CN115541960A - Magneto-resistance sensor, chip and preparation method of chip - Google Patents
Magneto-resistance sensor, chip and preparation method of chip Download PDFInfo
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- CN115541960A CN115541960A CN202211153767.9A CN202211153767A CN115541960A CN 115541960 A CN115541960 A CN 115541960A CN 202211153767 A CN202211153767 A CN 202211153767A CN 115541960 A CN115541960 A CN 115541960A
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Abstract
The application provides a magnetism resistance sensor. The magneto-resistance sensor comprises a bridge structure, a current-limiting resistor and a sampling resistor, wherein the bridge structure comprises a plurality of bridge arms and film magneto-resistance units arranged on the bridge arms, the bridge structure is respectively connected with an input end, a ground wire and the ground wire, the current-limiting resistor is connected between the input end and the bridge structure in series, and the sampling resistor is connected between the output end and the bridge structure in series. The application also provides a chip and a preparation method of the chip. The chip prepared by the magneto-resistance sensor, the chip and the chip preparation method can detect current change in the conductor by using the magneto-resistance effect of the thin film magneto-resistance unit so as to output the voltage of the conductor. The voltage of the conductor is detected without using a poly-core and a coil, so that the space and the cost can be saved. The application provides a magnetism resistance sensor can be applied to board and carry voltage accurate detection, and DC/AC ammeter voltage measurement sample, fill application scenarios such as electric pile voltage detection.
Description
Technical Field
The application relates to the field of sensors, in particular to a magneto-resistance sensor, a chip and a chip manufacturing method.
Background
Voltage transformers are commonly used in some power application scenarios to collect voltage signals. Current voltage transformer mostly is elementary through the current-limiting resistor of concatenating in the circuit, converts measured voltage into measuring current, secondary output current signal behind the mutual-inductor, and this current signal turns into voltage signal through sampling resistance. However, the voltage transformer usually includes a current transformer, which has problems of large volume, expensive metal used for the coil, and the like.
Disclosure of Invention
The embodiment of the application provides a magneto-resistance sensor used for detecting voltage.
The utility model provides a magnetism resistance sensor includes bridge structure, current-limiting resistor and sampling resistor, bridge structure include a plurality of bridge arms and set up in the film magnetic resistance unit of bridge arm, bridge structure respectively with input, ground wire with be connected, current-limiting resistor establishes ties the input with between the bridge structure, sampling resistor establishes ties the output with between the bridge structure.
In some embodiments, the output end includes a positive end and a negative end, the bridge structure includes a full-bridge structure, the full-bridge structure includes four bridge arms, the positive end and the negative end are respectively connected to two of the bridge arms, each of the bridge arms is provided with one of the thin film magneto-resistive units, long axes of the thin film magneto-resistive units on adjacent bridge arms are perpendicular to each other, and long axes of the thin film magneto-resistive units on opposite bridge arms are parallel to each other.
In some embodiments, the thin film magnetoresistive cell has an aspect ratio greater than 1 or less than 1.
In some embodiments, the bridge structure comprises a half-bridge structure including two of the thin film magneto-resistive cells connected in series.
In some embodiments, the thin film magnetoresistive cell comprises, in order: a bottom electrode layer, a seed layer, a pinning layer, a pinned layer, an isolation layer, a free layer, a bias layer, a protective layer, and a top electrode layer.
In some embodiments, the thin film magnetoresistive cell comprises, in order: a buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, an isolation layer, a free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer, and a capping layer.
In some embodiments, the free layer comprises a nickel-iron alloy material and the spacer layer is a non-magnetic oxide material.
The embodiment of the application also provides a chip. The chip comprises a signal processing circuit and the magnetoresistive sensor in any of the above embodiments. The magneto-resistance sensor is connected with the signal processing circuit.
In some embodiments, the signal processing circuit includes at least one of a signal conversion circuit, a current output circuit, a voltage measurement circuit, a voltage amplification circuit, and an auto-calibration circuit.
