CN102841217A - Tri-axial accelerometer with giant magneto-resistance effect - Google Patents
Tri-axial accelerometer with giant magneto-resistance effect Download PDFInfo
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Abstract
The invention discloses a tri-axial accelerometer with giant magneto-resistance effect. The tri-axial accelerometer comprises a bonding substrate, giant magneto-sensitive resistors and micro accelerators, wherein the giant magneto-sensitive resistors are arranged on the upper surface of the bonding substrate, and are in positional correspondence to giant magneto-sensitive resistors on the upper surface of a sensitive mass block of the accelerator in each detection direction; the micro-accelerators are arranged above the bonding substrate and are connected with the bonding substrate; and each of the micro-accelerators comprises the sensitive mass block, a ferromagnetic thin film and a cantilever beam. According to the tri-axial micro-mechanical accelerator disclosed by the invention, an overall structural design is adopted, and three accelerators for detection in different directions are integrally manufactured on the same frame, therefore, the tri-axial accelerometer is reasonable in structure, simple in detection circuit, convenient to use, good in reliability and suitable for microminiaturization.
Description
Technical field
The present invention relates to micro-inertial navigation technology association area, in particular to a kind of three micro-mechanical accelerometers of giant magnetoresistance effect.
Background technology
At present; The detection mode that micro-mechanical accelerometer is commonly used is pressure resistance type, condenser type, piezoelectric type and tunnel effect type etc.; The piezoresistive effect principle of highly doped silicon of being based on pressure resistance type realizes; The pressure-sensitive device that highly doped silicon forms has stronger dependence to temperature, and its electric bridge testing circuit of being made up of pressure-sensitive device also can cause sensitivity drift because of temperature variation; The raising of condenser type precision is to utilize to increase capacity area, because the microminaturization of device, its precision is difficult to improve because of dwindling of effective capacitance area.Piezoelectric effect is received the sensitivity of sensor and is prone to drift, needs often to proofread and correct, and it is slow to make zero, unsuitable follow-on test.Tunnel effect is received sensor, and manufacturing process is complicated, and testing circuit also relative difficult realizes that yield rate is low, is unfavorable for integrated.
Micro-mechanical accelerometer is changed by pick-up unit realizable force electricity the measurement of acceleration and is accomplished; Its sensitivity, resolution are crucial; Because accelerometer is microminiaturized and integrated, the sensitizing range of detection reduces thereupon, so make the indexs such as sensitivity, resolution of detection reach the ultimate limit state of sensitizing range detection; Thereby limited the further raising of accelerometer accuracy of detection, be difficult to satisfy the needs of modern military, civilian equipment.
Giant magnetoresistance effect is a kind of quantum mechanics and condensed state physics phenomenon, is a kind of of magnetoresistance, can in the magnetic material nanometer thin rete structure alternate with nonmagnetic substance, observe.The resistance value of this structural material is relevant with the DOM of ferrimagnet thin layer; Resistance value under the two-layer magnetic material DOM reverse situation; The obvious resistance value when identical greater than DOM, resistance has very big variable quantity under very weak externally-applied magnetic field.Giant magnetoresistance effect and beam type acceleration detection mode are combined, and be applied to the context of detection of micro-mechanical accelerometer, can improve the accuracy of detection of micro-mechanical accelerometer.
Summary of the invention
The present invention aims to provide three micro-mechanical accelerometers, and this micro-mechanical accelerometer is three micro-mechanical accelerometers based on giant magnetoresistance effect, can improve the accuracy of detection of three micro-mechanical accelerometers.
The invention provides a kind of three micro-machine acceleration devices, comprising: the bonding substrate; Huge mistor, said huge mistor is located at the bonding upper surface of base plate, and corresponding with the ferromagnetic thin film position of each responsive mass upper surface of micro-acceleration gauge, and huge mistor utilizes huge mistor extension line to draw and be connected with huge mistor electrode; And micro-acceleration gauge; Said micro-acceleration gauge is located at bonding substrate top and is connected with the bonding substrate; And micro-acceleration gauge comprises: responsive mass; According to the detection side to different responsive mass be divided into three kinds, respectively in order to detecting X, Y, three axial acceleration of Z, the shape of the responsive mass of three kinds of axial accelerometers, size and be provided with direction according to its detection side to difference and different; Ferromagnetic thin film is established said ferromagnetic thin film at responsive mass upper surface, and said ferromagnetic thin film can be with responsive mass along the direction vibration perpendicular to said bonding upper surface of base plate.Semi-girder is used to support the responsive mass of micro-acceleration gauge, and it is different to the shape and the quantity of the semi-girder of accelerometer sensitive mass to be used to support disalignment.
