CN103941041A - Single-mass-block three-axis MEMS accelerometer with three frame structures - Google Patents
Single-mass-block three-axis MEMS accelerometer with three frame structures Download PDFInfo
- Publication number
- CN103941041A CN103941041A CN201410124054.9A CN201410124054A CN103941041A CN 103941041 A CN103941041 A CN 103941041A CN 201410124054 A CN201410124054 A CN 201410124054A CN 103941041 A CN103941041 A CN 103941041A
- Authority
- CN
- China
- Prior art keywords
- mems accelerometer
- mass
- axis
- size
- sensitive beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
The invention discloses a single-mass-block three-axis MEMS accelerometer with three frame structures. The single-mass-block three-axis MEMS accelerometer with the three frame structures comprises the three frame structures, namely a suspension inner frame, a suspension outer frame and a fixed frame, wherein the fixed frame is in sealed connection with a base through a bonding method, and the three frame structures are arranged symmetrically in a rectangular shape or an annular shape. The single-mass-block three-axis MEMS accelerometer with the three frame structures further comprises elastic sensing beams arranged in the X-axis direction, the Y-axis direction and the Z-axis direction respectively, wherein a varistor on the sensing beam in the X-axis direction is arranged on a bridge arm of a bridge in a series-connection mode, the variation of the varistor on the sensing beam in the X-axis direction can reduce coupling with the Y axis and the Z axis, the variation of a varistor on the sensing beam in the Y-axis direction can reduce coupling with the X axis and the Z axis, and the variation of a varistor on the sensing beam in the Z-axis direction can reduce coupling with the X axis and the Y axis. The single-mass-block three-axis MEMS accelerometer with the three frame structures is ingenious in design, is high in product yield, and resolves the problems that a single-mass-block three-axis MEMS accelerometer in the prior art is too large in inter-axis coupling, low in sensitivity and low measurement accuracy.
Description
Technical field
The present invention relates to the instrument field for acceleration measurement, particularly a kind of single mass three-shaft mems accelerometer of three framed structures.
Background technology
Accelerometer is the instrument for acceleration measurement, has important using value at space flight, navigation, automobile.Along with micro electronmechanical MEMS(Micro-Electro-Mechanical Systems, MEMS (micro electro mechanical system)) rise of industry, accelerometer is gradually to microminiaturized, integrated direction development.The advantages such as mems accelerometer has that volume is little, quality is light, cost is low, low in energy consumption, easy batch production, have been widely used in the fields such as vehicle, test, Aero-Space, daily exercise monitoring, game and some consumer electronics products at present.MEMS acceleration transducer is divided into the types such as piezoresistor type, condenser type, piezoelectric type conventionally.Wherein, piezoresistor type MEMS acceleration transducer because of its have size little, without sluggish, dynamic response characteristic and output property is good, wide frequency range, acceleration measurement wide ranges, direct voltage output signal, batch production cost are low, with the compatible series of advantages such as good of silicon integrated circuit planar technology, be most widely used.
The structure of existing piezoresistor type MEMS acceleration transducer can be divided into single mass three-shaft acceleration transducer structure or the type such as the three-axis structure that assembled by three single-axis acceleration sensors conventionally.Be illustrated in figure 1 the structural representation of traditional single mass multiaxis acceleration sensor chip.The three-axis structure wherein being assembled by three single-axis acceleration sensors exists that mechanical precision is low, volume and the excessive problem of quality.Single mass three-shaft acceleration transducer structure has compact conformation by contrast, and volume is little, lightweight, on unit area substrate slice, can produce the advantages such as more sensing chip unit.But because be to respond to x by a mass, y, tri-axial acceleration change of z, there are some problems of being brought by its structural design in this acceleration transducer.Mainly that the coupling of between centers between multiaxis is large, the problems (as Fig. 1) such as sensitivity and measuring accuracy are low, existing design is for fear of the between centers coupling between multiaxis, the axial rigidity that supports sense beam by change often makes it produce moderate finite deformation to inductive axis to the acceleration change of (as x axle), and to another axially the acceleration change of (as y axle) produce less distortion.But because sense beam is all connected on mass, change in any case its axial rigidity, all can exert an influence to the deformation sensitive degree of sense beam, and then the precision of impact measurement.
