CN202853817U - MEMS tunnel magnetic resistance height pressure transducer - Google Patents
MEMS tunnel magnetic resistance height pressure transducer Download PDFInfo
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- CN202853817U CN202853817U CN 201220541804 CN201220541804U CN202853817U CN 202853817 U CN202853817 U CN 202853817U CN 201220541804 CN201220541804 CN 201220541804 CN 201220541804 U CN201220541804 U CN 201220541804U CN 202853817 U CN202853817 U CN 202853817U
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Abstract
The utility model relates to an MEMS tunnel magnetic resistance height pressure transducer. The MEMS tunnel magnetic resistance height pressure transducer comprises a bonding substrate, an iron magnetic film supporting body arranged above the bonding substrate, an iron magnetic film arranged at a central position of a lower surface of an elastic film of the iron magnetic film supporting body, a tunnel magneto-sensitive resistor arranged at a central position of an upper surface of the bonding substrate and is opposite to the iron magnetic film and a protective cover fixed above the iron magnetic film supporting body, wherein a center of an upper surface of the protective cover is provided with a contact hole for communicating an internal chamber of the protective cover with an external part. Pressure to be measured is exerted on a silicon elasticity film of the iron magnetic film supporting body through the contact hole and makes the silicon elasticity film generate Z-direction bending, so the iron magnetic film is driven to do Z-direction motion to lead weak change of a magnetic field generated by the iron magnetic film, and violent change of the tunnel magneto-sensitive resistor is caused, and resistance value change causes output current change or output voltage change in an external circuit, and thereby measurement of the pressure to be measured is realized, and an altitude and the pressure have certain relations, so the altitude can be obtained through the measured pressure.
Description
Technical field
The invention belongs to the application of surveying instrument instrument, relate to a kind of MEMS tunnel magnetoresistive height pressure transducer.
Background technology
Pressure transducer is a kind of sensor the most frequently used in the industrial practice, it is widely used in various industrial automatic control environment, relates to numerous industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, pipeline.
Pressure transducer commonly used has resistance strain type pressure sensor, semiconductor strain formula pressure transducer, piezoresistive pressure sensor, inductance pressure transducer, capacitance pressure transducer,, resonance type pressure sensor etc.The change in resistance that resistance strain type pressure sensor produces when stressed is less, causes sensitivity low; Semiconductor strain formula pressure transducer is owing to be subjected to the impact of the factors such as crystal orientation, impurity, and the sensitivity dispersion degree is large, temperature stability poor and under larger effects of strain nonlinearity erron large, bring certain difficulty to use; Piezoresistive pressure sensor is based on highly doped silicon piezoresistive effects and realizes, the pressure-sensitive device that highly doped silicon forms has stronger dependence to temperature, and the electric bridge testing circuit that is comprised of pressure-sensitive device also can cause sensitivity drift because of temperature variation; Inductance pressure transducer, volume ratio is larger, is difficult to realize microminiaturized; The raising of capacitance pressure transducer, precision utilization increases capacity area realizes, along with the microminiaturization of device, its precision reduces to be difficult to improve because of effective capacitance area; Resonance type pressure sensor requires quality of materials higher, and processing technology is complicated, causes the production cycle long, and cost is higher, and in addition, its output frequency and measured often nonlinear relationship need be carried out the good precision of linearization process guarantee.
The height pressure transducer is changed by pick-up unit realizable force electricity and is finished measurement, and its sensitivity, resolution are very important.Present height pressure transducer is because microminiaturized and integrated, and the indexs such as sensitivity, resolution that make detection have reached the ultimate limit state that the sensitizing range is detected, thereby limited the further raising of pressure transducer accuracy of detection, be difficult to satisfy the needs of modern military, civilian equipment.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of the present invention is to provide a kind of MEMS tunnel magnetoresistive height pressure transducer, based on tunnel magneto-resistance effect, mistor resistance value under faint changes of magnetic field in tunnel can produce violent variation, rate of change reaches 200% under the normal temperature, and is higher 2 more than the order of magnitude than the rate of change of silicon piezoresistive effect, and good temp characteristic, the linearity is high, good reproducibility.MEMS tunnel magnetoresistive height pressure transducer is applicable to various occasions, can pass through the processing of MEMS method, has higher sensitivity to be used for precision measurement.
