CN117858611A - Magneto-resistance element, preparation method thereof and magneto-resistance sensor - Google Patents
Magneto-resistance element, preparation method thereof and magneto-resistance sensor Download PDFInfo
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Abstract
The invention belongs to the technical field of magnetic sensors, and discloses a magneto-resistance element, a preparation method thereof and a magneto-resistance sensor; the magnetoresistive element includes a first element portion for outputting a first signal that varies linearly in response to an external magnetic field within a preset magnetic field range parallel to a first direction of a first reference magnetic layer, a second element portion, and a processing portion; the second element part is used for responding to an external magnetic field to output a second signal which changes linearly in a preset magnetic field range parallel to a second direction of the first reference magnetic layer; the processing portion is electrically coupled to the first element portion and the second element portion. The invention limits the structures of the reference magnetic layer and the free magnetic layer in the magnetic resistance element, so that the magnetic resistance element can linearly respond under the magnetic fields of two different magnetic field directions, and the beneficial effects of high sensitivity, simple structure and easy industrialized realization of the device are realized.
Description
Technical Field
The present invention relates to the field of magnetic sensors, and more particularly, to a magnetoresistive element, a method for manufacturing the same, and a magnetoresistive sensor.
Background
The magnetic resistance sensor can convert the magnetic property change of the sensitive element caused by external factors such as magnetic field, current, stress strain, temperature, light and the like into an electric signal so as to detect corresponding physical quantity. Therefore, it is widely used in modern industry and electronic products.
The biaxial magnetic field sensor has higher integration level and orthogonality than the uniaxial magnetic field sensor, and can be conveniently applied to multiaxial or vector sensor occasions. Electronic compasses, geomagnetic measurements and the like all adopt biaxial or triaxial magnetic field measurement. Therefore, there is a wide need to produce a single-chip dual-axis magnetic field sensor with high integration.
The magneto-resistive element generally comprises a reference layer having a fixed magnetization direction and a free layer having a varying magnetization direction. Therefore, biaxial magnetic field sensors typically require multiple film forming or multi-chip packaging techniques. The adoption of multiple film forming leads to poor consistency of front and rear films, and the overall performance of the sensor is easily affected. The multi-chip packaging technology is adopted and limited by the packaging technology, the orthogonality of two axes cannot be ensured, and the packaging size and the production cost are large.
The foregoing is provided merely for the purpose of facilitating understanding of the technical solutions of the present invention and is not intended to represent an admission that the foregoing is prior art.
Disclosure of Invention
The invention aims to provide a magneto-resistance element, a preparation method thereof and a magneto-resistance sensor, which are used for solving the technical problems of poor consistency or large packaging size of the existing dual-axis magneto-resistance sensor.
To achieve the above object, a first aspect of the present invention proposes a magnetoresistive element.
The magnetoresistive element includes:
a first element part including a first reference magnetic layer having a closed vortex magnetization pattern and a first free magnetic layer having a non-closed vortex magnetization pattern for outputting a linearly varying first signal in response to an external magnetic field within a preset magnetic field range parallel to a first direction of the first reference magnetic layer;
a second element section including a second reference magnetic layer having a closed vortex magnetization pattern and a second free magnetic layer having a non-closed vortex magnetization pattern for outputting a linearly varying second signal in response to an external magnetic field within a preset magnetic field range parallel to a second direction of the first reference magnetic layer; the second direction is different from the first direction;
and a processing portion electrically coupled to the first element portion and the second element portion.
According to some embodiments of the invention, the film surfaces of the first reference magnetic layer and the second reference magnetic layer are circular or elliptical, and the ratio of the major axis to the minor axis is 1-2.
According to some embodiments of the invention, the first free magnetic layer has an elliptical film surface shape with a shape anisotropy field greater than a magnetocrystalline anisotropy field, and a long axis perpendicular to the first direction.
According to some embodiments of the invention, the second free magnetic layer has an elliptical film surface shape with a shape anisotropy field greater than its magnetocrystalline anisotropy field and a long axis perpendicular to the second direction.
According to some embodiments of the invention, the first and second reference magnetic layers have thicknesses of 30 nm-200 nm and long axes of 0.5-15 μm.
