CN115542207A - Magnetic resistance structure and single-axial measurement magnetic sensor - Google Patents
Magnetic resistance structure and single-axial measurement magnetic sensor Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 236
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- 230000005290 antiferromagnetic effect Effects 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
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- 239000011241 protective layer Substances 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 230000005641 tunneling Effects 0.000 claims description 6
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- 238000010586 diagram Methods 0.000 description 7
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- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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Abstract
The invention relates to the technical field of sensors, and provides a magneto-resistance structure and a single-axial measurement magnetic sensor, which comprise: the magnetic tunnel junction structure comprises a first magnetic tunnel junction structure and a second magnetic tunnel junction structure, wherein the first magnetic tunnel junction structure is arranged on the second magnetic tunnel junction structure, or the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are arranged separately; the first magnetic tunnel junction structure comprises a first bias layer, and the second magnetic tunnel junction structure comprises a second bias layer; the bias direction of the first bias layer and the bias direction of the second bias layer are parallel to the plane of the film layer, perpendicular to the axial direction to be measured and anti-parallel to each other; the magnetic tunnel junction structure is disposed between the bottom electrode and the top electrode. The technical problem that in the direction parallel to the plane of a device film layer, the magnetic field size in the axial direction to be measured is difficult to accurately reflect due to the interference of corresponding magnetic field components generated by other axial directions perpendicular to the axial direction to be measured in the prior art is solved.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a magneto-resistance structure and a single-axial measurement magnetic sensor.
Background
The working principle of the existing MTJ magnetic sensor is that when a magnetic field passes through the free layer, the spin magnetic moment of electrons in the free layer deflects, the magnetic moment of electrons in the free layer deflects along with the magnetic field with different strength in the easy axis direction, and a certain included angle is formed between the magnetic moment and the magnetic moment direction of the pinned layer, so that corresponding resistance is presented to the outside. The resistance presented to the outside is the largest when the direction of the magnetic moment of the free layer is antiparallel to the direction of the magnetic moment of the pinned layer, and the resistance presented to the outside is the smallest when the directions are parallel.
In some application scenarios, however, it is desirable to measure the magnitude of the magnetic field in a particular direction. Many times, however, the magnetic field direction is not exactly along the axial direction to be measured. This causes corresponding magnetic field components to be generated in other axial directions perpendicular to the axial direction to be measured, and these other axial magnetic field components may shift the working point of the MTJ, which causes the sensitivity of the MTJ to shift, the linearity to change, the saturation field to change, and so on, resulting in inaccurate measurement results of the sensor. Based on the basic characteristics of the MTJ device, the magnetic field component perpendicular to the film plane of the MTJ device does not cause the MTJ device to reach a saturation state, mainly in the direction parallel to the film plane of the MTJ device, and the magnetic field component perpendicular to the axial direction to be measured can affect the state of the MTJ device.
In the direction parallel to the plane of the film layer of the device, the magnetic sensor in the prior art is difficult to accurately reflect the size of the magnetic field in the axial direction to be measured due to the interference of corresponding magnetic field components generated in other axial directions perpendicular to the axial direction to be measured.
Disclosure of Invention
The invention aims to provide a magneto-resistance structure and a single-axial measurement magnetic sensor, and solves the technical problem that in the prior art, in the direction parallel to the plane of a device film layer, the magnetic field size in the axial direction to be measured is difficult to accurately reflect due to the interference of corresponding magnetic field components generated in other axial directions perpendicular to the axial direction to be measured.
In a first aspect, an embodiment of the present invention provides a magnetoresistive structure, including: the magnetic tunnel junction structure comprises a first magnetic tunnel junction structure and a second magnetic tunnel junction structure, wherein the first magnetic tunnel junction structure is arranged on the second magnetic tunnel junction structure, or the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are arranged separately; a bias layer is arranged in the magnetic tunnel junction structure, the bias layer comprises a first bias layer and a second bias layer, the first magnetic tunnel junction structure comprises the first bias layer, and the second magnetic tunnel junction structure comprises the second bias layer; the bias direction of the first bias layer and the bias direction of the second bias layer are parallel to the plane of the film layer, perpendicular to the axial direction to be measured and anti-parallel to each other; the magnetic tunnel junction structure is grown between the bottom electrode and the top electrode.