To achieve these goals, the technical solution used in the present invention is:
A kind of MEMS tunnel magnetoresistive height pressure transducer comprises:
Ferromagnetic thin film supporting body 10 is arranged on bonding substrate 1 top, and top is divided into elastic film 4, and the bottom is divided into pad framework 2, is connected with bonding substrate 1 around the pad framework 2;
Ferromagnetic thin film 3 is arranged on the center of elastic film 4 lower surfaces of ferromagnetic thin film supporting body 10;
Preferably, the length of the directions X of described ferromagnetic thin film supporting body 10 is less than the length of the directions X of bonding substrate 1, and bonding substrate 1 has an elongated area with respect to ferromagnetic thin film supporting body 10.
Preferably, the thickness of the central area of described elastic film 4 is greater than the thickness of neighboring area, so that being stressed all around of elastic film 4 is crooked easily, and the rigidity of central area is relatively large, and the shape that remains unchanged can only translation.Ferromagnetic thin film 3 is arranged on the lower surface of elastic film 4 central areas, for tunnel mistor 7 provides stable non-uniform magnetic-field.Described pad framework 2 is the hollow frame structure, links to each other with bonding substrate 1 below the pad framework 2, and the above covers elastic film 4, and the three forms the vacuum chamber 20 of " recessed " font.
Preferably, described ferromagnetic thin film 3 is arranged on the lower surface of elastic film 4 by sputtering method or molecular beam epitaxy, and described tunnel mistor 7 is arranged on the upper surface of bonding substrate 1 by sputtering method or molecular beam epitaxy.
Preferably, described ferromagnetic thin film 3 is sandwich construction, can be to be followed successively by from top to bottom: silicon dioxide layer 11, titanium dioxide layer 12, platinum layer 13, cobalt ferrite layer 14, bismuth ferrite layer 15.
Preferably, described tunnel mistor 7 links to each other with tunnel mistor electrode 9 by tunnel mistor extension line 8, and tunnel mistor electrode 9 is arranged on the upper surface of the elongated area of bonding substrate 1.
Preferably, described tunnel mistor 7 is ferromagnetic layer 16, insulation course 17 and lower ferromagnetic layers 18 on arranging successively from top to bottom on the semiconductive material substrate layer, and whole tunnel mistor 7 is the multi-layer nano membrane structure.
Among the present invention; acted on the elastic film 4 of ferromagnetic thin film supporting body 10 by the contact hole 6 on the protective cover 5 by measuring pressure; when there are pressure reduction in vacuum chamber 20 and ambient pressure; the Z-direction bending will occur in the neighboring area of elastic film 4; and the central area rigidity of elastic film 4 is relatively large; shape remains unchanged; can only be in the Z-direction translation; cause that the ferromagnetic thin film 3 that is arranged on its central area lower surface Z-direction occurs moves; faint variation occurs in the magnetic field that ferromagnetic thin film 3 produces; according to tunnel magneto-resistance effect; acute variation can occur in the resistance of tunnel mistor 7 under Weak magentic-field changes; the curtage that resistance change impact outputs to external circuit changes, and realizes by the measurement of measuring pressure.
Among the present invention, because acute variation can occur in the resistance of tunnel mistor 7 under faint changes of magnetic field, this variation can improve 1-2 the order of magnitude with the sensitivity of pressure transducer, so MEMS tunnel magnetoresistive height pressure transducer all can have obvious response for the pressure of subtle change.
Description of drawings
Fig. 1 is the integrally-built stereographic map of inventive embodiments.
Fig. 2 is the vertical view of inventive embodiments.
Fig. 3 is the integrally-built sectional view of inventive embodiments.
Fig. 4 is the presser sensor schematic diagram of inventive embodiments.
Fig. 5 is the tunnel mistor of inventive embodiments and the plane structure chart of bonding baseplate assembly.
Fig. 6 is the ferromagnetic thin film structural drawing of inventive embodiments.
Fig. 7 is the tunnel mistor structural drawing of inventive embodiments.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further details, the example of described embodiment is shown in the drawings, and wherein identical or similar label represents identical or similar original paper or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In the present invention, it should be explained that, orientation or the position relationship of the indications such as term " " center ", " on ", D score, 'fornt', 'back', " left side ", " right side " be based on orientation shown in the drawings or position relationship; only be for convenience of description with simplified characterization the present invention; rather than the device of indication or hint indication or element must have specific orientation, with specific orientation structure and operation, so can not be interpreted as limitation of the present invention.