According to some embodiments of the invention, the first reference magnetic layer comprises a first ferromagnetic layer and a first soft magnetic layer, the first ferromagnetic layer being adjacent to one side of the first free magnetic layer; the second reference magnetic layer includes a second ferromagnetic layer and a second soft magnetic layer, the second ferromagnetic layer being adjacent to one side of the first reference magnetic layer; the first soft magnetic layer and the second soft magnetic layer are at least one of permalloy, amorphous alloy or microcrystalline alloy.
According to some embodiments of the invention, the first reference magnetic layer includes a first ferromagnetic layer, a first soft magnetic layer, and a first non-magnetic layer between the first ferromagnetic layer and the first soft magnetic layer; one side of the first ferromagnetic layer adjacent to the first free magnetic layer; the first soft magnetic layer is at least one of permalloy, amorphous alloy or microcrystalline alloy, and the first nonmagnetic layer is a nonmagnetic material.
According to some embodiments of the invention, the second reference magnetic layer includes a second ferromagnetic layer, a second soft magnetic layer, and a second non-magnetic layer between the second ferromagnetic layer and the second soft magnetic layer; a side of the second ferromagnetic layer adjacent to the second free magnetic layer; the second soft magnetic layer is at least one of permalloy, amorphous alloy or microcrystalline alloy, and the second nonmagnetic layer is a nonmagnetic material.
According to some embodiments of the invention, the magneto-resistive element comprises at least one first element portion, at least one second element portion and the processing portion.
According to some embodiments of the invention, the first element portion comprises a plurality of first magnetoresistances including a first bottom electrode layer, the first reference magnetic layer, a first tunneling layer, the first free magnetic layer, and a first top electrode layer; each first magnetic resistance is coupled in series or parallel to form the first element part; the first magnetoresistance has a sensitive response under an external magnetic field parallel to the first direction;
the second element part comprises a plurality of second magnetic resistances, wherein the second magnetic resistances comprise a second bottom electrode layer, the second reference magnetic layer, a second tunneling layer, the second free magnetic layer and a second top electrode layer; each second magnetic resistance is coupled in series or parallel to form the second element part; the second magnetoresistance has a sensitive response under an external magnetic field parallel to the second direction.
According to some embodiments of the invention, the first and second magnetic resistances are magnetic tunnel junctions;
according to some embodiments of the invention, the first direction forms an acute, right or obtuse angle with the second direction.
According to some embodiments of the invention, the angle between the first direction and the second direction is right angle;
in order to achieve the above object, a second aspect of the present invention provides a method for manufacturing a magneto-resistive element, wherein the first element portion and the second element portion have a wheatstone full bridge structure, and the magneto-resistive element is the magneto-resistive element.
The preparation method comprises the following steps:
(1) Providing a substrate;
(2) Sequentially depositing a bottom electrode layer film, a reference magnetic layer film, a tunneling layer film, a free magnetic layer film and a top electrode layer film on the substrate to obtain a first magnetic stack;
(3) Obtaining a magneto-resistive element having a first element portion and a second element portion on the magnetic stack flow sheet; the first element part is provided with a round first reference magnetic layer and an elliptic first free magnetic layer; the second element portion has a circular second reference magnetic layer and an elliptical second free magnetic layer.
To achieve the above object, a third aspect of the present invention provides a magnetoresistive sensor. The magnetoresistive sensor includes a magnetoresistive element; the magneto-resistive element is the magneto-resistive element or the magneto-resistive element prepared by the preparation method.
According to some embodiments of the invention, the magneto-resistive sensor is used for detection of an external magnetic field parallel to the in-plane.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention provides a magneto-resistance element, a preparation method thereof and a magneto-resistance sensor; the magneto-resistive element comprises a first element part, a second element part and a processing part, wherein the first element part comprises a first reference magnetic layer with a closed vortex magnetization pattern and a first free magnetic layer with a non-closed vortex magnetization pattern; the second element portion includes a second reference magnetic layer having a closed vortex magnetization pattern and a second free magnetic layer having a non-closed vortex magnetization pattern; the processing portion is electrically coupled to the first element portion and the second element portion and configured to generate a differential output signal. The invention limits the structures of the reference magnetic layer and the free magnetic layer in the magnetic resistance element, so that the magnetic resistance element can linearly respond under the magnetic fields of two different magnetic field directions, and the beneficial effects of high sensitivity, simple structure and easy industrialized realization of the device are realized.