Further, when the first magnetic tunnel junction structure is arranged on the second magnetic tunnel junction structure, the first magnetic tunnel junction structure is connected with the second magnetic tunnel junction structure in series on a measuring circuit; the first magnetic tunnel junction structure sequentially comprises a pinning layer structure, a first barrier layer, a first free layer and a first bias layer in the direction far away from the second magnetic tunnel junction structure; the second magnetic tunnel junction structure sequentially comprises a pinning layer structure, a second barrier layer, a second free layer and a second bias layer in the direction far away from the first magnetic tunnel junction structure; the pinned layer structure and the first free layer form a tunneling effect of the first magnetic tunnel junction structure and the second free layer form a tunneling effect of the second magnetic tunnel junction structure.
Further, the pinning layer structure includes a first pinning layer and a second pinning layer, and a metal layer is disposed between the first pinning layer and the second pinning layer; one surface of the first pinning layer is in contact with the metal layer, and the other surface of the first pinning layer is in contact with the first barrier layer; one side of the second pinning layer is in contact with the metal layer, and the other side of the second pinning layer is in contact with the second barrier layer.
Further, when the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are separately arranged, on a measurement circuit, the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are connected in series or in parallel; the first magnetic tunnel junction structure comprises a first pinning layer, a first barrier layer, a first free layer and a first bias layer, and the second magnetic tunnel junction structure comprises a second pinning layer, a second barrier layer, a second free layer and a second bias layer.
Further, the structure of the bias layer is divided into four types, including a first type structure of the bias layer, a second type structure of the bias layer, a third type structure of the bias layer, and a fourth type structure of the bias layer.
Further, the bias layer first type structure is a second ferromagnetic layer, an isolation layer, a first ferromagnetic layer, and an antiferromagnetic layer sequentially arranged in a direction away from the magnetic tunnel junction structure.
Further, the bias layer second type structure is a ferromagnetic layer and an antiferromagnetic layer sequentially arranged in a direction away from the magnetic tunnel junction structure.
Further, the bias layer third type structure is a ferromagnetic layer and a permanent magnetic layer sequentially arranged in a direction away from the magnetic tunnel junction structure.
Further, the bias layer fourth type structure is a permanent magnetic layer disposed in a direction away from the magnetic tunnel junction structure.
Further, the structure of the first bias layer is any one of the first type structure of the bias layer, the second type structure of the bias layer, the third type structure of the bias layer, and the fourth type structure of the bias layer; and the structure of the second bias layer is any one of the first type structure of the bias layer, the second type structure of the bias layer, the third type structure of the bias layer and the fourth type structure of the bias layer.
Further, the device comprises a seed layer, wherein the seed layer is arranged on the bottom electrode, and the magnetic tunnel junction structure is arranged on the seed layer.
Further, the device comprises a protective layer, wherein the protective layer is arranged on the magnetic tunnel junction structure, and the top electrode is arranged on the protective layer.
In a second aspect, an embodiment of the present invention further provides a single-axis measurement magnetic sensor, including the magnetoresistive structure described in the previous item, where several of the magnetoresistive structures are connected in series or in parallel.
The embodiment of the invention at least has the following technical effects:
the embodiment of the invention provides a magnetic resistance structure and a single-axial measurement magnetic sensor, wherein the magnetic resistance structure comprises a first magnetic tunnel junction structure and a second magnetic tunnel junction structure, the first magnetic tunnel junction structure comprises a first bias layer, and the second magnetic tunnel junction structure comprises a second bias layer; the bias direction of the first bias layer is opposite to the bias direction of the second bias layer, is parallel to the film layer, and is vertical to the direction of the magnetic field to be measured. The first bias layer and the second bias layer shield most of external magnetic fields, the measuring range of the magnetic sensor is enlarged, the magnetic tunnel junction is not easy to reach a magnetic saturation state, and the magnetic sensor can more accurately reflect the strength of the strong magnetic field to be measured. The purpose of utilizing the bias layers of the symmetrically arranged antiparallel magnetic moments to counteract the interference of the magnetic field component perpendicular to the measuring axial direction on the magnetic sensor is achieved, and the technical effect that the single-axial measuring magnetic sensor can accurately reflect the component size of the measured magnetic field in the measuring axial direction is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a first embodiment of a magnetoresistive structure according to an embodiment of the invention;
FIG. 2 is a diagram of a second embodiment of a magnetoresistive structure according to an embodiment of the invention;
FIG. 3 is a diagram of a magnetoresistive structure according to a third embodiment of the present invention;
FIG. 4 is a schematic diagram of a first type of structure of a bias layer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a second type of structure for a bias layer provided in an embodiment of the present invention;
FIG. 6 is a schematic diagram of a third type of structure of a bias layer according to an embodiment of the present invention;
FIG. 7 is a diagram illustrating a fourth type of structure of a bias layer according to an embodiment of the present invention.
