CN102590555A - Resonance-force balance capacitance type three-axis acceleration transducer and manufacture method - Google Patents
Resonance-force balance capacitance type three-axis acceleration transducer and manufacture method Download PDFInfo
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Abstract
The invention discloses a resonance-force balance capacitance type three-axis acceleration transducer and a manufacture method thereof, belonging to the field of microelectro mechanical systems. The resonance-force balance capacitance type three-axis acceleration transducer is structurally characterized by comprising an intermediate silicon sheet (1), an upper cover plate (2) and a lower bottom plate (3), wherein the intermediate silicon sheet (1) comprises a dual-end clamped beam resonators (4), a mass block (6), a support beam (5), a movable electrode (7) and a frame (8). The resonance-force balance capacitance type three-axis acceleration transducer is characterized in that an X axis and a Y axis acceleration signals in a chip plane are detected by adopting the dual-end clamped beam resonator (4) on the aspect of detection principle, the change of the resonance frequency of the dual-end clamped beam resonator (4) reflects the size and the direction of acceleration; and a Z axis acceleration signal in a vertical chip plane is detected by adopting a capacitance type sensitivity principle, and works in a closed loop force balance working mode. The mass block (6) has little motion displacement in the normal of a chip, and the Z axis input acceleration signal has little chiasma interference caused by detection of X axis and Y axis accelerations.
Description
Technical field
The present invention relates to principle of work, structure and the manufacturing approach of 3-axis acceleration sensor; Working mechanism, structure and the method for making of particularly a kind of resonance-dynamic balance capacitance-type triaxial acceleration transducer; Belong to microelectromechanical systems (Micro-Electro-Mechanical Systems, MEMS) field.
Background technology
Miniature acceleration sensor is one type of important mechanical quantity sensor.As far back as people's miniature silicon acceleration sensor of one dimension that just begins one's study at the end of the sixties in last century.Begin the large-scale production of one dimension miniature acceleration sensor the end of the eighties.Enter into the nineties, along with science and technology development and demand military, the commercial market, the three-dimensional micro acceleration transducer that begins one's study is applied to fields such as military affairs, automotive electronics, industrial automation, Robotics, consumer electronics product.Because but miniature acceleration sensor has that volume is little, in light weight, power consumption and advantages such as cost is low, overload capacity is strong, large-scale mass production easy of integration; Not only become the core parts of Micro Inertial Measurement Unit, also be applied to civil areas such as vehicle control, high-speed railway, robot, industrial automation, mine locating, toy, medical treatment rapidly.
Micro accelerometer is the sensor that utilizes the inertial force measurement acceleration of sensing quality.Mode of motion according to detecting quality can be divided into linear accelerometer and pendulous accelerometer; Can be pressure resistance type, condenser type, tunnel current formula, resonant mode, thermal convection formula, piezoelectric acceleration transducer according to the signal detecting mode branch.According to having or not feedback signal can be divided into open loop deviation formula and closed loop force balance type acceleration transducer.According to the quantity of sensitive axes, be divided into single shaft, twin shaft and 3-axis acceleration sensor.After the nineties in last century; Demand along with the continuous development of MEMS technology and military affairs, commercial market; The acceleration test of single direction can not satisfy the increasingly high demand of acceleration transducer; Acceleration transducer forward three-dimensional development being used to detect steric acceleration, is civilian project services such as military project project such as satellite navigation, missile guidance, shell orientation and automobile shockproof protection, self-actuating brake, medical treatment.Three miniature acceleration sensors can be measured three mutually orthogonal axial accelerations simultaneously.Its measuring principle comprises condenser type, pressure resistance type, piezoelectric type and thermal convection formula, can be divided into multimass piece and single mass system according to the mass number.
