CN104215231A - MEMS high precision resonant beam closed-loop control gyroscope and manufacturing process thereof - Google Patents
MEMS high precision resonant beam closed-loop control gyroscope and manufacturing process thereof Download PDFInfo
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- CN104215231A CN104215231A CN201310221840.6A CN201310221840A CN104215231A CN 104215231 A CN104215231 A CN 104215231A CN 201310221840 A CN201310221840 A CN 201310221840A CN 104215231 A CN104215231 A CN 104215231A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5663—Manufacturing; Trimming; Mounting; Housings
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Abstract
The invention provides an MEMS (micro-electromechanical system) high precision resonant beam closed-loop control gyroscope, which includes a measurement body, an upper cover plate and a lower cover plate. The measurement body comprises a pedestal, a coupling frame, a mass block connected to the coupling frame, and a fixation block. The pedestal and the fixation block and the fixation block are in fixed connection with the upper cover plate and the lower cover plate. The mass block and the coupling frame are connected through a plurality of elastic beams. A first comb coupling structure is arranged between the mass block and the fixation block. One side of the coupling frame is provided with support beams. The coupling frame is connected to the pedestal through the support beams. The upper part and the lower part of the coupling frame's side wall are respectively provided with a resonant beam, one ends of the resonant beams are connected to the coupling frame and the other ends are connected to the pedestal respectively. Second comb coupling structures are arranged between the resonant beams and the pedestal. And the pedestal and the second comb coupling structures are used for detecting the rotational angular velocity.
Description
Technical field
The present invention relates to sensor field, particularly relate to a kind of gyroscope
Background technology
Gyroscope can the angle and direction that tilts of inspected object, and applies to numerous areas, as steamer, aircraft etc.And when microelectromechanical systems (MEMS) technology constantly improves, many nano level miniature gyroscope will be commercially used fields such as being widely used in automobile, robot, mobile phone, mobile device.
Different from traditional gyroscope, MEMS gyro instrument does not have rotary part, does not need bearing yet.The gyroscope of MEMS have employed the concept of vibrating object sensing angular velocity.Utilize vibration to induce and detect coriolis force.Such as publication number is the Chinese invention patent application of CN101180516, and it utilizes driver to accelerate with X-direction multiple mass, and when angular velocity occurs on Z axis is the rotation of Ω to gyroscope, mass can produce coriolis force F in the Y direction according to following formula
cori.The coriolis force of gyroscope to Y-direction detects, thus can calculate angular velocity of rotation Ω.
F
cori=2mΩv
Wherein, m is the quality of mass, and v is then speed.
Common MEMS gyro instrument, such as notification number is the Chinese utility model patent of CN201828268U, is to detect the capacitance variations that causes because of mass displacement to calculate angular velocity of rotation.But capacitance variations is not digital signal, therefore integrated circuit also needs to carry out the series of processing steps such as filtering, noise reduction, signal conversion to the result detected.Add the complicacy of integrated chip, too increase the Design and manufacture cost of integrated chip.In addition, in signal processing, the situation such as distortion, loss that also has occurs.
And such as publication number is the Chinese invention patent application of CN101135563, its by two-stage lever coriolis force is amplified to be arranged on frame both sides tuning fork resonator on, measure angular velocity of rotation by tuning mode.Although the output of tuning fork resonator is digital signal, due to the restriction of manufacturing process, the size of lever has error, and the size of two masses also may not be consistent, therefore can produce certain error signal; And manufacture the entire area that double quality blocks, lever and tuning fork resonator can increase chip at grade, reduce the integrated level of system.
Summary of the invention
Technical matters to be solved by this invention is the deficiency overcoming above-mentioned prior art, provides one can output digit signals, and highly sensitive gyroscope.
A kind of MEMS high precision resonance beam closed-loop control gyroscope, comprising: measure body, upper cover plate and lower cover, and described measurement body comprises pedestal, coupling frame, the mass be connected with coupling frame and the fixed block being positioned at described mass center; Described pedestal and described fixed block and described upper cover plate and described lower cover are fixedly connected; Described mass is connected by multiple elastic beam with described coupling frame; The first pectination coupled structure is provided with between described mass and described fixed block; The side of described coupling frame is provided with brace summer; Described coupling frame is connected with described pedestal by described brace summer; Top and the bottom of the sidewall of described coupling frame are respectively arranged with resonance beam, and described resonance beam one end is connected with described coupling frame, and the other end is connected with pedestal respectively; The second pectination coupled structure is also provided with between described resonance beam and described pedestal; Described resonance beam and described second pectination coupled structure are for detecting rotational angular velocity.
