CN107131819B - Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect - Google Patents
Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect Download PDFInfo
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- CN107131819B CN107131819B CN201710438107.8A CN201710438107A CN107131819B CN 107131819 B CN107131819 B CN 107131819B CN 201710438107 A CN201710438107 A CN 201710438107A CN 107131819 B CN107131819 B CN 107131819B
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Abstract
A single-shaft micro-mechanical displacement sensor based on a tunnel magnetoresistance effect comprises a bonding substrate, a displacement sensitive body, a ferromagnetic thin film and a tunnel magneto-resistor, wherein the displacement sensitive body is composed of a displacement sensitive body frame, a sensitive mass block and a folding beam, the displacement sensitive body frame is fixed on the bonding substrate, the sensitive mass block is arranged in the displacement sensitive body frame and is connected with the displacement sensitive body frame through the folding beam, the ferromagnetic thin film is fixed on the upper surface of the sensitive mass block, and the tunnel magneto-resistor corresponding to the ferromagnetic thin film is arranged on the upper surface of the bonding substrate. The single-shaft micro-mechanical displacement sensor adopts the integral structure design, integrates and manufactures the displacement sensor on the same frame body, and can improve the sensitivity of the micro-mechanical displacement sensor by 1 to 2 orders of magnitude.
Description
Technical Field
The invention belongs to the technical field of micro inertial navigation, relates to a sensor for measuring displacement, and particularly relates to a sensor device for measuring displacement by using a tunnel magnetoresistance effect.
Background
Common detection methods of the micro-mechanical displacement sensor include a piezoresistive type, a capacitive type, a piezoelectric type, a tunnel effect type and the like.
The piezoresistive type is realized based on the piezoresistive effect principle of highly doped silicon, a pressure sensitive device formed by the highly doped silicon has stronger dependence on temperature, and a bridge detection circuit formed by the pressure sensitive device can cause sensitivity drift due to temperature change. The improvement of the capacitance accuracy depends on the increase of the capacitance area, but the improvement of the accuracy is difficult due to the reduction of the effective capacitance area because of the miniaturization of the device. The sensitivity of the piezoelectric effect sensor is easy to drift, needs frequent correction, is slow to return to zero, and is not suitable for continuous testing. The tunnel effect sensor has complex manufacturing process, relatively difficult realization of a detection circuit, low yield and unfavorable integration.
The micro-mechanical displacement sensor measures the displacement by means of the force-electricity conversion of the detection device, and the sensitivity and the resolution are very important. Due to the miniaturization and integration of the displacement sensor, the detection sensitive area is reduced, so that the indexes of the sensitivity, the resolution and the like of the detection reach the detection limit state of the sensitive area, the further improvement of the detection precision of the sensor is limited, and the requirements of modern military and civil equipment are difficult to meet.
In a Magnetic multilayer film structure in which an insulator or a semiconductor nonmagnetic layer is interposed between a Magnetic pinned layer and a Magnetic free layer based on the spin effect of electrons, since the passage of current between the Magnetic pinned layer and the Magnetic free layer is based on the tunneling effect of electrons, this multilayer film structure is called a Magnetic Tunnel Junction (MTJ). The tunneling current and tunneling resistance of such a magnetic tunnel junction under the influence of a voltage across the insulating layer depend on the relative orientation of the magnetizations of the two ferromagnetic layers (the magnetic pinned layer and the magnetic free layer). When the magnetization of the free magnetic layer changes direction under an external field while the magnetization of the pinned layer does not change, the relative orientation of the magnetizations of the two magnetic layers changes, and a large change in resistance is observed across the magnetic tunnel junction of the insulating layer. This physical effect is based on the Tunneling effect of electrons in the insulating layer, which is called Tunneling Magnetoresistance (TMR). That is, the TMR sensor utilizes magnetic field variation to induce a change in magnetoresistance.
At present, as a fourth-generation magnetoresistive sensor, a TMR sensor has the characteristics of high sensitivity, good linearity, wide dynamic range, and the like, and makes up for the deficiency of the last-generation Giant magnetoresistive effect (GMR) to a certain extent. TMR has replaced GMR heads in the high precision technology field of hard disk heads where performance requirements such as operational stability are extremely high. Therefore, the performance of TMR has been subjected to the most stringent tests. With the large-scale application of the TMR magnetic sensor, the excellent performance of the TMR magnetic sensor can permeate into the sensor industry and the application field along with the development of industrialization of the TMR magnetic sensor, and a brand-new technical solution is provided for a plurality of sensor application fields.
