrate, process various microstructures.
Dry etching is the corrosion that gas utilizes reactant gas or ion current to carry out.Dry etching can corrode various metals, also can the many nonmetallic materials of etching; Both can isotropic etching, again can anisotropic etching, be integrated circuit technology or MEMS technique common method.Divide by etching principle, can be divided into plasma etching, reactive ion etching and inductively coupled plasma etching.In plasma gas, can realize isotropic plasma etching.
Surface micromachined technology is silica-based upper formation film the technology of film being processed by certain requirement.Thin film deposition generally adopts Films Prepared by APCVD (APCVD), low-pressure chemical vapor phase deposition (LPCVD) and plasma enhanced CVD (PECVD).The processing of film adopts photoetching technique conventionally, by photoetching, the micro mechanical structure figure designing is transferred on silicon chip, then is formed microstructures with various etching processs.In surface micromachined, sometimes to form various hanging structures as microcavity and microbridge, conventionally adopt sacrificial layer technology to realize.
Summary of the invention
The object of the invention is for solve existing piezoresistive transducer sensitivity not high, be subject to the problems such as air resistance impact, encapsulated vacuum degree requirement height.
Technical scheme of the present invention is as follows:
A kind of piezoresistance type acceleration sensor, comprise supporting frame 1, elastic suspended beam arm 2, voltage dependent resistor (VDR) 3, mass 4, substrate of glass 6 and glass cover-plate 7, it is characterized in that, described elastic suspended beam arm 2 is snakelike elastic suspended beam arm, and described mass is provided with the damping hole 5 of array arrangement.
Further, mass is arranged in supporting frame and is connected with supporting frame by four snakelike elastic suspended beam arms, on the snakelike overarm arm near mass one end, is provided with voltage dependent resistor (VDR).
Further, described supporting frame 1 is square, the midpoint on its every limit is fixed respectively a snakelike elastic suspended beam arm, one end of snakelike elastic suspended beam arm is fixed on supporting frame, the other end is fixed on mass, four voltage dependent resistor (VDR)s are separately positioned on snakelike elastic suspended beam arm near mass one end, supporting frame by electrostatic bonding technology respectively with substrate of glass and glass cover-plate bonding, between the lower surface of described mass and substrate of glass, have interval.
A manufacture method for piezoresistance type acceleration sensor, comprises the following steps:
1) at silicon chip double-sided deposition SiO 2;
2) positive photoetching SiO 2, the dense boron of Implantation, does Ohmic contact;
3) positive photoetching SiO 2, the light boron of Implantation, does voltage dependent resistor (VDR);
4) remove SiO 2, double-sided deposition Si 3n 4;
5) back side photoetching Si 3n 4, pre-etching, the thickness of attenuate mass;
6) backside deposition Si 3n 4, photoetching Si 3n 4, wet etching goes out the structure of mass;
7) remove Si 3n 4, positive deposition SiO 2;
8) photoetching SiO 2, sputter Al, photoetching forms Al wire;
9) photoetching SiO 2, photoetching Si forms snakelike overarm arm and damping hole;
10) electrostatic bonding substrate of glass and glass cover-plate.
Wherein, step 3) in voltage dependent resistor (VDR) be processed into by Implantation and diffusion technique, step 6) in adopt anisotropic wet etch to go out the structure of mass, step 9) described in snakelike beam and damping hole all adopt DRIE processes to make.
Beneficial effect of the present invention is:
1, piezoresistance type acceleration sensor provided by the invention is simple in structure, highly sensitive, and reliability is high, is easy to processing.
2, the elastic suspended beam arm in piezoresistance type acceleration sensor provided by the invention adopts serpentine configuration, can make the length of beam of elastic suspended beam arm longer, sensitiveer to the response of acceleration, can effectively increase the sensitivity of sensor.
