CN114937736A - Wide-range TMR sensor tunnel junction and sensor - Google Patents
Wide-range TMR sensor tunnel junction and sensor Download PDFInfo
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Abstract
The invention discloses a wide-range TMR sensor tunnel junction and a sensor, the wide-range TMR sensor tunnel junction comprises a substrate and a sandwich structure body arranged on the substrate, the sandwich structure body comprises a free ferromagnetic layer, an insulating barrier layer and a pinning layer which are sequentially arranged in a laminated manner, the free ferromagnetic layer and the pinning layer have different coercive forces, the free ferromagnetic layer positioned on one side close to the substrate in the sandwich structure body has perpendicular magnetic anisotropy, and the pinning layer positioned on one side far away from the substrate in the sandwich structure body has magnetic anisotropy in a laminated plane; the sensitive bridge arm of the sensor adopts the tunnel junction of the wide-range TMR sensor, and the reference bridge arm adopts the magneto resistance of the horizontal tunnel junction. The TMR sensor aims to solve the problem that a TMR sensor is small in measuring range and difficult to measure a large magnetic field, and has the advantages of being small in size and convenient to process and integrate.
Description
Technical Field
The invention relates to a sensor technology, in particular to a tunnel junction of a wide-range TMR sensor and the sensor.
Background
A tunneling magneto-resistance sensor (TMR) is a magnetic sensitive unit which is constructed by taking a ferromagnetic layer/insulating layer/ferromagnetic layer sandwich tunnel junction as a core, has the characteristics of high sensitivity, low energy consumption, low cost, miniaturization and the like, and is widely applied to the fields of biomedicine, industrial manufacturing, geophysical and aerospace aviation and the like. The magnetic layers on both sides of the tunnel junction insulating barrier layer of the traditional TMR sensor usually adopt a horizontal plane magnetic anisotropy soft magnetic material (in-plane anisotropy material), so that the magnetic layers are under the action of a small external magnetic field (for example, under the action of a small external magnetic field)<100Oe), the resistance of the magnetic tunnel junction changes along with the size of the external magnetic field; but when the external magnetic field exceeds the saturation field of the material (H) s ) The magnetoresistance gradually approaches saturation, so that the change of an external magnetic field can not be sensed any more, and people define the magnetic field range between positive and negative saturation magnetic fields as the working range of the magnetic sensor, or the range. At present, the TMR sensor is limited by the used materials, has the problems of low measuring range and narrow working area, and is difficult to be used in the occasions of measuring stronger magnetic fields. Theoretically, the range of the magnetic sensor can be further improved by searching for a ferromagnetic material of the tunnel junction with high saturation field, but it is difficult to guarantee the tunnel junction with high TMR effect, for example, the only material of the current magnetic tunnel junction with high TMR (about 200%) is CoFeB material; secondly, the tunnel junction range can also beThe method is adjusted by a vertical bias magnetic field, however, the existing method for generating the bias magnetic field is provided by adopting a permanent magnetic material, and the magnetism of the permanent magnetic material can be converted in an unrecoverable manner under a larger external magnetic field environment.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the invention aims to solve the problem that a TMR sensor has a small range and is difficult to measure a large magnetic field, and has the advantages of small volume and convenience in processing and integration.
In order to solve the technical problems, the invention adopts the technical scheme that:
the free ferromagnetic layer positioned on one side close to the substrate in the sandwich structure body has perpendicular magnetic anisotropy, and the pinned layer positioned on one side far away from the substrate in the sandwich structure body has magnetic anisotropy in a lamination plane.
Alternatively, the pinning layer includes a synthetic antiferromagnetic layer and a reference ferromagnetic layer which are laminated and arranged, the synthetic antiferromagnetic layer being composed of a ferromagnetic material film, a nonmagnetic metal material film, a ferromagnetic material film which are laminated and arranged in this order and having a magnetic moment parallel to a lamination plane, both the synthetic antiferromagnetic layer and the reference ferromagnetic layer forming antiferromagnetic coupling so that the reference ferromagnetic layer is pinned.