Further, described bonding substrate is big than the micro-acceleration gauge area, and upper surface is provided with huge mistor and extension line and electrode, and the bonding substrate is in order to carry micro-acceleration gauge, and accelerometer is arranged at the center of bonding substrate.
Further, described huge mistor has a plurality of, places the different belows of detecting the orientation-sensitive mass respectively, and corresponding with the ferromagnetic thin film position of responsive mass upper surface; Huge mistor adopts
shape, to increase effective length; Huge mistor is drawn through huge mistor extension line, links to each other with huge mistor electrode.
Further, described huge mistor is included in insulation course, tantalum layer, nifesphere, copper layer, cobalt layer, manganese layer and the tantalum layer of arranging successively on the semiconductive material substrate layer.
Further; Described micro-acceleration gauge also comprises the micro-acceleration gauge framework; Described micro-acceleration gauge framework is an one-piece construction, which is provided with to detect X, Y, three three kinds of axial accelerometers of Z respectively, is connected with the responsive mass of each accelerometer through semi-girder; Described semi-girder is in order to connect responsive mass and micro-acceleration gauge framework.
Further; Described responsive mass according to the detection side to difference and different: the accelerometer sensitive mass upper surface in order to detect Z-direction is square; Upper surface in order to detect the axial accelerometer sensitive mass of X axis and Y is rectangular; And according to the detection side to different responsive masses the direction difference is set; The accelerometer sensitive mass X that detects X axis to length less than Y to length, detect the axial accelerometer sensitive mass Y of Y to length less than X to length.
Further; Described semi-girder according to the accelerometer detection side to the difference size and the direction that are provided with different: in order to the semi-girder thickness of the accelerometer sensitive mass of joint detection Z-direction much smaller than width guarantee its in the rigidity of Z-direction much smaller than other both direction, and four limits, front, rear, left and right of the responsive mass of Z axial acceleration meter all are provided with semi-girder; In order to the semi-girder thickness of the joint detection X axis accelerometer sensitive mass axial with detecting Y much larger than its width; The accelerometer semi-girder X that detects X axis to length much smaller than Y to length; And only be located at the forward and backward side of responsive mass; Detect the axial accelerometer semi-girder Y of Y to length much smaller than X to length, and only be located at the left and right side of responsive mass.
Further, described ferromagnetic thin film is included in silicon dioxide layer, titanium dioxide layer, platinum layer, cobalt ferrite layer and the ferrous acid bismuth layer of arranging successively on the semiconductive material substrate layer.