The 3-axis acceleration sensor of capacitance detecting is realized the most easily, and better performances.T.Mineta had developed a kind of three capacitance acceleration transducers in 1996.Three axial acceleration analysis sensitivity are identical, and the center of gravity of mass utilizes the translation of mass to detect X axle and Y axle acceleration, the tilt detection Z axle acceleration of mass on brace summer.Three the every change of axial acceleration 1g, capacitance gap changes 0.3 μ m, sensitivity 40mV/g, cross sensitivity is about 10%.The researchist of University of California Berkeley in 1997 has developed a kind of monolithic tri-axial capacitive accelerometer that adopts the surface micro processing technology to make on the research basis of single shaft micro-acceleration gauge, adopt three different masses to detect three axial acceleration.The measurement of X, Y axle acceleration utilizes the pectination interdigital capacitor to measure, and the Z axle acceleration of vertical aspect is measured with capacity plate antenna.Sensor adopts the surface micromechanical process manufacturing, and microstructure and cmos circuit are integrated, and structural sheet is the polysilicon of 2 μ m, and circuit contains integrated A/D convertor circuit on feedback closed-loop control circuit and the sheet of Sigma-Delta modulator.The electric capacity of X, Y, Z axle is respectively 101fF, 78fF and 322fF; Interdigital gap is respectively 2.13,2.13 and 2.3 μ m; Noise is
and
the same year; This research group also successfully develops single mass capacitance sensing force balance type three-axis micro accelerometer; Adopt three feeding back closed-loop control systems that contain the Sigma-Delta modulator, the detection electric capacity of each direction respectively uses one.Transducing part comprises mass, four elastic beam and interdigital capacitors that the diagonal angle supports.The plane acceleration relies on interdigital capacitor to detect, the capacitance detecting that the acceleration of vertical direction relies on mass and bottom electrode to form.Microstructure is the thick polysilicons of 2.3 μ m, and interdigital gap when static is 2.2 μ m, and mass is 0.2 μ g.Circuit is the CMOS fabrication techniques of 2 μ m, the 5V power supply.The electric capacity of X, Y, Z axle is respectively 98fF, 98fF and 177fF.Maximum range is 11g, 11g, 5.5g.Sensitivity is respectively 0.24fF/g, 0.24fF/g and 0.82fF/g.Noise is
and
Maximum cross-axis interference-36dB.2003, people such as the Junseok Chae of University of Michigan succeeded in developing a kind of capacitance-type triaxial micro-acceleration gauge.This accelerometer comprises three independently single-axis accelerometers, and polysilicon sensing and drive electrode area are bigger, and the small induction gap that is formed by sacrificial oxide layer is 1.5 μ m only.The size of this accelerometer system is 7 * 9mm
2, range 1g, sensitivity is greater than 5pF/g, and the lowest noise of three axles all is lower than
When working in its XY plane be respectively with the axial lowest noise of Z with the integrated accelerometer afterwards of interface circuit
With
The Y.W.Hsu in Taiwan Industrial Technology Research Institute microsystems technology research centre in 2008 adopts SOG body microcomputer technology and DRIE lithographic technique to develop a kind of three capacitance acceleration transducers, and its planar dimension is merely 1.3 * 1.28mm
2, range ± 2g, its Z axle output sensitivity is up to 1.434V/g, and resolution does
Sensitivity of X axle and cross sensitivity are respectively 1.442V/g and 0.03%, and sensitivity of Y axle and cross sensitivity are respectively 1.241V/g and 0.21%.Hongwei Qu had reported a kind of monolithic integrated capacitor type CMOS-MEMS 3-axis acceleration sensor that adopts single mass to realize in 2008.The amplifying circuit that on chip, is designed with low-power consumption, low noise, two copped waves is to reduce the noise of sensor.The sensitivity of sensors X, Y, Z axle is respectively 520mV/g, 460mV/g, 320mV/g.Correspondingly, its noise level is respectively
, and Chih-Ming Sun in 2010 has reported a kind of single mass three-shaft capacitance acceleration transducer.Comprise transducing part and metering circuit and have only 1.78 * 1.38mm at interior chip area
2, range is 0.8～6g.The sensitivity of X, Y, Z axle is respectively 0.53mV/, and 0.28mV/g and 0.2mV/g, nonlinearity are respectively 2.64%, 3.15% and 3.36%.Cross sensitivity is between 1%～8.3%, and the noise of X, Y, Z axle is respectively
and