In the present invention, need to prove that unless clear and definite regulation and restriction are arranged in addition, term " links to each other ", " connection " should do broad understanding, for example: can be to be fixedly connected with, also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be direct connection, also can be indirectly to link to each other by intermediary, can be the connection of two element internals.For those of ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
Tunnel magneto-resistance effect is based on the spin effect of electronics, be separated with the magnetic multilayer film structure of insulator or semi-conductive non-magnetosphere at pinned magnetic layer and magnetic free layer middle ware, because the electric current between pinned magnetic layer and magnetic free layer by the tunneling effect based on electronics, therefore claims this multi-layer film structure to be called MTJ.This MTJ is under the voltage effect across insulation course, and its tunnel current and tunnel resistor depend on the relative orientation of two ferromagnetic layers (pinned magnetic layer and magnetic free layer) magnetization.Under the effect of magnetic free layer in the outfield, its magnetization direction changes, and the direction of magnetization of pinning layer is constant, this moment, two magnetospheric magnetization relative orientations changed, then can across insulation course magnetic tunnel tie and observe large resistance variations, this physical influence just is being based on electronics at the tunneling effect of insulation course, therefore is called tunneling magnetoresistance.
The resistance value of tunnel mistor changes with the variation of externally-applied magnetic field value, and this change can reach 30～50% for aluminium oxide, can reach 200% for magnesium oxide, so its output is considerable, and sensitivity is very high.Just because of these advantages of tunnel mistor, it is penetrated into industry aspect and the application of sensor gradually, for a lot of sensor application fields provide brand-new technical scheme.
Below in conjunction with accompanying drawing structural principle of the present invention, principle of work are described in more detail.
As shown in Figure 1, 2, 3, according to one embodiment of present invention, MEMS tunnel magnetoresistive height pressure transducer comprises: bonding substrate 1, ferromagnetic thin film 3, protective cover 5, tunnel mistor 7 and ferromagnetic thin film supporting body 10.
Particularly, device is take bonding substrate 1 as carrier; Ferromagnetic thin film supporting body 10 is located at the top of bonding substrate 1, for
The shape structure is connected with bonding substrate 1 around it, and ferromagnetic thin film supporting body 10 is comprised of two parts: top is divided into elastic film 4, and the bottom is divided into pad framework 2; Ferromagnetic thin film 3 is arranged on the lower surface in elastic film 4 centre positions; Tunnel mistor 7 is arranged on the center of bonding substrate 1 upper surface as sensing unit, with the position of ferromagnetic thin film 3 over against; Protective cover 5 can be made of silicon materials, is connected to the top of ferromagnetic thin film supporting body 10, and the upper surface center of protective cover 5 is provided with the contact hole 6 of through-hole form, is used for communication with cavity 19 and the external world.
In the embodiment of the invention, the length of the directions X of described ferromagnetic thin film supporting body 10 is less than the length of the directions X of bonding substrate 1, and it is inner that the border 21 of ferromagnetic thin film supporting body 10 is positioned at bonding substrate 1 upper surface.Bonding substrate 1 has an elongated area with respect to ferromagnetic thin film supporting body 10.
In the embodiment of the invention, the thickness of the central area of described elastic film 4 is greater than thickness all around, and described tunnel mistor 7 is positioned at the center of bonding substrate 1.Ferromagnetic thin film 3 and tunnel mistor 7 over against, the shape of ferromagnetic thin film 3 and area are decided according to power and the distribution needs situation of 7 pairs of magnetic field intensitys of tunnel mistor.
In the embodiment of the invention, described pad framework 2 is the hollow frame structure, and its thickness is determined by detecting range.Pad framework 2, the below links to each other with bonding substrate 1, and the above covers elastic film 4, and the three forms the vacuum chamber 20 of " recessed " font.The effect of vacuum chamber 20 has two, and the one: make the external world and vacuum chamber 20 have pressure reduction, deformation occurs in elastic film 4 pressure difference effect neighboring areas, causes the displacement of the ferromagnetic thin film 3 generation Z-directions that are arranged on elastic film 4 centre positions; The 2nd: for the movement of ferromagnetic thin film 3 provides a space.
