CN115267623B - Magneto-resistance magnetic switch sensor - Google Patents
Magneto-resistance magnetic switch sensor Download PDFInfo
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- CN115267623B CN115267623B CN202211166139.4A CN202211166139A CN115267623B CN 115267623 B CN115267623 B CN 115267623B CN 202211166139 A CN202211166139 A CN 202211166139A CN 115267623 B CN115267623 B CN 115267623B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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Abstract
The invention discloses a magneto-resistance magnetic switch sensor, which relates to the technical field of magnetic sensors and comprises: a first set of wheatstone bridges and a second set of wheatstone bridges; the first group of Wheatstone bridges and the second group of Wheatstone bridges are used for inducing magnetic fields in a first direction and a second direction; the magnetic fields in the first direction and the second direction are mutually orthogonal; AMR magneto-resistance sensing elements or GMR or TMR magneto-resistance sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges; the isotropy measurement of the magnetic field by a single chip can be realized by different bridge configurations and measurement modes.
Description
Technical Field
The invention relates to the technical field of magnetic sensors, in particular to a magneto-resistance magnetic switch sensor.
Background
In the fields of consumer electronics, industrial control, etc., there are applications where it is desirable to achieve isotropic detection of a magnetic field, i.e. a magnetic sensor has substantially the same response for different magnetic field directions, as long as the magnetic field is of the same magnitude; in order to meet the requirement, a plurality of magnetic sensors can be installed according to different detection directions, magnetic field components in all directions are measured respectively, and then the data of the plurality of sensors are subjected to numerical operation to realize response; however, the implementation mode is complex to install, occupies a large space, has high cost, requires additional calculation amount and is inconvenient to use in practice;
the magneto-resistive sensor can be manufactured by a semiconductor manufacturing process, and magneto-resistive sensors with different sensing directions can be integrated on one chip so as to realize the detection of magnetic fields in two or more orthogonal directions. Commonly used magnetoresistive sensors are classified into Anisotropic Magnetoresistance (AMR), giant Magnetoresistance (GMR) and Tunnel Magnetoresistance (TMR), and mainly sense a magnetic field of a plane in which the sensor is located; however, the sensor for three magneto-resistances AMR, GMR and TMRThe reason and the characteristics are not the same. The magnetic resistance change rule of AMR is that father R is cos theta, wherein R is the magnetic resistance change rate, and theta is the included angle between magnetic moment and current; the magnetic resistance change rule of GMR is similar to TMR, isWhereinR is the magnetic resistance change rate, and the magnetic resistance change rate is equal to the magnetic resistance change rate,is the included angle between the magnetic moments of the free layer and the pinned layer;
compared with other magnetic sensor technologies, the magnetic resistance sensor has the advantages of high sensitivity and adjustable induction threshold point, and can meet the detection of isotropic magnetic fields with different sizes by combining a semiconductor manufacturing process;
in view of this, it is necessary to provide a novel magnetoresistive magnetic switch sensor that realizes isotropic detection of a magnetic field by a single chip.
Disclosure of Invention
The present invention is directed to a magneto-resistive magnetic switch sensor, which solves the above-mentioned problems.
In order to solve the technical problems, the invention provides the following technical scheme:
a magnetoresistive magnetic switch sensor, comprising: a first set of wheatstone bridges and a second set of wheatstone bridges; the first group of Wheatstone bridges and the second group of Wheatstone bridges form an AMR magneto-resistance magnetic switch sensor or a GMR or TMR magneto-resistance magnetic switch sensor; the first group of Wheatstone bridges and the second group of Wheatstone bridges are used for inducing magnetic fields in a first direction and a second direction; the magnetic fields in the first direction and the second direction are mutually orthogonal; AMR magneto-resistance sensing elements or GMR or TMR magneto-resistance sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges;
when the first group of Wheatstone bridges and the second group of Wheatstone bridges form the AMR magneto-resistance magnetic switch sensor, AMR magneto-resistance sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges; a first set of wheatstone bridges in the AMR magnetoresistive magnetic switch sensor may partially sense magnetic fields in both the first direction and the second direction simultaneously, and a second set of wheatstone bridges in the AMR magnetoresistive magnetic switch sensor may partially sense magnetic fields in both the first direction and the second direction simultaneously;
the sensing mode of the AMR magneto-resistance magnetic switch sensor is as follows: the angle of the direction of the combined magnetic field of the first direction and the second direction is alpha, and the magnitude is H. For a range of magnetic fields, the resistance change of the first set of Wheatstone bridges is approximately proportional toThe resistance change of the second set of wheatstone bridges is approximately proportional to；
When the first group of Wheatstone bridges and the second group of Wheatstone bridges form a GMR or TMR magneto-resistance magnetic switch sensor, GMR or TMR magneto-resistance sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges; a first set of wheatstone bridges in the GMR or TMR magnetoresistive magnetic switch sensor primarily senses a magnetic field in a first direction and a second set of wheatstone bridges in the GMR or TMR magnetoresistive magnetic switch sensor primarily senses a magnetic field in a second direction;
the sensing mode of the GMR or TMR magneto-resistance magnetic switch sensor is as follows: the magnetic field in the first direction is H1, the magnetic field in the second direction is H2, and the combined magnetic field in the first direction and the second direction is H. For a range of magnetic fields, the resistance change of the first set of wheatstone bridges is approximately proportional to H1 and the resistance change of the second set of wheatstone bridges is approximately proportional to H2.