3, the mass of piezoresistance type acceleration sensor provided by the invention is provided with damping hole, can effectively reduce the impact of air resistance, ensures degree of accuracy, makes sensor require to reduce for the vacuum tightness of encapsulation simultaneously, reduces production costs.
Brief description of the drawings
Fig. 1 is the vertical view of piezoresistance type acceleration sensor of the present invention.
Fig. 2 is the sectional view of piezoresistance type acceleration sensor of the present invention.
Fig. 3 is the wheatstone bridge circuits of the voltage dependent resistor (VDR) composition of piezoresistance type acceleration sensor of the present invention.
Fig. 4 is the processing step of making piezoresistance type acceleration sensor of the present invention.
Wherein, 1 is supporting frame, and 2 is snakelike elastic suspended beam arm, and 3 is voltage dependent resistor (VDR), and 4 is mass, and 5 is damping hole, and 6 is substrate of glass, and 7 is glass cover-plate, and 8 is Al wire, and 9 is silica membrane, and 10 is silicon nitride film.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described further.
Fig. 1 is the vertical view of piezoresistance type acceleration sensor of the present invention, and as shown in Figure 1, piezoresistance type acceleration sensor of the present invention comprises supporting frame 1, four snakelike elastic suspended beam arms 2, voltage dependent resistor (VDR) 3, mass 4, damping hole 5, substrate of glass 6 and glass cover-plates 7.Supporting frame 1 supports mass 4 by snakelike elastic suspended beam arm, and the lower surface of mass 4, higher than the lower surface of supporting frame 1, is convenient to mass and is moved up and down under inertia effect; Elastic suspended beam arm 2 adopts serpentine configuration, can make the length of beam longer, more responsive to the response of acceleration, can effectively increase the sensitivity of sensor; Voltage dependent resistor (VDR) 3 is distributed in elastic suspended beam arm near mass 4 one end, and in the time that mass 4 response accelerations are subjected to displacement, deformation occurs voltage dependent resistor (VDR) 3, resistance variations; Damping hole 5 array arrangements are distributed on mass, can reduce the impact of air resistance on mass 4, have increased the linear characteristic of sensor.
Fig. 2 is the sectional view of piezoresistance type acceleration sensor of the present invention, and substrate of glass 6 and glass cover-plate 7, by the supporting frame laminating of static bonding process and acceleration transducer, play protection and encapsulation effect.
Fig. 3 is four wheatstone bridge circuits that voltage dependent resistor (VDR) 3 consists of Al wire 8, for detection of acceleration.Because four voltage dependent resistor (VDR)s are symmetrically distributed on the snakelike elastic suspended beam arm on mass 4 four limits 2, can reduce to X the coupling of Y-direction acceleration and temperature drift effects.
Fig. 4 is the concrete technology step of piezoresistance type acceleration sensor of the present invention:
1) Fig. 4-a is by pecvd process double-sided deposition SiO on N-shaped <100> twin polishing silicon chip 2film 9;
2) Fig. 4-b is positive etching SiO 2film is outputed Implantation window, then injects dense boron by Implantation at silicon substrate surface, for Ohmic contact;
3) Fig. 4-c is positive etching SiO 2film is outputed Implantation window, then injects light boron by Implantation at silicon substrate surface, forms voltage dependent resistor (VDR);
4) Fig. 4-d is for removing SiO 2film, then by the two-sided accumulation Si of PECVD 3n 4film 10;
5) Fig. 4-e is back-etching Si 3n 4film, by wet etching attenuate mass thickness;
6) Fig. 4-f is back side PECVD deposition Si 3n 4film, etching Si 3n 4, then obtain mass block structure by wet etching;
7) Fig. 4-g is for removing Si 3n 4film, front deposits SiO by PECVD 2film;
8) Fig. 4-h is etching SiO 2film, sputter Al, photoetching Al generates wire;
9) Fig. 4-i is etching SiO 2film, generates damping hole and snakelike girder construction by deep reaction ion etching silicon;
10) Fig. 4-j is for passing through electrostatic bonding technology by glass substrate and glass cover-plate and Bonded on Silicon Substrates.