Gyroscope in the present invention also comprises following subsidiary characteristic:
Described brace summer and described resonance beam are elastic beam.
The square body of hollow out centered by described mass.
Described elastic beam is U-shaped elastic beam.
Described elastic beam is arranged on four end angle places of described mass.
Described first pectination coupled structure is arranged in the clearance space between described mass and described fixed block.
Described mass, described upper cover plate, described lower cover, described first pectination coupled structure and described second coupled structure are provided with electrode.
Described resonance beam and described brace summer are arranged on the same side of the described frame that is coupled.
Described pedestal is provided with groove, and described resonance beam is positioned at described groove.
Described resonance beam is upper and lower two groups, often organizes described resonance beam and comprises two resonance beam, is provided with two to described second pectination coupled structure described in every root between resonance beam and described pedestal; Described in a pair, the second pectination coupled structure is for driving described resonance beam, and another is to for detecting angular velocity of rotation.
Described second pectination coupled structure comprises two comb matched, and one of them comb is connected with described resonance beam, and comb described in another is connected with described pedestal.
Described measurement body adopts the silicon bi-layer structure including upper silicon layer and lower silicon layer, is respectively arranged with buried oxide between every layer of silicon layer.
Described resonance beam and described elastic beam take shape in described upper silicon layer.
A kind of gyrostatic manufacturing process, it is characterized in that, described manufacturing process comprises the following steps:
The first step, by high-temperature oxydation or deposition process, first piece of silicon on insulator front side of silicon wafer and the back side forms layer of silicon dioxide layer respectively;
Second step, by photoetching and etching, the silicon dioxide layer of first piece of silicon on insulator front side of silicon wafer will etch multiple hole being deep to upper silicon layer;
3rd step, deposit one deck silicon nitride layer on first piece of silicon on insulator front side of silicon wafer and the back side;
4th step, by photoetching, etching, removes the silicon nitride layer on the position in first piece of silicon on insulator front side of silicon wafer corresponding to brace summer and silicon dioxide layer respectively, and described upper silicon layer is etched to described buried oxide; Silicon nitride layer on position corresponding to first piece of silicon on insulator silicon chip back side Elastic beam, resonance beam and the gap between fixed block and mass and silicon dioxide layer are removed simultaneously, and described lower silicon layer is etched to described buried oxide;
5th step, by etching, removes described buried oxide, forms one deck elastic beam and resonance beam;
6th step, is etched to certain depth further to the position in first piece of silicon on insulator front side of silicon wafer corresponding to brace summer, forms brace summer;
7th step, by high-temperature oxydation or deposition process, second piece of silicon on insulator front side of silicon wafer and the back side forms layer of silicon dioxide layer respectively;
8th step, by photoetching and etching, the silicon dioxide layer of second piece of silicon on insulator front side of silicon wafer will etch multiple hole being deep to upper silicon layer;
9th step, at second piece of silicon on insulator front side of silicon wafer and back side deposit one deck silicon nitride;
Tenth step, by photoetching, etching, silicon nitride layer on position in second piece of silicon on insulator silicon chip back side corresponding to brace summer, elastic beam, resonance beam and the gap between fixed block and mass and silicon dioxide layer are removed, and described lower silicon layer is etched to described buried oxide;
11 step, by etching, removes described buried oxide;
12 step, removes the silicon nitride layer of first piece and second piece silicon on insulator silicon chip back side and silicon dioxide layer respectively;
13 step, carries out back-to-back silicon-silicon bond conjunction by first piece and second piece of silicon on insulator silicon chip, forms pedestal, fixed block, mass and coupling frame;
14 step, removes the silicon nitride layer of key and rear front side of silicon wafer;
15 step, carrying out deep etching to key and rear front side of silicon wafer being exposed to outer upper silicon layer, forming through hole, thus forming freely movable upper strata elastic beam, resonance beam, upper strata first pectination coupled structure and upper strata second pectination coupled structure;
16 step, removes the silicon dioxide layer of key and rear front side of silicon wafer;
17 step, carries out bonding by key and rear front side of silicon wafer and upper cover plate;
18 step, removes the silicon nitride layer of key and rear silicon chip back side;
19 step, carrying out deep etching to key and rear silicon chip back side being exposed to outer upper silicon layer, forming through hole, thus forming freely movable brace summer, lower floor's elastic beam, lower floor's resonance beam, lower floor first pectination coupled structure and lower floor second pectination coupled structure;
20 step, removes the silicon dioxide layer of key and rear silicon chip back side;
21 step, carries out bonding by key and rear silicon chip back side and lower cover; Form complete gyroscope;
The processing technology of described upper cover plate and lower cover is also comprised:
A, on the bonding face of described upper cover plate and described lower cover respectively by photoetching, deep etching and etch each self-forming depressed area;
B, on described upper cover plate and described lower cover depositing metal, thus formed electrode;
C, with described silicon on insulator wafer bonding before, described upper cover plate silicon chip and described lower cover silicon chip are cleaned;
The method of described deep etching and described etching is one or more methods in following methods: dry etching or wet etching, and described dry etching comprises: the deep reaction ion etching of silicon and reactive ion etching.
