CN103364585A - Novel micro-accelerometer based on mesoscopic piezoresistive effect - Google Patents
Novel micro-accelerometer based on mesoscopic piezoresistive effect Download PDFInfo
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- CN103364585A CN103364585A CN2013103055270A CN201310305527A CN103364585A CN 103364585 A CN103364585 A CN 103364585A CN 2013103055270 A CN2013103055270 A CN 2013103055270A CN 201310305527 A CN201310305527 A CN 201310305527A CN 103364585 A CN103364585 A CN 103364585A
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Abstract
A novel micro-accelerometer based on the mesoscopic piezoresistive effect is mainly and structurally composed of a bonding substrate, a sensitive mass block, a supporting frame body, resonant tunneling devices and combined beams. Each resonant tunneling deice is composed of a resonant tunneling material thin film layer, a resonant tunneling device positive pole and a resonant tunneling device negative pole. Each combined beam is composed of a detection beam, a connection block and a transverse buffering beam. The bonding substrate serves as a carrier, the supporting frame body is bonded on the bonding substrate, the center position of each of the four edges of the supporting frame body is connected with one combined beam, one combined beam is connected to the center position of each of the four edges of the sensitive mass block, the other sides of the combined beams are connected with the supporting frame body, and each combined beam is composed of the detection beam, the connection block and the transverse buffering beam. Each resonant tunneling material thin film layer is of a multi-potential-barrier voltage-sensitive structure and can enable the sensitivity of a silicon piezoresistive device to be improved by 1-2 orders of magnitude. The novel micro-accelerometer based on the mesoscopic piezoresistive effect is reasonable and compact in structure, convenient to detect, high in precision, good in reliability and suitable for miniaturization, and has strong lateral resistance.
Description
Technical field
The present invention relates to micro-inertial navigation Primary Component research field, in particular to a kind of micro-acceleration gauge based on resonance tunneling effect with anti-horizontal interference.
Background technology
Micro-mechanical accelerometer is but that a kind of volume is little, the accelerometer of mass production low in energy consumption, that it is widely used in is military, the test of acceleration, vibration, overload signal in the civil area, in addition, it also is one of Primary Component of space motion object attitude measurement and control, is subject to the great attention of aerospace field always.
The tradition micro-acceleration gauge can be divided into by responsive principle: condenser type, pressure resistance type, tunnel effect type, piezoelectric type etc.Wherein front two kinds of common characteristics are: its sensitivity improves and all depends on reducing of the rigidity of structure, and high sensitivity is accompanied by small-range, low overload, and capacitive in miniaturized application also than being easier to occur the problems such as adhesive and puncture.In addition, along with reducing of size sensor, its effective sensitizing range also reduces thereupon, and the indexs such as its sensitivity and resolution also obviously reduce, and has reached or near the limit of its sensitive perception, thereby has limited the further raising of detection sensitivity.Piezoelectric effect is received the sensitivity of sensor and is easily drifted about, and needs often to proofread and correct, and makes zero slow unsuitable follow-on test.Tunnel effect is received sensor, and manufacturing process is complicated, is subjected to principle restriction range less, and testing circuit also relative difficult realizes, yield rate is low, is unfavorable for integrated.All deficiencies of traditional detection mode, the micro-acceleration gauge of restriction are difficult to satisfy the needs of modern military, civilian equipment to microminaturization, the future development such as integrated.
Resonant tunneling device just progressively is applied to sensor field, and its core texture is that superlattice nanoscale wide bandgap material is being mingled with superlattice nanoscale low bandgap material, and embodying a concentrated reflection of is situated between sees on the piezoresistive effect.The sensitive mechanism of seeing piezoresistive effect that is situated between is: under the mechanical signal effect, the strain in the multi-layer nano membrane structure changes; Strain can cause the generation of structure built in field under the certain condition; Built in field will cause that quantum level changes in the nanobelt structure; The quantum level variation can cause that resonant tunnel current changes.In brief, resonant tunneling device can by above-mentioned four physical processes, be converted into a stronger electrical signal with a faint mechanical signal.Resonant tunneling device based on multi-layer nano-film is that its quantum well does not mix with molecular beam epitaxy and vapor deposition of metal fabrication techniques, so can not change because temperature variation produces carrier concentration in it.Jie of resonant tunneling device being seen piezoresistive effect be applied to micro-acceleration gauge and detect, be conducive to the raising of micro-acceleration gauge sensitivity, is the science and technology in present forward position, is the technical field that world technology circle is inquired into.