Summary of the invention
The invention provides a kind of single mass three-shaft mems accelerometer of three framed structures, solve excessive, the problem such as sensitivity is low, measuring accuracy is low that is coupled between single mass piezoresistor type 3 axis MEMS acceleration sensor axis in prior art, simultaneously simple in structure again, avoid technique too complexity cause product yield low.
Technical scheme of the present invention is achieved in that
A single mass three-shaft mems accelerometer for three framed structures, comprises three framed structures: suspension inner frame, suspension outside framework and fixed frame, described fixed frame is tightly connected with mode and the base formation of bonding.
Further, described three framed structures are arranged symmetrically, and are shaped as rectangle or annular.
This accelerometer also comprises the mass of a suspension, and described mass is square build, rectangular build or cylinder type etc., for the acceleration change of perception X, Y, tri-directions of Z.
This accelerometer also comprises the first sensitive beam, in order to quality of connection piece and suspension inner frame, is furnished with voltage dependent resistor (VDR), the elasticity sense beam that described sensitive beam is directions X on this beam with existing standard voltage dependent resistor (VDR) silicon process technology.
This accelerometer also comprises the second sensitive beam, in order to connect suspension inner frame and suspension outside framework, is furnished with voltage dependent resistor (VDR), the elasticity sense beam that described sensitive beam is Y-direction on this beam with existing standard voltage dependent resistor (VDR) silicon process technology.
This accelerometer also comprises the 3rd sensitive beam, in order to connect suspension outside framework and fixed frame, on this beam, is furnished with voltage dependent resistor (VDR) with existing standard voltage dependent resistor (VDR) silicon process technology, and described sensitive beam is the elasticity sense beam of Z direction.
The two ends of described sensitive beam adopt symmetrical connected mode, be connected with above-mentioned mass or framework, and the different arrangement of end employing can connected, to strengthen the strength of joint of sensitive beam and institute's quality of connection piece or framework, guarantee that sensitive beam can not produce torsional deflection, but the responsive part rigidity in the center that keeps sensitive beam is not too large, in the time that mass moves, can produce enough large distortion.
Further, all brachium pontis at electric bridge with arranged in series of the voltage dependent resistor (VDR) on described X, Y, Z orientation-sensitive beam.
When the voltage dependent resistor (VDR) in directions X sensitive beam is with arranged in series when a brachium pontis at electric bridge, only have like this deformation on directions X on these two resistance, to produce same variation, and small deformation is in the Y direction because of beam under tension on one side, another beam is under pressure, so two one of voltage dependent resistor (VDR)s meetings on it become large, one diminishes, itself and will change very little, like this by the coupling further reducing between itself and Y-axis.
In like manner, the voltage dependent resistor (VDR) in Y-direction sensitive beam changes the coupling that also can reduce between itself and X-axis, Z axis.
In like manner, the voltage dependent resistor (VDR) on Z orientation-sensitive beam changes the coupling that also can reduce between itself and X-axis, Y-axis.
The present invention, by the different designs method of structure and size, makes different sensitive beam in different directions, have different rigidity, thereby avoids the coupling between sensitive beam, specific as follows described in:
In size design, described mass has larger length, width and thickness.
In size design, the responsive Liangqi directions X size on directions X is less than Y-direction size, and the relative X of thickness in Z direction, Y-direction size are larger, are of a size of: Z>Y>X.This design be make described sensitive beam only on directions X distortion large, on Y, Z both direction, be out of shape insensitively, corresponding voltage dependent resistor (VDR) only produces large resistance variations to the distortion of directions X.
In size design, responsive Liangqi Y-direction size in Y-direction is less than directions X size, the relative X of thickness in Z direction, Y-direction size are larger, be of a size of: Z>X>Y, design is that described sensitive beam is only out of shape greatly in the Y direction like this, on X, Z both direction, be out of shape insensitively, corresponding voltage dependent resistor (VDR) only produces large resistance variations to the distortion of Y-direction.
In size design, responsive Liangqi X in Z direction, Y-direction size are larger, be of a size of: X>Z, Y>Z, design is that described sensitive beam is only out of shape greatly in Z direction like this, on X, Y both direction, be out of shape insensitively, corresponding voltage dependent resistor (VDR) only produces large resistance variations to the distortion of Z direction.