In some embodiments, the signal processing circuit includes a voltage dividing resistor connected in series with the magnetoresistive sensor and configured to measure a voltage.
The embodiment of the application also provides a preparation method of the chip. The preparation method of the chip comprises the following steps: forming a plurality of thin film magneto-resistive cells; the method comprises the steps that MEMS (Micro Electro Mechanical Systems, MEMS) technology is adopted to interconnect a plurality of thin film magnetoresistive units to generate a magnetoresistive sensor, the magnetoresistive sensor comprises a magnetoresistive sensing circuit, the magnetoresistive sensing circuit comprises a bridge structure, a current-limiting resistor and a sampling resistor, the bridge structure comprises a plurality of bridge arms and the thin film magnetoresistive units arranged on the bridge arms, the bridge structure is respectively connected with an input end, a ground wire and an output end, the current-limiting resistor is connected in series between the input end and the bridge structure, and the sampling resistor is connected in series between the output end and the bridge structure; and packaging the magneto-resistance sensor and the signal processing circuit in a package to form the chip.
In certain embodiments, the method of making further comprises: and electroplating a high-permeability magnetism gathering layer on the thin film magnetic resistance unit.
The magnetoresistance sensor, the chip and the chip prepared by the preparation method can detect current change in the conductor by using the magnetoresistance effect of the thin film magnetoresistance unit so as to output the voltage of the conductor. The voltage of the conductor is detected without using a poly-core and a coil, so that the space and the cost can be saved. The magneto-resistance sensor, the chip and the chip prepared by the chip preparation method do not need to use a poly magnetic core and a coil, and therefore the magneto-resistance sensor, the chip and the chip preparation method can be applied to direct current electric energy meters and alternating current electric energy meters to replace current dividers to accurately measure voltage values.
Additional aspects and advantages of embodiments of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a magnetoresistive sensor according to some embodiments of the present application;
FIG. 2 is a schematic diagram of a thin film magnetoresistive cell according to some embodiments of the present application;
FIG. 3 is a schematic diagram of another thin film magnetoresistive cell according to some embodiments of the present application;
FIG. 4 is a schematic diagram of a magnetoresistive sensor according to some embodiments of the present application;
FIG. 5 is a schematic diagram of the structure of a chip according to some embodiments of the present application;
FIG. 6 is a schematic block diagram of a signal processing circuit according to some embodiments of the present application;
FIG. 7 is a schematic diagram of the structure of a chip according to some embodiments of the present application;
FIG. 8 is a schematic flow chart of a method of fabricating a chip according to certain embodiments of the present application;
FIG. 9 is a schematic flow chart of a method of fabricating a chip according to certain embodiments of the present application.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the embodiments of the present application, and are not construed as limiting the embodiments of the present application.
Referring to fig. 1, the present embodiment provides a magnetoresistive sensor 100. The magnetoresistive sensor 100 comprises a bridge structure 10, a current-limiting resistor 20 and a sampling resistor 30, wherein the bridge structure 10 comprises a plurality of bridge arms 11 and thin film magnetoresistive units 12 arranged on the bridge arms 11, the bridge structure 10 is respectively connected with an input end, a ground wire and an output end, the current-limiting resistor 20 is connected between the input end and the bridge structure 10 in series, and the sampling resistor 30 is connected between the output end and the bridge structure 10 in series.
Thin-film magneto-resistive element 12 comprises magneto-resistive material and is capable of detecting a magnetic field signal. When current flows through the conductor, a magnetic field is generated in space, the magnitude of the magnetic field is proportional to the magnitude of the current, and the magnetic field is distributed circumferentially around the conductor. A plurality of thin film magneto-resistive elements 12 form a bridge structure 10, and the bridge structure 10 is connected to an output terminal for passing current through a conductor. When the current in the conductor changes, the magnitude of the generated magnetic field changes correspondingly, and the magnetic resistance of the thin film magneto-resistive unit 12 changes accordingly due to the magneto-resistive effect, so that the voltage output by the bridge structure 10 at the output end changes, and the magneto-resistive sensor 100 can output the voltage of the conductor.