According to three micro-mechanical accelerometers of the embodiment of the invention, adopt overall construction design, three kinds of integrated being made on the same framework of accelerometer of detecting different directions, reasonable in design is fit to the microminiaturization of device.Responsive mass upper surface is provided with ferromagnetic thin film, and it is right against the huge mistor that bonding upper surface of base plate respective regions is made.Acute variation can take place in the resistance of huge mistor under faint changes of magnetic field, and this variation can improve the 1-2 one magnitude with the sensitivity of micro-mechanical accelerometer.Except that above characteristics, the testing circuit simplicity of design of this micro-acceleration gauge, easy to use, good reliability are fit to microminiaturized.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Fig. 1 is the one-piece construction figure of the embodiment of the invention;
Fig. 2 is the integrally-built vertical view of the embodiment of the invention;
Fig. 3 is the micro-acceleration gauge three-dimensional structure diagram of the embodiment of the invention;
Fig. 4 is the micro-acceleration gauge vertical view of the embodiment of the invention;
Fig. 5 is the bonding substrate three-dimensional structure diagram figure of the embodiment of the invention;
Fig. 6 is the bonding substrate vertical view of the embodiment of the invention;
Fig. 7 is the ferromagnetic thin film structural drawing of the embodiment of the invention;
Fig. 8 is the huge mistor structural drawing of the embodiment of the invention;
Shown in the figure, list of numerals is following:
1, the responsive mass of X axle, 2, the responsive mass of Y axle, 3, the responsive mass of Z axle, 4, X axle semi-girder, 5, Y axle semi-girder, 6, Z axle semi-girder; 7, ferromagnetic thin film, 8, the micro-acceleration gauge framework, 9, the bonding substrate, 10, huge mistor, 11, huge mistor extension line, 12, huge mistor electrode; 13, micro-acceleration gauge frame line, 15, substrate layer, 16, insulation course, 17, tantalum layer, 18, nifesphere; 19, copper layer, 20, the cobalt layer, 21, the ferrimanganic layer, 22, tantalum layer, 23, silicon dioxide layer; 24, titanium dioxide layer, 25, platinum layer, 26, cobalt ferrite layer, 27, ferrous acid bismuth layer, 28, micro-acceleration gauge
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention; It will be appreciated that; The orientation of indications such as term " " center ", " on ", D score, " preceding ", " back ", " left side ", " right side " or position relation are for based on orientation shown in the drawings or position relation; only be to describe with simplifying for the ease of describing the present invention, rather than the device or the element of indication or hint indication must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In description of the invention, need to prove that only if clear and definite regulation and qualification are arranged in addition, term " links to each other ", " connection " should be done broad understanding, for example, can be to be fixedly connected, also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can link to each other indirectly through intermediary, can be the connection of two element internals.For those of ordinary skill in the art, can concrete condition understand above-mentioned term concrete implication in the present invention.
Below in conjunction with accompanying drawing the present invention is further specified:
Shown in Fig. 1-2, three micro-mechanical accelerometer devices comprise: bonding substrate 9, ferromagnetic thin film 7 and micro-acceleration gauge 28 according to an embodiment of the invention.
Particularly, can be carrier with bonding substrate 9, for example, bonding substrate 9 can be processed by semiconductor material, and ferromagnetic thin film 7 corresponding positions of bonding substrate 9 upper surfaces and each responsive mass upper surface of micro-acceleration gauge are respectively equipped with huge mistor 10; Be provided with micro-acceleration gauge 28 with bonding substrate top, and the center of micro-acceleration gauge 28 and bonding substrate center over against.
According to three micro-mechanical accelerometers of the embodiment of the invention, adopt overall construction design, reasonable in design is fit to the microminiaturization of device.The ferromagnetic thin film 7 that the upper surface of the responsive mass 1,2,3 of each axial acceleration meter of micro-acceleration gauge is made; Be right against each self-corresponding huge mistor 10 of bonding substrate 9 upper surfaces; Acute variation can take place in the resistance of huge mistor 10 under faint changes of magnetic field; This variation can improve the 1-2 one magnitude with the sensitivity of micro-mechanical accelerometer, and simple, easy to use, the good reliability of this Device Testing circuit design is fit to microminiaturized.
Shown in Fig. 3-4; Follow according to one embodiment of the present of invention, micro-acceleration gauge 28 further comprises: the responsive mass 1 of X axle, the responsive mass 2 of Y axle, the responsive mass 3 of Z axle, X axle semi-girder 4, Y axle semi-girder 5, Z axle semi-girder 6, ferromagnetic thin film 7, micro-acceleration gauge framework 8.