Optionally, the free ferromagnetic layer is a CoFeB material film, the insulating barrier layer is a metal oxide material film, the synthetic antiferromagnetic layer includes a CoFe material film, a Ru layer, and a CoFe material film which are sequentially stacked, and the reference ferromagnetic layer is a CoFeB material film.
Optionally, a seed layer is disposed between the free ferromagnetic layer and the substrate.
Optionally, the seed layer comprises a Ta layer, a Ru layer, and a Ta layer arranged in sequence.
Optionally, the surface of the pinning layer is sequentially provided with an antiferromagnetic layer and a conductive layer which are arranged in a lamination manner, the antiferromagnetic layer is used for forming exchange coupling with the pinning layer to realize exchange bias, and the magnetic moment orientation of the pinning layer is pinned in a fixed direction.
Alternatively, the antiferromagnetic layer is an IrMn material film or a PtMn material film, the conductive layer includes a Ru layer and a Ta layer which are sequentially stacked, and the Ta layer is located on the side closer to the antiferromagnetic layer.
The invention provides a wide-range TMR sensor which comprises a Wheatstone bridge consisting of two sensitive bridge arms and two reference bridge arms, wherein the sensitive bridge arms and the reference bridge arms have the same magnetic field sensitive direction, the sensitive bridge arms consist of one or a plurality of series-connected sensitive tunnel junctions, the reference bridge arms consist of one or a plurality of series-connected reference tunnel junctions, and the sensitive tunnel junctions are the tunnel junctions of the wide-range TMR sensor.
Optionally, the reference tunnel junction includes a substrate and a sandwich structure body disposed on the substrate, the sandwich structure body includes a free ferromagnetic layer, an insulating barrier layer, and a pinned layer sequentially stacked, the free ferromagnetic layer and the pinned layer have different coercive forces, and the free ferromagnetic layer located on a side close to the substrate and the pinned layer located on a side far from the substrate in the sandwich structure body both have magnetic anisotropy in a stacking plane.
Optionally, the sensitive bridge arm and the reference bridge arm are independent components prepared by micro-nano processing, and the plurality of series-connected sensitive tunnel junctions and the plurality of series-connected reference tunnel junctions are connected in series by wire bonding.
Compared with the prior art, the invention mainly has the following advantages: the free ferromagnetic layer and the pinning layer in the sandwich structure body of the tunnel junction of the wide-range TMR sensor have different coercive forces, and under the action of an external magnetic field, the layer with small coercive force can be firstly turned over to cause the parallel and antiparallel arrangement of the magnetic moments of the two ferromagnetic layers, thereby realizing the change of the high-resistance state and the low-resistance state of the magnetic tunnel junction. The free ferromagnetic layer positioned at one side close to the substrate in the sandwich structure body of the tunnel junction of the wide-range TMR sensor has perpendicular magnetic anisotropy, the pinning layer positioned at one side far away from the substrate has magnetic anisotropy in a lamination plane, and the working range of the TMR sensor can be improved by utilizing the characteristic that the perpendicular anisotropy field of the ultrathin ferromagnetic film has a saturation field larger than that of the in-plane anisotropic magnetic film, thereby achieving the purpose of widening the range (wide range) of the TMR sensor.
Drawings
Fig. 1 is an example of a frame structure for a wide range TMR sensor tunnel junction of the present invention.
FIG. 2 is a schematic view of the magnetic moment orientation of the sandwich structure of the present invention.
Fig. 3 is a detailed structural example of the tunnel junction of the wide-range TMR sensor according to the present invention.
Fig. 4 is an example of a circuit principle of the wide range TMR sensor of the present invention.
Fig. 5 is a detailed structure example of the tunnel junction according to the present invention.
Figure 6 is a response curve for a sensitive tunnel junction in accordance with the present invention.
Fig. 7 is a response curve of a reference tunnel junction in the present invention.
Fig. 8 is an example of an output curve of the wide range TMR sensor of the present invention.
Illustration of the drawings: 1. a substrate; 2. a sandwich structure; 21. a free ferromagnetic layer; 22. an insulating barrier layer; 23. a pinning layer; 231. artificially synthesizing an antiferromagnetic layer; 232. a reference ferromagnetic layer; 3. a seed layer; 4. an antiferromagnetic layer; 5. and a conductive layer.