Summary of the invention
The present invention is intended to solve at least one of technical matters that exists in the prior art.
In view of this, the present invention need to provide micro-mechanical accelerometer, this micro-mechanical accelerometer is the micro-mechanical accelerometer based on resonance tunneling effect, can improve the accuracy of detection of micro-mechanical accelerometer, be conducive to a certain extent reduce even eliminate transverse acceleration to the interference that the detection side makes progress, make detect data more precisely, reliable.
According to the micro-mechanical accelerometer of the embodiment of the invention, adopt overall construction design, reasonable in design is fit to the microminiaturization of device.The detection beam root of combination beam is provided with resonant tunneling device, and resonant tunneling device is seen four physical processes of piezoresistive effect by being situated between, a faint mechanical signal can be converted into a stronger electrical signal, is conducive to the lifting of micro-acceleration gauge detection sensitivity.Micro-acceleration gauge has adopted inflection shape Orthogonal Composite beam at Design of Cantilever Beam, is conducive to little gyro and reduces laterally interference, and these characteristics all will effectively promote the raising of micro-acceleration gauge accuracy of detection.Except above characteristics, the measurement circuit design of this micro-acceleration gauge is simple, easy to use, good reliability, is fit to microminiaturized.
According to one embodiment of present invention, described bonding substrate is square structure, and the center of bonding upper surface of base plate is provided with the kerve for the motion of sensitive-mass piece.
According to one embodiment of present invention, described acceleration sensitive body is located at the top of bonding substrate, and firm with the bonding substrate bonding.And the acceleration sensitive body comprises: sensitive-mass piece, correspondence are located at bonding substrate kerve top; Combination beam is used for connecting sensitive-mass piece and support frame; Support frame is connected with the sensitive-mass piece by combination beam, and the sensitive-mass piece is played a supporting role; And resonant tunneling device, as the sensing unit of micro-acceleration gauge, be located at the detection beam root of combination beam.
According to one embodiment of present invention, described micro-acceleration gauge further comprises: sensitive-mass piece, correspondence are located at the top of bonding substrate kerve; Support frame is connected with the sensitive-mass piece by semi-girder, and the sensitive-mass piece is played a supporting role.
According to one embodiment of present invention, described sensitive-mass piece is square, and is embedded in the kerve on the bonding substrate, and about can be in this kerve, all around motion; Center, described sensitive-mass piece four limit couples together by combination beam and support frame.
According to one embodiment of present invention, described combination beam is quadrature inflection shape structure, with sensitive-mass piece and support frame be an one-piece construction; Combination beam further comprises: detect beam, contiguous block, horizontal pilot beam, the two ends of contiguous block are connected to the end of horizontal pilot beam.Detect beam width much larger than thickness, guarantee that its above-below direction rigidity is much smaller than horizontal direction; Laterally the thickness of pilot beam guarantees that much larger than width above-below direction rigidity is much larger than horizontal direction.
According to one embodiment of present invention, described resonant tunneling device, to make insulation course at substrate layer first, then make the resonance tunnel-through material film layer with the sight piezoresistive effect that is situated between on the insulation course, the two ends of resonance tunnel-through material film layer are connected with respectively resonant tunneling device positive pole, resonant tunneling device negative pole.Resonant tunneling device finally is connected with external circuit by resonant tunneling device lead-in wire electrode.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Fig. 1 is the one-piece construction stereographic map of the embodiment of the invention;
Fig. 2 is the one-piece construction planimetric map of the embodiment of the invention;
Fig. 3 is the bonding substrate three-dimensional structure diagram of the embodiment of the invention;
Fig. 4 is the sensitive-mass piece three-dimensional structure diagram of the embodiment of the invention;
Fig. 5 is the combination beam three-dimensional structure diagram of the embodiment of the invention;
Fig. 6 is the structural drawing of the resonant tunneling device of the embodiment of the invention;
Fig. 7 is the resonant tunneling device detailed structure view of the embodiment of the invention;
Shown in the figure, list of numerals is as follows:
1, bonding substrate, 2, the sensitive-mass piece, 3, support frame, 4, combination beam, 5, resonant tunneling device, 6, kerve, 7, detect beam, 8, contiguous block, 9, horizontal pilot beam, 10, substrate layer, 11, insulation course, 12, resonance tunnel-through material film layer, 13, resonant tunneling device is anodal, and 14, the resonant tunneling device negative pole, 15, resonant tunneling device lead-in wire electrode, 16, collector table top, 17, emitter mesa, 18, metal electrode layer, 19, air bridges, 20, air bridges, 21 metal electrode layers.