Particularly, micro-acceleration gauge 28 is an one-piece construction, with the micro-acceleration gauge framework be carrier be manufactured with respectively on it can responsive X, Y, each axial responsive mass 1,2,3 of Z; The responsive mass 1 of X axle is connected with micro-acceleration gauge framework 8 through two X axle semi-girders 4; The responsive mass 2 of Y axle is connected with micro-acceleration gauge framework 8 through two Y axle semi-girders 5; The responsive mass 3 of Z axle is connected with micro-acceleration gauge framework 8 through four Z axle semi-girders 6;
Responsive mass according to the detection side to difference and different: responsive mass 3 upper surfaces of Z axle are square; The upper surface of the responsive mass 1,2 of X axle and Y axle is rectangular; And according to the detection side to different responsive masses the direction difference is set; The directions X length of the responsive mass 1 of X axle is less than Y direction length, and the Y direction length of the responsive mass 2 of Y axle is less than directions X length;
Semi-girder according to the accelerometer detection side to the difference size and the direction that are provided with different: Z axle semi-girder 6 thickness are much smaller than width; With guarantee its in the rigidity of Z-direction much smaller than other both direction, and four limits, front, rear, left and right of the responsive mass 3 of Z axle all are provided with Z axle semi-girder 6; Semi-girder 4,5 thickness of the responsive mass of X axle and Y axle are much larger than its width; At length; The directions X length that promptly detects X axle semi-girder 4 is much smaller than Y direction length; And only be located at the forward and backward side of the responsive mass 1 of X axle, the Y direction length of Y axle semi-girder 5 is much smaller than directions X length, and only is located at the left and right side of the responsive mass 2 of Y axle.Need to prove; The radical of semi-girder can be according to the accelerometer performance requirement is changed accordingly here on the one hand; For example, the responsive mass 3 of Z axle respectively has a Z axle semi-girder 6 all around among the embodiment, according to top elaboration; Can suitably increase the equivalent amount semi-girder in each side, it is consistent with foregoing description character that institute increases semi-girder.On the other hand, each detection side also can change to the quantity of accelerometer accordingly in the micro-acceleration gauge 28.
Ferromagnetic thin film 7 is arranged at the center of the upper surface of each responsive mass 1,2,3, and with bonding substrate 9 on corresponding one by one on huge mistor 10 positions that make; The size of ferromagnetic thin film 7, shape, thickness can be decided according to the power and the distribution needs situation of 10 pairs of magnetic field intensitys of huge mistor of accelerometer.
Shown in Fig. 5-6; According to one embodiment of present invention; Bonding substrate 9 is a square; And area is bigger than micro-acceleration gauge 28; Upper surface is provided with huge mistor 10 and huge mistor extension line 11 and huge mistor electrode 12, and huge mistor adopts
shape, to increase effective length; And bonding substrate 9 is in order to carry micro-acceleration gauge 28, and micro-acceleration gauge 28 is arranged at the top of bonding substrate 9, and the center over against.In addition, the huge mistor 10 of each on the bonding substrate 9 respectively with micro-acceleration gauge 28 on ferromagnetic thin film 7 positions of each responsive mass 1/2/3 upper surface corresponding.
As shown in Figure 7, according to one embodiment of present invention, ferromagnetic thin film layer 7 can be sandwich construction.Thus, can be used with huge mistor 10 better.Preferably, ferromagnetic thin film layer 7 can be included in silicon dioxide layer 23, titanium dioxide layer 24, platinum layer 25, cobalt ferrite layer 26 and the ferrous acid bismuth layer 27 that the upper surface of responsive mass 1/2/3 is arranged successively.Need to prove; Above-mentioned ferromagnetic thin film layer 7 can adopt through molecular beam epitaxy and design and produce, molecular beam epitaxy be a kind of on semiconductor wafer the crystal film of growing high-quality, under vacuum condition; In layer be grown on the responsive mass 1/2/3 by crystal structure arrangement; And forming the nanoscale rete, deposit successively is in deposition process; The quality, the thickness that need strict control film forming are with the quality of avoiding film forming and the accuracy of detection and the sensitivity of thickness effect micro-mechanical accelerometer.
As shown in Figure 8; According to one embodiment of present invention, huge mistor 10 is included in insulation course 16, tantalum layer 17, nifesphere 18, copper layer 19, cobalt layer 20, ferrimanganic layer 21 and the tantalum layer 22 of arranging successively on the semiconductive material substrate layer 15 (upper surface of bonding substrate 9).Need to prove; Above-mentioned huge mistor 10 can adopt through molecular beam epitaxy and design and produce, molecular beam epitaxy be a kind of on semiconductor wafer the crystal film of growing high-quality, under vacuum condition; By crystal structure arrangement being grown on the semiconductive material substrate layer 15 in layer; And forming the nanoscale rete, deposit successively is in deposition process; The quality, the thickness that need strict control film forming are with the quality of avoiding film forming and the accuracy of detection and the sensitivity of thickness effect micro-mechanical accelerometer.