Claims (5)

1. a piezoresistance type acceleration sensor, comprise supporting frame (1), elastic suspended beam arm (2), voltage dependent resistor (VDR) (3), mass (4), substrate of glass (6) and glass cover-plate (7), it is characterized in that, described elastic suspended beam arm (2) is snakelike elastic suspended beam arm, and described mass is provided with the damping hole (5) of array arrangement.
2. piezoresistance type acceleration sensor according to claim 1, it is characterized in that, described mass is arranged in supporting frame and is connected with supporting frame by four snakelike elastic suspended beam arms, on the snakelike overarm arm near mass one end, is provided with voltage dependent resistor (VDR).
3. piezoresistance type acceleration sensor according to claim 1, it is characterized in that, described supporting frame is square, the midpoint on its every limit is fixed respectively a snakelike elastic suspended beam arm, one end of snakelike elastic suspended beam arm is fixed on supporting frame, the other end is fixed on mass, four voltage dependent resistor (VDR)s are separately positioned on snakelike elastic suspended beam arm near mass one end, supporting frame by electrostatic bonding technology respectively with substrate of glass and glass cover-plate bonding, between the lower surface of described mass and substrate of glass, have interval.
4. a manufacture method for piezoresistance type acceleration sensor, comprises the following steps:
1) at silicon chip double-sided deposition SiO 2;
2) positive photoetching SiO 2, the dense boron of Implantation, does Ohmic contact;
3) positive photoetching SiO 2, the light boron of Implantation, does voltage dependent resistor (VDR);
4) remove SiO 2, double-sided deposition Si 3n 4;
5) back side photoetching Si 3n 4, pre-etching, the thickness of attenuate mass;
6) backside deposition Si 3n 4, photoetching Si 3n 4, wet etching goes out the structure of mass;
7) remove Si 3n 4, positive deposition SiO 2;
8) photoetching SiO 2, sputter Al, photoetching forms Al wire;
9) photoetching SiO 2, photoetching Si forms snakelike beam and damping hole;
10) electrostatic bonding substrate of glass and glass cover-plate.
5. the manufacture method of piezoresistance type acceleration sensor according to claim 4, it is characterized in that, described step 3) in voltage dependent resistor (VDR) be processed into by Implantation and diffusion technique, step 6) in adopt anisotropic wet etch to go out the structure of mass, step 9) described in snakelike beam and damping hole all adopt DRIE processes to make.
CN201410427402.XA 2014-08-27 2014-08-27 A kind of piezoresistance type acceleration sensor and its manufacturing method Expired - Fee Related CN104181331B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410427402.XA CN104181331B (en) 2014-08-27 2014-08-27 A kind of piezoresistance type acceleration sensor and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410427402.XA CN104181331B (en) 2014-08-27 2014-08-27 A kind of piezoresistance type acceleration sensor and its manufacturing method

Publications (2)

Publication Number Publication Date
CN104181331A true CN104181331A (en) 2014-12-03
CN104181331B CN104181331B (en) 2019-04-05

Family

ID=51962551

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410427402.XA Expired - Fee Related CN104181331B (en) 2014-08-27 2014-08-27 A kind of piezoresistance type acceleration sensor and its manufacturing method

Country Status (1)

Country Link
CN (1) CN104181331B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106283505A (en) * 2016-11-09 2017-01-04 珠海格力电器股份有限公司 Washing machine oscillation damping method, device and washing machine
CN109855773A (en) * 2019-01-23 2019-06-07 广西大学 A kind of force snesor with serpentine configuration beam
CN110531114A (en) * 2019-07-26 2019-12-03 西安交通大学 A kind of MEMS three-axis piezoresistance formula accelerometer chip of purely axial deformation and preparation method thereof
CN114233395A (en) * 2021-12-10 2022-03-25 太原理工大学 Robot rescue detection system for mine water-permeable accidents