Action direction is not the length of side along mass when utilizing the three-axis piezoresistance formula acceleration transducer measurement plane acceleration that voltage dependent resistor (VDR) realizes; But along the diagonal of mass; Make mass decline of the rising in two summits, so the pressure drag change direction of elastic beam is different along the direction of acceleration.Piezoresistance type acceleration sensor also can adopt the strain of the little beam of P type mos transistor measurement.Hidekuni Takao adopted cmos compatible stress sensitive differential amplifier to realize a kind of monolithic integrated tri-axial acceleration meter in 1999.Its cmos signal treatment circuit is produced on the center, and the inertial mass of sensing acceleration is positioned at periphery, is four brace summers between the two, and the beam root is manufactured with the distortion of P type MOS transistor with the beam measuring inertial force and cause.This structure is called peripheral quality structure, can reduce the influence of encapsulation stress.The sensitivity of Z axle is 192mV/g, resolution 0.024g; The sensitivity of X axle and Y axle is 23mV/g, resolution 0.23g.Calendar year 2001 Hidekuni Takao adopts the body micromechanical process to make a kind of low g three axis accelerometer on commercial 0.8 micrometre CMOS process line, adopts the size of the P type MOS transistor sense acceleration on the folded beam, device size 3 * 3mm
2With 6 * 6mm
2, Z axle resolution is 2mg, X axle and Y axle resolution are 10.8mg.
The people such as Q.Zou of University of Southern California in 2004 have reported a kind of three axial compression electrical twining acceleration transducers, adopt a kind of four beam bimorph structures of height symmetry to support a mass.X, the sensitivity of Y and Z axle is respectively 0.9mV/g, 1.13mV/g and 0.88mV/g.2008, Abdul Haseeb Ma reported a kind of three hot acceleration transducers based on the lateral deflection semi-girder that adopt polymer-matrix surface micro fabrication techniques, X, and Y and the sensitivity of Z axle are respectively 10 μ V/g, 14.4 μ V/g and 9.8 μ V/g.People such as A.Chaehoi have developed a kind of 3-axis acceleration sensor of hybrid working mechanism, and the thermal convection mode is adopted in the measurement of X axle and Y axle acceleration, and sensitivity is 370mV/g, and resolution is 30mg.Voltage dependent resistor (VDR) is adopted in the measurement of Z axle acceleration, and sensitivity is 24mV/g, resolution 1g.
In a word, the implementation method of miniature 3-axis acceleration sensor can be divided three classes: [1] is packaged together after 3 single-degree-of-freedom acceleration transducer quadratures are placed, and only actually is the composite module of three miniature single-axis acceleration sensors.There are shortcomings such as poor stability, accommodation are little, assembling difficulty in this method.[2] on same silicon chip, realize responsive 3 axial acceleration, the simplest way is on same substrate, to make 3 independently responsive meta structures.This method needs bigger chip area.[3] adopt a responsive meta structure to realize measurement to 3-axis acceleration.
The detection mode that realizes 3-axis acceleration at present is more single, and three axial accelerations adopt principle of uniformity to detect more.Cross interference is more serious, generally between 3%～25%.
Summary of the invention
The objective of the invention is to invent a kind of novel 3-axis acceleration sensor, with high precision, high resolving power, low intersecting axle interference, low noise measurement and the digitizing output that realizes 3-axis acceleration.
For realizing above-mentioned purpose, the technical scheme that the present invention adopted is: described 3-axis acceleration sensor is made up of middle silicon chip (1), upper cover plate (2) and lower shoe (3).Middle silicon chip (1) is made up of two-end fixed beam resonator (4), brace summer (5), mass (6), movable electrode (7) and framework (8).Adopt responsive three the axial acceleration signals of single mass (6).The upper surface of silicon chip (1) in the middle of two-end fixed beam resonator (4) is positioned at, two-end fixed beam resonator (4) one ends prop up admittedly on four limits of framework (8) upper surface, and the other end props up admittedly on the four edges of mass (6).The center of gravity of the neutral surface of brace summer (5) and mass (6) is in same surface level.X axle and Y axle acceleration in two-end fixed beam resonator (4) the detection chip plane.On middle silicon chip (1), upper cover plate (2) and lower shoe (3), make movable electrode (7), top electrode (9) and the bottom electrode (10) that detects the Z axle acceleration respectively.