Preferably, the first group of wheatstone bridges and the second group of wheatstone bridges are provided with a plurality of bridge arms, and four bridge arms form a full bridge.
Preferably, the first group of wheatstone bridges and the second group of wheatstone bridges are provided with a plurality of bridge arms, and two bridge arms form a half-bridge.
Preferably, a plurality of AMR magneto-resistance sensing elements or GMRs or TMR magneto-resistance sensing elements are arranged in the bridge arm; the AMR magneto-resistance induction element is formed by etching a magneto-resistance film; the GMR or TMR magneto-resistance sensing element is formed by etching a free layer, a pinning layer, an intermediate layer or a tunneling layer multilayer magnetic film;
preferably, the AMR magnetoresistive sensing element or GMR or TMR magnetoresistive sensing element is etched from the magnetoresistive film into a linear line shape.
Preferably, the AMR magnetoresistive sensing element or GMR or TMR magnetoresistive sensing element is etched from the magnetoresistive film into a curvilinear line shape, including but not limited to a circular arc, a wavy shape.
Preferably, the AMR magnetoresistive sensing elements of the first and second sets of wheatstone bridges are arranged rotated 45 ° relative to each other.
Preferably, the GMRs or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged rotated 90 to each other while maintaining the pinned magnetic moment directions of the pinned layers of the GMRs or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges parallel to each other.
Preferably, the GMR or TMR magnetoresistive sensing elements in the first and second sets of wheatstone bridges are arranged parallel to each other while the pinned magnetic moment directions of the pinned layers of the GMR or TMR magnetoresistive sensing elements in the first and second sets of wheatstone bridges are held at an angle of 90 °.
Preferably, the output signal of the first group of wheatstone bridges is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal reflecting the magnitude of the magnetic field in the first direction and the second direction, which is V1'; the output signal of the second group of wheatstone bridges is V2, the zero offset2 is subtracted from the V2 signal to obtain a signal V2 ' reflecting the magnitudes of magnetic fields in the first direction and the second direction, a signal v=sqrt (V1 ' +v2 ') isotropically reflecting the magnitudes of the superimposed magnetic fields in the first direction and the second direction can be obtained according to V1 ' and V2 ', and the isotropic response of the magnetoresistive magnetic switch sensor to the external magnetic field can be obtained according to the signal V reflecting the magnitudes of the superimposed magnetic field and the threshold point set by the magnetic switch.
Compared with the prior art, the invention has the following beneficial effects:
according to the novel magneto-resistance magnetic switch sensor provided by the invention, isotropy measurement of a magnetic field by a single chip can be realized through different bridge configurations and measurement modes; by arranging two bridge arms to form a half bridge, the area of a chip can be reduced in the production and manufacturing process of the bridge, and the production cost is further reduced; by etching the magneto-resistive sensing element into a curved line shape including but not limited to a circular arc shape and a wavy shape, the magneto-resistive sensing element adopting the curved line can remarkably reduce hysteresis error and improve detection accuracy of the magnetic switch sensor.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a first embodiment of an AMR magnetoresistive magnetic switch sensor;
FIG. 2 is a schematic diagram of a second embodiment of an AMR magnetoresistive magnetic switch sensor;
FIG. 3 is a schematic diagram of an embodiment of an AMR magnetoresistive magnetic switch sensor;
FIG. 4 is a schematic diagram of a first embodiment of a GMR or TMR magnetoresistive magnetic switch sensor;
FIG. 5 is a schematic diagram of a second embodiment of a GMR or TMR magnetoresistive magnetic switch sensor;
FIG. 6 is a schematic diagram of the structure of one embodiment of a GMR or TMR magnetoresistive magnetic switch sensor;
FIG. 7 is a schematic diagram of another embodiment of a GMR or TMR magnetoresistive magnetic switch sensor.