An icon: 1-a magnetoresistive structure; 11-a first magnetic tunnel junction structure; 12-a second magnetic tunnel junction structure; 21-a bottom electrode; 22-a top electrode; 31-a seed layer; 41-a protective layer; 100-a pinned layer structure; 111-a first bias layer; 112-a first free layer; 113-a first barrier layer; 114 — a first pinned layer; 121-a second bias layer; 122-a second free layer; 123-a second barrier layer; 124-a second pinned layer; 130-a metal layer; 101-bias layer first type structure; 102-bias layer second type structure; 103-bias layer third type structure; 104-bias layer fourth type structure; 1001-ferromagnetic layer; 1002-an antiferromagnetic layer; 1003-permanent magnetic layer; 1011-a first ferromagnetic layer; 1012-a second ferromagnetic layer; 1013-isolating layer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
In a first aspect, referring to fig. 1 to 3, an embodiment of the invention provides a magnetoresistive structure, including: a magnetic tunnel junction structure, the magnetic tunnel junction structure comprising a first magnetic tunnel junction structure 11 and a second magnetic tunnel junction structure 12, as shown in fig. 1, when the first magnetic tunnel junction structure 11 is disposed on the second magnetic tunnel junction structure 12, on the measurement circuit, the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 are connected in series; or when the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 are separately arranged as shown in fig. 2, the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 are connected in series or in parallel on the measurement circuit.
Specifically, a bias layer is disposed in the magnetic tunnel junction structure, the bias layer includes a first bias layer 111 and a second bias layer 121, the first magnetic tunnel junction structure 11 includes the first bias layer 111, and the second magnetic tunnel junction structure 12 includes the second bias layer 121. Taking fig. 1 as an example, when the axis to be measured is on the Y axis, the bias directions of the first bias layer 111 and the second bias layer 121 are both on the X axis and are anti-parallel to each other. A bottom electrode 21 and a top electrode 22, and a magnetic tunnel junction structure is disposed between the bottom electrode 21 and the top electrode 22.
The magnetoresistance structure 1 provided by the invention utilizes the bias layers with the symmetrically arranged antiparallel magnetic moments to counteract the interference of the magnetic field component vertical to the axial direction to be measured on the magnetic sensor. Assuming that the resistance expression of the magnetic tunnel junction is R = R 0 + A + H, wherein R 0 Is a constant number of times, and is,a is the sensitivity coefficient, and H is the measured magnetic field. The first magnetic tunnel junction structure and the second magnetic tunnel junction structure are connected in series, when only one bias layer is arranged in the magneto-resistor structure 1, when a magnetic field exists along the magnetic moment direction of the bias layer, the sensitivity is reduced, and at the moment, the resistance of the magneto-resistor structure 1 is R 1 ＝2R 0 + (2A-a) H, sensitivity increases when a magnetic field is applied in a direction opposite to the direction of the magnetic moment of the bias layer, where R 1 ＝2R 0 + (2A + a) H, all result in inaccurate measurements; only when two bias layers with opposite magnetic moment directions are arranged in the magnetoresistive structure 1, the sensitivity remains unchanged when there is a magnetic field along the magnetic moment directions (or opposite directions) of the bias layers, i.e.:
R 1 ＝2R 0 +(A-a)*H+(A+a)*H＝2R 0 +2A × H, the parameter of influence "a" of the magnetic field component perpendicular to the axial direction to be measured on the sensitivity coefficient is eliminated in series connection.
Assuming that the resistance expression of the magnetic tunnel junction is R = 1/(G) 0 + A × H), wherein G 0 Is constant, A is sensitivity coefficient, and H is measured magnetic field. When two bias layers with opposite magnetic moment directions are arranged in the magnetoresistive structure 1, when a magnetic field exists along the magnetic moment direction (or the opposite direction) of the bias layers, the sensitivity is kept unchanged, namely:
R 1 ＝1/[G 0 +(A-a)*H+G 0 +(A+a)*H]＝1/(2G 0 +2a × h), and the parameter of the influence "a" of the magnetic field component perpendicular to the axial direction to be measured on the sensitivity coefficient is eliminated in parallel.
