CN102914394B - MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor - Google Patents
MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor Download PDFInfo
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- CN102914394B CN102914394B CN201210404330.8A CN201210404330A CN102914394B CN 102914394 B CN102914394 B CN 102914394B CN 201210404330 A CN201210404330 A CN 201210404330A CN 102914394 B CN102914394 B CN 102914394B
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Abstract
The invention relates to a MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor which comprises a bonding substrate, a ferromagnetic film carrier, a ferromagnetic film, a giant magneto-resistor and a protecting cover, wherein the ferromagnetic film carrier is arranged above the bonding substrate; the ferromagnetic film is arranged at the center of the lower surface of an elastic film of the ferromagnetic film carrier; the giant magneto-resistor is arranged at the center of the upper surface of the bonding substrate and is opposite to the ferromagnetic film; the protecting cover is fixed above the ferromagnetic film carrier; a contact hole for communicating an inner cavity of the protecting cover with the outside is arranged in the middle of the upper surface of the protecting cover; a measured pressure acts on the silicon elastic film of the ferromagnetic film carrier through the contact hole and bends the silicon elastic film along a Z direction, so that the ferromagnetic film is driven to move along the Z direction, a magnetic field generated by the ferromagnetic film is slightly changed and the resistance value of the giant magneto-resistor is violently changed; the change in current or voltage of a corresponding circuit in a measuring circuit is caused by the change in the resistance value, so that the measurement for the measured pressure is realized; and the elevation and the pressure have a certain relation, so that the elevation height is obtained through the measured pressure.
Description
Technical field
The invention belongs to the application of surveying instrument instrument, relate to a kind of MEMS giant magnetic resistance high stress sensor.
Background technology
Pressure transducer is a kind of sensor the most frequently used in industrial practice, it is widely used in various industrial automatic control environment, relates to numerous industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, pipeline.
Conventional pressure transducer has resistance strain type pressure sensor, semiconductor strain formula pressure transducer, piezoresistive pressure sensor, inductance pressure transducer, capacitance pressure transducer, resonance type pressure sensor etc.The change in resistance that resistance strain type pressure sensor produces when stressed is less, causes sensitivity low; Semiconductor strain formula pressure transducer is due to by the impact of the factor such as crystal orientation, impurity, and sensitivity dispersion degree is large, temperature stability difference and under compared with large sstrain effect nonlinearity erron large, bring certain difficulty to use; Piezoresistive pressure sensor realizes based on the piezoresistive effect of highly doped silicon, and the pressure-sensitive device that highly doped silicon is formed has stronger dependence to temperature, and the electric bridge testing circuit be made up of pressure-sensitive device also can cause sensitivity drift because of temperature variation; Inductance pressure transducer, volume ratio is comparatively large, is difficult to realize microminiaturization; The raising of capacitance pressure transducer, precision utilizes increase capacity area to realize, and along with the microminiaturization of device, its precision is difficult to because effective capacitance area reduces improve; Resonance type pressure sensor requires that quality of materials is higher, and processing technology is complicated, and cause the production cycle long, cost is higher, and in addition, its output frequency and measured nonlinear relationship often, need carry out the good precision of linearization process guarantee.
High stress sensor has carried out measurement by the conversion of pick-up unit realizable force electricity, and its sensitivity, resolution are very important.Current high stress sensor is due to microminiaturized and integrated, and make the indexs such as the sensitivity of detection, resolution reach the ultimate limit state of sensitizing range detection, thus limit the further raising of pressure transducer accuracy of detection, be difficult to the needs meeting modern military, civilian equipment.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of the present invention is to provide a kind of MEMS giant magnetic resistance high stress sensor, based on based on giant magnetoresistance effect, the resistance value of huge mistor can produce violent change under faint changes of magnetic field, giant magnetoresistance effect can make the sensitivity of sensor improve 1-2 the order of magnitude, and good temp characteristic, the linearity is good.MEMS giant magnetic resistance high stress sensor is applicable to various occasion, can pass through the processing of MEMS method, have higher sensitivity for precision measurement.
