CN102778583B - Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure - Google Patents

Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure Download PDF

Info

Publication number
CN102778583B
CN102778583B CN201210240759.8A CN201210240759A CN102778583B CN 102778583 B CN102778583 B CN 102778583B CN 201210240759 A CN201210240759 A CN 201210240759A CN 102778583 B CN102778583 B CN 102778583B
Authority
CN
China
Prior art keywords
acceleration
silica
silicon substrate
mass
sensor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210240759.8A
Other languages
Chinese (zh)
Other versions
CN102778583A (en
Inventor
赵玉龙
李村
饶浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shaanxi Lin Tak Inertia Electric Co ltd
Original Assignee
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN201210240759.8A priority Critical patent/CN102778583B/en
Publication of CN102778583A publication Critical patent/CN102778583A/en
Application granted granted Critical
Publication of CN102778583B publication Critical patent/CN102778583B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses a silicon substrate-based quartz resonance acceleration sensor chip with a four-beam structure. The quartz resonance acceleration sensor chip comprises a periphery silicon substrate support, wherein the periphery silicon substrate support is bonded with a glass substrate; a double-end quartz tuning fork is fixed on a boss of the silicon substrate support through organic gel; and the other end is fixed on a boss of a mass block; the mass block is provided with four cantilever beams supported on the silicon substrate; a layer of metal electrode is arranged at the part (corresponding to the mass block) on the glass substrate; the metal electrode is used for preventing the electrostatic adherence between an acceleration mass block and the glass substrate during the electrostatic bonding; the sensor chip senses the input of the acceleration through the mass block, the double-end quartz tuning fork is thereby transformed, a resonance frequency of the quartz tuning fork is output through a frequency detecting circuit, and an acceleration signal is converted into an electric signal so as to accomplish the digital induction and measurement to the acceleration. The sensor chip has the advantages of good frequency output, small size, high sensitivity, high quality factor and the like.