The bridge structure 10 can amplify the voltage signal output from the output terminal to change the noise of the signal, cancel the common mode signal, and improve the temperature drift problem. The sampling resistor 30 is connected in series between the output terminal and the bridge structure 10 for measuring the voltage signal at the output terminal. The current limiting resistor 20 is connected in series between the input terminal and the bridge structure 10, and is used for limiting the current magnitude of the input bridge structure 10, so as to improve the detection sensitivity of the thin film magneto-resistive unit 12, and avoid the thin film magneto-resistive unit 12 from being damaged due to too high current input to the bridge structure 10.
In summary, the magnetoresistive sensor 100 of the embodiment of the present application utilizes the magnetoresistive effect of the thin-film magnetoresistive cells 12 to detect the current change in the conductor to output the voltage of the conductor. Compared with a mode of measuring the conductor voltage by a voltage transformer, the magneto-resistance sensor 100 does not need to use a poly-core and a coil, and space and cost can be saved.
The magnetoresistive sensor 100 is further described below with reference to the drawings.
Referring to fig. 1, in some embodiments, the thin film Magneto-resistive unit 12 may include an Anisotropic Magneto-Resistance AMR (AMR), a Giant Magneto-Resistance GMR (GMR), a tunneling Magneto-Resistance TMR (TMR), or a Giant Magneto-Resistance GMI (GMI), without limitation. Correspondingly, the magnetoresistive sensor 100 may be one of an AMR sensor, a GMR sensor, a TMR sensor, a hall sensor, or a fluxgate sensor, which is not limited herein.
Referring to FIG. 1, in some embodiments, the thin film magnetoresistive cell 12 is a tunneling magnetoresistive TMR. The tunnel magneto-resistance TMR has the advantages of high resistance change rate, high temperature stability, high sensitivity, high linear range and the like.
Referring to FIG. 2, in some embodiments, thin film magnetoresistive cell 12 includes, in order: a bottom electrode layer, a seed layer, a pinning layer, a pinned layer, an isolation layer, a free layer, a bias layer, a protective layer, and a top electrode layer.
In certain embodiments, the pinning layer comprises MnIr, mnPt, mnFe, etc. materials and the pinned layer comprises CoFe, coFeB, etc. materials, without limitation.
In some embodiments, the isolation layer is a non-magnetic oxide material, for example, the isolation layer is magnesium oxide, aluminum oxide, nickel oxide, or the like, without limitation. In some embodiments, the thickness of the isolation layer is in the range of [1.0nm,2.0nm ], and in the case where there is a conductive material on both sides of the isolation layer and there is a potential difference, tunneling occurs through the isolation layer, causing the resistance of the thin film magneto-resistive cell 12 to change.
In some embodiments, the free layer may be a high permeability material such as a nickel-iron alloy, an iron-cobalt alloy, and the like, without limitation. When the magnitude and direction of the current in the conductor changes, the magnitude and direction of the magnetic field generated by the current also changes. The direction of the magnetization of the free layer changes with the change of the magnetic field to be measured, while the direction of the magnetization of the ferromagnetic pinned layer is fixed under the exchange action, and the resistance value of the thin film magnetoresistive unit 12 changes with the change of the included angle between the direction of the magnetization of the free layer and the direction of the magnetization of the ferromagnetic pinned layer, so that the detection of the magnetic field is realized.
Referring to fig. 3, in some embodiments, the thin film magneto-resistive cell 12 has a double pinned layer structure. For example, thin film magnetoresistive cell 12 includes, in order: a buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, an isolation layer, a free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer, and a capping layer.