Detailed Description
As shown in fig. 1 and 2, the present embodiment provides a wide-range TMR sensor tunnel junction, including a substrate 1 and a sandwich structure 2 disposed on the substrate 1, the sandwich structure 2 includes a free ferromagnetic layer 21, an insulating barrier layer 22 and a pinned layer 23 which are sequentially stacked, the free ferromagnetic layer 21 and the pinned layer 23 have different coercive forces, the free ferromagnetic layer 21 located on the substrate side in the sandwich structure 2 has perpendicular (perpendicular to the stacking plane) anisotropy, the pinned layer 23 located on the side away from the substrate side has magnetic anisotropy in the stacking plane, the operating range of the TMR sensor can be improved by using an ultra-thin ferromagnetic thin film perpendicular anisotropy field having a larger saturation field characteristic than an in-plane anisotropy magnetic film, thereby achieving the purpose of widening the range (wide range) of the TMR sensor. Under the zero magnetic field, two magnetic layers of free ferromagnetic layer 21 and pinning layer 23 constitute 90 magnetic moment orientation structure, and under the external magnetic field effect, two-layer magnetic moment changes relatively to the orientation and shows tunnel magnetoresistance effect, owing to adopt perpendicular anisotropic ferromagnetic film as free ferromagnetic layer 21, its range can reach more than kOe, and can further regulate and control perpendicular anisotropy size through controlling the free layer thickness, in order to conveniently realize range control, solve the little problem of traditional TMR sensor working range.
As shown in fig. 3, the pinned layer 23 in the present embodiment includes a Synthetic Antiferromagnetic (SAF) layer 231 and a reference ferromagnetic layer 232 arranged in a stack, the Synthetic Antiferromagnetic layer 231 is composed of a ferromagnetic material film, a nonmagnetic metal material film, a ferromagnetic material film arranged in a stack in this order with their magnetic moments parallel to the stack plane, and both the Synthetic Antiferromagnetic layer 231 and the reference ferromagnetic layer 232 form Antiferromagnetic coupling so that the reference ferromagnetic layer 232 is pinned. Referring to FIG. 3, the substrate 1 is made of silicon and covered with an oxide layer, so it is denoted as "Si/SiOx" in this embodiment.
The free ferromagnetic layer 21 is a ferromagnetic material film and has perpendicular anisotropy, and the film has an equivalent perpendicular anisotropy field of kOe order size by interfacial magnetic anisotropy, and under the action of the perpendicular anisotropy field, without an external magnetic field, its magnetic moment is perpendicular to the film plane (lamination plane). The magnitude of the magnetic anisotropy of the free ferromagnetic layer 21 can be controlled by the thickness of the ferromagnetic material film, which is preferably set at about 1nm, to obtain an optimum TMR value and a high perpendicular anisotropy field. As an alternative embodiment, the free ferromagnetic layer 21 in this embodiment is made of a CoFeB material, and referring to fig. 3, as a specific embodiment, the CoFeB material of the free ferromagnetic layer 21 in this embodiment is Co 20 Fe 60 B 20 Wherein the subscript represents the mass percent of the corresponding element, which mass percent can be as high asAdjusted as necessary, and the thickness X of the free ferromagnetic layer 21 is 1.02 nm. In order to counteract the huge demagnetizing field outside the ferromagnetic material film of the free ferromagnetic layer 21, the perpendicular anisotropy of the ferromagnetic material film can usually reach above several kilo-Oe (kOe), and under the action of the in-plane magnetic field, the magnetic moment of the free ferromagnetic layer 21 is constantly changed, according to the magnetization theory, the saturation magnetic field (Hs) of the free ferromagnetic layer 21 is mainly determined by the equivalent perpendicular anisotropy field, and the saturation magnetic field (Hs) determines the working range of the sensor, which means that the sensor has a better working range than the conventional magnetoresistive sensor.