In the figure: 1. a first set of wheatstone bridges; 2. a second set of wheatstone bridges; 3. an AMR magnetoresistive sensing element; 4. GMR or TMR magneto-resistive sensing elements.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides the technical scheme that:
referring to fig. 1, a magneto-resistive magnetic switch sensor, includes: a first set of wheatstone bridges 1 and a second set of wheatstone bridges 2; the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 form an AMR reluctance magnetic switch sensor; an AMR magneto-resistive sensing element 3 is arranged in the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2; a first set of wheatstone bridges 1 in the AMR magnetoresistive magnetic switch sensors can partially sense magnetic fields in both the first direction and the second direction simultaneously, and a second set of wheatstone bridges 2 in the AMR magnetoresistive magnetic switch sensors can partially sense magnetic fields in both the first direction and the second direction simultaneously; the magnetic field in the first direction is orthogonal to the magnetic field in the second direction; the AMR magnetoresistive sensing elements 3 in the first set of wheatstone bridges 1 and the second set of wheatstone bridges 2 are arranged rotated 45 ° relative to each other;
when the magneto-resistive magnetic switch sensor is an AMR magneto-resistive magnetic switch sensor, the output signal of a first group of Wheatstone bridges 1 in the AMR magneto-resistive magnetic switch sensor is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal V1' which partially reflects the magnetic field magnitudes of the first direction and the second direction; the output signal of the second wheatstone bridge 2 is V2, the zero offset2 is subtracted from the V2 signal to obtain another signal which partially reflects the magnetic field magnitudes in the first direction and the second direction, and according to V1 ' and V2 ', a signal v=sqrt (V1 ' +v2 ' V2 ') which isotropically reflects the total superimposed magnetic field magnitudes in the first direction and the second direction can be obtained;
according to the signal reflecting the total superimposed magnetic field and the threshold value point set by the magnetic switch, the isotropy response of the reluctance magnetic switch sensor to the external magnetic field can be obtained; one level is output when the signal V is greater than the magnetic switch threshold point, and the other level is output when the signal V is less than the magnetic switch threshold point.
Embodiment one:
the first group of wheatstone bridge 1 is composed of a full bridge composed of four bridge arms; the second group of Wheatstone bridges 2 consists of a full bridge consisting of four bridge arms;
each bridge arm of the first group of wheatstone bridges 1 and the second group of wheatstone bridges 2 consists of a plurality of AMR magneto-resistance induction elements 3;
the AMR magnetoresistive sensing element 3 is etched from the magnetoresistive film into a linear line shape.
Embodiment two, as described in fig. 2:
the first group of wheatstone bridges 1 consists of half-bridges consisting of two bridge arms; the second group of wheatstone bridges 2 consists of half-bridges consisting of two bridge arms; by using the half-bridge structure, the signal amplitude can be reduced by half theoretically, but the area of a chip can be reduced, so that the production cost is reduced;
each bridge arm of the first group of wheatstone bridges 1 and the second group of wheatstone bridges 2 consists of a plurality of AMR magneto-resistance sensing elements 3;
as a specific embodiment of the present invention, as shown in fig. 3, the first wheatstone bridge 1 is a full bridge including four bridge arms, and the second wheatstone bridge 2 is also a full bridge including four bridge arms; each bridge arm of the first group of wheatstone bridges 1 and the second group of wheatstone bridges 2 consists of a plurality of AMR magneto-resistance induction elements 3; the AMR magnetoresistive sensing element 3 is etched from the magnetoresistive film into a curvilinear line shape, including but not limited to a circular arc, a wavy shape;
the use of the AMR magnetoresistive sensing element 3 in the shape of a curved line can significantly reduce hysteresis errors and improve the detection accuracy of the magnetic switch sensor.