Referring to fig. 1, in some embodiments, the output end includes a positive terminal and a negative terminal, the bridge structure 10 includes a full-bridge structure, the full-bridge structure includes four bridge arms 11, the positive terminal and the negative terminal are respectively connected to two bridge arms 11, and each bridge arm 11 is provided with one thin film magneto-resistive unit 12.
The aspect ratio of the thin film magnetoresistive unit 12 is greater than 1 or less than 1, the long axes of the thin film magnetoresistive units 12 located on the adjacent bridge arms 11 are perpendicular to each other, and the long axes of the thin film magnetoresistive units 12 located on the opposite bridge arm 11 are parallel to each other. In this way, the directions of the magnetizations of the thin film magnetoresistive units 12 of the adjacent bridge arms 11 are antiparallel, and the differential voltage output from the positive terminal and the negative terminal is the voltage of the conductor.
Referring to FIG. 4, in some embodiments, the bridge structure 10 includes a half-bridge structure including two thin film magnetoresistive cells 12 connected in series. The magnetization directions of the ferromagnetic pinned layers of the two thin-film magnetoresistive elements 12 are antiparallel, and the voltage output from the output terminal is the voltage of the conductor.
The half-bridge configuration reduces the number of thin film magneto resistive elements 12 relative to the full-bridge configuration, which saves space and cost. The full-bridge structure outputs differential voltage, and a more accurate measurement result can be obtained compared with the half-bridge structure.
Referring to fig. 5, the present application further provides a chip 1000. The chip 1000 includes the magnetoresistive sensor 100 and the signal processing circuit 200 in the above-described manner, and the magnetoresistive sensor 100 is connected to the signal processing circuit 200.
The chip 1000 of the embodiment of the present application detects a current change in a conductor using the magnetoresistance effect of the thin film magnetoresistance unit 12 to output a voltage of the conductor. The chip 1000 does not need to use a poly core and a coil, and space and cost can be saved.
Referring to fig. 5 and 6, in some embodiments, the signal processing circuit 200 includes one or more of a signal conversion circuit 201, a current output circuit 202, a voltage measurement circuit 203, a voltage amplification circuit 204, and an auto-calibration circuit 205, so that the chip 1000 has a corresponding signal processing function. The signal conversion circuit 201 is used for conversion between a digital signal and an analog signal. The current output circuit 202 is used to output a current value of the magnetoresistive sensor 100. The voltage measurement circuit 203 is used to output a voltage value of the magnetoresistive sensor 100. The voltage amplification circuit 204 is used to amplify the voltage value of the magnetoresistive sensor 100 to change the noise of the signal.
Referring to fig. 5 and 7, in some embodiments, the signal processing circuit 200 includes a voltage dividing resistor 210, and the voltage dividing resistor 210 is connected in series with the magnetoresistive sensor 100 to measure the voltage of the signal processing circuit 200 according to a voltage dividing principle, so as to output a required voltage signal.
In some embodiments, the voltage divider 210 includes a metal material or an oxide material such as metal electron Au/PT, ruthenium, etc. to stably and accurately output the voltage signal, which is not limited herein.
Referring to fig. 1, 5 and 8, a method for manufacturing a chip 1000 is also provided. The preparation method comprises the following steps:
01: forming a plurality of thin film magneto-resistive elements 12;
02: the method comprises the following steps that MEMS (Micro Electro Mechanical Systems, MEMS) technology is adopted to interconnect a plurality of thin film magneto-resistive units 12 to generate a magneto-resistive sensor 100, the magneto-resistive sensor 100 comprises a magneto-resistive sensing circuit, the magneto-resistive sensing circuit comprises a bridge structure 10, a current-limiting resistor 20 and a sampling resistor 30, the bridge structure 10 comprises a plurality of bridge arms 11 and the thin film magneto-resistive units 12 arranged on the bridge arms 11, the bridge structure 10 is respectively connected with an input end, a ground wire and an output end, the current-limiting resistor 20 is connected between the input end and the bridge structure 10 in series, and the sampling resistor 30 is connected between the output end and the bridge structure 10 in series; and
03: the magnetoresistive sensor 100 and the signal processing circuit 200 are packaged in one package to form a chip 1000.