The principle of work of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer: under the effect of X axle positive acceleration, mass (6) moves in X-direction.The suffered axial tension stress of one of two-end fixed beam resonator (4) of X-direction increases or axial compression stress reduces, and resonance frequency increases; Another two-end fixed beam resonator (4) axial tension stress of X-direction reduces or axial compression stress increases, and resonance frequency reduces.The size and Orientation of the difference reflection X axle acceleration of two two-end fixed beam resonators (4) resonance frequency of X-direction.Likewise, under the effect of Y axle acceleration, make mass (6) in the Y direction motion, one of two-end fixed beam resonator (4) of Y direction axial tension stress increases or axial compression stress reduces, and resonance frequency increases; Another two-end fixed beam resonator (4) axial tension stress of Y direction reduces or axial compression stress increases, and resonance frequency reduces, the size and Orientation of the difference reflection Y axle acceleration of two two-end fixed beam resonators (4) resonance frequency of Y direction.The Z axle acceleration signal on vertical chip plane adopts the responsive principle of condenser type to detect, and works in closed loop dynamic balance mode of operation.Mass (6) receives the effect of Z axle acceleration and when upper cover plate (2), the electric capacity between mass (6) and the upper cover plate (2) increases, and the electric capacity between mass (6) and the lower shoe (3) reduces.Control circuit will produce one with mass (6) movement tendency electrostatic force in the opposite direction, impel responsive mass (6) to turn back to the equilibrium position.Therefore, mass (6) is very little to moving displacement at chip method, and the acceleration signal of Z axle input is minimum to the cross interference of X axle and Y axle acceleration detection introducing.
The X axle acceleration signal of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer also can only detect with a two-end fixed beam resonator (4); Increase or reduce to reflect the size and Orientation of X axle acceleration according to its resonance frequency, but detection sensitivity is less.Likewise, Y axle acceleration signal also can only detect with a two-end fixed beam resonator (4), increases or reduce to reflect the size and Orientation of Y axle acceleration according to its resonance frequency
The two-end fixed beam resonator (4) of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer both can be a two fixed ends single-beam resonator, also can adopt two fixed ends twin beams resonator or two fixed ends three beam resonators.Can slot on the beam or perforate to improve quality factor or to realize electric isolation.Two fixed ends twin beams resonator is made up of two parallel beams, and the end of beam merges, and props up admittedly with substrate.When making two prong vibrate in opposite phase through suitable energisation mode; Stress and moment in that their merging zone produces are in the opposite direction, cancel each other, so total are minimum through the extraneous energy coupling of solid Zhi Duanyu; The energy loss of vibrational system is little, has higher Q value.The width of the intermediate beam of three girder construction two-end fixed beam resonators (4) equals the width sum of adjacent two beams in the left and right sides, and the three is interconnected into an integral body in the end via the energy isolated area mutually.When three rank mode of oscillations of the antisymmetry phase place of selecting three beam resonators for use during as the resonance mode of beam; Middle beam and two beams on both sides are cancelled out each other because of direction of vibration with moment solid the counter-force that end produces mutually on the contrary; Vibrational energy is stored in resonator inside; Thereby the minimizing energy loss plays the effect that improves the Q value.
The two-end fixed beam resonator (4) of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer adopts the excitation of one of electric heating excitation, photothermal excitation, contrary piezoelectric excitation, electric magnetization, static excitation; Make it be in resonant condition, the resonant frequency signal of its output adopts one of pressure drag detection, electromagnetic detection, piezoelectric detection, optical interference, capacitance detecting to realize.