Referring to fig. 4, a magneto-resistive magnetic switch sensor, includes: a first set of wheatstone bridges 1 and a second set of wheatstone bridges 2; when the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 form a GMR or TMR magneto-resistance magnetic switch sensor, GMR or TMR magneto-resistance sensing elements 4 are arranged in the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2; a first set of wheatstone bridges 1 in the GMR or TMR magneto-resistive magnetic switch sensor mainly senses a magnetic field in a first direction and a second set of wheatstone bridges 2 in the GMR or TMR magneto-resistive magnetic switch sensor mainly senses a magnetic field in a second direction; the magnetic field in the first direction is orthogonal to the magnetic field in the second direction;
when the magneto-resistive magnetic switch sensor is a GMR or TMR magneto-resistive magnetic switch sensor, the output signal of a first group of Wheatstone bridges 1 in the GMR or TMR magneto-resistive magnetic switch sensor is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal V1' which mainly reflects the magnetic field size in the first direction; the output signal of the second group wheatstone bridge 2 is V2, the zero offset2 is subtracted from the V2 signal to obtain a signal V2 'mainly reflecting the magnetic field magnitude in the second direction, and a signal v=sqrt (V1' +v2 'V2') isotropically reflecting the superimposed magnetic field magnitudes in the first direction and the second direction can be obtained according to V1 'and V2';
according to the signal reflecting the size of the superimposed magnetic field and the threshold value point set by the magnetic switch, the isotropic response of the magneto-resistive magnetic switch sensor to the external magnetic field can be obtained, one level is output when the signal V is larger than the threshold value point of the magnetic switch, and the other level is output when the signal V is smaller than the threshold value point of the magnetic switch.
Embodiment one:
the first group of Wheatstone bridges 1 consists of a full bridge consisting of four bridge arms; the second group of Wheatstone bridges 2 consists of a full bridge consisting of four bridge arms;
each bridge arm of the first group of wheatstone bridges 1 and the second group of wheatstone bridges 2 consists of a plurality of GMRs or TMR magneto-resistance induction elements 4;
the GMR or TMR magneto-resistance sensing element 4 is formed by etching a free layer, a pinning layer, an intermediate layer or a tunneling layer multilayer magnetic film; the GMR or TMR magneto-resistive sensing element 4 is etched into a linear line shape from the multilayer magneto-resistive film;
the GMR or TMR magneto-resistive sensing elements 4 of the first set of wheatstone bridges 1 and the second set of wheatstone bridges 2 are arranged rotated by 90 ° with respect to each other while keeping the pinned magnetic moment directions of the pinned layers of the GMR or TMR magneto-resistive sensing elements 4 of the first set of wheatstone bridges 1 and the second set of wheatstone bridges 2 parallel to each other (the arrow direction shown in fig. 4 is the pinned magnetic moment direction of the pinned layers);
in the second embodiment, as shown in fig. 5,
the first group of Wheatstone bridges 1 consists of half bridges consisting of two bridge arms; the second group of wheatstone bridges 2 consists of half-bridges consisting of two bridge arms;
each bridge arm of the first set of wheatstone bridges 1 and the second set of wheatstone bridges 2 consists of a plurality of GMR or TMR magneto-resistive sensing elements 4 (the arrow direction shown in fig. 5 is the pinned magnetic moment direction of the pinned layer of the GMR or TMR magneto-resistive sensing elements 4); the half bridge structure is used, so that the signal amplitude can be reduced by half theoretically, but the area of a chip can be reduced, and the production cost is further reduced.
As a specific embodiment of the present invention, as shown in fig. 6, the first wheatstone bridge 1 is a full bridge including four bridge arms, and the second wheatstone bridge 2 is also a full bridge including four bridge arms; each bridge arm of the first group of wheatstone bridges 1 and the second group of wheatstone bridges 2 consists of a plurality of GMRs or TMR magneto-resistance induction elements 4;
the GMR or TMR magnetoresistive sensing element 4 is etched from a multilayer magnetic film into a curved line shape, including but not limited to, a circular arc shape, a wavy shape (the arrow direction shown in fig. 6 is the pinned magnetic moment direction of the pinned layer of the GMR or TMR magnetoresistive sensing element 4);
the use of the GMR or TMR magnetoresistive sensing element 4 in the shape of a curved line can significantly reduce hysteresis errors and improve the detection accuracy of the magnetic switch sensor.