Embodiment
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, orientation or the position relationship of the indications such as term " " center ", " on ", D score, 'fornt', 'back', " left side ", " right side " be based on orientation shown in the drawings or position relationship; only be for convenience of description the present invention and simplified characterization; rather than the device of indication or hint indication or element must have specific orientation, with specific orientation structure and operation, so can not be interpreted as limitation of the present invention.
In description of the invention, need to prove, unless clear and definite regulation and restriction are arranged in addition, term " links to each other ", " connection " should do broad understanding, for example, can be to be fixedly connected with, and also can be to removably connect, or connects integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can indirectly link to each other by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
But adopt higher Jie of sensitivity to see piezoresistive effect as the sensitivity of responsive principle Effective Raise micro-acceleration gauge on the micro-acceleration gauge principle.Micro-acceleration gauge has adopted square mass and inflection shape orthogonal beams members in the design of structure, this structure except can be well to the detection side to acceleration carry out the sensitivity, also can detect isolation to the acceleration from other directions, effectively resisted horizontal interference, be of great significance for the accuracy of detection tool that improves accelerometer.
The present invention will be further described below in conjunction with accompanying drawing: as shown in Figure 1, 2, according to one embodiment of present invention, micro-acceleration gauge is take bonding substrate 1 as carrier, firmly bonding has support frame 3 on frame around the bonding substrate 1, the center position on support frame 3 inboard four limits is connected in detection beam 7 one ends of combination beam 4, detecting beam 7 other ends links to each other with contiguous block 8, and be connected in the four corners position of sensitive-mass piece 2 by horizontal slow beam 9, be manufactured with resonant tunneling device 5 at the detection beam root of combination beam.
As shown in Figure 3, according to one embodiment of present invention, bonding substrate 1 is square, and the upper surface central area is processed with kerve 6.The surrounding width of frame of bonding substrate 1 equates with the width of support frame 3, the move distance that the degree of depth of kerve 6 is looked sensitive-mass piece 2 determines, sensitive-mass piece 2 can be in by the coffin that forms of the central square zone of support frame 3 and kerve 6 about, all around motion.
As shown in Figure 4, according to one embodiment of present invention, be the structural drawing of sensitive-mass piece, sensitive-mass piece 2 is overlooked and is square, and central area, four limits links to each other with support frame 3 by the combination beam 4 of orthogonal thereto shape inflection beam, and the back side is truncated rectangular pyramids shape.
As shown in Figure 5, according to one embodiment of present invention, be combination beam 4 three-dimensional structure diagrams, the end of detecting beam 7 and horizontal pilot beam 9 is connected in a side of contiguous block 8 jointly, and detects beam 7 in the centre, and two horizontal pilot beams 9 are distributed in both sides.Laterally the other end of pilot beam 9 is connected to sensitive-mass piece 2.
Detect the thickness of beam 7 with respect to the thinner thickness of contiguous block 8, that detects namely that beam can be sensitive experiences inertial force on the Z-direction, laterally the thickness of pilot beam 9 equates with the thickness of contiguous block 8, but laterally pilot beam 9 width are narrow than thickness, be that horizontal pilot beam 9 can will be much larger than it in Z-direction at the susceptibility of X-axis, Y direction, namely laterally pilot beam is insensitive in Z-direction.
As shown in Figure 6, according to one embodiment of present invention, structural drawing for resonant tunneling device, the resonant tunneling device structure is identical, be provided with insulation course 11 in layer-of-substrate silicon 10, be provided with resonance tunnel-through material film layer 12 at insulation course 11, the two ends of resonance tunnel-through material film layer 12 are connected with respectively resonant tunneling device positive pole 13, resonant tunneling device negative pole 14.