The basic manufacturing process steps of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer is following:
1) silicon chip that adopts low-resistivity is as middle silicon chip (1), and thermal oxide or CVD method are made insulation film on the low-resistivity silicon chip;
2) photoetching, burn into diffusion, thin film deposition processes combine and on silicon chip, make the vibrator and the vibration detecting element of two-end fixed beam resonator (4).
3) at middle silicon chip (1) positive photoetching two-end fixed beam resonator (4) and mass (6) figure, the forming tank of anisotropic wet corrosion or dry etching two-end fixed beam resonator (4) and mass (6).
4) evaporation or sputtering technology depositing metal film, photoetching combine with etching process and make metal internal lead (13).
5) front protecting, back side photoetching, the insulation film in corrosion or the etching back side window.Anisotropic wet corrosion or dry etching discharge two-end fixed beam resonator (4) and brace summer (5).
6) the silicon wafer to manufacture upper cover plate (2) of employing low-resistivity.Be the mask wet etching or be that the mask dry etching is removed the positive a part of silicon in the face of mass (6) and two-end fixed beam resonator (4) of silicon chip with silicon dioxide, silicon nitride film with photoresist, metallic film; For mass (6) receive the Z axle acceleration chip method to small movements activity space and capacitance gap are provided, also space is provided for two-end fixed beam resonator (4).Sputter or evaporation technology be the depositing metal film at the silicon chip back side, photoetching top electrode (9), and alloying technology makes metallic film and low resistance silicon chip form good Ohmic contact.
7) the silicon wafer to manufacture lower shoe (3) of employing low-resistivity.Be the mask wet etching or be that the mask dry etching is removed the positive a part of silicon in the face of mass (6) lower surface of silicon chip with silicon dioxide, silicon nitride film with photoresist, metallic film, for mass (6) receive the Z axle acceleration chip method to small movements activity space and capacitance gap are provided.Sputter or evaporation technology be the depositing metal film at the silicon chip back side, and alloying technology makes metallic film and low resistance silicon chip form good Ohmic contact, forms bottom electrode (10).
8) front and back of middle silicon chip (1) is faced in the front of upper cover plate (2) and lower shoe (3) respectively; The three is bonded together, and adopts eutectic bonding technology or the conducting resinl sensor chip sealing-in that sealing-in is good to have in the ceramic cartridge of metal level at Can or die bottom.Welding lead between pad on the sensor chip and encapsulation shell, and the metal level of tube shell bottom and a binding post on the shell coupled together, the drawing of realization sensor lower electrode (10) electrical signal.
The upper cover plate (2) and the lower shoe (3) of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer also can adopt the bigger silicon wafer to manufacture of conductivity; But need top electrode (9) and bottom electrode (10) be produced on the one side in the face of mass (6), and need the through-hole interconnection technology to realize drawing of top electrode (9) and bottom electrode (10) electrical signal.
There are following three advantages in resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer: [1] Z axle acceleration signal adopts the dynamic balance mode of operation; Mass (6) is very little to moving displacement at chip method, and the acceleration signal of Z axle input is minimum to X axle and Y axle acceleration detection introducing cross interference.Likewise, mass (6) is experienced X axle and Y axle acceleration signal and displacement in the chip plane can not bring cross sensitivity to the detection of Z axle acceleration signal yet.[2] X axle and Y axle acceleration signal adopt two-end fixed beam resonator (4) measurement that axial stress is had extremely sensitive characteristic; Directly converted into stability and the higher frequency signal of reliability by measuring acceleration; In transmission course, be difficult for producing distortion; Need not through A/D converter can with the digital display circuit interface, measuring accuracy is high, can satisfy the high performance requirements to acceleration transducer.[3] Z axle acceleration signal adopts closed loop dynamic balance mode of operation, has that the linearity is good, dynamic range big, low noise and other advantages.
Description of drawings
Fig. 1 is the structural representation of the middle silicon chip (1) of resonance-dynamic balance capacitance-type triaxial acceleration transducer involved in the present invention.
Fig. 2 is the structural representation as the embodiment of resonance involved in the present invention-dynamic balance capacitance-type triaxial acceleration transducer, and the two-end fixed beam resonator (4) that this embodiment utilizes excitation of polysilicon resistance electric heating and pressure drag to detect detects X axle and Y axle acceleration signal.