Above-mentioned all voltage dependent resistor (VDR)s all adopt standard voltage dependent resistor (VDR) silicon process technology to make, export the variation of sense accelerations by Wheatstone bridge, because all voltage dependent resistor (VDR) technique is identical, so they have identical temperature drift characteristic, arrange because of the symmetry of electric bridge again, such design just can greatly reduce because the measuring error that temperature drift brings.
Further, described test circuit is made up of with reference to voltage dependent resistor (VDR) and the induction voltage dependent resistor (VDR) that is arranged on same brachium pontis multiple, comprises power end, voltage output end and earth terminal.
Described have identical temperature drift characteristic with reference to voltage dependent resistor (VDR), adds that the symmetry of electric bridge is arranged, can greatly reduce because the measuring error that temperature drift brings.
The invention has the beneficial effects as follows, simple in structure, design ingeniously, product yield is high, efficiently solves the problem excessive, that sensitivity is low, measuring accuracy is low that is coupled between single mass piezoresistor type 3 axis MEMS acceleration sensor axis in prior art.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of traditional single mass multiaxis acceleration sensor chip.
Fig. 2 is structural representation of the present invention.
Fig. 3 is that the A-A of Fig. 2 is to cut-open view.
Fig. 4 is that the B-B of Fig. 2 is to cut-open view.
Fig. 5 is the schematic diagram of X axis acceleration test circuit.
Fig. 6 is the schematic diagram of Y-axis acceleration test circuit.
Fig. 7 is the schematic diagram of Z-axis direction acceleration test circuit.
Fig. 8 is the symmetrical connection status schematic diagram at sensitive beam two ends.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Referring to Fig. 2 to Fig. 8, a kind of single mass three-shaft mems accelerometer of three framed structures comprises three framed structures: suspension inner frame 1, suspension outside framework 2 and fixed frame 3, wherein fixed frame 3 is tightly connected with mode and base 8 formation of bonding, as shown in Figure 2.
This accelerometer also comprises the mass 7 of a suspension, and this mass can be square build, and rectangular build, or cylindrical etc. are used for perception x, y, the acceleration change in tri-directions of z.This accelerometer also comprises sensitive beam 4(and comprises sensitive beam 4-1,4-2), in order to quality of connection piece 7 and suspension inner frame 1, on this beam, be furnished with voltage dependent resistor (VDR) R1 and R2 with existing standard voltage dependent resistor (VDR) silicon process technology, this beam is the elasticity sense beam of x direction.This accelerometer also comprises sensitive beam 5(and comprises sensitive beam 5-1,5-2), in order to connect suspension inner frame 1 and suspension outside framework 2, on this beam, be furnished with voltage dependent resistor (VDR) R3 and R4 with existing standard voltage dependent resistor (VDR) silicon process technology, this beam is the elasticity sense beam of y direction.This accelerometer also comprises sensitive beam 6(and comprises sensitive beam 6-1,6-2,6-3,6-4), in order to connect suspension outside framework 2 and fixed frame 3, on this beam, be furnished with voltage dependent resistor (VDR) R5 with existing standard voltage dependent resistor (VDR) silicon process technology, R6, R7 and R8, this beam is the elasticity sense beam of z direction.This accelerometer also comprises with existing standard voltage dependent resistor (VDR) silicon process technology and is arranged in the voltage dependent resistor (VDR) R9 on fixed frame 3, R10, and R11, the voltage dependent resistor (VDR) R1 in they and sensitive beam 4 and the Wheatstone bridge of R2 composition test x directional acceleration, as shown in Figure 3.
This accelerometer also comprises with existing standard voltage dependent resistor (VDR) silicon process technology and is arranged in the voltage dependent resistor (VDR) R12 on fixed frame 3, R13, and R14, the voltage dependent resistor (VDR) R3 in they and sensitive beam 5 and the Wheatstone bridge of R4 composition test y directional acceleration, as shown in Figure 4.
This accelerometer also comprises with existing standard voltage dependent resistor (VDR) silicon process technology and is arranged in the voltage dependent resistor (VDR) R15 on fixed frame 3, R16, R17, voltage dependent resistor (VDR) R5 in they and sensitive beam 6, R6, the Wheatstone bridge of R7 and R8 composition test z directional acceleration, as shown in Figure 5.