The described mordant for etching silicon layer is one or more the combination in following mordant: the xenon difluoride of potassium hydroxide, tetramethyl aqua ammonia, ethylenediamine phosphorus benzenediol or gaseous state.
The described mordant for corrode silicon dioxide layer is one or more the combination in following mordant: the hydrogen fluoride of buffered hydrofluoric acid, 49% hydrofluorite or gaseous state.
Have the following advantages according to a kind of gyroscope provided by the present invention and manufacturing process tool thereof: first, the present invention is that the frequency change by detecting resonance beam detects angular velocity of rotation, the output of frequency change is digital signal, without the need to more after filtering, the process such as signal conversion, conveniently dock with other signal processors, decrease the impact of circuit noise on testing result.Make gyroscope work more stable.Secondly, the structure arranging down two groups of resonance beam in vertical direction carrys out output frequency change with the form of difference, and such output signal can obtain the rate-adaptive pacemaker of twice, and meanwhile, difference output also eliminates the impact that temperature produces resonance beam.In addition, this gyroscope is upwards provided with feedback control system detection side, after the signal detected by the second pectination coupled structure in resonance beam when integrated circuit calculates the displacement of mass, feedback control system can apply feedback voltage on mass, thus mass is maintained equilibrium position.This feedback control system effectively can strengthen the stability of system, reduces the non-linear of system, widens system bandwidth, Reaction time shorten, thus makes detection more accurate.Finally, obtain larger mass by the mode of bonding, improve sensitivity.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the stereographic map measuring body in the present invention.
Fig. 3 is A place enlarged drawing in Fig. 2.
Fig. 4 is B place enlarged drawing in Fig. 2.
Fig. 5 is C place enlarged drawing in Fig. 2.
Fig. 6 is the vertical view measuring body in the present invention.
Fig. 7 is the diagrammatic cross-section of the first step to the 4th step along AA ' line in Fig. 6 of manufacture method.
Fig. 8 is the diagrammatic cross-section of the first step to the 4th step along BB ' line in Fig. 6 of manufacture method.
Fig. 9 is the diagrammatic cross-section of the 5th step to the 7th step along AA ' line in Fig. 6 of manufacture method.
Figure 10 is the diagrammatic cross-section of the 5th step to the 7th step along BB ' line in Fig. 6 of manufacture method.
Figure 11 is the diagrammatic cross-section of the 8th step to the 11 step along AA ' line in Fig. 6 of manufacture method.
Figure 12 is the diagrammatic cross-section of the 8th step to the 11 step along BB ' line in Fig. 6 of manufacture method.
Figure 13 is the diagrammatic cross-section of the 12 step to the 14 step along AA ' line in Fig. 6 of manufacture method.
Figure 14 is the diagrammatic cross-section of the 12 step to the 14 step along BB ' line in Fig. 6 of manufacture method.
Figure 15 is the diagrammatic cross-section of the 15 step to the 17 step along AA ' line in Fig. 6 of manufacture method.
Figure 16 is the diagrammatic cross-section of the 15 step to the 17 step along BB ' line in Fig. 6 of manufacture method.
Figure 17 is the diagrammatic cross-section of the 18 step to the 20 step along AA ' line in Fig. 6 of manufacture method.