As shown in Figure 7, according to one embodiment of present invention, substrate layer 10 can be semi-conducting material manufacturing, be cuboid, on a left side, the right side is symmetrical arranged insulation course 11, the centre arranges collector table top 16, emitter mesa 17, be provided with resonant tunneling device positive pole 13 at insulation course 11, the bottom, centre position of resonant tunneling device positive pole 13 is air bridges 19, be multilayer tunneling device material nano film 12 at collector table top 16, metal electrode layer 18 is established on multilayer tunneling device material nano film 12 tops, metal electrode layer 17 links to each other with resonant tunneling device anodal 13 by air bridges 20, and emitter mesa 17 is provided with metal electrode layer 21, and metal electrode layer 21 links to each other with resonant tunneling device negative pole 14 by air bridges 19, the bottom in the centre position of resonant tunneling device negative pole 14 is air bridges 20, multilayer tunneling device material nano film 12 is comprised of multi-layer nano-film, and each rete forms by arsenide, and its thicknesses of layers differs, be nanoscale, do not wait from 0.5-3000nm; Insulation course 11 can prevent substrate 12 and electrode conduction: air bridges 19, the 20th, and in order to reduce stray capacitance.
The multilayer tunneling device material nano film 12 usefulness molecular beam epitaxial devices of resonant tunneling device are made, molecular beam epitaxy is a kind of high-quality crystal film of growing at crystal substrates, under vacuum condition, by crystal arrangement being grown on the substrate from level to level, and formation nano thick film, successively its film quality, thickness will strictly be made and control to accumulation, otherwise will affect precision and the sensitivity of gyroscope pick-up unit.
When accelerometer when Z-direction has acceleration, the sensitive-mass piece can depart from the equilibrium position under inertia effect, vibrate along Z-direction.Thereby drive the detection beam generation deformation of combination beam, the deformation that detects beam causes the resonant tunneling device generation deformation made from its root, Jie who has according to resonant tunneling device sees piezoresistive effect, and small deformation causes the resistance change that resonant tunneling device is larger.So just faint acceleration signal can be converted into a stronger electrical signal, by just obtaining corresponding accekeration to the detection of this resistance change and through converting.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that, in the situation that do not break away from principle of the present invention and aim can be carried out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
For this invention, give prominence to structurally and former patent applied for difference.
Claims (6)
1. the sight piezoresistive effect micro-acceleration gauge that is situated between is characterized in that, comprising:
The bonding substrate is made the kerve that promising sensitive-mass piece provides space on the bonding substrate;
The acceleration sensitive body, described acceleration sensitive body is located at the top of bonding substrate, and firm with the bonding substrate bonding, and the acceleration sensitive body comprises:
Sensitive-mass piece, correspondence are located at bonding substrate kerve top;
Combination beam is used for connecting sensitive-mass piece and support frame;
Support frame is connected with the sensitive-mass piece by combination beam, and the sensitive-mass piece is played a supporting role;
Resonant tunneling device as the sensing unit of micro-acceleration gauge, is located at the detection beam root of combination beam.
2. micro-acceleration gauge according to claim 1 is characterized in that: be manufactured with kerve on the described bonding substrate, the sensitive-mass piece can top to bottom, left and right, front and rear motion in kerve.
3. micro-acceleration gauge according to claim 1 is characterized in that: described sensitive-mass piece, be square, and center, four limits is connected with support frame by combination beam.
4. micro-acceleration gauge according to claim 1, it is characterized in that: described combination beam is comprised of detection beam, contiguous block, horizontal pilot beam three parts, and the combination beam of quadrature inflection shape is conducive to reduce horizontal interference, and the detection beam root of combination beam is provided with resonant tunneling device.
5. micro-acceleration gauge according to claim 1, it is characterized in that: described support frame is a square hollow framework, by combination beam the sensitive-mass piece is played a supporting role.