This accelerometer also comprises with existing standard piezoresistive silicon processing technology and is arranged in the pressure drag R12 on fixed frame 3, R13, and R14, the pressure drag R3 in they and sensitive beam 5 and the Wheatstone bridge of R4 composition test y directional acceleration, as shown in Figure 6.
This accelerometer also comprises with existing standard piezoresistive silicon processing technology and is arranged in the pressure drag R15 on fixed frame 3, R16, and R17, the pressure drag R5 in they and sensitive beam 6, R6, the Wheatstone bridge of R7 and R8 composition test z directional acceleration, as shown in Figure 7.
Fig. 2 is shown in by the planimetric map of this accelerometer, and sectional view is shown in Fig. 3 and Fig. 4.Wherein mass 7, sensitive beam 4, inner frame 1, sensitive beam 5, outside framework 2, sensitive beam 6 is all suspension structure, fixed frame 3 and base bonding, be fixed parts.
The present invention, by the different designs method of structure and size, makes different sensitive beam in different directions, have different rigidity, thereby avoids the coupling between sensitive beam.Described in specific as follows:
In size design, mass 7 has larger length, width and thickness.
In size design, the feature of sensitive beam 4 is less in x direction size, larger in y direction size, in z direction, relative its length of thickness and width want large, can be smaller compared with mass 7, as shown in Figure 4, after design, 4 of sensitive beam are out of shape greatly in x direction like this, at y, are out of shape insensitive on z both direction, corresponding pressure drag R1, R2 only produces large resistance variations to the distortion of x direction.
In size design, the feature of sensitive beam 5 is larger in x direction size, less in y direction size, in z direction, relative its length of thickness and width want large, can be lower slightly compared with mass 7, as shown in Figure 3, after design, 5 of sensitive beam are out of shape greatly in y direction like this, at x, are out of shape insensitive on z both direction, corresponding pressure drag R3, R4 only produces large resistance variations to the distortion of y direction.
In size design, the feature of sensitive beam 6 is at x, in y direction, size is larger, and in z direction, relative its length of thickness and width are little, as shown in Figures 3 and 4, after design, 6 of sensitive beam are out of shape large in z direction like this, at x, on y both direction, be out of shape insensitive, corresponding pressure drag R5, R6, R7 and R8 only produce large resistance variations to the distortion of z direction.
In size design, sensitive beam two ends are connected with mass or framework, can adopt symmetric mode to connect, as shown in Figure 2, and can adopt different arrangements in connection end, shown in Fig. 8 is a kind of structure, but be not limited to this structure, to strengthen the strength of joint of sensitive beam and institute's quality of connection piece or framework, guarantee that sensitive beam can not produce torsional deflection, but the responsive part rigidity in the center that keeps sensitive beam is not too large, moving at mass is to produce enough large distortion.
The test circuit of this accelerometer has following characteristics: 1) all voltage dependent resistor (VDR)s adopt standard piezoresistive silicon processing technology to make, and export the variation (Fig. 2, Fig. 5, Fig. 6, Fig. 7) of sense accelerations by Wheatstone bridge.2) brachium pontis of the pressure drag of sensitive beam in Wheatstone bridge, is all the reference pressure drag on fixed frame 3 on other brachium pontis, because all pressure drag technique is identical, they have identical temperature drift characteristic.Arrange because of the symmetry of electric bridge again, such design just can greatly reduce because the measuring error that temperature drift brings.3) sensitive beam 4(x axle sensitivity) on pressure drag R1, R2 is a brachium pontis at electric bridge with arranged in series, only has like this deformation in x direction on these two resistance, to produce same variation; And small deformation in y direction is because of beam under tension (as 4-1) on one side, another beam is under pressure (as 4-2), so pressure drag R1, R2 can one becomes large one and diminishes, itself and will change very littlely, will further reduce the coupling of itself and y between centers like this.In like manner, in sensitive beam 5(y axle sensitivity) on pressure drag change the coupling that also can reduce itself and x between centers.In like manner, in sensitive beam 6(z axle sensitivity) on pressure drag change and also can reduce itself and x, the coupling of y between centers.