Description

A kind of silica-based four girder construction quartz resonance acceleration transducer chips
Technical field
The invention belongs to micromechanics electronic technology field, be specifically related to a kind of silica-based four girder construction quartz resonance acceleration transducer chips.
Background technology
At present, high precision, high-resolution digitizing acceleration measurement method have obtained developing more and more widely, in the aspect such as high-precision high-speed figure navigational system, gravimetry, cruise missile, autonomous underwater navigation have wide practical use.What this type of accelerometer was exported is frequency signal, and the loss of significance that does not have digital-to-analog conversion to bring, can combine with high accuracy number measuring system.The sensor of at present conventional employing MEMS (micro electro mechanical system) processing is mainly divided into pressure resistance type and condenser type.Piezoresistive transducer carrys out induction acceleration by the resistance with piezoresistive effect with the beam-mass with a fixed structure, and capacitance acceleration transducer is that area or the distance by changing capacitor plate carried out induction acceleration.What above two kinds of conventional acceleration transducers were exported is all simulating signals, post processing circuitry complexity, and sensitivity is low, has analog to digital conversion error, and can not directly combine with high-precision digital display circuit.At present also have a small amount of resonant silicon micro-acceleration sensor, although sensors with auxiliary electrode were output is digital signal, have the problems such as resonance frequency is low, poor sensitivity, while complex structure, difficulty of processing are large, and cost is high.The problems such as in a word, existing accelerometer ubiquity simulation is exported, and sensitivity is low, processed complex.
Summary of the invention
In order to overcome the shortcoming of above-mentioned existing accelerometer, the object of the present invention is to provide a kind of silica-based four girder construction quartz resonance acceleration transducer chips, there is volume little, weight is little, digital signal output and the high advantage of resolution.
To achieve these goals, the technical solution used in the present invention is:
A kind of silica-based four girder construction quartz resonance acceleration transducer chips, comprise peripheral silica-based support 5, silica-based support 5 is connected by bonding with the glass substrate 7 of its bottom, on the A silicon boss 2 of silica-based support 5, be fixed with both-end quartz tuning-fork 1 by organic gel, the other end of both-end quartz tuning-fork 1 is fixed on the B silicon boss 4 of mass 6, and mass 6 has four semi-girders 3 to be supported in silica-based support 5.
Described B silicon boss 4 is at the center position of mass 6.
Between described mass 6 and glass substrate 7, there is the movement clearance of 5 microns.
Described glass substrate 7 part relative with mass 6 is provided with layer of metal electrode 8.
The plane of described A silicon boss 2 and the silica-based support 5 of aspect ratio of B silicon boss 4 exceeds more than 60 microns.
The resonance beam surface surrounding of described both-end quartz tuning-fork 1 is provided with electrode.
Described semi-girder 3 and the axis of mass 6 overlap.
The direction of vibration of two resonance beam 9 of both-end quartz tuning-fork 1 is contrary.
There is inverse piezoelectric effect in both-end quartz tuning-fork 1 of the present invention, in the time that electrode two sides has electric charge alternately to change, both-end quartz tuning-fork 1 just there will be vibration, and its vibration frequency is subject to the impact of both-end quartz tuning-fork planform.In the time that acceleration acts on chip, the mass 6 that semi-girder 3 supports moves small displacement under inertial force effect.Because both-end quartz tuning-fork 1 one end is fixed, one end is connected with mass, so both-end quartz tuning-fork 1 occurs bending and deformation, this flexural deformation causes its resonance frequency to change, the size changing is directly proportional to acceleration, thereby just can obtain the size of acceleration by detecting the resonance frequency of both-end quartz tuning-fork 1.A silicon boss 2 and B silicon boss 4 can prevent the interference that 5 pairs of both-end quartz tuning-forks 1 of silica-based support vibrate; Therefore the present invention adopts both-end quartz tuning-fork as sensitive material, and substrate support is silicon, so have frequency output, volume is little, the high and quality factor advantages of higher of susceptibility.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is schematic cross-section of the present invention.
Fig. 3 is the required mode of oscillation of both-end quartz tuning-fork.
Embodiment
Below in conjunction with accompanying drawing, structure of the present invention and principle of work are described in detail.
Referring to Fig. 1, a kind of silica-based four girder construction quartz resonance acceleration transducer chips, comprise peripheral silica-based support 5, and glass substrate 7 is arranged at bottom, and peripheral silica-based support 5 is connected by bonding with glass substrate 7.On the A silicon boss 2 of silica-based support 5, be fixed with both-end quartz tuning-fork 1 by organic gel, the other end of both-end quartz tuning-fork 1 is fixed on the B silicon boss 4 of mass 6, and mass 6 has four semi-girders 3 to be supported on silica-based 5.Sensor chip senses the input of acceleration by mass 6, then have frequency detection circuit that acceleration is converted to electric signal by the frequency change of both-end quartz tuning-fork 1, completes induction and measurement to acceleration.Described siliceous gauge block 6, semi-girder 3, boss 2 and boss 4 are processed and are obtained by bulk silicon technological.
Referring to Fig. 2, the plane of the fixing A silicon boss 2 of both-end quartz tuning-fork 1 and the silica-based support 5 of aspect ratio of B silicon boss 4 exceeds more than 60 microns, can prevent like this obstruction of silicon face to both-end quartz tuning-fork 1 resonance, make the vibration frequency of both-end quartz tuning-fork 1 more objectively react the size of acceleration.
Between mass 6 and glass substrate 7, there is the movement clearance of 5 microns, in the time having acceleration to act on chip, according to Newton second law, mass 6 will produce certain displacement under the effect of inertial force, thereby makes both-end quartz tuning-fork 1 produce the change that flexural deformation causes its frequency.
Described glass substrate 7 part relative with siliceous gauge block 6 is provided with layer of metal electrode 8, prevents the Electrostatic Absorption between electrostatic bonding brief acceleration mass 6 and glass substrate 7.
Described semi-girder 3 and the axis of mass 6 overlap.
The resonance beam surface surrounding of described both-end quartz tuning-fork 1 is provided with electrode, after energising, can vibrate according to predetermined modality.
Referring to Fig. 3, the vibration mode of two resonance beam 9 of both-end quartz tuning-fork 1 is contrary, thereby internal force can be cancelled out each other at stiff end, thereby can not produce additional effect to mass 6.
Principle of work of the present invention is: when acceleration acts on sensor chip, mass 6 is as the sensitive-mass piece of sensor acceleration.According to Newton second law, in the time that acceleration acts on central siliceous gauge block 6, due to the effect of inertial force, the siliceous gauge block 6 of central authorities can produce certain displacement, and then make both-end quartz tuning-fork 1 that deformation occur, and this deformation causes the resonance frequency of quartzy beam to change, and this variation is converted into frequency signal output by frequency detection circuit, thereby realize acceleration-frequency signal conversion of sensor chip, complete the digitized measurement to acceleration.