The reference ferromagnetic layer 232 is a film of ferromagnetic material, for example, as an alternative embodiment, the reference ferromagnetic layer 232 is a film of CoFeB material in this embodiment. Since the magnetic moment of the reference ferromagnetic layer 232 is pinned, the change in magnetoresistive resistance is mainly determined by the rotation of the magnetic moment of the free ferromagnetic layer 21. Referring to FIG. 3, as a specific embodiment, the CoFeB material of the reference ferromagnetic layer 232 in this example is Co 40 Fe 40 B 20 Where the subscripts represent the mass percent of the corresponding element, which can be adjusted as desired, and the reference ferromagnetic layer 232 is 2nm thick.
The insulating barrier layer 22 is a metal oxide material film, the growth quality of the metal oxide directly determines the magnitude of the magnetoresistance effect, and the thickness is usually about 1-3nm to realize a high TMR effect. The metal oxide material may be MgO or AlOx, for example, as an alternative embodiment, the insulation barrier layer 22 is a film of MgO material with a thickness of 2nm in this embodiment.
The synthetic antiferromagnetic layer 231 is composed of a ferromagnetic material film, a nonmagnetic metal material film, and a ferromagnetic material film which are laminated in this order, and by controlling the thickness of the nonmagnetic metal material film in between, it is possible to make the two ferromagnetic material films antiferromagnetically coupled. Wherein the ferromagnetic material film, the nonmagnetic metal material film may adopt desired ferromagnetic materials and nonmagnetic metal materials as required, for example, as an alternative embodiment, the artificial synthetic antiferromagnetic layer 231 in the present embodiment includes a CoFe material film, a Ru layer and a CoFe material film which are sequentially laminated and arranged, see fig. 3, asIn a specific embodiment, Co is used as CoFe material in both CoFe material films of the synthetic antiferromagnetic layer 231 in this embodiment 70 Fe 30 Wherein, the subscript represents the mass percent of the corresponding element, the mass percent can be adjusted according to the requirement, the film thickness of the CoFe material layer at the side close to the substrate 1 is 0.5nm, the film thickness of the other CoFe material layer is 2.5nm, and the film thickness of the Ru layer is 0.85 nm.
As shown in fig. 1, in this embodiment, a seed layer 3 is disposed between the free ferromagnetic layer 21 and the substrate 1, and is used to enhance the bonding force between the magnetic thin film of the free ferromagnetic layer 21 and the substrate 1, increase the thickness of the bottom electrode, and reduce the influence of the resistance of the bottom electrode on magnetoresistance. As shown in fig. 3, the seed layer 3 in the present embodiment includes a Ta layer, a Ru layer, and a Ta layer, which are sequentially stacked, and each have a thickness of 5 nm.
As shown in fig. 1, the surface of the pinned layer 23 in this embodiment is provided with an antiferromagnetic layer 4 and a conductive layer 5 in a laminated arrangement in this order, the antiferromagnetic layer 4 is used for forming exchange coupling with the pinned layer 23 to realize exchange bias, and the magnetic moment orientation of the pinned layer 23 is pinned in a fixed direction, thereby realizing antiferromagnetic pinning. The conductive layer 5 mainly serves as a protection, and serves to prevent the ferromagnetic material film from being oxidized.
The antiferromagnetic layer 4 can be IrMn material film or PtMn material film, as shown in FIG. 3, in this embodiment the antiferromagnetic layer 4 is IrMn material film, and in this embodiment the IrMn material is Ir 80 Mn 20 And a thickness of 8nm, wherein the subscripts indicate the mass percent of the corresponding element, which can be adjusted as desired. The conductive layer 5 includes a Ru layer and a Ta layer arranged in this order in a stacked manner, and the Ta layer is located on the side closer to the antiferromagnetic layer 4, where the Ru layer has a thickness of 5nm and the Ta layer has a thickness of 4 nm.
In addition, the embodiment further provides a wide-range TMR sensor, which includes a wheatstone bridge composed of two sensing bridge arms and two reference bridge arms, where the sensing bridge arms and the reference bridge arms have the same magnetic field sensing direction, the sensing bridge arm is composed of one or multiple series-connected sensing tunnel junctions, the reference bridge arm is composed of one or multiple series-connected reference tunnel junctions, and the sensing tunnel junction is the tunnel junction of the wide-range TMR sensor. Through the wide-range TMR sensor tunnel junction, the problem that the working range of the existing magneto-resistance sensor is small is solved.