The magnetoresistive sensor 100 is formed by interconnecting a plurality of thin-film magnetoresistive units 12 through an MEMS process, so that the weight and the volume of the magnetoresistive sensor 100 can be greatly reduced, and the precision and the linearity of the magnetoresistive sensor 100 are improved. The magnetoresistive sensor 100 and the signal processing circuit 200 are packaged in a package, so that the integration level of the chip 1000 is improved, the chip 1000 is compact in structure and smaller in size, the production cost can be reduced, and the large-scale production is convenient to realize.
The magnetoresistive sensor 100 may be one of an AMR sensor, a GMR sensor, a TMR sensor, a hall sensor, or a fluxgate sensor, which is not limited herein.
The chip 1000 manufactured by the manufacturing method of the chip 1000 according to the embodiment of the present application can detect a current change in a conductor by using the magnetoresistance effect of the thin film magnetoresistance unit 12 to output a voltage of the conductor. The chip 1000 does not need to use a poly core and a coil, so that space and cost can be saved, and the prepared chip 1000 is more compact.
In some embodiments, the thin film magneto-resistive element 12 is formed by using a multi-layer multi-target magnetron sputtering apparatus to prepare the thin film magneto-resistive element 12 with a relatively small size, so that the prepared thin film magneto-resistive element 12 has the advantages of small volume, good stability, low power consumption and the like.
Referring to fig. 1, 2 and 8, in some embodiments, the thin film magnetoresistive cell 12 prepared in method 01 is a tunneling magnetoresistive TMR, which includes sequentially arranged: a substrate, an insulating layer, a seed layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a nonmagnetic interlayer, a free layer, and a capping layer.
Referring to fig. 1 and 8, in some embodiments, in the magnetoresistive sensor 100 generated by interconnecting a plurality of thin film magnetoresistive units 12 by using an MEMS process in the method 02, an output end includes a positive terminal and a negative terminal, the bridge structure 10 includes a full-bridge structure, the full-bridge structure includes four bridge arms 11, the positive terminal and the negative terminal are respectively connected to two bridge arms 11, and each bridge arm 11 is provided with one thin film magnetoresistive unit 12. The aspect ratio of the thin film magneto-resistive units 12 is greater than 1 or less than 1, the long axes of the thin film magneto-resistive units 12 on the adjacent bridge arms 11 are perpendicular to each other, and the long axes of the thin film magneto-resistive units 12 on the opposite bridge arms 11 are parallel to each other.
Referring to fig. 1, 4 and 8, in some embodiments, in a magnetoresistive sensor 100 formed by interconnecting a plurality of thin-film magnetoresistive cells 12 in a MEMS process in a method 02, a bridge structure 10 includes a half-bridge structure including two thin-film magnetoresistive cells 12 connected in series.
Referring to fig. 9, in some embodiments, the preparation method further comprises:
04: a high permeability poly-magnetic layer is plated on the thin film magneto-resistive element 12.
The poly-magnetic layer has a magnetic conductive function for changing the sensitivity direction of the thin film magneto-resistive element 12, so that the magneto-resistive sensor 100 can output a voltage signal.
Referring to fig. 8, in some embodiments, the signal processing Circuit 200 is an ASIC (Application Specific Integrated Circuit) designed by using an Integrated Circuit design software, and is configured to perform tape-out by using an Integrated Circuit process. The flow sheet formed ASIC is packaged with the magnetoresistive sensor 100 in a package to form a chip 1000.
Referring to fig. 5, fig. 6 and fig. 8, in some embodiments, the signal processing circuit 200 includes one or more of a signal conversion circuit 201, a current output circuit 202, a voltage measurement circuit 203, a voltage amplification circuit 204 and an auto-calibration circuit 205, so that the chip 1000 has corresponding signal processing functions.