When accelerometer when Z-direction has acceleration, responsive mass 1/2/3 can depart from the equilibrium position under inertia effect, vibrate along the X/Y/Z direction of principal axis.Because of relative spacing changes, the intensity of the huge mistor position that each responsive mass is corresponding on bonding substrate 9, magnetic field that is produced by the ferromagnetic thin film layer of responsive mass 1/2/3 upper surface 7 can increase or reduce.The variation of magnetic field intensity causes that giant magnetoresistance effect makes the resistance of huge mistor that violent variation take place.So just can be converted into a stronger electrical signal to a faint acceleration signal, through just can detect the size of X, Y, three axial input accelerations of Z to this Signal Processing.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention; Those having ordinary skill in the art will appreciate that; Under the situation that does not break away from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited claim and equivalent thereof.
Claims (8)
1. three micro-machine acceleration devices, its characteristic is, comprising:
The bonding substrate;
Huge mistor, said huge mistor is located at the bonding upper surface of base plate, and corresponding with the ferromagnetic thin film position of each responsive mass upper surface of micro-acceleration gauge, and huge mistor utilizes huge mistor extension line to draw and be connected with huge mistor electrode;
And micro-acceleration gauge; Said micro-acceleration gauge is located at bonding substrate top and is connected with the bonding substrate; And micro-acceleration gauge comprises: responsive mass; According to the detection side to different responsive mass be divided into three kinds, respectively in order to detecting X, Y, three axial acceleration of Z, the shape of the responsive mass of three kinds of axial accelerometers, size and be provided with direction according to its detection side to difference and different; Ferromagnetic thin film; If said ferromagnetic thin film is at responsive mass upper surface; Said ferromagnetic thin film can be with responsive mass along the direction vibration perpendicular to said bonding upper surface of base plate; Semi-girder is used to support the responsive mass of micro-acceleration gauge, and it is different to the shape and the quantity of the semi-girder of accelerometer sensitive mass to be used to support disalignment.
2. three micro-mechanical accelerometer devices according to claim 1; It is characterized in that; Described bonding substrate is big than the micro-acceleration gauge area; Upper surface is provided with huge mistor and extension line and electrode, and the bonding substrate is in order to carry micro-acceleration gauge, and accelerometer is arranged at the center of bonding substrate.
3. three micro-mechanical accelerometer devices according to claim 1 is characterized in that described huge mistor has a plurality of, place the different belows of detecting the orientation-sensitive mass respectively, and corresponding with the ferromagnetic thin film position of responsive mass upper surface; Huge mistor adopts
shape, to increase effective length; Huge mistor is drawn through huge mistor extension line, links to each other with huge mistor electrode.
4. three micro-mechanical accelerometer devices according to claim 1 is characterized in that, described huge mistor is included in insulation course, tantalum layer, nifesphere, copper layer, cobalt layer, manganese layer and the tantalum layer of arranging successively on the semiconductive material substrate layer.
5. three micro-mechanical accelerometer devices according to claim 1; It is characterized in that; Described micro-acceleration gauge also comprises the micro-acceleration gauge framework; Described micro-acceleration gauge framework is an one-piece construction, which is provided with to detect X, Y, three three kinds of axial accelerometers of Z respectively, is connected with the responsive mass of each accelerometer through semi-girder; Described semi-girder is in order to connect responsive mass and micro-acceleration gauge framework.
6. three micro-mechanical accelerometer devices according to claim 5; It is characterized in that; Described responsive mass according to the detection side to difference and different: the accelerometer sensitive mass upper surface in order to detect Z-direction is square; Upper surface in order to detect the axial accelerometer sensitive mass of X axis and Y is rectangular; And according to the detection side to different responsive masses the direction difference is set, the accelerometer sensitive mass X that detects X axis to length less than Y to length, detect the axial accelerometer sensitive mass Y of Y to length less than X to length.