Drawings
FIG. 1 is a schematic diagram of a magneto-resistive element according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a first device portion and a second device portion according to an embodiment of the invention;
FIG. 3 is a schematic top view of a magneto-resistive element according to another embodiment of the present invention;
FIG. 4 is a hysteresis loop diagram of an external magnetic field of the first reference magnetic layer in a direction parallel to the sensitive axis of the first element portion according to an embodiment of the present invention;
FIG. 5 is a hysteresis loop diagram of an external magnetic field of the second reference magnetic layer in a direction perpendicular to the sensitive axis of the second element portion according to an embodiment of the present invention;
FIG. 6 is a hysteresis loop diagram of an external magnetic field of the first free magnetic layer in a direction parallel to the sensitive axis of the first element portion according to an embodiment of the present invention;
FIG. 7 is a hysteresis loop diagram of an external magnetic field of the first free magnetic layer in a direction perpendicular to the sensitive axis of the first element portion according to an embodiment of the present invention;
FIG. 8 is a hysteresis loop diagram of an external magnetic field of the second free magnetic layer in a direction parallel to the sensitive axis of the second element portion according to an embodiment of the present invention;
FIG. 9 is a hysteresis loop diagram of an external magnetic field of the second free magnetic layer in a direction perpendicular to the sensitive axis of the second element portion according to an embodiment of the present invention;
the achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Reference numerals illustrate:
100. a first element portion; 200. a second element portion; 300 processing part; 301. a first bonding pad; 302 a second bonding pad; 303 a third pad; 304 fourth pad.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the technical solutions should be considered that the combination does not exist and is not within the scope of protection claimed by the present invention.
The magnetic resistance sensor can convert the magnetic property change of the sensitive element caused by external factors such as magnetic field, current, stress strain, temperature, light and the like into an electric signal so as to detect corresponding physical quantity. Therefore, it is widely used in modern industry and electronic products.
The biaxial magnetic field sensor has higher integration level and orthogonality than the uniaxial magnetic field sensor, and can be conveniently applied to multiaxial or vector sensor occasions. Electronic compasses, geomagnetic measurements and the like all adopt biaxial or triaxial magnetic field measurement. Therefore, there is a wide need to produce a high-integration, single-chip dual-axis magnetic field sensor.
The magneto-resistive element generally comprises a reference layer having a fixed magnetization direction and a free layer having a varying magnetization direction. Therefore, biaxial magnetic field sensors typically require multiple film forming or multi-chip packaging techniques. If the multiple film forming technology is adopted, the consistency of the front film and the rear film is poor, and the overall performance of the sensor is easily affected. If the multi-chip packaging technology is adopted, the method is limited by the packaging technology, the orthogonality of two axes cannot be ensured, the packaging size is large, and the production cost is high.
Therefore, an object of the embodiments of the present invention is to improve the technical problems of poor uniformity or large package size of the existing dual-axis magnetoresistive sensor.
A first aspect of an embodiment of the present invention provides a magnetoresistive element. As shown in fig. 1, the magnetoresistive element includes a first element portion 100, a second element portion 200, and a processing portion 300. The first element portion 100 and the second element portion 200 are electrically coupled to the processing portion 300, respectively.
In this embodiment, the first element portion 100 includes a first reference magnetic layer 101, a first tunneling layer 102, and a first free magnetic layer 103 sequentially stacked, and the first element portion 100 is configured to output a first signal that changes linearly in response to an external magnetic field within a predetermined magnetic field range parallel to a first direction (→) of the first reference magnetic layer 101, that is, a sensitive axis direction of the first element portion is the first direction.
In this embodiment, the second element portion 200 includes a second reference magnetic layer 201, a second tunneling layer 202, and a second free magnetic layer 203 sequentially stacked, and the second element portion 200 is configured to output a second signal that changes linearly in response to an external magnetic field within a preset magnetic field range parallel to a second direction (≡arrow direction) of the first reference magnetic layer 101, that is, a sensitive axis direction of the second element portion is the second direction. The first reference magnetic layer 101 is parallel to the second reference magnetic layer 102.