As shown in Figure 4; according to one embodiment of present invention; extraneous gas enters inner chamber 19 by the contact hole 6 on the protective cover 5; when there are pressure reduction in vacuum chamber 20 and ambient pressure; differential pressure action is on elastic film 4; thinner region generation Z-direction is crooked around making elastic film 4; and the central area of elastic film 4 is because rigidity is larger; shape remains unchanged; can only be in the Z-direction translation; cause the ferromagnetic thin film 3 corresponding micro-displacements that produce a Z direction of its central area lower surface; faint variation occurs in the magnetic field of causing ferromagnetic thin film 3 to produce, and according to tunnel magneto-resistance effect, the resistance of tunnel mistor 7 can under Weak magentic-field changes acute variation occur; thereby impact outputs to the curtage of external circuit to be changed, and realizes by the measurement of measuring pressure.Violent variation occurs in the resistance of tunnel mistor 7 under the faint variation in magnetic field, this variation can improve 1-2 the order of magnitude with the sensitivity of pressure transducer.
As shown in Figure 5, according to one embodiment of present invention, tunnel mistor 7 is
Shape, bonding upper surface of base plate 1 are provided with tunnel mistor 7, tunnel mistor extension line 8, tunnel mistor electrode 9.Tunnel mistor 7 is located at the center of the upper surface of bonding substrate 1, and tunnel mistor electrode 9 is located at the upper surface of the elongated area of bonding substrate 1.Tunnel mistor 7 links to each other with tunnel mistor electrode 9 by tunnel mistor extension line 8.
As shown in Figure 6, according to one embodiment of present invention, ferromagnetic thin film 3 is sandwich construction.Thus, can be used with tunnel mistor 7 better.Preferably, the ferromagnetic thin film layer can comprise that the upper surface of elastic film 4 is followed successively by silicon dioxide layer 11, titanium dioxide layer 12, platinum layer 13, cobalt ferrite layer 14 and bismuth ferrite layer 15 downwards.Need to prove, above-mentioned ferromagnetic thin film 3 can design and produce by molecular beam epitaxy, molecular beam epitaxy be a kind of on semiconductor wafer the new technology of the crystal film of growing high-quality, under vacuum condition, be grown on the elastic film layer by layer by crystal structure arrangement, and form nano thick film, successively deposit, in deposition process, need quality, the thickness of strict control film forming, with the quality of avoiding film forming and accuracy of detection and the sensitivity of thickness effect pressure transducer.
As shown in Figure 7, according to one embodiment of present invention, tunnel mistor 8 comprises ferromagnetic layer 16, insulation course 17, the ferromagnetic layer 18 that bonding substrate 1 is upwards arranged successively.Need to prove, above-mentioned tunnel mistor 7 can design and produce by molecular beam epitaxy, molecular beam epitaxy be a kind of on semiconductor wafer the crystal film of growing high-quality, under vacuum condition, on the crystal structure arrangement upper surface that is grown in bonding substrate 1 in layer, and form nano thick film, successively deposit, in deposition process, need quality, the thickness of strict control film forming, with the quality of avoiding film forming and accuracy of detection and the sensitivity of thickness effect pressure transducer.
Principle of work of the present invention is:
Acted on the elastic film 4 by the contact hole 6 on the protective cover 5 by measuring pressure; when there are pressure reduction in vacuum chamber 20 and ambient pressure; differential pressure action is on elastic film 4; thinner region generation Z-direction is crooked around making elastic film 4; and the central area of elastic film 4 is because rigidity is larger; shape remains unchanged; can only be in the Z-direction translation; cause the ferromagnetic thin film 3 corresponding micro-displacements that a Z direction occurs of its central area lower surface; faint variation occurs in the magnetic field of causing ferromagnetic thin film 3 to produce; according to tunnel magneto-resistance effect; acute variation can occur in the resistance of tunnel mistor 7 under Weak magentic-field changes; thereby impact outputs to the curtage of external circuit to be changed, and realizes by the measurement of measuring pressure.Owing between height above sea level and the pressure certain relation is arranged, just can obtain sea level elevation by the pressure that records.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that, can carry out various variation, modification, replacement and modification to these embodiment in the situation that does not break away from principle of the present invention and aim, have the right requirement and equivalent thereof of scope of the present invention limits.
Claims (9)
1. a MEMS tunnel magnetoresistive height pressure transducer is characterized in that, comprising:
Bonding substrate (1);
Ferromagnetic thin film supporting body (10) is arranged on bonding substrate (1) top, and top is divided into elastic film (4), and the bottom is divided into pad framework (2), and pad framework (2) is connected with bonding substrate (1) all around;
Ferromagnetic thin film (3) is arranged on the center of elastic film (4) lower surface of ferromagnetic thin film supporting body (10);
Tunnel mistor (7) is arranged on bonding substrate (1) upper surface center, with the position of ferromagnetic thin film (3) over against;
Protective cover (5) is fixed on the top of ferromagnetic thin film supporting body (10), and the centre of protective cover (5) upper surface arranges the inner chamber (19) of connective protection cover (5) and the contact hole (6) of extraneous through hole shape.