7. three micro-mechanical accelerometer devices according to claim 1; It is characterized in that; Described semi-girder according to the accelerometer detection side to the difference size and the direction that are provided with different: in order to the semi-girder thickness of the accelerometer sensitive mass of joint detection Z-direction much smaller than width guarantee its in the rigidity of Z-direction much smaller than other both direction, and four limits, front, rear, left and right of the responsive mass of Z axial acceleration meter all are provided with semi-girder; In order to the semi-girder thickness of the joint detection X axis accelerometer sensitive mass axial with detecting Y much larger than its width; The accelerometer semi-girder X that detects X axis to length much smaller than Y to length; And only be located at the forward and backward side of responsive mass; Detect the axial accelerometer semi-girder Y of Y to length much smaller than X to length, and only be located at the left and right side of responsive mass.
8. three micro-mechanical accelerometer devices according to claim 1 is characterized in that, described ferromagnetic thin film is included in silicon dioxide layer, titanium dioxide layer, platinum layer, cobalt ferrite layer and the ferrous acid bismuth layer of arranging successively on the semiconductive material substrate layer.
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| CN106443069A (en) * | 2016-11-22 | 2017-02-22 | 三峡大学 | Anisotropic-magnetoresistance-effect-based differential single-shaft MEMS accelerometer |
| CN106501547A (en) * | 2016-11-22 | 2017-03-15 | 三峡大学 | A kind of differential type single shaft mems accelerometer based on giant magnetoresistance effect |
| CN106645797A (en) * | 2016-10-26 | 2017-05-10 | 东南大学 | TMR (Tunneling magnetoresistance) accelerometer based on gap change |
| CN107131819A (en) * | 2017-06-12 | 2017-09-05 | 中北大学 | Single shaft micromechanics displacement transducer based on tunnel magneto-resistance effect |
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| CN106645797A (en) * | 2016-10-26 | 2017-05-10 | 东南大学 | TMR (Tunneling magnetoresistance) accelerometer based on gap change |
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| CN106501547B (en) * | 2016-11-22 | 2019-04-09 | 三峡大学 | A kind of differential type single shaft mems accelerometer based on giant magnetoresistance effect |
| CN107255737A (en) * | 2017-05-18 | 2017-10-17 | 东南大学 | A kind of tunnel magnetoresistive formula accelerometer device and method changed based on magnetic direction |
| CN107131819B (en) * | 2017-06-12 | 2023-02-24 | 中北大学 | Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect |
| CN107131819A (en) * | 2017-06-12 | 2017-09-05 | 中北大学 | Single shaft micromechanics displacement transducer based on tunnel magneto-resistance effect |
| CN107356249A (en) * | 2017-08-15 | 2017-11-17 | 中北大学 | A kind of micro- inertia component of tunnel magnetoresistive detection |
| CN107421525A (en) * | 2017-08-15 | 2017-12-01 | 中北大学 | A kind of tunnel magnetoresistive disresonance type 3 axis MEMS gyro |
| CN109142786A (en) * | 2018-09-29 | 2019-01-04 | 东南大学 | A kind of tunnel magnetoresistive based on torsional pendulum type structure declines accelerometer device |
| CN109142786B (en) * | 2018-09-29 | 2020-11-03 | 东南大学 | Tunnel magnetoresistance type micro accelerometer device based on torsional pendulum type structure |
| CN109557337A (en) * | 2018-11-28 | 2019-04-02 | 苏州大学 | A kind of the tunnel magnetoresistive acceleration measurement system and its measurement method of Axial changes |
| CN110531114B (en) * | 2019-07-26 | 2020-07-28 | 西安交通大学 | Pure axial deformation MEMS triaxial piezoresistive accelerometer chip and preparation method thereof |
| CN110531114A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | A kind of MEMS three-axis piezoresistance formula accelerometer chip of purely axial deformation and preparation method thereof |
| CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
| CN110887977A (en) * | 2019-11-28 | 2020-03-17 | 上海应用技术大学 | Nanoscale piezoresistive acceleration sensor and preparation method thereof |
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