Figure 18 is the diagrammatic cross-section of the 18 step to the 20 step along BB ' line in Fig. 6 of manufacture method.
Figure 19 is the diagrammatic cross-section of the 21 step to the 22 step along AA ' line in Fig. 6 of manufacture method.
Figure 20 is the diagrammatic cross-section of the 21 step to the 22 step along BB ' line in Fig. 6 of manufacture method.
Figure 21 is the diagrammatic cross-section of the 23 step along AA ' line in Fig. 6 of manufacture method.
Figure 22 is the diagrammatic cross-section of the 23 step along BB ' line in Fig. 6 of manufacture method.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
With reference to Fig. 1, a kind of gyroscope, comprising: measure body 1, the upper cover plate 2 be connected with described measurement body 1 and lower cover 3; Described measurement body 1 is formed by two pieces of silicon on insulator wafer bondings, and silicon on insulator structure is called for short soi structure, comprising upper silicon layer 4 and lower silicon layer 5; Buried oxide 6 is provided with between described upper silicon layer 4 and lower silicon layer 5.
See Fig. 1 to Fig. 6, described measurement body 1 includes pedestal 11, coupling frame 12, the mass 13 be connected with coupling frame 12 and the fixed block 14 being positioned at described mass 13 center; Described pedestal 11 and described fixed block 14 are fixedly connected with described upper cover plate 2 and described lower cover 3; The side of described coupling frame 12 is provided with brace summer 15; Described coupling frame 12 is connected with described pedestal 11 by described brace summer 15; Described mass 13 is connected by multiple elastic beam 16 with described coupling frame 12; Wherein, brace summer 15 is elastic beam.When there is coriolis force, mass 13 can move in vertical direction, and the mobile of mass 13 can drive coupling frame 12 to swing up and down by elastic beam 16.
See Fig. 1 to Fig. 6, preferably, measuring body 1 is that two pieces of wafer bondings form, and pedestal 11 is the square body of a hollow out, and coupling frame 12, mass 13, fixed block 14 are all positioned at the hollow part of pedestal 11.
See Fig. 1 to Fig. 6, preferably, described mass 13 is the square body of a center hollow out, and elastic beam 16 is U-shaped beam, and is arranged on four corners of mass 13, and block 13 of can ensuring the quality of products like this drives the in the vertical direction displacement of coupling frame 12.In addition, the first pectination coupled structure 17 is also provided with in the clearance space between mass 13 and fixed block 14.Two cover comb 171 of the first pectination coupled structure 17 are connected with mass 13 and fixed block 14 respectively.First pectination coupled structure 17 is vibrated in the horizontal direction back and forth for driving described mass 13.
See Fig. 1 to Fig. 6, be respectively arranged with resonance beam 18 on the top of the sidewall of described coupling frame 12 and bottom, described resonance beam 18 one end is connected with described coupling frame 12, and the other end is connected with pedestal 11 respectively; Preferably, pedestal 11 is also provided with groove 111, one end of resonance beam 18 is connected with coupling frame 12, and the other end is connected with the end of groove 111.The second pectination coupled structure 19 is also provided with between resonance beam 18 and described pedestal 11.The comb 191 of the second pectination coupled structure 19 is connected with resonance beam 18 and pedestal 11 respectively.In one embodiment of the invention, every root resonance beam 18 is provided with two groups of comb 191, a group and vibrates for driving resonance beam 18, another group is for detecting the vibration frequency of resonance beam 18.And the quantity of resonance beam 18 is two groups, setting up and down on the sidewall of coupling frame 12 respectively, and be on same vertical guide.Often organize in resonance beam 18 and have two resonance beam 18.But quantity and the arrangement mode of resonance beam 18 and the second pectination coupled structure 19 are not limited in the present embodiment.