Fig. 3 is the manufacture craft process flow diagram of the resonance-dynamic balance capacitance-type triaxial acceleration transducer as the embodiment of the invention.
In the accompanying drawing:
Silicon chip 2-upper cover plate 3-lower shoe in the middle of the 1-
4-two-end fixed beam resonator 5-brace summer 6-mass
7-movable electrode 8-framework 9-top electrode
10-bottom electrode 11-excitation resistance 12-voltage dependent resistor (VDR)
13-internal lead 14-silica membrane 15-polysilicon membrane
The silica 1 7-ion of 16-polycrystalline silicon growth injects window 18-silicon nitride film
The 19-sealing ring
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further specified, but be not limited to this embodiment.
Embodiment:
Utilize technical scheme of the present invention to make a kind of resonance-dynamic balance capacitance-type triaxial acceleration transducer.Wherein X axle and Y axle acceleration signal utilize miniature two-end fixed beam resonator (4) detection that the excitation of polysilicon resistance electric heating, pressure drag detect.Its manufacture craft flow process is following:
1) adopting N type, (100) face, resistivity is that the silicon chip of 0.1 Ω .cm is as middle silicon chip (1).(seeing accompanying drawing 3 [1])
2) thermal oxide, the silica membrane (14) that generation thickness is 1 micron.(seeing accompanying drawing 3 [2])
3) low-pressure chemical vapor phase deposition method deposit polysilicon membrane (15), 1 micron of thickness.(seeing accompanying drawing 3 [3])
4) thermal oxide, part polysilicon membrane (15) is oxidized to silicon dioxide (16), and the ion that photoetching and etching process combine to make excitation resistance (11) and voltage dependent resistor (VDR) (12) injects window (17).(seeing accompanying drawing 3 [4])
5) boron ion implantation manufacturing polycrystalline silicon excitation resistance (11) voltage dependent resistor (VDR) (12).Annealing is 30 minutes in 950 ℃, oxygen atmosphere, activates the doped with boron ion.(seeing accompanying drawing 3 [5])
6) front photoresist protection, the silicon dioxide (16) at the slowly-releasing hydrofluoric acid solution corrosion back side removes photoresist.The polysilicon membrane (15) at the anisotropic solution corrosion back side.(seeing accompanying drawing 3 [6])
7) low-pressure chemical vapor phase deposition method cvd nitride silicon thin film (18), thickness 250nm.At middle silicon chip (1) positive photoetching two-end fixed beam resonator (4) and mass (6) figure, the forming tank of anisotropic wet corrosion or dry etching two-end fixed beam resonator (4) and mass (6); (seeing accompanying drawing 3 [7])
8) lithography contact hole, silicon nitride film in the dry etching contact hole and silica membrane.Photoetching combines with film deposition art and makes metal internal lead (13).(seeing accompanying drawing 3 [8])
9) positive photoetching sealing ring (19) figure, electron beam evaporation technique deposit Schott 8329 glass, stripping technology is made sealing ring (19).(seeing accompanying drawing 3 [9])
10) front protecting, back side photoetching, silicon nitride film at the dry etching back side (18) and silica membrane (14) remove photoresist.There is mask corrosion to combine and corrodes formation two-end fixed beam resonator (4) and brace summer (5) with no mask corrosion.(seeing accompanying drawing 3 [10])
11) adopt other a slice N type, (100) face, resistivity is the silicon wafer to manufacture upper cover plate (2) of 0.1 Ω .cm.The thermal oxidation method silicon dioxide thin film growth.Remove the positive a part of silicon of silicon chip with the silica membrane for the mask wet etching in the face of mass (6) and two-end fixed beam resonator (4); For mass (6) receive the Z axle acceleration chip method to small movements activity space and capacitance gap are provided, also space is provided for two-end fixed beam resonator (4).Slowly-releasing hydrofluoric acid solution corrode silicon dioxide film.Sputter or evaporation technology be the depositing metal film at the silicon chip back side, photoetching top electrode (9), and alloying technology makes metallic film and low resistance silicon chip form good Ohmic contact.(seeing accompanying drawing 3 [11])