To achieve these goals, the technical solution used in the present invention is:
A kind of MEMS giant magnetic resistance high stress sensor, comprising:
Bonding substrate 1;
Ferromagnetic thin film supporting body 10, be arranged on above bonding substrate 1, top is divided into elastic film 4, and bottom is divided into pad framework 2, and pad framework 2 surrounding is connected with bonding substrate 1;
Ferromagnetic thin film 3, is arranged on the center of elastic film 4 lower surface of ferromagnetic thin film supporting body 10;
Huge mistor 7, is arranged on bonding substrate 1 upper surface center, just right with the position of ferromagnetic thin film 3;
Protective cover 5, is fixed on the top of ferromagnetic thin film supporting body 10, and the centre of protective cover 5 upper surface arranges the inner chamber 23 of connective protection cover 5 and the contact hole 6 of extraneous through hole shape.
Preferably, the length of the X-direction of described ferromagnetic thin film supporting body 10 is less than the length of the X-direction of bonding substrate 1, and bonding substrate phase 1 has an elongated area for ferromagnetic thin film supporting body 10.
Preferably, the thickness of the central area of described elastic film 4 is greater than the thickness of neighboring area, and the surrounding of elastic film 4 is stressed easily bending, and the rigidity of central area is relatively large, remain unchanged shape, can only translation.Ferromagnetic thin film 3 is arranged on the lower surface of elastic film 4 central area, for huge mistor 7 provides stable non-uniform magnetic-field.Described pad framework 2 is hollow frame structure, and pad framework 2 is connected with bonding substrate 1 below, and cover elastic film 4 above, three forms the vacuum chamber 24 of " recessed " font.
Preferably, described ferromagnetic thin film 3 is arranged on the lower surface of elastic film 4 by sputtering method or molecular beam epitaxy, and described huge mistor 7 is arranged on the upper surface of bonding substrate 1 by sputtering method or molecular beam epitaxy.
Preferably, described ferromagnetic thin film 3 is sandwich construction, can be followed successively by from top to bottom: silicon dioxide layer 11, titanium dioxide layer 12, platinum layer 13, cobalt ferrite layer 14, bismuth ferrite layer 15.
Preferably, described huge mistor 7 is connected with huge mistor electrode 9 by huge mistor extension line 8, and huge mistor electrode 9 is arranged on the upper surface of the elongated area of bonding substrate 1.
Preferably, described huge mistor 7 is sandwich construction, is followed successively by tantalum layer 16, ferrimanganic layer 17, cobalt layers 18, layers of copper 19, nifesphere 20, lower tantalum layer 21 and insulation course 22 from top to bottom.
In the present invention, acted on the elastic film 4 of ferromagnetic thin film supporting body 10 by measuring pressure by the contact hole 6 on protective cover 5, when there is pressure reduction with ambient pressure in vacuum chamber 24, Z-direction will be there is and bend in the neighboring area of elastic film 4, and the central area rigidity of elastic film 4 is relatively large, remain unchanged shape, can only in Z-direction translation, cause the ferromagnetic thin film 3 being arranged on its central area lower surface that Z-direction occurs to move, there is faint change in the magnetic field that ferromagnetic thin film 3 produces, according to giant magnetoresistance effect, acute variation can be there is in the resistance of huge mistor 7 under Weak magentic-field change, resistance change impact outputs to the curtage change of external circuit, realize by the measurement of measuring pressure.
The present invention has obvious advance compared with technical background, and this huge magnetic-type high stress sensor can be integrated on one piece of silicon chip with instruments such as huge magnetic acceleration, angular velocity, gyroscopes easily, decreases production cost.
In the present invention, because the resistance of giant magnetoresistance acute variation can occur under faint changes of magnetic field, the sensitivity of MEMS giant magnetic resistance height sensor can be improved 1-2 the order of magnitude by this change, and therefore MEMS huge magnetic-type high stress sensor all can have obvious response for the pressure of subtle change.
Accompanying drawing explanation
Fig. 1 is the integrally-built stereographic map of inventive embodiments.
Fig. 2 is the vertical view of inventive embodiments.
Fig. 3 is the integrally-built sectional view of inventive embodiments.
Fig. 4 is the presser sensor schematic diagram of inventive embodiments.
Fig. 5 is the huge mistor of inventive embodiments and the plane structure chart of bonding baseplate assembly.
Fig. 6 is the ferromagnetic thin film structural drawing of inventive embodiments.
Fig. 7 is the huge mistor structural drawing of inventive embodiments.