Claims (3)

1. silica-based four girder construction quartz resonance acceleration transducer chips, it is characterized in that, comprise peripheral silica-based support (5), silica-based support (5) is connected by bonding with the glass substrate (7) of its bottom, the A silicon boss (2) of silica-based support (5) is above fixed with both-end quartz tuning-fork (1) by organic gel, the other end of both-end quartz tuning-fork (1) is fixed on the B silicon boss (4) of mass (6), and mass (6) has four semi-girders (3) to be supported in silica-based support (5);
Described B silicon boss (4) is at the center position of mass (6);
Between described mass (6) and glass substrate (7), there is the movement clearance of 5 microns;
Described glass substrate (7) part relative with mass (6) is provided with layer of metal electrode (8);
The plane of described A silicon boss (2) and the silica-based support of aspect ratio (5) of B silicon boss (4) exceeds more than 60 microns.
2. a kind of silica-based four girder construction quartz resonance acceleration transducer chips according to claim 1, is characterized in that, the resonance beam surface surrounding of described both-end quartz tuning-fork (1) is provided with electrode.
3. a kind of silica-based four girder construction quartz resonance acceleration transducer chips according to claim 1, is characterized in that, the direction of vibration of (1) two resonance beam of both-end quartz tuning-fork (9) is contrary.
CN201210240759.8A 2012-07-12 2012-07-12 Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure Active CN102778583B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210240759.8A CN102778583B (en) 2012-07-12 2012-07-12 Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210240759.8A CN102778583B (en) 2012-07-12 2012-07-12 Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure

Publications (2)

Publication Number Publication Date
CN102778583A CN102778583A (en) 2012-11-14
CN102778583B true CN102778583B (en) 2014-07-23

Family

ID=47123555

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210240759.8A Active CN102778583B (en) 2012-07-12 2012-07-12 Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure

Country Status (1)

Country Link
CN (1) CN102778583B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103063875A (en) * 2012-12-25 2013-04-24 西安交通大学 Silicon substrate differential motion quartz acceleration sensor
CN105865666B (en) * 2016-05-03 2018-11-20 成都皆为科技有限公司 A kind of integral type biquartz tuning fork resonant sensitive element and force-measuring module
CN106443068B (en) * 2016-10-26 2020-06-02 西安交通大学 Torsional differential quartz resonance acceleration sensor chip
CN108398575B (en) * 2018-03-19 2024-02-27 重庆科技学院 Electrostatic resonance accelerometer and acceleration measurement method
CN109100535B (en) * 2018-06-22 2020-04-10 西安交通大学 Flexible lever amplification vibration beam accelerometer chip based on SOQ and processing technology thereof
CN108732382A (en) * 2018-06-22 2018-11-02 西安交通大学 With flexible amplification mechanism based on SOQ quartz vibration beam accelerometer chips
CN109765404B (en) * 2018-12-28 2020-03-17 西安交通大学 Accelerometer chip based on QoS technology, processing technology and accelerometer
CN109764954B (en) * 2019-01-04 2021-02-09 西安交通大学 High-sensitivity, high-frequency-response and overload-resistant silicon carbide high-temperature vibration sensor
CN111650401B (en) * 2020-06-03 2021-05-07 西安交通大学 Coplanar-mounted metal-based integrated resonant accelerometer
CN111796119B (en) * 2020-07-20 2022-05-17 合肥工业大学 Resonant acceleration sensor based on nano piezoelectric beam and preparation method thereof
CN112484900B (en) * 2020-12-12 2021-12-28 西安交通大学 Quartz resonant pressure sensor with integrated push-pull structure
CN114280329A (en) * 2021-12-27 2022-04-05 西安交通大学 Quartz acceleration sensor with tuning fork fixedly supported at two ends
CN116046220A (en) * 2022-12-28 2023-05-02 厦门大学 Quartz resonance type pressure sensor based on single pressure conversion element
CN116387094B (en) * 2023-06-02 2023-08-25 中国工程物理研究院电子工程研究所 Integrated quartz micro-switch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102243077A (en) * 2010-04-21 2011-11-16 精工爱普生株式会社 Vibration-type force detection sensor and vibration-type force detection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7467553B2 (en) * 2005-12-22 2008-12-23 Honeywell International Inc. Capacitively coupled resonator drive
JP2008046009A (en) * 2006-08-17 2008-02-28 Epson Toyocom Corp Acceleration sensor element
JP2010181210A (en) * 2009-02-03 2010-08-19 Epson Toyocom Corp Acceleration sensor
JP2011059097A (en) * 2009-08-10 2011-03-24 Seiko Epson Corp Tuning fork vibrating reed, vibration sensor element, and vibration sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102243077A (en) * 2010-04-21 2011-11-16 精工爱普生株式会社 Vibration-type force detection sensor and vibration-type force detection device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2008-46009A 2008.02.28
JP特开2010-181210A 2010.08.19
JP特开2011-59097A 2011.03.24