12) adopt other a slice N type, (100) face, resistivity is the silicon wafer to manufacture lower shoe (3) of 0.1 Ω .cm.The thermal oxidation method silicon dioxide thin film growth.Remove the positive a part of silicon of silicon chip with the silica membrane for the mask wet etching in the face of mass (6), for mass (6) receive the Z axle acceleration chip method to small movements activity space and capacitance gap are provided.Slowly-releasing hydrofluorite corrode silicon dioxide film.Sputter or evaporation technology be the depositing metal film at the silicon chip back side, and alloying technology makes metallic film and low resistance silicon chip form good Ohmic contact, forms bottom electrode (10).(seeing accompanying drawing 3 [12])
13) front and back of middle silicon chip (1) is faced in the front of upper cover plate (2) and lower shoe (3) respectively; The three is bonded together, and adopts eutectic bonding technology or the conducting resinl sensor chip sealing-in that sealing-in is good to have in the ceramic cartridge of metal level at Can or die bottom.Welding lead between pad on the sensor chip and encapsulation shell, and the metal level of tube shell bottom and a binding post on the shell coupled together, the drawing of realization sensor lower electrode (10) electrical signal.The welding outer lead.(seeing accompanying drawing 3 [13])
Claims (6)
1. resonance-dynamic balance capacitance-type triaxial acceleration transducer; It is characterized in that: described 3-axis acceleration sensor is made up of middle silicon chip (1), upper cover plate (2) and lower shoe (3), and middle silicon chip (1) is made up of two-end fixed beam resonator (4), brace summer (5), mass (6), movable electrode (7) and framework (8); The upper surface of silicon chip (1) in the middle of two-end fixed beam resonator (4) is positioned at, two-end fixed beam resonator (4) one ends prop up at framework (8) upper surface admittedly, and the other end props up admittedly on the four edges of mass (6); The center of gravity of the neutral surface of brace summer (5) and mass (6) is in same surface level; X axle and Y axle acceleration in four two-end fixed beam resonators (4) detecting sensor chip plane; On middle silicon chip (1), top crown (2) and lower shoe (3), make movable electrode (7), top crown (9) and the bottom electrode (10) that detects the Z axle acceleration respectively.
2. resonance according to claim 1-dynamic balance capacitance-type triaxial acceleration transducer; It is characterized in that: under the effect of X axle positive acceleration; Mass (6) moves in X-direction; The suffered axial tension stress of one of two-end fixed beam resonator (4) of X-direction increases or axial compression stress reduces, and resonance frequency increases, and another two-end fixed beam resonator (4) axial tension stress of X-direction reduces or axial compression stress increases; Resonance frequency reduces, the size and Orientation of the difference reflection X axle acceleration of two two-end fixed beam resonators (4) resonance frequency of X-direction; Mass (6) is moved in Y direction; The axial tension stress of one of two-end fixed beam resonator (4) of Y direction increases or axial compression stress reduces; Resonance frequency increases; Another two-end fixed beam resonator (4) axial tension stress of Y direction reduces or axial compression stress increases, and resonance frequency reduces, the size and Orientation of the difference reflection Y axle acceleration of two two-end fixed beam resonators (4) resonance frequency of Y direction; The Z axle acceleration signal on vertical reference chip plane adopts the responsive principle of condenser type to detect; And work in closed loop dynamic balance mode of operation; Mass (6) receives the effect of Z axle acceleration and when upper cover plate (2), the electric capacity between mass (6) and the upper cover plate (2) increases, and the electric capacity between mass (6) and the lower shoe (3) reduces; Control circuit will produce one with mass (6) movement tendency electrostatic force in the opposite direction, impel responsive mass (6) to turn back to the equilibrium position.