6. micro-acceleration gauge according to claim 1, it is characterized in that: described resonant tunneling device, to make insulation course at substrate layer, then make the resonance tunnel-through material film layer with the sight piezoresistive effect that is situated between on the insulation course, the two ends of resonance tunnel-through material film layer are connected with respectively resonant tunneling device positive pole, resonant tunneling device negative pole; Resonant tunneling device is connected with external circuit by resonant tunneling device lead-in wire electrode.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575932A (en) * | 2013-11-20 | 2014-02-12 | 大连理工大学 | MEMS piezoresistive accelerometer |
| CN103969467A (en) * | 2014-01-22 | 2014-08-06 | 东南大学 | Piezoresistive type high overload microelectromechanical system (MEMS) accelerometer |
| CN105353166A (en) * | 2015-11-24 | 2016-02-24 | 西安交通大学 | Low lateral effect micro piezoelectric acceleration sensor chip, and manufacturing method of the same |
| CN107131819A (en) * | 2017-06-12 | 2017-09-05 | 中北大学 | Single shaft micromechanics displacement transducer based on tunnel magneto-resistance effect |
| CN107421525A (en) * | 2017-08-15 | 2017-12-01 | 中北大学 | A kind of tunnel magnetoresistive disresonance type 3 axis MEMS gyro |
| CN107449423A (en) * | 2017-08-28 | 2017-12-08 | 中北大学 | The used group device of the centrifugal 3 axis MEMS of nanometer grating |
| CN107449411A (en) * | 2017-08-28 | 2017-12-08 | 中北大学 | Nanometer grating disresonance type tri-axis angular rate sensor |
| CN107462235A (en) * | 2017-08-28 | 2017-12-12 | 中北大学 | Centrifugal tri-axis angular rate sensor based on Moire fringe detection |
| CN107727885A (en) * | 2017-11-13 | 2018-02-23 | 中北大学 | The pressure resistance type three axis accelerometer of height output stability |
| CN110068318A (en) * | 2019-04-19 | 2019-07-30 | 中北大学 | A kind of tunnel magnetoresistive microthrust test device based on snakelike hot-wire coil |
| CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
| CN113466491A (en) * | 2021-07-01 | 2021-10-01 | 兰州空间技术物理研究所 | Sensitive structure of satellite accelerometer |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575932A (en) * | 2013-11-20 | 2014-02-12 | 大连理工大学 | MEMS piezoresistive accelerometer |
| CN103969467A (en) * | 2014-01-22 | 2014-08-06 | 东南大学 | Piezoresistive type high overload microelectromechanical system (MEMS) accelerometer |
| CN103969467B (en) * | 2014-01-22 | 2016-10-26 | 东南大学 | A kind of pressure resistance type MEMS high overload accelerometer |
| CN105353166A (en) * | 2015-11-24 | 2016-02-24 | 西安交通大学 | Low lateral effect micro piezoelectric acceleration sensor chip, and manufacturing method of the same |
| CN107131819B (en) * | 2017-06-12 | 2023-02-24 | 中北大学 | Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect |
| CN107131819A (en) * | 2017-06-12 | 2017-09-05 | 中北大学 | Single shaft micromechanics displacement transducer based on tunnel magneto-resistance effect |
| CN107421525A (en) * | 2017-08-15 | 2017-12-01 | 中北大学 | A kind of tunnel magnetoresistive disresonance type 3 axis MEMS gyro |
| CN107449423A (en) * | 2017-08-28 | 2017-12-08 | 中北大学 | The used group device of the centrifugal 3 axis MEMS of nanometer grating |
| CN107462235A (en) * | 2017-08-28 | 2017-12-12 | 中北大学 | Centrifugal tri-axis angular rate sensor based on Moire fringe detection |
| CN107449411A (en) * | 2017-08-28 | 2017-12-08 | 中北大学 | Nanometer grating disresonance type tri-axis angular rate sensor |
| CN107727885A (en) * | 2017-11-13 | 2018-02-23 | 中北大学 | The pressure resistance type three axis accelerometer of height output stability |
| CN110068318A (en) * | 2019-04-19 | 2019-07-30 | 中北大学 | A kind of tunnel magnetoresistive microthrust test device based on snakelike hot-wire coil |
| CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
| CN113466491A (en) * | 2021-07-01 | 2021-10-01 | 兰州空间技术物理研究所 | Sensitive structure of satellite accelerometer |
| CN113466491B (en) * | 2021-07-01 | 2023-12-05 | 兰州空间技术物理研究所 | Satellite accelerometer sensitive structure |
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Application publication date: 20131023 |