The micro fabrication of this accelerometer is simple, MEMS structure (Fig. 2 of acceleration, Fig. 6, Fig. 7) completed by photoetching and deep reaction ion etching (DRIE) technique of standard by silicon chip, and each voltage dependent resistor (VDR) is completed by photoetching and the semiconductor doping technique (as diffusion or Implantation) of standard.The submount material of acceleration can be silicon chip, glass sheet etc.; Base etches a cavity structure (Fig. 6, Fig. 7) through photoetching and dry method or wet corrosion technique.Then MEMS silicon structure and base are adopted MEMS standard bonding technology to be bonded together and (if base is silicon chip, adopt silicon-silicon low-temperature bonding technique.If base is glass sheet, can adopt anode linkage technique).Chip after bonding completes can directly be encapsulated in the encapsulating package of standard.
The principle of work of the single mass three-shaft mems accelerometer of this three framed structure is:
Mass 7, sensitive beam 4, inner frame 1, sensitive beam 5, outside framework 2, sensitive beam 6 is all suspension structure.In the time there is the variation of acceleration, mass 7 produces mobile, and drives sensitive beam 4, inner frame 1, and sensitive beam 5, outside framework 2, sensitive beam 6 produces mobile.
The acceleration change of x direction is delivered to the voltage dependent resistor (VDR) R1 in sensitive beam 4 by mass 7, R2 perception.Sensitive beam 5 and sensitive beam 6 are insensitive to the acceleration change of x direction.
The acceleration change of y direction is through mass 7, sensitive beam 4, and inner frame 1 is delivered to the voltage dependent resistor (VDR) R3 in sensitive beam 5, R4 perception.Sensitive beam 4 and sensitive beam 6 are insensitive to the acceleration change of y direction.
The acceleration change of z direction is through mass 7, sensitive beam 4, and inner frame 1, sensitive beam 5, outside framework 2 is delivered to the voltage dependent resistor (VDR) R5 in sensitive beam 6, R6, R7, R8 perception.Sensitive beam 4 and sensitive beam 5 are insensitive to the acceleration change of z direction.
In sum, the present invention has solved by said structure excessive, the problem such as sensitivity is low, measuring accuracy is low that is coupled between single mass piezoresistor type 3 axis MEMS acceleration sensor axis in prior art, simple in structure, designs ingenious, product yield is high, measures more accurate.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (13)
1. a single mass three-shaft mems accelerometer for three framed structures, is characterized in that, comprises three framed structures: suspension inner frame, suspension outside framework and fixed frame, described fixed frame is tightly connected with mode and the base formation of bonding.
2. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, described three framed structures are arranged symmetrically, and are shaped as rectangle or annular.
3. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, this accelerometer also comprises the mass of a suspension, and described mass is square build, rectangular build or cylinder type.
4. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, also comprises the first sensitive beam, and in order to quality of connection piece and suspension inner frame, described the first sensitive beam is the elasticity sense beam on directions X.
5. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, also comprises the second sensitive beam, and in order to connect suspension inner frame and suspension outside framework, described the second sensitive beam is the elasticity sense beam in Y-direction.
6. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, also comprises the 3rd sensitive beam, and in order to connect suspension outside framework and fixed frame, described the 3rd sensitive beam is the elasticity sense beam in Z direction.
7. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, the two ends of described sensitive beam adopt symmetrical connected mode, connects described mass or framework.
8. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, the voltage dependent resistor (VDR) on described X, Y, Z orientation-sensitive beam is a brachium pontis at electric bridge with arranged in series all.
9. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, is characterized in that, all voltage dependent resistor (VDR)s all adopt same standard voltage dependent resistor (VDR) silicon process technology to make.
10. the single mass three-shaft mems accelerometer of a kind of three framed structures according to claim 1, it is characterized in that, described test circuit is made up of with reference to voltage dependent resistor (VDR) and the induction voltage dependent resistor (VDR) that is arranged on same brachium pontis multiple, comprises power end, voltage output end and earth terminal.
The single mass three-shaft mems accelerometer of 11. a kind of three framed structures according to claim 1, it is characterized in that, in size design, responsive Liangqi directions X size on directions X is less than Y-direction size, the relative X of thickness in Z direction, Y-direction size are larger, are of a size of: Z>Y>X.