Referring to fig. 5, 7 and 8, in some embodiments, the signal processing circuit 200 includes a voltage dividing resistor 210, and the voltage dividing resistor 210 is connected in series with the magnetoresistive sensor 100 and is used for measuring a voltage.
In summary, the magnetoresistive sensor 100, the chip 1000 and the chip 1000 manufactured by the method of manufacturing the chip 1000 provided by the present application can detect the current change in the conductor by using the magnetoresistive effect of the thin film magnetoresistive unit 12, so as to output the voltage of the conductor. The voltage of the conductor is detected without using a poly-core and a coil, so that the space and the cost can be saved. The magnetoresistive sensor 100, the chip 1000 and the chip 1000 prepared by the preparation method of the chip 1000 can accurately detect the current change output voltage, so that the chip can be applied to application scenes such as on-board voltage accurate detection, direct current/alternating current ammeter voltage metering sampling, charging pile voltage detection and the like. For example, when the magnetoresistive sensor 100 is applied to a dc/ac power meter in a strong electric environment, since the voltage of the detection conductor does not need to use a poly core and a coil, it is not interfered by the strong electric environment, and thus it is possible to accurately measure the voltage value instead of a shunt.
In the description herein, references to the description of the terms "certain embodiments," "one example," "exemplary," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
Although embodiments of the present application have been shown and described above, it is to be understood that the above embodiments are exemplary and not to be construed as limiting the present application, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (19)
1. The magneto-resistance sensor is characterized by comprising a bridge structure, a current-limiting resistor and a sampling resistor, wherein the bridge structure comprises a plurality of bridge arms and thin film magneto-resistance units arranged on the bridge arms, the bridge structure is respectively connected with an input end, a ground wire and a ground wire, the current-limiting resistor is connected in series between the input end and the bridge structure, and the sampling resistor is connected in series between the output end and the bridge structure.
2. The magnetoresistive sensor according to claim 1, wherein the output end comprises a positive terminal and a negative terminal, the bridge structure comprises a full bridge structure, the full bridge structure comprises four bridge arms, the positive terminal and the negative terminal are respectively connected to two bridge arms, each bridge arm is provided with one thin film magnetoresistive unit, long axes of the thin film magnetoresistive units on adjacent bridge arms are perpendicular to each other, and long axes of the thin film magnetoresistive units on opposite bridge arms are parallel to each other.
3. The magnetoresistive sensor of claim 2, wherein the aspect ratio of the thin-film magnetoresistive cell is greater than 1 or less than 1.
4. The magnetoresistive sensor of claim 1, wherein the bridge structure comprises a half-bridge structure including two of the thin-film magnetoresistive cells connected in series.
5. The magnetoresistive sensor according to any of claims 1 to 4, wherein the thin-film magnetoresistive cell comprises, in order:
the device comprises a bottom electrode layer, a seed layer, a pinning layer, a pinned layer, an isolation layer, a free layer, a bias layer, a protective layer and a top electrode layer; or
A buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, an isolation layer, a free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer, and a capping layer.
6. The magnetoresistive sensor of claim 5, wherein the free layer comprises a nickel-iron alloy material and the spacer layer is a non-magnetic oxide material.
7. A chip, comprising:
a signal processing circuit; and
a magnetoresistive sensor according to any of claims 1 to 4, connected to the signal processing circuit.
8. The chip of claim 7, wherein the signal processing circuit comprises at least one of a signal conversion circuit, a current output circuit, a voltage measurement circuit, a voltage amplification circuit, and an auto-calibration circuit.
9. The chip according to claim 7, wherein the signal processing circuit comprises a voltage dividing resistor connected in series with the magnetoresistive sensor and configured to measure a voltage.