The bias layer with the antiparallel magnetic moment can offset the magnetic field component perpendicular to the axial direction to be measured, so that the magnetic tunnel junction in the magneto-resistance structure 1 is not easily influenced by the magnetic field component, the measurement range is enlarged, the original sensitivity of the device is not influenced, and the stability of the device is ensured.
Example 1
Referring to fig. 1, when the first magnetic tunnel junction structure 11 is disposed on the second magnetic tunnel junction structure 12, the first magnetic tunnel junction structure 11 is connected in series with the second magnetic tunnel junction structure 12 on the measurement circuit; the first magnetic tunnel junction structure 11 sequentially comprises a pinning layer structure 100, a first barrier layer 113, a first free layer 112 and a first bias layer 111 in the direction far away from the second magnetic tunnel junction structure 12, and the second magnetic tunnel junction structure 12 sequentially comprises the pinning layer structure 100, a second barrier layer 123, a second free layer 122 and a second bias layer 121 in the direction far away from the first magnetic tunnel junction structure 11; the pinned layer structure 100 and the first free layer 112 form a tunneling effect of the first magnetic tunnel junction structure 11, and the pinned layer structure 100 and the second free layer 122 form a tunneling effect of the second magnetic tunnel junction structure 12.
Optionally, the magnetoresistive structure 1 includes a seed layer 31, the seed layer 31 is disposed on the bottom electrode 21, and the magnetic tunnel junction structure is disposed on the seed layer 31. The role of the seed layer 31 is twofold: on one hand, the film is used for enhancing the bonding force between the film and the substrate, and inducing the magnetic layer to easily form specific orientation, thereby being beneficial to the magnetoresistance effect; on the other hand, the thickness of the bottom electrode 21 is increased, the electrical characteristics of the multilayer film are increased, and the influence of the resistance of the bottom electrode on the magnetoresistance is reduced.
Optionally, the magnetoresistive structure 1 comprises a protective layer 41, the protective layer 41 being disposed on the magnetic tunnel junction structure, and the top electrode 22 being disposed on the protective layer 41.
In this embodiment, the magnetoresistive structure 1 includes, from bottom to top, a bottom electrode 21, a seed layer 31, a second bias layer 121, a second free layer 122, a second barrier layer 123, a pinning layer structure 100, a first barrier layer 113, a first free layer 112, a first bias layer 111, a protection layer 41, and a top electrode 22.
Example 2
Referring to fig. 2, in this embodiment, a modification is made to the pinning layer structure 100 based on embodiment 1, where the pinning layer structure 100 includes a first pinning layer 114 and a second pinning layer 124, and a metal layer 130 is disposed between the first pinning layer 114 and the second pinning layer 124; one side of the first pinning layer 114 is in contact with the metal layer 130, and the other side is in contact with the first barrier layer 113; one side of the second pinning layer 124 is in contact with the metal layer 130 and the other side is in contact with the second barrier layer 123.
In this embodiment, the metal layer 130 is disposed, and after the upper surface of the metal layer 130 is polished, the first pinning layer 114 is disposed, so that the influence of the unevenness generated by the growth of the lower film on the performance of the upper film can be eliminated. The first pinning layer 114, the first barrier layer 113, the first free layer 112 and the first bias layer 111 form a first magnetic tunnel junction structure 11, the second bias layer 121, the second pinning layer 124, the second barrier layer 123, the second free layer 122 and the second bias layer 121 form a second magnetic tunnel junction structure 12, and the metal layer 130 connects the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 in series.
Example 3
Referring to fig. 3, when the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 are separately disposed, the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 are connected in series or in parallel on the measurement circuit. The first magnetic tunnel junction structure 11 includes a first pinning layer 114, a first barrier layer 113, a first free layer 112, and a first bias layer 111, and the second magnetic tunnel junction structure 12 includes a second pinning layer 124, a second barrier layer 123, a second free layer 122, and a second bias layer 121, and the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 are connected in series. The first and second magnetic tunnel junction structures 11 and 12 are disposed between the bottom and top electrodes 21 and 22.
Optionally, the magnetoresistive structure 1 includes a seed layer 31 and a protective layer 41.
In this embodiment, the series connection or the parallel connection of the first magnetic tunnel junction structure 11 and the second magnetic tunnel junction structure 12 can be realized by the interconnection between the bottom electrode 21 and the top electrode 22.