3. resonance according to claim 1-dynamic balance capacitance-type triaxial acceleration transducer; It is characterized in that: the X axle acceleration signal of described 3-axis acceleration sensor also can only detect with a two-end fixed beam resonator (4), increases or reduce to reflect the size and Orientation of X axle acceleration according to its resonance frequency; Y axle acceleration signal also can only detect with a two-end fixed beam resonator (4), increases or reduce to reflect the size and Orientation of Y axle acceleration according to its resonance frequency.
4. resonance according to claim 1-dynamic balance capacitance-type triaxial acceleration transducer; It is characterized in that: the two-end fixed beam resonator (4) of described 3-axis acceleration sensor adopts the excitation of one of electric heating excitation, photothermal excitation, contrary piezoelectric excitation, electric magnetization, static excitation; Make it be in resonant condition, the resonant frequency signal of its output adopts one of pressure drag detection, electromagnetic detection, piezoelectric detection, optical interference, capacitance detecting to realize.
5. resonance according to claim 1-dynamic balance capacitance-type triaxial acceleration transducer is characterized in that: the basic manufacturing process steps of described 3-axis acceleration sensor is following:
1) silicon chip that adopts low-resistivity is as middle silicon chip (1), and thermal oxide or CVD method are made insulation film on the low-resistivity silicon chip;
2) photoetching, burn into diffusion, thin film deposition processes combine and on silicon chip, make the vibrator and the vibration detecting element of two-end fixed beam resonator (4);
3) at middle silicon chip (1) positive photoetching two-end fixed beam resonator (4) and mass (6) figure, the forming tank of anisotropic wet corrosion or dry etching two-end fixed beam resonator (4) and mass (6);
4) evaporation or sputtering technology depositing metal film, photoetching combine with etching process and make metal internal lead (13);
5) front protecting, back side photoetching, the insulation film in corrosion or the etching back side window, anisotropic wet corrosion or dry etching discharge two-end fixed beam resonator (4) and brace summer (5);
6) the silicon wafer to manufacture upper cover plate (2) of employing low-resistivity; Be the mask wet etching or be that the mask dry etching is removed the positive a part of silicon in the face of mass (6) and two-end fixed beam resonator (4) of silicon chip with silicon dioxide, silicon nitride film with photoresist, metallic film; For mass (6) receive the Z axle acceleration chip method to small movements activity space and capacitance gap are provided, also space is provided for two-end fixed beam resonator (4); Sputter or evaporation technology be the depositing metal film at the silicon chip back side; Photoetching top electrode (9), alloying technology make metallic film and low resistance silicon chip form good Ohmic contact;
7) the silicon wafer to manufacture lower shoe (3) of employing low-resistivity; Be the mask wet etching or be that the mask dry etching is removed the positive a part of silicon in the face of mass (6) lower surface of silicon chip with silicon dioxide, silicon nitride film with photoresist, metallic film, for mass (6) receive the Z axle acceleration chip method to small movements activity space and capacitance gap are provided; Sputter or evaporation technology be the depositing metal film at the silicon chip back side, and alloying technology makes metallic film and low resistance silicon chip form good Ohmic contact, forms bottom electrode (10);
8) front and back of middle silicon chip (1) is faced in the front of upper cover plate (2) and lower shoe (3) respectively; The three is bonded together, and adopts eutectic bonding technology or the conducting resinl sensor chip sealing-in that sealing-in is good to have in the ceramic cartridge of metal level at Can or die bottom; Welding lead between pad on the sensor chip and encapsulation shell, and the metal level of tube shell bottom and a binding post on the shell coupled together, the drawing of realization sensor lower electrode (10) electrical signal.
6. resonance according to claim 1-dynamic balance capacitance-type triaxial acceleration transducer; It is characterized in that: upper cover plate of described 3-axis acceleration sensor (2) and lower shoe (3) also can adopt the bigger silicon wafer to manufacture of conductivity; But need top electrode (9) and bottom electrode (10) be produced on the one side in the face of mass (6), and need the through-hole interconnection technology to realize drawing of top electrode (9) and bottom electrode (10) electrical signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210059374.1A CN102590555B (en) | 2011-11-23 | 2012-03-01 | Resonance dynamic balance capacitance-type triaxial acceleration transducer and manufacture method |
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