The second direction in this embodiment is different from the first direction. Specifically, the angle between the second direction and the first direction may be an acute angle, a right angle or an obtuse angle, which is specifically set according to the application of the magneto-resistive element, and is not limited herein.
In this embodiment, the processing portion 300 is electrically coupled to the first element portion 100 and the second element portion 200, and is configured to generate a differential output signal of the first signal and the second signal, or other signals related to the first signal and the second signal.
In this embodiment, the first reference magnetic layer 101 and the second reference magnetic layer 201 have a closed vortex magnetization pattern; the first free magnetic layer 103 and the second free magnetic layer 203 have a non-closed vortex magnetization pattern.
It should be appreciated that the first and second reference magnetic layers having a closed vortex magnetization pattern only have a closed vortex magnetization pattern in a particular environment; the method can be used for adjusting the magnitude of the external magnetic field in the process of keeping the magnetic field direction of the external magnetic field unchanged:
(1) When the external magnetic field is lower than the nucleation field, a closed vortex magnetization pattern can be formed on the film surfaces of the first reference magnetic layer and the second reference magnetic layer; the nucleation fields corresponding to the first and second reference magnetic layers may be the same or different.
(2) When the external magnetic field gradually decreases to zero from the nucleation field and increases to annihilation field from the opposite direction of zero, the closed vortex magnetization pattern moves in a certain direction of the film surface and gradually moves out of the film surface, and the resistance and the value of the external magnetic field can keep linear change;
(3) When the external magnetic field is reduced from the annihilation field to the nucleation field, the film surface of the magnetic field can form a closed vortex magnetization pattern again;
(4) In a third process in which the external magnetic field again continues to gradually decrease from the nucleation field to zero, and in a fourth process in which the external magnetic field increases from zero in the opposite direction to the annihilation field, the closed vortex magnetization pattern moves in the opposite direction across its membrane surface and gradually moves out of the membrane surface, with the resistance varying linearly with the value of the external magnetic field.
Therefore, when the external magnetic field is between the nucleation field and the opposite nucleation field, the resistance of the first reference magnetic layer and the second reference magnetic layer can be linearly changed along with the change of the value of the external magnetic field.
The nucleation field of the first and second reference magnetic layers is related to the material, the film surface shape, the film surface size, the film thickness, and the like. It should be appreciated that the first and second free magnetic layers having non-closed vortex magnetization patterns may have a magnetic resistance that varies linearly with the magnetic field only within a specific magnetic field in a direction parallel to the sensitive axis.
In this embodiment, the sensitive magnetic field directions of the first element portion and the second element portion are different, when the external magnetic field is parallel to the first direction, the magnetization of the first element portion changes linearly with the magnetic field strength, and when the external magnetic field is parallel to the second direction, the magnetization of the second element portion changes linearly with the magnetic field strength.
When the external magnetic field is parallel to the first direction, the magnetization of the first element part linearly changes with the magnetic field intensity, the magnetization of the second element part is zero, and the differential output signal output by the processing part is used for feeding back the situation of the external magnetic field parallel to the first direction.
When the external magnetic field is parallel to the second direction, the magnetization intensity of the second element part linearly changes along with the magnetic field intensity, the magnetization intensity of the first element part is zero, and the differential output signal output by the processing part is used for feeding back the situation of the external magnetic field parallel to the second direction.
In the magnetoresistive element of the embodiment of the invention, the magnetization directions of the first reference magnetic layer and the second reference magnetic layer are not fixed, and only the structures of the reference magnetic layer and the free magnetic layer are limited, so that the magnetoresistive element can realize sensitive response under the magnetic fields of two different magnetic field directions, and the magnetic field directions can be used as a biaxial magnetic field sensor when being orthogonal, and the magnetoresistive element has high sensitivity for collecting two mutually perpendicular magnetic fields. Meanwhile, the magnetic resistance element can be formed on a single chip, and has the advantages of good orthogonality, simple structure, easy industrialization realization and the like.
In the embodiment of the invention, the closed vortex magnetization patterns of the first reference magnetic layer and the second reference magnetic layer are realized by adjusting the film surface shape, the film surface thickness and the like.