In the second aspect, referring to fig. 4 to fig. 7, optionally, the structure of the bias layer provided in the embodiment of the present invention includes four types, including a bias layer first type structure 101, a bias layer second type structure 102, a bias layer third type structure 103, and a bias layer fourth type structure 104, and any one of the structures may be implemented to set the bias direction of the bias layer to a specific direction.
Alternatively, the bias layer first type structure 101 is a second ferromagnetic layer 1012, a spacer layer 1013, a first ferromagnetic layer 1011, and an antiferromagnetic layer 1002 sequentially arranged in a direction away from the magnetic tunnel junction structure.
In this embodiment, the antiferromagnetic layer 1002 and the first ferromagnetic layer 1011 form an exchange bias, and the magnetic moment orientation of the first ferromagnetic layer 1011 is fixed by the exchange bias. The first ferromagnetic layer 1011 and the second ferromagnetic layer 1012 are coupled by RKKY interaction to form a whole, and the thickness of the spacer 1013 in the middle determines the ferromagnetic coupling or antiferromagnetic coupling between the first ferromagnetic layer 1011 and the second ferromagnetic layer 1012.
Specifically, the thickness of the spacer layer 1013 is controlled such that the first ferromagnetic layer 1011 and the second ferromagnetic layer 1012 form an antiferromagnetic coupling therebetween, and the magnetic moment directions of the first ferromagnetic layer 1011 and the second ferromagnetic layer 1012 tend to be aligned antiparallel; the thickness of the spacer layer 1013 is controlled such that the first ferromagnetic layer 1011 and the second ferromagnetic layer 1012 form a ferromagnetic coupling therebetween, and the magnetic moments of the first ferromagnetic layer 1011 and the second ferromagnetic layer 1012 tend to align in parallel.
When the first biasing layer 111 is the biasing layer first type structure 101, one side of the second ferromagnetic layer 1012 contacts the first free layer 112, and the other side of the second ferromagnetic layer 1012 contacts the spacer layer 1013; alternatively, when the second biasing layer 121 is the biasing layer first type structure 101, one side of the second ferromagnetic layer 1012 contacts the second free layer 122, and the other side of the second ferromagnetic layer 1012 contacts the spacer layer 1013.
Alternatively, the biasing layer second type structure 102 is a ferromagnetic layer 1001 and an antiferromagnetic layer 1002 sequentially disposed in a direction away from the magnetic tunnel junction structure.
In this embodiment, after the magnetic moment direction of the ferromagnetic layer 1001 is controlled by the annealing process, the magnetic moment orientation of the ferromagnetic layer 1001 is fixed by the exchange bias of the antiferromagnetic layer 1002 and the ferromagnetic layer 1001. When first biasing layer 111 is biasing layer second type structure 102, one side of ferromagnetic layer 1001 contacts first free layer 112, and the other side of ferromagnetic layer 1001 contacts antiferromagnetic layer 1002; or, when the second biasing layer 121 is the biasing layer second type structure 102, one side of the ferromagnetic layer 1001 contacts the second free layer 122, and the other side of the ferromagnetic layer 1001 contacts the antiferromagnetic layer 1002.
Alternatively, the biasing layer third type structure 103 is a ferromagnetic layer 1001 and a permanent magnetic layer 1003 sequentially arranged in a direction away from the magnetic tunnel junction structure.
In this embodiment, the magnetic moment orientation of the ferromagnetic layer 1001 is fixed by the exchange bias and stray field coupling of the permanent magnetic layer 1003 and the ferromagnetic layer 1001. When the first bias layer 111 is the bias layer third type structure 103, one side of the ferromagnetic layer 1001 contacts the first free layer 112, and the other side of the ferromagnetic layer 1001 contacts the permanent magnetic layer 1003; or, when the second bias layer 121 is the bias layer third type structure 103, one side of the ferromagnetic layer 1001 contacts the second free layer 122 and the other side of the ferromagnetic layer 1001 contacts the permanent magnetic layer 1003.
Optionally, the bias layer fourth type structure 104 is a permanent magnetic layer 1003 arranged in a direction away from the magnetic tunnel junction structure.
In this embodiment, the inherent property of the permanent magnetic material is utilized, and the magnetic moment direction of the permanent magnetic layer 1003 is the bias direction of the bias layer. When the first bias layer 111 is the bias layer fourth type structure 104, the permanent magnetic layer 1003 contacts the first free layer 112; alternatively, when the second bias layer 121 is the bias layer fourth type structure 104, the permanent magnetic layer 1003 contacts the second free layer 122.