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010197286A (en) * 2009-02-26 2010-09-09 Kyocera Corp Acceleration sensor and method of manufacturing acceleration sensor
CN102128953A (en) * 2010-12-10 2011-07-20 中国科学院上海微系统与信息技术研究所 Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure
CN102680738A (en) * 2012-03-07 2012-09-19 中北大学 Transverse-interference-resistant silicon nanobelt giant-piezoresistive-effect micro-accelerometer
CN103675347A (en) * 2012-09-21 2014-03-26 中国科学院地质与地球物理研究所 Accelerometer and manufacturing process thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010197286A (en) * 2009-02-26 2010-09-09 Kyocera Corp Acceleration sensor and method of manufacturing acceleration sensor
CN102128953A (en) * 2010-12-10 2011-07-20 中国科学院上海微系统与信息技术研究所 Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure
CN102680738A (en) * 2012-03-07 2012-09-19 中北大学 Transverse-interference-resistant silicon nanobelt giant-piezoresistive-effect micro-accelerometer
CN103675347A (en) * 2012-09-21 2014-03-26 中国科学院地质与地球物理研究所 Accelerometer and manufacturing process thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
孟美玉等: "高g微加速度计的研究", 《传感技术学报》 *
胡雪梅等: "微机械电容式加速度计结构设计分析", 《传感器世界》 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106283505A (en) * 2016-11-09 2017-01-04 珠海格力电器股份有限公司 Washing machine oscillation damping method, device and washing machine
CN106283505B (en) * 2016-11-09 2018-12-21 珠海格力电器股份有限公司 Washing machine oscillation damping method, device and washing machine
CN109855773A (en) * 2019-01-23 2019-06-07 广西大学 A kind of force snesor with serpentine configuration beam
CN110531114A (en) * 2019-07-26 2019-12-03 西安交通大学 A kind of MEMS three-axis piezoresistance formula accelerometer chip of purely axial deformation and preparation method thereof
CN114233395A (en) * 2021-12-10 2022-03-25 太原理工大学 Robot rescue detection system for mine water-permeable accidents
CN114233395B (en) * 2021-12-10 2023-11-17 太原理工大学 Mine accident robot rescue detecting system that permeates water

Also Published As

Publication number Publication date
CN104181331B (en) 2019-04-05

Similar Documents

Publication Publication Date Title
CN102759637B (en) MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof
CN109485011B (en) MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process
Wang et al. Monolithic integration of pressure plus acceleration composite TPMS sensors with a single-sided micromachining technology
CN103900544B (en) MEMS three-axis gyroscope based on thermal expansion flow and machining method thereof
CN101271124B (en) L-beam piezoresistance type micro-accelerometer and production method thereof
KR101927647B1 (en) Tri-axial micro-electro-mechanical gyroscope
CN102590555A (en) Resonance-force balance capacitance type three-axis acceleration transducer and manufacture method
CN108931321B (en) Beam-island-membrane integrated resonant pressure sensor structure and manufacturing method thereof
CN104181331B (en) A kind of piezoresistance type acceleration sensor and its manufacturing method
CN105181231A (en) Pressure sensor of packaging structure and preparation method thereof
CN105021846A (en) Six-axis integrated miniature acceleration sensor and manufacturing method therefor
CN104045049A (en) Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology
CN108008150A (en) A kind of low intersecting axle sensitivity piezoresistive accelerometer structure and production method
CN102879608A (en) Capacitive acceleration transducer for bending elastic beam and manufacturing method
CN104215236B (en) A kind of anti-phase vibratory gyroscope of MEMS and manufacturing process thereof
CN103675346A (en) Accelerometer and manufacturing process thereof
CN102175305B (en) Single chip integrated trivector vibration sensor
CN102879609B (en) Capacitive acceleration transducer for H-shaped beam and manufacturing method thereof
CN102901520B (en) Method for improving temperature stability of capacitor type micromechanical sensor and micromechanical sensor
CN214621218U (en) Full-bridge double-push-pull flow z-axis film gyroscope
CN102602879B (en) Two step corrosion manufacture methods of resonance type accelerometer resonance beam and brace summer
CN109579811B (en) Butterfly wing type micro gyroscope adopting polygonal vibrating beam and preparation method thereof
CN104198762A (en) Eight-beam symmetrical silicon micro-accelerometer
CN212082392U (en) T-shaped micro-mechanical double-shaft film gyroscope with single heat source
CN111595315B (en) T-shaped push-pull flow micromechanical double-shaft film gyroscope

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190405

Termination date: 20210827

CF01 Termination of patent right due to non-payment of annual fee