The TMR sensor tunnel junction is the core structure of a wide range TMR sensor, including the aforementioned wide range TMR sensor tunnel junction and a reference tunnel junction. Fig. 4 shows an example of a half-bridge circuit of a wheatstone bridge, and referring to fig. 4, in this embodiment, the resistances of two sensitive arms are R1 and R2, respectively, and the resistances of two reference arms are R3 and R4, the half-bridge circuit is powered by an external voltage, the bias voltage is Vcc, and the bridge output is Vout.
As shown in fig. 5, the reference tunnel junction in this embodiment includes a substrate 1 and a sandwich structure 2 provided on the substrate 1, the sandwich structure 2 includes a free ferromagnetic layer 21, an insulating barrier layer 22, and a pinned layer 23 which are sequentially stacked, the free ferromagnetic layer 21 and the pinned layer 23 have different coercive forces, and the free ferromagnetic layer 21 on the substrate-side and the pinned layer 23 on the substrate-away side in the sandwich structure 2 each have magnetic anisotropy in a stacking plane.
Comparing fig. 3 and fig. 5, it can be seen that the laminated structures of the sensitive tunnel junction and the reference tunnel junction in this embodiment are the same, the only difference is that the thickness of the free ferromagnetic layer 21 is different, and by controlling the thickness of the free ferromagnetic layer 21, for example, as an alternative embodiment, see fig. 3, as a specific embodiment, the CoFeB material of the free ferromagnetic layer 21 in this embodiment adopts Co 20 Fe 60 B 20 The thickness of the free ferromagnetic layer 21 in the sensitive tunnel junction is 1.02nm, the thickness of the free ferromagnetic layer 21 in the reference tunnel junction is 1.05nm, so that the sensitive tunnel junction has perpendicular anisotropy (Hk1), the reference tunnel junction has magnetic anisotropy (Hk2) in a lamination plane, and the perpendicular anisotropy (Hk1) is far greater than the magnetic anisotropy (Hk2) in the lamination plane, therefore, under the action of a large external magnetic field, the resistances R1 and R2 of the sensitive bridge arm change along with the external magnetic field, and the reference bridge arm has weakened response to the external magnetic field due to entering a saturation region, so that the whole Wheatstone bridge has obvious response to the external magnetic field.
Because the laminated structures of the sensitive tunnel junction and the reference tunnel junction are completely the same, and the only difference is that the thicknesses of the free ferromagnetic layers 21 are different, when the sensitive tunnel junction and the reference tunnel junction are prepared, the free ferromagnetic layers 21 with different thicknesses can be grown on the same substrate by controlling the magnetron sputtering conditions and the CoFeB film wedge-shaped growth technology, so that the magnetic moments of the free ferromagnetic layers 21 can be continuously regulated and controlled along the in-plane direction of the film or the direction vertical to the film, and the reference tunnel junction or the sensitive tunnel junction is obtained. After the tunnel junction senses the action of an external magnetic field in the sensitive direction, the rotation of the magnetic moment of the free ferromagnetic layer 21 causes the change of an included angle between the magnetic moment and the magnetic moment of the reference ferromagnetic layer 232, so that the change of magnetoresistance occurs; the change law of the magnetoresistance can be changed by changing the rotation plane of the magnetic moment of the free ferromagnetic layer 21. The response curve of the sensitive tunnel junction in this embodiment is shown in FIG. 6, and the response curve of the reference tunnel junction is shown in FIG. 7, which shows a schematic diagram of the magnetic moment directions of the free ferromagnetic layer 21 and the reference ferromagnetic layer 232. Referring to fig. 6 and fig. 7, it can be seen that by changing the thin film structure of the TMR multilayer film structure, the TMR range can be controlled, i.e. by using the two characteristics of magnetoresistive response, a high sensitive stable response to an external magnetic field can be realized by further constructing the sensitive tunnel junction and the reference tunnel junction of the bridge structure. According to the magnetoresistive response performance corresponding to the two magnetic moment configuration conditions in fig. 6 and 7, the film with the perpendicular magnetic moment of the free ferromagnetic layer 21 can be used for preparing a sensitive bridge arm, and the film with the parallel magnetic moment of the free ferromagnetic layer 21 is suitable for preparing a reference bridge arm.