Embodiment
Be described in further details the present invention below in conjunction with drawings and Examples, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar original paper or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In the present invention, it should be explained that, orientation or the position relationship of the instruction such as term " " center ", " on ", D score, "front", "rear", "left", "right" be based on orientation shown in the drawings or position relationship; be only for convenience of description with simplified characterization the present invention; instead of instruction or imply the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In the present invention, it should be noted that, unless otherwise clearly defined and limited, term " is connected ", " connection " should be interpreted broadly, such as: can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be direct connection, also can be indirectly be connected by intermediary, can be the connection of two element internals.For those of ordinary skill in the art, concrete condition above-mentioned term concrete meaning in the present invention can be understood.
Giant magnetoresistance effect, refers to the resistivity of magnetic material when there being external magnetic field than without the phenomenon that there is great variety during external magnetic field.Giant magnetoresistance effect is a kind of quantum mechanics and condensed state physics phenomenon, can observe in the film layer structure that magnetic material is alternate with nonmagnetic substance.This structure is formed by stacking by ferromagnetic material and nonferromagnetic material interlaminate, the resistance value of material is relevant with the direction of magnetization of ferrimagnet thin layer, when the magnetic moment of ferromagnetic layer is parallel to each other, the scattering of charge carrier and spin dependence is minimum, material has minimum resistance, when the magnetic moment of ferromagnetic layer is antiparallel, the strongest with the scattering of spin dependence, the resistance of material is maximum, therefore resistance has very large variable quantity under very weak externally-applied magnetic field.
Below in conjunction with accompanying drawing, structural principle of the present invention, principle of work are described in more detail.
As shown in Figure 1, 2, 3, according to one embodiment of present invention, MEMS huge magnetic-type high stress sensor, comprising: bonding substrate 1, ferromagnetic thin film 3, protective cover 5, huge mistor 7 and ferromagnetic thin film supporting body 10.
Specifically, device with bonding substrate 1 for carrier; Ferromagnetic thin film supporting body 10 is located at the top of bonding substrate 1, for
shape structure, its surrounding is connected with bonding substrate 1, and ferromagnetic thin film supporting body 10 is made up of two parts: top is divided into elastic film 4, and bottom is divided into pad framework 2; Ferromagnetic thin film 3 is arranged on the lower surface in elastic film 4 centre position; Huge mistor 7, as sensing unit, is arranged on the center of bonding substrate 1 upper surface, just right with the position of ferromagnetic thin film 3; Protective cover 5, can make of silicon materials, is connected to the top of ferromagnetic thin film supporting body 10, and the upper surface center of protective cover 5 is provided with the contact hole 6 of through-hole form, is used for communication with cavity 23 and the external world.
In the embodiment of the present invention, the length of the X-direction of described ferromagnetic thin film supporting body 10 is less than the length of the X-direction of bonding substrate 1, the border 25 of ferromagnetic thin film supporting body 10 is positioned at bonding substrate 1 upper surface inside, and bonding substrate 1 has an elongated area relative to ferromagnetic thin film supporting body 10.
In the embodiment of the present invention, the thickness of the central area of described elastic film 4 is greater than the thickness of surrounding, and described huge mistor 7 is positioned at the center of bonding substrate 1.Ferromagnetic thin film 3 is just right with huge mistor 7, and the shape of ferromagnetic thin film 3 and area need situation according to the power of huge mistor 7 pairs of magnetic field intensitys and distribution and determine.
In the embodiment of the present invention, described pad framework 2, be hollow frame structure, its thickness is determined by detecting range.Pad framework 2, is connected with bonding substrate 1 below, covers elastic film 4 above, and three forms the vacuum chamber 24 of " recessed " font.The effect of vacuum chamber 24 has two, and one is: make the external world and vacuum chamber 24 there is pressure reduction, deformation occurs in elastic film 4 pressure difference effect neighboring area, causes the ferromagnetic thin film 3 being arranged on elastic film 4 centre position to produce the displacement of Z-direction; Two are: the movement for ferromagnetic thin film 3 provides a space.
As shown in Figure 4, according to one embodiment of present invention, extraneous gas enters inner chamber 23 by the contact hole 6 on protective cover 5, when there is pressure reduction with ambient pressure in vacuum chamber 24, differential pressure action is on elastic film 4, elastic film 4 surrounding thinner region generation Z-direction is bent, and the central area of elastic film 4 due to rigidity larger, remain unchanged shape, can only in Z-direction translation, the ferromagnetic thin film 3 of its central area lower surface is caused to produce the micro-displacement of a Z-direction accordingly, there is faint change in the magnetic field of causing ferromagnetic thin film 3 to produce, according to giant magnetoresistance effect, acute variation can be there is in the resistance of huge mistor 7 under Weak magentic-field change, thus impact outputs to the curtage change of external circuit, realize by the measurement of measuring pressure.There is violent change in the resistance of huge mistor 7, the sensitivity of pressure transducer can be improved 1-2 the order of magnitude by this change under the faint change in magnetic field.