Disclosure of Invention
The invention aims to provide a micro-mechanical displacement sensor which measures the tiny change of displacement based on the tunnel magnetoresistance effect, thereby improving the detection precision of the micro-mechanical displacement sensor.
The invention relates to a uniaxial micromechanical displacement sensor based on a tunnel magnetoresistance effect, which comprises:
a bonding substrate;
the displacement sensitive body is composed of a displacement sensitive body frame, a sensitive mass block and a folding beam, the displacement sensitive body frame is fixed on the bonding substrate, and the sensitive mass block is arranged in the displacement sensitive body frame and is connected with the displacement sensitive body frame through the folding beam; the sensitive mass block is supported by the inflection beam and can vibrate along the direction (Z axial direction) vertical to the surface of the bonding substrate;
the ferromagnetic thin film is fixed on the upper surface of the sensitive mass block and vibrates along the direction (Z axial direction) vertical to the surface of the bonding substrate along with the sensitive mass block;
the tunnel magneto-resistor is arranged on the upper surface of the bonding substrate and corresponds to the position of the ferromagnetic thin film on the sensitive mass block, and the tunnel magneto-resistor is connected with a tunnel magneto-resistor electrode arranged on the bonding substrate through a resistor lead-out wire.
The single-axis micromechanical displacement sensor is used for detecting the displacement in the Z-axis direction.
Preferably, four folding beams with the same size are symmetrically arranged on the displacement sensitive body frame and connected with the sensitive mass block.
In the invention, the inflection beam is used for supporting the sensitive mass block to only vibrate along the Z-axis, and has no displacement in the X-axis and the Y-axis. Therefore, the thickness of the folded beam is far smaller than the width of the folded beam, and the rigidity of the folded beam in the Z-axis direction is far smaller than that of the other two directions.
Furthermore, the basic structure of the tunnel magnetoresistance of the present invention is a resistive layer with tunnel magnetoresistance effect, which is formed by a plurality of ferromagnetic layers arranged on a semiconductor material substrate layer and separated by insulating layers.
More specifically, the tunnel magnetoresistor has a square structure.
As a preferred technical scheme of the invention, only one displacement sensitive body is fixed on the bonding substrate, the displacement sensitive body is arranged at the central position of the bonding substrate, and the area of the bonding substrate is larger than that of the displacement sensitive body.
Based on the structure, the tunnel magnetic sensitive resistance electrode is arranged at the position of the bonding substrate where the displacement sensitive body is exposed.
Furthermore, the surface of the sensing mass block is square, namely the length of the sensing mass block in the X axial direction is equal to that in the Y axial direction.
Meanwhile, the ferromagnetic film is arranged at the central position of the displacement sensitive body. The ferromagnetic film is a multilayer nano-film structure which is sequentially arranged on a semiconductor material substrate layer.
The single-shaft micromechanical displacement sensor adopts the integral structure design, integrates and manufactures the displacement sensor on the same frame body, has reasonable and simple structure design, convenient use and good reliability, and is suitable for the miniaturization of devices.
The single-shaft micromechanical displacement sensor is characterized in that the ferromagnetic thin film is arranged on the sensitive mass block and is opposite to the tunnel magnetoresistor arranged in the corresponding area on the bonding substrate, the resistance value of the tunnel magnetoresistor can be changed violently under the weak magnetic field change, and the change can improve the sensitivity of the micromechanical displacement sensor by 1-2 orders of magnitude.
Drawings
Fig. 1 is a schematic structural view of a single-axis micromechanical displacement sensor according to the present invention.
Fig. 2 is a schematic structural view of the displacement sensor 5 in fig. 1.
Fig. 3 is a schematic structural view of a portion of the bonding substrate of fig. 1.
Fig. 4 is a partially enlarged view of the folded beam 4 in fig. 1.