See Fig. 1 to Fig. 6, this gyroscope is provided with electrode in the first pectination coupled structure 17, second pectination coupled structure 19.Operationally, integrated circuit can apply voltage to the first pectination coupled structure 17, thus drives mass 13 to vibrate back and forth in the X-axis direction relative to fixed block 14.Meanwhile, integrated circuit also can apply voltage to two to a pair in the second pectination coupled structure 19, drives resonance beam 18 to vibrate according to certain frequency.Amplitude and the frequency of the voltage exported for the two couple second pectination coupled structure 19 driven are identical, and therefore, when resonance beam 18 is not subject to the stress of axial direction, the vibration frequency of upper and lower two groups of resonance beam 18 should be identical.When there is Y-axis angular velocity of rotation, the mass 13 driven by the first pectination coupled structure 17 can in the vertical direction, and namely Z-direction produces a coriolis force, Coriolis acceleration can allow mass 13 produce upper and lower displacement.Because coupling frame 12 is connected by elastic beam 16 with mass 13, coupling frame 12 also can produce displacement in vertical direction.The brace summer 15 being arranged on the side of coupling frame 12 is fixedly connected with pedestal 11, and coupling frame 12 can be swung for axle in vertical direction with brace summer 15.Swinging up and down of frame 12 of coupling can cause upper and lower two groups of resonance beam 18 to be subject to equal and opposite in direction in the axial direction, the stress that direction is contrary, make vibration frequency one increase of upper and lower two groups of resonance beam 18, a reduction, and both frequency change amplitudes is equal.Second pectination coupled structure 19 can the change of read frequency, then both frequencies is subtracted each other by the form of integrated circuit difference, obtains the output signal of frequency change amplitude twice, and then extrapolates angular velocity of rotation.Because frequency differential output signal is a digital signal, such convenience is connected with other signal processors, simultaneously, when gyroscope be subject to temperature affect time, the vibration frequency of upper and lower two groups of resonance beam 18 can increase simultaneously or reduce, generation amplitude is equal, the deviation that change direction is identical, and the form of being subtracted each other by difference can eliminate temperature to gyrostatic impact.In addition, preferably, mass 13, upper cover plate 2 and lower cover 3 are respectively arranged with electrode, after the swaying direction extrapolating mass 13 and coupling frame 12 according to the testing result of the second pectination coupled structure 19 when integrated circuit and amplitude of fluctuation, a feedback voltage can be applied to upper cover plate 2 or lower cover 3 according to swaying direction and amplitude, mass 13 and coupling frame 12 are returned to equilibrium position, thus form a feedback control system, the stability of effective enhancing system, reduction system non-linear, widen system bandwidth, Reaction time shorten, make detection more accurate.
Then, describe in detail for the manufacture of the gyrostatic manufacturing process in the present invention according to Fig. 6 to Figure 22, comprise the following steps:
The first step, carries out high temperature oxidation process to the positive and negative surface of soi wafer A, and its positive and negative surface forms layer of silicon dioxide layer 7 respectively; Or utilize chemical gaseous sedimentation (CVD) deposit layer of silicon dioxide layer 7 on positive and negative surface;
Second step, to front and the backside coating photoresist of soi wafer A, exposes it according to specific pattern afterwards, and develops with developer solution.The pattern be exposed like this will display.Recycling reactive ion dry etching or the silicon dioxide layer 7 of buffered hydrofluoric acid to soi wafer A front and back etch multiple hole being deep to upper silicon layer 4;
3rd step, utilizes chemical gaseous sedimentation deposit one deck silicon nitride layer 8 at the front and back of soi wafer A;
4th step, to the front and back coating photoresist of soi wafer A, exposes it according to specific pattern afterwards, and develops with developer solution.The pattern be exposed like this will display.Recycling reactive ion dry etching or buffered hydrofluoric acid etch multiple hole being deep to upper silicon layer 4 and lower silicon layer 5 respectively to the silicon nitride layer 8 of soi wafer A front and back and silicon dioxide layer 7;
5th step, recycling deep reaction ion etching or potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol will be exposed to outer upper silicon layer 4 and lower silicon layer 5 carries out deep etching to buried oxide 6, form upper pedestal 11, coupling frame 12, mass 13, fixed block 14;
6th step, utilizes buffered hydrofluoric acid to remove being exposed to outer buried oxide 6;