As shown in Figure 5, according to one embodiment of present invention, huge mistor 7 is
shape, bonding upper surface of base plate 1 is provided with giant magnetoresistance 7, giant magnetoresistance extension line 8, giant magnetoresistance electrode 9.Huge mistor 7 is located at the center of the upper surface of bonding substrate 1, and giant magnetoresistance electrode 9 is located at the upper surface of the elongated area of bonding substrate 1.Giant magnetoresistance 7 is connected with giant magnetoresistance electrode 9 by giant magnetoresistance extension line 8.
As shown in Figure 6, according to one embodiment of present invention, ferromagnetic thin film 3 is sandwich construction.Thus, can better with huge mistor 7 with the use of.Preferably, the upper surface that ferromagnetic thin film layer can comprise elastic film 4 is followed successively by silicon dioxide layer 11, titanium dioxide layer 12, platinum layer 13, cobalt ferrite layer 14 and bismuth ferrite layer 15 downwards.It should be noted that, above-mentioned ferromagnetic thin film 3 can be designed and produced by molecular beam epitaxy, molecular beam epitaxy is a kind of new technology of crystal film of growing high-quality on the semiconductor wafer, under vacuum, grow on elastic film layer by layer by crystal structure arrangement, and form nano thick film, successively deposit, in deposition process, need the strict quality, the thickness that control film forming, with the accuracy of detection of the quality and thickness effect pressure transducer of avoiding film forming and sensitivity.
As shown in Figure 7, according to one embodiment of present invention, huge mistor 7 comprises insulation course 22, tantalum layer 21, nifesphere 20, layers of copper 19, cobalt layers 18, ferrimanganic layer 17 and the tantalum layer 16 that bonding substrate 1 is upwards arranged successively.It should be noted that, above-mentioned huge mistor 7 can be designed and produced by molecular beam epitaxy, molecular beam epitaxy is a kind of crystal film of growing high-quality on the semiconductor wafer, under vacuum, by crystal structure arrangement growth in layer on the upper surface of bonding substrate 1, and nano thick film is formed, successively deposit, in deposition process, need the strict quality, the thickness that control film forming, with the accuracy of detection of the quality and thickness effect pressure transducer of avoiding film forming and sensitivity.
Principle of work of the present invention is:
Acted on elastic film 4 by measuring pressure by the contact hole 6 on protective cover 5, when there is pressure reduction with ambient pressure in vacuum chamber 24, differential pressure action is on elastic film 4, elastic film 4 surrounding thinner region generation Z-direction is bent, and the central area of elastic film 4 due to rigidity larger, remain unchanged shape, can only in Z-direction translation, cause the ferromagnetic thin film 3 of its central area lower surface that the micro-displacement of a Z-direction occurs accordingly, there is faint change in the magnetic field of causing ferromagnetic thin film 3 to produce, according to giant magnetoresistance effect, acute variation can be there is in the resistance of huge mistor 7 under Weak magentic-field change, thus impact outputs to the curtage change of external circuit, realize by the measurement of measuring pressure.Owing to there being certain relation between height above sea level and pressure, just sea level elevation can be obtained by the pressure recorded.
In the description of this instructions, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that, can carry out various change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is had the right requirement and equivalents thereof.
Claims (7)
1. a MEMS giant magnetic resistance high stress sensor, is characterized in that, comprising:
Bonding substrate (1);
Ferromagnetic thin film supporting body (10), be arranged on bonding substrate (1) top, top is divided into elastic film (4), and bottom is divided into pad framework (2), and pad framework (2) surrounding is connected with bonding substrate (1);
Ferromagnetic thin film (3), is arranged on the center of elastic film (4) lower surface of ferromagnetic thin film supporting body (10);
Huge mistor (7), is arranged on bonding substrate (1) upper surface center, just right with the position of ferromagnetic thin film (3);
Protective cover (5), be fixed on the top of ferromagnetic thin film supporting body (10), the centre of protective cover (5) upper surface arranges the inner chamber (23) of connective protection cover (5) and the contact hole (6) of extraneous through hole shape;
Described ferromagnetic thin film (3) is sandwich construction;
Described huge mistor (7) is connected with huge mistor electrode (9) by huge mistor extension line (8).