In the figure: 1-a bonding substrate; 2-displacement sensitive body frame; 3-a proof mass; 4-folding back the beam; 5-displacement sensitive body; 6-ferromagnetic thin film; 7-tunnel magnetoresistor; 8-resistance lead-out wire; and 9, tunneling magneto-resistance electrode.
Detailed Description
The technical solution of the present invention is described in detail by the following specific examples. Examples of the embodiments are illustrated in the accompanying drawings, it being emphasized that the embodiments described by way of example in the drawings are illustrative only and are not to be taken as limiting the invention in any way.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
As shown in fig. 1, fig. 2, and fig. 3, the constituent units of the single-axis micromechanical displacement sensor according to the embodiment of the present invention include a bonding substrate 1, a displacement sensitive body 5, a ferromagnetic thin film 6, and a tunnel magnetic resistor 7.
The bonded substrate 1 serves as a carrier, which may be made of a semiconductor material, for carrying the displacement sensitive body 5. The displacement sensitive body 5 is arranged above the bonding substrate 1, and the center of the displacement sensitive body 5 is opposite to the center of the bonding substrate 1.
The structure of the displacement sensitive body 5 is specifically shown in fig. 2, and further includes a sensitive mass block 3 in the Z-axis direction, a folded beam 4 in the Z-axis direction, and a displacement sensitive body frame 2.
Specifically, the displacement sensor 5 is an integral structure, and the displacement sensor frame 2 is used as a carrier on which the sensing mass 3 capable of sensing the Z-axis direction is formed. The sensing mass block 3 in the Z-axis direction is connected with the displacement sensing body frame body 2 through four Z-axis direction inflection beams 4. Wherein, the upper and lower surfaces of the sensing mass block 3 are square.
According to the sensitivity of the sensitive mass block 3 to the Z-axis direction, the size of the inflection beam 4 is set to be that the thickness is far smaller than the width so as to ensure that the rigidity of the inflection beam in the Z-axis direction is far smaller than that of the inflection beam in the other two directions, and the inflection beam 4 in the Z-axis direction is arranged on the upper and lower sides of the sensitive mass block 3. It should be noted that the number of the folded beams may be modified according to the performance requirement of the displacement sensor, for example, although two Z-axis folded beams 4 are respectively disposed on the upper and lower sides of the sensing mass 3 in this embodiment, according to the above description, an equal number of folded beams may be added on both sides, and the added folded beams have the same properties as those described above.
The ferromagnetic thin film 6 is arranged at the center of the upper surface of the sensing mass block 3 and corresponds to the tunnel magnetic resistor 7 manufactured on the bonding substrate 1.
As shown in fig. 1 and 3, the bonding substrate 1 is square and has a larger area than the displacement sensor 5, a tunnel thermistor 7 is provided at the center of the upper surface of the bonding substrate, and the tunnel thermistor 7 is square and is connected to a tunnel thermistor electrode 9 provided at the edge of the bonding substrate 1 via a resistor lead-out wire 8.
The tunnel thermistor 7 includes a ferromagnetic layer, an insulating layer, and a ferromagnetic layer arranged in this order on a semiconductor material substrate layer (e.g., the upper surface of the bonded substrate 1). The tunnel magnetoresistor 7 can be designed and manufactured by molecular beam epitaxy, which is a method for growing high-quality crystal thin films on a semiconductor wafer, and the high-quality crystal thin films are grown on a semiconductor material substrate layer by layer according to a crystal structure under a vacuum condition, and form a nano-scale film layer and are deposited layer by layer. In the deposition process, the quality and the thickness of the film are strictly controlled, so that the detection accuracy and the sensitivity of the micromechanical displacement sensor are prevented from being influenced by the quality and the thickness of the film.
The size, shape and thickness of the ferromagnetic thin film 6 can also be determined according to the strength and distribution requirement of the tunnel magnetoresistor 7 of the micromechanical displacement sensor on the magnetic field strength.
The ferromagnetic thin film 6 may have a multilayer structure, and may be preferably used in combination with the tunnel magnetoresistor 7. The ferromagnetic thin film 6 may be made of multiple layers of ferromagnetic material nano films sequentially arranged on the upper surface of the sensing mass block 3. The ferromagnetic thin film 6 may be grown on the proof mass 3 by molecular beam epitaxy.