10. A method for manufacturing a chip, comprising:
forming a plurality of thin film magneto-resistive elements;
the method comprises the steps that MEMS (Micro Electro Mechanical Systems, MEMS) technology is adopted to interconnect a plurality of thin film magnetoresistive units to generate a magnetoresistive sensor, the magnetoresistive sensor comprises a magnetoresistive sensing circuit, the magnetoresistive sensing circuit comprises a bridge structure, a current-limiting resistor and a sampling resistor, the bridge structure comprises a plurality of bridge arms and the thin film magnetoresistive units arranged on the bridge arms, the bridge structure is respectively connected with an input end, a ground wire and an output end, the current-limiting resistor is connected in series between the input end and the bridge structure, and the sampling resistor is connected in series between the output end and the bridge structure; and
and packaging the magneto-resistance sensor and the signal processing circuit in a package to form the chip.
11. The method of manufacturing according to claim 10, further comprising:
and electroplating a high-permeability magnetism gathering layer on the thin film magnetic resistance unit.
12. The manufacturing method according to claim 10, wherein the output end includes a positive end and a negative end, the bridge structure includes a full bridge structure, the full bridge structure includes four bridge arms, the positive end and the negative end are respectively connected to two bridge arms, each bridge arm is provided with one thin film magneto-resistive unit, long axes of the thin film magneto-resistive units on adjacent bridge arms are perpendicular to each other, and long axes of the thin film magneto-resistive units on opposite bridge arms are parallel to each other.
13. The method of claim 12, wherein the aspect ratio of the thin film magneto-resistive element is not equal to 1.
14. The method of claim 10, wherein the bridge structure comprises a half-bridge structure including two thin film magneto-resistive cells connected in series.
15. The method of any one of claims 11-14, wherein the thin film magneto-resistive element comprises, in order:
the device comprises a bottom electrode layer, a seed layer, a pinning layer, a pinned layer, an isolation layer, a free layer, a bias layer, a protective layer and a top electrode layer; or
A buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, a spacer layer, a free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer, and a capping layer.
16. The method of claim 15, wherein the free layer is a nickel-iron alloy material and the spacer layer is a non-magnetic oxide material.
17. The method of claim 10, wherein the signal processing circuit includes at least one of a signal conversion circuit, a current output circuit, a voltage measurement circuit, a voltage amplification circuit, and an auto-calibration circuit.
18. The manufacturing method according to claim 10, wherein the signal processing circuit includes a voltage dividing resistor connected in series with the magnetoresistive sensor and used for measuring voltage.
19. The method of claim 10, wherein the magnetoresistive sensor comprises one of a hall sensor, a TMR (TMR) sensor, a GMR (GMR) sensor, an AMR (Anisotropic magnetic Resistance, AMR) sensor, or a fluxgate sensor.
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| CN202211153767.9A CN115541960A (en) | 2022-09-21 | 2022-09-21 | Magneto-resistance sensor, chip and preparation method of chip |
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| CN202211153767.9A CN115541960A (en) | 2022-09-21 | 2022-09-21 | Magneto-resistance sensor, chip and preparation method of chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106801A (en) * | 2023-04-14 | 2023-05-12 | 珠海多创科技有限公司 | Magneto-resistive sensor, magnetic sensing device and preparation method thereof |
| CN116953336A (en) * | 2023-09-21 | 2023-10-27 | 北京智芯微电子科技有限公司 | Current sensor chip, manufacturing method and circuit |
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2022
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106801A (en) * | 2023-04-14 | 2023-05-12 | 珠海多创科技有限公司 | Magneto-resistive sensor, magnetic sensing device and preparation method thereof |
| CN116953336A (en) * | 2023-09-21 | 2023-10-27 | 北京智芯微电子科技有限公司 | Current sensor chip, manufacturing method and circuit |
| CN116953336B (en) * | 2023-09-21 | 2024-01-19 | 北京智芯微电子科技有限公司 | Current sensor chip, manufacturing method and circuit |
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