In an embodiment of the present invention, as shown in fig. 2, the top view of the reference magnetic layer in the first element portion and the second element portion is circular, the top view of the free magnetic layer is elliptical, and the diameter of the reference magnetic layer is larger than the major axis of the free magnetic layer.
Specifically, the film surfaces of the first reference magnetic layer and the second reference magnetic layer are circular, the thickness is preferably 30 nm-200 nm, and the radius is preferably 0.5-15 μm. The film surfaces of the first free magnetic layer and the second free magnetic layer are elliptical, and the long axis values of the film surfaces are respectively lower than the diameters of the first reference magnetic layer and the second reference magnetic layer.
In another embodiment of the present invention, the film surfaces of the first reference magnetic layer and the second reference magnetic layer are elliptical, the ratio of the major axis to the minor axis is 1-2, and the major axis of the first reference magnetic layer is parallel to the first direction; the second reference magnetic layer has a long axis parallel to the second direction, preferably 30 nm-200 nm thick, and a long axis length of 0.5-15 μm.
In an embodiment of the present invention, the first reference magnetic layer includes a first ferromagnetic layer and a first soft magnetic layer, wherein the first ferromagnetic layer is near one side of the first free magnetic layer, and the first ferromagnetic layer is made of a ferromagnetic material, such as CoFeB, coFe; the first soft magnetic layer is a soft magnetic material, such as at least one of permalloy, amorphous alloy, or microcrystalline alloy, for inducing the first ferromagnetic layer to form a closed vortex magnetization pattern.
In the embodiment of the present invention, a nonmagnetic layer, such as Ru, may be further disposed between the first ferromagnetic layer and the first soft magnetic layer.
In an embodiment of the present invention, the second reference magnetic layer includes a second ferromagnetic layer and a second soft magnetic layer, wherein the second ferromagnetic layer is near one side of the second free magnetic layer, and the second ferromagnetic layer is made of a ferromagnetic material, such as CoFeB, coFe; the second soft magnetic layer is a soft magnetic material, such as at least one of permalloy, amorphous alloy, or microcrystalline alloy, for inducing the first ferromagnetic layer to form a closed vortex magnetization pattern.
A nonmagnetic layer, such as Ru, may also be disposed between the second ferromagnetic layer and the second soft magnetic layer of the present embodiment.
In an embodiment of the present invention, the direction of the sensitive axis of the first element portion is an x-axis, and the direction of the sensitive axis of the second element portion is a y-axis, wherein the x-axis and the y-axis are two directions perpendicular to the substrate plane.
Hysteresis loops of the first reference magnetic layer in the first element portion under an external magnetic field parallel to the sensitive axis direction of the first element portion are shown in fig. 4. According to FIG. 4, the magnetoresistance of the first reference magnetic layer may be at-H 1 ~H 1 Within the magnetic field rangeAs the external magnetic field changes linearly, it follows that r=ah, a is a constant.
The hysteresis loop of the second reference magnetic layer in the second element portion under an external magnetic field parallel to the sensitive axis direction of the second element portion is shown in fig. 5. According to FIG. 5, the magnetoresistance of the second reference magnetic layer may be at-H 2 ~H 2 The magnetic field range changes linearly with the external magnetic field, and accords with R=bH, and b is a constant.
The hysteresis loop of the first free magnetic layer in the first element portion under an external magnetic field parallel to the sensitive axis direction of the first element portion is shown in fig. 6. According to fig. 6, the magnetic moment of the first free magnetic layer may linearly vary with the external magnetic field within a range of the external magnetic field of ±5Oe parallel to the sensitive axis direction of the first element portion.
The hysteresis loop of the first free magnetic layer under an external magnetic field perpendicular to the sensitive axis direction of the first element portion is shown in fig. 7. According to fig. 7, the magnetic moment of the first free magnetic layer may not vary with the external magnetic field within the range of the external magnetic field of ±3oe perpendicular to the sensitive axis direction of the first element portion.
The loop of the second free magnetic layer in the second element portion under the external magnetic field perpendicular to the sensitive axis direction of the second element portion is shown in fig. 8. According to fig. 8, the magnetic moment of the first free magnetic layer may not vary with the external magnetic field within the range of the external magnetic field of ±3oe perpendicular to the sensitive axis direction of the second element portion.