7th step, utilizes deep reaction ion etching or potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol to etch further soi wafer A front, until be etched to the certain depth in lower silicon layer 5, forms brace summer 15;
8th step, carries out high temperature oxidation process to the positive and negative surface of soi wafer B, and its positive and negative surface forms layer of silicon dioxide layer 7 respectively; Or utilize chemical gaseous sedimentation (CVD) deposit layer of silicon dioxide layer 7 on positive and negative surface;
9th step, to the front surface coated photoresist of soi wafer B, exposes it according to specific pattern afterwards, and develops with developer solution.The pattern be exposed like this will display.Recycling reactive ion dry etching or the silicon dioxide layer 7 of buffered hydrofluoric acid to soi wafer B front etch multiple hole being deep to upper silicon layer 4;
Tenth step, utilizes chemical gaseous sedimentation deposit one deck silicon nitride layer 8 at the front and back of soi wafer B;
11 step, to the backside coating photoresist of soi wafer B, exposes it according to specific pattern afterwards, and develops with developer solution.The pattern be exposed like this will display.Recycling reactive ion dry etching or buffered hydrofluoric acid etch multiple hole being deep to lower silicon layer 5 respectively to the silicon nitride layer 8 at the soi wafer B back side and silicon dioxide layer 7;
12 step, recycling deep reaction ion etching or potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol are etched to buried oxide 6 by being exposed to outer lower silicon layer 5, form lower half of pedestal 11, coupling frame 12, mass 13, fixed block 14;
13 step, utilizes reactive ion dry etching or buffered hydrofluoric acid to remove being exposed to outer buried oxide 6 in lower silicon layer 5;
14 step, removes the silicon dioxide layer 7 at soi wafer A and the soi wafer B back side and silicon nitride layer 8;
15 step, carries out back-to-back silicon-silicon bond conjunction by soi wafer A and soi wafer B, forms complete pedestal 11, coupling frame 12, mass 13, fixed block 14;
16 step, utilizes reactive ion dry etching to be removed by the silicon nitride layer of the front side of silicon wafer after bonding;
17 step, recycling deep reaction ion etching to key and after silicon chip front on be exposed to outer part silicon layer carry out deep etching, wear until the silicon layer being exposed to outer part is carved, form the space between freely movable elastic beam 16, resonance beam 18, first pectination coupled structure 17, second pectination coupled structure 19 and mass 13 and fixed block 14 and pedestal 11;
18 step, utilizes reactive ion dry etching or buffered hydrofluoric acid to be removed by the silicon dioxide layer 7 of front side of silicon wafer after bonding;
19 step, carries out bonding by front side of silicon wafer after bonding and upper cover plate;
20 step, utilizes reactive ion dry etching to be removed by the silicon nitride layer of the silicon chip back side after bonding;
21 step, recycling deep reaction ion etching to key and after silicon chip the back side on be exposed to outer part silicon layer carry out deep etching, wear until the silicon layer being exposed to outer part is carved, form the space between freely movable elastic beam 16, resonance beam 18, first pectination coupled structure 17, second pectination coupled structure 19 and mass 13 and fixed block 14 and pedestal 11, thus release coupling frame 12 and mass 13, form freely movable brace summer 15;
22 step, utilizes reactive ion dry etching or buffered hydrofluoric acid to be removed by the silicon dioxide layer 7 of silicon chip back side after bonding;
23 step, carries out bonding by silicon chip back side after bonding and lower cover, forms complete gyroscope;
The processing technology of described upper cover plate 2 and lower cover 3 is also comprised:
A, on the bonding face of upper cover plate 2 and lower cover 3, apply photoresist, according to specific pattern, it is exposed afterwards, and develop with developer solution.The pattern be exposed like this will display.Recycling deep reaction ion etching or potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol, be etched to certain position by the partial depth that upper cover plate 2 and lower cover 3 are exposed respectively.Thus on the bonding face of upper cover plate 2 and lower cover 3 each self-forming depressed area, and photoresist to be removed.
B, on upper cover plate 2 and lower cover 3 assigned address depositing metal, and etch electrode;
C, with described soi wafer bonding before, to upper cover plate silicon chip 2 and lower cover silicon chip 3 to cleaning;
Wherein, the silicon nitride layer 9 in the above-mentioned processing technology in the present invention and silicon dioxide layer 8 play its silicon layer covered of protection, make it not be etched or corrode.
The method of the deep etching described in the present invention and described etching is one or more methods in following methods: dry etching or wet etching, and described dry etching comprises: the deep reaction ion etching of silicon and reactive ion etching.