When the micro-mechanical displacement sensor has displacement in the Z-axis direction, the sensing mass block 3 deviates from the equilibrium position under the inertia effect and vibrates in the Z-axis direction. Due to the change of the relative distance, the strength of the magnetic field generated by the ferromagnetic thin film 6 on the upper surface of the sensing mass 3 at the corresponding position of the tunnel magneto-resistor 7 on the bonding substrate 1 can be increased or decreased. The change of the magnetic field intensity causes the tunnel magnetoresistance effect, so that the resistance value of the tunnel magnetic resistor changes violently. Therefore, a weak displacement signal can be converted into a strong electrical signal, and the magnitude of Z-axis input displacement can be detected by processing the signal.
The single-shaft micro-mechanical displacement sensor adopts the integral structure design, is suitable for miniaturization of devices, and can improve the sensitivity of the micro-mechanical displacement sensor by 1 to 2 orders of magnitude.
Although specific embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (7)
1. A single-axis micromechanical displacement sensor, comprising:
a bonding substrate;
the displacement sensitive body is composed of a displacement sensitive body frame body, a sensitive mass block and a inflection beam, the displacement sensitive body frame body is fixed on the bonding substrate, and the sensitive mass block is arranged in the displacement sensitive body frame body and is connected with the displacement sensitive body frame body through the inflection beam; the sensitive mass block is supported by the inflection beam and can vibrate along the direction vertical to the surface of the bonding substrate;
the ferromagnetic thin film is fixed on the upper surface of the sensitive mass block and vibrates along the direction vertical to the surface of the bonding substrate along with the sensitive mass block;
the tunnel magneto-resistor is arranged on the upper surface of the bonding substrate and corresponds to the position of the ferromagnetic thin film on the sensitive mass block, and the tunnel magneto-resistor is connected with a tunnel magneto-resistor electrode arranged on the bonding substrate through a resistor lead-out wire;
four folding beams with the same size are symmetrically arranged on the displacement sensitive body frame body and connected with the sensitive mass block; the sensitive mass block is symmetrically distributed with 4 beam structure units, the inner center of the sensitive mass block is provided with a T-shaped beam, the tail part of the T-shaped beam is connected with the displacement sensitive body frame body, two sides of the top part of the T-shaped beam are connected with two beams, the two beams are parallel to the vertical part of the T-shaped beam, the T-shaped beam is connected with the sensitive mass block through the two beams, and the T-shaped beam and the two beams jointly form a folding beam; the size and shape of the sensitive mass block are matched with the inner frame of the displacement sensitive body frame body.
2. The uniaxial micromechanical displacement sensor according to claim 1, wherein said tunneling magnetoresistors are resistive layers with tunneling magnetoresistance effect formed by a plurality of ferromagnetic layers separated by insulating layers arranged on a substrate layer of semiconductor material.
3. The uniaxial micromechanical displacement sensor according to claim 2, wherein said tunneling magnetoresistors are square in configuration.
4. The uniaxial micromechanical displacement sensor according to claim 3, wherein a displacement sensor is fixed on the bonding substrate, the displacement sensor is arranged at the center of the bonding substrate, and the area of the bonding substrate is larger than that of the displacement sensor.
5. The uniaxial micromechanical displacement sensor according to claim 4, wherein the tunneling magneto-resistive electrode is disposed on the bonding substrate at a position where the displacement sensitive body is exposed.
6. The uniaxial micromechanical displacement sensor according to claim 5, wherein the surface of the proof mass is square.
7. The uniaxial micromechanical displacement sensor according to claim 6, wherein the ferromagnetic thin film is placed in the center of the displacement sensitive body.
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109941956B (en) * | 2019-02-25 | 2021-11-12 | 潍坊歌尔微电子有限公司 | MEMS sensor and electronic equipment |
| CN109883456B (en) * | 2019-04-02 | 2024-06-28 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
| CN112344840B (en) * | 2020-10-28 | 2022-02-08 | 中北大学南通智能光机电研究院 | High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect |
| CN112857232B (en) * | 2021-04-07 | 2022-06-07 | 中北大学 | Long-range optical self-reference displacement sensor |
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