The hysteresis loop of the second free magnetic layer under an external magnetic field parallel to the sensitive axis direction of the second element portion is shown in fig. 9. According to fig. 9, the magnetic moment of the first free magnetic layer may linearly vary with the external magnetic field within a range of the external magnetic field of ±5Oe parallel to the sensitive axis direction of the second element portion.
The resistance R of the first element part of the embodiment of the invention can linearly change along with the external magnetic field within the range of +/-3 Oe of the external magnetic field parallel to the sensitive axis direction of the first element part, and H 1 Should be greater than 3Oe.
The second element part including the second reference magnetic layer and the first free magnetic layer of the embodiment of the invention is +/-3 Oe in the direction parallel to the sensitive axis of the second element partThe resistance R of the magnetic field can linearly change along with the external magnetic field in the range of the external magnetic field, and H 2 Should be greater than 3Oe.
In the embodiment of the invention, the non-closed vortex magnetization patterns of the first free magnetic layer and the second free magnetic layer can be realized by adjusting the film surface shapes and the like.
The film surfaces of the first free magnetic layer and the second free magnetic layer are adjusted to enable the shape anisotropy field to be larger than the magnetocrystalline anisotropy field, and the sensitivity directions of the first free magnetic layer and the second free magnetic layer are determined by the shape anisotropy field under the external magnetic field.
Specifically, as shown in fig. 2, in the present embodiment, the first free magnetic layer is elliptical, the long axis is perpendicular to the first direction, and the size is smaller than that of the first reference magnetic layer, and the first free magnetic layer is sensitive to the external magnetic field in the first direction.
The second free magnetic layer is similar to the first free magnetic layer in film shape and elliptical, and has a long axis perpendicular to the second direction and smaller than the second reference magnetic layer.
In an embodiment of the invention, the number of first element portions in the magneto-resistive element is at least one, i.e. not limited to 1, and the number of second element portions is at least one, i.e. not limited to 1. The processing portion is electrically coupled to each of the first element portions and each of the second element portions.
In an embodiment of the present invention, as shown in FIG. 3, the magneto-resistive element includes a first element portion R 1 First element portion R 3 Second element portion R 2 Second element portion R 4 Each first element part comprises 8 first magnetic resistances, each first magnetic resistance is electrically coupled in series, and each first magnetic resistance forms a first element part through series coupling; the first magnetoresistance has a sensitive response under an external magnetic field parallel to the first direction. The second element part comprises a plurality of second magnetic resistances, and each second magnetic resistance forms the second element part through series coupling; the second magnetoresistance has a sensitive response under an external magnetic field parallel to a second direction, wherein the second direction is orthogonal to the first direction. Each firstThe magnetic resistance and the second magnetic resistance are magnetic tunnel junctions, namely the magnetic tunnel junction comprises a reference magnetic layer, a tunneling layer and a free magnetic layer, wherein the top view of the reference magnetic layer is circular, the top view of the free magnetic layer is elliptical, and the minor axis direction of the ellipse is the sensitive axis direction.
In the embodiment of the invention, the first element part R 1 And a second element part R 2 Electrically coupled through the first pad 301 in the processing section 3; first element part R 1 And a second element part R 4 Electrically coupled through a fourth pad 304 in the processing section 3; first element part R 3 And a second element part R 2 Electrically coupled through the second pad 302 in the processing section 3; first element part R 3 And a second element part R 4 Electrically coupled through a third pad 303 in the processing section 3; each first element portion and each second element portion form a wheatstone full bridge configuration. In the zero magnetic field scenario, the first element portion has the same resistance as the second resistance.
In the embodiment of the invention, the number of the first magnetic resistances in the first element part can be a plurality of, and each first magnetic resistance can be coupled into a whole in series and/or in parallel; likewise, the number of second magnetic resistances in the second element portion may be plural, and each of the second magnetic resistances may be coupled in series and/or parallel to be integrated.
In the embodiment of the invention, the included angle between the sensitive direction of the first magnetic resistance and the sensitive direction of the second magnetic resistance is a right angle. The included angle may be acute or obtuse in other application scenarios, which is not limited herein.