In order to improve the integration level of the wide-range TMR sensor, in this embodiment, the sensitive bridge arm and the reference bridge arm are independent components prepared by micro-nano processing, and the plurality of series-connected sensitive tunnel junctions and the plurality of series-connected reference tunnel junctions are connected in series by wire bonding, so that the TMR sensor has the advantages of small volume and convenience in processing and integration. Preferably, a wiring mode with small inductance can be adopted, for example, a series circuit between the sensitive bridge arm and the reference bridge arm adopts a return-shaped wiring mode to weaken the inductance, widen the line diameter of a loop and the like.
In this embodiment, the sensitive bridge arm and the reference bridge arm have the same magnetic field sensitivity direction, after a forward magnetic field is applied, the resistance value of the reference bridge arm keeps stable along with the increase of the magnetic field, the resistance value of the sensitive bridge arm linearly decreases, and the half-bridge structure generates a voltage output linearly changing along with the magnetic field strength, so as to detect an external magnetic field. According to the response curve in the figure, the test of the unidirectional magnetic field in the range of 3000 oersted can be realized, and it can be seen that the scheme design of the wide-range TMR sensor in the embodiment can well realize the induction of the magnetic field in the range of 3000 oersted, which means that the scheme of the wide-range TMR sensor in the embodiment can be used for realizing the large magnetic field measurement.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (10)
1. The wide-range TMR sensor tunnel junction comprises a substrate (1) and a sandwich structure body (2) arranged on the substrate (1), and is characterized in that the sandwich structure body (2) comprises a free ferromagnetic layer (21), an insulating barrier layer (22) and a pinning layer (23) which are sequentially arranged in a stacked mode, the free ferromagnetic layer (21) and the pinning layer (23) have different coercive forces, the free ferromagnetic layer (21) located on the side close to the substrate in the sandwich structure body (2) has vertical anisotropy, and the pinning layer (23) located on the side far away from the substrate in the sandwich structure body (2) has magnetic anisotropy in a stacking plane.
2. The wide-range TMR sensor tunnel junction according to claim 1, wherein the pinned layer (23) comprises a synthetic antiferromagnetic layer (231) and a reference ferromagnetic layer (232) which are laminated arrangement, the synthetic antiferromagnetic layer (231) being composed of a ferromagnetic material film, a nonmagnetic metal material film, a ferromagnetic material film which are laminated arrangement in this order and having a magnetic moment thereof parallel to a lamination plane, both the synthetic antiferromagnetic layer (231) and the reference ferromagnetic layer (232) forming antiferromagnetic coupling so that the reference ferromagnetic layer (232) is pinned.
3. The wide-range TMR sensor tunnel junction according to claim 2, wherein the free ferromagnetic layer (21) is a CoFeB material film, the insulating barrier layer (22) is a metal oxide material film, the synthetic antiferromagnetic layer (231) comprises a CoFe material film, a Ru layer and a CoFe material film which are sequentially laminated, and the reference ferromagnetic layer (232) is a CoFeB material film.
4. A wide range TMR sensor tunnel junction according to claim 1, with a seed layer (3) between the free ferromagnetic layer (21) and the substrate (1).
5. A wide range TMR sensor tunnel junction according to claim 4, the seed layer (3) comprising a Ta layer, a Ru layer and a Ta layer arranged in sequence one above the other.
6. A wide range TMR sensor tunnel junction according to claim 4, the surface of the pinned layer (23) being provided in sequence with an antiferromagnetic layer (4) and a conductive layer (5) arranged in a stack, the antiferromagnetic layer (4) being for exchange coupling with the pinned layer (23) to effect exchange bias, the orientation of the magnetic moment of the pinned layer (23) being pinned in a fixed direction.