The single mass three-shaft mems accelerometer of 12. a kind of three framed structures according to claim 1, it is characterized in that, in size design, responsive Liangqi Y-direction size in Y-direction is less than directions X size, the relative X of thickness in Z direction, Y-direction size are larger, are of a size of: Z>X>Y.
The single mass three-shaft mems accelerometer of 13. a kind of three framed structures according to claim 1, it is characterized in that, in size design, the responsive Liangqi X in Z direction, Y-direction size are larger, be of a size of: X>Z, Y>Z.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410124054.9A CN103941041B (en) | 2014-03-28 | 2014-03-28 | A kind of single mass three-shaft mems accelerometer of three-frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410124054.9A CN103941041B (en) | 2014-03-28 | 2014-03-28 | A kind of single mass three-shaft mems accelerometer of three-frame structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103941041A true CN103941041A (en) | 2014-07-23 |
| CN103941041B CN103941041B (en) | 2016-08-17 |
Family
ID=51188791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410124054.9A Expired - Fee Related CN103941041B (en) | 2014-03-28 | 2014-03-28 | A kind of single mass three-shaft mems accelerometer of three-frame structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103941041B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316724A (en) * | 2014-11-15 | 2015-01-28 | 卢润湖 | Four-steady-state crash sensor |
| CN107246910A (en) * | 2017-06-15 | 2017-10-13 | 中北大学 | MEMS three-dimensional co-vibrating type vector hydrophones based on piezoresistive effect |
| CN107817365A (en) * | 2017-11-28 | 2018-03-20 | 吉林大学 | A kind of self-powered 3-axis acceleration sensor and detection method |
| CN112014595A (en) * | 2019-05-30 | 2020-12-01 | 合肥杰发科技有限公司 | Accelerometer and manufacturing method thereof |
| CN112014596A (en) * | 2019-05-30 | 2020-12-01 | 合肥杰发科技有限公司 | Accelerometer and manufacturing method thereof |
| CN112285384A (en) * | 2020-09-17 | 2021-01-29 | 南京高华科技股份有限公司 | Acceleration sensor based on mechanical metamaterial structure |
| CN112798821A (en) * | 2020-12-28 | 2021-05-14 | 武汉大学 | Double-shaft piezoelectric accelerometer |
| CN112955752A (en) * | 2018-09-13 | 2021-06-11 | 离子地球物理学公司 | Multi-axis single mass accelerometer |
| CN114217094A (en) * | 2021-12-14 | 2022-03-22 | 安徽大学 | Novel MEMS high-g-value triaxial accelerometer |
| GB2600803A (en) * | 2020-11-04 | 2022-05-11 | Honeywell Int Inc | Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor |
| US11733263B2 (en) | 2018-09-21 | 2023-08-22 | Analog Devices, Inc. | 3-axis accelerometer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005134155A (en) * | 2003-10-28 | 2005-05-26 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
| CN101057148A (en) * | 2004-11-08 | 2007-10-17 | 日立金属株式会社 | Acceleration sensor |
| JP2010043929A (en) * | 2008-08-12 | 2010-02-25 | Yamaha Corp | Motion sensor |
| CN103604950A (en) * | 2013-11-20 | 2014-02-26 | 中国工程物理研究院电子工程研究所 | Piezoelectric type micro acceleration sensor |
-
2014
- 2014-03-28 CN CN201410124054.9A patent/CN103941041B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005134155A (en) * | 2003-10-28 | 2005-05-26 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
| CN101057148A (en) * | 2004-11-08 | 2007-10-17 | 日立金属株式会社 | Acceleration sensor |
| JP2010043929A (en) * | 2008-08-12 | 2010-02-25 | Yamaha Corp | Motion sensor |
| CN103604950A (en) * | 2013-11-20 | 2014-02-26 | 中国工程物理研究院电子工程研究所 | Piezoelectric type micro acceleration sensor |
Non-Patent Citations (1)
| Title |
|---|
| CHIH-MING SUN等: "Implementation of a Monolithic Single Proof-Mass Tri-Axis Accelerometer Using CMOS-MEMS Technique", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》, vol. 57, no. 7, 31 July 2010 (2010-07-31), XP011309623 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316724A (en) * | 2014-11-15 | 2015-01-28 | 卢润湖 | Four-steady-state crash sensor |