In an embodiment of the present invention, the first element portion is in a wheatstone full bridge structure, the second element portion is also in a wheatstone full bridge structure, and the processing portion is electrically coupled to the first element portion and the second element portion. The processing part can timely know information such as the angle of the external magnetic field according to the output conditions of the first element part and the second element part.
The magneto-resistive element of the embodiment of the invention can be used for measuring any external magnetic field in a plane and other application scenes related to the magnetic field.
A second aspect of the embodiments of the present invention provides a method for manufacturing a magnetoresistive element. The magneto-resistive element is the magneto-resistive element described above. Specifically, the preparation method comprises the following steps:
step S100, providing a substrate;
step S200, sequentially depositing a bottom electrode layer film, a reference magnetic layer film, a tunneling layer film, a free magnetic layer film and a top electrode layer film on a substrate to obtain a first magnetic stack;
step S300, magnetic stack flow sheets are subjected to magnetic stack to obtain a magneto-resistance element with a first element part and a second element part; the first element part is provided with a round first reference magnetic layer and an elliptic first free magnetic layer; the second element portion has a circular second reference magnetic layer and an elliptical second free magnetic layer.
It should be understood that the first element portion includes a plurality of first magnetic resistances, the second element portion includes a plurality of second magnetic resistances, each of the first magnetic resistances and each of the second magnetic resistances includes a bottom electrode layer, a reference magnetic layer, a tunneling layer, a free magnetic layer, and a top electrode layer from bottom to top. The first magnetic resistance and the second magnetic resistance are provided with at least different free magnetic layers, and the long axis direction of the free magnetic layer of the first magnetic resistance is orthogonal to the long axis direction of the free magnetic of the second magnetic resistance.
A third aspect of embodiments of the present invention provides a magnetoresistive sensor. The magnetoresistive sensor includes a magnetoresistive element; the magneto-resistive element is the magneto-resistive element described above, or a magneto-resistive element produced by the production method described above.
In one embodiment of the invention, the magnetoresistive sensor is used for in-plane external magnetic field measurement. The magnetic field direction of the external magnetic field is parallel to the substrate of the magnetoresistive element.
In an embodiment of the invention, the magneto-resistive sensor is used for measurement of a triaxial magnetic field.
The application scene of the magnetic resistance sensor is not limited to the measurement of a two-axis magnetic field and a three-axis magnetic field, and can be used for magnetic field related scenes such as a magnetic switch.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention provides a magneto-resistance element, a preparation method thereof and a magneto-resistance sensor; the magneto-resistive element comprises a first element part, a second element part and a processing part, wherein the first element part comprises a first reference magnetic layer with a closed vortex magnetization pattern and a first free magnetic layer with a non-closed vortex magnetization pattern; the second element portion includes a second reference magnetic layer having a closed vortex magnetization pattern and a second free magnetic layer having a non-closed vortex magnetization pattern; the processing portion is electrically coupled to the first device portion and the second device portion. The invention limits the structures of the reference magnetic layer and the free magnetic layer in the magnetic resistance element, so that the magnetic resistance element can linearly respond under the magnetic fields of two different magnetic field directions, and the beneficial effects of high sensitivity, simple structure and easy industrialization realization of the device are realized.
It should be understood that the foregoing is illustrative only and is not limiting, and that in specific applications, those skilled in the art may set the invention as desired, and the invention is not limited thereto.
It should be noted that the above-described working procedure is merely illustrative, and does not limit the scope of the present invention, and in practical application, a person skilled in the art may select part or all of them according to actual needs to achieve the purpose of the embodiment, which is not limited herein.
In addition, technical details not described in detail in this embodiment may be referred to the method for manufacturing a magnetoresistive element according to any of the embodiments of the present invention, which is not described herein.
Claims (10)
1. A magnetoresistive element, characterized by comprising:
a first element part including a first reference magnetic layer having a closed vortex magnetization pattern and a first free magnetic layer having a non-closed vortex magnetization pattern for outputting a linearly varying first signal in response to an external magnetic field within a preset magnetic field range parallel to a first direction of the first reference magnetic layer;
a second element section including a second reference magnetic layer having a closed vortex magnetization pattern and a second free magnetic layer having a non-closed vortex magnetization pattern for outputting a linearly varying second signal in response to an external magnetic field within a preset magnetic field range parallel to a second direction of the first reference magnetic layer; the second direction is different from the first direction;
and a processing portion electrically coupled to the first element portion and the second element portion.