See Fig. 1 to Fig. 6, material used in said method in the present invention, equipment, technique all adopt prior art, but by utilizing the gyroscope manufactured by these material and progress, have the following advantages: this gyrostatic testing result is a frequency signal, can dock with other signal processors very easily, eliminate the step of the signal transacting such as analog to digital conversion.In addition, the structure arranging down two groups of resonance beam 18 in vertical direction carrys out output frequency change with the form of difference, such output signal is more accurate, because the method for making of two groups of resonance beam 18 is identical, material is also identical and position is also substantially identical, so when being subject to temperature and affecting, the common-mode error of two groups of resonance beam 18 generations is also basically identical, can eliminate the impact of temperature on gyroscope accuracy of detection by difference output.The mass that the present invention is obtained by bonding pattern is also comparatively large, in testing process driving direction and detection side to all there being larger resonance shifts, detection sensitivity is also improved.And this gyroscope is upwards also provided with a feedback circuit detection side, after the signal detected by the second pectination coupled structure 19 in resonance beam when integrated circuit calculates the displacement of mass 13, feedback control system can apply feedback voltage on mass, thus mass 13 is maintained equilibrium position.This feedback control system effectively can strengthen the stability of system, reduces the non-linear of system, widens system bandwidth, Reaction time shorten, thus makes detection more accurate.
Claims (18)
1. a MEMS high precision resonance beam closed-loop control gyroscope, comprising: measure body, upper cover plate and lower cover, it is characterized in that, described measurement body comprises pedestal, coupling frame, the mass be connected with coupling frame and the fixed block being positioned at described mass center; Described pedestal and described fixed block and described upper cover plate and described lower cover are fixedly connected; Described mass is connected by multiple elastic beam with described coupling frame; The first pectination coupled structure is provided with between described mass and described fixed block; The side of described coupling frame is provided with brace summer; Described coupling frame is connected with described pedestal by described brace summer; Top and the bottom of the sidewall of described coupling frame are respectively arranged with resonance beam, and described resonance beam one end is connected with described coupling frame, and the other end is connected with pedestal respectively; The second pectination coupled structure is also provided with between described resonance beam and described pedestal; Described resonance beam and described second pectination coupled structure are for detecting rotational angular velocity.
2. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, it is characterized in that, described brace summer and described resonance beam are elastic beam.
3. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, is characterized in that, the square body of hollow out centered by described mass.
4. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, it is characterized in that, described elastic beam is U-shaped elastic beam.
5. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 3, is characterized in that, described elastic beam is arranged on four end angle places of described mass.
6. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, it is characterized in that, described first pectination coupled structure is arranged in the clearance space between described mass and described fixed block.
7. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, is characterized in that, described mass, described upper cover plate, described lower cover, described first pectination coupled structure and described second coupled structure are provided with electrode.
8. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, it is characterized in that, described resonance beam and described brace summer are arranged on the same side of the described frame that is coupled.
9. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, it is characterized in that, described pedestal is provided with groove, and described resonance beam is positioned at described groove.
10. MEMS high precision resonance beam closed-loop control gyroscope as claimed in claim 1, it is characterized in that, described resonance beam is upper and lower two groups, often organizes described resonance beam and comprises two resonance beam, is provided with two to described second pectination coupled structure described in every root between resonance beam and described pedestal; Described in a pair, the second pectination coupled structure is for driving described resonance beam, and another is to for detecting angular velocity of rotation.
11. MEMS high precision resonance beam closed-loop control gyroscopes as claimed in claim 10, it is characterized in that, described second pectination coupled structure comprises two comb matched, and one of them comb is connected with described resonance beam, and comb described in another is connected with described pedestal.
12. MEMS high precision resonance beam closed-loop control gyroscopes as claimed in claim 1, is characterized in that, described measurement body adopts the silicon bi-layer structure including upper silicon layer and lower silicon layer, is respectively arranged with buried oxide between every layer of silicon layer.
13. MEMS high precision resonance beam closed-loop control gyroscopes as claimed in claim 12, it is characterized in that, described resonance beam and described elastic beam take shape in described upper silicon layer.