| CN107246910A (en) * | 2017-06-15 | 2017-10-13 | 中北大学 | MEMS three-dimensional co-vibrating type vector hydrophones based on piezoresistive effect |
| CN107817365A (en) * | 2017-11-28 | 2018-03-20 | 吉林大学 | A kind of self-powered 3-axis acceleration sensor and detection method |
| CN112955752A (en) * | 2018-09-13 | 2021-06-11 | 离子地球物理学公司 | Multi-axis single mass accelerometer |
| US11733263B2 (en) | 2018-09-21 | 2023-08-22 | Analog Devices, Inc. | 3-axis accelerometer |
| CN112014595A (en) * | 2019-05-30 | 2020-12-01 | 合肥杰发科技有限公司 | Accelerometer and manufacturing method thereof |
| CN112014596A (en) * | 2019-05-30 | 2020-12-01 | 合肥杰发科技有限公司 | Accelerometer and manufacturing method thereof |
| CN112285384A (en) * | 2020-09-17 | 2021-01-29 | 南京高华科技股份有限公司 | Acceleration sensor based on mechanical metamaterial structure |
| GB2600803A (en) * | 2020-11-04 | 2022-05-11 | Honeywell Int Inc | Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor |
| US11650110B2 (en) | 2020-11-04 | 2023-05-16 | Honeywell International Inc. | Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor |
| CN112798821A (en) * | 2020-12-28 | 2021-05-14 | 武汉大学 | Double-shaft piezoelectric accelerometer |
| CN112798821B (en) * | 2020-12-28 | 2021-10-08 | 武汉大学 | Double-shaft piezoelectric accelerometer |
| CN114217094A (en) * | 2021-12-14 | 2022-03-22 | 安徽大学 | Novel MEMS high-g-value triaxial accelerometer |
| CN114217094B (en) * | 2021-12-14 | 2023-07-25 | 安徽大学 | MEMS high g value triaxial accelerometer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103941041B (en) | 2016-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103941041B (en) | A kind of single mass three-shaft mems accelerometer of three-frame structure | |
| US10145686B2 (en) | Micro electro mechanical system | |
| CN102768291B (en) | Piezoresistive monolithic integrated four-beam tri-axial accelerometer | |
| CN201083760Y (en) | Three axis integrated piezoresistance type acceleration sensor | |
| CN103235155B (en) | A kind of piezoresistance type acceleration sensor with full-bridge micro girder construction | |
| CN102128953A (en) | Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure | |
| CN102778583A (en) | Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure | |
| CN101216498A (en) | Dual spindle differential capacitance type micromechanical accelerameter | |
| KR20170072327A (en) | Tri-axial micro-electro-mechanical gyroscope | |
| CN110780088B (en) | Multi-bridge tunnel magnetic resistance double-shaft accelerometer | |
| CN105021846A (en) | Six-axis integrated miniature acceleration sensor and manufacturing method therefor | |
| Ravi Sankar et al. | Cross-axis sensitivity reduction of a silicon MEMS piezoresistive accelerometer | |
| CN104457726A (en) | Three-axis micro-electromechanical gyroscope | |
| CN109387191B (en) | High-temperature adaptive MEMS planar resonant gyroscope structure | |
| CN102647657A (en) | Monolithic integrated MEMS (Micro-electromechanical Systems) piezoresistive ultrasonic sensor | |
| CN104950137A (en) | Transverse sensitive acceleration sensor chip having stress isolation structure | |
| CN102901520B (en) | Method for improving temperature stability of capacitor type micromechanical sensor and micromechanical sensor | |
| US10899603B2 (en) | Micromechanical z-inertial sensor | |
| CN211603247U (en) | Three-axis acceleration sensor | |
| CN112964905A (en) | Piezoresistive double-shaft acceleration sensor chip and preparation method thereof | |
| CN113138292B (en) | Capacitance type micromechanical accelerometer | |
| CN1986385A (en) | Phi-shaped resonant micromechanical silicon pressure sensor | |
| CN111766401A (en) | Triaxial piezoresistive accelerometer | |
| CN114839398A (en) | Capacitive flexible acceleration sensor and preparation method thereof | |
| CN104697679B (en) | A kind of inductance type strain gauge |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160817 |