2. MEMS giant magnetic resistance high stress sensor according to claim 1, its characteristic is, the thickness of described elastic film (4) central area is greater than the thickness of surrounding.
3. MEMS giant magnetic resistance high stress sensor according to claim 2, it is characterized in that, described pad framework (2) is hollow frame structure, pad framework (2) is connected with bonding substrate (1) below, cover elastic film (4) above, three forms the vacuum chamber (24) of " recessed " font.
4. MEMS giant magnetic resistance high stress sensor according to claim 1, it is characterized in that, described sandwich construction is followed successively by from top to bottom: silicon dioxide layer (11), titanium dioxide layer (12), platinum layer (13), cobalt ferrite layer (14), bismuth ferrite layer (15).
5. MEMS giant magnetic resistance high stress sensor according to claim 1, its characteristic is, the length of the X-direction of described ferromagnetic thin film supporting body (10) is less than the length of the X-direction of bonding substrate (1), and bonding substrate phase (1) has an elongated area for ferromagnetic thin film supporting body (10).
6. MEMS giant magnetic resistance high stress sensor according to claim 5, is characterized in that, described huge mistor electrode (9) is arranged on the upper surface of the elongated area of bonding substrate (1).
7. MEMS giant magnetic resistance high stress sensor according to claim 1, it is characterized in that, described huge mistor (7) is sandwich construction, is followed successively by tantalum layer (16), ferrimanganic layer (17), cobalt layers (18), layers of copper (19), nifesphere (20), lower tantalum layer (21) and insulation course (22) from top to bottom.
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104089737B (en) * | 2014-06-25 | 2015-08-05 | 西安交通大学 | A kind of high sensitivity laminated type flexure electric pressure sensor |
| CN104655242B (en) * | 2014-11-05 | 2018-01-02 | 河南工业大学 | A kind of silo bottom surface pressure detection method and its pressure sensor of use |
| CN104697677B (en) * | 2015-03-09 | 2017-10-03 | 中国科学院宁波材料技术与工程研究所 | A kind of piezomagnetic strain gauge |
| CN105181185A (en) * | 2015-08-25 | 2015-12-23 | 中山大学 | Flexible conductive pressure sensor and manufacturing method therefor |
| CN109186818B (en) * | 2018-07-23 | 2020-11-27 | 天津大学 | Non-contact non-invasive pressure measurement method for pressure container |
| CN109275080B (en) * | 2018-08-06 | 2020-07-24 | 歌尔股份有限公司 | Sensor |
| CN112345624A (en) * | 2020-10-27 | 2021-02-09 | 北京信息科技大学 | High-sensitivity metal wear particle detection sensor based on giant magnetoresistance effect |
| CN116539196B (en) * | 2023-06-25 | 2024-01-19 | 南京高华科技股份有限公司 | MEMS piezoresistive pressure sensor and preparation method thereof |
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| TW478060B (en) * | 1999-07-20 | 2002-03-01 | Fidelica Microsystems Inc | Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same |
| CN102706338A (en) * | 2012-06-19 | 2012-10-03 | 清华大学 | Giant magnetoresistive effect-based micro mechanical gyro |
| CN202853817U (en) * | 2012-10-22 | 2013-04-03 | 清华大学 | MEMS tunnel magnetic resistance height pressure transducer |
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| DE102005047413B8 (en) * | 2005-02-23 | 2012-06-06 | Infineon Technologies Ag | A magnetic field sensor element and method for performing an on-wafer function test, and methods of fabricating magnetic field sensor elements and methods of fabricating magnetic field sensor elements having an on-wafer function test |
| US7750627B2 (en) * | 2006-10-24 | 2010-07-06 | Headway Technologies, Inc. | Magnetic film sensor having a magnetic film for generating a magnetostriction and a depressed insulating layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW478060B (en) * | 1999-07-20 | 2002-03-01 | Fidelica Microsystems Inc | Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same |
| CN102706338A (en) * | 2012-06-19 | 2012-10-03 | 清华大学 | Giant magnetoresistive effect-based micro mechanical gyro |
| CN202853817U (en) * | 2012-10-22 | 2013-04-03 | 清华大学 | MEMS tunnel magnetic resistance height pressure transducer |
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