7. A wide range TMR sensor tunnel junction according to claim 6, the antiferromagnetic layer (4) being a film of IrMn material or a film of PtMn material, the conductive layer (5) comprising a Ru layer and a Ta layer arranged in this order in a laminated manner, and the Ta layer being located on the side against the antiferromagnetic layer (4).
8. A wide-range TMR sensor comprises a Wheatstone bridge consisting of two sensitive bridge arms and two reference bridge arms, and is characterized in that the sensitive bridge arms and the reference bridge arms have the same magnetic field sensitive direction, each sensitive bridge arm consists of one or a plurality of series-connected sensitive tunnel junctions, each reference bridge arm consists of one or a plurality of series-connected reference tunnel junctions, and each sensitive tunnel junction is the tunnel junction of the wide-range TMR sensor according to any one of claims 1 to 7.
9. A wide-range TMR sensor according to claim 8, wherein the reference tunnel junction comprises a substrate (1) and a sandwich structure (2) provided on the substrate (1), wherein the sandwich structure (2) comprises a free ferromagnetic layer (21), an insulating barrier layer (22) and a pinned layer (23) which are sequentially stacked, the free ferromagnetic layer (21) and the pinned layer (23) having different coercive forces, and the free ferromagnetic layer (21) on the substrate side and the pinned layer (23) on the substrate side in the sandwich structure (2) each have magnetic anisotropy in a lamination plane.
10. The wide-range TMR sensor of claim 9, wherein the sensitive bridge arm and the reference bridge arm are independent components manufactured by micro-nano processing, and the plurality of series-connected sensitive tunnel junctions and the plurality of series-connected reference tunnel junctions are connected in series by wire bonding.
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| CN115236568A (en) * | 2022-09-23 | 2022-10-25 | 南方电网数字电网研究院有限公司 | Wide-range vertical sensitive magnetic sensor based on magnetic flux regulator and preparation method thereof |
| CN115542207A (en) * | 2022-09-22 | 2022-12-30 | 江苏多维科技有限公司 | Magnetic resistance structure and single-axial measurement magnetic sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020186514A1 (en) * | 2001-06-08 | 2002-12-12 | Childress Jeffrey R. | Tunnel valve flux guide structure formed by oxidation of pinned layer |
| US20050117392A1 (en) * | 2003-10-10 | 2005-06-02 | Jun Hayakawa | Magnetic nonvolatile memory cell and magnetic random access memory using the same |
-
2022
- 2022-05-07 CN CN202210492358.5A patent/CN114937736B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020186514A1 (en) * | 2001-06-08 | 2002-12-12 | Childress Jeffrey R. | Tunnel valve flux guide structure formed by oxidation of pinned layer |
| US20050117392A1 (en) * | 2003-10-10 | 2005-06-02 | Jun Hayakawa | Magnetic nonvolatile memory cell and magnetic random access memory using the same |
Non-Patent Citations (1)
| Title |
|---|
| 王天兴;李超;夏存军;杨海刚;宋桂林;常方高;: "成份依赖的软磁材料CoFeB和CoFeSiB", 河南师范大学学报(自然科学版), no. 06, 15 November 2010 (2010-11-15) * |
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| CN115542207A (en) * | 2022-09-22 | 2022-12-30 | 江苏多维科技有限公司 | Magnetic resistance structure and single-axial measurement magnetic sensor |
| CN115542207B (en) * | 2022-09-22 | 2023-10-31 | 江苏多维科技有限公司 | Magnetoresistive structure and uniaxial measuring magnetic sensor |
| CN115236568A (en) * | 2022-09-23 | 2022-10-25 | 南方电网数字电网研究院有限公司 | Wide-range vertical sensitive magnetic sensor based on magnetic flux regulator and preparation method thereof |
| CN115236568B (en) * | 2022-09-23 | 2023-01-20 | 南方电网数字电网研究院有限公司 | Wide-range vertical sensitive magnetic sensor based on magnetic flux regulator and preparation method thereof |
| US11953568B1 (en) | 2022-09-23 | 2024-04-09 | Digital Grid Res. Inst., China Southern Pwr. Grid | Wide-range perpendicular sensitive magnetic sensor and method for manufacturing the same |
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