14. 1 kinds of gyrostatic manufacturing process, is characterized in that, described manufacturing process comprises the following steps:
The first step, by high-temperature oxydation or deposition process, first piece of silicon on insulator front side of silicon wafer and the back side forms layer of silicon dioxide layer respectively;
Second step, by photoetching and etching, the silicon dioxide layer of first piece of silicon on insulator front side of silicon wafer will etch multiple hole being deep to upper silicon layer;
3rd step, deposit one deck silicon nitride layer on first piece of silicon on insulator front side of silicon wafer and the back side;
4th step, by photoetching and etching, removes the silicon nitride layer on the position in first piece of silicon on insulator front side of silicon wafer corresponding to brace summer and silicon dioxide layer respectively, and described upper silicon layer is etched to described buried oxide; Silicon nitride layer on position corresponding to first piece of silicon on insulator silicon chip back side Elastic beam, resonance beam and the gap between fixed block and mass and silicon dioxide layer are removed simultaneously, and described lower silicon layer is etched to described buried oxide, form half of pedestal, coupling frame, mass and fixed block;
5th step, by etching, removes described buried oxide, forms one deck elastic beam and resonance beam;
6th step, is etched to certain depth further to the position in first piece of silicon on insulator front side of silicon wafer corresponding to brace summer, forms brace summer;
7th step, by high-temperature oxydation or deposition process, second piece of silicon on insulator front side of silicon wafer and the back side forms layer of silicon dioxide layer respectively;
8th step, by photoetching and etching, the silicon dioxide layer of second piece of silicon on insulator front side of silicon wafer will etch multiple hole being deep to upper silicon layer;
9th step, at second piece of silicon on insulator front side of silicon wafer and back side deposit one deck silicon nitride;
Tenth step, by photoetching and etching, silicon nitride layer on position in second piece of silicon on insulator silicon chip back side corresponding to brace summer, elastic beam, resonance beam and the gap between fixed block and mass and silicon dioxide layer are removed, and described lower silicon layer is etched to described buried oxide, form half of pedestal, coupling frame, mass and fixed block;
11 step, by etching, removes described buried oxide, forms one deck elastic beam and resonance beam;
12 step, removes the silicon nitride layer of first piece and second piece silicon on insulator silicon chip back side and silicon dioxide layer respectively;
13 step, carries out back-to-back silicon-silicon bond conjunction by first piece and second piece of silicon on insulator silicon chip, forms complete pedestal, fixed block, mass and coupling frame;
14 step, removes the silicon nitride layer of key and rear front side of silicon wafer;
15 step, carrying out deep etching to key and rear front side of silicon wafer being exposed to outer upper silicon layer, forming through hole, thus forming freely movable upper strata elastic beam, upper strata resonance beam, upper strata first pectination coupled structure and upper strata second pectination coupled structure;
16 step, removes the silicon dioxide layer of key and rear front side of silicon wafer;
17 step, carries out bonding by key and rear front side of silicon wafer and upper cover plate;
18 step, removes the silicon nitride layer of key and rear silicon chip back side;
19 step, carrying out deep etching to key and rear silicon chip back side being exposed to outer upper silicon layer, forming through hole, thus forming freely movable brace summer, lower floor's elastic beam, lower floor's resonance beam, lower floor first pectination coupled structure and lower floor second pectination coupled structure;
20 step, removes the silicon dioxide layer of key and rear silicon chip back side;
21 step, carries out bonding by key and rear silicon chip back side and lower cover; Form complete gyroscope.
15. gyrostatic manufacturing process as claimed in claim 14, is characterized in that, also comprise the processing technology of described upper cover plate silicon chip and lower cover silicon chip:
A, on the bonding face of described upper cover plate and described lower cover respectively by photoetching, deep etching and etch each self-forming depressed area;
B, on described upper cover plate and described lower cover depositing metal, and etch electrode;
C, with described silicon on insulator wafer bonding before, described upper cover plate silicon chip and described lower cover silicon chip are cleaned.
16. gyrostatic manufacturing process according to claims 14 or 15, it is characterized in that, the method of described deep etching and described etching is one or more methods in following methods: dry etching or wet etching, and described dry etching comprises: the deep reaction ion etching of silicon and reactive ion etching.
17. gyrostatic manufacturing process according to claims 14 or 15, it is characterized in that, the described mordant for etching silicon layer is one or more the combination in following mordant: the xenon difluoride of potassium hydroxide, tetramethyl aqua ammonia, ethylenediamine phosphorus benzenediol or gaseous state.
18. gyrostatic manufacturing process according to claims 14 or 15, it is characterized in that, the described mordant for corrode silicon dioxide layer is one or more the combination in following mordant: the hydrogen fluoride of buffered hydrofluoric acid, 49% hydrofluorite or gaseous state.
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