Also Published As

Publication number Publication date
CN102778583A (en) 2012-11-14

Similar Documents

Publication Publication Date Title
CN102778583B (en) Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure
Bao Micro mechanical transducers: pressure sensors, accelerometers and gyroscopes
Yu et al. System modeling of microaccelerometer using piezoelectric thin films
CN104820113B (en) A kind of quartzy twin beams power frequency resonator of integrated temperature sensitive unit
US20090322183A1 (en) Inertial sensor and inertial detecting device
CN101666646B (en) Inclined double-end tuning-fork type silica micromechanical gyroscope and making method thereof
CN102590555A (en) Resonance-force balance capacitance type three-axis acceleration transducer and manufacture method
CN103900546A (en) Micro-electromechanical six-axis inertial sensor
CN102495236A (en) High-sensitivity dual-axis silicon-micro resonance accelerometer
CN102288172B (en) Capacitor type micro-machined gyroscope for amplifying movement speed of mass block
CN101216498A (en) Dual spindle differential capacitance type micromechanical accelerameter
CN106771358A (en) A kind of full quartz resonance accelerometer of miniature differential formula
CN103941041A (en) Single-mass-block three-axis MEMS accelerometer with three frame structures
CN111623762A (en) Annular array type four-mass coupling six-axis micro-inertial sensor and processing method thereof
CN101504425A (en) Piezoelectric six-dimension acceleration sensor based on 9-SPS parallel mechanism
CN104819710A (en) Resonant mode silicon micro-machined gyroscope with temperature compensation structure
CN101261126A (en) Micro- solid mode gyroscope
Liu et al. Realization of a composite MEMS hydrophone without left-right ambiguity
CN101759136B (en) Fully-decoupled vibrating micromechanical gyroscope
CN101493473A (en) Piezoelectric six-dimension acceleration sensor based on 6-SS parallel mechanism
CN102155944B (en) Six-axis microtype inertial sensor integrating accelerometer and gyroscope and application method thereof
CN103439529A (en) Silicon-vibrating-beam accelerometer based on chip-type integrated high-precision temperature measurement structure
CN106443068B (en) Torsional differential quartz resonance acceleration sensor chip
CN106441261B (en) A kind of micro-mechanical gyroscope
CN115855011B (en) Chip-level high-dynamic MEMS annular acoustic surface standing wave gyro

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
CB03 Change of inventor or designer information

Inventor after: Zhao Jianhua

Inventor before: Zhao Yulong

Inventor before: Li Cun

Inventor before: Rao Hao

COR Change of bibliographic data
TR01 Transfer of patent right

Effective date of registration: 20161123

Address after: 710075 Xi'an hi tech Zone, new industrial park, No. foreign exchange Road, No. 19

Patentee after: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Address before: 710048 Xianning Road, Shaanxi, Xi'an, No. 28

Patentee before: Xi'an Jiaotong University

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure

Effective date of registration: 20171114

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: 2017610000147

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20181212

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: 2017610000147

PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure

Effective date of registration: 20181214

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: 2018610000225

PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20191127

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: 2018610000225

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure

Effective date of registration: 20191128

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: Y2019610000050

PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20210106

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: Y2019610000050

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A silicon based four beam quartz resonant accelerometer chip

Effective date of registration: 20210111

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: Y2021610000010

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20220419

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: Y2021610000010

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A silicon-based quartz resonant acceleration sensor chip with four beam structure

Effective date of registration: 20220420

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: Y2022610000164

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Granted publication date: 20140723

Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd.

Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd.

Registration number: Y2022610000164