Optionally, the structure of the first bias layer 111 is any one of a bias layer first type structure 101, a bias layer second type structure 102, a bias layer third type structure 103, and a bias layer fourth type structure 104; the structure of the second bias layer 121 is any one of the bias layer first type structure 101, the bias layer second type structure 102, the bias layer third type structure 103, and the bias layer fourth type structure 104.
In this embodiment, when the first bias layer 111 is the bias layer first type structure 101, the second bias layer 121 may be the bias layer first type structure 101, or the bias layer second type structure 102, or the bias layer third type structure 103, or the bias layer fourth type structure 104; when the first bias layer 111 is the bias layer second type structure 102, the second bias layer 121 may be the bias layer first type structure 101, or the bias layer second type structure 102, or the bias layer third type structure 103, or the bias layer fourth type structure 104; when the first bias layer 111 is the bias layer third type structure 103, the second bias layer 121 may be the bias layer first type structure 101, or the bias layer second type structure 102, or the bias layer third type structure 103, or the bias layer fourth type structure 104; when the first bias layer 111 is the bias layer fourth type structure 104, the second bias layer 121 may be the bias layer first type structure 101, or the bias layer second type structure 102, or the bias layer third type structure 103, or the bias layer fourth type structure 104; two-by-two combinations may have different combination results in 16 as long as it is ensured that the bias direction of the first bias layer 111 is opposite to the bias direction of the second bias layer 121.
For example, when the first bias layer 111 and the second bias layer 121 are both the bias layer first type structure 101, the thickness of the spacer layer 1013 in the first bias layer 111 is controlled such that the magnetic moments between the first ferromagnetic layer 1011 in the first bias layer 111 and the second ferromagnetic layer 1012 in the first bias layer 111 are opposite, and the magnetic moment of the second ferromagnetic layer 1012 in the first bias layer 111 is the bias direction of the first bias layer 111; controlling the thickness of the spacer layer 1013 in the second bias layer 121 such that the magnetic moments of the first ferromagnetic layer 1011 in the second bias layer 121 and the second ferromagnetic layer 1012 in the second bias layer 121 are communicated, wherein the magnetic moment of the second ferromagnetic layer 1012 in the second bias layer 121 is the bias direction of the second bias layer 121; the direction of the magnetic moment of the second ferromagnetic layer 1012 in the first bias layer 111 is made opposite to the direction of the magnetic moment of the second ferromagnetic layer 1012 in the second bias layer 121, i.e., the bias direction of the first bias layer 111 is made opposite to the bias direction of the second bias layer 121.
For another example, when the first bias layer 111 and the second bias layer 121 are both bias layer fourth type structures 104, the coercivity of the permanent magnet layer in the first bias layer 111 is set to be greater than the coercivity of the permanent magnet layer in the second bias layer 121, and in the manufacturing process, the magnetic moments of the two permanent magnet layers are set to be in the same direction, and the applied magnetic field is greater than the coercivity of the permanent magnet layer in the second bias layer 121 and smaller than the coercivity of the permanent magnet layer in the first bias layer 111, so that the magnetic moment direction of the permanent magnet layer in the first bias layer 111 is unchanged, but the magnetic moment direction of the permanent magnet layer in the second bias layer 121 is opposite to the original direction, that is, the bias direction of the first bias layer 111 is opposite to the bias direction of the second bias layer 121.
In a second aspect, the embodiment of the present invention further provides a single-axis measurement magnetic sensor, including the magnetoresistive structure 1 of the preceding clause, where several magnetoresistive structures 1 are connected in series or in parallel. In the single-axial measurement magnetic sensor in this embodiment, the purpose of offsetting the interference of the magnetic field component perpendicular to the measurement axial direction to the magnetic sensor by the bias layers of the symmetrically arranged antiparallel magnetic moments is utilized, so as to achieve the technical effect of accurately reflecting the component size of the measured magnetic field in the axial direction to be measured.
Those of skill in the art will appreciate that various operations, methods, steps in the processes, acts, or solutions discussed in the present application may be alternated, modified, combined, or deleted. Further, various operations, methods, steps in the flows, which have been discussed in the present application, may be interchanged, modified, rearranged, decomposed, combined, or eliminated. Further, steps, measures, schemes in the various operations, methods, procedures disclosed in the prior art and the present invention can also be alternated, changed, rearranged, decomposed, combined, or deleted.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in a specific situation by those skilled in the art.
The particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (13)
1. A magnetoresistive structure, comprising:
the magnetic tunnel junction structure comprises a first magnetic tunnel junction structure and a second magnetic tunnel junction structure, wherein the first magnetic tunnel junction structure is arranged on the second magnetic tunnel junction structure, or the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are arranged separately;
a bias layer is arranged in the magnetic tunnel junction structure, the bias layer comprises a first bias layer and a second bias layer, the first magnetic tunnel junction structure comprises the first bias layer, and the second magnetic tunnel junction structure comprises the second bias layer;
the bias direction of the first bias layer and the bias direction of the second bias layer are parallel to the plane of the film layer, perpendicular to the axial direction to be measured and anti-parallel to each other;
the magnetic tunnel junction structure is arranged between the bottom electrode and the top electrode.
2. The magnetoresistive structure of claim 1, wherein the first magnetic tunnel junction structure is in series with the second magnetic tunnel junction structure at a measurement circuit when the first magnetic tunnel junction structure is disposed on the second magnetic tunnel junction structure;
the first magnetic tunnel junction structure sequentially comprises a pinning layer structure, a first barrier layer, a first free layer and a first bias layer in the direction far away from the second magnetic tunnel junction structure;
the second magnetic tunnel junction structure sequentially comprises a pinning layer structure, a second barrier layer, a second free layer and a second bias layer in the direction far away from the first magnetic tunnel junction structure;
the pinned layer structure and the first free layer form a tunneling effect of the first magnetic tunnel junction structure and the second free layer form a tunneling effect of the second magnetic tunnel junction structure.
3. A magnetoresistive structure according to claim 2, characterized in that the pinning layer structure comprises a first pinning layer and a second pinning layer, between which a metal layer is arranged;
one side of the first pinning layer is in contact with the metal layer, and the other side of the first pinning layer is in contact with the first barrier layer;
one side of the second pinning layer is in contact with the metal layer, and the other side of the second pinning layer is in contact with the second barrier layer.
4. The magnetoresistive structure of claim 1, wherein when the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are separately arranged, the first magnetic tunnel junction structure and the second magnetic tunnel junction structure are connected in series or in parallel on a measurement circuit;
the first magnetic tunnel junction structure comprises a first pinning layer, a first barrier layer, a first free layer and a first bias layer, and the second magnetic tunnel junction structure comprises a second pinning layer, a second barrier layer, a second free layer and a second bias layer.
5. The magnetoresistive structure of claim 1, wherein the structure of the bias layer is divided into four types, including a bias layer first type structure, a bias layer second type structure, a bias layer third type structure, and a bias layer fourth type structure.
6. The magnetoresistive structure of claim 5, wherein the biasing layer first type structure is a second ferromagnetic layer, a spacer layer, a first ferromagnetic layer, and an antiferromagnetic layer sequentially disposed in a direction away from the magnetic tunnel junction structure.
7. The magnetoresistive structure according to claim 5, wherein the bias layer second type structure is a ferromagnetic layer and an antiferromagnetic layer sequentially arranged in a direction away from the magnetic tunnel junction structure.
8. The magnetoresistive structure according to claim 5, wherein the bias layer third type structure is a ferromagnetic layer and a permanent magnetic layer sequentially arranged in a direction away from the magnetic tunnel junction structure.
9. The magnetoresistive structure of claim 5, wherein the bias layer fourth type structure is a permanent magnetic layer disposed in a direction away from the magnetic tunnel junction structure.
10. The magnetoresistive structure of claim 5, wherein the structure of the first bias layer is any one of the bias layer first type structure, the bias layer second type structure, the bias layer third type structure, and the bias layer fourth type structure;
and the structure of the second bias layer is any one of the first type structure of the bias layer, the second type structure of the bias layer, the third type structure of the bias layer and the fourth type structure of the bias layer.
11. The magnetoresistive structure of claim 1, comprising a seed layer disposed on the bottom electrode, the magnetic tunnel junction structure being disposed on the seed layer.
12. The magnetoresistive structure of claim 1, comprising a protective layer disposed on the magnetic tunnel junction structure, the top electrode being disposed on the protective layer.
13. A single axial measurement magnetic sensor comprising a magnetoresistive structure according to any of claims 1 to 12, several of said magnetoresistive structures being connected in series or in parallel.
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