As a specific embodiment of the present invention, as shown in fig. 7, the GMR or TMR magnetoresistive sensing elements 4 of the first set of wheatstone bridges 1 and the second set of wheatstone bridges 2 are arranged parallel to each other, while the pinned magnetic moment directions of the pinned layers of the GMR or TMR magnetoresistive sensing elements 4 of the first set of wheatstone bridges 1 and the second set of wheatstone bridges 2 are kept at an angle of 90 ° (the arrow direction shown in fig. 7 is the pinned magnetic moment direction of the pinned layers);
by using a specific pinning annealing process, magnetic moments of pinning layers in different areas of the same chip are controlled in different set directions, and the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 with the same structural layout are realized to achieve the aim of measuring magnetic fields in the first direction and the second direction respectively.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (3)
1. A magnetoresistive magnetic switch sensor, characterized by: comprising the following steps: a first set of wheatstone bridges and a second set of wheatstone bridges; the first group of Wheatstone bridges and the second group of Wheatstone bridges are used for inducing magnetic fields in a first direction and a second direction; the magnetic fields in the first direction and the second direction are mutually orthogonal; AMR magneto-resistance sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges;
a plurality of AMR magneto-resistance induction elements are arranged in bridge arms of the first group of Wheatstone bridges and the second group of Wheatstone bridges; the AMR magneto-resistance induction element is formed by etching a magneto-resistance film;
the AMR magneto-resistance sensing element is etched into a curve line shape by a magneto-resistance film;
the sensing mode of the AMR magneto-resistance magnetic switch sensor is as follows: the angle of the resultant magnetic field direction of the first direction and the second direction is alpha, the magnitude is H, the resistance change of the first group of Wheatstone bridges is proportional to H.times.cos (2 alpha), and the resistance change of the second group of Wheatstone bridges is proportional to H.times.sin (2 alpha);
the AMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged rotated 45 ° relative to each other;
the output signal of the first group of Wheatstone bridges is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal which reflects the magnetic field sizes in the first direction and the second direction and is V1'; the output signal of the second group of wheatstone bridges is V2, the zero offset2 is subtracted from the V2 signal to obtain a signal V2 ' reflecting the magnitudes of magnetic fields in the first direction and the second direction, a signal v=sqrt (V1 ' +v2 ') isotropically reflecting the magnitudes of the superimposed magnetic fields in the first direction and the second direction can be obtained according to V1 ' and V2 ', and the isotropic response of the magnetoresistive magnetic switch sensor to the external magnetic field can be obtained according to the signal V reflecting the magnitudes of the superimposed magnetic field and the threshold point set by the magnetic switch.
2. A magnetoresistive magnetic switch sensor according to claim 1, wherein: the first group of Wheatstone bridges and the second group of Wheatstone bridges are respectively provided with a plurality of bridge arms, and four bridge arms form a full bridge.
3. A magnetoresistive magnetic switch sensor according to claim 1, wherein: the first group of Wheatstone bridges and the second group of Wheatstone bridges are respectively provided with a plurality of bridge arms, and two bridge arms form a half bridge.
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Citations (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004074764A2 (en) * | 2003-02-24 | 2004-09-02 | Hl-Planar Technik Gmbh | Magnetoresistive sensor for determining an angle or a position |
| CN1667412A (en) * | 2004-12-31 | 2005-09-14 | 中山大学 | Biological detection device and method utilizing immune bead |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| JP2010008160A (en) * | 2008-06-25 | 2010-01-14 | Hitachi Metals Ltd | Magnetic sensor and rotation angle detector |
| CN102047134A (en) * | 2008-03-26 | 2011-05-04 | 艾沃思宾技术公司 | Improved magnetic sensor design for suppression of barkhausen noise |
| CN102292773A (en) * | 2009-09-25 | 2011-12-21 | 艾沃思宾技术公司 | Three axis magnetic field sensor |