2. MEMS tunnel magnetoresistive height pressure transducer according to claim 1, its characteristic is, the length of the directions X of described ferromagnetic thin film supporting body (10) is less than the length of the directions X of bonding substrate (1), and bonding substrate (1) has an elongated area with respect to ferromagnetic thin film supporting body (10).
3. MEMS tunnel magnetoresistive height pressure transducer according to claim 1, its characteristic be, the thickness of described elastic film (4) central area greater than around thickness.
4. MEMS tunnel magnetoresistive height pressure transducer according to claim 1, it is characterized in that, described pad framework (2) is the hollow frame structure, link to each other with bonding substrate (1) below the pad framework (2), the above covers elastic film (4), and the three forms the vacuum chamber (20) of " recessed " font.
5. MEMS tunnel magnetoresistive height pressure transducer according to claim 1 is characterized in that described ferromagnetic thin film (3) is sandwich construction.
6. MEMS tunnel magnetoresistive height pressure transducer according to claim 5, it is characterized in that described sandwich construction is to be followed successively by from top to bottom: silicon dioxide layer (11), titanium dioxide layer (12), platinum layer (13), cobalt ferrite layer (14), bismuth ferrite layer (15).
7. MEMS tunnel magnetoresistive height pressure transducer according to claim 1 is characterized in that, described tunnel mistor (7) links to each other with tunnel mistor electrode (9) by tunnel mistor extension line (8).
8. MEMS tunnel magnetoresistive height pressure transducer according to claim 7 is characterized in that described tunnel mistor electrode (9) is arranged on the upper surface of the elongated area of bonding substrate (1).
9. MEMS tunnel magnetoresistive height pressure transducer according to claim 1, it is characterized in that, described tunnel mistor (7) is ferromagnetic layer (17), insulation course (18) and lower ferromagnetic layer (19) on arranging successively from top to bottom on the semiconductive material substrate layer, and whole tunnel mistor (7) is the multi-layer nano membrane structure.
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| CN 201220541804 CN202853817U (en) | 2012-10-22 | 2012-10-22 | MEMS tunnel magnetic resistance height pressure transducer |
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| CN 201220541804 CN202853817U (en) | 2012-10-22 | 2012-10-22 | MEMS tunnel magnetic resistance height pressure transducer |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914394A (en) * | 2012-10-22 | 2013-02-06 | 清华大学 | MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor |
| CN106449269A (en) * | 2016-10-12 | 2017-02-22 | 厦门大学 | Pressure sensitive structure and preparation method therefor |
| CN111473806A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Capillary channel environment sensor and preparation method thereof |
| CN113008434A (en) * | 2021-02-07 | 2021-06-22 | 中国人民解放军国防科技大学 | Orthogonal differential flexible electromagnetic sensor for residual stress detection |
| CN113196026A (en) * | 2018-12-20 | 2021-07-30 | 恩德莱斯和豪瑟尔欧洲两合公司 | Pressure gauge comprising a device for offsetting an isolation diaphragm |
| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
-
2012
- 2012-10-22 CN CN 201220541804 patent/CN202853817U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914394A (en) * | 2012-10-22 | 2013-02-06 | 清华大学 | MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor |
| CN102914394B (en) * | 2012-10-22 | 2014-12-24 | 清华大学 | MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor |
| CN106449269A (en) * | 2016-10-12 | 2017-02-22 | 厦门大学 | Pressure sensitive structure and preparation method therefor |
| CN113196026A (en) * | 2018-12-20 | 2021-07-30 | 恩德莱斯和豪瑟尔欧洲两合公司 | Pressure gauge comprising a device for offsetting an isolation diaphragm |
| CN111473806A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Capillary channel environment sensor and preparation method thereof |
| CN111473806B (en) * | 2020-04-17 | 2022-04-05 | 江苏多维科技有限公司 | Capillary channel environment sensor and preparation method thereof |
| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
| CN113008434A (en) * | 2021-02-07 | 2021-06-22 | 中国人民解放军国防科技大学 | Orthogonal differential flexible electromagnetic sensor for residual stress detection |
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Granted publication date: 20130403 Termination date: 20191022 |