2. A magnetoresistive element according to claim 1, characterized in that,
the film surfaces of the first reference magnetic layer and the second reference magnetic layer are circular or elliptical, and the ratio of the major axis to the minor axis is 1-2;
the film surface of the first free magnetic layer is elliptical in shape, the shape anisotropy field is larger than the magnetocrystalline anisotropy field, and the long axis of the first free magnetic layer is perpendicular to the first direction;
the film surface of the second free magnetic layer is elliptical in shape, the shape anisotropy field is larger than the magnetocrystalline anisotropy field, and the long axis of the second free magnetic layer is perpendicular to the second direction.
3. A magnetoresistive element according to claim 2, characterized in that,
the thicknesses of the first reference magnetic layer and the second reference magnetic layer are 30 nm-200 nm, and the length of the long axis is 0.5-15 mu m.
4. A magnetoresistive element according to claim 2 or 3, wherein the first reference magnetic layer comprises a first ferromagnetic layer and a first soft magnetic layer, the first ferromagnetic layer being adjacent to a side of the first free magnetic layer;
the second reference magnetic layer includes a second ferromagnetic layer and a second soft magnetic layer, the second ferromagnetic layer being adjacent to one side of the first reference magnetic layer;
the first soft magnetic layer and the second soft magnetic layer are at least one of permalloy, amorphous alloy or microcrystalline alloy.
5. The magnetoresistive element according to claim 4, wherein the first reference magnetic layer further comprises a first nonmagnetic layer interposed between the first ferromagnetic layer and the first soft magnetic layer;
the second reference magnetic layer further includes a second nonmagnetic layer interposed between the second ferromagnetic layer and the second soft magnetic layer;
the first nonmagnetic layer and the second nonmagnetic layer are made of nonmagnetic materials.
6. The magnetoresistive element according to any of claims 1 to 5, wherein the magnetoresistive element comprises at least one first element portion, at least one second element portion, and the processing portion;
the first element part comprises a plurality of first magnetic resistances, wherein the first magnetic resistances comprise a first bottom electrode layer, the first reference magnetic layer, a first tunneling layer, the first free magnetic layer and a first top electrode layer; each first magnetic resistance is coupled in series or parallel to form the first element part; the first magnetoresistance has a sensitive response under an external magnetic field parallel to the first direction;
the second element part comprises a plurality of second magnetic resistances, wherein the second magnetic resistances comprise a second bottom electrode layer, the second reference magnetic layer, a second tunneling layer, the second free magnetic layer and a second top electrode layer; each second magnetic resistance is coupled in series or parallel to form the second element part; the second magnetoresistance has a sensitive response under an external magnetic field parallel to the second direction.
7. The magnetoresistive element according to claim 6, wherein,
the first magnetic resistance and the second magnetic resistance are magnetic tunnel junctions;
the included angle between the first direction and the second direction is an acute angle, a right angle or an obtuse angle.
8. The magnetoresistive element according to claim 7, wherein,
the included angle between the first direction and the second direction is a right angle;
the first element portion and the second element portion have a Wheatstone full bridge structure.
9. The method for manufacturing a magnetoresistive element according to any of claims 1 to 8, comprising:
providing a substrate;
sequentially depositing a bottom electrode layer film, a reference magnetic layer film, a tunneling layer film, a free magnetic layer film and a top electrode layer film on the substrate to obtain a first magnetic stack;
obtaining a magneto-resistive element having a first element portion and a second element portion on the magnetic stack flow sheet; the first element part is provided with a round first reference magnetic layer and an elliptic first free magnetic layer; the second element portion has a circular second reference magnetic layer and an elliptical second free magnetic layer.
10. A magnetoresistive sensor comprising a magnetoresistive element;
the magneto-resistive element is the magneto-resistive element according to claim 9, or the magneto-resistive element produced by the production method according to any one of claims 1 to 8.
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