| CN102435963A (en) * | 2011-04-06 | 2012-05-02 | 江苏多维科技有限公司 | Monolithic dual-axis bridge-type magnetic field sensor |
| CN102621504A (en) * | 2011-04-21 | 2012-08-01 | 江苏多维科技有限公司 | Monolithic reference full bridge magnetic field sensor |
| CN102867909A (en) * | 2011-07-04 | 2013-01-09 | 山梨日本电气株式会社 | Magnetoresistance element and magnetic sensor using the same |
| CN103267955A (en) * | 2013-05-28 | 2013-08-28 | 江苏多维科技有限公司 | Single-chip bridge-type magnetic field sensor |
| JP2013195346A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| JP2013195345A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| CN103988311A (en) * | 2011-10-31 | 2014-08-13 | 艾沃思宾技术公司 | Apparatus and method for reset and stabilization control of a magnetic sensor |
| CN104919328A (en) * | 2013-01-18 | 2015-09-16 | 株式会社村田制作所 | Magnetic sensor and production method therefor |
| JP2016223894A (en) * | 2015-05-29 | 2016-12-28 | 株式会社村田製作所 | Magnetic sensor |
| CN109212439A (en) * | 2017-07-05 | 2019-01-15 | 亚德诺半导体集团 | Magnetic field sensor |
| CN109633496A (en) * | 2018-12-27 | 2019-04-16 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method and equipment |
| CN109752676A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of improvement Wheatstone bridge formula thin-film magnetoresistive sensor |
| CN110081813A (en) * | 2018-12-18 | 2019-08-02 | 贵州雅光电子科技股份有限公司 | A kind of production method of the AMR sensor chip of two times of angle sinewave outputs |
| CN110132124A (en) * | 2019-05-06 | 2019-08-16 | 微传智能科技（常州）有限公司 | Magnetic degree sensor and magnetic degree sensing device |
| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN210775815U (en) * | 2019-09-25 | 2020-06-16 | 三峡大学 | Probe for measuring broadband transient magnetic field |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN114415087A (en) * | 2022-03-29 | 2022-04-29 | 北京芯可鉴科技有限公司 | Magnetic sensor, circuit and electric energy meter |
-
2022
- 2022-09-23 CN CN202211166139.4A patent/CN115267623B/en active Active
Patent Citations (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004074764A2 (en) * | 2003-02-24 | 2004-09-02 | Hl-Planar Technik Gmbh | Magnetoresistive sensor for determining an angle or a position |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| CN1667412A (en) * | 2004-12-31 | 2005-09-14 | 中山大学 | Biological detection device and method utilizing immune bead |
| CN102047134A (en) * | 2008-03-26 | 2011-05-04 | 艾沃思宾技术公司 | Improved magnetic sensor design for suppression of barkhausen noise |
| JP2010008160A (en) * | 2008-06-25 | 2010-01-14 | Hitachi Metals Ltd | Magnetic sensor and rotation angle detector |
| CN102292773A (en) * | 2009-09-25 | 2011-12-21 | 艾沃思宾技术公司 | Three axis magnetic field sensor |
| CN102435963A (en) * | 2011-04-06 | 2012-05-02 | 江苏多维科技有限公司 | Monolithic dual-axis bridge-type magnetic field sensor |
| CN102621504A (en) * | 2011-04-21 | 2012-08-01 | 江苏多维科技有限公司 | Monolithic reference full bridge magnetic field sensor |
| CN102867909A (en) * | 2011-07-04 | 2013-01-09 | 山梨日本电气株式会社 | Magnetoresistance element and magnetic sensor using the same |
| CN103988311A (en) * | 2011-10-31 | 2014-08-13 | 艾沃思宾技术公司 | Apparatus and method for reset and stabilization control of a magnetic sensor |
| JP2013195345A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| JP2013195346A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| CN104919328A (en) * | 2013-01-18 | 2015-09-16 | 株式会社村田制作所 | Magnetic sensor and production method therefor |
| CN103267955A (en) * | 2013-05-28 | 2013-08-28 | 江苏多维科技有限公司 | Single-chip bridge-type magnetic field sensor |
| JP2016223894A (en) * | 2015-05-29 | 2016-12-28 | 株式会社村田製作所 | Magnetic sensor |
| CN109212439A (en) * | 2017-07-05 | 2019-01-15 | 亚德诺半导体集团 | Magnetic field sensor |
| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN110081813A (en) * | 2018-12-18 | 2019-08-02 | 贵州雅光电子科技股份有限公司 | A kind of production method of the AMR sensor chip of two times of angle sinewave outputs |
| CN109633496A (en) * | 2018-12-27 | 2019-04-16 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method and equipment |
| CN109752676A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of improvement Wheatstone bridge formula thin-film magnetoresistive sensor |
| CN110132124A (en) * | 2019-05-06 | 2019-08-16 | 微传智能科技（常州）有限公司 | Magnetic degree sensor and magnetic degree sensing device |
| CN210775815U (en) * | 2019-09-25 | 2020-06-16 | 三峡大学 | Probe for measuring broadband transient magnetic field |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN114415087A (en) * | 2022-03-29 | 2022-04-29 | 北京芯可鉴科技有限公司 | Magnetic sensor, circuit and electric energy meter |
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